VERTICAL LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a vertical light emitting diode (VLED) and a method for manufacturing it. SOLUTION: A reflection layer 212, a transparent conductive layer 208 and a transparent dielectric layer 210 are combined to be used as a structure layer for accelerating uniform current distribution and increasing light extraction efficiency. The transparent conductive layer is formed on a first external surface of a stack of a plurality of group III nitride semiconductor layers, and then the transparent dielectric layer is formed on the opposite side to the multilayer structure of the transparent conductive layer. Then a first electrode structure 219 is formed on the transparent dielectric layer, and electrically brought into contact with the transparent conductive layer via a plurality of contact windows 222 pattern-formed while penetrating the transparent dielectric layer. The transparent conductive layer and the transparent dielectric layer are used as the structure layers for ...

METHOD OF MANUFACTURING VERTICAL TYPE LIGHT-EMITTING DIODE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a vertical type light-emitting diode. SOLUTION: In the method, a multilayered structure of a group-III nitride semiconductor compound is epitaxially deposited on an irregular surface of a substrate. The substrate is then removed to expose an irregular surface of the multilayered structure corresponding to the irregular surface of the substrate. A portion of the exposed irregular surface of the multilayered structure is then etched to form an electrode contact surface for forming an electrode layer. In the method, no specific planarized region is required on the irregular surface of the substrate. As a result, planarization treatment of the substrate is not necessary. The same substrate having an irregular surface can be used for manufacturing vertical type and horizontal type light-emitting diodes. COPYRIGHT: (C)2011,JPO&INPIT ...

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