DEVICE COMPONENTS WITH SURFACE-EMBEDDED ADDITIVES AND RELATED MANUFACTURING METHODS

Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

METHOD FOR PREPARING POROUS POLYSILOXANE FILM, POROUS POLYSILOXANE FILM PREPARED BY THE SAME AND SOLAR CELL MODULE COMPRISING THE SAME

METHOD FOR CALCULATING CAPACITY OF ENERGY STORAGE APPARATUS AND POWER MANAGEMENT APPARATUS USING SAME

Disclosed are a method for calculating an appropriate capacity of an energy storage apparatus and a power management apparatus which uses the method to manage an emergency power supply capacity of a hybrid energy storage apparatus. The power management apparatus comprises: a data collection unit to collect a current power consumption amount to predict a power consumption amount by trend analysis or receive a predicted power consumption amount from a maximum power device; a storage unit to store data by date, month, and year, and classify data by season or usage pattern to manage the data; a prediction unit to retrieve the pattern on every operating day to store the pattern as an operating pattern of the corresponding day and predict a power consumption amount; and a compensation unit to modify continuous power consumption amount prediction data based on prediction data of the prediction unit and measurement data acquired while being actually operated. COPYRIGHT KIPO 2017 (S21) Input information ...

For energy distribution system and method

Electrically conductive film and electronic device comprising the same

그래핀을 완충층으로 사용한 게르마늄 단결정 박막의 제조 방법

... 본 발명은 그래핀을 사용하여 성장한 고품질 단결정 게르마늄 박막의 제조방법에 관한 것이다. 본 발명에 따른 단결정 게르마늄 박막 성장법은 저압 화학기상증착(LP-CVD) 방법을 기반으로, 실리콘 옥사이드 기판 위에 형성된 그래핀을 완충층으로 하여 게르마늄 박막을 성장시키는 것이다. 실리콘 옥사이드 기판 위에 그래핀을 전사시키는 단계, 저온에서 게르마늄 박막 성장하는 단계, 게르마늄 박막의 결정성을 향상시키는 열처리 단계 및 고온에서 게르마늄 박막을 성장하는 단계를 통하여 고품질의 게르마늄 단결정 박막을 얻을 수 있다.

METHOD FOR MODIFYING GRAPHENE, MODIFIED GRAPHENE OBTAINED THEREBY AND SOLAR CELL USING SAME

The present invention relates to a method for modifying graphene, which comprises treating graphene with electron beams including electrons having an energy of 0.1 eV to 1.5 MeV and a current density of 1 μA/cm^2 to 1.2 mA/cm^2, modified graphene obtained thereby, and an organic solar cell using the same. The method for modifying graphene according to the present invention is a simple method using no solvent and can provide graphene having an optimized [O]/[C] ratio. In addition, the modified graphene obtained by the method has a small water contact angle while maintaining conductivity and transparency. Thus, the modified graphene shows excellent wettability to the hydrophilic surrounding materials and can be used as a transparent electrode for an organic solar cell. In addition, the modified graphene obtained by the method has a p-doping effect. Therefore, the modified graphene may be used as a material for a hole transport layer besides a transparent electrode for an organic solar cell ...

REDUNDANCY TECHNOLOGY-BASED DISTRIBUTED CONTROL SYSTEM AND AGENT THEREOF

The present invention relates to an agent, comprising: a parent microgrid (PM) module which is connected to an upper-level agent; a child microgrid (CM) module which is connected to a lower-level agent; an MD module which is connected to a microgrid device; and a mirroring module which dualizes information of a first agent which is jointly connected to the upper-level agent. The first agent is jointly connected to the upper-level agent. The PM module, the CM module, and the MD module, when the first agent is in an abnormal status, substitute for the first agent, and control the microgrid devices connected to the first agent. COPYRIGHT KIPO 2017 ...

With surface embedded additive device assembly and related method of manufacture

DEVICE COMPONENTS WITH SURFACE-EMBEDDED ADDITIVES AND RELATED MANUFACTURING METHODS

Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

GERMANIUM SINGLE CRYSTAL THIN FILM USING GRAPHENE AS BUFFER LAYER AND MANUFACTURING METHOD THEREOF

The present invention relates to a high quality single crystal germanium thin film grown by using graphene and a manufacturing method. A single crystal germanium thin film growing method according to the present invention grows a germanium thin film by using the graphene, formed on a silicon oxide substrate, as a buffer layer based on a low pressure chemical vapor deposition (LP-CVD) method. The present invention comprises the steps of: transferring the graphene on the silicon oxide substrate; growing the germanium thin film at low temperatures; performing heat treatment for enhancing crystallinity of the germanium thin film; and growing the germanium thin film at high temperatures to acquire the high quality germanium single crystal thin film. COPYRIGHT KIPO 2016 (211) Silicon (Si) substrate (212) Silicon oxide (SiO_x) (220) Buffer layer (Graphene) (231) Low temperature germanium thin film layer (232) High temperature germanium thin film layer ...

DEVICE COMPONENTS WITH SURFACE-EMBEDDED ADDITIVES AND RELATED MANUFACTURING METHODS

Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

The conductive thin film and an electronic device

그래핀의 변성방법, 그로부터 얻어지는 변성된 그래핀 및 그를 이용한 유기태양전지

... 본 발명에서는 0.1ev 내지 1.5MeV의 에너지, 1㎂/cm2 내지 1.2mA/cm2의 전류 밀도를 가진 전자들로 이루어진 전자빔을 이용하여 처리하는 것을 특징으로 하는 그래핀의 변성방법, 그로부터 얻어지는 그래핀, 및 그를 이용한 유기태양전지를 제공한다. 본 발명에 따르는 그래핀 변성방법은 용매를 사용하지 않는 단순한 방법으로 최적화된 [O]/[C] 비율을 가지는 그래핀을 얻을 수 있다. 또한, 상기 방법으로 얻어지는 변성된 그래핀은 전도성과 투명성을 잃지 않으면서도 낮은 수접촉각을 가진다. 그에 따라 친수성의 주변재료들에 대하여 젖음성이 우수하여, 유기태양전지의 투명전극으로 사용될 수 있다. 또한, 상기 방법으로 얻어지는 변성된 그래핀은 p-도핑된 효과를 갖는다. 따라서, 유기태양전지의 투명전극 외에도 정공 수송층 물질로 사용될 수도 있다.

DEVICE COMPONENTS WITH SURFACE-EMBEDDED ADDITIVES AND RELATED MANUFACTURING METHODS

표면 매립 첨가제를 가진 디바이스 콤포넌트 및 이와 관련된 제조 방법

... 활성 또는 기능 첨가제가 태양 디바이스, 스마트 윈도우, 디스플레이 등등을 포함하는 다양한 전자 또는 광전자 디바이스의 콤포넌트로서 사용되기 위해 호스트 물질의 표면내로 매립된다. 표면 매립 디바이스 콤포넌트는 그들 화합물 및 제조 프로세스로부터 야기되는 비용 절감 뿐만 아니라 개량된 성능을 제공한다.

METHOD FOR MANUFACTURING GERMANIUM SINGLE CRYSTAL THIN FILM BY USING LOW PRESSURE CHEMICAL VAPOR DEPOSITION

The present invention relates to a technology for growing a high quality germanium single crystal thin film grown on a silicon substrate including a silicon oxide layer to which a transferring process is easily applied. According to the present invention, a method for manufacturing a germanium single crystal thin film is a process of growing a germanium thin film on a silicon oxide by using a low pressure chemical vapor deposition (LP-CVD). Specifically, the method for manufacturing a germanium single crystal thin film comprises the steps of: growing the germanium thin film on a silicon oxide layer at a low temperature; improving the crystallizability of the germanium thin film through a heat treatment; growing the germanium thin film at a high temperature; and obtaining a high quality germanium single crystal thin film through etching. COPYRIGHT KIPO 2016 (211) Silicon substrate (212) Silicon oxide layer (221) Low-temperature germanium thin film layer (222) High-temperature germanium thin ...

METHOD OF MODIFYING GRAPHENE, MODIFIED GRAPHENE OBTAINED THEREBY AND ORGANIC SOLAR CELL USING SAME

The present invention provides a method of modifying a graphene, the method being characterized by using an electron beam made of electrons having an energy of 0.1 eV to 1.5M eV and a current density of 1μA/cm^2 to 1.2 mA/cm^2; graphene obtained thereby; and an organic solar cell using the same. The method of modifying graphene of the present method can produce graphene having an optimal [O]/[C] ratio through a simple method that does not require the use of a solvent. Also, the modified graphene obtained by the above method forms a low water contact angle without losing conductivity and transparency. Accordingly, the modified graphene has excellent wettability with respect to adjacent hydrophilic materials and may be used as a transparent electrode of an organic solar cell. Also, the modified graphene obtained through the above method has a p-doped effect and may be used as a hole transport layer material. COPYRIGHT KIPO 2017 ...

Device components with surface-embedded additives and related manufacturing methods

Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

DEVICE COMPONENTS WITH SURFACE-EMBEDDED ADDITIVES AND RELATED MANUFACTURING METHODS

Device components with surface-embedded additives and related manufacturing methods

Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

System and method for energy distribution

Graphene Solar Cell

A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion.

Graphene Solar Cell And Waveguide

A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion, a plurality of fingers extending from the at least one bus bar portion, and a refractive layer disposed on the first conductive layer.

CIGS Solar Cell and Method for Manufacturing thereof

A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined. The light absorbing surface is located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions. The photoelectric transducer structure includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer.

High Throughput Solar Cell Ablation System

A solar cell is formed using a solar cell ablation system. The ablation system includes a single laser source and several laser scanners. The laser scanners include a master laser scanner, with the rest of the laser scanners being slaved to the master laser scanner. A laser beam from the laser source is split into several laser beams, with the laser beams being scanned onto corresponding wafers using the laser scanners in accordance with one or more patterns. The laser beams may be scanned on the wafers using the same or different power levels of the laser source.

Кремниевый p-i-n фотодиод с низкими темновыми токами

Полезная модель относится к p-i-n фотодиодам на основе кремния, чувствительным к излучению в спектральном диапазоне 0,6-1,1 мкм. Кремниевый p-i-n фотодиод содержит высокоомную подложку р-типа, защитный окисел и диффузионные n-области фоточувствительного слоя и охранного кольца на освещаемой стороне, диффузионную область р-типа на тыльной стороне, при этом под слоем окисла содержится ионнолегированный бором слой с поверхностной концентрацией 10-10см. Особенностями таких фотодиодов являются высокое быстродействие и смещенная в длинноволновую область спектральная характеристика, что дает возможность регистрировать лазерное излучение в ближнем ИК диапазоне. Технический результат полезной модели - снижение темнового тока фотодиода и повышение стабильности характеристик. 3ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 168 495 U1 (51) МПК H01L 31/068 (2012.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ФОРМУЛА ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ РОССИЙСКОЙ ФЕДЕРАЦИИ (21)(22) Заявка: 2016112215, 31.03.2016 (24) Дата начала отсчета срока действия патента: 31.03.2016 06.02.2017 Приоритет(ы): (22) Дата подачи заявки: 31.03.2016 Адрес для переписки: 173003, г.Великий Новгород, ул. Б. СанктПетербургская, 41, НовГУ, Центр патентования (54) Кремниевый p-i-n фотодиод с низкими темновыми токами U 1 окисел и диффузионные n+-области фоточувствительного слоя и охранного кольца на освещаемой стороне, диффузионную область р+-типа на тыльной стороне, отличающийся тем, что под слоем окисла содержится ионнолегированный бором слой с поверхностной R U 1 6 8 4 9 5 концентрацией 1011-1012 см-2. Стр.: 1 U 1 (57) Формула полезной модели Кремниевый p-i-n-фотодиод, содержащий высокоомную подложку р-типа, защитный 1 6 8 4 9 5 (45) Опубликовано: 06.02.2017 Бюл. № 4 (73) Патентообладатель(и): Федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" (RU), Открытое акционерное общество "ОКБ-Планета" (RU) R U ...

Thin Silicon Sheets for Solar Cells

A thin layer of single-crystal silicon is produced by forming first trenches in a silicon substrate having (111) orientation; forming narrower second trenches at the base of the trenches; anisotropically etching lateral channels ( 4 ) from the second trenches, until adjacent etch fonts ( 16 ) substantially meet; and detaching said layer from the substrate. The trenches may be arranged so that the resultant layer has rows of slots, with the slots in adjacent rows being mutually offset. Solar cells may be formed on strips having two electrical contacts on the same face ( 6 ) of each strip ( 5 ).

Dye for dye-sensitized solar cells, method of preparing the same, and solar cell including the dye

A dye for dye-sensitized solar cells includes an organometallic complex represented by M(L) p X 2 :(Z) q . In the organometallic complex, M is a Group 8 through Group 10 metallic element, L is a bidentate ligand, X is a co-ligand, and Z is a counter-ion. The ratio of the bidentate ligand (L) to the counter-ion (Z) is about 1.1 to about 1.4. A method of preparing an exemplary dye includes mixing the organometallic complex with tetrabutylammonium thiocyanate and tetrabutylammonium hydroxide to prepare a solution, and purifying the solution at a pH of about 3.8 to about 4.1. A dye-sensitized solar cell includes a first electrode with a light absorbing layer, a second electrode and an electrolyte between the first and second electrodes. The light absorbing layer includes the dye.

Tetrazine monomers and copolymers for use in organic electronic devices

Copolymers of formula (I): where each A is S, Se or C═C; each x is an integer from 1 to 4; each R1 is independently H, F, CN or a C 1 -C 20 linear or branched aliphatic group; Ar is one or more substituted or unsubstituted aromatic units; and, n is an integer 5 or greater, can be formed into films or membranes that are useful as active layers in organic electronic device, such as PV solar cells, providing high power conversion efficiencies and good thermal stability. Such copolymers may be synthesized from monomers of formula (II): by Stille or Suzuki coupling reactions. Such monomers may be synthesized by a variation of the Pinner synthesis.

Area Sensor and Display Apparatus Provided With An Area Sensor

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

Photo electrodes

Methods of fabricating nano particulate Titanium dioxide photocatalysts onto a conducting substrate are disclosed. The methods include hydrothermal fabrications with heat treatment steps to increase the crystallinity and photoactivity of the titanium dioxide layers.

Organic thin-film solar cell and method of producing same

Providing an organic thin-film solar cell that can be easily manufactured and then mass produced at low cost while increasing the photoelectric conversion efficiency, and the method of producing the same. Solar cells 100 - 102 include at least one of a mixed P-type organic semiconductor layer 12 M and a mixed N-type organic semiconductor layer 14 M. A plurality of organic semiconductor materials are mixed in the mixed P-type organic semiconductor layer 12 M or the mixed N-type organic semiconductor layer 14 M, respectively. In such a way, the photoelectric conversion efficiency of the solar cells is increased by selecting and mixing proper organic semiconductor materials to form the organic semiconductor layer.

Electrolyte additive of dye-sensitized solar cell and method of making the same

An electrolyte additive is selected from N-alkyl benzimidazole derivatives and is applicable to dye-sensitized solar cells. Accordingly, the electrolyte additive can be added to electrolyte at low concentration, and loss of function due to crystallization after long-term use can be prevented; in addition, short circuit photocurrent density and solar energy-to-electricity conversion efficiency of solar cells incorporating the electrolyte additive can be increased.

Buffer layer formation

Manufacturing a photovoltaic device can include a vapor transport deposition process.

Photovoltaic device and method for manufacturing the same

The method includes: steps of forming an n-type diffusion layer having an n-type impurity diffused thereon at a first surface side of a p-type silicon substrate; forming a reflection prevention film on the n-type diffusion layer; forming a back-surface passivation film made of an SiONH film on a second surface of the silicon substrate; forming a paste material containing silver in a front-surface electrode shape on the reflection prevention film; forming a front surface electrode that is contacted to the n-type diffusion layer by sintering the silicon substrate; forming a paste material containing a metal in a back-surface electrode shape on the back-surface passivation film; and forming a back surface electrode by melting a metal in the paste material by irradiating laser light onto a forming position of the back surface electrode and by solidifying the molten metal.

Articles comprising phyllosilicate composites containing mica

Disclosed is a mica paper composite and a process for making the mica paper composite. Articles comprising the mica paper composite are also disclosed.

Organic electronic device, compounds for same, and terminal

Disclosed are an organic electronic device and a compound thereof, and a terminal.

Method and system for application of an insulating dielectric material to photovoltaic module substrates

A method and related system are provided for depositing a dielectric material into voids in one or more of the semiconductor material layers of a photovoltaic (PV) module substrate. A first side of the substrate is exposed to a light source such that light is transmitted through the substrate and any voids in the semiconductor material layers on the opposite side of the substrate. The light transmitted through the voids is detected and a printer is registered to the pattern of detected light to print a dielectric material and fill the voids.

Charge control of solar cell passivation layers

The present invention relates to the charge control of the front and back passivation layers of a solar cell, which allows a common passivation material to be used on both the front and back surfaces of a solar cell. A solar cell according to one embodiment of the present invention comprises an emitter and a base. The cell further includes a first passivation layer adjacent the emitter, the first passivation layer having a charge. The cell also includes a second passivation layer adjacent the base, the second passivation layer having a charge opposite to the charge of the first passivation layer, wherein the first passivation layer and the second passivation layer include a common passivation material. The first and second passivation layers can include any suitable dielectric material capable of holding either a positive or a negative charge, and each of the first and second passivation layers can be charged at any suitable point during manufacture of the cell, including during or after deposition of the passivation layer(s).

Back contacting and interconnection of two solar cells

Method for producing back contacts on silicon solar cells and an interconnection between silicon solar cells where the front surface has been fully treated and the back surface has been processed to the point where the said solar cells can be contacted on the back surface. The method further includes: a) attaching the solar cells onto a transparent superstrate, thereby forming a structure, b) depositing a passivating layer onto the back surface of the structure, c) depositing a silicon material layer onto the back surface of the structure, d) separating the silicon material layer by first areas, e) providing contact sites in areas, f) depositing a metal layer onto the back surface of the structure, g) heating the structure to form silicide, h) optionally opening the metal layer in areas, and i) depositing metal onto the silicide. Device includes solar cells with back contacts and interconnections produced by the method.

Intermixing of cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices and methods of their manufacture

Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride.

Photodetector structure and method of manufacturing the same

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Mold shape to optimize thickness uniformity of silicon film

A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

Photoelectrochemical cell and energy system using the same

A photoelectrochemical cell ( 100 ) includes: a semiconductor electrode ( 120 ) including a substrate ( 121 ), a first n-type semiconductor layer ( 122 ) disposed on the substrate ( 121 ), and a second n-type semiconductor layer ( 123 ) and a conductor ( 124 ) disposed apart from each other on the first n-type semiconductor layer ( 122 ); a counter electrode ( 130 ) connected electrically to the conductor ( 124 ); an electrolyte ( 140 ) in contact with surfaces of the second n-type semiconductor layer ( 123 ) and the counter electrode ( 130 ); and a container ( 110 ) accommodating the semiconductor electrode ( 120 ), the counter electrode ( 130 ) and the electrolyte ( 140 ). In the semiconductor electrode ( 120 ), relative to a vacuum level, (I) band edge levels of a conduction band and a valence band in the second n-type semiconductor layer ( 123 ), respectively, are higher than band edge levels of a conduction band and a valence band in the first n-type semiconductor layer ( 122 ), (II) a Fermi level of the first n-type semiconductor layer ( 122 ) is higher than a Fermi level of the second n-type semiconductor layer ( 123 ), and (III) a Fermi level of the conductor ( 124 ) is higher than the Fermi level of the first n-type semiconductor layer ( 122 ). The photoelectrochemical cell ( 100 ) generates hydrogen by irradiation of the second n-type semiconductor layer ( 123 ) with light.

Hybrid photovoltaic cells and related methods

Embodiments of the present invention involve photovoltaic (PV) cells comprising a semiconducting nanorod-nanocrystal-polymer hybrid layer, as well as methods for fabricating the same. In PV cells according to this invention, the nanocrystals may serve both as the light-absorbing material and as the heterojunctions at which excited electron-hole pairs split.

Compositionally-graded band gap heterojunction solar cell

A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.

Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste

A conductive paste including a conductive powder, a metallic glass having a supercooled liquid region, and an organic vehicle.

Nanoscale High-Aspect-Ratio Metallic Structure and Method of Manufacturing Same

Nanoscale high-aspect-ratio metallic structures and methods are presented. Such structures may form transparent electrode to enhance the performance of solar cells and light-emitting diodes. These structures can be used as infrared control filters because they reflect high amounts of infrared radiation. A grating structure of polymeric bars affixed to a transparent substrate is used. The sides of the bars are coated with metal forming nanowires. Electrodes may be configured to couple to a subset of the rails forming interdigitated electrodes. Encapsulation is used to improve transparency and transparency at high angles. The structure may be inverted to facilitate fabrication of a solar cell or other device on the back-side of the structure. Multiple layered electrodes having an active layer sandwiched between two conductive layers may be used. Layered electro-active layers may be used to form a smart window where the structure is encapsulated between glass to modify the incoming light.

Production Process For A Semi-Conductor Device And Semi-Conductor Device

A process for producing a semiconductor device comprises the following process steps: provision of a semiconductor substrate ( 1 ); formation of a functional layer ( 2 ) on a semiconductor surface ( 11 ) of the semiconductor substrate ( 1 ); and production of at least one doped section ( 3 ) on the semiconductor surface ( 11 ) by driving a dopant into the semiconductor substrate ( 1 ) from the functional layer ( 2 ). The functional layer ( 2 ) is formed in such a way that it passivates the semiconductor surface ( 11 ), acting as a passivation layer upon completion of the semiconductor device.

Buffer layer deposition for thin-film solar cells

Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.

Photovoltaic device front contact

A photovoltaic module may contain a front contact configured to transfer electrical current from the module.

Tailoring the band gap of solar cells made of liquid silane by adding germanium

The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.

Blends of fullerene derivatives, and uses thereof in electronic devices

Disclosed are compositions of mixed fullerene derivatives with utility in organic semiconductors, and methods of making and using such compositions. In certain embodiments, the present invention relates to compositions of mixed fullerene derivatives further comprising one or more additional fullerene-based components within specified ranges. In certain other embodiments, the invention relates to methods of producing mixed fullerene derivatives of a specific composition from mixed fullerene starting materials, or pure fullerene derivatives of a specific composition from mixed fullerene derivatives. In yet other embodiments, the invention relates to semiconductors and devices comprising a composition of the invention.

Polymer compositions, polymer films, polymer gels, polymer foams, and electronic devices containing such films, gels and foams

A polymer film, polymer gel, and polymer foam each contain an electrically conductive polymer and an ionic liquid and are each useful as a component of an electronic device.

Semiconductor device, method for manufacturing same, and display device

The present invention provides a semiconductor device capable of suppressing a contact failure due to an increase in contact resistance, a production method of the semiconductor device, and a display device. The present invention provides a semiconductor device which includes a thin-film diode including a crystalline semiconductor layer which includes a cathode region and an anode region, a cathode electrode connected to the cathode region, and an anode electrode connected to the anode region, the thin-film diode, the cathode electrode, and the anode electrode being disposed on a substrate, and which is featured in that the crystalline semiconductor layer includes a first low-impurity-concentration region having an impurity concentration lower than the impurity concentration of the cathode region, in that the first low-impurity-concentration region is arranged adjacent to the cathode region, and in that the cathode electrode is in contact with an area of the cathode region, the area being within 3 μm from the boundary at which the cathode region is in contact with the first low-impurity-concentration region.

Photovoltaic device interconnect

Scribing and deposition processes can be used to interconnect cells within photovoltaic modules.

Bifacial solar cell module

A bifacial solar cell module comprises: a plurality of bifacial solar cells; a light transmitting first substrate positioned at a first surface side of the bifacial solar cells; a light transmitting second substrate positioned at a second surface side of the bifacial solar cells; and a seal member positioned between the first substrate and the second substrate and made of a sealing material of at least one layer, wherein at least one of the first substrate and the second substrate is made of an ethylene tetrafluoroethylene copolymer (ETFE) copolymer in which light transmittance is 85% or more and light absorptance is 5% or less in an entire wavelength band.

Sealing material for solar cell and solar cell module including same

A sealing material for a solar cell and a solar cell including the same, and the sealing material includes a polymer resin having a vicat softening point at 100° C. or 130° C. or between 100° C. and 130° C.

Film used for solar cell module and module thereof

The present invention is directed to a film used for a solar cell module and the module thereof, in which the film includes a substrate and at least one light-regulating layer, and the light-regulating layer includes a fluoro resin and a plurality of light diffusing additives. By applying the film of the subject invention in a solar cell module, the film can make the solar cell have good light utilization.

Silicon-based photovoltaic device produced by essentially electrical means

A photovoltaic device that includes a silicon substrate, selective emitters and field-induced emitters (inversion type) on one side of a silicon substrate; selective back-surface field (BSF) regions or front-surface field (FSF) regions on the other side of the silicon substrate (accumulation-type regions), insulating films on both sides of the silicon substrate, fixed charges of the opposite signs on the opposite sides of the silicon substrate built in the insulating films, respectively, and self-aligned contact regions at least to the selective emitters. A majority of the aforementioned components are produced only by essentially electrical means and without conventional thermal diffusion and masking processes. Entire devices can be manufactured according to a simple method and are characterized by high efficiency, reduced cost, and increased throughput in the field of solar cell fabrication.

Conjugated compound, and organic thin film and organic thin film element each comprising same

A conjugated compound having a group represented by formula (I) and/or formula (II). [In the formulas, Ar represents an optionally substituted trivalent aromatic hydrocarbon or optionally substituted trivalent heterocyclic group, and A represents hydrogen, a halogen atom or a monovalent group. When multiple A groups are present they may be the same or different, and at least one A represents an electron-withdrawing group. Ar′ represents an optionally substituted C6 or greater divalent aromatic hydrocarbon or optionally substituted C4 or greater divalent heterocyclic group, and R1 and R2 are the same or different and each represents hydrogen, a halogen atom or a monovalent group, while A′ represents hydrogen, a halogen atom or a monovalent group. When multiple A′ groups are present they may be the same or different, and at least one A′ represents an electron-withdrawing group.]

Methods for adjusting the conductivity range of a nanotube fabric layer

Methods for adjusting and/or limiting the conductivity range of a nanotube fabric layer are disclosed. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via wet chemistry techniques. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via plasma treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via CVD treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via an inert ion gas implant.

Method of fabricating epitaxial structures

A method of fabricating epitaxial structures including applying an etch stop to one side of a substrate and then growing at least one epitaxial layer on a first side of said substrate, flipping the substrate, growing a second etch stop and at least one epitaxial layer on a second side of the substrate, applying a carrier medium to the ultimate epitaxial layer on each side, dividing the substrate into two parts generally along an epitaxial plane to create separate epitaxial structures, removing any residual substrate and removing the etch stop.

Diketopyrrolopyrrole polymers for use in organic semiconductor devices

The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (I) which are characterized in that Ar 1 and Ar 1 ′ are independently of each other are an annulated (aromatic) heterocyclic ring system, containing at least one thiophene ring, which may be optionally substituted by one, or more groups, and their use as organic semiconductor in organic devices, especially in organic photovoltaics (solar cells) and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

Process for coating glass onto a flexible stainless steel substrate

The present disclosure relates to a method of manufacturing of a glass coated metal product. This invention also relates to a coated metallic substrate material that is suitable for manufacturing flexible solar cells and other articles in which a passivated stainless steel surface is desirable.

Fabrication Of Solar Cells With Silicon Nano-Particles

A solar cell structure includes silicon nano-particle diffusion regions. The diffusion regions may be formed by printing silicon nano-particles over a thin dielectric, such as silicon dioxide. A wetting agent may be formed on the thin dielectric prior to printing of the nano-particles. The nano-particles may be printed by inkjet printing. The nano-particles may be thermally processed in a first phase by heating the nano-particles to thermally drive out organic materials from the nano-particles, and in a second phase by heating the nano-particles to form a continuous nano-particle film over the thin dielectric.

Nanowires formed by employing solder nanodots

A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.

Energy conversion device for photovoltaic cells

An energy conversion device is provided for use, for example, in a photovoltaic solar cell. The device includes an up conversion composite material disposed in cavities in a semiconductor material or in a heat spreader bonded to the solar cell. The up conversion composite material is formed from a mixture of at least two different up conversion materials formed as crystal grains dispersed within an optically transmitting dispersion medium. The up conversion materials may include a crystal material doped with dopant atoms capable of absorbing photons having wavelengths longer than an absorption edge of the semiconductor material and emitting photons having wavelengths shorter than the absorption edge. In this manner, more photons can be utilized in the solar cell and optical coupling between the semiconductor material and the up conversion material is increased,

Photoelectric conversion element, method of manufacturing photoelectric conversion element and solar cell

The present invention provides a photoelectric conversion element exhibiting excellent photoelectric conversion efficiency and excellent stability in photoelectric conversion function; a method of manufacturing the photoelectric conversion element; and a solar cell thereof in order to solve the current problems. Disclosed is a photoelectric conversion element possessing a substrate and provided thereon, a first electrode, a photoelectric conversion layer containing a semiconductor and a sensitizing dye, a hole transport layer and a second electrode, wherein the hole transport layer possesses a polymer having a repeating unit represented by Formula (1) or Formula (2):

Polymers which contain substituted indenofluorene derivatives as structural unit, process for the preparation thereof, and the use thereof

The present invention relates to polymers which contain substituted indenofluorene derivatives as structural unit, to substituted indenofluorene derivatives, to a process for the preparation of the polymers according to the invention, to mixtures and solutions which comprise the polymers according to the invention, and to the use of the polymers according to the invention in electronic devices, in particular in organic electroluminescent devices, so-called OLEDs (OLED=organic light emitting diode).

Organic photoelectric conversion element

A high photoelectric conversion efficiency is provided by an organic photoelectric conversion element comprising a first electrode, a second electrode and an active layer, wherein the active layer is located between the first electrode and the second electrode and contains an electron-donating compound and an electron-accepting compound, and the active layer side of the first electrode surface is treated with a coupling agent followed by a lyophilic treatment.

Method and system for generating electrical energy from water

Method and system for generating electrical energy from a volume of water.

Flexible Monocrystalline Thin Silicon Cell

A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.

Aluminum base material, metal substrate having insulating layer employing the aluminum base material, semiconductor element, and solar battery

A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix.

Tandem thin-film silicon solar cell and method for manufacturing the same

A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.

Solution-processed inorganic photo-voltaic devices and methods of production

Methods of producing photo-voltaic devices include spray coating deposition of metal chalcogenides, contact lithographic methods and/or metal ion injection. Photo-voltaic devices include devices made by the methods, tandem photo-voltaic devices and bulk junction photovoltaic devices.

Alternating Bias Hot Carrier Solar Cells

Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

Heteroleptic, dual tridentate ru(ii) complexes as sensitizers for dye-sensitized solar cells

Photosensitizers having a formula of RuL 1 L 2 (1) are provided, wherein Ru is ruthenium; L 1 and L 2 are heterocyclic tridentate ligands. L 1 has a formula of (2), and L 2 has a formula of G 1 G 2 G 3 (3), wherein G 1 and G 3 are selected from the group consisting of formulae (4) to (7), and G 2 is selected from the group consisting of formulae (7) and (8). The above-mentioned photosensitizers are suitable to be used as sensitizers for fabrication of high efficiency dye-sensitized solar cells.

Photovoltaic devices

A photovoltaic device including a composite down-converting layer disposed on the device, is presented. The composite down-converting layer includes down-converting material particles dispersed in a matrix. The size of the down-converting material particles is a function of a difference in respective refractive indices (Δn) of the down-converting material and the matrix such that: (i) for Δn less than about 0.05, the size of down-converting material particles is in a range from about 0.5 micron to about 10 microns, and (ii) for Δn at least about 0.05, the size of down-converting material particles is in a range from about 1 nanometer to about 500. A photovoltaic module having a plurality of such photovoltaic devices is also presented.

Fabrication of cis or cigs thin film for solar cells using paste or ink

Provided is a method for preparing a copper indium selenide (CIS) or copper indium gallium selenide (CIGS) thin film, including: (1) mixing Cu, In and Ga precursors in a solvent and adding a polymer binder to obtain a paste or ink; (2) coating the obtained CIG precursor paste or ink on a conductive substrate by printing, spin coating or spraying and heat-treating the same under air or oxygen gas atmosphere to remove remaining organic substances and obtain a CIG mixed oxide thin film; (3) heat-treating the obtained CIG mixed oxide thin film under hydrogen or sulfurizing gas atmosphere to obtain a reduced or sulfurized CIG mixed thin film; and (4) heat-treating the obtained reduced or sulfurized CIG mixed thin film under selenium-containing gas atmosphere to obtain a CIGS thin film. Since residual carbon resulting from organic additives, which is the biggest problem in the existing paste coating techniques, can be reduced remarkably, and CIGS crystal size can be improved, the disclosed method can improve efficiency of CIGS solar cells.

Photoelectric conversion element, production method thereof, photosensor, imaging device and their driving method

To provide a photoelectric conversion element capable of functioning as a photoelectric conversion element when a compound having a specific structure is applied to the photoelectric conversion element, causing the element to exhibit a low dark current, and reducing the range of increase in the dark current even when the element is heat-treated, and an imaging device equipped with such a photoelectric conversion element. A photoelectric conversion element having a photoelectric conversion film which is sandwiched between a transparent electrically conductive film and an electrically conductive film and contains a photoelectric conversion layer and an electron blocking layer, wherein the electron blocking layer contains a compound having, as a substituent, a substituted amino group containing three or more ring structures.

Photoelectric converter, method of manufacturing photoelectric converter and imaging device

A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ.

Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors

The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

Alkylsilane laminate, production method thereof and thin-film transistor

Provided is an alkylsilane laminate with which it is possible to obtain an organic semiconductor film having excellent semiconductor properties. Such a laminate can be useful for an organic thin-film transistor. The alkylsilane laminate comprises an underlayer (Sub) having hydroxyl groups at the surface and an alkylsilane thin film (AS) formed on this underlayer. The alkylsilane laminate is a laminate wherein the critical surface energy Ec of the alkylsilane thin film and the number of carbons (X) of the alkylsilane satisfies the following formula (1): Ec≦29.00−0.63 x (mN/m) (1) Also provided is a thin-film transistor ( 10 ) having such an alkylsilane laminate (Sub, AS).

Integrated Shadow Mask/Carrier for Pattern Ion Implantation

An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.

Photoelectric conversion element, method of manufacutring photoelectric conversion element, electrolyte layer for photoelectric conversion element, and electronic apparatus

A photoelectric conversion element has a structure in which an electrolyte layer composed of a porous film containing an electrolyte solution is provided between a porous photoelectrode and a counter electrode.

REO-Ge Multi-Junction Solar Cell

The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.

Organic light-emitting device and method of manufacturing the same

An organic solar cell and a method of manufacturing the same.

Semiconductor substrate for solar cell and solar cell

A solar cell include a polycrystalline semiconductor substrate of a p-type, an emitter region of an n-type and forming a p-n junction with the polycrystalline semiconductor substrate, a first electrode connected to the emitter region, and a second electrode connected to the polycrystalline semiconductor substrate, wherein the polycrystalline semiconductor substrate has a pure p-type impurity concentration of substantially 7.2×10 15 /cm 3 to 3.5×10 16 /cm 3 .

Solar Cell and Manufacturing Method Thereof

A solar cell and a manufacturing method thereof are provided. The method includes forming a microstructure including a texturing on the surface of a semiconductor substrate of a first conductive type, forming a plurality of nanostructures on the surface of the semiconductor substrate, forming an emitter layer by implanting impurities of a second conductive type opposite to the first conductive type in a front face of the semiconductor substrate, forming an anti-reflective coating (ARC) on the emitter layer, forming a front electrode passing through a portion of the ARC and being coupled to the emitter layer, and forming a back electrode on a rear face of the semiconductor substrate of the first conductive type, the rear face being opposite to the face on which the front electrode is formed. A dominant light-collecting characteristic can be approached by forming nanostructures on a semiconductor substrate of a solar cell.

Semiconductor apparatus and method of fabrication for a semiconductor apparatus

The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.

Method to electrodeposit nickel on silicon for forming controllable nickel silicide

The present disclosure relates to an improved method of providing a Ni silicide metal contact on a silicon surface by electrodepositing a Ni film on a silicon substrate. The improved method results in a controllable silicide formation wherein the silicide has a uniform thickness. The metal contacts may be incorporated in, for example, CMOS devices, MEM (micro-electro-mechanical) devices, and photovoltaic cells.

Novel semiconductor and optoelectronic devices

A method for fabricating a light-emitting integrated device, comprises overlying three layers, wherein each of the three layers emits light at a different wavelength, and wherein the overlying comprises one of: performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP).

Gas injection device and solar cell manufacturing method using the same

A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

Pyrrolopyrrole derivatives, their manufacture and use as semiconductors

The present invention relates to compounds of the formula (I) wherein the substituents are as defined in claim 1 , and their use as organic semiconductor in organic devices, like diodes, organic field effect transistors and/or solar cells. The compounds of the formula I have excellent solubility in organic solvents. High efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when said compounds are used in semiconductor devices or organic photovoltaic (PV) devices (solar cells).

Solar cell

A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers comprising quantum dots are stacked alternately and repeatedly, and is formed so that the bandgaps of the quantum dots are gradually widened with increasing distance from a side of the p-type semiconductor layer and decreasing distance to a side of the n-type semiconductor layer.

Graphene-based solar cell

A solar cell includes a transparent upper electrode for conducting electrons and for allowing incoming photons of light to pass therethrough. An exciton trapping region is disposed proximate the upper electrode, and includes graphene and an exciton trapping dye. The trapping dye traps captured excitons, and the graphene rapidly conducts freed electrons therefrom to the upper electrode. A pigment layer, in close proximity to the exciton trapping region, includes one or more pigment dyes that absorb light photons and emit excitons for transmission to the trapping dye. Excitons emitted by a first pigment dye can further trigger emission of excitons by a second pigment dye. A backing electrode is electrically coupled to the pigment layer via an anionic polyelectrolyte for transporting electrons to the pigment layer to replenish electrons conducted by the transparent upper electrode.

Solar Cell and Method Fabricating the Same

A solar cell according to an embodiment includes a pattern layer arranged on a substrate and including a uneven pattern; a back electrode arranged on the pattern layer; a light absorption layer arranged on the back electrode; a buffer layer on the light absorption layer; and a front layer arranged on the buffer layer. The method fabricating a solar cell according to an embodiment includes forming a pattern layer including a uneven pattern on a substrate; forming a back electrode on the pattern layer; forming a light absorption layer on the back electrode; forming a buffer layer on the light absorption layer; and forming a front electrode on the buffer layer.

Photoelectric conversion device and solid-state imaging device

A photoelectric conversion device having: a pair of electrodes; a photoelectric conversion layer sandwiched between the pair of electrodes; and at least one electron blocking layer provided between one electrode of the pair of electrodes and the photoelectric conversion layer, wherein the photoelectric conversion layer contains at least one organic material, and the at least one electron blocking layer has a mixed layer containing fullerene or fullerene derivatives.

Method for preparation of metal chalcogenide solar cells on complexly shaped surfaces

Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is formed; electrophoretic deposition is used to deposit the nanopartieles in a metal thin film onto a complexly shaped surface of the substrate; the metal thin film is heated in the presence of a chalcogen source to convert the metal thin film into a metal chalcogenide thin film layer; a buffer layer is formed on the metal chalcogenide thin film layer using a chemical bath deposition; an intrinsic zinc oxide insulating layer is formed adjacent to a side of the buffer layer, opposite the metal chalcogenide thin film layer, by chemical vapor deposition; and finally, a transparent conducting oxide is formed adjacent to a side of the intrinsic zinc oxide, opposite the buffer layer, by chemical vapor deposition.

Semiconductor optical power architecture

An apparatus, system, and method are disclosed for providing optical power to a semiconductor chip. An active semiconductor layer of the semiconductor chip is disposed toward a front side of the semiconductor chip. The active semiconductor layer comprises one or more integrated circuit devices. A photovoltaic semiconductor layer of the semiconductor chip is disposed between the active semiconductor layer and a back side of the semiconductor chip. The back side of the semiconductor chip is opposite the front side of the semiconductor chip. The photovoltaic semiconductor layer converts electromagnetic radiation to electric power. One or more conductive pathways between the photovoltaic semiconductor layer and the active semiconductor layer provide the electric power from the photovoltaic semiconductor layer to the one or more integrated circuit devices of the active semiconductor layer.

Composition for Solid Electrolyte and Solar Cell Using the Same

A composition for a solid electrolyte includes a polymer compound (A) and a charge transfer material. The polymer compound (A) is obtained by polymerizing a monomer (a) comprising a monomer (a-2) having chelating ability. The charge transfer material is preferably a carbon material and/or a π-conjugated polymer (β). When a polymer electrolyte layer of a dye-sensitized solar cell is formed from the above solid electrolyte, efficient charge transfer and sufficient charge life can be reconciled with each other.

Method of Selective Separation Of Semiconducting Carbon Nanotubes, Dispersion Of Semiconducting Carbon Nanotubes, And Electronic Device Including Carbon Nanotubes Separated By Using The Method

According to example embodiments, a method includes dispersing carbon nanotubes in a mixed solution containing a solvent, the carbon nanotubes, and a dispersant, the carbon nanotubes including semiconducting carbon nanotubes, the dispersant comprising a polythiophene derivative including a thiophene ring and a hydrocarbon sidechain linked to the thiophene ring. The hydrocarbon sidechain includes an alkyl group containing a carbon number of 7 or greater. The hydrocarbon sidechain may be regioregularly arranged, and the semiconducting carbon nanotubes are selectively separated from the mixed solution. An electronic device includes semiconducting carbon nanotubes and the foregoing described polythiophene derivative.

Formation of ordered thin films of organics on metal oxide surfaces

Provided herein is a method for altering an electronic property of a structure comprising an oxide surface or an oxide surface in electronic communication with the structure, the method comprising providing a covalently-bound film comprising at least one organic acid residue on a portion of the oxide surface so that at least one of the following properties of the structure is modified: (a) the charge carrier injection barrier properties; (b) the charge conductivity properties; (c) the charge transport properties; (d) the work function properties; (e) the sub-threshold slope; and (f) the threshold voltage.

Ion implanted solar cells with in situ surface passivation

Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer.

Generating and detecting radiation

A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

Manufacturing method of photoelectric conversion device

A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.

Photovoltaic device

Provided is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate: a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises a hydrogenated amorphous silicon based material and a hydrogenated proto-crystalline silicon based material having a crystalline silicon grain, and comprises a non-silicon based element; and a second electrode disposed on the photoelectric transformation layer.

Dye-sensitized solar cell

A dye-sensitized solar cell includes a first electrode, a light absorption layer disposed on one side of the first electrode, a second electrode facing the first electrode, a light reflecting layer disposed on one side of the second electrode, and an electrolyte filled between the first electrode and the second electrode. Here, the light reflecting layer includes a plurality of thin films including a first oxide thin film and a second oxide thin film, the first oxide thin film has a different refractive index from the second oxide thin film, and the first and second oxide thin films are stacked alternately.

System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices

The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.

Stacked photovoltaic element and method of manufacturing stacked photovoltaic element

Disclosed is a stacked photovoltaic element, including: a first photovoltaic element portion including at least one photovoltaic element, stacked over a substrate; an intermediate layer made of a metal oxide, stacked over the first photovoltaic element portion; a buffer layer in an amorphous state, stacked over the intermediate layer; and a second photovoltaic element portion including at least one photovoltaic element, stacked over the buffer layer, wherein a conductive layer of the second photovoltaic element portion in contact with the buffer layer is a microcrystalline layer.

Photoelectric converter

The photoelectric converter includes a substrate; and multiple cells located on the substrate so as to be overlaid. The first cell contacted with the substrate includes a transparent electrode located on the substrate, and a first photoelectric conversion layer located on the transparent electrode. The other cell or each of the others of the multiple cells includes a porous electroconductive layer located closer to the substrate and including an electroconductive material, and a photoelectric conversion layer located on the porous electroconductive layer. Each of the photoelectric conversion layers of the multiple cells includes an electron transport layer including an electron transport material, a dye connected with or adsorbed on the electron transport material, and a hole transport material. The hole transport material is also contained in voids of the porous electroconductive layer.

Selective emitter solar cells formed by a hybrid diffusion and ion implantation process

Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.

Materials for organic electroluminescent devices

The present invention relates to 4,4′-substituted spirobifluorenes which are suitable, owing to excellent properties, as functional materials in organic electroluminescent devices. In addition, the present invention relates to a process for the preparation of 4,4′-substituted spirobifluorenes and to the use of these compounds in organic electroluminescent devices.

Photoelectric conversion device

A photoelectric conversion device including a substrate, a photoelectric conversion element including a first electrode, a second electrode and an organic compound layer and a sealing member that are disposed in this order. When a cross section of the photoelectric conversion device in a thickness direction is observed with the sealing member being placed at an upper side, a bonding member seals the organic compound layer at an outside thereof. An output electrode on the sealing member has a protrusion. A side conductive portion is electrically connected with the protrusion in an up-and-down direction. A substrate conductive member electrically connected with the first electrode and the second electrode extends to an outside of the bonding member. An electrical connecting member electrically connects the side conductive portion to the substrate conductive member at a further outside of the bonding member.

Composite material comprising nanoparticles and production of photoactive layers containing quaternary, pentanary and higher-order composite semiconductor nanoparticles

A composite material includes at least two components, wherein at least one component is present in the form of nanoparticles, which consist of at least three metals and at least one non-metal and the diameter of which is less than one micrometre, preferably less than 200 nm. The novel composite material is particularly well suited for the production of photoactive layers.

Photoelectric conversion device and electronic equipment

A photoelectric conversion device provided with an electron transport layer having an excellent electron transport ability and having an excellent photoelectric conversion efficiency, and electronic equipment provided with such a photoelectric conversion device and having a high reliability are provided. A solar cell, to which the photoelectric conversion device is applied, has a first electrode provided on a substrate, a second electrode arranged opposite to the first electrode and retained on a facing substrate, an electron transport layer provided between these electrodes and positioned on the side of the first electrode, a dye layer being in contact with the electron transport layer, and an electrolyte layer provided between the electron transport layer and the second electrode and being in contact with the dye layer. The electron transport layer is constituted of a monocrystalline material of multiple oxide as a main component thereof. Further, it is preferred that the monocrystalline material of multiple oxide has a layer structure in a crystal structure thereof.

Thin-film solar cell and manufacturing method thereof

A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

Organic Optoelectronic Component and Method for Producing an Organic Optoelectronic Component

In at least one embodiment of the organic optoelectronic component ( 1 ), the latter comprises a carrier ( 2 ) and a first electrode ( 11 ), which is mounted on the carrier ( 2 ). Furthermore, the component ( 1 ) contains at least one organic layer sequence ( 3 ) with at least one organic active layer ( 33 ). Furthermore, the component ( 1 ) comprises a second electrode ( 22 ), such that the organic layer sequence ( 3 ) is located between the first electrode ( 11 ) and the second electrode ( 22 ). At least one dark region ( 4 ) and at least one bright region ( 5 ) are formed in a lateral direction. In both the dark region ( 4 ) and the bright region ( 5 ), both the first electrode ( 11 ) and the second electrode ( 22 ) and also the organic layer sequence ( 3 ) are applied to the carrier ( 2 ) in places or over the entire surface. A first reflectivity of the dark region ( 4 ) differs from a second reflectivity of the bright region ( 5 ) by at most 15 percentage points.

Thin-film solar battery and method for manufacturing the same

A thin-film solar battery is constructed such that it includes a translucent insulating substrate, a first transparent conductive film formed of a crystalline transparent conductive film on the translucent insulating substrate, with an uneven structure on a surface thereof, a second transparent conductive film formed of a transparent conductive film on the first transparent conductive film, with an uneven structure on a surface thereof, where the uneven structure is more gentle than the uneven structure of the first transparent conductive film, a power generation layer formed on the second transparent conductive film and having at least one crystalline layer to generate power, and a backside electrode layer formed of a light-reflective conductive film on the power generation layer. A substantially convex hollow portion projecting from the translucent insulating substrate is provided between adjacent convex portions in the uneven structure of the first transparent conductive film.

SYNTHESIS OF MULTINARY CHALCOGENIDE NANOPARTICLES COMPRISING Cu, Zn, Sn, S, AND Se

Nanoparticle compositions and methods for synthesizing multinary chalcogenide CZTSSe nanoparticles containing Cu, Zn, and Sn in combination with S, Se or both are described. The nanoparticles may be incorporated into one or more ink solutions alone or in combination with other chalcogenide-based particles to make thin films useful for photovoltaic applications, including thin films from multilayer particle films having a composition profile. The composition and stoichiometry of the thin films may be further modified by subjecting the particle films to gas or liquid phase chalcogen exchange reactions.