27-06-2016 дата публикации
Номер: KR1020160073923A
Принадлежит:
The present invention provides a thin-film transistor array substrate capable of preventing degradation of a device and improving reliability thereof. According to an embodiment of the present invention, the thin-film transistor array substrate includes an active layer, an intermediate layer, a gate insulating film, a gate electrode, an interlayer insulating film, a source electrode, and a drain electrode. The active layer is disposed on a substrate, and the gate insulating film is disposed on the active layer. The gate electrode is disposed on the gate insulating film, and the interlayer insulating film is disposed on the gate electrode. The source electrode and the drain electrode are disposed on the interlayer insulating film and are connected to the active layer. The intermediate layer is disposed between the active layer and the gate insulating film and is made of an oxide semiconductor including a group-IV element. COPYRIGHT KIPO 2016 (AA) Oxygen non-bonded state (BB) Electron collection ...
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