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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 20. Отображено 20.
04-04-2019 дата публикации

CHALCOGEN COMPOUND, METHOD FOR PREPARING SAME, AND THERMOELECTRIC ELEMENT COMPRISING SAME

Номер: WO2019066580A2
Автор: KIM, Min Kyoung, MIN, Yu Ho, PARK, Cheol Hee, KO, Kyung Moon, PARK, Chee Sung, JUNG, Myung Jin
Принадлежит:

The present invention provides: a novel chalcogen compound of chemical formula 1 below, showing an excellent thermoelectric figure of merit (ZT) through increased output factor and reduced thermal conductivity; a method for preparing the same; and a thermoelectric element comprising the same. [Chemical formula 1] MyV1-ySnxSb2Tex+3 wherein V represents vacancy, M represents an alkali metal, x≥6, and 0 Подробнее

Номер записи: 1
23-11-2018 дата публикации

CHALCOGEN COMPOUND, MANUFACTURING METHOD THEREOF AND THERMOELECTRIC ELEMENT INCLUDING SAME

Номер: KR1020180125341A
Автор: MIN, YU HO, KIM, MIN KYOUNG, PARK, CHEOL HEE, KO, KYUNG MOON, PARK, CHEE SUNG, JUNG, MYUNG JIN
Принадлежит:

The present invention relates to a novel chalcogen compound, a manufacturing method thereof and a thermoelectric element including the same, which represent excellent phase stability even at a temperature corresponding to a driving temperature of a thermoelectric element and have a high output factor and a high thermoelectric performance index. The chalcogen compound is represented by chemical formula 1, V_xM_yPb_zSn_(4-z)Bi_2Se_7. COPYRIGHT KIPO 2019 (AA) Comparative example 1 (BB) Example 1 (CC) Example 2 (DD) Example 3 (EE) Example 4 (FF) Example 5 ...

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Номер записи: 2
09-01-2019 дата публикации

칼코겐 화합물, 이의 제조 방법, 및 이를 포함하는 열전소자

Номер: KR1020190003335A
Автор: 김민경, 민유호, 박철희, 고경문, 박치성, 정명진
Принадлежит:

... 본 발명에서는 저온, 특히 열전소자의 구동 온도에 대응하는 온도에서 우수한 상 안정성을 나타내며, 출력인자 증가 및 열전도도 감소를 통해 우수한 열전 성능지수를 나타내는, 하기 화학식 1의 신규 칼코겐 화합물, 이의 제조 방법 및 이를 포함하는 열전소자가 제공된다: [화학식 1] V1-xMxSn4Bi2Se7-yTey 상기 화학식 1에서, V는 공공이고, M은 알칼리 금속이며, x는 0 초과 1 미만이고, y는 0 초과 1 이하이다.

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Номер записи: 3
28-09-2018 дата публикации

NOVEL COMPOUND SEMICONDUCTOR AND APPLICATION THEREOF

Номер: KR1020180105505A
Автор: KO, KYUNG MOON, KIM, MIN KYOUNG, PARK, CHEOL HEE, PARK, CHEE SUNG, JUNG, MYUNG JIN, MIN, YU HO
Принадлежит:

The present invention provides a novel compound semiconductor material which can be utilized for various applications such as a thermoelectric conversion material of a thermoelectric conversion element and a solar cell by having an improved thermoelectric conversion index as well as excellent electrical conductivity, and a manufacturing method thereof. A compound semiconductor is represented by the following chemical formula, P_rxS_yCo_4Sb_(12-z)Q_z, where Q includes at least one of O, Se, and Te. COPYRIGHT KIPO 2018 (AA) Comparative example 1 (BB) Comparative example 2 (CC) Comparative example 3 (DD) Example 1 (EE) Example 2 (FF) Example 3 (GG) Example 4 ...

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Номер записи: 4
20-09-2018 дата публикации

NOVEL COMPOUND SEMICONDUCTOR AND USE THEREOF

Номер: WO2018169173A1
Автор: KO, Kyung Moon, KIM, Min Kyoung, PARK, Cheol Hee, PARK, Chee Sung, JUNG, Myung Jin, MIN, Yu Ho
Принадлежит:

The present invention provides a novel compound semiconductor material and a production method therefor, the novel compound semiconductor material having excellent electrical conductivity along with an enhanced thermoelectric figure of merit, thereby being capable of being employed for various uses such as for a solar cell, as a thermoelectric conversion material for a thermoelectric conversion device, and so forth.

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Номер записи: 5
17-07-2017 дата публикации

P-TYPE SKUTTERUDITE THERMOELECTRIC MATERIAL AND THERMOELECTRIC ELEMENT INCLUDING SAME

Номер: KR1020170082982A
Автор: MIN, YU HO, PARK, CHEOL HEE, KWON, O JONG, KIM, JAE HYUN
Принадлежит:

The present invention relates to a P-type skutterudite thermoelectric material and a thermoelectric element including the same, and more particularly, to a P-type skutterudite thermoelectric material with high thermoelectric performance by introducing a specific filler and a charge compensation material, and a thermoelectric element. COPYRIGHT KIPO 2017 ...

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Номер записи: 6
28-09-2018 дата публикации

NOVEL COMPOUND SEMICONDUCTOR AND APPLICATION THEREOF

Номер: KR1020180105504A
Автор: KO, KYUNG MOON, PARK, CHEOL HEE, KIM, MIN KYOUNG, PARK, CHEE SUNG, JUNG, MYUNG JIN, MIN, YU HO
Принадлежит:

The present invention provides a novel compound semiconductor material which can be utilized for various applications such as a thermoelectric conversion material of a thermoelectric conversion element and a solar cell by having an improved thermoelectric conversion index as well as excellent electrical conductivity, and a manufacturing method thereof. A compound semiconductor is represented by the chemical formula, S_xCo_4Sb_(12-y-z)Q_ySn_z, where Q includes at least one of O, Se, and Te. COPYRIGHT KIPO 2018 (AA) Comparative example 1 (BB) Comparative example 2 (CC) Comparative example 3 (DD) Comparative example 4 (EE) Comparative example 5 (FF) Comparative example 6 (GG) Example 1 (HH) Example 2 (II) Example 3 ...

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Номер записи: 7
07-02-2019 дата публикации

CHALCOGEN COMPOUND, METHOD FOR PREPARING SAME, AND THERMOELECTRIC DEVICE COMPRISING SAME

Номер: WO2019004613A8
Автор: KIM, Min Kyoung, MIN, Yu Ho, PARK, Cheol Hee, KO, Kyung Moon, PARK, Chee Sung, JUNG, Myung Jin
Принадлежит:

Provided in the present invention is: a novel chalcogen compound represented by chemical formula 1 below, exhibiting excellent phase stability in low temperatures and especially in temperatures corresponding to thermoelectric device driving temperatures, and exhibiting an excellent thermoelectric power factor due to increased output arguments and reduced heat conductivity; a method for preparing a novel chalcogen compound; and a thermoelectric device comprising same. [Chemical formula 1] V1-xMxSn4Bi2Se7-yTey In chemical formula 1, V is vacancy, M is an alkali metal, X is over 0 and under 1, and y is over 0 and under 1.

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Номер записи: 8
06-06-2019 дата публикации

CHALCOGEN COMPOUND, METHOD FOR PREPARING SAME, AND THERMOELECTRIC ELEMENT COMPRISING SAME

Номер: WO2019066580A3
Автор: KIM, Min Kyoung, MIN, Yu Ho, PARK, Cheol Hee, KO, Kyung Moon, PARK, Chee Sung, JUNG, Myung Jin
Принадлежит:

The present invention provides: a novel chalcogen compound of chemical formula 1 below, showing an excellent thermoelectric figure of merit (ZT) through increased output factor and reduced thermal conductivity; a method for preparing the same; and a thermoelectric element comprising the same. [Chemical formula 1] MyV1-ySnxSb2Tex+3 wherein V represents vacancy, M represents an alkali metal, x≥6, and 0 Подробнее

Номер записи: 9
04-01-2019 дата публикации

칼코겐 화합물, 이의 제조 방법, 및 이를 포함하는 열전소자

Номер: KR1020190001356A
Автор: 김민경, 민유호, 박철희, 고경문, 박치성, 김재현, 정명진
Принадлежит:

... 본 발명에서는 열전소자의 구동 온도에 대응하는 온도에서 우수한 상(phase) 안정성을 나타내며, 출력인자 증가 및 열전도도 감소를 통해 우수한 열전 성능지수(ZT)를 나타내는, 하기 화학식 1의 신규 칼코겐 화합물, 이의 제조 방법 및 이를 포함하는 열전소자가 제공된다: [화학식 1] V1-xMxSn4-yPbyBi2Se7-zTez 상기 화학식 1에서, V는 공공(Vacancy)이고, M은 알칼리 금속이며, x는 0 초과 1 미만, y는 0 초과 4 미만, z는 0 초과 1 이하이다.

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Номер записи: 10
17-12-2018 дата публикации

CHALCOGEN COMPOUND, MANUFACTURING METHOD THEREOF, AND THERMOELECTRIC ELEMENT INCLUDING SAME

Номер: KR1020180133712A
Автор: MIN, YU HO, KIM, MIN KYOUNG, PARK, CHEOL HEE, KO, KYUNG MOON, PARK, CHEE SUNG, JUNG, MYUNG JIN
Принадлежит:

The present invention provides a novel chalcogen compound represented by chemical formula 1, V_(1-)_(2x)Sn_4Bi_2_-_xAg_(3x)Se_7; a manufacturing method thereof; and a thermoelectric element including the same. In particular, the novel chalcogen compound exhibits excellent phase stability at a temperature corresponding to a driving temperature of a thermoelectric element, and exhibits excellent output factor and thermoelectric performance indexes (ZT) due to excellent electrical conductivity and low thermal conductivity due to a unique crystal lattice structure. In the chemical formula 1, V is vacancy, and 0 Подробнее

Номер записи: 11
19-05-2017 дата публикации

P TYPE SKUTTERUDITE THERMOELECTRIC MATERIAL, MANUFACTURING METHOD THEREOF, AND THERMOELECTRIC ELEMENT HAVING SAME

Номер: KR1020170055413A
Автор: MIN, YU HO, LEE, SU JEONG, LEE, YE SEUL, PARK, CHEOL HEE, KIM, JAE HYUN
Принадлежит:

The present invention relates to a p type skutterudite thermoelectric material, a manufacturing method thereof, and a thermoelectric element having the same. More specifically, the present invention relates to a p type skutterudite thermoelectric material which represents the high thermoelectric performance by introducing a specific filler and a charge reinforcing material, a manufacturing method thereof, and a thermoelectric element. COPYRIGHT KIPO 2017 ...

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Номер записи: 12
18-05-2017 дата публикации

P-TYPE SKUTTERUDITE THERMOELECTRIC MATERIAL, MANUFACTURING METHOD THEREFOR, AND THERMOELECTRIC ELEMENT COMPRISING SAME

Номер: WO2017082578A1
Автор: MIN, Yu Ho, LEE, Su Jeong, LEE, Ye Seul, PARK, Cheol-Hee, KIM, Jae Hyun
Принадлежит:

The present invention relates to a P-type skutterudite thermoelectric material, a manufacturing method therefor, and a thermoelectric element comprising the same. More specifically, the present invention relates to: a P-type skutterudite thermoelectric material having a specific filler material and charge compensating material, which are introduced therein, so as to exhibit high thermoelectric performance; a manufacturing method therefor; and a thermoelectric element.

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Номер записи: 13
20-09-2018 дата публикации

NOVEL COMPOUND SEMICONDUCTOR AND USE THEREOF

Номер: WO2018169172A1
Автор: KO, Kyung Moon, PARK, Cheol Hee, KIM, Min Kyoung, PARK, Chee Sung, JUNG, Myung Jin, MIN, Yu Ho
Принадлежит:

The present invention provides a novel compound semiconductor represented by chemical formula 1: SxCo4Sb12-y-zQySnz. In chemical formula 1: Q includes at least one of O, Se and Te; x, y and z mean the molar ratio of each element; and 0 Подробнее

Номер записи: 14
10-05-2018 дата публикации

CHALCOGEN COMPOUND, METHOD FOR MANUFACTURING SAME, AND THERMOELECTRIC DEVICE INCLUDING CHALCOGEN COMPOUND

Номер: KR1020180048313A
Автор: MIN, YU HO, PARK, CHEOL HEE
Принадлежит:

The present invention relates to a chalcogen compound, a method for manufacturing the same, and a thermoelectric device including the chalcogen compound. According to an embodiment of the present invention, the thermoelectric device comprises a chalcogen compound as a thermoelectric conversion material. According to the present invention, the chalcogen compound, the method for manufacturing the same, and the thermoelectric device including the chalcogen compound can provide excellent phase stability. COPYRIGHT KIPO 2018 (AA) Example 3 (BB) Example 2 (CC) Example 1 (DD) Comparative example 1 ...

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Номер записи: 15
03-01-2019 дата публикации

CHALCOGEN COMPOUND, METHOD FOR PREPARING SAME, AND THERMOELECTRIC DEVICE COMPRISING SAME

Номер: WO2019004613A1
Автор: KIM, Min Kyoung, MIN, Yu Ho, KO, Kyung Moon, PARK, Chee Sung, JUNG, Myung Jin
Принадлежит:

Provided in the present invention is: a novel chalcogen compound represented by chemical formula 1 below, exhibiting excellent phase stability in low temperatures and especially in temperatures corresponding to thermoelectric device driving temperatures, and exhibiting an excellent thermoelectric power factor due to increased output arguments and reduced heat conductivity; a method for preparing a novel chalcogen compound; and a thermoelectric device comprising same. [Chemical formula 1] V1-xMxSn4Bi2Se7-yTey In chemical formula 1, V is vacancy, M is an alkali metal, X is over 0 and under 1, and y is over 0 and under 1.

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Номер записи: 16
03-01-2019 дата публикации

CHALCOGEN COMPOUND, METHOD FOR PREPARING SAME, AND THERMOELECTRIC DEVICE COMPRISING SAME

Номер: WO2019004591A1
Автор: KIM, Min Kyoung, MIN, Yu Ho, PARK, Cheol Hee, KO, Kyung Moon, PARK, Chee Sung, KIM, Jae Hyun, JUNG, Myung Jin
Принадлежит:

Provided in the present invention is: a novel chalcogen compound represented by chemical formula 1 below, exhibiting excellent phase stability in temperatures corresponding to thermoelectric device driving temperature, and exhibiting an excellent thermoelectric power factor (ZT) due to increased output arguments and reduced heat conductivity; a method for preparing a novel chalcogen compound; and a thermoelectric device comprising same. [Chemical formula 1] V1-xMxSn4-yPbyBi2Se7-zTez In chemical formula 1, V is vacancy, M is an alkali metal, X is over 0 and under 1, y is over 0 and under 4, and z is over 0 and under 1.

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Номер записи: 17
03-05-2018 дата публикации

CHALCOGENIDE COMPOUND, PRODUCTION METHOD THEREOF AND THERMOELECTRIC ELEMENT COMPRISING SAME

Номер: WO2018080085A1
Автор: MIN, Yu Ho, PARK, Cheol-Hee
Принадлежит:

The present invention relates to a novel chalcogenide compound exhibiting low thermal conductivity, excellent thermoelectric properties and excellent phase stability even at a relatively low temperature, a production method thereof, and a thermoelectric element comprising the same.

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Номер записи: 18
13-12-2018 дата публикации

CHALCOGEN COMPOUND, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC ELEMENT INCLUDING SAME

Номер: WO2018226023A1
Автор: KIM, Min Kyoung, MIN, Yu Ho, PARK, Cheol Hee, KO, Kyung Moon, PARK, Chee Sung, JUNG, Myung Jin
Принадлежит:

The present invention provides a novel chalcogen compound represented by Formula 1 below, a method for producing same, and a thermoelectric element including same, wherein the chalcogen compound exhibits excellent phase stability at low temperatures, specifically, temperatures corresponding to the operating temperature of thermoelectric elements, and exhibits a particularly excellent output factor and thermoelectric figure of merit due to the excellent electrical conductivity and low thermal conductivity that are due to a characteristic crystal lattice structure. [Formula 1] V1-2xSn4Bi2-xAg3xSe7 (where V represents a vacancy and 0 Подробнее

Номер записи: 19
22-11-2018 дата публикации

CHALCOGENIDE, PREPARATION METHOD THEREFOR, AND THERMOELECTRIC ELEMENT COMPRISING SAME

Номер: WO2018212441A1
Автор: MIN, Yu Ho, KIM, Min Kyoung, PARK, Cheol Hee, KO, Kyung Moon, PARK, Chee Sung, JUNG, Myung Jin
Принадлежит:

The present invention relates to: a novel chalcogenide exhibiting excellent phase stability even at a temperature corresponding to the operating temperature of a thermoelectric element, and having a high output factor and thermoelectric figure of merit; a preparation method therefor; and a thermoelectric element comprising same.

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Номер записи: 20