投光灯（五杠一星）

ARRAY SUBSTRATE MANUFACTURING METHOD, FILM-LAYER ETCHING MONITORING METHOD, AND APPARATUS

Provided are an array substrate manufacturing method, a film-layer etching monitoring method, and an apparatus. The monitoring method comprises: when a film-layer pattern is formed, monitoring and recording a reference transmittance value of the film layer; forming a barrier layer on the film-layer pattern, during a process of etching a via on the barrier layer, monitoring in real time existing transmittance values of the film layer, and, monitoring, via variations between the existing transmittance values and the reference transmittance value, degrees of etching of the film layer, thus preventing over-etching. The apparatus comprises several light sources (3) and light-sensitive probes (4). The light sources (3) illuminate towards the film layer on a substrate. The light-sensitive probes (4) are used for sensing the transmittance of the film layer.

MULTI-SHIFT THROMBOLYTIC DEVICE AND CONTROL METHOD THEREOF

A multi-shift thrombolytic device, comprising: a CPU control unit (160), a key control unit (150), a programmable logic control unit (FPGA) (120), a display unit (100), a power amplification unit (110), an impedance matching circuit (140), a thrombolytic probe (170), a current and voltage detector (180) and a power source unit (130); the key control unit (150) issues an instruction signal, and transmits the instruction signal to the CPU control unit (160); the CPU control unit (160) analyzes and processes the instruction signal; the programmable logic control unit (120) receives the processed and analyzed instruction signal to generate a first pulse stimulation signal; the display unit (100) displays an ultrasonic wave frequency signal, a sound pressure signal and a pulse width signal; the power amplification unit (110) amplifies the first pulse stimulation signal, and generates a second pulse stimulation signal; and the thrombolytic probe (170) converts the second pulse stimulation signal ...

THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE

The present invention relates to the technical field of displaying. Provided are a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which do not cause damages to an active layer (12) when a through-hole (16) is respectively formed above a source area (120) and a drain area (121) by using a through-hole etching process. The thin film transistor (1) comprises a substrate (10), the active layer (12) provided on the substrate (10), a gate insulating layer (13), a gate (14) and an interlayer insulating layer (17), and further comprises a conductive etching stop layer (15) provided on the active layer (12). The position of the conductive etching stop layer (15) corresponds to the source area (120) and the drain area (121) of the active layer (12), the through-hole (16) is respectively formed above the source area (120) and the drain area (121) of the active layer (12), and the through-hole (16) does not extend out of the edge of the conductive ...

THIN FILM TRANSISTOR AND FABRICATION METHOD THEREFOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE

A thin film transistor and a fabrication method therefor, a display substrate and a display device, belonging to the field of display technology. The thin film transistor comprises a gate electrode, a source electrode, a drain electrode and an active layer (7), and the steps for forming the active layer (7) comprise: forming a pattern of a thermal insulation layer (5); forming a pattern of an amorphous silicon layer (6) on the thermal insulation layer (5), the pattern of the amorphous silicon layer (6) comprising a first part positioned on the thermal insulation layer (5) and a second part reaching outside of the thermal insulation layer (5); and processing the pattern of the amorphous silicon layer (6) by using a laser annealing process, so that the amorphous silicon layer (6) develops crystal grains along a direction from the second part to the first part so as to form the active layer (7) composed of polysilicon. Thus, the polysilicon active layer (7) having large grain size and good ...

投光灯（大四喜）

堵头（数码管超声波）

Automobile -used headlight of far and near light

... 为解决现有车用头灯内部的设计结构复杂，零件数量较多，占用空间较大的问题，本实用新型提供了一种远近光车用头灯。其包括遮光罩、灯板和一体式透镜；所述遮光罩前端开口，所述一体式透镜安装在所述遮光罩的前端开口处，所述灯板安装在所述遮光罩内；所述灯板上包括近光LED光源和远光LED光源；所述一体式透镜包括入射面和出射面，所述入射面和出射面形成有近光凸透镜单元和远光凸透镜单元；所述近光凸透镜单元与所述近光LED光源相对应，所述远光凸透镜单元与所述远光LED光源相对应。本实用新型公开的远近光车用头灯，其结构更简约紧凑，成本更低；同时能够减少车用头灯的安装空间，设计人员有更大的设计自由度。 ...

Thin film transistor and manufacturing method thereof, display substrate and display device

A thin film transistor, a manufacturing method thereof, a display substrate, and a display device, the thin film transistor being disposed on a substrate (10), the thin film transistor comprising: a first active layer (11) disposed on one side of the substrate (10); the first grid electrode (12) is arranged on one side, far away from the substrate (10), of the first active layer (11); the first insulating layer (13) is arranged on one side, far away from the substrate (10), of the first grid electrode (12); the source electrode and the drain electrode (14) are arranged on one side, far away from the substrate (10), of the first insulating layer (13), and the source electrode and the drain electrode (14) are electrically connected with the first active layer (11); wherein the first grid electrode (12) comprises a laminated structure, and the laminated structure comprises a first conductive layer (121); the first barrier layer (122) is arranged on one side, far away from the substrate (10 ...

Unmanned collaborative unloading and transferring operation method

The invention discloses an unmanned cooperative grain unloading and transferring operation method, belongs to the technical field of agricultural machinery autonomous operation, provides a cooperative grain unloading and transferring scheme, provides a more feasible and practical solution at the present stage while ensuring efficient harvesting, and provides an unmanned grain unloading and transferring mode. The problem that the operation time of transferring and unloading of a traditional harvester is wasted is effectively solved, the waiting time for field unloading after the harvester is full of grains due to insufficient transport capacity of a grain transport vehicle is effectively solved, uninterrupted operation of the harvester is further guaranteed, the comprehensive operation efficiency of the unmanned harvester is improved to a great extent, and the labor intensity of workers is reduced. Compared with a traditional manned grain transport vehicle for unloading grains, manual participation ...

WIRING STRUCTURE, DISPLAY SUBSTRATE AND DISPLAY APPARATUS

A wiring structure, a display substrate and a display apparatus. The wiring structure comprises a plurality of hollow pattern strings, each hollow pattern string comprising a plurality of hollow patterns sequentially arranged along the length extension direction of the wiring structure, each hollow pattern comprising a hollow area and a non-hollow area. The non-hollow area of any hollow pattern in one hollow pattern string at least partially overlaps with the non-hollow area of a hollow pattern in another adjacent hollow pattern string. The hollow areas of the hollow patterns in the plurality of hollow pattern strings do not overlap. The wiring structure is suitable for flexible displaying.

NANOCRYSTAL, MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

A nanocrystal, manufacturing method, and semiconductor device. The nanocrystal comprises S central structure units located at a center portion, and N surrounding structure units located outside of the center portion. The central structure units and surrounding structure units are quantum-dot structure units. The central structure units are a graded-composition alloy structure having an increasing energy level width from an inner side to an outer side in a radial direction. The N surrounding structure units consists of M first surrounding structure units and (N-M) second surrounding structure units, the M first surrounding structure units are a uniform composition structure having a consistent energy level width in the radial direction, and the second surrounding structure units are a graded-composition alloy structure having an increasing energy level width from the inner side to the outer side in the radial direction. At least one of the first surrounding structure units is located between ...

QUANTUM DOT COMPOSITE MATERIAL, PREPARATION METHOD, AND SEMICONDUCTOR DEVICE

A quantum dot composite material, a preparation method, and a semiconductor device. The method comprises the steps of: synthesizing a first compound at a predetermined position; synthesizing a second compound on the surface of the first compound, the first compound and the second compound having the same or different alloy ingredients; and forming a quantum dot composite material by means of cation exchange reaction between the first compound and the second compound, one or more of blueshift, redshift, and non-change occurring in a light-emitting peak wavelength of the quantum dot composite material. A quantum dot is precisely controlled to grow layer by layer using a quantum dot SILAR synthesis method and a gradient component transition shell is formed using a quantum dot one-step synthesis method. The quantum dot composite material prepared using the method above achieves higher light emission efficiency, and can also better meet the requirements of a semiconductor device and a corresponding ...

Lattice column supporting system applied to construction of plank road and bridge

The invention relates to the technical field of supporting systems, and discloses a latticed column supporting system applied to trestle road and bridge construction, the latticed column supporting system is arranged on a rock layer and comprises a plurality of vertical upright rods, a plurality of transverse rods and a plurality of longitudinal upright rods, the transverse rods are connected with the vertical upright rods, connecting positions between the transverse rods and the vertical upright rods form connecting positions, and the longitudinal upright rods are connected with the transverse rods. The pile foundation is provided with a plurality of connecting positions, the longitudinal vertical rods penetrate through the connecting positions and are connected with the vertical vertical rods and the transverse rods correspondingly, the vertical vertical rods, the longitudinal vertical rods and the transverse rods form a latticed column supporting system surrounding the periphery of the ...

MANUFACTURING METHOD FOR ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE

A manufacturing method for an array substrate, an array substrate and a display device. The manufacturing method for an array substrate comprises: forming a first conductive thin film (100) above an underlayment substrate (1); and conducting patterning processing on the first conductive thin film (100), forming a pattern of a negative electrode (11) above a first region (11) of the underlayment substrate (1), and forming a pattern of a gate electrode (4) above a second region (12) of the underlayment substrate (1). A negative electrode layer of a light-emitting diode and a gate electrode layer of a thin-film transistor are simultaneously formed in different regions of an underlayment substrate through one patterning process, so that the complexity and processing time of the manufacturing process of an array substrate can be reduced, thereby simplifying the manufacturing process for an organic electroluminescent panel and reducing manufacturing costs.

WIRING STRUCTURE, DISPLAY SUBSTRATE AND DISPLAY APPARATUS

Provided are a wiring structure, a display substrate and a display apparatus, belonging to the technical field of displaying. The wiring structure comprises a plurality of sequentially connected hollow patterns (1), each hollow pattern (1) comprising a first conductive portion (11) provided with a first pattern and a second conductive portion (12) provided with a second pattern, the first conductive portion (11) and the second conductive portion (12) being connected to one another and having different shapes. The wiring structure comprises the plurality of sequentially connected hollow patterns (1), and the first conductive portion (11) and the second conductive portion (12) in each hollow pattern (1) have different shapes, so that even if a conductive portion having one shape is broken during bending, stretching or twisting of the wiring structure, the conductive portion having the other shape can still ensure good conductivity of the wiring structure. The wiring structure significantly ...

FLEXIBLE BASE SUBSTRATE AND PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE

Provided are a flexible base substrate and a preparation method therefor, and a display device. The flexible base substrate comprises a first flexible base. The first flexible base comprises: a first flexible film layer, which comprises a flexible film layer body, and a plurality of protrusions arranged at intervals on a side surface of the flexible film layer body; a first spacing layer, which is arranged on the first flexible film layer and comprises a plurality of first islands arranged at intervals; and a first groove arranged between adjacent first islands. The first groove is filled with a first organic material, and in a direction perpendicular to the flexible film layer body, the height of the first organic material is less than that of the first grove. Each protrusion positionally corresponds to one first island in the direction perpendicular to the flexible film layer body, and orthographic projections of a gap between adjacent protrusions and a gap between adjacent first islands ...

FLEXIBLE DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

A flexible display panel and a manufacturing method therefor, and a display device. The flexible display panel comprises: a flexible substrate (101), and an inorganic insulating layer (102) and an organic insulating layer (103) provided on the flexible substrate (101). The inorganic insulating layer (102) forms a groove (100) in a quasi-bent region (b) of the flexible display panel. The organic insulating layer (103) covers at least the surface of the groove (100), and the bending capability of the organic insulating layer (103) is greater than that of the inorganic insulating layer (102).

PREPARATION METHOD FOR ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE

A preparation method for an array substrate, an array substrate and a display device. The preparation method for an array substrate comprises steps of forming a thin-film transistor and a storage capacitor on a substrate (1). The thin-film transistor comprises a gate electrode (5), a source electrode (331a) and a drain electrode (332a); and the storage capacitor comprises a first pole plate (61) and a second pole plate (62), wherein doped ions are implanted into an amorphous silicon layer (3) formed on the substrate (1) through one time ion implantation technology, crystallization is performed on an amorphous silicon material forming the amorphous silicon layer (3) through a laser irradiation technology, and the doped ions are activated while the source electrode (331a), the drain electrode (332a) and the first pole plate (61) are arranged on the same layer. The process steps and process costs are greatly saved, so that it is easy to realize the large-scale mass production of low-temperature ...

POLYSILICON SURFACE PROCESSING METHOD AND SUBSTRATE SURFACE PROCESSING METHOD

A polysilicon surface processing method and a substrate surface processing method. The polysilicon surface processing method comprises: forming a material thin film (20) on a polysilicon surface (10); and processing the polysilicon surface (10) formed with the material thin film (20) by using a chemical-mechanical polishing process, wherein the material thin film (20) is selected such that polysilicon is removed first during polishing. Roughness of the polysilicon surface processed according to the method in the embodiments can be lower than 6 nm.

OLED DISPLAY PANEL AND DISPLAY DEVICE

Provided are an OLED display panel and a display device, an image sensor (300) is added below an OLED light emitting device (200), a light shielding layer (400) having at least one pinhole imaging region (410) is added between the image sensor (300) and the OLED light emitting device (200), the pinhole imaging region (410), which corresponds to a gap between the OLED light emitting devices (200) and is arranged with signal wiring and a light shielding component in a control device in a staggered manner, in the light shielding layer (400) is used to image, on the image sensor (300), an object located above the OLED display panel, and the fingerprint recognition function is realised in the display region of the OLED display panel, thereby reducing an accompanying region of the whole display device, and realising a frameless design.

Acidic micro-etching liquid for copper alloy surface and preparation method of acidic micro-etching liquid

The invention discloses an acidic micro-etching solution for a copper alloy surface. The micro-etching solution comprises the following components in parts by mass: 80-140 parts of a nitrate mixture; 40-80 parts of a synergistic corrosion inhibitor; 10-30 parts of a stabilizer; 10 to 20 parts of a brightener; 5-15 parts of a wetting agent; 2-8 parts of a water-soluble polymer; 5-20 parts of an acidity regulator; 1-10 parts of a smoke suppressant; the invention further provides a preparation method of the acidic micro-etching liquid for the copper alloy surface. According to the method, the roughening micro-etching liquid with nitrate as the main component is adopted, uniform and high-quality etching can be carried out on the surface of the copper alloy, the etching rate is more uniform and controllable, the ideal roughened surface can be obtained, and the required effect can be regulated and controlled according to actual requirements or standards; for the surface of the copper alloy, a ...

Driving backboard, manufacturing method thereof and display device

The invention discloses a driving backboard, a manufacturing method thereof and a display device, and the driving backboard comprises a substrate and a TFT. A source electrode of the TFT is connected with a first polycrystalline silicon region in the active layer, and a drain electrode of the TFT is connected with a second polycrystalline silicon region in the active layer. The source electrode and the drain electrode can be in good contact with the polycrystalline silicon region, so that the switching speed of the TFT on the source electrode and the drain electrode can be effectively improved, and the driving backboard can resist high voltage and has high response speed.

MAGNETIC TRACK BRAKE CONTROL SYSTEM AND METHOD, AND MAGLEV TRAIN

A magnetic track brake control system, comprising an acquisition device, a brake control device and a brake converter. The acquisition device is used for acquiring a brake state parameter, and sending the brake state parameter to the brake control device. The brake control device is used for receiving the brake state parameter sent by the acquisition device, generating a brake control instruction according to the brake state parameter, and sending the brake control instruction to the brake converter. The brake converter is used for receiving the brake control instruction sent by the brake control device, and controlling, according to the brake control instruction, the excitation current value applied to both ends of a brake electromagnet. By controlling the input current of the magnetic track brake, the electromagnetic attraction is adjustable.

ARRAY SUBSTRATE, FABRICATION METHOD THEREFOR AND DISPLAY PANEL

An array substrate, comprising: a base substrate (11); an active layer (12) located on the base substrate (11); a first gate insulating layer (13) located on the active layer (12); a first gate electrode (14) located on the first gate insulating layer (13); and a second gate insulating layer (15) located on the first gate electrode (14). The second gate insulating layer (15) comprises a first sub-insulating layer (151) and second sub-insulating layer (152) that are arranged in a direction far from the active layer (12), and the hydrogen content of the first sub-insulating layer (151) is greater than the hydrogen content of the second sub-insulating layer (152). Further provided are a fabrication method for the array substrate, and a display panel comprising the array substrate.

Test method, test device, test equipment, storage medium and system

The embodiment of the invention discloses a test method, a test device, test equipment, a storage medium and a system. The method comprises the following steps: acquiring a to-be-tested case scene; determining a signaling model number and a protocol parameter based on a to-be-tested case scene; calling a target signaling model corresponding to the signaling model number in the instrument equipment, and transmitting the protocol parameter to the target signaling model to control the instrument equipment to generate a target test script; and testing the to-be-tested case scene based on the target test script to obtain a test result corresponding to the to-be-tested case scene. Therefore, the script development efficiency can be improved, the simulation of the signaling parameter level can be realized, and the simulation precision is improved; and meanwhile, the test execution efficiency can be improved as the test script does not need to be manually selected.

TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

A TFT array substrate and manufacturing method therefor, and a display device comprising the TFT array substrate. The TFT array substrate comprises a substrate base (100) and two thin film transistors located on the substrate base, each thin film transistor comprising an active layer (102, 107) having a source region and a drain region. The two active layers of the two thin film transistors are mutually stacked in the direction perpendicular to the substrate base, and the drain region of one of the two active layers is electrically connected with the source region of the other active layer, so that the two thin film transistors are connected in series. In this way, the present invention can reduce or save the area occupied by each thin film transistor on a base while maintaining a total effective channel length unchanged, thereby facilitating a high resolution design of a display panel.

DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises a plurality of pixel units, each pixel unit comprising a light emitting layer and a pixel defining layer surrounding the light emitting layer. The pixel defining layer comprises a first area (A1) and a second area (A2). The first area (A1) has a first thickness and the second area (A2) has a second thickness. The first thickness is greater than the second thickness. Therefore, evaporation of light emitting materials of multiple colors can be completed without requiring a fine metal mask, ensuring a relatively high evaporation precision while maintaining a relatively low production cost.

POLYSILICON THIN-FILM TRANSISTOR, ARRAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE

Provided are a polysilicon thin-film transistor, an array substrate, a manufacturing method therefor and a display device. The manufacturing method for the polysilicon thin-film transistor comprises: forming a polysilicon active layer (2); successively forming a first gate insulation layer (3) and a first gate (4) on the active layer (2), wherein the projection of the first gate (4) is located in two end margins of the active layer (2); primarily injecting ions into the active layer (2) by adopting the first gate (4) as a mask, and forming two doped areas (8) at two sides of the active layer (2) respectively; successively forming a second gate insulation layer (5) and a second gate (9) on the first gate insulation layer (3) and the first gate (4), wherein the projections of two end margins of the second gate (9) are respectively located between the projection of the first gate (4) and two end margins of the active layer (2); and secondarily injecting ions into the active layer (2) by adopting ...

ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

A manufacturing method of an array substrate comprises the following steps: sequentially forming a semiconductor pattern (2), a gate electrode (4) and a first insulation pattern (5) in different layers on a substrate (1). An orthographic projection of the semiconductor pattern on the substrate covers an orthographic projection of the first insulation pattern on the substrate, and an orthographic projection of the first insulation pattern on the substrate covers an orthographic projection of the gate electrode on the substrate. The first insulation pattern and the gate electrode are a mask, the semiconductor pattern is processed by a single-pass ion implantation process to form an active layer (2C), a heavily doped source region (2A) and a lightly doped source region (2B), a heavily doped drain region (2D) and a lightly doped drain region (2E). Lightly and heavily doped source and drain electrodes are respectively formed by only the single-pass ion implantation process. Since there is a ...

Device and method for preparing high-purity quartz sand from quartz stone

The invention discloses a device and method for preparing high-purity quartz sand from quartzite, the device comprises a crushing and calcining box, a cleaning and impurity removing box, a grinding box, a flotation machine, a magnetic separator and a conveying belt which are arranged in sequence, a controllable valve plate is arranged in the crushing and calcining box, a crushing cavity is formed above the controllable valve plate, a calcining cavity is formed below the controllable valve plate, and the conveying belt is arranged in the crushing and calcining box. A plurality of stages of crushing roller sets are arranged in the crushing cavity from top to bottom, the rotating directions of the adjacent crushing rollers in each stage of crushing roller set are opposite, the distance between the adjacent crushing rollers in each stage of crushing roller set is gradually reduced from top to bottom, the conveying belt transversely penetrates through the calcining cavity, and a heating pipe ...

THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE

A thin-film transistor, manufacturing method thereof and array substrate. The thin-film transistor comprises an active layer (2) disposed on a substrate (1), and the active layer (2) comprises a middle channel region (21), a first high-resistance region (22) and a second high-resistance region (23) respectively disposed at outer sides of the middle channel region, a source region (24) disposed at an outer side of the first high-resistance region and a drain region (25) disposed at an outer side of the second high-resistance region, wherein a base material of the active layer is monocrystalline diamond. The thin-film transistor, manufacturing method thereof and array substrate reduce carrier mobility by disposing the high-resistance regions at the outer sides of the middle channel of the active layer, thus effectively reducing a leakage current of a thin-film transistor of monocrystalline diamond.

Self-enhanced electrochemical luminescence compound and application thereof

The invention discloses a self-enhancement type electrochemiluminescence-based compound and application thereof. The compound is prepared by the following steps: constructing a porous structure framework by using tetrahydroxy phenyl zinc porphyrin, a fluorinated carbon chain and carboxyl-polyethylene glycol-biotin, and embedding perfluoro-15 crown-5 ether with high oxygen carrying capacity into pores, thereby obtaining the self-enhancement type electrochemiluminescence-based compound. The fluorinated carbon chain can be perfluorosuccinic acid, perfluoroglutaric acid, perfluoroadipic acid, perfluorooctanedioic acid, perfluorooctanedioic acid or perfluorooctanedioic acid, so that compounds with different pore sizes can be constructed. By comparing electrochemical luminescence signals of the six substances, the electrochemical luminescence intensity of the compound prepared from the perfluorosebacic acid is maximum. Therefore, by utilizing the affinity between the streptavidin and the biotin ...

Method for inoculating hypsizygus marmoreus

The invention provides a hypsizygus marmoreus inoculation method which comprises the steps that inoculation fungus bags are placed in a feeding box in a stacking mode, the inoculation fungus bags enter limiting grooves under the action of gravity, follow-up inoculation fungus bags can extrude the inoculation fungus bags just entering the limiting grooves, the limiting grooves with the inoculation fungus bags are rotated to the topmost portion through a driving motor, and then the inoculation fungus bags enter the limiting grooves; the inoculator is driven by a hydraulic cylinder to advance, a needle head penetrates through a through hole in a positioning plate to be inserted into an inoculation fungus bag, when the inoculator advances, the hydraulic cylinder can drive a driving plate to move, the driving plate drives a material pushing piston to move through an elastic rod, strain liquid in a strain box is sucked into an inoculation needle tube, and the driving plate is driven by the hydraulic ...

QLED DEVICE AND PREPARATION METHOD THEREFOR

A quantum dot light-emitting diode (QLED) device and a preparation method therefor, comprising a substrate (11), a reflective anode (12), a hole transport layer (14), a quantum dot light-emitting layer (15), an electronic transport layer (16) and a transparent cathode (17) that are sequentially laminated. The quantum dot light-emitting layer is prepared using a quantum dot material having a quantum well energy level structure, and the quantum dot material comprises at least one quantum dot structural unit which is arranged in sequence in a radial direction; the quantum dot structural unit is a graded alloy component structure whose energy level width changes in the radial direction or is a uniform component structure whose energy level width is consistent in the radial direction. The present invention may achieve a high-efficiency QLED device having excellent capabilities such as high-efficiency charge injection, high light-emitting brightness, low driving power supply and high device efficiency ...

LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND MANUFACTURING METHOD, ARRAY SUBSTRATE AND DISPLAY DEVICE

A low temperature poly-silicon thin film transistor and a manufacturing method, an array substrate and a display device. The manufacturing method for the low temperature poly-silicon thin film transistor comprises: S1: sequentially forming an active layer (3), a gate electrode insulating layer (4), a gate electrode (5) and an interlayer insulating layer (6) on an underlayer substrate (1); S2: forming a first metal thin film layer (8); S3: performing hydrogenation processing on the active layer (3) and the gate electrode insulating layer (4); and S4: forming a second metal thin film layer (7), wherein the second metal thin film layer (7) is used for forming a source electrode and a drain electrode.

ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, DISPLAY PANEL AND DISPLAY DEVICE

Disclosed are an array substrate (20) having a display area (A) and a manufacturing method therefor, a display panel and a display device. The array substrate (20) having a display area (A) comprises a substrate (201) and a thin film transistor structure located on the surface of the substrate (201). The thin film transistor structure is located in the display area (A), and at least comprises a source/drain electrode pattern (205) and a planarized pattern (204) which are located on the side of the thin film transistor structure away from the substrate (201). The surface of the planarized pattern (204) surface away from the substrate (201) is substantially located on a same plane with the surface of the source/drain electrode pattern (205) away from the substrate (201). The planarized pattern (204) has first slots (H1), and the source/drain electrode pattern (205) is accommodated in the first slots (H1).

Method for constructing circular RNA (Ribonucleic Acid) by using improved I-type intron ribozyme sequence and application of improved I-type intron ribozyme sequence

The invention discloses a method for constructing circular RNA (Ribonucleic Acid) by using an improved I-type intron ribozyme sequence and application of the improved I-type intron ribozyme sequence. The invention provides an I-type intron ribozyme sequence skeleton fragment, which is characterized in that on the basis of an anabaena I-type intron sequence, a coxsackie virus internal ribosome entry site CVB3IRES sequence is split to simulate E1 and E2 sequences, and the I-type intron ribozyme sequence skeleton fragment with a self-splicing characteristic is obtained. According to the invention, a mode for solving the problem of in-vitro synthesis of circRNA by introducing redundant sequences is creatively provided by utilizing an I-type intron ribozyme sequence based on Anabaena tRNA for the first time, a sequence design mode is optimized, and on the premise of not influencing ring formation, the structural components of the sequence are simplified, and a key ring formation sequence is ...

Mushroom cultivation method based on microbial technology

The invention belongs to the technical field of microbial culture, and particularly relates to a mushroom cultivation method based on a microbial technology. The method comprises the following steps: (1) preparing a substrate containing algae microorganisms, inoculating shiitake mushrooms on the substrate, and sealing to form shiitake mushroom bags after the inoculation is completed; (2) putting the mushroom fungus bag in a microclimate condition formed by weak blue light and medium environment humidity, and culturing until the matrix becomes white; (3) blue light is converted into high-light-intensity yellow light, the environment humidity is increased to a high-humidity condition to form a microclimate condition, and cultivation is continued until sporocarp is formed; and 4) reducing the humidity of the microclimate condition in the step 3), continuing to cultivate and harvest the mushroom after maturity. The mushroom-algae symbiotic system is constructed through algae microorganisms, ...

DISPLAY PANEL AND DISPLAY DEVICE

Provided are a display panel and a display device. The display panel has a display region. The display panel comprises: a base substrate; a drive circuit and at least one signal line positioned at the base substrate; and at least one insulating layer positioned between the drive circuit and the at least one signal line, wherein the drive circuit is positioned at a periphery of the display region, and an orthographic projection of the at least one signal line on the base substrate overlaps with an orthographic projection of the drive circuit on the base substrate to form an overlapped region.

ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR, FINGERPRINT RECOGNITION METHOD, AND DISPLAY DEVICE

An array substrate and a preparation method therefor, a fingerprint recognition method, and a display device, comprising: a base substrate (11), a plurality of pixel units (01) and a plurality of fingerprint recognition units (02) located within a display region of the base substrate (11); a fingerprint recognition unit (02) comprises: a light-shielding layer (21) and a photosensitive image sensor (23) that are located on the base substrate (11); the light-shielding layer (21) is provided with a through hole (22) which is used to achieve small-aperture imaging; the orthographic projection of the through hole (22) on the base substrate (11) does not overlap with the orthographic projection of a pixel unit (01) on the base substrate (11); the photosensitive image sensor (23) is used to receive an image of a fingerprint formed by means of the through hole (22).

POLYSILICON THIN-FILM TRANSISTOR, ARRAY SUBSTRATE, MANUFACTURING METHOD AND DISPLAY DEVICE

Provided are a polysilicon thin-film transistor, an array substrate, a manufacturing method therefor and a display device. The manufacturing method for the polysilicon thin-film transistor comprises: forming a polysilicon active layer (2); successively forming a first gate insulation layer (3) and a first gate (4) on the active layer (2), wherein the projection of the first gate (4) is located in two end margins of the active layer (2); primarily injecting ions into the active layer (2) by adopting the first gate (4) as a mask, and forming two doped areas (8) at two sides of the active layer (2) respectively; successively forming a second gate insulation layer (5) and a second gate (9) on the first gate insulation layer (3) and the first gate (4), wherein the projections of two end margins of the second gate (9) are respectively located between the projection of the first gate (4) and two end margins of the active layer (2); and secondarily injecting ions into the active layer (2) by adopting ...

FLEXIBLE DISPLAY PANEL AND DISPLAY DEVICE

A flexible display panel has a display region, a peripheral region surrounding the display region, and a bendable region. The flexible display panel comprises: multiple electrically-conductive layers arranged within the display region; and at least one interdigital capacitor provided in an overlapping region between the bendable region and the periphery region. The at least one interdigital capacitor and at least one of the multiple electrically-conductive layers are arranged in the same layer and made of the same material.

ARRAY SUBSTRATE AND MANUFACTURING METHOD AND PERFORMANCE IMPROVEMENT METHOD THEREFOR, DISPLAY PANEL, AND DISPLAY DEVICE

An array substrate and manufacturing method and performance improvement method therefor, a display panel, and a display device. The array substrate comprises: a substrate base (10); a shielding layer (20) provided on one surface of the substrate base (10); a thin film transistor (30) provided on the substrate base (10) and covering the shielding layer (20); and a compensation layer (40) provided on the side of the thin film transistor (30) away from the substrate base (10).

APPLICATION OF MICROBUBBLE ON MANUFACTURING MEDICATION FOR PREVENTING NEW VESSELS IN TUMOR FROM GROWING BY COMBING WITH ULTRASOUND TO PRODUCE HIGH INTENSITY CAVITATION

An application of microbubble on manufacturing a medication for preventing new vessels in tumor from growing is disclosed. The microbubble is capable of generating high intensity cavitation effect under the action of pulsed ultrasonic energy with high peak negative pressure, which causes the new vessels in tumor embolized and the microcirculation in tumor is therefore cut off. The ultrasonic energy has higher peak acoustic pressure and lower emission duty ratio.

POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE

A polycrystalline silicon thin-film transistor, a manufacturing method therefor, and a display device. The polycrystalline silicon thin-film transistor comprises: a substrate (1), an insulation layer (8) formed on the substrate (1), a polysilicon active layer (2) formed on the substrate (1) and the insulation layer (8), and two source/drain ion-implanted regions formed on either side of the active layer (2), where the edges of the insulation layer (8) at either end are within the edges of the active layer (2) at either end. In the polycrystalline silicon thin-film transistor and the manufacturing method therefor provided, the grain size of the active layer is increased, the grain uniformity of a channel region thereof is increased, characteristic degradation of the active layer due to exposure to a backlight is effectively prevented, and component reliability is increased.

Titanium alloy penetration fusion welding method for special vehicle

According to the titanium alloy penetration fusion welding method for the special vehicle, full-penetration high-energy beam welding of welding seams with different thicknesses and joint forms outside a titanium alloy vehicle body for a large special vehicle can be achieved, the structural quality is improved, and the welding production efficiency is improved; the problems that when a titanium alloy vehicle body for a large complex special vehicle with the plate thickness of 6-20 mm is welded through a common TIG welding method, multi-layer and multi-pass welding is needed, the welding speed is low, the cladding efficiency is low, inter-pass welding defects occur, welding deformation occurs, and residual stress is large are solved. The method has the advantages of being high in welding speed, high in production efficiency, low in cost, small in joint residual stress and deformation, good in mechanical property and the like, the titanium alloy thick plate welding process control and related ...

QUANTUM DOT MATERIAL, PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

Disclosed are a quantum dot material, a preparation method therefor, and a semiconductor device. The quantum dot material comprises N quantum dot structure units arranged in a radial direction in sequence, wherein N is greater than or equal to 1. The quantum dot structure units are gradually-varied alloy component structures with energy level width becoming larger from inside out in the radial direction, and the energy level widths of adjacent quantum dot structure units are continuous. The present invention provides a novel quantum dot material having alloy components gradually varying from inside out in the radial direction. The novel quantum dot material not only achieves higher luminous efficiency of quantum dot materials, but also satisfies requirements of a semiconductor device and a corresponding display technology for comprehensive performance of the quantum dot materials, and is an ideal quantum dot light-emitting material applicable to the semiconductor device and the display ...

LOW-TEMPERATURE POLYCRYSTALLINE SILICON FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS

The present invention belongs to the field of manufacturing process of a film transistor, and provides a low-temperature polycrystalline silicon film transistor array substrate, a manufacturing method thereof, and a display apparatus. The low-temperature polycrystalline silicon film transistor array substrate comprises contact holes (180, 181). A source (170) and a drain (171) of the array substrate are connected to an active layer (13) through the contact holes (180, 181). Conductive patterns (120, 121) connected to the active layer (13) are disposed at the bottom of the contact holes (180, 181). When etching of the contact holes (180, 181) is completed, the source (170) and the drain (171) of the array substrate can form a good ohmic contact with the active layer (13), thereby ensuring display quality of the display apparatus.

FLEXIBLE DISPLAY PANEL AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

A flexible display panel, a display device having the same, and a method of manufacturing a flexible display panel. The flexible display panel comprises: a flexible base (100) comprising a plurality of stretchable cylindrical members (110) arranged in an array, every two adjacent stretchable cylindrical members (110) being connected at sides thereof; and a flexible component conformally disposed at the flexible base (100).

FLEXIBLE DISPLAY PANEL, DISPLAY DEVICE AND MANUFACTURING METHOD

A flexible display panel, a display device and a manufacturing method. A hollowing pattern (500) is provided in a lead wire (300) in a bending area (400) between a display area (100) and a binding area of the flexible display panel. The provided hollowing pattern (500) can relieve a stress accumulated on the lead wire (300) during the bending process and help the lead wire (300) to release the stress during bending, so as to prevent the lead wire (300) from breaking, thereby improving the quality and reliability of the flexible display panel.

DISPLAY SUBSTRATE AND DISPLAY APPARATUS

The present invention belongs to the technical field of display, and provides a display substrate and a display apparatus. The display substrate provided by the present invention has a plurality of island areas, bridge areas, and clearance areas. The display substrate comprises: at least one substrate, the substrate comprising a sub-substrate and a buffer layer, wherein the sub-substrate comprises a first surface and a second surface that are opposite each other; and the buffer layer is disposed on the side of the second surface of the sub-substrate that faces away from the first surface. In the at least one substrate, the sub-substrate of any substrate faces the same direction, wherein the position, corresponding to the island areas, on the buffer layer of the at least one substrate is provided with at least one first opening.

Battery cover snatchs mechanism

... 本实用新型电池盖抓取机构，包括气缸固定板、安装在所述气缸固定板上的气缸、与所述气缸连接的气缸连接块、安装在所述气缸连接块上的压紧块，所述气缸固定板还连接有吸盘固定板，所述吸盘固定板上设有吸盘。本实用新型通过吸盘对电池盖进行抓取，同时由气缸驱动的压紧块对卡扣进行拆卸，二者同时进行，提升机构工作效率。 ...

Terahertz near-field ghost imaging system based on adjustable terahertz array source

The invention discloses a terahertz near-field ghost imaging system based on an adjustable terahertz array source, and the system comprises a femtosecond laser, a first collecting lens which is disposed behind the femtosecond laser and is used for converting infrared light generated by the femtosecond laser into parallel light; the adjustable terahertz array source is arranged behind the first collecting lens; the imaging target is arranged behind the terahertz source, and the distance between the imaging target and the terahertz source is within 300 microns; the baffle plate is arranged behind the imaging target and is used for filtering extra infrared light; the second collecting lens is arranged behind the baffle plate; and the single-pixel terahertz detector is arranged behind the second collecting lens. Therefore, the single pixel of the terahertz array source is compiled based on the adjustable terahertz array source, and the spatially distributed terahertz light can be obtained by ...

ALLOY NANOMATERIAL, PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

An alloy nanomaterial, a preparation method therefor, and a semiconductor device. The alloy nanomaterial comprises N alloy nanostructured units arranged in sequence in a radial direction, wherein N is larger than or equal to 2. The alloy nanostructured units comprise type A1 and type A2. Type A1 is a gradient alloy component structure in which the energy level width increases from inside out in the radial direction, and type A2 is a gradient alloy component structure in which the energy level width decreases from inside out in the radial direction. In the alloy nanomaterial, the distribution of the alloy nanostructured units is: the alloy nanostructured units of type A1 and the alloy nanostructured units of type A2 are alternately distributed, and the energy levels of adjacent alloy nanostructured units are continuous. The alloy nanomaterial not only achieves higher luminous efficiency, but also satisfies comprehensive performance requirements of a QLED device and a corresponding display ...

COASTLINE CHANGE IDENTIFICATION METHOD BASED ON MULTIPLE FACTORS

A coastline change identification method based on multiple factors. A coastline change, a NDVI, and subsidence evolution are used as variable influence factors along with time; in combination with a substitution method of multiple variables, modeling is performed on the problems related to a complex environment system, and inaccurate and subjective concepts are eliminated; the potential of utilizing remote sensing data in geographic information is fully mined; and complex behaviors of local dynamics are displayed, so that useful and substantive information is added to comprehensive management of environmental problems and coastal zones.

METHOD FOR TRAIN SUSPENSION CONTROL BY MEANS OF MULTIPLE AIR SPRINGS, SYSTEM FOR TRAIN SUSPENSION CONTROL BY MEANS OF MULTIPLE AIR SPRINGS, AND TRAIN

Provided is a method for train suspension control by means of multiple air springs, the method comprising: receiving a vehicle load pressure (S101); and controlling height adjustment valves according to the vehicle load pressure to adjust the pressure of a first air spring set, a second air spring set and/or a third air spring set (S102). Three height adjustment valves are provided, and the three height adjustment valves form a triangular structure. Each of the first air spring set, the second air spring set and the third air spring set comprises a plurality of individual air springs, and all the individual air springs in each of the air spring sets are correspondingly connected to the same height adjustment valve. A system for train suspension control by means of multiple air springs and a train are further provided. The train load pressure is distributed more rationally so as to improve the performance of a train adapting to the curve of a track.

WIRING STRUCTURE, DISPLAY SUBSTRATE AND DISPLAY APPARATUS

Provided are a wiring structure, a display substrate and a display apparatus. The wiring structure comprises a plurality of hollow patterns (10), and two edges (11) extending along the length extension direction of the wiring structure are both straight lines. The wiring structure is provided with the plurality of hollow patterns, so that when the wiring structure is bent, stretched or twisted, stress relief may be performed via the hollow patterns, so as to prevent the wiring structure, the display substrate and the display apparatus from breaking and causing device failure on the substrate provided with the wiring structure. The wiring structure significantly increases flexible substrate yields in particular, since flexible substrates are by nature easy to bend.

Transform-based lightweight pruning method and device, terminal and computer readable storage medium

The invention provides a Transform-based lightweight pruning method and device, a terminal and a computer readable storage medium. The method comprises the following steps: training a model by using a sparse regular mode; the method comprises the following steps of: firstly, carrying out sparse penalty training on coefficients, enhancing the sparsity of a channel, carrying out regularization on the coefficients, optimizing by adding a training target, carrying out sparse penalty training to obtain some transformers with important values close to zero, and sorting all regularization coefficients in the transformers; a threshold value tau is obtained according to a predefined pruning rate, and after pruning is carried out according to imporsion scores, the total pruned transformer is subjected to fine adjustment so as to reduce the reduction of precision; pruning operation is applied to all MHSA blocks of the model subjected to sparse training, and unimportant networks with low scores are ...

External pre-stress damping device for floor beam and construction method of external pre-stress damping device

The invention discloses a floor beam external pre-stress damping device and a construction method thereof.The floor beam external pre-stress damping device is characterized in that U-shaped steel is fixedly arranged on an anchor bolt in the middle of a floor beam, a bearing plate is arranged below the U-shaped steel, and the bearing plate is connected with the U-shaped steel through a connecting assembly; the damper is arranged between the bearing plate and the bottom plate of the U-shaped steel, the semicircular steering block is arranged below the bearing plate, the arc-shaped face of the semicircular steering block abuts against the steel cable, prestress is applied by tensioning the steel cable, the connecting assembly applies upward acting force to the floor beam, effective damping of the floor is increased, and the bearing capacity of the floor is improved; meanwhile, the damper is additionally arranged between the bearing plate and the U-shaped steel, the vibration acceleration and ...

METHOD FOR INCREASING QUANTUM DOT INK UTILIZATION RATE

A method for increasing the quantum dot ink utilization rate, comprising steps of: A. adding two types of same-color quantum dots with a fluorescence emission wavelength difference of 2N nm into a solvent, to prepare quantum dot inks with the same concentration; B, measuring the fluorescence relative intensities of the two prepared quantum dot inks, and calculating a difference between the fluorescence relative intensities of the two quantum dot inks; C, mixing the two quantum dot inks according to a volume ratio of 1:1 and stirring when the absolute value of the difference is less than or equal to 5, to obtain a quantum dot ink with a required fluorescence emission wavelength.

Treatment method and treatment system for polysulfonate drilling fluid rock debris waste liquid

The invention provides a treatment method and a treatment system for polysulfonate drilling fluid rock debris waste liquid. The treatment method of the polysulfonate drilling fluid rock debris waste liquid comprises the following steps: adding rock debris into water, uniformly stirring, adding a nonionic gel breaking flocculant aqueous solution, uniformly stirring, and carrying out first filter pressing to obtain first filter pressing liquid; adjusting the pH value of the first pressure filtration liquid to 4-6, adding a cationic gel breaking flocculant aqueous solution, uniformly stirring, and carrying out second pressure filtration to obtain a second pressure filtration liquid; adding a chelating agent into the second-time pressure filtration liquid, uniformly stirring, and carrying out third-time pressure filtration to obtain a third-time pressure filtration liquid; the method has the beneficial effects that the cationic gel breaking flocculant and the nonionic gel breaking flocculant ...

ARRAY SUBSTRATE MANUFACTURING METHOD, ARRAY SUBSTRATE AND DISPLAY DEVICE

An array substrate manufacturing method, an array substrate and a display device. The array substrate manufacturing method comprises: forming patterns of an active layer (40), a gate insulation layer (60), a gate and a gate line (7) on a substrate (1) through a patterning process; forming a passivation layer (11) on the substrate (1) where the active layer (40), the gate insulation layer (60), the gate and the gate line (7) are formed, and forming a via hole in the passivation layer (11) through a patterning process; and forming through a patterning process patterns of a data line, a source (9), a drain (10) and a pixel electrode (12) on the substrate (1) where the passivation layer (11) is formed, the drain (10) being in contact with the active layer (40) through the via hole.

DISPLAY APPARATUS AND MANUFACTURING METHOD THEREFOR

A display apparatus and a manufacturing method therefor. The display apparatus comprises: a flexible substrate (100), comprising a display portion (101) and a back bend portion (102), wherein the display portion (101) is connected to the back bend portion (102), the display portion (101) comprises a display side (S01) and a back side (S02) opposite the display side (S01), and the back bend portion (102) is located on the back side (S02) of the display portion (101); and an antenna (1021) located on the back bend portion (102). In the display apparatus, the antenna (1021) is integrated on the back bend portion (102) of the flexible substrate (100), so that a narrow frame can be realized, and the display apparatus can be less constrained by area, and can also be better connected with the outside, thereby facilitating cost reduction and lightening and thinning the display apparatus itself.

WIRING STRUCTURE, DISPLAY SUBSTRATE AND DISPLAY APPARATUS

A wiring structure, a display substrate and a display apparatus. The wiring structure comprises a plurality of hollow units (1) connected in series, each hollow unit (1) comprising a hollow area (11) and a non-hollow area (10). The non-hollow areas (10) of any two adjacent hollow units (1) at least partially overlap, and the hollow areas (11) do not overlap. Stress relief may be performed via the hollow areas (11) of the hollow units (1) during bending, stretching or twisting, so as to prevent the wiring structure from breaking and causing device failure on a substrate provided with the wiring structure. The area of the connection position between two hollow units (1) is large, so as to effectively prevent the connection position of the two hollow units (1) from breaking, thereby ensuring the wiring structure yield.

MANUFACTURING METHOD OF FLEXIBLE DISPLAY DEVICE, FLEXIBLE DISPLAY DEVICE, AND DISPLAY APPARATUS

Provided are a manufacturing method of a flexible display device, a flexible display device, and a display apparatus. The manufacturing method comprises: forming a metal lead (202) at a flexible substrate (201); bending the flexible substrate (201) and the metal lead (202); and forming an electrically-conductive film layer (203) at the metal lead (202), the electrically-conductive film layer (203) at least partially covering a bent portion of the metal lead (202).

POLYCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD, TFT AND MANUFACTURING METHOD, AND DISPLAY PANEL

Provided are a polycrystalline silicon film and a manufacturing method, a TFT and a manufacturing method, and a display panel. The manufacturing method for the polycrystalline silicon film comprises: forming a polycrystalline silicon layer (3); treating the surface of the polycrystalline silicon layer (3) to allow the surface of the polycrystalline silicon layer (3) to be electronegative; and introducing a polar gas into a process cavity, and adsorbing polar molecules (4) in the polar gas on the surface of the polycrystalline silicon layer (3) which is electronegative, in order to obtain the polycrystalline silicon film with a hole density larger than an electron density on the surface. An upward electric field is formed on the surface of the polycrystalline silicon film, so as to accumulate holes (5) on the surface of the polycrystalline silicon film, stable hole conductive channels are formed on the surface of the polycrystalline silicon film, and since the migration speed of the holes ...

ARRAY SUBSTRATE AND FABRICATION METHOD THEREFOR, DISPLAY DEVICE

An array substrate and a fabrication method therefor, and a display device. The array substrate comprises: a substrate (10); a polysilicon thin film transistor disposed on the substrate (10), wherein the polysilicon thin film transistor comprises an active layer (70), and the active layer (70) comprises a source region (701), a drain region (702) and a channel region (703) located between the source region (701) and the drain region (702); a metal light-shielding layer (20) disposed between the substrate (10) and the active layer (70). An orthographic projection of the metal light-shielding layer (20) on the substrate (10) completely covers an orthographic projection of the channel region (703) on the substrate (10); moreover, the orthographic projection of the metal light-shielding layer (20) on the substrate (10) at least partially covers orthographic projections of both the source region (701) and part of the drain region (702) on the substrate (10). The present invention is to be applied ...

ULTRASONIC DEVELOPING CATHETER

An ultrasonic developing catheter, comprising a hollow tube body (1), wherein the tube body (1) is a medical soft catheter, high-molecular material fiber yarns (5) are arranged in the wall of the tube body (1), and the high-molecular material fiber yarns (5) are mutually crossed and overlapped to form a netted woven mesh layer, so that ultrasonic developing areas of different densities are formed between the tube body (1) and the woven mesh layer. Due to the structure, the catheter is simple in structure, wide in application range, and capable of decreasing the manufacturing cost, improving the ultrasonic developing capacity and facilitating the developing at the tip of the catheter.

Preparation method of display panel, display panel and display device

The invention provides a preparation method of a display panel, the display panel and a display device. The preparation method of the display panel comprises the following steps: forming a display function layer on the surface of a substrate; a plurality of first electrodes distributed at intervals are formed on the side, away from the substrate, of the display function layer. A plurality of corresponding photoelectric conversion layers are formed on the side, away from the display function layer, of the first electrode. A plurality of corresponding second electrodes are formed on the side, away from the first electrode, of the photoelectric conversion layer, and the polarity of the second electrodes is opposite to that of the first electrode. And forming conductive connecting components among the plurality of second electrodes, so that the second electrodes are connected in series. And voltage is loaded on the second electrodes, so that a current short circuit is formed between the second ...

Titanium alloy resistant to high-temperature nitric acid corrosion and preparation method thereof

The invention relates to a high-temperature nitric acid corrosion resistant titanium alloy and a preparation method thereof, and belongs to the field of spent fuel post-treatment materials, and the alloy comprises the following elements by mass percent: 0.02-0.08 wt.% of palladium, 0-7 wt.% of aluminum, and the balance of titanium and inevitable impurities. The titanium alloy with stable corrosion resistance in a spent fuel post-treatment nitric acid solution is prepared by controlling the addition of a high-corrosion-resistance noble metal Pd element and a low-cost Al element, so that the application cost is reduced, and the technical difficulty of considering the corrosion resistance and the application cost of the existing titanium alloy for spent fuel post-treatment is solved. In addition, the invention further provides a preparation method of the titanium alloy resistant to high-temperature nitric acid corrosion. The high-temperature nitric acid corrosion resistant titanium alloy is ...

Open-loop control method suitable for water pump valve joint control water filling system

The invention discloses an open-loop control method suitable for a water pump valve joint control water filling system. The method comprises the following steps: setting initial parameters of the water pump valve joint control water filling system; basic parameters of the water pump valve joint control water filling system are obtained; setting initial boundary conditions of the water pump valve joint control water filling system; according to initial parameters, basic parameters and initial boundary conditions of the water pump valve joint control water filling system, and calculating a flow regulating valve opening degree action curve, a water level process change curve of a water filling object, a flow change curve of the water pump valve joint control water filling system and a movement track of a water pump working point of the water pump valve joint control water filling system in a water filling process for open-loop control of the water pump valve joint control water filling system ...

Therapeutic application of fluorocarbon phase change particles to tissue damage caused by local ultrasonic excitation vaporization and cavitation

The invention relates to a novel application of fluorocarbon phase change particles as a therapeutic ablating agent for mechanically destroying or ablating diseased tissues. After the fluorocarbon phase change particles make contact with the diseased tissue, under excitation of low-frequency focused ultrasound, gas-liquid phase change (namely vaporization) and ultrasonic cavitation resonance of vaporized microbubbles are generated, then intensity-controllable cavitation and mechanical damage of local tissue are generated, and therefore the ablation treatment effect on the diseased tissue is achieved. The vaporized fluorocarbon phase change microbubbles become ideal exogenous cavitation nuclei, and can significantly reduce the cavitation threshold and induce and enhance the inertial cavitation effect. The method has the characteristics of short treatment time, low required ultrasonic sound pressure and sound intensity, small damage to tissues outside a target region, convenience in operation ...

ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR, AND DISPLAY DEVICE

The present invention provides an array substrate and a preparation method therefor, and a display device, for improving the performance and yield of a display product. Embodiments of the present invention provide an array substrate, which is divided into a display area and a circumferential area outside the display area; the array substrate comprises: a substrate, an electroluminescent device positioned in the display area and on the substrate, a packaging layer configured to package the electroluminescent device, and a touch control function layer positioned on the packaging layer; the touch control function layer comprises a touch control lead extending from the display area to the circumferential area; the array substrate further comprises a thickness compensation layer disposed in the circumferential layer and positioned between the substrate and the touch control lead layer.

QUANTUM DOT INK AND PREPARATION METHOD THEREFOR

A quantum dot ink, comprising the following components in percentage by weight: 0.01-40.0% of quantum dot, the quantum dot comprising at least one quantum dot structure unit arranged in a radial direction in sequence, and the quantum dot structure unit being a gradually-varied alloy component structure with energy level width varying in the radial direction or a uniform component structure with energy level width being consistent in the radial direction; and 60.0-99.99% of solvent, the solvent comprising at least one organic solvent. A preparation method for the quantum dot ink comprises: dispersing quantum dots in the solvent according to a formula and stirring for 20-40 minutes.

LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM, THIN FILM TRANSISTOR AND RESPECTIVE PREPARATION METHOD AND DISPLAY DEVICE

Provided are a low-temperature polycrystalline silicon thin film, a thin film transistor and a preparation method and a display device. The preparation method for the low-temperature polycrystalline silicon thin film comprises: forming an amorphous silicon thin film above a substrate; and performing laser annealing on the amorphous silicon thin film by using a mask plate (10) so as to form the low-temperature polycrystalline silicon thin film (21); wherein the mask plate comprises a light transmitting region (Q1) and a light blocking region (Q2) surrounding the light transmitting region, and two side edges of the light blocking region adjacent to the light transmitting region are in concave-convex shapes.

Display substrate and display panel

The invention provides a display substrate, and belongs to the technical field of display. The display substrate comprises a substrate body, a plurality of light-emitting devices arranged on the substrate body and a reference voltage line for providing reference voltage for the light-emitting devices. The light-emitting device comprises a first electrode, a light-emitting function layer and a second electrode which are sequentially arranged in the direction away from the substrate. The second electrode is electrically connected with a reference voltage line; the display substrate comprises at least one light-emitting functional layer, and the light-emitting functional layer comprises a light-emitting functional layer which is located between a first electrode and a second electrode of a light-emitting device and used for emitting light, and a redundant light-emitting functional layer located on the side, away from a substrate, of a reference voltage line. The light-emitting functional layer ...

CAR-T cell constructed by novel circular RNA (Ribonucleic Acid) cyclization sequence and application of CAR-T cell in treatment of small cell lung cancer

The invention discloses a CAR-T cell constructed by a novel circular RNA (Ribonucleic Acid) cyclization sequence and application of the CAR-T cell to treatment of small cell lung cancer. The invention provides a method for preparing a DLL3-CAR-T cell. The method comprises the following steps: 1) preparing a circular RNA (Ribonucleic Acid) with a DLL3-CAR structure; (2) the DLL3 circular RNA is entrapped in a lipid material, and LNP entrapped with DLL3circRNA is obtained; and (3) transfecting the LNP entrapped with the DLL3 circRNA into a T cell, so as to obtain the DLL3-CAR-T cell. Experiments prove that the invention provides a novel RNA (Ribonucleic Acid) cyclization sequence and a preparation method for constructing a CAR-T (Chimeric Antigen Receptor-T) cell, and the CAR-T targeting a DLL3 target is constructed by utilizing the method, so that an innovative and effective treatment technology is expected to be provided for SCLC treatment, and a revolutionary breakthrough is brought to ...

METHODS OF MANUFACTURING POLYSILICON THIN FILM, POLYSILICON THIN FILM TRANSISTOR AND ARRAY SUBSTRATE

Methods of manufacturing a polysilicon thin film, a polysilicon thin film transistor and an array substrate are provided. The method of manufacturing a polysilicon thin film comprises: forming an amorphous silicon thin film (301) on a substrate (10); treating the surface of the amorphous silicon thin film (301) with a nickel salt solution such that said solution evenly coats said surface; and, using an excimer laser annealing process to treat the amorphous silicon thin film (301) so as to crystallize said amorphous silicon thin film (301) into a polysilicon thin film (302). The polysilicon crystal manufactured by means of said method is homogeneous and has a large grain size, improving the electrical properties of the polysilicon thin film and of a low-temperature polysilicon thin film transistor, and improving the quality of the substrate.

HYDRAULIC SUPPORT SYSTEM FOR MAGNETIC LEVITATION TRAIN AND MAGNETIC LEVITATION TRAIN

A hydraulic support system for a magnetic levitation train and the magnetic levitation train, the system comprising hydraulic support devices (1), a control panel and a hydraulic station, wherein the hydraulic station is fixed to the bottom of the train, and each of four corners of a bogie of the magnetic levitation train is provided thereon with a hydraulic support device (1); the control panel controls the relative position between the hydraulic support devices (1) and a track plane by means of the hydraulic station, and the hydraulic station feeds back the positional state of the hydraulic support devices (1) to the control panel. The described magnetic levitation train comprises at least one train car, the at least one train car is provided with a bogie, and each of the four corners of the bogie is provided thereon with the described hydraulic support device (1).

Straw scattering breadth adjusting system and method

The invention relates to a straw scattering breadth adjusting system and method. The target straw scattering breadth and the actual straw scattering breadth are obtained through a camera and an industrial computer, and the straw scattering breadth is adjusted on line in real time based on a comparison result, so it is guaranteed that chopped straw is evenly scattered on the earth surface, and compared with a manual guide plate adjusting installation mode, the adjustment precision is more accurate; and meanwhile, according to the corresponding relation among the output voltage of a pull rope sensor, the stroke of a direct-current electric push rod motor, the angle of a flow guide plate in the spreading plate horizontal double-adjusting mechanism and the straw spreading breadth, the theoretical straw spreading breadth of the adjusted straw spreading plate horizontal double-adjusting mechanism is calculated, and real-time feedback and closed-loop control of breadth adjustment are realized.

QUANTUM-DOT FILM, AND MANUFACTURING METHOD THEREOF

A quantum-dot film, and manufacturing method thereof. The quantum-dot film comprises, in percent by weight, the following components : 0.01-40.0% of quantum dots, wherein the quantum dots comprise one or more quantum dot structure units sequentially arranged in a radial direction, and the quantum dot structure units are a graded-composition alloy structure having a varied energy level width in the radial direction or a uniform composition structure having a consistent energy level width in the radial direction; and 60.0-99.99% of a dispersion medium for the quantum dots. A semiconductor device manufactured by using the quantum-dot film of the present invention has superior optical and electrical device properties, etc.

Dye preparation device

The invention discloses a dye preparation device, which improves the stirring efficiency and reduces the color difference between prepared dye and required dye. The dye preparation device comprises a cylinder body, a pipe body and a gas source, and the pipe body and the gas source are both located on the outer side of the cylinder body; the bottom end of the pipe body is connected and communicated with the outer wall of the cylinder body; wherein the pipe body comprises an outer pipe and an inner pipe which are connected with each other, the outer pipe comprises a first pipe part and a second pipe part, the bottom of the first pipe part is fixedly connected with the top of the second pipe part, the bottom of the second pipe part is fixedly connected with the barrel body, and the inner pipe is located on the upper portion of an inner cavity of the first pipe part; an air channel is formed between the inner pipe and the outer pipe, and the air source is connected with the air channel.

USE OF MICROBUBBLE COMBINED WITH ULTRASONIC CAVITATION IN LIVER TRAUMA HEMOSTASIS

Provided is a hemostatic use of a microbubble combined with ultrasonic cavitation which is mainly used for hemostasis after bleeding following abdominal solid organ injury. Driven by a characteristic pulsed ultrasound, a microbubble ultrasound contrast agent in the circulation of blood produces ultrasonic cavitation with a certain intensity, destroys the blood capillaries in the local tissues, forms acute lesions around the bleeding blood vessels, hematoma and thrombus etc., compresses and blocks localized liver blood circulation, and succeeds in producing a hemostatic and therapeutic effect on the bleeding after liver trauma. The microbubble enters the human blood circulatory system by intravenous injection; the peak negative pressure of the pulse emitted by ultrasound is 1-9 MPa, and the pulse width is more than 20 cycles, with a low duty ratio and low sound intensity; the treatment produces high-intensity ultrasonic cavitation in the microvascular lumina of the liver, produces a strong ...

一种秸秆抛撒幅宽调节系统及方法

... 本发明涉及一种秸秆抛撒幅宽调节系统及方法，通过摄像头和工业计算机获得目标秸秆抛撒幅宽和实际秸秆抛撒幅宽，基于比较结果在线实时调节秸秆抛撒幅宽，从而保证切碎后的秸秆均匀抛撒在地表，较人工手动调节导向板安装方式，调节精度更准确；同时根据拉绳传感器的输出电压、直流电动推杆电机的行程、撒布板水平双调节机构中的导流板的角度和秸秆抛撒幅宽之间的对应关系，计算调节后的秸秆撒布板水平双调节机构的理论秸秆抛撒幅宽，实现了幅宽调节的实时反馈和闭环控制。 ...

Train reference speed calculation method, electronic equipment and rail train

The invention is suitable for the technical field of railway vehicles, and provides a train reference speed calculation method, electronic equipment and a railway train, the method comprises the following steps: obtaining a first wheel set speed of each wheel set under any control unit of the train in the current period; according to the second wheel set speed of each wheel set in the previous two periods and the first wheel set speed of each wheel set in the current period, the second wheel set speed of each wheel set in the current period is determined; determining a first reference speed corresponding to the control unit in the period according to the second wheel set speed of each wheel set in the period and the operation condition of the train; and determining a second reference speed corresponding to the control unit in the current period according to the first reference speed corresponding to the control unit in the current period, the second reference speed corresponding to the ...

Display substrate, manufacturing method thereof and display device

The embodiment of the invention provides a display substrate, a manufacturing method thereof and a display device, relates to the technical field of display, and is used for improving the water and oxygen blocking capacity of the display substrate, prolonging the service life of a light-emitting device and improving the reliability of the light-emitting device. The display substrate comprises a back plate, a first barrier layer arranged on the back plate and a packaging layer arranged on the first barrier layer. The first barrier layer is formed by an atomic layer deposition process. The packaging layer comprises a first inorganic layer arranged on the first barrier layer, and the first inorganic layer is formed through a chemical vapor deposition process; on the plane where the backboard is located, the orthographic projection of the first barrier layer coincides with the orthographic projection of the first inorganic layer. The display substrate and the display device are used for displaying ...

LOW-TEMPERATURE POLY-SILICON TFT ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS

A low-temperature poly-silicon TFT array substrate, a manufacturing method therefor, and a display apparatus. The manufacturing method comprises: forming a poly-silicon active layer (4) and a poly-silicon storage capacitor lower electrode plate (3) on a substrate (1) at the same time by using a step type photoresist process and a one-time photolithography process; forming a gate insulation layer (6) on the poly-silicon active layer (4) and the poly-silicon storage capacitor lower electrode plate (3); forming a metal layer on the gate insulation layer (6), and etching the metal layer to form a gate (7) and a gate line (7a) connected to the gate (7), a source (9), a drain (10) and a data line (9b) connected to the source (9) and the drain (10); forming a passivation layer (11), a photoresist layer and a pixel electrode layer (12) in sequence, performing patterning process treatment on the passivation layer (11), the photoresist layer and the pixel electrode layer (12), and forming patterns ...

Display panel, manufacturing method thereof and display device

The invention discloses a display panel, a manufacturing method thereof and a display device, which are used for solving the problem that the contact area of an auxiliary electrode and a cathode is too small, the display panel comprises a driving back plate, a flat layer and a pixel defining layer, and the pixel defining layer is provided with a plurality of opening areas; the flat layer and the pixel defining layer are provided with a plurality of through holes penetrating through the thickness directions of the flat layer and the pixel defining layer, and the through holes of the flat layer coincide with the through holes of the pixel defining layer in the same area corresponding to the driving backboard; the driving back plate, the flat layer and the pixel defining layer form a groove at the position of the through hole, and the orthographic projection of the groove on the driving back plate is located in an area defined by the orthographic projection of at least two adjacent opening ...

QUANTUM DOT MATERIAL, PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE

Disclosed are a quantum dot material, a preparation method therefor, and a semiconductor device. The quantum dot material comprises at least one quantum dot structure unit arranged in a radial direction in sequence. The quantum dot structure unit is a gradually-varied alloy component structure with energy level width varying in the radial direction or a uniform component structure with energy level width being consistent in the radial direction. A novel quantum dot material provided in the present invention not only achieves higher luminous efficiency of quantum dot materials, but also satisfies requirements of a semiconductor device and a corresponding display technology for comprehensive performance of the quantum dot materials, and is an ideal quantum dot light-emitting material applicable to the semiconductor device and the display technology.

White copper-clad plate for LED and preparation method of white copper-clad plate

The invention belongs to the technical field of copper-clad plates, and particularly relates to a white copper-clad plate for an LED (light-emitting diode) and a preparation method thereof, the white copper-clad plate comprises the following raw material components: 40-60 parts of resin, 3-7 parts of curing agent, 0.05-0.10 part of catalyst, 90-11 parts of filler and 180-200 parts of solvent; the resin comprises bisphenol A type novorac resin, and the filler comprises aluminum hydroxide and/or titanium dioxide. According to the glue solution component of the copper-clad plate, bisphenol A type novorac resin is used as main body resin, the crosslinking density of a cured product is high, Tg is correspondingly improved, heat resistance and chemical resistance are correspondingly improved, the copper-clad plate has high reflectivity and improved luminous efficiency while the resin proportion and thermoset are increased by adding BT resin, and then the service life of a product is prolonged ...

METHOD AND USE FOR CONSTRUCTING MONKEY MODEL COMPOUNDING DEFICIENCY SYNDROME OF TRADITIONAL CHINESE MEDICINE AND AIDS

ARRAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, DISPLAY DEVICE, THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

An array substrate, a manufacturing method therefor, a display device, a thin film transistor and a manufacturing method therefor. The manufacturing method for the array substrate comprises: an active material layer (501), a gate insulating layer (204) and a metal thin film (502) are formed on a base substrate (201), and a pattern comprising an active layer (203) and a pattern comprising a gate (205), a source (206), a drain (207), a gate line (1063) and a data line (1061) are formed via a first patterning process; a passivation layer (301) is formed on the base substrate (201), and a source contact hole (302), a drain contact hole (303) and a cross-bridge structure contact hole (1062a) are formed via a second patterning process; a transparent conductive thin film (1401) is formed on the base substrate (201), and a portion of the transparent conductive thin film (1401) is removed so as to form a source contact portion (401), a drain contact portion (402), a pixel electrode (403) and a cross-bridge ...

MICRO RAIL VEHICLE AND ELECTROMAGNETIC BRAKE THEREOF

A micro rail vehicle and an electromagnetic brake (1) thereof, belonging to the technical field of rail traffic. The electromagnetic brake (1) comprises a magnetic yoke (11), an armature (12), a brake disc (13), a fixed disc (14), a quick release mechanism, and an operating mechanism connected to the quick release mechanism. The quick release mechanism is configured to drive the armature (12) to move toward the yoke (11), so that the brake disc (13) and the armature (12) can be quickly separated and a gap is formed therebetween, thereby quickly releasing the braking state of the electromagnetic brake (1). The operating mechanism is configured to control operation of the quick release mechanism. The electromagnetic brake (1) has the advantage of being suitable for a micro rail vehicle and capable of quickly releasing the electromagnetic brake (1).

ARRAY SUBSTRATE, MANUFACTURING METHOD, AND DISPLAY APPARATUS

Provided are an array substrate, a manufacturing method, and a display apparatus. The array substrate comprises a substrate (1), and a thin film transistor and a storage capacitor both formed on the substrate (1). The thin film transistor comprises a gate (34), a source (31), a drain (32), and a gate insulation layer (4) disposed among the source (31), the drain (32) and the gate (34). The storage capacitor comprises a first electrode plate (61), a second electrode plate (62), and a dielectric layer disposed between the first electrode plate (61) and the second electrode plate (62). The dielectric constant of a portion, closely adjacent to the source (31) and the drain (32), of the gate insulation layer (4), is smaller than that of the dielectric layer. Although the thickness of the dielectric layer of the storage capacitor in the array substrate is small, the capacity of the storage capacitor is high, the size of the storage capacitor is greatly reduced and the size of a pixel structure ...

Positioning turnover mechanism

... 本实用新型定位翻转机构，包括底座、安装在所述底座上的翻转机构、第定位台和第二定位台，所述第定位台和所述第二定位台关于所述翻转机构的翻转轴线左右对称，当所述翻转机构带动产品翻转180°时，所述产品的位置在所述第定位台和所述第二定位台之间切换。本实用新型通过采用第定位台和第二定位台，使放料和取料为两个位置，通过错开位置，避免干涉，保证效率；采用齿条、齿轮配合，增大力矩，减少传统的直接使用翻转气缸时气压不稳定影响；实现产品的二次定位、翻转错位，便于下站吸附提取。 ...

DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE

In one embodiment, provided is a display substrate, comprising: a base substrate, a light shielding layer formed on the base substrate and having a plurality of light shielding units, and a plurality of polysilicon layers formed on one side, away from the base substrate, of the plurality of light shielding units, wherein the light shielding units have different sizes, so that energy light reflected and/or refracted by the plurality of light shielding units having different sizes respectively generate different heat energy distributions on the plurality of polysilicon layers corresponding to the plurality of light shielding units, thereby causing the plurality of polysilicon layers to have different crystal forms. Moreover, further provided are a manufacturing method of the display substrate, and a display device comprising the aforementioned display substrate.

ORGANIC LIGHT-EMITTING DIODE DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY APPARATUS

Disclosed are an organic light-emitting diode display substrate and a manufacturing method therefor. The manufacturing method comprises: (101) successively forming a first electrode, a light-emitting layer and a second electrode on a base substrate; (102) forming a protection layer provided with a first aperture at one side of the second electrode away from the base substrate; and (103) forming a second aperture in the second electrode, wherein the second aperture is located below the first aperture. Under the protection of a protection layer, only a part below a first aperture of a second electrode is removed, so as to prevent other parts of the second electrode from being damaged, thereby reducing the poor display of a display apparatus.

DISPLAY PANEL, ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR

An array substrate, the array substrate comprising a back plane (1), a wiring layer (2), a protective layer (3) and a connection layer (4); the back plane (1) comprises a display region (A) and a bonding region (C); the wiring layer (2) is disposed above the back plane (1), and the wiring layer (2) located in the bonding region (C) is exposed; the protective layer (3) is disposed at the side of the wiring layer (2) away from the back plane (1) and covers the wiring layer (2) located in the display region (A) and the bonding region (C), and the protective layer (3) located in the bonding region (C) is provided thereon with through holes (33); the connection layer (4) is disposed at the side of the protective layer (3) away from the back plane (1), and the connection layer (4) is connected to the wiring layer (2) by means of the through holes (33).

THIN-FILM, MANUFACTURING METHOD THERFOR, AND LIGHT-EMITTING DISPLAY COMPONENT

A thin-film, a manufacturing method therefor, and a light-emitting display component, comprising: a first film layer (11) formed on a substrate (10) and a second film layer (12) formed between the first film layer (11) and the substrate (10) and in direct contact with the first film layer (11), where contacting surfaces (121) of the second film layer (12) and the first film layer (11) undergo an activation treatment. Because the contacting surfaces (121) of the second film layer (12) and the first film layer (11) undergo the activation treatment, surface energy is increased, as such, the first film layer (11) formed on such basis is provided with increased compactness, and the probability of producing micropores is reduced.