Acoustic Resonator and Method of Forming the Same

Various embodiments may relate to an acoustic resonator. The acoustic resonator may include a piezoelectric layer. The acoustic resonator may also include a first electrode in contact with a first surface of the piezoelectric layer. The acoustic resonator may further include a plurality of dielectric structures in contact with the first surface of the piezoelectric layer. The acoustic resonator may additionally include a second electrode in contact with a second surface of the piezoelectric layer opposite the first surface. The first electrode may include a plurality of electrode structures. A dielectric structure of the plurality of dielectric structures may be in contact with a pair of neighboring electrode structures of the plurality of electrode structures.

1D/2D HYBRID PIEZOELECTRIC NANOGENERATOR AND METHOD FOR MAKING SAME

Способ создания ориентированных структур на основе сегнетоэлектрического порошка

Изобретение относится к способам создания ориентированных структур из порошковых сегнетоэлектриков, которые могут быть использованы в различных устройствах регистрации и управления электромагнитным излучением. Сущность: на первый электрод насыпают сегнетоэлектрический порошок, второй электрод располагают параллельно над первым, под которым установлено устройство изменения температуры, рабочая плоскость которого больше или равна площади изготавливаемой структуры. С нижней стороны устройства изменения температуры установлен источник ультразвукового излучения, направленный вверх. Оба электрода и источник ультразвукового излучения подключены к источнику напряжения. Затем питание одновременно подается на устройство изменения температуры, высоковольтные электроды и источник ультразвукового излучения. Происходит ориентирование порошка за счет разворота частиц вдоль линии электрического поля. После ориентации частиц порошка по электрическому полю и стабилизации их положения выключают питание электродов ...

PIEZOELECTRIC-BODY FILM JOINT SUBSTRATE AND MANUFACTURING METHOD THEREOF

A piezoelectric-body film joint substrate (100) includes a substrate (33), a substrate electrode (34) provided on the substrate (33), a first piezoelectric-body film (27) stuck on the substrate electrode (34) and including a first piezoelectric film (25) and a first upper electrode film (26) formed on the first piezoelectric film (25), and a second piezoelectric-body film (17) stuck on the first upper electrode film (26) and including a second piezoelectric film (15) different from the first piezoelectric film (25) and a second upper electrode film (16) formed on the second piezoelectric film (15).

METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE PROVIDED WITH PIEZOELECTRIC SINGLE CRYSTAL FILM

Provided is a method of manufacturing a composite substrate equipped with a piezoelectric single-crystal film having good film-thickness uniformity and not causing deterioration in properties even if ion implantation is performed. The method of manufacturing a composite substrate 10 equipped with a piezoelectric single-crystal film 11 according to the present invention includes the steps of: (a) subjecting a piezoelectric single-crystal substrate 1 made of lithium tantalate or lithium niobate to ion implantation treatment to form an ion implantation layer 11, (c) bonding the surface of the piezoelectric single-crystal substrate 1 having the ion implantation layer 11 thereon to a temporary bonding substrate 2, (d) separating the piezoelectric single-crystal substrate 1 into the ion implantation layer 11 and the remaining portion of the substrate to form a piezoelectric single-crystal film 11 on the temporary bonding substrate 2, (f) bonding a supporting substrate 3 to the surface of the ...

Method of manufacturing power generation element, power generation element, and power generation apparatus

A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.

Auto-focusing device and method of fabricating the same

In accordance with some embodiments, a method of forming an auto-focusing device is provided. The method includes forming a cantilever beam member. The cantilever beam member has a ring shape. The method further includes forming a piezoelectric member over the cantilever beam member. The method also includes forming a membrane over the cantilever beam member. The membrane has a first region and a second region. The first region has a planar surface, and the second region is located between the first region and an inner edge of the cantilever beam member and has a plurality of corrugation structures. In addition, the method includes applying a liquid optical medium over the membrane and sealing the liquid optical medium with a protection layer.

TRANSPARENT CONDUCTIVE PIEZOELECTRIC FILM AND TOUCH PANEL

To suppress change in a surface resistance value under a high-temperature or high-humidity environment in a transparent conductive piezoelectric film including a transparent piezoelectric film made of a fluororesin. A transparent conductive piezoelectric film includes a transparent piezoelectric film made of a fluororesin, a transparent coating layer, and a transparent electrode stacked in this order. The total thickness of the coating layer is 0.6 to 4.5 μm. When the transparent conductive piezoelectric film is left to stand in a specific high-temperature environment, the ratio of a resistance value after being left in the environment to a ratio of a resistance value before being left in the environment is 1.30 or less.

Piezo Actuator in Multi-Layered Construction

A multilayer piezo actuator is specified, in which piezoelectric layers and electrode layers are arranged to form a stack. Electrical contact is made with the electrode layers via two external electrodes which consist of wires which are woven with one another. The external electrodes are in this case connected over their entire area to the side surfaces of the stack. A method is also specified for fitting an external electrode.

Actuator and method for driving actuator

The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed. The present invention provides a method for driving an actuator, comprising the following steps (a) and (b): a step (a) of preparing the actuator, wherein the actuator comprises a first electrode, a piezoelectric layer composed of (Bi,Na,Ba)TiO 3 , and a second electrode, the piezoelectric layer is interposed between the first electrode and the second electrode, +X direction, +Y direction, and +Z direction denote [100] direction, [01-1] direction, and [011] direction, respectively, and the piezoelectric layer is preferentially oriented along the +Z direction; and a step (b) of applying a potential difference between the first electrode and the second electrode to drive the actuator.

Piezoelectric element, liquid ejecting head and liquid ejecting apparatus

A piezoelectric element comprises a piezoelectric member made of a complex oxide and an electrode which contains platinum. The complex oxide contains potassium sodium niobate and bismuth ferrate. The molar ratio of the bismuth ferrate to the sum of the potassium sodium niobate and the bismuth ferrate is in the range of 3% to 10%. And the molar ratio of the sum of potassium and sodium to niobium is in the range of 103% to 115%.

Piezoelectric generator, sensor node, and method of manufacturing piezoelectric generator

A piezoelectric generator includes: a base body; and at least one piezoelectric transducer disposed on the base body, and including a first electrode, a piezoelectric body, and a second electrode, wherein the piezoelectric transducer includes a support section fixed to the base body, and a vibrating section disposed apart from the base body, having one end connected to the support section and the other end set as a free end, and vibrating due to a vibration applied externally, and a distance between the other end of the vibrating section and the base body is larger than a distance between the one end of the vibrating section and the base body.

Method for producing alkali metal niobate particles, and alkali metal niobate particles

Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): Na x K (1-x) NbO 3 (1), the method including four specific steps, wherein a high-concentration alkaline solution containing Na + ion and K + ion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.

Composite substrate and method for manufacturing the same

The composite substrate is a substrate used to manufacture an acoustic wave device, and includes a support substrate, a piezoelectric substrate, and a adhesive layer with which the support substrate and the piezoelectric substrate are bonded to each other. In the composite substrate, assuming that a surface of the piezoelectric substrate that is bonded to the support substrate is defined as a first surface and a surface at the side opposite to the first surface is defined as a second surface, the piezoelectric substrate is formed such that the first surface is inside the second surface when the first surface is projected onto the second surface in a direction perpendicular to the second surface. In other words, the composite substrate has an outer peripheral surface that is formed such that the circumference thereof increases toward the top surface of the piezoelectric substrate.

Piezoelectric sensor and a method of fabricating a piezoelectric sensor

A piezoelectric sensor comprising a piezoelectric film formed on a surface of an object to be monitored; a plurality of electrodes formed on a surface of the piezoelectric film; and wherein electrical polarization of the piezoelectric film is about coplanar with the surface of the piezoelectric film. A method of forming a piezoelectric sensor. The method comprises forming a piezoelectric film on a surface of an object to be monitored; forming electrodes on a surface of the piezoelectric film; and orientating electrical polarization in the piezoelectric film to be about coplanar with the surface of the piezoelectric film.

Wide bandwidth slanted-finger contour-mode piezoelectric devices

Contour-mode piezoelectric devices and methods of forming contour mode piezoelectric devices. The contour mode piezoelectric device includes a piezoelectric film having first and second surfaces and suspended so that it is spaced away from a substrate. The contour mode piezoelectric device also includes first and second patterned electrodes respectively disposed on the first and second surfaces of the piezoelectric film, at least one of the first and second patterned electrodes having variable width along a length thereof.

Sputtered Piezoelectric Material

Piezoelectric actuators having a composition of Pb 1.00+x (Zr 0.52 Ti 0.48 ) 1.00−y O 3 Nb y , where x>−0.02 and y>0 are described. The piezoelectric material can have a Perovskite, which can enable good bending action when a bias is applied across the actuator.

Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

A piezoelectric element comprises a piezoelectric layer consisting of a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one selected from the group consisting of sodium, potassium, calcium, strontium and barium, and a second dopant element that is cerium.

Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

A piezoelectric element, comprises a piezoelectric layer consisting of a complex oxide represented as a mixed crystal including bismuth ferrate and barium titanate and an electrode provided to the piezoelectric layer. The piezoelectric layer contains 1 to 15 mol % of lithium relative to the complex oxide.

Apparatus for generating electrical energy and method for manufacturing the same

An apparatus for generating electrical energy may include; a first electrode, a second electrode spaced apart from the first electrode, a nanowire which includes a piezoelectric material and is disposed on the first electrode, an active layer disposed on the first electrode, a conductive layer disposed on the active layer, and an insulating film disposed between the conductive layer and the nanowire, wherein the nanowire and the active layer are electrically connected to each other. A method for manufacturing an apparatus for generating electrical energy may include; disposing a nanowire including a piezoelectric material on a first electrode, disposing an active layer, which is electrically connected to the nanowire, on the first electrode, disposing an insulating film on the nanowire, disposing a conductive layer on the active layer, and disposing a second electrode in proximity to the nanowire and substantially opposite to the first electrode.

GaN FILM STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

A method of fabricating a gallium nitride (GaN) thin layer structure includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and define at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

A piezoelectric element comprises a first electrode including platinum, a piezoelectric layer disposed above the first electrode, made of a complex oxide having a perovskite structure containing at least bismuth, and a second electrode disposed above the piezoelectric layer. An oxide containing bismuth and platinum is disposed at the interface of the piezoelectric layer with the first electrode.

Lead-free piezoelectric ceramic films and a method for making thereof

This invention relates to a method of making lead-free piezoelectric ceramic films. Specifically, the invention is directed to a method for fabricating lead-free piezoelectric free standing films having enhanced piezoelectric properties. The films may be used for a number of applications including incorporation in microelectronic devices such as energy harvesting devices and sensor technologies.

Method of manufacturing a vibratory actuator for a touch panel with haptic feedback

The disclosure relates to a method of manufacturing vibratory elements, comprising forming on a substrate a multilayer structure by an integrated circuit manufacturing method, the multilayer structure comprising an element susceptible of vibrating when it is subjected to an electrical signal, and electrodes for transmitting an electrical signal to the vibratory element, the vibratory element comprising a mechanical coupling face that is able to transmit to control element vibrations perceptible by a user.

Light position controlling apparatus and method of manufacturing the same

A light position controlling apparatus and a method of manufacturing the same. The light position controlling apparatus includes a substrate; first and second electrodes that are arranged on the substrate and configured to generate an electric field; and a piezoelectric nano wire configured to operate as optical waveguide. The piezoelectric nano wire includes a first portion disposed on the substrate, and a second portion that extends from the first portion and bends according to the electric field generated by the first and second electrodes to change a travel direction of light transmitted by the piezoelectric nano wire.

Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element

Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

Device and method for manufacturing the same

It is an object of this invention to prevent a resistor material and an electrode material from diffusing and suppress variation in electric resistance. In a device including a plurality of metal layers of different compositions on a substrate and a second structure made of a material, such as glass paste, requiring a firing process at the time of formation, an intermediate layer is formed between a first metal layer and a second metal layer forming the first structure. The intermediate layer is of an intermetallic compound including one or more metallic elements in the first metal layer and one or more metallic elements in the second metal layer. The melting point of the intermetallic compound is higher than a firing temperature when the second structure is formed, and the intermetallic compound is produced at a temperature higher than the firing temperature for forming the second structure.

Structured Layers Composed of Crosslinked or Crosslinkable Metal-Organic Compounds, Shaped Bodies Containing Them as well as Processes for Producing Them

The invention relates to a process for producing a structured shaped body or a layer of this type from a precursor of a metal oxide or mixed oxide selected from among magnesium, strontium, barium, aluminum, gallium, indium, silicon, tin, lead and the transition metals.

Piezoelectric element and piezoelectric device

A piezoelectric element includes a substrate, and at least a lower electrode layer, a piezoelectric film represented by a general formula of (Na x K y Li z )NbO 3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode layer successively formed on the substrate. The piezoelectric film has a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or has a state that at least two of the crystal structures coexist. The piezoelectric film is preferentially oriented to certain specific axes that are not more than two axes of crystal axes in the crystal structures. At least one of domain crystal component of a c-axis orientation domain crystal component and an a-axis orientation domain crystal component exists as the components of the crystal axes oriented.

Ferroelectric film, electronic component and method for manufacturing ferroelectric film

A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate.

Perovskite oxide film and ferroelectric film using the same, ferroelectric device, and method for manufacturing perovskite oxide film

A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 μm and includes a perovskite oxide represented by a general formula (P) given below: (K 1−w−x , A w , B x )(Nb 1−y−z , C y , D z )O 3 - - - (P), where: 0<w<1.0, 0≦x≦0.2, 0≦y<1.0, 0≦z≦0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.

Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head

A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.

Piezoelectric thin film element and method of manufacturing the same, droplet discharge head and inkjet recording device using the piezoelectric thin film element

A piezoelectric thin film element includes a vibration plate, a lower electrode provided on the vibration plate and made of a conductive oxide, a piezoelectric thin film provided on the lower electrode and made of a polycrystalline substance, and an upper electrode provided on the piezoelectric thin film, wherein the lower electrode includes a titanium oxide film formed on the vibration plate, a platinum film formed on the titanium oxide film, and a conductive oxide film formed on the platinum film and, the platinum film and the conductive oxide film being a solid film with no holes.

Pzt-based ferroelectric thin film and method of manufacturing the same

A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer.

Method For Manufacturing A Thin Film On A Substrate

A method for maufacturing a thin film on a substrate may include: coupling the substrate to a pretensioning facility such that the substrate with the pretensioning facility is isotropically extended in the surface, wherein the substrate is held elastically under pressure with a predetermined pretension; depositing a thin film material on the substrate with a deposition method, in which by applying heat to the thin film material, this is deposited on the substrate so that a thin film with the thin film material is embodied on the substrate; decoupling the substrate from the pretensioning facility; cooling the thin film accompanied by a shrinkage, wherein the predetermined pretension is at least high enough that the appearance of a tensile stress in the thin film is prevented in the case of shrinkage.

Method of manufacturing pvdf-based polymer and method of manufacturing multilayered polymer actuator using the same

A method of manufacturing a polyvinylidene fluoride (PVDF)-based polymer film includes: applying a solution formed by dissolving a PVDF-based polymer in a solvent, on a first substrate; forming a PVDF-based polymer film by evaporating the solvent; bonding a support film on the PVDF-based polymer film; weakening an adhesive force between the PVDF-based polymer film and the first substrate; and separating the first substrate from the PVDF-based polymer film.

Structure for bonding metal plate and piezoelectric body and bonding method

A bonding structure that provides excellent conductivity and bonding between a piezoelectric body and a metal plate includes a metal plate and an electrode of a piezoelectric body bonded to one another with an electrically conductive adhesive so as to provide electrical conductivity, the electrically conductive adhesive includes carbon black with a nano-level average particle size, and has a paste form included in a solventless or solvent-based resin so that the carbon black forms an aggregate with an average particle size of about 1 μm to about 50 μm. The electrically conductive adhesive is applied between the metal plate and the electrode of the piezoelectric body, and the metal plate and the piezoelectric body are subjected to heating and pressurization so that the carbon black aggregate is deformed, thereby hardening the electrically conductive adhesive.

Acoustic actuator and acoustic actuator system

An acoustic actuator according to an exemplary embodiment of the present invention includes: an actuator element generating a corresponding sound in response to an applied electrical signal; a supporting member supporting the actuator element so as to form a movement axis of the actuator element; and an edge member connected with the actuator element. The actuator element includes: a piezoelectric unit having at least one piezoelectric member of which a length is larger than a width by at least √{square root over (2)} times; and a membrane unit including at least one membrane member generating the corresponding sound in response to the applied electrical signal, by being fixedly adhered to the piezoelectric unit so as to extend in a length direction of the at least one piezoelectric member and by forming wave movement in the extending direction in response to a current applied to the piezoelectric unit.

Piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a Na x La 1-x+y Ni 1-y O 3-x layer having only an (001) orientation and a (1-α) (Bi, Na, Ba) TiO 3 -αBiQO 3 layer having only an (001) orientation. The (1-α) (Bi, Na, Ba) TiO 3 -αBiQO 3 layer is formed on the Na x La 1-x+y Ni 1-y O 3-x layer. The character of Q represents Fe, Co, Zn 0.5 Ti 0.5 , or Mg 0.5 Ti 0.5 The character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of α represents a value of not less than 0.20 and not more than 0.50.

Shear mode physical deformation of piezoelectric mechanism

A piezoelectric mechanism includes first and second electrodes and a thin film sheet of piezoelectric material. The second electrode is interdigitated in relation to the first electrode. The first and the second electrodes are embedded within the thin film sheet. The thin film sheet is polarized in a direction at least substantially perpendicular to a surface of the thin film sheet. The thin film sheet is to physically deform in a shear mode due to polarization of the thin film sheet at least substantially perpendicular to the surface of the thin film sheet, responsive to an electric field induced within the thin film sheet at least substantially parallel to the sheet via application of a voltage across the first and the second electrodes.

Electronic device and method of manufacturing the same

An electronic device includes a substrate, an electrode formed on the substrate, and a movable portion provided above the electrode, the movable portion being elastically deformable, in which the movable potion includes a shape memory alloy film.

Micromachined piezoelectric x-axis gyroscope

This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for making and using gyroscopes. Such gyroscopes may include a sense frame, a proof mass disposed outside the sense frame, a pair of anchors and a plurality of drive beams. The plurality of drive beams may be disposed on opposing sides of the sense frame and between the pair of anchors. The drive beams may connect the sense frame to the proof mass. The drive beams may be configured to cause torsional oscillations of the proof mass substantially in a first plane of the drive beams. The sense frame may be substantially decoupled from the drive motions of the proof mass. Such devices may be included in a mobile device, such as a mobile display device.

Method for producing a thin film made of lead zirconate titanate

The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.3, and the deposition rate of lead is selected to be sufficiently low, depending on the substrate temperature and the total deposition rate of lead, zirconium, and titanium, for an X-ray diffractometer graph of the 111-oriented lead zirconate titanate to have a significant peak value ( 19 ) in a diffraction angle range from 33 to 35.5°; and completing the thin film.

Thin film piezoelectric device

A thin film piezoelectric device according to the present invention includes a potassium sodium niobate-based piezoelectric thin film having an average crystal grain diameter of 60 nm or more and 90 nm or less, and a pair of electrode films configured to hold the piezoelectric thin film therebetween.

Mems-based cantilever energy harvester

The claimed invention is directed to integrated energy-harvesting piezoelectric cantilevers. The cantilevers are fabricated using sol-gel processing using a sacrificial poly-Si seeding layer. Improvements in film microstructure and electrical properties are realized by introducing a poly-Si seeding layer and by optimizing the poling process.

Mn AND Nb CO-DOPED PZT-BASED PIEZOELECTRIC FILM

A Mn and Nb co-doped PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the film satisfies (0.98 to 1.12):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Micro-optical electromechanical device and method for manufacturing it

A micro-optical electromechanical device includes a body, a mirror element, and a spring structure configured to flexibly support the mirror element to the body. The spring structure includes at least one piezoelectric transducer adapted to induce in the spring structure a displacement that moves the mirror element.

Acoustic wave device, filter, and multiplexer

An acoustic wave device includes: a piezoelectric substrate bonded on a support substrate, a surface including protruding portions and/or recessed portions being interposed between the piezoelectric substrate and the support substrate; a first acoustic wave resonator that includes first electrode fingers with a first average pitch and is disposed on the piezoelectric substrate in a first region where an average interval between the protruding portions and/or the recessed portions in a direction in which the first electrode fingers are arranged is a first interval; and a second acoustic wave resonator that includes second electrode fingers with a second average pitch different from the first average pitch, and is disposed on the piezoelectric substrate in a second region where an average interval between the protruding portions and/or the recessed portions in a direction in which the second electrode fingers are arranged is a second interval different from the first interval.

Piezoelectric body film, piezoelectric element, and method for manufacturing piezoelectric element

To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element. A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A 1+δ [(Zr y Ti 1-y ) 1-x Nb x ]O 2 , Formula (2) 0.35≤r/q<0.58, in this case, in Formula (1), A represents an A site element containing Pb, x and y each independently represent a numerical value of more than 0 and less than 1, standard values of δ and z each are 0 and 3, but these values may deviate from the standard values as long as the perovskite-type oxide has a perovskite structure, and, in Formula (2), a unit of q is atm %.

Techniques for joining dissimilar materials in microelectronics

Techniques for joining dissimilar materials in microelectronics are provided. Example techniques direct-bond dissimilar materials at an ambient room temperature, using a thin oxide, carbide, nitride, carbonitride, or oxynitride intermediary with a thickness between 100-1000 nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and/or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over 200%. A relatively low temperature anneal applied slowly at a rate of 1° C. temperature increase per minute, or less, further strengthens and consolidates the direct bonds. The example techniques can direct-bond lithium tantalate LiTaO 3 to various conventional substrates in a process for making various novel optical and acoustic devices.

Method for producing alkali metal niobate particles, and alkali metal niobate particles

Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): Na x K (1-x) NbO 3 (1), the method including four specific steps, wherein a high-concentration alkaline solution containing Na + ion and K + ion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.

Elastic wave device and method for producing the same

An elastic wave device includes a lithium niobate film, a supporting substrate, a high-acoustic-velocity film located on the supporting substrate and configured so that the acoustic velocity of a propagating bulk wave is higher than the acoustic velocity of an elastic wave that propagates on the lithium niobate film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and configured so that the acoustic velocity of the propagating bulk wave is lower than the acoustic velocity of the bulk wave that propagates in the lithium niobate film, the lithium niobate film being stacked on the low-acoustic-velocity film, and an IDT electrode located on either side of the lithium niobate film. When the lithium niobate film has Euler angles of (0°±5°, θ, 0°), θ is in the range of about 0° to about 8° and about 57° to about 180°.

Dielectric element and piezoelectric element

A dielectric element includes a substrate, a first electrode layer on this substrate, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer. The first electrode layer contains lanthanum nickelate. The dielectric layer contains lead magnesate niobate-titanate represented by (1−x)Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 , where x satisfies 0.28≦x≦0.33. The (100) plane of lead magnesate niobate-titanate is preferentially oriented along the interface between the first electrode layer and the dielectric layer.

Piezoelectric ptzt film, and process for producing liquid composition for forming said piezoelectric film

A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, β-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.

Composite Substrate and Method of Producing the Same

In the composite substrate, the piezoelectric substrate and the support substrate are bonded by direct bonding using an ion beam. One surface of the piezoelectric substrate is a negatively-polarized surface and another surface of the piezoelectric substrate is a positively-polarized surface. An etching rate at which the negatively-polarized surface is etched with a strong acid may be higher than an etching rate at which the positively-polarized surface is etched with the strong acid. The positively-polarized surface of the piezoelectric substrate is directly bonded to the support substrate. The negatively-polarized surface of the piezoelectric substrate may be etched with the strong acid.

Electromechanical transformation device and method for manufacturing the same

An electromechanical transformation device comprises an alkaline niobate piezoelectric ceramic composition and a rigid body adhered onto the major surface of the piezoelectric ceramic composition. The piezoelectric ceramic composition is made of crystal structures such as orthorhombic crystals formed at the side where the temperature is lower than the orthorhombic-to-tetragonal phase transition temperature, tetragonal crystals formed at the side where the temperature is higher than the orthorhombic-to-tetragonal phase transition temperature as well as at the side where the temperature is lower than the tetragonal-to-cubic phase transition temperature, and the cubic crystals formed at the side where the temperature is higher than the tetragonal-to-cubic phase transition temperature. Young's modulus of the rigid body is 60 GPa or more and the volume percent of the piezoelectric ceramic composition existing within a range where the distance from the adhesion point of the piezoelectric ceramic composition and the rigid body is 40% or more.

Piezoelectric mems devices and methods of forming thereof

In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.

Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic apparatus, electronic apparatus, and manufacturing method of mounting structure

A mounting structure includes a first substrate which has a first surface on which a functional element is provided, a second substrate that has a second surface facing the first surface, a wiring portion that is provided at a position which is different from a position of the functional element on the first surface, has a third surface facing the second surface, and is electrically connected to the functional element, and a conduction portion that is provided on the second surface, protrudes toward the first surface, and is connected to the third surface so as to be electrically connected to the functional element, in which an area of the third surface is larger than an area of a first end section of the wiring portion on the first substrate side in a plan view which is viewed from a thickness direction of the first substrate and the second substrate.

Heterostructure and method of fabrication

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

Method of manufacturing piezoelectric thin film and piezoelectric sensor manufactured using piezoelectric thin film

Disclosed are a method of manufacturing a piezoelectric thin film and a piezoelectric sensor manufactured using the piezoelectric thin film. A piezoelectric sensor according to an embodiment of the present disclosure includes a substrate; a lower electrode formed on the substrate; a two-dimensional perovskite nanosheet seed layer formed on the lower electrode; a ceramic piezoelectric thin film formed on the two-dimensional perovskite nanosheet seed layer; and an upper electrode formed on the ceramic piezoelectric thin film, wherein each of the two-dimensional perovskite nanosheet seed layer and the ceramic piezoelectric thin film has a crystal structure.

Piezoelectric device and method for producing piezoelectric device

A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer located on a bonding surface of a piezoelectric single crystal substrate. A second metal layer is located on a bonding surface of a support substrate. The first and second metal layers are overlaid on each other to define a metal bonded layer. Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed.

Anti-icing coating for power transmission lines

Provided are methods and systems for forming piezoelectric coatings on power line cables using sol-gel materials. A cable may be fed through a container with a sol-gel material having a piezoelectric material to form an uncured layer on the surface of the cable. The layer is then cured using, for example, infrared, ultraviolet, and/or other types of radiation. The cable may be suspended in a coating system such that the uncured layer does not touch any components of the system until the layer is adequately cured. Piezoelectric characteristics of the cured layer may be tested in the system to provide a control feedback. The cured layer, which may be referred to as a piezoelectric coating, causes resistive heating at the outer surface of the cable during vibration of the cable due transmission of alternating currents and environmental factors.

Package-integrated piezoelectric device for blood-pressure monitoring using wearable package systems

Embodiments of the invention include a wearable blood-pressure monitor and methods of forming such devices. In an embodiment, the blood-pressure monitor includes a stretchable substrate. Additionally, a semiconductor die may be embedded within the stretchable substrate. In order to determine blood-pressure, the blood-pressure monitor may include an electrocardiogram sensor and a piezoelectric sensor for detecting a ballistocardiograph response. In an embodiment, both types of sensor may be electrically coupled to the semiconductor die. Embodiments of the invention include a piezoelectric sensor that includes a piezoelectric layer and a first and second electrode. In an embodiment the first electrode is in contact with a first surface of the piezoelectric layer, and the second electrode is in contact with a second surface of the piezoelectric layer that is opposite to the first surface.

Pattern formation method, manufacturing method of piezoelectric film and manufacturing method of piezoelectric element

A pattern formation method includes forming an electromagnetic wave blocking structure having a region on a one side of a support substrate, a reflectance of an electromagnetic wave in the region being lower than a reflectance in an area outside the region; forming a mask layer provided with an opening corresponding to the region and configured to be thermally decomposed at a predetermined temperature on an other side of the support substrate; forming a first heated layer in the opening; and shedding an electromagnetic wave from the one side of the support substrate on the electromagnetic wave blocking structure, wherein an intensity of the electromagnetic wave is determined such that a temperature of the mask layer is less than the predetermined temperature and a temperature of the first heated layer being heated is greater than or equal to the predetermined temperature.

Rf acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same

An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.

Acoustic wave device and method of fabricating the same

An acoustic wave device includes: a mounting substrate; a first wiring layer located on an upper surface of the mounting substrate, the first wiring layer including a first bond region and a first connection region connecting with the first bond region and having a thickness substantially equal to a thickness of the first bond region; an element substrate mounted on the mounting substrate; an acoustic wave element located on a lower surface of the element substrate; and a second wiring layer located on the lower surface of the element substrate, the second wiring layer including a second bond region and a second connection region, the second bond region directly bonding with the first bond region of the first wiring layer, the second connection region connecting the acoustic wave element with the second bond region and having a thickness substantially equal to a thickness of the second bond region.

Method for manufacturing a substrate for a radiofrequency device

A process for fabricating a substrate for a radiofrequency device by joining a piezoelectric layer to a carrier substrate by way of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, the process being characterized in that it comprises the following steps: —providing a piezoelectric substrate having a rough surface for reflecting a radiofrequency wave, —depositing a dielectric layer on the rough surface of the piezoelectric substrate, —providing a carrier substrate, —depositing a photo-polymerizable adhesive layer on the carrier substrate, —bonding the piezoelectric substrate to the carrier substrate by way of the dielectric layer and of the adhesive layer, in order to form an assembled substrate, —irradiating the assembled substrate with a light flux in order to polymerize the adhesive layer, the adhesive layer and the dielectric layer together forming the electrically insulating layer.

A piezoelectric thin film element

A piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between wherein the first electrode is a platinum metal electrode having an average grain size greater than 50 nm and wherein a piezoelectric thin film adjacent the platinum metal electrode comprises a laminate having a plurality of piezoelectric thin film layers wherein a piezoelectric thin film layer contacting the platinum metal electrode comprises lead zirconate titanate (PZT) of composition at or about PbZr x Ti 1-x O 3 where 0<x≤0.60 and has a degree of pseudo cubic {100} orientation greater than or equal to 90%.

Composite Substrate, Piezoelectric Device, and Method for Manufacturing Composite Substrate

A composite substrate 10 includes a piezoelectric substrate 12 and a support layer 14 bonded to the piezoelectric substrate 12 . The support layer 14 is made of a material having no crystalline anisotropy in a bonded surface thereof and has a smaller thickness than the piezoelectric substrate 12 . The piezoelectric substrate 12 and the support layer 14 are bonded together with an adhesive layer 16 therebetween. The composite substrate 10 has a total thickness of 180 μm or less. The base thickness ratio Tr=t2/(t1+t2) is 0.1 to 0.4, where t1 is the thickness of the piezoelectric substrate 12 , and t2 is the thickness of the support layer 14 . The thickness t1 is 100 μm or less. The thickness t2 is 50 μm or less.

Method, electronic apparatus, and system for defect detection

Aspects of the disclosure provide a method including determining a measurement configuration for one or more piezoelectric devices in an electronic apparatus. The electronic apparatus includes an electronic device mounted on a substrate block using a bonding layer. The one or more piezoelectric devices including a first subset and a second subset are attached to one of the electronic device and the bonding layer. The method includes performing, based on the measurement configuration, a defect measurement on the electronic apparatus by causing the first subset to transmit and the second subset to receive one or more acoustic signals. The method includes determining whether at least one mechanical defect is located in at least one of (i) the bonding layer, (ii) the electronic device, (iii) the substrate block, (iv) interfaces of the electronic device, the bonding layer, and the substrate block based on the received one or more acoustic signals.

Composite substrate, elastic wave element, and production method for composite substrate

A composite substrate includes a supporting substrate composed of quartz, a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and an interface layer along a bonding interface between the supporting substrate and the piezoelectric material substrate. The interface layer has amorphous structure and contains constituent components including silicon, oxygen and at least one of tantalum and niobium. The interface layer has concentrations of hydrogen atoms, nitrogen atoms and fluorine atoms of 1×1018 atoms/cm3 or higher and 5×1021 atoms/cm3 or lower, respectively.

Thin-film piezoelectric material element, method of manufacturing the same, head gimbal assembly, hard disk drive, ink jet head, variable focus lens and sensor

A thin-film piezoelectric material element includes a lower electrode film, a piezoelectric material film, and an upper electrode film, the lower electrode film, the piezoelectric material film and the upper electrode film are laminated sequentially. An upper surface of the piezoelectric material film is a concavity and convexity surface having a convex part and a concave part, the convex part is a curved surface convexly projected, and the concave part is a curved surface concavely hollowed, the upper electrode film is formed on the concavity and convexity surface. The thin-film piezoelectric material element has a stress balancing film formed with a material having an internal stress capable of cancelling an element stress, the stress balancing film is formed on the upper electrode film.

Piezoelectric actuator and method for manufacturing piezoelectric actuator

A piezoelectric actuator includes a substrate, a first electrode arranged on the substrate, a piezoelectric body stacked on the first electrode, a second electrode superimposed on a surface of the piezoelectric body on a side opposite to the first electrode, and a wiring connected to the first electrode. The first electrode has a connecting portion which is arranged to protrude from an end portion of the piezoelectric body and to which the wiring is connected, and a first conductive portion is provided so that the first conductive portion overlaps with the first electrode while extending over from an area overlapped with the end portion of the piezoelectric body up to the connecting portion of the first electrode.

Ceramic device and joined body

Provided is a piezoelectric device which has high reliability for the joint between an external electrode and low-melting-point solder. This piezoelectric device is a fired body including a main body part and an external electrode. The external electrode includes a surface electrode that covers upper and lower surfaces of the main body part, and a side-surface electrode that covers a side surface of the main body part and makes a connection to the surface electrode. This piezoelectric device is obtained by co-firing all of constituent members. The surface electrode is configured to include platinum (Pt) or palladium (Pd). The side-surface electrode is also configured to include platinum (Pt) or palladium (Pd). In addition, the side-surface electrode contains gold (Au). The content ratio of gold in the side-surface electrode is preferably 3 to 20 weight %.

Method of manufacture for single crystal capacitor dielectric for a resonance circuit

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

Method for producing ferroelectric thin film

A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.

Piezoelectric film, piezoelectric element, and method for manufacturing piezoelectric film

Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0<x<1, and 0.10≤y<0.13, in which in a case where a ratio I(200)/I(100) of a diffraction peak intensity I(200) from a perovskite (200) plane with respect to a diffraction peak intensity I(100) from a perovskite (100) plane, as measured by an X-ray diffraction method, is r, and a/b is q, 0.28r+0.9≤q≤0.32r+0.95, 1.10≤q≤1.25, and r≤1.00 are satisfied.

Thin-film piezoelectric material element

A thin-film piezoelectric material elements are arranged on a thin-film piezoelectric material substrate. The thin-film piezoelectric material substrate includes an insulator on Si substrate including a substrate including silicon and an insulating layer on a surface of the substrate. The thin-film piezoelectric material element includes a thin-film laminated part on a top surface of the insulating layer. The thin-film laminated part includes a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film including lead zirconate titanate, shown by a formula Pb (Zr x Ti (1-x) ) O 3 (0≤×≤1), and an upper electrode film laminated on the piezoelectric material film. The thin-film laminated part further includes an upper piezoelectric-material protective-film, laminated on the upper side of the upper electrode film.

Piezoelectronic transistor with co-planar common and gate electrodes

A method of forming a piezoelectronic transistor (PET), the PET, and a semiconductor device including the PET are described. The method includes forming a piezoelectric (PE) element with a trench and forming a pair of electrodes on the PE element in a coplanar arrangement in a first plane, both of the pair of electrodes being on a same side of the PE element. The method also includes forming a piezoresistive (PR) element above the pair of electrodes and forming a clamp above the PR element. Applying a voltage to the pair of electrodes causes displacement of the PE element perpendicular to the first plane.

Method and structure for single crystal acoustic resonator devices using thermal recrystallization

A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.

Mems structures and methods of forming mems structures

A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.

Piezo-actuated mems resonator

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

Piezoelectric layer, piezoelectric component, piezoelectric actuator, piezoelectric sensor, hard-disk drive and ink jet printer

A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO 3 , wherein, in the Raman spectroscopy measurement of the piezoelectric layer which is performed while the piezoelectric layer is rotated in the in-plane direction, the measured intensity of the lattice vibration region of the perovskite type compound in the Raman spectrum obtained in polarized Raman spectroscopy measurement (yx) has a periodicity of approximately 90°, wherein, the polarized Raman spectroscopy measurement (yx) is performed while the piezoelectric layer is rotated in the in-plane direction and Raman scattering light is polarized in a direction perpendicular to that of the incident light.

Method for manufacturing a hybrid structure

A method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

Multi-layered film, method of manufacturing the same, and manufacturing apparatus of the same

A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

Electric device, piezoelectric motor, robot, hand, and liquid transport pump

An electric device includes an electric component that includes an electrode terminal which includes a projection portion, and a circuit substrate that includes a connected portion which is electrically connected to the projection portion, in which the connected portion includes a recess portion that is in contact with the projection portion.

Method for manufacturing ferroelectric film

To provide a method for manufacturing a ferroelectric film formed of a lead-free material. The method for manufacturing a ferroelectric film according to an aspect of the present invention is a method for manufacturing a ferroelectric film including the steps of pouring a sol-gel solution for forming (K 1-X Na X )NbO 3 into a mold 3, calcining the sol-gel solution to form a (K 1-X Na X )NbO 3 material film inside the mold 3, heat-treating and crystallizing the (K 1-X Na X )NbO 3 material film in an oxygen atmosphere to form a (K 1-X Na X )NbO 3 crystallized film inside the mold 3 and removing the mold 3 through etching, and is characterized in that the mold 3 is more easily etched than the (K 1-X Na X )NbO 3 crystallized film and the X satisfies a formula below 0.3≦X≦0.7.

Deformable heterostructures, electronic devices incorporating the same, and methods of making the same

Highly deformable heterostructures utilizing liquid metals and nanostructures that are suitable for various applications, including but not limited to stretchable electronic devices that can be worn, for example, by a human being. Such a deformable heterostructure includes a stretchable substrate, a conductive liquid metal on the substrate, and nanostructures forming a solid-liquid heterojunction with the conductive liquid metal.

Piezoelectric material, piezoelectric device including the piezoelectric material, and method of manufacturing the piezoelectric material

A piezoelectric material includes a first material layer including a polycrystalline lead zinc niobate-lead zirconate titanate material arranged in a 001 crystal direction; and a second material layer including a mono-crystalline material having a 001 crystal face, wherein the lead zinc niobate-lead zirconate titanate and the mono-crystalline material are different. Also a piezoelectric device including the piezoelectric material.

Method for evaluating piezoelectric film, piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

A method for evaluating a piezoelectric film containing a perovskite oxide containing a lead atom, a zirconium atom, and a titanium atom, and the method includes a process of irradiating the piezoelectric film with X-rays to acquire an extended X-ray absorption fine structure (EXAFS) spectrum at the L3 absorption edge of the lead atom, a process of Fourier-transforming the extended X-ray absorption fine structure (EXAFS) spectrum to acquire a radial distribution function, and a process of acquiring the intensity of a first peak having a distance from the lead atom of 1.4±0.2 Å, the intensity of a second peak having a distance from the lead atom of 2.0±0.2 Å, and the intensity of a third peak having a distance from the lead atom of 2.6±0.2 Å from the radial distribution function, and then evaluating the film quality of the piezoelectric film from a value obtained by dividing the intensity of the first peak by the intensity of the second peak and a value obtained by dividing the intensity of the first peak by the intensity of the third peak.

Method of manufacturing ultrasonic probe

Provided is a method of manufacturing an ultrasonic probe. The method includes forming a sacrificial layer on a substrate; forming a plurality of openings in the sacrificial layer that are separated from one another; forming piezoelectric units by growing a piezoelectric element in each of the plurality of openings; and removing the sacrificial layer.

Infrared detector pixel structure and manufactureing method thereof

The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.

Method for producing composite wafer having oxide single-crystal film

A composite wafer has an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, includes steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and applying ultrasonic vibration to the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

Piezoelectric element, method of manufacturing piezoelectric element, piezoelectric actuator, and electronic apparatus

Provided is a piezoelectric element including a substrate, electrodes, and a piezoelectric film, the piezoelectric film including an oxide including Ba, Ca, Ti, and Zr, and at least one element of Mn and Bi in which: 0.09≦x≦0.30 is satisfied, where x is a mole ratio of Ca to a sum of Ba and Ca; 0.025≦y≦0.085 is satisfied, where y is a mole ratio of Zr to a sum of Ti, Zr, and Sn; and 0≦z≦0.02 is satisfied, where z is a mole ratio of Sn to the sum of Ti, Zr, and Sn; a total content S ave of Mn and Bi is 0.0020 moles or more and 0.0150 moles or less for 1 mole of the oxide; and a total content S bou of Mn and Bi in a region of the piezoelectric film adjacent to one of the electrodes is smaller than S ave .

Method of manufacturing zinc oxide nanosheet structure, and electronic apparatus and touch sensor apparatus having the zinc oxide nanosheet structure

Disclosed herein is a method of manufacturing a zinc oxide nanosheet structure. The zinc oxide nanosheet structure may be manufactured by forming a zinc oxide seed on a substrate and growing zinc oxide from the zinc oxide seed in a zinc oxide growth solution in which zinc precursors and a doping-element-containing compound are dissolved.

Mems process power

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

Electronic devices formed in a cavity between substrates and including a via

An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.

Microphone device and method of forming a microphone device

A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

Vibrating device and manufacturing method therfor

A vibrating device having vibrating arms connected to a supporter. The vibrating arms have an n-type Si layer which is a degenerated semiconductor and an exciter provided on the n-type Si layer. The exciter has a piezoelectric thin film and a first and second electrodes with the piezoelectric thin film interposed therebetween.

Multi-frequency guided wave devices and fabrication methods

A micro-electrical-mechanical system (MEMS) guided wave device includes a piezoelectric layer including multiple thinned regions of different thicknesses each bounding in part a different recess, different groups of electrodes on or adjacent to different thinned regions and arranged for transduction of lateral acoustic waves of different wavelengths in the different thinned regions, and at least one bonded interface between the piezoelectric layer and a substrate. Optionally, a buffer layer may be intermediately bonded between the piezoelectric layer and the substrate. Methods of producing such devices include locally thinning a piezoelectric layer to define multiple recesses, bonding the piezoelectric layer on or over a substrate layer to cause the recesses to be bounded in part by either the substrate or an optional buffer layer, and defining multiple groups of electrodes on or over the different thinned regions.

Piezoelectric element and piezoelectric element device

A piezoelectric element includes a first electrode formed on a substrate, a piezoelectric layer formed on the first electrode and composed of a complex oxide having a perovskite structure containing potassium (K), sodium (Na), niobium (Nb), and manganese (Mn), and a second electrode formed on the piezoelectric layer. The manganese includes divalent manganese (Mn 2+ ), trivalent manganese (Mn 3+ ), and tetravalent manganese (Mn 4+ ), a molar ratio of the divalent manganese to a sum of the trivalent manganese and the tetravalent manganese ((Mn 2+ /(Mn 3+ +Mn 4+ )) is 1 or more and 10 or less, and a molar ratio of the potassium to the sodium (K/Na) is 1.1 or less.

Ultrasound transducer and method for wafer level back face attachment

Methods and systems are provided for a single element ultrasound transducer. In one embodiment, the ultrasound transducer comprises a front face, a back face parallel to the front face, a piezoelectric layer having a top surface electrically coupled to the signal pad and a bottom surface electrically coupled to the ground pad. In this way, the transducer can work robustly and may be automatically mounted to an imaging probe.

Method and apparatus for manufacturing semiconductor device

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A voltage is applied to the intermediate layer. A unit cell of the intermediate layer is stretched or compressed by the voltage. The polarity of the intermediate layer is changed by the voltage.

Micro electro mechanical system, semiconductor device, and manufacturing method thereof

The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.

Systems, devices and methods for wirelessly delivering haptic effects

Systems, devices, and methods for wirelessly delivering haptic effects are provided. The devices may include haptic actuators secured to various substrates, including the body and clothing of a user. The haptic actuators may be secured via adhesive and/or may be applied as a curable liquid. The haptic actuators may include an actuator element and a power element. The power element may include an antenna for receiving wireless power and control signals that may be transferred to the haptic actuator to cause a haptic effect.

Piezoelectric element and liquid ejection head

A piezoelectric element includes: a first electrode containing crystal grains; a piezoelectric layer which contains potassium, sodium, and niobium and which is provided above the first electrode; and a second electrode provided above the piezoelectric layer, and the average grain diameter of the crystal grains is less than 550 nm.

Cavity structures

A cavity structure comprises a cavity substrate comprising a substrate surface, one or more cavity walls extending from the substrate surface, a cap disposed on the one or more cavity walls, and at least a portion of a module tether physically attached to the cavity substrate. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume, for example enclosing a vacuum, air, an added gas, or a liquid. The cavity structure can be a micro-transfer printable structure provided on a cavity structure source wafer. A plurality of cavity structures can be disposed on a destination substrate, for example by transfer printing, dry contact printing, or micro-transfer printing.

Method for producing film and liquid ejection head

A method of producing a film including repeating a cycle comprised of an application step, a coat removal step and a sintering step N times (N≥2), wherein relative to a liquid supply position in the (n)th (1≤n≤N-1) cycle coat removal step, a liquid supply position in the (n+1)th cycle coat removal step is the same or shifted in a direction approaching the center of a substrate for all n(s) and at the same time, shifted in a direction approaching the center of the substrate for at least one of the (n)s; or is the same or shifted in a direction away from the center of the substrate for all n(s) and at the same time, shifted in a direction away from the center of the substrate for at least one of the (n)s.