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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 12. Отображено 12.
17-02-2011 дата публикации

METHOD FOR MANUFACTURING AL3BC3 USING A CARBOTHERMAL REDUCTION PROCESS

Номер: KR2011019128A1
Автор: LEE, Sea Hoon, KIM, Hai Doo
Принадлежит:

The present invention relates to a method for manufacturing Al3BC3 using a carbothermal reduction process, and more particularly, to Al3BC3 manufactured from the raw materials of: Al2O3, AlOOH and/or Al(OH)3 from the source of aluminum; B2O3 and/or H3BO3 from the source of boron; and phenol resin and/or carbon black from the source of carbon, at the weight ratio of: aluminum-based compound : boron-based compound : carbon-based compound = 0.7 : 1.3 to 2.0 : 0.4 to 1.5. To obtain high-purity Al3BC3, the synthesis temperature was maintained at the range of 1650°C to 1800°C for 0.5 to 5 hours. According to the present invention, economical manufacture can be achieved due to the elimination of process hazards by replacing highly reactive conventional metal aluminum with aluminum oxide and replacing expensive conventional B4C with boron oxide in the synthesis of Al3BC3. In addition, the manufacturing costs of Al3BC3 can also be reduced as the synthesis temperature can be lowered.

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Номер записи: 1
24-03-2011 дата публикации

MOLD FOR SYNTHESIZING CERAMIC POWDER BY MEANS OF A SPARK PLASMA SINTERING METHOD

Номер: KR2011034269A1
Автор: LEE, Sea Hoon, KIM, Hai Doo, KO, Jae Woong
Принадлежит:

The present invention relates to a mold for synthesizing ceramic powder, and more particularly, to a mold for synthesizing ceramic powder by means of a spark plasma sintering method in a mold system adopting the spark plasma sintering method, wherein said mold comprises: a tubular mold body which contains raw powder for the synthesis of ceramic powder therein; and a pair of mold covers which are brought into contact with an upper portion and a lower portion of the mold body, respectively, thereby preventing the generation of aggregate in the synthesized powder caused by pressure, operating the mold system at a low power level to prevent damage to the mold system, and reducing power consumption during the operation thereof.

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Номер записи: 2
03-09-2018 дата публикации

METHOD FOR MANUFACTURING SILICON NITRIDE SINTERED BODY HAVING HIGH THERMAL CONDUCTIVITY

Номер: KR1020180097987A
Автор: KIM, JIN MYUNG, PARK, YOUNG JO, KIM, HAI DOO, LEE, JAE WOOK, KO, JAE WOONG, KIM, HA NEUL
Принадлежит:

The present invention relates to a method for manufacturing a silicon nitride sintered body having a high thermal conductivity. More specifically, the present invention provides a silicon nitride sintered body comprising: a step (S10) of blending Si, A_2O_3, and B_2O_3 raw material powders based on complete nitration of Si to follow a composition of xSi_3N_4-yA_2O_3-zB_2O_3 wherein x, y, and z are mol%; x, y, and z > 0; and A and B are rare earth metals selected from a group consisting of Y, Sc, Nd, and Yb; a step (S20) of mixing the blended raw material powders; a step (S30) of molding the mixed raw material powders; a step (S40) of nitrifying the molded body; and a step (S50) of sintering the nitrified molding body. The present invention provides the silicon nitride sintered body which is advantageous to exhibit a high thermal conductivity by reducing oxygen amounts within the sintered body, and is excellent in terms of thermal and mechanical properties by controlling sintering conditions ...

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Номер записи: 3
18-07-2016 дата публикации

고열전도율을 갖는 반응소결질화규소의 제조 방법

Номер: KR0101639576B1
Автор: 김해두, 박영조, 김진명, 이재욱, 고재웅, 김하늘
Принадлежит: 한국기계연구원

... 전력 디바이스 등의 방열 구조에 사용하기 적합한 고열전도율을 갖는 반응소결질화규소소결체의 제조 방법이 제공된다. 본 발명은 Si 분말을 포함하는 원료 분말을 1 미크론 이하의 크기로 밀링하는 단계; 상기 밀링된 Si 분말 및 소결 조제를 혼합 및 성형하는 단계; 상기 성형체를 1350~1450oC에서 질화 처리하여 상기 성형체 내에 반응결합 질화규소를 형성하는 단계; 및 상기 반응결합 질화규소를 1850oC 이상의 온도에서 후소결하여반응소결질화규소소결체를 제조하는 단계를 포함하는 반응소결질화규소소결체의 제조 방법을 제공한다. 본 발명에 따르면, 높은 열전도율의 반응소결질화규소소결체를 제공할 수 있게 된다.

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Номер записи: 4
06-11-2015 дата публикации

METHOD FOR PRODUCING REACTION SINTERED SILICON NITRIDE HAVING HIGH THERMAL CONDUCTIVITY

Номер: KR1020150124490A
Автор: KIM, HAI DOO, PARK, YOUNG JO, KIM, JIN MYUNG, LEE, JAE WOOK, KO, JAE WOONG, KIM, HA NEUL
Принадлежит:

Provided is a method for producing reaction sintered silicon nitride having high thermal conductivity and suitable to be used for a heat insulation structure such as an electric device or the like. The present invention provides a method for producing a reaction sintered silicon nitride sintered body, the method comprising the steps of: milling a raw ingredient powder including an Si powder into a size of 1 micron or less; mixing and molding the milled Si powder and a sintering preparation; nitriding the molded product at 1350-1450^oC to form reaction bonded silicon nitride in the molded body; and producing a reaction sintered silicon nitride sintered body by post-sintering the reaction bonded silicon nitride at a temperature of 1850^oC or more. According to the present invention, a reaction sintered silicon nitride sintered body having high thermal conductivity can be provided. COPYRIGHT KIPO 2016 ...

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Номер записи: 5
08-06-2017 дата публикации

METHOD FOR MANUFACTURING SINTERED BODY OF SILICON NITRIDE WITH HIGH THERMAL CONDUCTIVITY

Номер: KR1020170063223A
Автор: KIM, HAI DOO, LEE, JAE WOOK, KIM, HA NEUL, PARK, YOUNG JO, KIM, JIN MYUNG, KO, JAE WOONG
Принадлежит:

Disclosed is a method for manufacturing a sintered body of silicon nitride with high thermal conductivity. The present invention provides a method for manufacturing a sintered body of silicon nitride comprising the following steps: preparing raw material powder, comprising oxide of at least two kinds of rare earth metal selected from the group consisting of silicon nitride, Y, Sc, Nd, and Yb, in accordance with a mixing formula represented by xSi_3N_4-yA_2O_3-zB_2O_3, wherein x, y, and z are mol%, and each of x, y, z are more than 0, and A and B are independently selected rare earth metal; mixing the mixed raw material powder; molding the mixed raw material powder; and sintering the molded body. According to the present invention, the sintered body of silicon nitride having high thermal conductivity and a grain boundary phase can be manufactured. COPYRIGHT KIPO 2017 ...

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Номер записи: 6
17-07-2018 дата публикации

METHOD OF PRODUCING REACTION-BONDED SILICON NITRIDE

Номер: KR1020180081642A
Автор: LEE, SEUNG JUN, BAEK, SEUNG SU, PARK, JIN WOO, KIM, HAI DOO, KO, JAE WOONG, PARK, YOUNG JO, KIM, HA NEUL, KIM, JIN MYUNG
Принадлежит:

The present invention relates to a method of rapidly producing silicon nitride by using an ytterbium (Yb)-based additive in the production of a reaction-bonded silicon nitride through nitridation from a silicon (Si) raw material powder. More specifically, the method of rapidly producing reaction-bonded silicon nitride comprises the steps of: uniformly mixing the Si raw material powder with the Yb-based additive to prepare a mixed raw material; forming the mixed raw material into a formed body; and putting the formed body into a furnace, and then heating the formed body at a predetermined rate under a controlled atmosphere, thereby performing nitridation at a predetermined reaction temperature. According to the present invention, the method can produce the reaction-bonded silicon nitride by enabling the Yb-based additive to react with a silicon dioxide film and a silicon nitride film which interfere with a contact between the surface of the Si raw material powder and nitrogen, and exposing ...

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Номер записи: 7
24-06-2016 дата публикации

Yttria Based Conductive Plasma-resistant Member And Methods Thereof

Номер: KR0101633035B1
Автор: 김해두, 이재욱, 김하늘, 김진명, 박영조, 고재웅
Принадлежит: 한국기계연구원

... 이트륨 산화물을 포함하는 전기 전도성 내플라즈마 부재가 개시된다. 본 발명에서 상기 내플라즈마 부재는 이트륨 산화물로 구성되는 기지상과, Ti, Zr 및 Hf으로 이루어진 그룹 중에서 선택되는 최소한 1종의 금속의 카바이드 또는 나이트라이드를 포함하는 분산상으로 구성된다. 본 발명에 따르면, 본 발명에 따르면, 반도체급의 이트리아 복합체를 제공할 수 있어, 포커스 링과 같은 전기전도성을 요하는 내플라즈마 부재로 사용 가능하다.

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Номер записи: 8
18-04-2016 дата публикации

MANUFACTURING METHOD OF REACTION SINTERED SILICON NITRIDE HAVING HIGH THERMAL CONDUCTIVITY

Номер: KR1020160041865A
Автор: KIM, HAI DOO, PARK, YOUNG JO, KIM, JIN MYUNG, LEE, JAE WOOK, KO, JAE WOONG, KIM, HA NEUL
Принадлежит:

Provided is a manufacturing method of reaction sintered silicon nitride having high thermal conductivity which is proper to be used to a heat protection structure of a powered device, or the like. The manufacturing method of reaction sintered silicon nitride comprises the steps of: milling raw powder including Si powder to have sizes less than or equal to 1 micron; mixing the Si powder milled from the previous step and a preparation for sintering and forming the mixture of the same; nitridation processing the formed body at 1350 to 1450°C and forming reaction bonded silicon nitride inside the formed body; and manufacturing reaction sintered silicon nitride sintered body by sintering the reaction bonded silicon nitride at temperature greater than or equal to 1850°C. According to the present invention, the reaction sintered silicon nitride sintered body has high thermal conductivity. COPYRIGHT KIPO 2016 ...

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Номер записи: 9
16-08-2017 дата публикации

METHOD FOR MANUFACTURING REACTION BONDED SILICON NITRIDE

Номер: KR101768840B1
Автор: LEE, SEUNG JUN, BAEK, SEUNG SU, YONG, SEOK MIN, KIM, HAI DOO, KO, JAE WOONG, KIM, HA NEUL
Принадлежит: AGENCY FOR DEFENSE DEVELOPMENT

The present invention relates to a method for manufacturing silicon nitride. In order to achieve the objectives, the present invention provides a method for manufacturing silicon nitride which comprises the following steps: mixing a Si raw material powder, SiO_2 and ytterbium additive to manufacture a mixture; molding the mixture into a shaped body having a predetermined shape; and nitriding the molded body. According to one embodiment of the present invention, since the ytterbium additive plays a role of promoting the nitridation of silicon and SiO_2 and preventing the adsorption of CO, generation of silicon carbide on the surface of silicon nitride can be suppressed. Thus, the present invention can prevent the silicon nitride from being imparted with undesired characteristics. COPYRIGHT KIPO 2017 (AA) Start (BB) End (S110) Mixing a Si raw material powder, SiO_2 and ytterbium additive to manufacture a mixture (S120) Molding the mixture into a shaped body having a predetermined shape (S130 ...

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Номер записи: 10
03-03-2011 дата публикации

REACTION SINTERED SILICON NITRIDE FOR WHICH SILICON PARTICLE SIZE DISTRIBUTION ADJUSTMENT IS EMPLOYED, AND A PRODUCTION METHOD THEREFOR

Номер: KR2011025117A1
Автор: LEE, Sea Hoon, KIM, Hai Doo, KO, Jae Woong
Принадлежит:

The present invention relates to reaction sintered silicon nitride for which silicon particle size distribution adjustment is employed, and to a production method therefor, and more specifically it relates to: reaction sintered silicon nitride for which silicon particle size distribution adjustment is employed in such a way as to lower the sintering temperature and improve the mechanical properties of the silicon nitride by selecting silicon as the starting material for producing the silicon nitride, adding a sintering aid and allowing reaction sintering to proceed in such a way as to give a particle size distribution in which there are at least two ranges of particle size in the silicon nitride; and to a production method therefor. To this end, provided is a production method for reaction sintered silicon nitride for which silicon particle size distribution adjustment is employed, comprising the steps of: mixing a first silicon having a particle range of from 5 to 10 μm and a second silicon ...

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Номер записи: 11
21-04-2016 дата публикации

YTTRIA BASED ELECTRICALLY CONDUCTIVE PLASMA-RESISTANT MEMBER AND MANUFACTURING METHOD THEREOF

Номер: KR1020160043213A
Автор: KIM, HAI DOO, LEE, JAE WOOK, KIM, HA NEUL, KIM, JIN MYUNG, PARK, YOUNG JO, KO, JAE WOONG
Принадлежит:

Disclosed is an electrically conductive plasma-resistant member comprising yttrium oxide. According to the present invention, the plasma-resistant member comprises a matrix phase made of yttrium oxide, and a dispersed phase including at least one kind of metal carbide or nitride selected from the group consisting of Ti, Zr, and Hf. In the present invention, an yttria composite at the level of a semiconductor is provided, and can be used as a plasma-resistant member requiring electric conductivity such as a focus ring. COPYRIGHT KIPO 2016 ...

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Номер записи: 12