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Применить Всего найдено 3. Отображено 3.
13-08-2021 дата публикации

THREE-DIMENSIONAL STACKING STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер: CN113257800A
Автор: CHEN MINGFA, YE SONGFENG, LIU CHUNHONG, SHI CHAOWEN, 陈明发, 叶松峯, 刘醇鸿, 史朝文
Принадлежит:

A stacking structure includes a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.

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Номер записи: 1
27-06-2023 дата публикации

Method of forming package

Номер: CN116344509A
Автор: HU ZHIJIA, YE SONGFENG, CHEN MINGFA
Принадлежит:

A method of forming a package includes bonding a first plurality of active dies to a second plurality of active dies in a wafer. A second plurality of active dies is in the interior region of the wafer. The first plurality of dummy dies is bonded to a second plurality of dummy dies in the wafer. The second plurality of dummy dies is in a peripheral region of the wafer, and the peripheral region surrounds the inner region. In accordance with other embodiments of the present application, other methods of forming a package are also provided.

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Номер записи: 2
08-08-2023 дата публикации

Integrated circuit package and method of forming same

Номер: CN116564945A
Автор: YE DEQIANG, YE SONGFENG, HONG JIANWEI
Принадлежит:

In an embodiment, an integrated circuit package includes: a first integrated circuit die; a second integrated circuit die bonded to the first integrated circuit die in a facing back manner; a dummy semiconductor component adjacent to the second integrated circuit die and bonded to the first integrated circuit die; a support substrate attached to the dummy semiconductor component and the second integrated circuit die; and a passivation layer extending along a top surface of the support substrate, an outer sidewall of the dummy semiconductor feature, an outer sidewall of the first integrated circuit die, and a top surface of the first integrated circuit die. The embodiment of the invention also provides a method of forming the integrated circuit package.

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Номер записи: 3