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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 22. Отображено 22.
31-01-2017 дата публикации

비휘발성 메모리 및 비휘발성 메모리의 제조 방법

Номер: KR0101700992B1
Автор: 박건식, 백규하
Принадлежит: 한국전자통신연구원

... 비휘발성 메모리 및 비휘발성 메모리의 제조 방법이 개시된다. 일실시예에 따른 비휘발성 메모리는, 기판에 형성된 딥 웰(Deep Well); 상기 딥 웰 영역 내에 형성된 제1 웰; 상기 딥 웰 영역 내에 상기 제1 웰과 이격되어 형성된 제2 웰; 상기 제1 웰 상에 형성된 제1 MOSFET; 및 상기 제2 웰 상에 형성된 제2 MOSFET을 포함할 수 있다. 일실시예에 따른 비휘발성 메모리의 제조 방법은, 컨트롤 MOSFET의 웰 영역을 인접한 메모리 셀의 컨트롤 MOSFET의 웰 영역과 공유시키거나, 터널링 MOSFET의 웰 영역을 인접한 메모리 셀의 터널링 MOSFET의 웰 영역과 공유시킴으로써, 메모리 셀의 면적을 줄일 수 있다. 또한, 일실시예에 따른 비휘발성 메모리는, 터널링 MOSFET에 있어서 공유된 웰 영역의 전압을 일정하게 유지하고, 소스/드레인의 전압을 인접한 셀과 다르게 함으로써 웰 영역을 공유하면서도 선택한 메모리 셀에만 데이터를 기록하거나 또는, 기록된 데이터를 지울 수 있다.

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17-01-2019 дата публикации

전력 반도체 소자의 제조 방법

Номер: KR1020190006146A
Принадлежит:

... 본 발명은 전력 반도체 소자의 제조방법에 관한 것으로, 기판의 상부에 이온주입 영역 및 이온주입 영역의 적어도 일부를 둘러싸는 가드링 영역을 형성하는 것, 기판 상에 이온주입 영역 및 가드링 영역을 덮는 제1 절연막을 형성하는 것, 제1 절연막을 열처리하는 것 및 제1 절연막 상에 제1 절연막 보다 두꺼운 제2 절연막을 형성하는 것을 포함하되, 기판은 실리콘 카바이드를 포함하고, 열처리는 질소(N) 원소를 포함하는 가스를 이용하여 수행되는 전력 반도체 소자의 제조방법이 제공된다.

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04-12-2017 дата публикации

능동 무선 전력 장치 및 그 방법

Номер: KR0101804254B1
Принадлежит: 한국전자통신연구원

... 능동 무선 전력 장치는 무선 통신 장치 예를 들어, 무선 센서 장치나 무선 센서 태그 등에 소정 시간 동안 발사되는 빛이나 레이저 또는 소정 주파수의 무선 신호를 수신하고, 수신되는 신호를 충전하여 소정 레벨의 전압 신호를 생성한다. 생성된 전압 신호는 무선 전력 장치의 바이어스 전원과 더불어 무선 통신 장치를 동작 모드로 전환시킨다.

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23-10-2018 дата публикации

POWER SEMICONDUCTOR DEVICE

Номер: KR1020180115394A
Принадлежит:

The present invention relates to a power semiconductor device, comprising: a substrate; a first epilayer and a second epilayer sequentially disposed on the substrate; buried regions disposed in the first epilayer and spaced from each other; and a buried gate disposed in a trench in the second epilayer, and located on the second epilayer between the buried regions, wherein the buried gate comprises: a first gate insulating film filling the bottom of the trench; a gate electrode on the first gate insulating film; and a second gate insulating film between sidewalls of the gate electrode and sidewalls of the trench. The thickness of the first gate insulating film is larger than the thickness of the second gate insulating film. COPYRIGHT KIPO 2018 ...

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11-06-2018 дата публикации

SELF-STANDING CONTAINER SYSTEM

Номер: KR101852969B1
Принадлежит: JUNMA CO., LTD.

The present invention relates to a self-standing container system including; a container provided with an opening/closing door; a frame formed of a plurality of structural members connected to each other, supporting the container, and having a lower space part in which the structural members are spaced apart from the container bottom; a lower support device including a sliding shaft mounted in the lower space part, and an expandable column having one end fitted to the sliding shaft, rotating in a state of being moved outward from the sliding shaft, and vertically adjustable; a ladder device including a pair of step frames rotatably connected to the opening/closing door, arranged parallel to each other, and connected to an extension frames at a lower end of thereof in which extension frames are rotatable and foldable, a plurality of foot step members each interconnecting the opposing step frames and opposing extension frames, rails straightly formed at an outer sides of the step frames and ...

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25-06-2020 дата публикации

COLD CATHODE COMPRISING GRAPHENE FILM, AND ELECTRON GUN USING SAME

Номер: WO2020130642A1
Принадлежит:

The present invention relates to a cold cathode comprising a graphene film, and an electron gun using same. More particularly, the present invention relates to a cold cathode comprising a graphene film and an electron gun using same, which can be used in vacuum electronic devices having a range of millimeter and sub millimeter frequencies. The present invention provides a cold cathode comprising a graphene film and capable of stably emitting electrons having a high current density, and an electron gun comprising same. Specifically, a cold cathode including a thin graphene film having a high aspect ratio can maintain a high current density and current.

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15-02-2016 дата публикации

A base mold and method of fabricating a mold

Номер: KR0101593601B1
Принадлежит: 한국전자통신연구원

... 본 발명은 베이스 몰드 및 몰드의 제조방법에 관한 것으로, 보다 구체적으로는 기판 상에 서로 이격되어 차례로 적층된 제1막 및 제2막을 형성하는 것; 상기 제1막을 패터닝하여 제1패턴을 형성하는 것; 상기 제1패턴의 양 측벽들 상에 제1스페이서를 형성하는 것; 상기 제1스페이서를 식각 마스크로 상기 제2막을 식각하여, 제2패턴을 형성하는 것; 상기 제1스페이서를 제거하여, 상기 기판 상에 상기 제1패턴 및 상기 제2패턴을 포함하는 적층 구조체를 형성하는 것; 및 상기 적층 구조체를 덮는 몰드막을 형성하는 것을 포함하는 몰드의 제조방법에 관한 것이다.

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07-10-2016 дата публикации

SCHOTTKY DIODE

Номер: KR1020160116294A
Принадлежит:

The present invention relates to a Schottky diode which does not interrupt a forward current characteristic and enhances a reverse flow blocking characteristic of a device. The Schottky diode of the present invention comprises: a substrate; a drift layer disposed on the substrate; a junction termination layer disposed on a boundary of an active region and a peripheral region; a first metal layer which covers a portion of the active region and a portion of the junction termination layer; and a second metal layer which covers the first metal layer and the active region, wherein the drift layer includes the active region and the peripheral region formed in an edge of the active region, the first metal layer and the second metal layer come in contact with the drift layer to form a Schottky junction, and the first metal layer has a higher Schottky barrier than the second metal layer. COPYRIGHT KIPO 2016 ...

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06-12-2017 дата публикации

비어 전극의 제조방법

Номер: KR0101804837B1
Принадлежит: 한국전자통신연구원

... 본 발명은 생산성 및 생산수율을 증대 또는 극대화할 수 있는 비어 전극의 제조방법을 개시한다. 그의 제조 방법은, 기판에 비어 홀을 형성하는 단계와, 상기 비어 홀의 측벽 및 바닥에 촉매 층을 형성하는 단계와, 상기 촉매 층을 그라핀 입자들이 혼합된 용액(solution)에 노출시켜, 상기 비어 홀 내에 그라핀 층을 형성하는 단계를 포함한다.

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07-12-2016 дата публикации

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: KR1020160140354A
Принадлежит:

A manufacturing method of a semiconductor device comprises the following steps of: providing a substrate; forming at least one doping region having conductivity on an upper portion of the substrate; forming a capping layer on the substrate wherein the capping layer includes an impurity or a passivation material having conductivity; and thermally treating the substrate to form a diffusion region having conductivity on the upper portion of the substrate contacting the capping layer or reform a surface of the upper portion of the substrate. The substrate is a silicon carbide (SiC) substrate. COPYRIGHT KIPO 2016 ...

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16-03-2016 дата публикации

Transmission filter for electromagnetic wave and electromagnetic camera using the same

Номер: KR0101603769B1

... 입사하는 전자기파 중에서는 특정 파장 근처의 좁은 대역의 전자기파만을 선택하여 투과시킬 수 있는 전자기파 투과 필터 및 이를 채용한 전자기파 카메라를 개시한다. 개시된 전자기파 투과 필터는 관통된 개구를 갖는 전도성 기판 및 개구에 배치된 나선형 코일을 포함할 수 있다. 이러한 전자기파 투과 필터는 원하는 파장 근처의 좁은 대역의 전자기파만을 투과시킬 수 있으며, 투과 전자기파의 세기를 증가시킬 수 있다.

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25-06-2020 дата публикации

TUNGSTEN-DOPED GRAPHENE OXIDE FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRON EMITTER INCLUDING SAME

Номер: WO2020130658A1
Принадлежит:

A method for producing a tungsten-doped graphene oxide according to an embodiment of the present invention comprises: a step for mixing a graphene oxide solution and a WO3 solution to prepare a mixed solution; a step for performing a hydrothermal treatment on the mixed solution to form a tungsten-doped graphene oxide; and a step for heat-treating the tungsten-doped graphene oxide at a temperature of 800-1200°C. The production method according to the present embodiment improves the physical properties of graphene oxide, thereby overcoming the current density limitation of high-frequency electronic devices and improving the overall current capacity, and can reduce oxygen and other contaminants by using WO3 nanoparticle doping. In addition, since tungsten has a high melting point and high mechanical strength, a graphene oxide film can be kept stable during very high emission.

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18-01-2018 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020180006541A
Принадлежит:

The present invention relates to a semiconductor device and a method for manufacturing the same. The purpose of the present invention is to provide the semiconductor device in which leakage current is reduced. The method for manufacturing the semiconductor device comprises: a step of forming an epi layer on a substrate; a step of forming a bar-shaped first mask extending in one direction from the plan view on the epi layer; a step of performing an ion injection process on the epi layer to form a body region; a step of forming a second mask disposed on the epi layer and a spacer covering a side surface of the first mask; a step of injecting a dopant into the body region exposed by the second mask and the spacer to form source regions; a step of removing the first and second masks and the spacer; and a step of forming a gate insulating film and a gate on a drift region, wherein the region between the body regions is defined as a drift region by the body regions, a portion of the body region ...

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19-06-2018 дата публикации

ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND ELECTRONIC DEVICE INCLUDING SAME

Номер: KR1020180066391A
Принадлежит:

The present invention relates to an electrostatic discharge protection device and an electronic device including the same. According to an embodiment of the present invention, the electrostatic discharge protection device comprises a first P well, a second P well, an N well, an N+ bridge region, a P+ bridge region, a first N+ region, a first P+ region, a second N+ region, a second P+ region, and a gate. The N well is arranged between the first P well and the second P well. The N+ bridge region is formed in a junction region of the second P well and the N well. The P+ bridge region is formed in a junction region of the first P well and the N well. The first N+ region and the first P+ region are formed in the first P well and are connected to an anode terminal. The second N+ region and the second P+ region are formed in the second P well and are connected to a cathode terminal. The gate is arranged on the second P well between the N+ bridge region and the second N+ region. The electrostatic ...

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20-07-2018 дата публикации

MANIFOLD COVER FOR FASTENING RELAY AND FUSE BOX AND ASSEMBLING METHOD THEREOF

Номер: KR1020180083207A
Автор: PARK, GUN SIK
Принадлежит:

The present invention provides a manifold cover for fastening a relay and a fuse box and an assembling method thereof. The manifold cover includes: a drawing portion for drawing a plurality of power lines from the relay and the fuse box; a pair of cover bodies which are assembled with each other to protect the power lines by receiving the power lines exposed between end portions of a corrugate tube that receives the power lines therein; a tube cover portion having one side formed with one or more pitch projections protruding from an inner circumferential surface of the tube cover portion corresponding to pitch grooves formed on an outer circumferential surface of the corrugate tube to partially receive an end of the corrugate tube; a box connecting portion having the other side, in which two flanges are formed on the outer portion of an outer peripheral surface of the other side and a section between the two flanges is seated on the drawing portion of the relay and the fuse box; and an ...

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01-12-2016 дата публикации

PORTABLE SOLAR CHARGING DEVICE AND POWER SUPPLY UNIT

Номер: KR101681755B1
Принадлежит: JUNMA CO., LTD.

The present invention relates to a portable solar charging device and power supply unit. According to the present invention, a portable solar charging device and power supply unit comprises: a sunlight collection plate foldable to a main unit to collect sunlight so as to generate current; a charger to store the current generated by the sunlight collection plate; a connector to connect the charger with an external device; and a controller to control cut supplied to the charger and the connector, so the portable solar charging device and power supply unit can be carried in a bag type at ordinary times, the charger is charged by unfolding the sunlight collection plate from the main unit at use, and an external device receives power by being connected through the connector. A portable solar charging device and power supply unit to connect to an external device through a connector to supply power comprises: the main unit having an internal part opened from an upper surface; a sunlight collection ...

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07-07-2015 дата публикации

METHOD AND APPARATUS FOR COMPENSATING LASER

Номер: KR1020150076895A
Принадлежит:

The present invention relates to a method and an apparatus for compensating a laser and, more specifically, to a method and an apparatus for compensating a laser, which compensates the energy intensity of the laser when radiating the laser on a substrate. According to an embodiment of the present invention, the method includes: an individual laser pulse measuring process of measuring a peak value of each individual laser pulse taking off from a plurality of laser light sources whose intensities are controlled by each individual damper; an individual damper incidence angle controlling process of controlling the incidence angles of the individual dampers assigned to the laser light sources which deviate from preset individual error ranges, if the measured peak values of the individual laser pulses deviate from the preset individual error ranges; and a step of continuing to measure the individual laser pulses and control the incidence angles of the individual dampers until the measured peak ...

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11-10-2018 дата публикации

METHOD FOR MANUFACTURING MOS CONTROLLED RECTIFIER MOS

Номер: KR1020180111449A
Принадлежит:

Disclosed is a method for manufacturing a MOS controlled rectifier, comprising the following steps of: forming an epitaxial layer of a first conductivity type on a substrate of the first conductivity type; forming well regions of a second conductivity type different from the first conductivity type in an upper part of the epitaxial layer; forming a gate insulating layer and a gate electrode on a part of the well regions and on the epitaxial layer between the well regions; forming an anode on the gate electrode and the well regions of both sides of the gate electrode; and forming a cathode on a lower part of the substrate. The step of forming the anode comprises the following steps of: forming a lower anode containing metal having Schottky contact for the well regions on the well regions and the gate electrode; and forming an upper anode on the lower anode. The purpose of the present invention is to provide a method for manufacturing a MOS controlled rectifier capable of improving productivity ...

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14-01-2019 дата публикации

사인파 모양의 도파관을 이용한 전자기파 상호작용 회로구조

Номер: KR1020190004680A
Принадлежит:

... 사인파 모양의 도파관을 이용한 전자기파 상호작용 회로는 단면도 상에서 사인파 형상을 갖는 사인파 형태 회로구조 상단, 상기 사인파 형태 회로구조 상단과 마주보며, 상기 사인파 형태 회로구조 상단과 동일한 형상을 갖는 사인파 형태 회로구조 하단, 상기 사인파 형태 회로구조 상단 및 상기 사인파 형태 회로구조 하단 사이에 배치되며, 일 방향으로 연장되는 선형의 시트 형상을 갖는 전자빔, 상기 사인파 형태 회로구조 상단의 외부에 배치되고, 상기 사인파 형태 회로구조 상단을 감싸는 회로 상단 컨덕팅 월 및 상기 사인파 형태 회로구조 하단의 외부에 배치되고, 상기 사인파 형태 회로구조 하단을 감싸는 회로 하단 컨덕팅 월을 포함한다.

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03-02-2016 дата публикации

Method for compensating laser and apparatus for operating the same

Номер: KR0101591490B1
Принадлежит: 에이피시스템 주식회사

... 본 발명은 레이저 보정 방법 및 장치로서, 기판에 레이저를 조사할 때 레이저의 에너지 세기를 보정하는 방법 및 장치에 관한 것이다. 본 발명의 실시 형태는 복수의 레이저 광원에서 발진되어 각각의 개별 감쇠기에 의해 세기 조절된 개별 레이저 펄스의 피크값을 각각 측정하는 개별 레이저 펄스 측정 과정; 측정되는 개별 레이저 펄스의 피크값이 미리 설정한 개별 오차 범위를 벗어난 경우, 오차 범위를 벗어난 레이저 광원에 할당된 개별 감쇠기의 입사각을 조절하는 개별 감쇠기 입사각 제어 과정; 측정되는 개별 레이저 펄스의 피크값이 미리 설정한 개별 오차 범위 내에 들어올 때까지, 상기 개별 레이저 펄스 측정 및 개별 감쇠기 입사각 제어를 반복하는 과정;을 포함한다.

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15-10-2015 дата публикации

BASE MOLD AND METHOD FOR MANUFACTURING MOLD

Номер: KR1020150116002A
Принадлежит:

The present invention relates to a base mold and a method for manufacturing a mold and, more specifically, to a method for manufacturing a mold, which includes: forming a first film and a second film, which are sequentially laminated on a substrate by being separated to each other; forming a first pattern by patterning the first film; forming a first spacer on both lateral walls of the first pattern; forming a second pattern by etching the first spacer and the second membrane by means of an etching mask; forming a laminating structure body including the first pattern and the second pattern on the substrate by removing the first spacer; and forming a mold membrane covering the laminating structure body. COPYRIGHT KIPO 2016 ...

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20-07-2018 дата публикации

MANIFOLD COVER FOR FASTENING ECU AND ASSEMBLING METHOD THEREOF

Номер: KR1020180083208A
Автор: PARK, GUN SIK
Принадлежит:

The present invention relates to a manifold cover for fastening an ECU, capable of connecting a plurality of electric wires, which are drawn out from a first bracket and a second bracket provided on one side of an ECU box installed in a vehicle, to a corrugated tube. The manifold cover according to the present invention includes: an L-joint for connecting a plurality of wires drawn from a first bracket to a first corrugated tube, in which a first body and a second body are coupled to each other by at least one first hook; and a T-joint for connecting a plurality of wires drawn from the first corrugated tube at the L-joint and a plurality of wires drawn from the second bracket to a second corrugated tube by binding the wires, in which a third body and a fourth body are connected to each other by at least one first hook. According to the present invention, power lines exposed between a bracket from which a plurality of power lines are drawn from an ECU box and an end portion of the corrugated ...

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