Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 8. Отображено 8.
09-07-2018 дата публикации

PEROVSKITE COMPOUND AND PRODUCTION METHOD THEREOF, AND SOLAR CELL INCLUDING PEROVSKITE COMPOUND AND PRODUCTION METHOD THEREOF

Номер: KR1020180077402A
Автор: SONG, MYUNG KWAN, SHIN, JONG MOON, KIM, CHANG SU
Принадлежит:

Disclosed is a perovskite compound which ensures high efficiency. According to one aspect of the present invention, the perovskite compound is represented by following chemical formula, X_3Sb_2Y_9, X = FA(CH(NH_2)_2), MA(CH_3NH_2), Cs, Rb, Na, K, Li, Y = F, I, Br, Cl. COPYRIGHT KIPO 2018 ...

Подробнее
Номер записи: 1
15-01-2019 дата публикации

1-3-10 구조의 페로브스카이트 화합물 및 그 제조방법, 1-3-10 구조의 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법

Номер: KR1020190005018A
Автор: 송명관, 신종문, 정수정
Принадлежит:

... 페로브스카이트 화합물 및 그 제조방법, 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법이 개시된다. 본 발명의 일 측면에 따르면, 하기의 화학식으로 표시되고, 삼사정계(triclinic)의 결정 구조를 이루는 페로브스카이트 화합물이 제공된다. [화학식] A1B3C10 A=FA(CH(NH2)2), MA(CH3NH2), Cs, Rb, Na, K, Li 중 하나 B=Bi, Sb 중 하나 C=F, I, Br, Cl 중 하나 ...

Подробнее
Номер записи: 2
15-01-2019 дата публикации

1-2-7 구조의 페로브스카이트 화합물 및 그 제조방법, 1-2-7 구조의 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법

Номер: KR1020190005025A
Автор: 송명관, 신종문, 정수정
Принадлежит:

... 페로브스카이트 화합물 및 그 제조방법, 페로브스카이트 화합물을 포함하는 태양전지 및 그 제조방법이 개시된다. 본 발명의 일 측면에 따르면, 하기의 화학식으로 표시되는 페로브스카이트 화합물이 제공된다. [화학식] A1B2C7 A=FA(CH(NH2)2), MA(CH3NH2), Cs, Rb, Na, K, Li 중 하나 B=Bi, Sb 중 하나 C=F, I, Br, Cl 중 하나 ...

Подробнее
Номер записи: 3
03-01-2014 дата публикации

ZINC OXIDE-BASED P-TYPE SEMICONDUCTOR THIN FILM USING HYDROGEN, AND METHOD FOR MANUFACTURING SAME

Номер: WO2014003445A1
Автор: JEONG, Se-young, SHIN, Jong-moon, CHO, Yong-chan, PARK, Sang-eon, CHO, Chae-ryong, LEE, Seung-hun
Принадлежит:

The present invention relates to a zinc oxide-based p-type semiconductor thin film using hydrogen and to a method for manufacturing same. The technical idea of the present invention pertains to a method for manufacturing a zinc oxide-based p-type semiconductor thin film using hydrogen, comprising: a thin film deposition step of depositing a Zn1-XMXO (0.07≤x≤0.2) zinc oxide-based thin film doped with a transition metal (M) onto a substrate; a metal layer forming step of depositing a metal thin film on the zinc oxide-based thin film from the thin film deposition step; and a hydrogen injection step of feeding a mixture gas containing hydrogen to the substrate on which the zinc oxide-based thin film and the metal thin film have been formed so as to feed hydrogen to the zinc oxide-based thin film after the metal layer forming step. Further, the technical idea of the present invention pertains to a zinc oxide-based p-type semiconductor thin film using hydrogen, comprising: a substrate; a Zn1- ...

Подробнее
Номер записи: 4
14-04-2022 дата публикации

GROUP III-V BASED QUANTUM DOTS HAVING GROWTH LAYER AND MANUFACTURING METHOD THEREFOR

Номер: WO2022075720A1
Автор: BANG, Eun Byul, LEE, Chang Min, SHIN, Jong Moon, LEE, Hyung Dong, PARK, Jong Nam, CHOI, Yong Hoon, KIM, Kang Yong
Принадлежит:

A manufacturing method for quantum dots according to the present invention comprises: a seed forming step of forming seeds containing a group III element and a group V element; an oxidation inhibiting step of inhibiting oxidation of the surface of the seeds by introduction of a surface oxidation inhibitor, after the seed forming step; and a growth layer forming step of forming, on the seeds, a growth layer containing a group III element and a group V element or a growth layer containing a group III element, an additional element, and a group V element, after the oxidation inhibiting step.

Подробнее
Номер записи: 5
09-07-2018 дата публикации

PEROVSKITE COMPOUND AND MANUFACTURING METHOD THEREOF, AND SOLAR CELL HAVING PEROVSKITE COMPOUND AND MANUFACTURING METHOD THEREOF

Номер: KR1020180077404A
Автор: SONG, MYUNG KWAN, SHIN, JONG MOON, KIM, CHANG SU
Принадлежит:

A perovskite compound is disclosed. According to an aspect of the present invention, the perovskite compound can be displayed as the following chemical formula, X_3Bi_2Y_9, X = MA, FA(CH(NH_2)_2), Cs, Rb, K, Na, Li, Y = F, I, Br, Cl. By using the perovskite compound and a manufacturing method thereof, a high efficient solar cell and a manufacturing method thereof are provided. COPYRIGHT KIPO 2018 ...

Подробнее
Номер записи: 6
05-07-2018 дата публикации

PEROVSKITE COMPOUND AND PREPARATION METHOD THEREFOR, AND SOLAR CELL COMPRISING PEROVSKITE COMPOUND AND MANUFACTURING METHOD THEREFOR

Номер: WO2018124459A1
Автор: SONG, Myung Kwan, SHIN, Jong Moon, JUNG, Su Jeong, KIM, Chang Su
Принадлежит:

A perovskite compound of the present invention is represented by the following chemical formula. [Chemical formula] XaYbZc, X = one of FA(CH(NH2)2), MA(CH3NH2), Cs, Rb, Na, K, and Li; Y = one of Bi and Sb; Z = one of F, I, Br, and C1; 0.5 Подробнее

Номер записи: 7
14-04-2022 дата публикации

GROUPS III-V-BASED QUANTUM DOTS AND METHOD FOR PRODUCING SAME

Номер: WO2022075719A1
Автор: BANG, Eun Byul, LEE, Chang Min, SHIN, Jong Moon, LEE, Hyung Dong, PARK, Jong Nam, CHOI, Yong Hoon, KIM, Kang Yong
Принадлежит:

Disclosed in the present invention are groups III-V-based quantum dots and a method for producing same, the quantum dots according to the present invention being groups III-V-based quantum dots comprising: a seed containing group III elements and group V elements; and a metal layer wrapped around the outer surface of the seed, the metal layer being thinner than the radius of the seed and made of one or more metal elements selected from the group consisting of Al, Ti, Mg, Na, Li, F, Zr, Sn, and Cu.

Подробнее
Номер записи: 8