Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 3. Отображено 3.
13-08-2021 дата публикации

INTEGRATION OF SEMICONDUCTOR DEVICE ASSEMBLIES WITH THERMAL DISSIPATION MECHANISMS

Номер: CN113257748A
Автор: IM SEUNG-WON, KANG DONG-WOOK, JEON O-SEOB, 林承园, 姜东旭, 全五燮
Принадлежит:

The present invention provides an integration of semiconductor device assemblies with thermal dissipation mechanisms. In a general aspect, an electronic device assembly can include a semiconductor device assembly including a ceramic substrate; a patterned metal layer disposed on a first surface of the ceramic substrate; and a semiconductor die disposed on the patterned metal layer. The electronic device assembly can also include a thermal dissipation appliance. Ceramic material of a second surface of the ceramic substrate can be direct-bonded to a surface of the thermal dissipation appliance. The second surface of the ceramic substrate can be opposite the first surface of the ceramic substrate.

Подробнее
Номер записи: 1
14-07-2023 дата публикации

Stray inductance reduction in power semiconductor device modules

Номер: CN116435278A
Автор: JEON OSEOB, IM SEUNG-WON, PAUL RITESH, TISSAYER JEROME
Принадлежит:

The invention relates to stray inductance reduction in a power semiconductor device module. In a general aspect, a module may include a substrate having semiconductor circuitry implemented thereon and a negative power supply terminal electrically coupled with the semiconductor circuitry via the substrate. The negative power supply terminal includes a connection tab arranged in a first plane. The module also includes a first positive power supply terminal and a second positive power supply terminal electrically coupled with the semiconductor circuit via the substrate. The first positive power supply terminal is disposed laterally to the negative power supply terminal and includes a tab disposed in a first plane. The second positive power supply terminal and the negative power supply terminal are disposed laterally and in the first plane such that the negative power supply terminal is disposed between the first positive power supply terminal and the second positive power supply terminal.

Подробнее
Номер записи: 2
11-08-2023 дата публикации

High power module package structure

Номер: CN116581111A
Автор: IM SEUNG-WON, EOM JOO-YANG, YOO IN-PIL, JEON OSEOB
Принадлежит:

The invention relates to a high power module package structure. A method disclosed in an embodiment includes disposing a first direct bond metal (DBM) substrate substantially parallel apart from a second DBM substrate by a distance to enclose a space. The method further includes disposing at least one semiconductor die in the space; and bonding the semiconductor die to the first DBM substrate using a first adhesive layer without an intermediate spacer block between the semiconductor die and the first DBM substrate; and bonding the semiconductor die to the second DBM substrate using a second adhesive without an intermediate spacer block between the semiconductor die and the second DBM substrate.

Подробнее
Номер записи: 3