Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год

Применить Всего найдено 6. Отображено 6.
10-05-2012 дата публикации

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер: KR2012060619A2
Принадлежит:

The present invention relates to a semiconductor device which can emit light and a manufacturing method thereof, and more particularly, to a semiconductor device which is formed in a polygonal or circular cylindrical shape and can emit light, and a manufacturing method thereof. A semiconductor device of the present invention comprises a plurality of semiconductor structures and a connection support layer for supporting the plurality of semiconductor structures. Each of the plurality of semiconductor structures comprises a first P-type semiconductor layer, a second N-type semiconductor layer, and a light emitting layer positioned between the first semiconductor layer and the second semiconductor layer, and is formed in a polygonal or circular cylindrical shape.

Подробнее
26-03-2015 дата публикации

FURNACE TRANSFORMER CAPABLE OF PREVENTING INDUCTION HEAT

Номер: WO2015041485A1
Принадлежит:

The present invention relates to a furnace transformer capable of preventing induction heat by using an integrated insulation plate and paramagnetic shielding plate. The furnace transformer of the present invention has a plurality of phase bushings withdrawn outwards therefrom, includes an insulation plate forming a partial surface of the outside of the furnace transformer, wherein all the plurality of phase bushings are provided by passing through the insulation plate. The furnace transformer, according to the present invention, maximally prevents the induction heat generated on the surface of a tank close to a secondary side thereof, thereby reducing the overall size thereof.

Подробнее
07-11-2013 дата публикации

SEMICONDUCTOR ELEMENT PRODUCTION METHOD

Номер: WO2013165031A1
Принадлежит:

Disclosed is a semiconductor element production method. According to an embodiment of the present invention, the semiconductor element production method can comprise: a step of forming a semiconductor element layer for generating light by means of an electrical current; a step of forming one or more metal layer(s) for providing mechanical support on the semiconductor element layer; a first cutting step involving the cutting of the street line of the semiconductor element layer by means of a physical method or a chemical wet etching method; and a second cutting step involving the wet etching and cutting of metal that has not been plated with an etching protection layer present on the street line of the one or more metal layer(s). Here, in the step of forming the one or more metal layer(s), it is possible to suppress the side-surface corrosion (side etching) that occurs during semiconductor element separation via wet etching by including a step of forming, on the semiconductor element layer ...

Подробнее
03-02-2016 дата публикации

PERSIMMON DRYING MACHINE

Номер: KR1020160012687A
Принадлежит:

The present invention relates to a persimmon drying machine which comprises: a drying chamber having an outer wall and an inner wall; a hot air part arranged on the top of the drying chamber; a humidity control part arranged on the top of the drying chamber; and a control part controlling the hot air part and the humidity control part to control the temperature and humidity in the drying chamber by a full automatic method. The hot air circulation in the drying chamber is conducted more efficiently as the slit opening rate of the inner wall gets higher. In an aspect of installation, a standardized structure is adopted by modularizing the drying chamber, thereby allowing the extension and transfer of installations to be quickly and easily conducted, and also maximizing the space. In addition, the persimmon drying machine can be replaced with persimmon drying machines of various sizes, and also competitiveness is enhanced due to low installation costs. In an aspect of use, hot air supplied ...

Подробнее
14-10-2016 дата публикации

감 건조기

Номер: KR0101666054B1
Принадлежит: (재)대구기계부품연구원, 박무근

... 본 발명은 감 건조기에 관한 것으로, 그 구성은 외벽과 내벽을 구비한 건조실; 상기 건조실 상면에 구비된 열풍부; 상기 건조실 상면에 구비된 습도조절부; 및 상기 열풍부와 상기 습도조절부를 제어하여 상기 건조실 내부의 온도와 습도를 전자동으로 조절하기 위한 제어부를 포함하여 이루어지고, 내벽의 슬릿 개구율이 높아짐에 따라 건조기 내부의 열풍 순환이 더욱 효율적인 것을 특징으로 한다. 이에 따라 본 발명은, 설치에 있어 건조실을 모듈화시켜 규격화된 구조를 채택함에 따라 증설 및 이설이 신속 원활하면서 공간을 최대한 활용 가능함과 함께 다양한 규격으로 대체 가능하면서 설치비가 저렴하여 경쟁력을 높이고, 사용에 있어 건조실내로 공급하는 열풍을 순환 공급함은 물론 순환된 열풍을 재차 유입하여 원활한 흐름을 유도함과 함께 습기를 자동으로 배출하도록 구성함에 따라, 감이 전체적으로 균일하게 건조되어 품질과 생산성을 향상하고 열손실이 적어 유지비용이 저렴한 효과가 있다.

Подробнее
10-05-2012 дата публикации

SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

Номер: WO2012060619A3
Принадлежит:

The present invention relates to a semiconductor device which can emit light and a manufacturing method thereof, and more particularly, to a semiconductor device which is formed in a polygonal or circular cylindrical shape and can emit light, and a manufacturing method thereof. A semiconductor device of the present invention comprises a plurality of semiconductor structures and a connection support layer for supporting the plurality of semiconductor structures. Each of the plurality of semiconductor structures comprises a first P-type semiconductor layer, a second N-type semiconductor layer, and a light emitting layer positioned between the first semiconductor layer and the second semiconductor layer, and is formed in a polygonal or circular cylindrical shape.

Подробнее