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Небесная энциклопедия

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Применить Всего найдено 5. Отображено 5.
08-07-2016 дата публикации

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160081376A
Автор: CHUNG, TAE HOON, BEAK, JONG HYEOB, LEE, SANG HERN, JEON, SEONG RAN, JEONG, TAK, OH, HWA SUB, LEE, SEUNG JAE, JU, JIN WOO, JUNG, SUNG HOON, LEE, KWANG JAE, MIN, PAN KI
Принадлежит:

Disclosed is a nitride semiconductor light emitting device. In the present invention, an insertion layer made of AlN or AlGaN is disposed in the lower part of a defect relaxation layer or inside the defect relaxation layer to block the progression of a crystal defect. The nitride semiconductor light emitting device includes: a buffer layer of the upper portion of a substrate; a nitride semiconductor layer disposed in the upper portion of the buffer layer and growing at a predetermined first temperature; the defect relaxation layer disposed between the buffer layer and the nitride semiconductor layer to block the progression of the crystal defect; and the insertion layer disposed between the buffer layer and the defect relaxation layer to block the progression of the crystal defect. COPYRIGHT KIPO 2016 ...

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Номер записи: 1
10-07-2018 дата публикации

GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020180079031A
Автор: CHUNG, TAE HOON, BAEK, JONG HYEOB, JU, JIN WOO, OH, HWA SUB, MIN, PAN KI
Принадлежит:

The present invention is to provide a group III nitride semiconductor light emitting device having a structure capable of preventing a V-pit multiple quantum well structure in a process of growing a p-type group III nitride semiconductor layer on an active layer having a V-pit multiple quantum well structure. The group III nitride semiconductor light emitting device includes: an n-type group III nitride semiconductor layer; a V-pit seed layer layered on a top surface of the n-type group III nitride semiconductor layer, and grown at a temperature as much as a preset temperature (ΔT1) below a growth temperature (T1) of the n-type group III nitride semiconductor layer, thereby forming a V-pit having a V-shaped cross section on its upper surface; an active layer grown on the V-pit seed layer, and having a V-pit light emitting layer formed of quantum well layers repeatedly layered and grown on the inner slope of the V-pit and barrier layers; and a V-pit protection layer grown on the active layer ...

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Номер записи: 2
19-12-2016 дата публикации

SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020160144520A
Автор: CHUNG, TAE HOON, BAEK, JONG HYEOB, JEON, SEONG RAN, JUNG, SUNG HOON, OH, HWA SUB, LEE, SEUNG JAE, SONG, YOUNG HO, MIN, PAN KI, LEE, KWANG JAE
Принадлежит:

The present invention provides a semiconductor light emitting device and a method for manufacturing the same. According to the present invention, the method for manufacturing the semiconductor light emitting device includes: a step of forming a first nitride semiconductor layer on a substrate; a step of forming a second nitride semiconductor layer on the first nitride semiconductor layer; a step of forming a V-pit layer on the second nitride semiconductor layer; a step of forming an active layer on the V-pit layer; and a step of forming a third nitride semiconductor layer on the active layer. The present invention reduces driving current loss of the light emitting device and improves the efficiency of light extraction. COPYRIGHT KIPO 2016 (S210) Forming an n-type nitride semiconductor layer on a substrate (S220) Forming a V-pit layer (S230) Forming an active layer (S240) Forming a p-type nitride semiconductor layer ...

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Номер записи: 3
26-02-2019 дата публикации

3족 질화물 반도체 발광소자

Номер: KR0101928479B1
Автор: 정태훈, 백종협, 주진우, 오화섭, 민판기
Принадлежит: 한국광기술원

... 개시되는 3족 질화물 반도체 발광소자는, n형 3족 질화물 반도체층; 상기 n형 3족 질화물 반도체층의 상면에 적층되며, 상기 n형 3족 질화물 반도체층의 성장온도(T1)보다 설정된 온도(△T1)만큼 저온에서 성장되어, 상면에 V 형상의 단면을 가지는 브이핏(V-pit)을 형성하는 브이핏 씨앗층; 상기 브이핏 씨앗층 위에 성장되며, 상기 브이핏의 내부 사면에 반복 적층 성장되는 양자우물층과 장벽층으로 형성되는 브이핏 발광층을 가지는 활성층; 및 상기 활성층 위에 성장되며, InGaN으로 형성되는 브이핏 보호층;을 포함한다.

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Номер записи: 4
08-07-2016 дата публикации

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

Номер: KR1020160081378A
Автор: CHUNG, TAE HOON, BEAK, JONG HYEOB, LEE, SANG HERN, JEON, SEONG RAN, JEONG, TAK, OH, HWA SUB, LEE, SEUNG JAE, JU, JIN WOO, JUNG, SUNG HOON, LEE, KWANG JAE, MIN, PAN KI
Принадлежит:

Disclosed is a nitride semiconductor light emitting device. A p-type nitride semiconductor layer of the present invention is arranged on a region where an active layer is not arranged in an n-type nitride semiconductor layer, and on the upper part of the active layer. The p-type nitride semiconductor layer is in contact with the vertical surface and the horizontal surface of the in-phase of the active layer. At the same time, holes are injected to the active layer. So, efficiency droop due to a difference between the mobility of holes and the mobility of electrons can be reduced. Also, the injection efficiency of holes can be improved. COPYRIGHT KIPO 2016 ...

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Номер записи: 5