06-10-2016 дата публикации
Номер: KR1020160114750A
Принадлежит:
The present invention relates to a wafer level semiconductor package and a manufacturing method thereof. More specifically, the present invention relates to a wafer level chip size/scale semiconductor package which improves an under bump metal structure, where an input/output port is fused, as a structure capable of dispersing and buffering external stress newly, and the manufacturing method thereof. That is, the present invention is to provide the wafer level semiconductor package which can improve bonding force of an under bump metal layer as to a bonding pad of a semiconductor chip and bonding force between the under bump metal layer and the input/output port, by improving the under bump metal layer formed on the bonding pad of the semiconductor chip as the structure capable of removing the external stress by dispersing the external stress, and plating the input/output port, a solder, on the under bump metal layer, and the manufacturing method thereof. COPYRIGHT KIPO 2016 ...
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