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Применить Всего найдено 16. Отображено 16.
25-10-2017 дата публикации

반도체 소자의 제조 방법

Номер: KR0101789592B1
Автор: 노진태, 임헌형, 황기현, 김진균, 양상렬
Принадлежит: 삼성전자주식회사

... 기판 상에 희생막 및 상기 희생막과 서로 다른 물질을 포함하는 층간 절연막을 교대로 반복적으로 적층한다. 층간 절연막들 및 희생막들을 관통하여 기판 상면 일부를 노출시키는 홀을 형성한다. 홀 내벽 상에 제1 실리콘 소스 가스를 사용하여 씨드막을 형성한다. 씨드막을 성장시켜 홀 내부에 폴리실리콘 채널을 형성한다. 희생막들을 제거하여 층간 절연막들의 사이에 개구부들을 형성한다. 각 개구부들 내부에 게이트 구조물을 형성한다. 고분자량을 갖는 제1 실리콘 소스 가스를 사용하여 이종의 막질 상에 균일한 폴리실리콘 채널을 형성할 수 있다.

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Номер записи: 1
28-05-2015 дата публикации

VERTICAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020150057226A
Автор: NAM, PHIL OUK, YANG, JUN KYU, KIM, JIN GYUN, AHN, JAE YOUNG, LIM, HUN HYEONG, HWANG, KI HYUN
Принадлежит:

A manufacturing method of a vertical memory device stacks a layer insulation film and a sacrificial film including polysilicon or amorphous silicon on a substrate repeatedly and alternately. Channel holes which expose the upper side of the substrate by passing through the layer insulation films and the sacrificial films are formed. A channel is formed inside the channel hole. Openings which expose the upper side of the substrate by etching the layer insulation films and the sacrificial films adjacent to the channel are formed. A gap is formed between the layer insulation films by removing the sacrificial films. Gate lines which are filled with the gap are formed. The sacrificial film is selectively removed by forming the sacrificial film by using a material having a high etching selection ratio than the layer insulation film. COPYRIGHT KIPO 2015 (AA) First direction (BB) Second direction ...

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Номер записи: 2
20-06-2016 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Номер: KR1020160070510A
Автор: YUN, JU MI, NOH, YOUNG JIN, PARK, KWANG MIN, AHN, JAE YOUNG, YON, GUK HYON, YOO, DONG CHUL, RA, JOONG YUN, SON, YOUNG SEON, LEE, JEON IL, LIM, HUN HYEONG
Принадлежит:

A semiconductor device comprises a substrate, a tunnel insulation film, and a gate pattern. The tunnel insulation film is stacked on the substrate, and includes: a first silicon oxide film; a second silicon oxide film; and a silicon film arranged between the first and second silicon oxide films and having a thinner thickness than the first and second silicon oxide films. The gate pattern is arranged on the tunnel insulation film. Therefore, the semiconductor device can reduce an erase voltage and a charge loss of a non-volatile memory device. COPYRIGHT KIPO 2016 (AA) Second direction (BB) First direction ...

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Номер записи: 3
08-03-2016 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: KR1020160025165A
Автор: GO, HYUN YONG, LEE, EUN YOUNG, JEE, JUNG GEUN, CHOI, EUN YEOUNG, KIM, JIN GYUN, LIM, HUN HYEONG
Принадлежит:

A method for manufacturing a semiconductor device according to an embodiment of the present invention may include the steps of: mounting a substrate including a metal layer having an oxidized surface layer in a heat treatment chamber; generating a hydrogen radical in the heat treatment chamber; and deoxidizing the oxidized surface layer of the metal layer using the hydrogen radical. The objective of the present invention is to provide the method for manufacturing the semiconductor device, which can suppress increase in resistance of a gate electrode by preventing oxidation of the gate electrode of the semiconductor device. COPYRIGHT KIPO 2016 (S1) Preparing a metal layer having an oxidized surface layer in a heat treatment chamber (S2) Generating hydrogen radical in the heat treatment chamber (S3) Deoxidizing the oxidized surface layer of the metal layer ...

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Номер записи: 4
12-10-2018 дата публикации

비휘발성 메모리 장치 및 그 제조 방법

Номер: KR0101906167B1
Автор: 김홍석, 김용석, 임헌형, 황기현
Принадлежит: 삼성전자주식회사

... 비휘발성 메모리 장치 및 그 제조 방법이 제공된다. 상기 비휘발성 메모리 장치는 기판 상에 형성되고 상면과 측면을 포함하는 플로팅 게이트, 상기 플로팅 게이트의 상면 상에 형성된 제1 하부 차단막과, 상기 플로팅 게이트의 측면 상에 상기 제1 하부 차단막보다 두께가 얇은 제2 하부 차단막을 포함하는 하부 차단막, 상기 하부 차단막 상에 형성된 게이트간 절연막, 및 상기 게이트간 절연막 상에 형성된 컨트롤 게이트를 포함한다.

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Номер записи: 5
09-03-2016 дата публикации

APPARATUS FOR TREATING SUBSTRATE

Номер: KR1020160026572A
Автор: NOH, YOUNG JIN, PARK, KWANG MIN, SEO, EUN SUNG, SONG, YOUNG CHANG, AHN, JAE YOUNG, LIM, HUN HYEONG, CHOI, JI HOON
Принадлежит:

According to the present invention, an apparatus for treating a substrate includes: a treatment chamber stacking and treating a plurality of horizontally loaded substrates; a process gas supply unit supplying a process gas through a process gas supply nozzle installed in the stacked direction of the substrates along an inner wall of the treatment chamber to treat the substrates inside the treatment chamber; and an exhaust unit discharging gas from the inside of the treatment chamber; and a block gas supply unit supplying a block gas controlling the flow of the process gas inside the treatment chamber through a block gas spray injector installed in a circumference direction of the treatment chamber. COPYRIGHT KIPO 2016 (103) Process gas supply unit (104) Block gas supply unit (106) Heating unit (108) Exhausting unit (110) Main control unit ...

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Номер записи: 6
04-03-2016 дата публикации

SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND EPITAXIAL LAYER FORMING METHOD

Номер: KR1020160024087A
Автор: LEE, WOONG, KIM, CHAE HO, AN, KYONG WON, LEE, JOON SUK, LEE, WOO SUNG, LIM, HUN HYEONG
Принадлежит:

The present invention relates to a manufacturing method of a semiconductor device according to an embodiment of the present invention includes a step of alternatively stacking up layer insulation layers and sacrificial layers on a substrate; a step of forming opening units forming recesses on the substrate by penetrating through the layer insulation layers and the sacrificial layers; a step of forming a first epitaxial layer along a recessed surface of the substrate within a recess region of the substrate; and a step of filling the recess region of the substrate with the first epitaxial layer as a seed layer and forming a second epitaxial layer extended to the upper side of the substrate. The purpose of the present invention is to provide the semiconductor device with improved reliability and the manufacturing method of the semiconductor device. COPYRIGHT KIPO 2016 ...

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Номер записи: 7
30-11-2016 дата публикации

METHOD OF MANUFACTURING VERTICAL MEMORY DEVICE

Номер: KR1020160137091A
Автор: KIM, SUNG GIL, CHOI, JI HOON, KIM, HONG SUK, NOH, JIN TAE, KIM, DONG KYUM, LIM, HUN HYEONG
Принадлежит:

In a method of manufacturing a vertical memory device, a mold structure in which interlayer dielectrics and sacrificial films are alternately repeatedly stacked is formed on a substrate. A channel hole penetrating the mold structure is formed. A vertical channel structure is formed in the channel hole. A pad capping the vertical channel structure is formed in the upper part of the channel hole. A swelling ion implantation process is performed on the upper part of the pad. The sacrificial layers are replaced with gate lines. So, the vertical memory device with improved structural stability and operation reliability can be provided. COPYRIGHT KIPO 2016 (AA) Injecting a second ion (BB) First direction (CC) Third direction (DD) Second direction ...

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Номер записи: 8
07-05-2015 дата публикации

VERTICAL TYPE NON-VOLATILE MEMORY DEVICE

Номер: KR1020150048553A
Автор: NAM, PHIL OUK, YANG, JUN KYU, AHN, JAE YOUNG, YOO, DONG CHUL, LIM, HUN HYEONG, HWANG, KI HYUN
Принадлежит:

Provided are a vertical non-volatile memory device which has high density and enhanced reliability by reducing the height of a mold and minimizing misalignment at the same time and a method for manufacturing the same. The vertical non-volatile memory device comprises: a substrate wherein a cell area is defined on the basis of block units; multiple vertical channel structures which are formed by vertically growing on the surface within the cell area and are spaced apart from each other; and multiple gate electrodes and interlayer dielectrics which are alternately stacked along the side wall of the vertical channel structures on the substrate within the cell area and have at least one from metal film and metal silicide layer. The cell area has a connection area wherein the gate electrodes are extended horizontally to the substrate and connected with a word line through a vertical contact and a dummy area wherein the vertical channel structures are arranged on the outermost cell area. A polysilicon ...

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Номер записи: 9
25-06-2015 дата публикации

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING SAME

Номер: KR1020150070746A
Автор: KIM, JUNG HWAN, AHN, JAE YOUNG, YANG, HAN VIT, LIM, HUN HYEONG
Принадлежит:

The present invention relates to a three-dimensional semiconductor memory device and a method of fabricating the same. The method of fabricating the three-dimensional semiconductor memory device comprises the steps of: forming a thin film structure by stacking sacrificial films and insulating films on a substrate alternately and repeatedly; forming a channel hole which exposes the substrate by penetrating the thin film structure; processing the surface treatment of the sacrificial films which are exposed on the channel hole; forming a channel structure within the channel hole; forming a trench spaced apart from the channel structure, which penetrates the thin film structure; and replacing the sacrificial films exposed in the trench with gate patterns. COPYRIGHT KIPO 2015 (S10) Form a film structure (S20) Form a channel hole (S30) Treat sacrifycing film cleaning (S40) Treat sacrifying film surface (S50) Form a vertical insulation pattern and a semi-conductor pattern (S60) Form a trench ( ...

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Номер записи: 10
15-03-2016 дата публикации

SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF

Номер: KR1020160029236A
Автор: KIM, DONG WOO, KIM, DONG KYUM, LIM, HUN HYEONG, JEE, JUNG GEUN
Принадлежит:

A method for manufacturing a semiconductor apparatus according to an embodiment of the present invention includes the steps of: preparing a plurality of first semiconductor devices and an insulation layer covering the plurality of first semiconductor devices on a first substrate; forming a second substrate having a first layer and a second layer on the insulation layer; and forming a plurality of second semiconductor devices on the second substrate. The step of forming the second substrate includes the steps of: forming the first layer with a seed layer on the insulation layer; and epitaxially growing the second layer from the first layer. The semiconductor apparatus can be highly integrated. COPYRIGHT KIPO 2016 ...

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Номер записи: 11
30-11-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020160136881A
Автор: SHIN, HYUN JIN, KIM, HONG SUK, KIM, JUNG HWAN, LEE, SANG HOON, LIM, HUN HYEONG, CHO, YONG SEOK, KIM, YOUNG DAE, YANG, HAN VIT
Принадлежит:

The present invention relates to a semiconductor device and to a method for manufacturing the same. The method includes: forming a structure in which at least parts of a metal film pattern are exposed by including the metal film pattern on a substrate; generating a metal oxide on a surface exposed of the metal pattern so as to form a reserve buffer oxide film to cover the surface of the structure and the metal oxide; and reducing the metal oxide film as metal so as to convert the reserve buffer oxide film into the buffer oxide film by removing the metal oxide film. The semiconductor device reduces the out-gassing of the metal and reduces metal containment so as to have a low resistance. COPYRIGHT KIPO 2016 ...

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Номер записи: 12
07-04-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Номер: KR1020160038161A
Автор: JANG, BYONG HYUN, YOO, DONG CHUL, AHN, JAE YOUNG, LIM, HUN HYEONG
Принадлежит:

The present invention relates to a three-dimensional memory device comprising: a vertical channel structure vertically extending on a substrate; interlayer insulating layers surrounding the vertical channel structure and vertically laminated on the substrate; gate electrodes surrounding the vertical channel structure, disposed between the interlayer insulating layers, and including a round edge adjacent to the vertical channel structure; and auxiliary gate insulation patterns disposed between the gate electrodes and the vertical channel structure. The sides of the auxiliary gate insulation patterns being in contact with the vertical channel structure and the sides of the interlayer insulating layers being in contact with the vertical channel structure are coplanar. COPYRIGHT KIPO 2016 ...

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Номер записи: 13
20-06-2016 дата публикации

GAS INJECTOR AND WAFER PROCESSING APPARATUS HAVING SAME

Номер: KR1020160070359A
Автор: CHOI, JI HOON, NOH, YOUNG JIN, RA, JOONG YUN, AHN, JAE YOUNG, LIM, HUN HYEONG
Принадлежит:

The present invention relates to a gas injector. The gas injector includes: a gas introduction pipe which introduces a process gas as a gas supply source into a reaction tube; a gas distribution body which is connected to the gas introduction pipe, extended in one direction from the gas introduction pipe inside the reaction tube, and extended in a circumference direction of the reaction tube in the shape of an arch; and a plurality of nozzles which are formed to be separated from each other in the extended direction of the gas distribution body on an inside surface of the gas distribution body and spray the process gas. COPYRIGHT KIPO 2016 ...

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Номер записи: 14
02-10-2015 дата публикации

BOAT FOR LOADING SUBSTRATE

Номер: KR1020150110142A
Автор: LEE, WOONG, AN, KYONG WON, YANG, CHEOL KYU, LIM, HUN HYEONG, HWANG, KI HYUN
Принадлежит:

Provided is a boat for loading a substrate. The boat for loading a substrate comprises: a support column extending in a first direction; and a support rod attached to the support column to support a semiconductor substrate and protruding in a second direction intersecting with the first direction. The support rod includes: multiple contact parts which come in contact with the semiconductor substrate and are spaced in the second direction; and a connection part which is connected to the multiple contact parts and does not come in contact with the semiconductor substrate. COPYRIGHT KIPO 2016 ...

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Номер записи: 15
28-09-2016 дата публикации

THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020160112074A
Автор: CHOI, JI HOON, LIM, SEUNG HYUN, KIM, SUNG GIL, KIM, HONG SUK, LIM, HUN HYEONG, SIM, HYUN JUN
Принадлежит:

According to an embodiment of the present invention, a semiconductor memory device includes: a stacked structure including gate electrodes stacked on a substrate in a vertical direction; a vertical insulation structure penetrating the stacked structure in the vertical direction and disposed on a wall of one side of the stacked structure; a vertical channel unit disposed on a side wall of the vertical insulation structure; and a common source area disposed on the other side of the stacked structure and formed in the substrate. A side wall of a lower area of the vertical channel unit protrudes to come in contact with the vertical insulation structure. COPYRIGHT KIPO 2016 ...

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Номер записи: 16