Microresonator

A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Heat pipe and method of manufacturing the same

A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

PROCESS FOR OBTAINING A THIN, INSULATING, SOFT MAGNETIC FILM OF HIGH MAGNETIZATION, CORRESPONDING FILM AND CORRESPONDING INTEGRATED CIRCUIT

A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Process for obtaining a thin, insulating, soft magnetic film of high magnetization

A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.

Bulk acoustic resonator with matched resonance frequency and fabrication process

The resonator comprises a piezoelectric layer arranged between two electrodes. An electrical heating resistor is arranged in thermal contact with at least one of the electrodes. Temporary heating of the electrode enables the material constituting the electrode to be partially evaporated, so as to thin the electrode and thus adjust the resonance frequency. Measurement of the resonance frequency in the course of evaporation enables the heating to be interrupted when the required resonance frequency is obtained. One of the electrodes can be arranged on a substrate formed by an acoustic Bragg grating. The resonator can comprise a substrate comprising a cavity whereon one of the electrodes is at least partially arranged.

Method for forming a variable capacitor

A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Assembly of a microswitch and of an acoustic resonator

The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.

HEAT PIPE AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips. 1. A method of manufacturing a heat pipe , the method comprising:in a substrate, forming an opening with a plurality of ring-shaped recesses radially extending around a central axis of the opening;in the recesses, arranging a plurality of ring-shaped strips made of a material configured to catalyze growth of carbon nanotubes; andgrowing carbon nanotubes in the opening from said ring-shaped strips.2. The method of claim 1 , wherein forming the opening with the plurality of ring-shaped recesses comprises alternating between anisotropic etch steps and passivation deposition steps.3. The method of claim 2 , wherein the anisotropic etch steps are carried out by an SFplasma etch claim 2 , and the passivation steps are carried out by a CFplasma deposition.4. The method of claim 1 , wherein the opening includes walls and a bottom surface claim 1 , wherein arranging the plurality of ring-shaped strips comprises depositing claim 1 , on the walls of the opening claim 1 , a continuous layer of a material configured to catalyze growth of carbon nanotubes claim 1 , the method further comprising focused isotropic etching of a portion of the continuous layer located outside of the recesses.5. The method of claim 4 , wherein said continuous layer includes iron or aluminum.6. The method of claim 1 , further comprising claim 1 , prior to arranging the plurality of ring-shaped strips claim 1 , depositing claim 1 , on walls of the opening claim 1 , an intermediate layer made of a bonding material for said catalyst material.7. The method of claim 6 , wherein the bonding material of the ...

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Integrated structure with improved heat dissipation

An integrated structure includes a support supporting at least one chip and a heat dissipating housing, attached to the chip. The housing is thermally conductive and has a thermal expansion compatible with the chip. The housing may further including closed cavities filled with a phase change material.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Method for the adhesion of two elements, in particular of an integrated circuit, for example an encapsulation of a resonator, and corresponding integrated circuit

A method for attaching a first element to a second element is provided. The first element has a surface portion covered with a layer of silicon, and the second element has a surface portion covered with a layer of nickel. The method includes applying pressure so that the surface portions of the first and second elements are in contact with one another. A roughness between the surface portions is less than about 1 μm, and the first and second elements are heated within a range of about 250° C. to 400° C.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Acoustic resonator support, acoustic resonator and corresponding integrated circuit

A support 7 for an acoustic resonator 4 includes at least one bilayer assembly having a layer of high acoustic impedance material 11 and a layer of low acoustic impedance material 12 made of material having a low electrical permittivity.

Method for making an electromechanical component on a plane substrate

Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Method of manufacturing bistable strips having different curvatures

A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

METHOD OF MANUFACTURING A VIBRATORY ACTUATOR FOR A TOUCH PANEL WITH HAPTIC FEEDBACK

The disclosure relates to a method of manufacturing vibratory elements, comprising forming on a substrate a multilayer structure by an integrated circuit manufacturing method, the multilayer structure comprising an element susceptible of vibrating when it is subjected to an electrical signal, and electrodes for transmitting an electrical signal to the vibratory element, the vibratory element comprising a mechanical coupling face that is able to transmit to control element vibrations perceptible by a user.

Process for obtaining a thin, insulating, soft magnetic film of high magnetization

A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Acoustic resonator support, acoustic resonator and corresponding integrated circuit

A support 7 for an acoustic resonator 4 includes at least one bilayer assembly having a layer of high acoustic impedance material 11 and a layer of low acoustic impedance material 12 made of material having a low electrical permittivity.

Electromechanical resonator and method for fabricating such a resonator

An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam ( 10 ) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part ( 12 ), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part ( 12 ) of the beam is separated from the active zone (ZA) and from the control electrode (E).

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

INTEGRATED CIRCUIT COMPRISING A DEVICE WITH A VERTICAL MOBILE ELEMENT INTEGRATED IN A SUPPORT SUBSTRATE AND METHOD FOR PRODUCING THE DEVICE WITH A MOBILE ELEMENT

The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element. 1. An integrated circuit comprising:a support substrate provided with opposite first and second main surfaces,a cavity passing through the support substrate from one of the main surface to the opposite main surface,a device with a mobile element formed in said support substrate, wherein the mobile element is included in the cavity, the mobile element having an anchoring node on the first main surface and a maximum displacement area, the anchoring node and the maximum displacement area defining an axis substantially perpendicular to the first and second main surfaces,at least one elementary chip arranged on one of the main surfaces and adapted to be electrically linked to the device with a mobile element.2. The device according to claim 1 , comprising an actuating circuitry of the mobile element included in the cavity.3. The device according to claim 2 , wherein the actuating circuitry is configured to perform electrostatic actuation and comprises a first electrode overlapping a second electrode claim 2 , one of the electrodes being arranged on the mobile element.4. The device according to claim 1 , comprising a second anchoring node of the mobile element on the second main surface.5. The device according to claim 1 , wherein the at least one elementary chip is formed in the support substrate made from semi-conductor material.6. The device according to claim 1 , ...

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit

An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Method for making an electromechanical component on a plane substrate

Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

Integrated circuit comprising an auxiliary component, for example a passive component or a microelectromechanical system, placed above an electronic chip, and the corresponding fabrication process

The fabrication of an integrated circuit includes a first phase of producing an electronic chip and a second phase of producing at least one auxiliary component placed above the chip and of producing a protective cover which covers the auxiliary component. The first phase of producing the chip is effected from a first semiconductor substrate and comprises the formation of a cavity lying in a chosen region of the chip and emerging at the upper surface of the chip. The second production phase includes the production of the auxiliary component from a second semiconductor substrate, separate from the first, and then the placement in the cavity of the auxiliary component supported by the second substrate and the mutual adhesion of the second substrate to the upper surface of the chip lying outside the cavity. The second substrate then also forms the protective cover.

Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients

A device comprising a resonator formed of a piezoelectric layer sandwiched between two metal electrodes, the resonator being laid on a suspended beam, the device comprising means for deforming said beam by the difference in thermal expansion coefficients.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Switchable inductance

A switchable inductance that can be formed in an integrated circuit, including a spiral interrupted between two first points connected to two terminals via two metallizations running one above the other, one of the two metallizations being deformable; a hollowing between the two metallizations; and a switching device capable of deforming the deformable metallization to separate or to put in contact said two metallizations.

Coupled lamb wave resonators filter

A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit

An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.

Method for forming a tunable piezoelectric microresonator

A process for manufacturing a resonator including the steps of: forming on an insulating substrate a first portion of a conductive material and a second portion of another material on the first portion; forming an insulating layer having its upper surface flush with the upper part of the second portion; forming by a succession of depositions and etchings a beam of a conductive material above the second portion, the beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above the beam portion located above the second portion; and removing the second portion.

Microresonator

A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

MICRORESONATOR

A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Method for forming a tunable piezoelectric microresonator

A process for manufacturing a resonator including the steps of: forming on an insulating substrate a first portion of a conductive material and a second portion of another material on the first portion; forming an insulating layer having its upper surface flush with the upper part of the second portion; forming by a succession of depositions and etchings a beam of a conductive material above the second portion, the beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above the beam portion located above the second portion; and removing the second portion.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Method for forming a variable capacitor

A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Acoustic resonator device

Acoustic resonator device (1) includes an active element (6) and a support provided with a membrane (5). The active element (6) is provided with at least one piezoelectric layer (10) and is surmounted by a multilayer stack (12). The multilayer stack (12) is provided with at least three layers, including at least one layer (15) of high acoustic impedance and at least one layer (13) of low acoustic impedance. An integrated circuit including at least one such acoustic resonator device is also disclosed.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

Мiсrоrеsоnаtоr

А miсrоrеsоnаtоr соmprising а singlе-сrуstаl siliсоn rеsоnаnt еlеmеnt аnd аt lеаst оnе асtivаtiоn еlесtrоdе plасеd сlоsе tо thе rеsоnаnt еlеmеnt, in whiсh thе rеsоnаnt еlеmеnt is plасеd in аn оpеning оf а sеmiсоnduсtоr lауеr соvеring а substrаtе, thе асtivаtiоn еlесtrоdе bеing fоrmеd in thе sеmiсоnduсtоr lауеr аnd bеing lеvеl аt thе оpеning.

INTEGRATED STRUCTURE WITH IMPROVED HEAT DISSIPATION

An integrated structure includes a support supporting at least one chip and a heat dissipating housing, attached to the chip. The housing is thermally conductive and has a thermal expansion compatible with the chip. The housing may further including closed cavities filled with a phase change material.

METHOD OF MANUFACTURING BISTABLE STRIPS HAVING DIFFERENT CURVATURES

A method of manufacturing bistable strips having different curvatures, each strip including a plurality of portion of layers of materials, wherein at least one specific layer portion is deposited by a plasma spraying method in conditions different for each of the strips. 1. A method , comprising:manufacturing a first bistable strip having a first curvature, manufacturing the first strip including forming a first plurality of layers including a first layer, wherein forming the first layer includes depositing the first layer by plasma spraying using a first set of conditions; andmanufacturing a second bistable strip having a second curvature different from the first curvature, manufacturing the second strip including forming a second plurality of layers including a second layer, wherein forming the second layer includes depositing the second layer by plasma spraying using a second set of conditions different from the first set of conditions.2. The method of claim 1 , wherein conditions include at least one of the following: applied RF power claim 1 , power and frequency of a pulsed DC generator claim 1 , temperature claim 1 , and biasing of a substrate holder.3. The method of claim 1 , wherein the first and second layers are of a first material claim 1 , wherein the first and second plurality of layers include:a layer of a second conductive material;a layer of a third piezoelectric material; anda layer of a fourth conductive material.4. The method of claim 3 , wherein the first and third materials are identical.5. The method of claim 3 , wherein the first and third materials are aluminum nitride claim 3 , the second conductive material is platinum claim 3 , and the fourth conductive material is aluminum.6. The method of claim 4 , wherein the layer of the first material has a thickness in a range from 10 to 500 nm claim 4 , the layer of the second conductive material has a thickness in a range from 10 to 500 nm claim 4 , the layers of the third and fourth materials ...

HEAT PIPE AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips. 1. A method of manufacturing a heat pipe , the method comprising:in a substrate of semiconductor material, forming an opening with a plurality of ring-shaped recesses radially extending around a central axis of the opening, the ring-shaped recesses being vertically stacked along the central axis;in the recesses, arranging a plurality of ring-shaped strips made of a material configured to catalyze growth of carbon nanotubes; andgrowing carbon nanotubes in the opening from the ring-shaped strips towards the central axis.2. The method of claim 1 , wherein forming the opening with the plurality of ring-shaped recesses comprises alternating between anisotropic etch steps and passivation deposition steps.3. The method of claim 2 , wherein the anisotropic etch steps are carried out by an SFplasma etch claim 2 , and the passivation steps are carried out by a CFplasma deposition.4. The method of claim 1 , wherein the opening is delimited by walls and a bottom surface of the substrate claim 1 , wherein arranging the plurality of ring-shaped strips comprises depositing claim 1 , on the walls of the opening claim 1 , a continuous layer of a material configured to catalyze growth of carbon nanotubes claim 1 , the method further comprising focused isotropic etching of a portion of the continuous layer located outside of the recesses.5. The method of claim 4 , wherein the continuous layer includes iron or aluminum.6. The method of claim 1 , further comprising claim 1 , prior to arranging the plurality of ring-shaped strips claim 1 , depositing claim 1 , on walls of the opening claim ...

METHOD FOR ADHESIONING TWO ELEMENTS, IN PARTICULAR AN INTEGRATED CIRCUIT, FOR EXAMPLE RESONATOR ENCAPSULATION, AND CORRESPONDING INTEGRATED CIRCUIT

Integrated circuit with electromechanical component includes cavity defined between two substrates for auxiliary component

The circuit includes a first semiconductor substrate supporting the electronic circuit, and a second substrate carrying an electromechanical component. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component. The first phase of manufacture includes forming the semiconductor chip (PC) within a first substrate, and forming a cavity in the upper surface of this substrate to accommodate an auxiliary component. A wall remains around the cavity, leaving the cavity as a well. The second phase includes formation of the auxiliary component (CAX) on a second semiconductor substrate (SB2), separate from the first. The second substrate is then turned over and applied to the first substrate as a lid with the auxiliary component hanging within the cavity of the first substrate. The two substrates are glued together forming a sealed and protective enclosure for the auxiliary component.

METHOD FOR FORMING A VARIABLE CAPACITOR

METHOD FOR PRODUCING AN ELECTROMECHANICAL COMPONENT ON A PLANAR SUBSTRATE

SUPPORT FOR ACOUSTIC RESONATOR, ACOUSTIC RESONATOR AND CORRESPONDING INTEGRATED CIRCUIT

MOS TRANSISTOR WITH DEFORMABLE GRID

METHOD FOR EARLY DETECTION OF A RISK OF WATER CONDENSATION ON A SURFACE WHICH IS IN CONTACT WITH A WET AIR VOLUME

METHOD FOR MANUFACTURING BISTABLE BLADES OF DIFFERENT CURVES

Method for manufacturing vibratory actuator for e.g. resistive type touch panel of mobile terminal, involves forming first vibratory actuator element, coupling interface and electrodes, and forming first multilayer structure on substrate

The method involves forming a first vibratory actuator element on a substrate (SB) to vibrate in response to an electrical signal, and forming a first mechanical coupling interface coupled to the element and a control unit (CNTC), where the coupling interface vibrates the control unit as the element vibrates. First electrodes are formed to transmit the electrical signal to the element. A first multilayer structure is formed on the substrate. A second multilayer structure is formed on the substrate by forming a second vibratory actuator element and second electrodes. Independent claims are also included for the following: (1) a vibratory device (2) a system comprising a touch panel.

METHOD FOR THE EARLY DETECTION OF A RISK OF WATER CONDENSATION ON A SURFACE IN CONTACT WITH A WET AIR VOLUME

Procédé pour détecter un risque de condensation d'eau sur une surface se trouvant au contact d'un volume d'air humide, selon lequel on dispose sur la surface un élément sensible qui prend initialement une température correspondant sensiblement à celle de la surface, et l'on provoque sur cet élément sensible, à l'aide de moyens de refroidissement et de chauffage, une succession de cycles thermiques constitués chacun par une phase de refroidissement et une phase de chauffage. On réalise la phase de refroidissement de chaque cycle en au moins deux étapes consécutives, à savoir, une première étape au cours de laquelle on fournit une forte puissance aux moyens de refroidissement (3, 4) pour abaisser rapidement la température de l'élément sensible en dessous de la température de la surface (1), et une seconde étape au cours de laquelle on fournit une faible puissance aux moyens de refroidissement (3, 4) pour abaisser lentement la température de l'élément sensible jusqu'à la fin de la phase de refroidissement. Method for detecting a risk of water condensation on a surface in contact with a volume of humid air, according to which a sensitive element is placed on the surface which initially takes a temperature substantially corresponding to that of the surface, and this sensitive element is caused by means of cooling and heating means, a succession of thermal cycles each consisting of a cooling phase and a heating phase. The cooling phase of each cycle is carried out in at least two consecutive stages, namely, a first stage during which a high power is supplied to the cooling means (3, 4) in order to rapidly lower the temperature of the sensitive element below the temperature of the surface (1), and a second step during which low power is supplied to the cooling means (3, 4) to slowly lower the temperature of the sensitive element until the end of the cooling phase.

CALODUC AND METHOD OF MANUFACTURING

Adhesion of two elements comprises nickel-silicon welding at low temperature, for encapsulation of components in integrated circuits and microelectromechanical systems

The adhesion of a first element (1), of which at least a part of the surface is coated with silicon, on a second element (2), of which at least a part of the surface is coated with nickel, incorporates an adhesion stage effected by NiSi welding at greater than 250degreesC, the rugosity between the two parts of the surface of the two elements being less than 1 micron. An Independent claim is also included for an integrated circuit incorporating two elements joined by NiSi welding.

SWITCHABLE FILTER WITH RESONATORS.

INTEGRATED CIRCUIT INCLUDING AN AUXILIARY COMPONENT, FOR EXAMPLE A PASSIVE COMPONENT OR AN ELECTROMECHANICAL MICROSYSTEM, PROVIDED ABOVE AN ELECTRONIC CHIP, AND CORRESPONDING MANUFACTURING METHOD

ELECTROMECHANICAL RESONATOR AND METHOD OF MANUFACTURING SUCH A RESONATOR

Variable capacitor formation, involves placing punch in support on substrate at level of recess for providing desired shape to upper part of material such as non reticulated resin, curing material and removing punch to form cavity

The method involves forming a recess in an insulating substrate (1), and placing a malleable material (20) such as a non reticulated resin in the recess. A punch (30) is placed in support on the substrate at the level of the recess so as to provide a desired shape to an upper part of the malleable material. The malleable material is cured, and the punch is removed to form a cavity, where a part of the cavity has a shape of a groove.

INTEGRATED CIRCUIT HAVING A VERTICAL MOBILE ELEMENT DEVICE INTEGRATED INTO A SUPPORT SUBSTRATE AND METHOD OF MAKING THE MOBILE ELEMENT DEVICE

Le circuit intégré comporte un substrat de support (1) ayant des première et seconde faces principales (2a, 2b) opposées. Une cavité traverse le substrat de support (1) et relie les première et seconde faces principales (2a, 2b). Le circuit intégré comporte un dispositif à élément mobile (5) dont l'élément mobile (6) et un couple d'électrodes (7) associées sont inclus dans une cavité. Un nœud d'ancrage de l'élément mobile (6) est localisé au niveau de la première face principale (2a). Le circuit intégré comprend une première puce (3) élémentaire disposée au niveau de la première face principale (2a) et connectée électriquement au dispositif à élément mobile (5). The integrated circuit comprises a support substrate (1) having opposite first and second main faces (2a, 2b). A cavity passes through the support substrate (1) and connects the first and second main faces (2a, 2b). The integrated circuit includes a movable element device (5) whose movable element (6) and a pair of associated electrodes (7) are included in a cavity. An anchor node of the movable member (6) is located at the first major face (2a). The integrated circuit comprises a first elementary chip (3) disposed at the first major face (2a) and electrically connected to the moving element device (5).

MOS TRANSISTOR WITH DEFORMABLE GRID

L'invention concerne un transistor MOS à grille déformable formé dans un substrat semiconducteur, comprenant des zones de source et de drain séparées par une zone de canal s'étendant dans une première direction de la source au drain et dans une deuxième direction perpendiculaire à la première, une poutre conductrice de grille placée au moins au-dessus de la zone de canal s'étendant dans la deuxième direction entre des points d'appui placés sur le substrat de chaque côté de la zone de canal, et tel que la surface de la zone de canal est creuse et a une forme semblable à celle de la poutre de grille lorsque celle-ci est en déflexion maximale vers la zone de canal. The invention relates to a deformable gate MOS transistor formed in a semiconductor substrate, comprising source and drain regions separated by a channel region extending in a first direction from the source to the drain and in a second direction perpendicular to the source. first, a grid conductive beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on either side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the grid beam when the latter is in maximum deflection towards the channel area.

Switchable filter for signal transmission and/or reception device, has acoustic resonators with resonant layers respectively placed between electrodes, and acoustic insulation unit, where layers are made of electrostrictive material

The filter (100) has an acoustic resonator (108) comprising a resonant layer (110) that is placed between electrodes (112, 114). An acoustic resonator (118) comprises a resonant layer (120) that is placed between electrodes (122, 124), where the resonator (118) is acoustically coupled with the resonator (108). One of the electrodes (114, 122) is placed between the layers (110, 120), where the layers are made of an electrostrictive material. An acoustic insulation unit (104) is provided such that the resonator (108) is placed between the resonator (118) and the unit (104). An independent claim is also included for a signal transmission and/or reception device comprising an antenna connected to a switchable filter.

PROCESS FOR OBTAINING SOFT MAGNETIC THIN FILM, WITH HIGH MAGNET, INSULATION, INTEGRATED FILM AND INTEGRATED CIRCUIT

L'invention concerne un procédé d'obtention d'un film mince magnétique doux, à forte aimantation et isolant, comprenant une nitruration de nanograins ferromagnétiques riches en Fe immergés dans un substrat amorphe et une oxydation sélective du substrat amorphe.L'invention concerne également les films minces magnétiques doux à forte aimantation et isolant obtenus par le présent procédé.L'invention propose également un circuit intégré comprenant un composant utilisant une membrane incorporant un film mince obtenu par le même procédé. The invention relates to a method of obtaining a soft, strong magnetization and insulating magnetic thin film, comprising nitriding of ferromagnetic nanograins rich in Fe immersed in an amorphous substrate and selective oxidation of the amorphous substrate. soft magnetic thin films with strong magnetization and insulating obtained by the present process. The invention also provides an integrated circuit comprising a component using a membrane incorporating a thin film obtained by the same process.

Peltier effect device, in particular for detecting the risk of condensation on a surface in contact with a volume of moist air

A B R E G E Société Anonyme dite : IMRA EUROPE SA Pour : Dispositif à effet PELTIER, notamment pour la détection d'un risque de condensation sur une surface se trouvant au contact d'un volume d'air humide. Invention : GSCHWIND Michel - ANCEY Michel Dispositif à effet PELTIER, notamment pour la détection d'un risque de condensation, comportant un substrat et des bandes semi-conductrices sur la face supérieure dudit substrat, des jonctions raccordant lesdites bandes pour former un circuit série constitué alternativement par des bandes de type N et des bandes de type P, toutes les jonctions d'un même type étant situées dans la zone centrale de la face supérieure du substrat et formant une zone de détection du dispositif. Les bandes semi-conductrices de même type sont disposées d'un même côté de la face supérieure du substrat, lequel comporte en outre, une métallisation de sa face inférieure formant des bandes de jonction (9). SHORT Public limited company called: IMRA EUROPE SA For: PELTIER effect device, in particular for the detection of a risk of condensation on a surface in contact with a volume of humid air. Invention: GSCHWIND Michel - ANCEY Michel PELTIER effect device, in particular for detection a risk of condensation, comprising a substrate and bands semiconductors on the upper face of said substrate, junctions connecting said strips to form a series circuit consisting alternately by N type bands and P type bands, all junctions of the same type being located in the central area of the upper face of the substrate and forming a detection zone of the device. Semiconductor strips of the same type are arranged on the same side of the upper face of the substrate, which comprises further, a metallization of its underside forming strips of junction (9).

MEMS type electromechanical resonator, has vibrating beam anchored in shallow trench isolation region by one free end and comprising monocrystalline silicon median part

The resonator has a monocrystalline silicon substrate provided with an active zone surrounded by a shallow trench isolation region (STI). A vibrating beam is anchored on the region by one of free ends (14, 16) and comprises a monocrystalline silicon median part (12). A control electrode (E) is placed above the beam and is supported on the active zone. The median part is separated from the active zone and the electrode. An independent claim is also included for a method of manufacturing an electromechanical resonator.

RADIOFREQUENCY DEVICE WITH MAGNETIC ELEMENT AND METHOD FOR MANUFACTURING SUCH A MAGNETIC ELEMENT

ACOUSTIC VOLUME RESONATOR WITH ADJUSTED RESONANCE FREQUENCY AND METHOD OF MAKING SAME

Peltier effect apparatus for detecting the likelihood of condensation on a surface that is in contact with moist air

Integrated circuit comprising a device with a vertical mobile element integrated in a supporting substrate and method for manufacturing the device with a mobile element

The circuit has a cavity passing through a support substrate (1) e.g. interface plate, and connecting main faces (2a, 2b). A movable element (6) is provided in the cavity. The element has an anchor node at the level of one of the faces and a maximal displacement zone. The node and the zone are connected by an axis perpendicular to the main faces. An elementary electronic chip (3) is arranged at the level of the main faces and electrically connected to a movable element device (5) i.e. electromechanical resonator. An electrostatic type actuating unit of the element is provided in the cavity. An independent claim is also included for a method for forming a movable element device comprising a movable element and an electrode.

METHOD FOR MANUFACTURING BISTABLE BLADES OF DIFFERENT CURVES

L'invention concerne un procédé de fabrication de lamelles bistables (13) de courbures différentes, chaque lamelle comprenant plusieurs portions de couches de matériaux (15, 17, 19, 21), dans lequel au moins une portion de couche particulière est déposée par un procédé de pulvérisation sous plasma dans des conditions différentes pour chacune des lamelles. The invention relates to a method for producing bistable strips (13) of different curvatures, each lamella comprising several portions of layers of materials (15, 17, 19, 21), in which at least one portion of a particular layer is deposited by a plasma spraying process under different conditions for each of the lamellae.

Electromechanical resonator and method for fabricating such a resonator

An electromechanical resonator includes a monocrystalline-silicon substrate (S) provided with an active zone (ZA) delimited by an insulating region, a vibrating beam ( 10 ) anchored by at least one of its free ends on the insulating region and including a monocrystalline-silicon vibrating central part ( 12 ), and a control electrode (E) arranged above the beam and bearing on the active zone. The central part ( 12 ) of the beam is separated from the active zone (ZA) and from the control electrode (E).

Method of manufacturing a piezoelectric tunable microresonator

Support and decoupling structure for an acoustic resonator, acoustic resonator and corresponding integrated circuit

An acoustic resonator assembly includes a layer of high-acoustic-impedance material and a layer of low-acoustic-impedance material made of a low-electrical-permittivity material. This assembly may support the resonator over an interconnect layer or act as a decoupling assembly between two active elements of the resonator. The assembly may alternatively include three low-acoustic impedance layers. Alternatively, the assembly may include three acoustic impedance layers wherein two of the layers are low acoustic impedance layers and the third layer has a higher acoustic impedance than the first two or alternatively is a high-acoustic impedance layer.

Soft magnetic film with high magnetization capability, manufacturing process and corresponding integrated circuit

FILTER WITH LAMB WAVE RESONATORS.

Manufacturing method for an electromechanical component on a flat substrate

Microresonator for use as filter, has activation electrodes positioned close to resonant unit made from monocrystalline silicon, formed in semiconductor layer and leveled with opening in layer

The microresonator has a resonant unit (160) made from monocrystalline silicon, and activation electrodes (120, 121) positioned close to the resonant unit. The unit (160) is placed in an opening in a semiconductor layer (110) that covers a substrate (100). The electrodes (120, 121) are formed in the layer and leveled with the opening. The unit (160) is in the shape of mushroom whose leg is fixed on the substrate. An independent claim is also included for a method of fabricating a microresonator.

Method and device for determining condensation on a surface

Soft magnetic film having a high magnetization, methof for manufacturing thereof and corresponding integrated circuit

The method involves nitriding ferromagnetic nanograins rich in iron immersed in an amorphous substrate (SB), and selectively oxidizing the substrate. The nitriding is effectuated by reactive cathodic or ionic sputtering under magnetic field in the presence of nitrogen. The oxidation is effectuated by reactive sputtering in the presence of oxygen. The oxidation and nitriding are carried out simultaneously. Independent claims are also included for the following: (A) a thin soft magnetic film having high magnetization and insulation; and (B) an integrated circuit comprising a component utilizing a membrane incorporating a film.

Coupled lamb wave resonators filter

A coupled Lamb wave resonator filter includes first and second Lamb wave resonators. The first Lamb wave resonator includes a first resonant layer, and first and second electrodes on opposite sides of the first resonant layer. The second Lamb wave resonator includes a second resonant layer, and third and fourth electrodes on opposite sides of the second resonant layer. One of the sides of the first resonant layer belongs to a plane parallel to a plane corresponding to one of the sides of the second resonant layer. Both planes pass through the third and fourth electrodes of the second Lamb wave resonator. A periodic lattice acoustically couples the first and second resonant layers.

ACOUSTIC VOLUME RESONATOR WITH ADJUSTED RESONANCE FREQUENCY AND METHOD OF MAKING SAME

Le résonateur comporte une couche piézoélectrique (3) disposée entre deux électrodes (1, 2). Une résistance électrique (9) de chauffage est disposée en contact thermique avec au moins une des électrodes (1). Le chauffage temporaire de l'électrode (1) permet d'évaporer partiellement le matériau constituant l'électrode (1), de manière à amincir l'électrode (1) et, ainsi, d'ajuster la fréquence de résonance. La mesure de la fréquence de résonance au cours de l'évaporation permet d'interrompre le chauffage lorsque la fréquence de résonance désirée est obtenue. L'une des électrodes peut être disposée sur un substrat constitué par un réseau de Bragg acoustique. Le résonateur peut comporter un substrat (4) comportant une cavité (5) sur laquelle est disposée, au moins partiellement, l'une des électrodes (2). The resonator comprises a piezoelectric layer (3) disposed between two electrodes (1, 2). An electric heating resistor (9) is arranged in thermal contact with at least one of the electrodes (1). Temporary heating of the electrode (1) partially evaporates the material constituting the electrode (1), so as to thin the electrode (1) and thus adjust the resonance frequency. Measuring the resonance frequency during evaporation allows the heating to be interrupted when the desired resonant frequency is obtained. One of the electrodes may be disposed on a substrate consisting of an acoustic Bragg grating. The resonator may comprise a substrate (4) comprising a cavity (5) on which at least one of the electrodes (2) is arranged.

Process and device for determining a risk of water condensation on a surface in contact with a wet air volume

The method is essentially characterised in that a sensitive element is arranged on the surface, which sensitive element initially takes on a temperature substantially corresponding to that of the surface, and a first heating phase, up to a temperature greater than the temperature of the surface, then a cooling phase, down to a temperature lower than the temperature of the surface, are caused on this sensitive element, and a comparison is made between the ratio of the duration of the first heating phase (to) to the rise in temperature during the heating ( DELTA T) and the ratio of the duration of the cooling phase (t'1) to the decrease in temperature during the cooling, a significant difference between these two ratios being indicative of a risk of condensation on the surface. The device includes all the elements allowing the method to be implemented. It may, in particular, comprise a Peltier effect module. <IMAGE>

Microresonator

A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Integrated circuit containing an auxiliary device, e. g. a passive device or a microelectromechanical system, placed on an electronic chip, and method for its manufacture

La fabrication d'un circuit intégré comporte une première phase de réalisation d'une puce électronique et une deuxième phase de réalisation d'au moins un composant auxiliaire disposé au-dessus de la puce et d'un capot protecteur recouvrant le composant auxiliaire. Selon un mode de mise en oeuvre, la première phase de réalisation de la puce PC s'effectue à partir d'un premier substrat semiconducteur et comporte la formation d'une cavité CV située dans une zone choisie de la puce et débouchant au niveau de la surface supérieure de la puce. La deuxième phase de réalisation comporte la réalisation du composant auxiliaire CAX à partir d'un deuxième substrat semiconducteur SB2, distinct du premier, puis le placement dans ladite cavité, du composant auxiliaire supporté par le deuxième substrat SB2, et l'adhésion mutuelle du deuxième substrat sur la surface supérieure de la puce située à l'extérieur de ladite cavité, le deuxième substrat SB2 formant alors également ledit capot protecteur.

METHOD FOR PRODUCING AN ELECTROMECHANICAL COMPONENT ON A PLANAR SUBSTRATE

Procédé de réalisation d'un composant électromécanique (10) sur un substrat (15) plan et comportant une structure vibrante (22) dans le plan du substrat et des électrodes d'actionnement (23), et comprend les étapes successives suivantes :- formation du substrat comportant une zone en silicium (16) recouverte en partie par deux zones isolantes (18),- formation d'une couche sacrificielle en alliage de silicium et de germanium à partir de la partie non recouverte de la zone en silicium,- formation d'une couche (20) en silicium, fortement dopé, comportant une zone monocristalline (20b) disposée sur ladite couche sacrificielle et deux zones polycristallines (20a) disposées sur les zones isolantes,- formation simultanée de la structure vibrante et des électrodes, par gravure dans la zone monocristalline d'un motif prédéterminé destiné à former des espaces (24) entre les électrodes et la structure vibrante,- élimination de ladite couche sacrificielle. A method of producing an electromechanical component (10) on a planar substrate (15) and having a vibrating structure (22) in the plane of the substrate and of the actuating electrodes (23), and comprises the following successive steps: - formation of the substrate comprising a silicon zone (16) partly covered by two insulating zones (18), - formation of a silicon-germanium alloy sacrificial layer from the non-covered part of the silicon zone, - formation a highly doped silicon layer (20) having a monocrystalline zone (20b) disposed on said sacrificial layer and two polycrystalline zones (20a) disposed on the insulating zones, - simultaneous formation of the vibrating structure and the electrodes, by etching in the monocrystalline zone a predetermined pattern for forming spaces (24) between the electrodes and the vibrating structure, - removing said sacrificial layer.

A method of evaluating the risk of humid air condensing on a surface

The invention concerns a method and an apparatus for evaluating the risk of condensation on a surface in contact with a volume of humid air, by using a sensor including a detection zone that is brought to the temperature of the surface and that is subjected to temperature cycles about the surface temperature. The method consists in performing the following steps: a) selecting an initial temperature amplitude; b) subjecting the detection zone to a temperature cycle of temperature amplitude equal to the selected temperature amplitude; c) if condensation is detected on the detection zone, selecting a smaller temperature amplitude and returning to b); d) if no condensation is detected and no condensation was detected with the previously-selected temperature amplitude, selecting a greater temperature amplitude and returning to b); and e) if no condensation is detected but condensation was detected with the previously-selected temperature amplitude, indicating a corresponding level of risk.

CALODUC AND METHOD OF MANUFACTURING

L'invention concerne un procédé de fabrication d'un caloduc (130), comportant les étapes suivantes : a) former dans un substrat (100) une ouverture cylindrique (107) munie d'une pluralité de renfoncements annulaires s'étendant radialement autour d'un axe central de l'ouverture (107) ; b) disposer dans les renfoncements des bandes annulaires (115) disjointes en un matériau catalyseur pour la croissance de nanotubes de carbone ; et c) faire croitre des nanotubes de carbone (117) dans l'ouverture (107) à partir desdites bandes annulaires (115). The invention relates to a method for manufacturing a heat pipe (130), comprising the following steps: a) forming in a substrate (100) a cylindrical opening (107) provided with a plurality of annular recesses radially extending around a central axis of the opening (107); b) disposing in the recesses annular bands (115) disjoint in a catalyst material for the growth of carbon nanotubes; and c) growing carbon nanotubes (117) in the aperture (107) from said annular tapes (115).

Herstellungsverfahren für ein elektromechanisches bauteil auf einem ebenen substrat

Volumenwellenresonator mit angepasster resonanzfrequenz und herstellungsverfahren hierfür

Micro-electromechanical resonance device with periodic structure

A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.

Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients

A device comprising a resonator formed of a piezoelectric layer sandwiched between two metal electrodes, the resonator being laid on a suspended beam, the device comprising means for deforming said beam by the difference in thermal expansion coefficients.

Micro-electromechanical resonance device with periodic structure

A Micro Electro Mechanical Systems resonance device includes a substrate, and an input electrode, connected to an alternating current source having an input frequency. The device also includes an output electrode, and at least one anchoring structure, connected to the substrate. The device further includes a vibratile structure connected to an anchoring structure by at least one junction, having a natural acoustic resonant frequency. The vibration under the effect of the input electrode, when it is powered, generates, on the output electrode, an alternating current wherein the output frequency is equal to the natural frequency. The vibratile structure and/or the anchoring structure includes a periodic structure. The periodic structure includes at least first and second zones different from each other, and corresponding respectively to first and second acoustic propagation properties.

Stimmbarer Mikroresonator auf isolierendem und mittels Bimetall - Effekt verbiegbarem Träger

Verfahren und vorrichtung zur bestimmung der kondensation auf einer oberfläche

Stator de moteur piezoelectrique et moteur piezoelectrique muni d'un tel stator

L'invention est relative à un stator de moteur piézoélectrique (17) comportant des éléments piézoélectriques dont les déformations axiales combinées provoquent des déformations tridimensionnelles du stator. Chaque élément piézoélectrique (17) a une première extrémité (17a) au contact du stator et une seconde extrémité (17b) au contact d'une masse individuelle (20), toutes les masses individuelles étant mécaniquement isolées les unes des autres, de manière à pouvoir se déplacer de façon autonome.

Heat pipe and method of manufacturing the same

A method of manufacturing a heat pipe, including the steps of: forming in a substrate a cylindrical opening provided with a plurality of ring-shaped recessed radially extending around a central axis of the opening; arranging in the recesses separate ring-shaped strips made of a material catalyzing the growth of carbon nanotubes; and growing carbon nanotubes in the opening from said ring-shaped strips.