半導体装置

... 【課題】簡単な構造で確実に封止樹脂と金属面との剥離を抑制できる実装構造を備えた半導体装置を提供する。【解決手段】半導体装置１０１は、半導体素子１０と、絶縁基板２１と第１金属層２２と第２金属層２３とを有する絶縁回路基板２０と、を備える。電気回路を構成しない金属ブロック１の平坦な下面が第１金属層２２に対して平行となるように接合され、第１金属層２２の表面、半導体素子１０の表面、及び金属ブロック１の表面が封止樹脂によって被覆されている。【選択図】図１ ...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To secure long-term reliability in a semiconductor device by increasing the bonding strength of an ultrasonic welding portions between external connection terminals and the wiring patterns of an insulating substrate. SOLUTION: Hardness of bonding ends 18c, 20a of the external connection terminals 18, 20 to be bonded to the wiring patterns of the insulating substrate 14 through the use of an ultrasonic welding tool is not lower than 90 in Vickers hardness. In the external connection terminals 18 in which the bonding ends 18c are provided integrally with bars 18a, the bonding ends 18c located substantially in the lengthwise center of the bar 18a are first bonded, and the other bonding ends are bonded alternately in order toward both ends. The hardness of the bonding ends 18c, 20a is increased so that a strength of ultrasonic welding portions is increased. The external connection terminals 18 including the bonding ends 18c are bonded in the order of increasing distance ...

半導体装置の製造方法