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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 24. Отображено 24.
04-12-2015 дата публикации

slot die and method for manufacturing organic solar cell

Номер: KR0101574592B1
Автор: 김광수, 오철, 변창완
Принадлежит: 코오롱인더스트리 주식회사, 주식회사 디씨엔

... 본 발명은 연속 공급되는 기판에 소재를 도포하는 슬롯 다이에 관한 것으로, 상기 소재가 유입될 수 있는 챔버와 상기 챔버를 상기 기판 방향으로 연통시킨 적어도 하나의 유로가 형성된 하우징 및 상기 적어도 하나의 유로와 동일 선상에 위치하고 상기 기판 방향으로 돌출되어 상기 적어도 하나의 유로에서 배출되는 소재를 펼치는 적어도 하나의 돌출부를 포함한다.

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Номер записи: 1
23-03-2017 дата публикации

METHOD FOR PREPARING GRAPHENE USING EUTECTIC GRAPHITE

Номер: KR1020170032655A
Автор: OH, CHUL, LEE, HYOONG YOON, JANG, KANG IL, LEE, HYUN WOO, HAN, DONG YUN, KIM, MI SUN
Принадлежит:

The present invention relates to a method for preparing graphene using eutectic graphite. The method according to the present invention comprises the steps of: 1) sintering mixed powder containing a metal and graphite to obtain a sintered body containing diamond and unreacted graphite; 2) dipping the sintered body into a strong acid to which potassium permanganate (KMnO_4) is added and carrying out electrolysis to convert the same into a mixture containing diamond and graphite; 3) exfoliating graphite in the mixture; 4) recovering the exfoliated graphene oxide; and 5) reducing the recovered graphene oxide. According to the present invention, it is possible to carry out pretreatment of graphite in a process for preparing graphene while carrying out a process for producing diamond, and thus to simplify the overall process and to reduce the cost required for carrying out the pretreatment and process. In addition, according to the present invention, eutectic graphite which is a byproduct discarded ...

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Номер записи: 2
01-09-2015 дата публикации

APPARATUS FOR CONTROLLING SAFE DRIVING OF VEHICLE USING BRAIN WAVE SIGNAL AND METHOD THEREFOR

Номер: KR101548868B1
Автор: OH, CEOL, IM, SEOK JAE, KANG, SUN JUO, JEON, IN SU, MOON, MYOUNG GEUN, PARK, CHAN YOUNG, KIM, JI SEONG
Принадлежит: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY

The present invention relates to an apparatus for controlling safe driving of a vehicle using a brain wave signal and a method therefor. The present invention comprises: a brain wave extractor measuring a brain wave from a driver to generate a brain wave signal in real-time; a storage unit where driver state range information displaying the information which can classify a state of a driver as one state among the states and a delta wave value of alcohol concentration are pre-stored; a vehicle control unit controlling a vehicle audio and a vehicle emergency light and ignition; and a control unit generating a brain wave signal through the brain wave extractor and extracting the brain wave signals from the generated brain wave signal, respectively and calculating an average value of the extracted brain wave signals and determining the state of the driver as one state among the states based on the calculated average value and the driver state range information and generating the vehicle control ...

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Номер записи: 3
25-01-2018 дата публикации

VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FORMING SAME

Номер: KR1020180008992A
Автор: LEE, JA BIN, PARK, JEONG HEE, AHN, DONG HO, WU ZHE, SHIN, HEE JU, LEE, JIN WOO
Принадлежит:

A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes first conductive lines extended in a first direction, second conductive lines extended in a second direction intersecting the first direction, and memory cells provided at intersections between the first conductive lines and the second conductive lines, respectively. Each of the memory cells has a switching element connected in series between the first conductive line and the second conductive line connected thereto, and a variable resistance structure. The switching device includes an insulative impurity and a chalcogenide material. The reliability of the variable resistance memory device can be improved. COPYRIGHT KIPO 2018 ...

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Номер записи: 4
05-01-2012 дата публикации

ORGANIC SOLAR CELL AND MANUFACTURING METHOD THEREOF

Номер: KR2012002694A2
Автор: AHN, Tae Hwan, HAN, Jung Seok, OH, Chul
Принадлежит:

The present invention relates to an organic solar cell and a manufacturing method thereof, comprising: a cathode and an anode facing each other; a photoactive layer which is positioned between the cathode and the anode and is mixed with a hole acceptor and an electron acceptor; and a metal oxide nano thin film which is positioned between the anode and the photoactive layer and includes a metal oxide having an average particle diameter less than or equal to 10nm. In the metal oxide, the particle diameter distribution greater than or equal to 90(number)% with respect to the total number of metal oxide particles is ±4nm on the basis of the average particle diameter. The organic solar cell enhances the efficiency of the organic solar cell by increasing the transfer velocity of holes and can improve the lifetime of the organic solar cell by suppressing the permission of oxygen and moisture from the outside to prevent the reduction of the photoactive performance of the polymer included in the ...

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Номер записи: 5
30-10-2015 дата публикации

A METHOD OF PREPARING METAL THIN FILM

Номер: KR0101564226B1
Автор: 한정석, 오철, 갈진하, 김광수, 안태환
Принадлежит: 코오롱인더스트리 주식회사

... 본 발명은 금속 박막 형성 방법에 관한 것으로, 금속 입자, 금속 전구체 입자, 금속 이온 및 이들의 조합으로 이루어진 군에서 선택된 어느 하나를 포함하는 조성물을 정전분무증착 코팅법으로 코팅하는 단계를 포함하는 금속 박막 형성 방법에 관한 것이다. 또한, 본 발명은 서로 대향 배치되는 음극 및 양극을 형성하는 단계; 및 상기 음극 및 양극 사이에 위치하는 광활성층을 형성하는 단계를 포함하며 상기 음극은 금속 입자를 정전분무증착 코팅법으로 코팅하여 음극을 형성하는 단계를 포함하는 유기 태양 전지의 제조 방법에 관한 것이다. 상기 유기 태양 전지의 제조방법은 양극을 형성하는 단계; 상기 양극에 광활성층을 형성하는 단계; 및 상기 광활성층에 금속 입자를 정전분무증착 코팅법으로 코팅하여 음극을 형성하는 단계를 포함하는 것일 수 있다. 본 발명의 금속 박막을 형성하는 방법은 기존 금속 박막 형성 방법이 갖는 문제점인 금속 전극을 건조하는 데 과도한 시간이 소요되고, 건조 장치와 같은 고가이고 부피가 큰 장치가 요구되는 단점을 해결하면서도, 저점도의 금속 입자를 포함하는 조성물을 이용하여 박막을 형성할 수 있으므로 취급이 용이하고, 적은 량의 금속 입자, 금속 전구체 입자 또는 금속 이온을 이용하여 기존 코팅 방법과 동일한 효과를 낼 수 있는 장점을 갖는다.

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Номер записи: 6
23-03-2017 дата публикации

METHOD FOR PREPARING GRAPHENE BY USING EUTECTIC GRAPHITE

Номер: WO2017048026A1
Автор: OH, Chul, LEE, Hyoong Yoon, JANG, Kang Il, LEE, Hyun Woo, HAN, Dong Yun, KIM, Mi Sun
Принадлежит:

The present invention relates to a method for preparing graphene by using eutectic graphite. According to the present invention, the method for preparing graphene by using eutectic graphite comprises: a first step of preparing a sintered body, comprising diamond and unreacted graphite, by sintering a mixture powder comprising a metal and graphite; a second step of converting, by dipping the sintered body in a strong acid containing potassium permanganate (KMnO4) and carrying out electrolysis on the same into a mixture comprising diamond and graphite; a third step of stripping graphite within the mixture; a fourth step of recovering stripped graphene oxide; and a fifth step of reducing the recovered graphene oxide. According to the present invention, a process can be reduced by simultaneously carrying out a graphite pre-treatment step of in a process for preparing graphene and a process for preparing diamond, and thus there are effects of reducing reagents costs, which are required for pre-treatment ...

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Номер записи: 7
08-10-2018 дата публикации

MEMORY DEVICE

Номер: KR1020180109287A
Автор: AHN, DONG HO, WU ZHE, PARK, SOON OH, HORII HIDEKI
Принадлежит:

Disclosed is a memory device, which comprises: a variable resistance layer; and a selection device layer positioned to be electrically connected to the variable resistance layer, and including a chalcogenide switching material having a composition represented by chemical formula 1, [Ge_ASe_BTe_C]_(1-U)[X]_U, wherein 0.20 <= A <=0.40, 0.40 <= B <=0.70, 0.05 <= C <= 0.25, A+B+C = 1, 0.0 <= U <= 0.20, and X is at least one species selected from the group consisting of boron (B), carbon (C), nitrogen (N), oxygen (O), phosphorus (P), and sulfur (S). COPYRIGHT KIPO 2018 ...

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Номер записи: 8
05-01-2012 дата публикации

ORGANIC SOLAR CELL AND MANUFACTURING METHOD THEREOF

Номер: WO2012002694A3
Автор: AHN, Tae Hwan, HAN, Jung Seok, OH, Chul
Принадлежит:

The present invention relates to an organic solar cell and a manufacturing method thereof, comprising: a cathode and an anode facing each other; a photoactive layer which is positioned between the cathode and the anode and is mixed with a hole acceptor and an electron acceptor; and a metal oxide nano thin film which is positioned between the anode and the photoactive layer and includes a metal oxide having an average particle diameter less than or equal to 10nm. In the metal oxide, the particle diameter distribution greater than or equal to 90(number)% with respect to the total number of metal oxide particles is ±4nm on the basis of the average particle diameter. The organic solar cell enhances the efficiency of the organic solar cell by increasing the transfer velocity of holes and can improve the lifetime of the organic solar cell by suppressing the permission of oxygen and moisture from the outside to prevent the reduction of the photoactive performance of the polymer included in the ...

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Номер записи: 9
03-11-2016 дата публикации

METHOD FOR PRODUCING GRAPHENE

Номер: KR1020160127237A
Автор: OH, CHUL
Принадлежит:

The present invention relates to a method for producing graphene. The method according to the present invention comprises the steps of: causing graphite to absorb a strong acid to form a slurry; introducing an aqueous potassium permanganate (KMnO_4) solution to the slurry, followed by agitation; carrying out exfoliation of the slurry; and reducing the slurry. According to the present invention, it is possible to increase the interlayer spacing of graphene through oxidation of graphite, to minimize the amount of sulfuric acid introduced during a process of inserting an oxygen functional group and thus to minimize the reaction of sulfuric acid (H_2SO_4) and potassium permanganate (KMnO_4), thereby minimizing a risk of explosion. COPYRIGHT KIPO 2016 (S100) Absorb sulfuric acid grapht to graphite to form slurry (S200) Introduce aqueous potassium permanganate solution (S300) Exfoliate graphite slurry (S400) Reduce exfoliated graphite slurry ...

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Номер записи: 10
20-04-2016 дата публикации

PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR DEPOSITING PHASE-CHANGE MATERIALS USING SAME

Номер: KR1020160042570A
Автор: WU ZHE, PARK, JUNG HWAN, PARK, JEONG HEE, AHN, DONG HO
Принадлежит:

Provided are a physical vapor deposition apparatus and a method for depositing phase-change materials using the same. The physical vapor deposition includes a process chamber including a loading chamber to load a substrate to be deposited, and a depositing chamber to deposit a phase-change material on the substrate; a target disposed on an upper portion of the depositing chamber, and reacting with process gas in a plasma state to provide ion particles of the phase-change material; a plasma generator to excite a process gas supplied into the depositing chamber while the process gas is in a plasma state; a substrate supporter disposed on a lower portion of the depositing chamber corresponding to the target, fixing the substrate onto the top surface thereof, and including a heater to heat the substrate and at least one electrode to induce the ion particles of the phase-change material to the substrate; and a supplementary heat source provided in the process chamber, and transferring radiant ...

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Номер записи: 11
05-01-2012 дата публикации

ORGANIC SOLAR CELL AND MANUFACTURING METHOD THEREOF

Номер: WO2012002694A4
Автор: AHN, Tae Hwan, HAN, Jung Seok, OH, Chul
Принадлежит:

The present invention relates to an organic solar cell and a manufacturing method thereof, comprising: a cathode and an anode facing each other; a photoactive layer which is positioned between the cathode and the anode and is mixed with a hole acceptor and an electron acceptor; and a metal oxide nano thin film which is positioned between the anode and the photoactive layer and includes a metal oxide having an average particle diameter less than or equal to 10nm. In the metal oxide, the particle diameter distribution greater than or equal to 90(number)% with respect to the total number of metal oxide particles is ±4nm on the basis of the average particle diameter. The organic solar cell enhances the efficiency of the organic solar cell by increasing the transfer velocity of holes and can improve the lifetime of the organic solar cell by suppressing the permission of oxygen and moisture from the outside to prevent the reduction of the photoactive performance of the polymer included in the ...

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Номер записи: 12
25-01-2018 дата публикации

SEMICONDUCTOR MEMORY DEVICE

Номер: KR1020180008993A
Автор: LEE, JIN WOO, PARK, JEONG HEE, AHN, DONG HO, WU ZHE, SHIN, HEE JU, LEE, JA BIN
Принадлежит:

A semiconductor memory device is provided. The semiconductor memory device includes lower wires and upper wires crossing each other, variable resistance memory elements provided at intersections of the lower wires and the upper wires, and switching elements provided between the memory elements and the lower wires. Each of the switching elements includes first and second chalcogenide compound layers and conductive nano dots provided between the first and second chalcogenide compound layers. Accordingly, the present invention can improve integration and electrical characteristics. COPYRIGHT KIPO 2018 ...

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Номер записи: 13
24-12-2015 дата публикации

MANUFACTURING METHOD OF PHASE-CHANGE MEMORY DEVICE

Номер: KR1020150144191A
Автор: WU ZHE, PARK, JEONG HEE, AHN, DONG HO, PARK, JUNG HWAN, AHN, JUN KU, CHO, SUNG LAE, HORII HIDEKI
Принадлежит:

The present invention relates to a manufacturing method for a phase-change memory device including the following steps of: forming an insulating interlayer having an opening on a substrate; forming a first phase-change material layer pattern on the inner wall of the opening having a first composition; forming a second phase-change material layer pattern having a second composition and filling up the rest of the opening on the first phase-change material layer pattern; and forming a third phase-change material layer having a third composition by making the patterns at least partially mixed by putting energy into the first and the second phase-change material layer patterns. COPYRIGHT KIPO 2016 (AA) Second direction (BB) First direction ...

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Номер записи: 14
25-01-2018 дата публикации

ICE CRUSHING DEVICE

Номер: KR101822075B1
Автор: OH, CHEOL
Принадлежит: KOREA MARITIME UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

The present invention relates to an ice crushing device, including: an ice accommodating portion having a cylindrical shape with an opened upper portion, an inner space in which a lump-shaped ice is accommodated, and at least one ice outlet formed outwardly from a bottom surface of the inner space; a seawater spraying device installed along an upper circumference of the ice accommodating portion and spraying predetermined seawater into the inner space so as to mix the ice accommodated in the inner space with the seawater; and an ice crushing portion installed at an inner lower end of the ice accommodating portion so as to crush the ice accommodated in the inner space and discharge the ice to the ice outlet. COPYRIGHT KIPO 2018 ...

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Номер записи: 15
31-01-2018 дата публикации

MEMORY DEVICE

Номер: KR1020180010790A
Автор: WU ZHE, AHN, DONG HO, PARK, SOON OH, PARK, JEONG HEE, LEE, JIN WOO, HORII HIDEKI, SEONG, DONG JUN, CHOI, SEOL
Принадлежит:

A memory device is disclosed. The memory device comprises: a variable resistance layer; and a selective element layer which is positioned to be electrically connected to the variable resistance layer, and includes a chalcogenide switching material having a composition of the following chemical formula 1, Ge_XSi_Y(As_aTe_(1-a))_z]_(1-U)[X]_U, where 0.05 <= X <= 0.1, 0.15 <= Y <= 0.25, 0.7 <= Z <= 0.8, X+Y+Z=1, 0.45 <= a <= 0.6, 0.08 <= U <= 0.2. COPYRIGHT KIPO 2018 ...

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Номер записи: 16
23-03-2017 дата публикации

METHOD FOR PREPARING GRAPHENE BY USING EUTECTIC GRAPHITE

Номер: WO2017048027A1
Автор: OH, Chul, LEE, Hyoong Yoon, JANG, Kang Il, LEE, Hyun Woo, HAN, Dong Yun, KIM, Mi Sun
Принадлежит:

The present invention relates to a method for preparing graphene by using eutectic graphite. According to the present invention, the method for preparing graphene by using eutectic graphite comprises: a first step of preparing a sintered body comprising diamond and unreacted graphite, by sintering a mixture powder comprising a metal and graphite; a second step of converting, by dipping the sintered body in a strong acid aqueous solution and carrying out electrolysis on the same into a mixture comprising diamond and graphite; a third step of injecting a potassium permanganate (KMnO4) aqueous solution into the mixture, and stirring the same; a fourth step of stripping graphite within the mixture; a fifth step of recovering stripped graphene oxide; and a sixth step of reducing the stripped graphene oxide. According to the present invention, since eutectic graphite, which is a by-product to be disposed of after the process for preparing diamond, is recycled so as to be used as a raw material ...

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Номер записи: 17
04-09-2017 дата публикации

VARIABLE RESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020170100224A
Автор: WU ZHE, PARK, SOON OH, PARK, JEONG HEE, AHN, DONG HO, HORII HIDEKI
Принадлежит:

The present invention provides a variable resistance memory device including improved operation reliability. The variable resistance memory device comprises: a selection pattern; an intermediate electrode in contact with a first surface of the selection pattern; a variable resistance pattern facing the selection pattern with respect to the intermediate electrode; and a first electrode in contact with a second surface facing the first surface of the selection pattern, and including an n-type semiconductor material. COPYRIGHT KIPO 2017 ...

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Номер записи: 18
13-02-2018 дата публикации

NONVOLATILE MEMORY DEVICE

Номер: KR1020180015402A
Автор: WU ZHE, PARK, JEONG HEE, AHN, DONG HO, LEE, JIN WOO, SHIN, HEE JU, LEE, JA BIN
Принадлежит:

Provided is a nonvolatile memory device for improving the reliability of the memory device using an OTS selection element including a multilayer film. The nonvolatile memory device includes a first electrode and a second electrode which are separated from each other, a selection element layer formed between the first electrode and the second electrode to be adjacent to the second electrode in comparison with the first electrode and including a first chalcogenide layer and a second chalcogenide layer, wherein the first chalcogenide layer includes a first chalcogenide material and the second chalcogenide layer includes a second chalcogenide material, and a memory layer formed between the first electrode and the selection element layer and including a third chalcogenide material which is different from the first chalcogenide material and the second chalcogenide material. COPYRIGHT KIPO 2018 ...

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Номер записи: 19
06-11-2017 дата публикации

MANUFACTURING METHOD OF COPPER FOIL/NEGATIVE CURRENT COLLECTOR IN WHICH THICKNESS OF GRAPHENE LAYER CAN BE CONTROLLED, AND HEAT DISSIPATING MEMBER/NEGATIVE CURRENT COLLECTOR MANUFACTURED THEREBY

Номер: KR1020170122442A
Автор: OH, CHUL, RYU, JONG HO, PARK, JONG IL
Принадлежит:

The present invention relates to a manufacturing method of a copper foil/negative current collector in which a thickness of a graphene layer can be controlled, and a heat dissipating member/negative current collector manufactured thereby. According to the present invention, a manufacturing method of copper foil comprises the following steps of: forming a copper (Cu) layer; forming a nickel (Ni) layer on the copper layer; and forming graphene on the nickel layer through supplying hydrocarbon and heat treatment. According to the present invention, after forming the nickel layer on the copper layer in advance to be heat treated, the nickel layer participates in reaction to sufficiently secure a thickness of the graphene layer. Moreover, in a heat treatment process, the nickel layer is evaporated to improve thermal characteristics of a final product. COPYRIGHT KIPO 2017 (S100) Forming a copper layer (S200) Forming a nickel layer on the copper layer (S300) Forming graphene through supplying ...

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Номер записи: 20
31-08-2017 дата публикации

VARIABLE RESISTANCE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020170099214A
Автор: WU ZHE, AHN, DONG HO, PARK, JEONG HEE, HORII HIDEKI
Принадлежит:

According to the inventive concept of the present invention, a variable resistance memory device comprises: a first electrode layer; a selection element layer including a first chalcogenide material having a chalcogenide switching material doped with at least one selected from boron (B) and carbon (C) on the first electrode layer; a second electrode layer on the selection element layer; a variable resistance layer including a second chalcogenide material having at least one element different from the chalcogenide switching material on the second electrode layer; and a third electrode layer on the variable resistance layer. The variable resistor memory element of the present invention has a selection element in which a crystallization temperature increases, the durability thereof is improved, and off-current is reduced. COPYRIGHT KIPO 2017 ...

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Номер записи: 21
11-12-2015 дата публикации

EXERCISE AND PLAY APPARATUS

Номер: KR101577141B1
Автор: OH, CHEOL, JO, A HAE, SEO, HYEON, KIM, NAM JIN, JUNG, SUNG GYOON, LEE, SEUNG NO, HWANG, SOO BIN, JEON, IN SU
Принадлежит: INDUSTRY FOUNDATION OF CHONNAM NATIONAL UNIVERSITY

According to an embodiment of the present invention, an exercise and play apparatus comprises: a handle unit to generate a rotational force through an exercise of a user; a power transfer unit to transfer the rotational force generated by the handle unit; a disk unit which receives the rotational force from the power transfer unit to rotate, and includes a pattern block disposed on a upper surface thereof; and a play apparatus unit in which a vertical movement is performed by the pattern block of the disk unit. According to an embodiment of the present invention, when a first user exercises using an exercise apparatus, a rotational force generated by the exercise apparatus drives a play apparatus which can be played by a second user to allow the first user to exercise and the second user to play at the same time. The first user can comfortably exercise and the second user can enjoy the play apparatus. Consequently, the first user can manage physical fitness and form a close bond with the ...

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Номер записи: 22
23-03-2017 дата публикации

METHOD FOR PREPARING GRAPHENE USING EUTECTIC GRAPHITE

Номер: KR1020170032656A
Автор: OH, CHUL, LEE, HYOONG YOON, JANG, KANG IL, LEE, HYUN WOO, HAN, DONG YUN, KIM, MI SUN
Принадлежит:

The present invention relates to a method for preparing graphene using eutectic graphite. The method according to the present invention comprises the steps of: 1) sintering mixed powder containing a metal and graphite to obtain a sintered body containing diamond and unreacted graphite; 2) dipping the sintered body into a strong acid and carrying out electrolysis to convert it into a mixture containing diamond and graphite; 3) introducing an aqueous potassium permanganate (KMnO_4) solution to the mixture and carrying out agitation; 4) exfoliating graphite in the mixture; 5) recovering the exfoliated graphene oxide; and 6) reducing the recovered graphene oxide. According to the present invention, eutectic graphite which is a byproduct discarded after a process for producing diamond can be recycled to be used as a raw material for graphene, thereby reducing the cost required for preparing graphene. In addition, It is possible to reduce the cost required for discarding eutectic graphite. Further ...

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Номер записи: 23
06-12-2018 дата публикации

HEAT RADIATING MEMBER AND HEAT RADIATING SHEET HAVING HEAT CONTROL FUNCTION AND MANUFACTURING METHOD THEREOF

Номер: KR1020180130030A
Автор: OH, CHUL, PARK, JONG IL, KIM, YE NA, RYU, JONG HO
Принадлежит:

The present invention relates to a heat radiating sheet having a heat control function. The heat radiating sheet includes a substrate; an adhesive layer provided on the substrate; and a heat radiating layer composed of a plurality of graphite parts spaced apart from each other on the adhesive layer and a spacing part provided between adjacent graphite parts. COPYRIGHT KIPO 2019 ...

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Номер записи: 24