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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 15. Отображено 15.
16-07-2015 дата публикации

MAGNETIC TUNNEL JUNCTION STRUCTURE WITH PERPENDICULAR MAGNETIC ANISOTROPY

Номер: KR101537469B1
Автор: HONG, JIN PYO, AN, GWANG GUK
Принадлежит: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

A magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy is provided. The MTJ structure with the perpendicular magnetic anisotropy comprises: a first seed layer which is formed of a multi-thin film wherein a first nonmagnetic material and a diffusion prevention material are repeatedly layered by turns; a second seed layer which is located on the first seed layer and includes a second nonmagnetic material; a first ferromagnetic layer which is located on the second seed layer and has perpendicular magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer which is located on the tunneling barrier layer and has perpendicular magnetic anisotropy. The diffusion prevention material is combined to the first and second nonmagnetic materials to prevent the first and second nonmagnetic materials from being thermally diffused to the first ferromagnetic layer at a temperature of 350°C to 400°C. Thus, the crystalline ...

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Номер записи: 1
27-10-2015 дата публикации

Multi Snow Melting Block

Номер: KR0101563493B1
Автор: 안광국, 배우석, 이처근
Принадлежит: 충북대학교 산학협력단

... 본 발명은 통전효과가 우수하고, 유지 관리가 유리한 융설 블록을 제공하고자 한 것이다. 이를 위해, 본 발명은 외관을 이루며 하측에 수용부가 구비된 블록몸체부와, 상기 블록몸체부 수용부에 구비되는 열전달부와, 상기 열전달부 내측에 구비되는 발열부 및 상기 발열부를 덮어 감싸는 형태로 상기 열전달부 내측에 구비되는 절연부를 포함하는 다기능 융설 블록을 제공한다.

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Номер записи: 2
05-08-2016 дата публикации

MAGNETIC TUNNEL JUNCTION STRUCTURE WITH PERPENDICULAR MAGNETIC ANISOTROPY AND MAGNETIC ELEMENT INCLUDING SAME

Номер: KR1020160092545A
Автор: HONG, JIN PYO, AN, GWANG GUK
Принадлежит:

Provided is a magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy. The magnetic tunnel junction (MTJ) structure with perpendicular magnetic anisotropy includes a substrate; a neighbor metal layer placed on the substrate and including a metal material able to be combined with an element B; a first ferromagnetic layer with perpendicular magnetic anisotropy placed on the neighbor metal layer and having a ferromagnetic material including the element B; a tunneling barrier layer placed on the first ferromagnetic layer; and a second ferromagnetic layer with perpendicular magnetic anisotropy placed on the tunneling barrier layer. The MTJ structure further includes a selective diffusion preventing layer interposed between the neighbor metal layer and the first ferromagnetic layer to prevent a metal material of the neighbor metal layer from being diffused into the first ferromagnetic layer and allow the element B of the first ferromagnetic layer to be diffused into the ...

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Номер записи: 3
10-10-2016 дата публикации

수직자기이방성을 갖는 MTJ 구조

Номер: KR0101661389B1
Автор: 홍진표, 안광국
Принадлежит: 한양대학교 산학협력단

... 수직자기이방성을 갖는 MTJ 구조를 제공한다. 수직자기이방성을 갖는 MTJ 구조는 비자성물질 및 확산방지물질을 포함하는 합금박막으로 구성된 씨앗층, 상기 씨앗층 상에 위치하고, 수직자기이방성을 갖는 제1 강자성층, 상기 제1 강자성층 상에 위치하는 터널링 배리어층 및 상기 터널링 배리어층 상에 위치하는 수직자기이방성을 갖는 제2 강자성층을 포함할 수 있다. 또한, 이때의 확산방지물질은 상기 비자성물질과의 결합에너지가 8.2 eV/atom 이상인 물질일 수 있다. 따라서, 고온에서도 열적 안정성이 향상된 수직자기이방성을 갖는 MTJ 구조를 제공할 수 있다.

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Номер записи: 4
08-12-2015 дата публикации

MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020150136710A
Автор: HONG, JIN PYO, LEE, JA BIN, AN, GWANG GUK
Принадлежит:

Provided are a magnetic tunnel junction device and a method for manufacturing the same. The magnetic tunnel junction device comprises: a seed layer having a face centered cubic (FCC) (001) crystal structure; a first ferromagnetic layer positioned on the seed layer and having vertical magnetic anisotropy; a tunneling barrier layer positioned on the first ferromagnetic layer; and a second ferromagnetic layer positioned on the tunneling barrier layer and having the vertical magnetic anisotropy. The first ferromagnetic layer has the BCC (001) crystal structure, and does not include boron. Accordingly, the seed layer, which is a magnetic layer material to help crystal growth in the BCC (001) direction of the boron-free magnetic layer and allows to have the vertical magnetic anisotropy, and a lattice constant are similar, and W2N or TaN, which has a cubic crystal structure and is a nitrogen-dopped metal material, is used, thereby providing the magnetic tunnel junction device which is more structurally ...

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Номер записи: 5
04-05-2018 дата публикации

SPIN-SYNAPSE DEVICE STORING MULTI-BIT AND OPERATING METHOD THEREOF

Номер: KR1020180045308A
Автор: HONG, JIN PYO, AN, GWANG GUK
Принадлежит:

The present invention relates to a structure for a spin-synapse device storing multi-bit and a manufacturing method. It is possible to realize multi-bit of magnetic tunnel junction (MTJ) by applying a multi-axis anisotropic free layer to a spin-synapse device. Since the magnitude of resistance can be adjusted according to the angle of the pinned layer and the free layer, application of multi-bit is facilitated and application to artificial synapse technology is possible. The spin synapse device includes an electrode, a pinned layer, a tunnel barrier layer, and a second electrode. COPYRIGHT KIPO 2018 ...

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Номер записи: 6
03-08-2018 дата публикации

수직자기이방성을 갖는 MTJ 구조 및 이를 포함하는 자성소자

Номер: KR0101874171B1
Автор: 홍진표, 안광국
Принадлежит: 한양대학교 산학협력단

... 수직자기이방성을 갖는 MTJ 구조 및 이를 포함하는 자성소자를 제공한다. 수직자기이방성을 갖는 MTJ 구조는 기판, 상기 기판 상에 위치하되, 산화물계 물질을 포함하는 수직자기이방성 유도층, 상기 수직자기이방성 유도층 상에 위치하되, 반강자성물질을 포함하는 수직반강자성층, 상기 수직반강자성층 상에 위치하되, 수직자기이방성을 갖는 제1 강자성층, 상기 제1 강자성층 상에 위치하는 터널링 배리어층 및 상기 터널링 배리어층 상에 위치하되, 수직자기이방성을 갖는 제2 강자성층을 포함한다. 따라서, 상기 수직반강자성층은 상기 수직자기이방성 유도층과의 계면에서 수직적 상호작용이 발생됨으로써, 상기 수직반강자성층 및 상기 제1 강자성층 간에도 수직적 상호작용이 발생되는 것을 특징으로 한다.

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Номер записи: 7
02-07-2015 дата публикации

COATING METHOD

Номер: KR101532900B1
Автор: NAM, JAE WOOK, AHN, KWANG GUK
Принадлежит: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Disclosed is a coating method. The coating method comprises the steps of: forming a coating composition including a solvent which is separated into an upper solvent and a lower solvent, and a coating material which is dissolved or dispersed in the lower solvent; immersing a substrate into the lower solvent; and taking out the substrate to the outside of the coating composition via the upper solvent so as to coat the substrate with the coating material. According to the present invention, a drying process using a drying apparatus can be omitted, thereby saving costs and times for the coating processes. COPYRIGHT KIPO 2015 (AA) Start (BB) End (S110) Step of forming a coating composition including a solvent which is separated into an upper solvent and a lower solvent, and a coating material which is dissolved in or distributed to the lower solvent (S120) Step of immersing a substrate into the lower solvent (S130) Step of taking out the substrate to the outside of the coating composition via ...

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Номер записи: 8
07-09-2018 дата публикации

MTJ STRUCTURE HAVING PERPENDICULAR MAGNETIC ANISOTROPY AND MAGNETIC ELEMENT INCLUDING SAME

Номер: WO2017164646A3
Автор: HONG, Jinpyo, AN, Gwangguk
Принадлежит:

Provided are an MTJ structure having perpendicular magnetic anisotropy and a magnetic element including the same. The MTJ structure having perpendicular magnetic anisotropy comprises: a substrate; a perpendicular magnetic anisotropy-inducing layer disposed on the substrate and containing an oxide-based material; a perpendicular antiferromagnetic layer disposed on the perpendicular magnetic anisotropy-inducing layer and containing an antiferromagnetic material; a first ferromagnetic layer disposed on the perpendicular antiferromagnetic layer and having perpendicular magnetic anisotropy; a tunneling barrier layer disposed on the first ferromagnetic layer; and a second ferromagnetic layer disposed on the tunneling barrier layer and having perpendicular magnetic anisotropy. Therefore, a perpendicular interaction is generated at the interface between the perpendicular antiferromagnetic layer and the perpendicular magnetic anisotropy-inducing layer, and thus a perpendicular interaction is also ...

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Номер записи: 9
05-09-2018 дата публикации

FLEXIBLE AND STRETCHABLE ELECTRODE AND MANUFACTURING METHOD THEREOF

Номер: KR1020180098777A
Автор: LIM, BYUNG KWON, NAM, JAE WOOK, LIM, GUH HWAN, AN, KWANG KOOK
Принадлежит:

The present invention relates to a flexible and stretchable electrode and a manufacturing method thereof. The manufacturing method of a flexible and stretchable electrode comprises the steps of: dispersing metal nanowires in a volatile organic solvent; spraying the organic solvent in which the metal nanowires are dispersed on a substrate to manufacture a curved or circular shaped film containing the metal nanowires; and forming a polymer on the metal nanowire-containing film. COPYRIGHT KIPO 2018 (S100) Dispersing metal nanowires in a solvent (S200) Producing a metal nanowire-containing film in a curved or circular shape (S300) Forming a polymer on the metal nanowire-containing film ...

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Номер записи: 10
13-10-2017 дата публикации

MTJ STRUCTURE WITH PERPENDICULAR MAGNETIC ANISOTROPY AND MAGNETIC ELEMENT INCLUDING SAME

Номер: KR1020170113717A
Автор: HONG, JIN PYO, AN, GWANG GUK
Принадлежит:

An MTJ structure having perpendicular magnetic anisotropy and a magnetic element including the same are provided. The MTJ structure having perpendicular magnetic anisotropy includes a substrate, a perpendicular magnetic anisotropic inductive layer which is disposed on the substrate and includes an oxide-based material, a perpendicular antiferromagnetic layer which is positioned on the perpendicular magnetic anisotropy inductive layer and includes an antiferromagnetic material, a first ferromagnetic layer which is located on the perpendicular antiferromagnetic layer and has perpendicular magnetic anisotropy, a tunneling barrier layer which is positioned on the first ferromagnetic layer, and a second ferromagnetic layer which is positioned on the tunneling barrier layer and has perpendicular magnetic anisotropy. Therefore, perpendicular interaction is generated between the perpendicular antiferromagnetic layer and the perpendicular magnetic anisotropy inductive layer, so that perpendicular ...

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Номер записи: 11
08-01-2019 дата публикации

유연 신축 전극 및 이의 제조방법

Номер: KR0101936118B1
Автор: 임병권, 남재욱, 임거환, 안광국
Принадлежит: 성균관대학교산학협력단

... 금속 나노와이어를 휘발성 유기용매에 분산시키는 단계; 상기 금속 나노와이어가 분산된 유기용매를 기판 상에 분사하여 곡선 또는 원형 형상의 금속 나노와이어 함유 필름을 제조하는 단계; 및 상기 금속 나노와이어 함유 필름 상에 고분자를 형성하는 단계를 포함하는 유연 신축 전극의 제조방법에 관한 것이다.

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Номер записи: 12
03-12-2015 дата публикации

MAGNETIC TUNNEL JUNCTION ELEMENT AND MANUFACTURING METHOD THEREFOR

Номер: WO2015182889A1
Автор: HONG, Jinpyo, LEE, Jabin, AN, Gwangguk
Принадлежит:

A magnetic tunnel junction element and a manufacturing method therefor are provided. The magnetic tunnel junction element comprises: a seed layer having an FCC (001) crystal structure; a first ferromagnetic layer located on the seed layer and having perpendicular magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer and having perpendicular magnetic anisotropy, wherein the first ferromagnetic layer has a BCC (001) crystal structure and does not include boron. Therefore, the magnetic tunnel junction element, which is more stable in terms of structure and heat, can be provided by using the seed layer for assisting the growth of crystals in a BCC (001) direction of a boron-free magnetic layer and for providing perpendicular magnetic anisotropy thereto, that is, W2N or TaN which is a nitrogen-doped metal material having a cubic crystal structure and having a similar lattice constant to ...

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Номер записи: 13
28-09-2017 дата публикации

MTJ STRUCTURE HAVING PERPENDICULAR MAGNETIC ANISOTROPY AND MAGNETIC ELEMENT INCLUDING SAME

Номер: WO2017164646A2
Автор: HONG, Jinpyo, AN, Gwangguk
Принадлежит:

Provided are an MTJ structure having perpendicular magnetic anisotropy and a magnetic element including the same. The MTJ structure having perpendicular magnetic anisotropy comprises: a substrate; a perpendicular magnetic anisotropy-inducing layer disposed on the substrate and containing an oxide-based material; a perpendicular antiferromagnetic layer disposed on the perpendicular magnetic anisotropy-inducing layer and containing an antiferromagnetic material; a first ferromagnetic layer disposed on the perpendicular antiferromagnetic layer and having perpendicular magnetic anisotropy; a tunneling barrier layer disposed on the first ferromagnetic layer; and a second ferromagnetic layer disposed on the tunneling barrier layer and having perpendicular magnetic anisotropy. Therefore, a perpendicular interaction is generated at the interface between the perpendicular antiferromagnetic layer and the perpendicular magnetic anisotropy-inducing layer, and thus a perpendicular interaction is also ...

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Номер записи: 14
03-09-2015 дата публикации

MULTIFUNCTIONAL SNOW MELTING BLOCK

Номер: KR1020150101120A
Автор: AHN, KWANG KUK, BAE, WOO SEOK, LEE, CHEO KEUN
Принадлежит:

The present invention provides a snow melting block which has excellent energization effects and is easy to maintenance. To achieve this, the snow melting block comprises: a block body part to form the outer shape, wherein an accepting part is provided at the bottom; a heat transfer part provided in the accepting part of the block body part; a heating part provided inside the heat transfer part; and an insulating part provided inside the heat transfer part to cover and surround the heating part. COPYRIGHT KIPO 2015 ...

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Номер записи: 15