07-03-2017 дата публикации
Номер: KR1020170024450A
Принадлежит:
The present invention relates to crystalline bismuth (Bi) nanoparticle arrays which are prepared by co-sputtering using bismuth (Bi) and cobalt (Co) as a target material, and to a preparing method thereof, comprising the following steps of: locating a silicon (Si) substrate in a vacuum chamber; and forming a deposited film by co-sputtering using the Bi and Co as the target material on the silicon substrate. According to the present invention, crystalline Bi nanoparticle arrays of which a particle size, density, and morphology can be adjusted by using a magnetically assisted growth of Bi nanoparticles (MAGBIN) are prepared. According to the present invention, a size and morphology of the Bi nanoparticles can be adjusted by co-sputtering using the Bi and Co as the target material, and by adjusting the relative power ratio of the two target materials, the substrate temperature, and a deposition time. The MAGBIN of the present invention enables to easily synthesize the crystalline Bi nanoparticle ...
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