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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 9. Отображено 9.
03-02-2017 дата публикации

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020170012758A
Автор: NAM, PHIL OUK, SON, YONG HOON, KIM, KYUNG HYUN, KIM, BYEONG JU, PARK, KWANG CHUL, SOHN, YEON SIL, LEE, JIN I, LIM, JONG HEUN, JUNG, WON BONG
Принадлежит:

A semiconductor device is provided. The semiconductor device includes a polycrystalline semiconductor film, first and second laminate structures which are arranged on the polycrystalline semiconductor film and are separated from each other in a second direction across a first direction by a separation trench extended in the first direction, and a vertical channel structure which vertically passes through each of the first and second laminate structures. The polycrystalline semiconductor film includes a first crystal grain region and a second crystal grain region which come into contact with each other in the second direction. Crystal grains in the first and second crystal grain regions have long axes in the second direction. Accordingly, the present invention can improve reliability and integration. COPYRIGHT KIPO 2017 ...

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Номер записи: 1
02-01-2018 дата публикации

반도체 소자 및 반도체 소자의 제조 방법

Номер: KR0101813513B1
Автор: 안성수, 권오익, 김범수, 김현성, 신경섭, 윤민경, 정승필, 정원봉
Принадлежит: 삼성전자주식회사

... 반도체 소자의 제조 방법에 있어서, 기판 상에 터널 절연막을 형성한다. 터널 절연막 상에 복수의 게이트 패턴들을 형성한다. 게이트 패턴의 측벽 및 상기 터널 절연막 상에 캐핑막 패턴을 형성한다. 게이트 패턴 및 캐핑막 패턴에 의해 커버되지 않는 터널 절연막 부분을 식각하여 터널 절연막 패턴을 형성한다. 기판 상에 게이트 패턴, 캐핑막 패턴 및 터널 절연막 패턴을 커버하며 인접하는 캐핑막 패턴들 사이에서 에어 갭(air gap)을 포함하는 절연막을 형성한다. 인접하는 캐핑막 패턴들 사이의 터널 절연막 부분을 식각함으로써, 에어 갭이 형성될 수 있는 공간을 늘릴 수 있다.

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Номер записи: 2
16-03-2017 дата публикации

NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020170029795A
Автор: SON, YONG HOON, KIM, JONG WON, KANG, CHANG SEOK, PARK, YOUNG WOO, LEE, JAE DUK, KIM, KYUNG HYUN, KIM, BYEONG JU, NAM, PHIL OUK, PARK, KWANG CHUL, SOHN, YEON SIL, LEE, JIN I, JUNG, WON BONG
Принадлежит:

Provided are a nonvolatile memory device with improved reliability by correcting a coupling phenomenon between word lines, and a manufacturing method thereof. The nonvolatile memory device comprises: a conductive line vertically extended to a substrate on the substrate; a first channel layer vertically extended to the substrate and spaced from the conductive line on the substrate; a second channel layer vertically extended to the substrate between the first channel layer and the conductive line; a first gate electrode including a first part having first thickness and a second part having thickness different from the first part between the conductive line and the second channel layer; and a second gate electrode having the second thickness between the first channel layer and the second channel layer. COPYRIGHT KIPO 2017 ...

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Номер записи: 3
09-03-2017 дата публикации

SEMICONDUCTOR MEMORY DEVICE

Номер: KR1020170026924A
Автор: SON, YONG HOON, LEE, JIN I, KIM, KYUNG HYUN, KIM, BYEONG JU, NAM, PHIL OUK, PARK, KWANG CHUL, SOHN, YEON SIL, LIM, JONG HEUN, JUNG, WON BONG
Принадлежит:

A semiconductor memory device is disclosed. The semiconductor memory device may include a stack including gate electrodes stacked on a substrate in a vertical direction and insulating patterns interposed between the gate electrodes, vertical channels passing through the stack and connected to the substrate, a tunnel insulating layer enclosing each of the vertical channels, charge storing patterns provided between the tunnel insulating layer and the gate electrodes and between the insulating patterns adjacent in the vertical direction, blocking insulating patterns provided between the charge storing patterns and the gate electrodes and between the insulating patterns adjacent in the vertical direction, and a bit line crossing the stack and connected to the vertical channels. The blocking insulating patterns may have a vertical thickness that is greater than that of the gate electrodes. COPYRIGHT KIPO 2017 ...

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Номер записи: 4
08-02-2017 дата публикации

SEMICONDUCTOR DEVICE

Номер: KR1020170014036A
Автор: PARK, KWANG CHUL, YUN, JANG GN, JUNG, WON BONG
Принадлежит:

A semiconductor device according to an embodiment of the present invention includes a stacked structure disposed on a substrate and including a gate electrode and an interlayer insulating layer which are alternately stacked, channel holes which penetrate through the stacked structure, are perpendicularly extended to the substrate, and have channel regions, and a horizontal part located below the stacked structure on the substrate and including a region where the channel regions are horizontally extended from the channel holes. The horizontal part surrounds each of the channel holes and is connected to each other between at least some of the channel holes. So, the semiconductor device with improved reliability can be provided. COPYRIGHT KIPO 2017 ...

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Номер записи: 5
15-12-2016 дата публикации

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

Номер: KR1020160143982A
Автор: NAM, PHIL OUK, SON, YONG HOON, KIM, KYUNG HYUN, KIM, BYEONG JU, PARK, KWANG CHUL, SOHN, YEON SIL, LEE, JIN I, LIM, JONG HEUN, JUNG, WON BONG
Принадлежит:

A memory device according to an embodiment of the present invention includes a first memory region which includes a first substrate, a plurality of first semiconductor elements and a first interlayer dielectric layer covering the plurality of first semiconductor elements, and a second memory region which includes a second substrate prepared on the first interlayer dielectric layer and a plurality of second semiconductor elements arranged on the second substrate. The second substrate includes a first region which is arranged in a plurality of groove patterns prepared on the first interlayer dielectric layer and a second region which includes a crystal grain extended from the first region and is arranged on the upper side of the first interlayer dielectric layer. Accordingly, the present invention can improve the performance of the memory device. COPYRIGHT KIPO 2016 ...

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Номер записи: 6
31-03-2017 дата публикации

VERTICAL MEMORY DEVICE AND METHOD OF MANUFACTURING SAME

Номер: KR1020170035629A
Автор: SON, YONG HOON, YEO, CHA DONG, CHOI, HAN MEI, KIM, KYUNG HYUN, NAM, PHIL OUK, PARK, KWANG CHUL, SOHN, YEON SIL, LEE, JIN I, JUNG, WON BONG
Принадлежит:

A vertical memory device includes a substrate, a plurality of channels extending in a direction perpendicular to the upper surface of the substrate, a plurality of non-metal gate patterns surrounding the channels and stacked and spaced apart from each other in the vertical direction, and a plurality of metal gate patterns surrounding each of the non-metal gate patterns and stacked and spaced apart from each other in the vertical direction. The combination of the non-metal gate pattern and the metal gate pattern can improve the mechanical and electrical stability of the vertical memory device. COPYRIGHT KIPO 2017 (AA) First direction (BB) Third direction (CC) Second direction ...

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Номер записи: 7
12-04-2017 дата публикации

SEMICONDUCTOR MEMORY DEVICE

Номер: KR1020170039789A
Автор: SON, YONG HOON, KIM, KYUNG HYUN, KIM, BYEONG JU, NAM, PHIL OUK, PARK, KWANG CHUL, SOHN, YEON SIL, LEE, JIN I, JUNG, WON BONG
Принадлежит:

The semiconductor memory device of the present invention includes insulating patterns and gate patterns sequentially stacked on a substrate, a vertical channel connected to the substrate and passing through the insulating patterns and the gate patterns, a charge storage structure disposed between the gate patterns and the vertical channel, and a contact structure extended in a direction perpendicular to the substrate and horizontally separating the gate patterns. Each of the gate patterns includes a first barrier pattern disposed between the insulating patterns and having a concave part recessed toward the contact structure, and a metal pattern disposed in the concave part of the first barrier pattern. So, the semiconductor memory device with improved reliability can be provided. COPYRIGHT KIPO 2017 ...

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Номер записи: 8
29-11-2016 дата публикации

VERTICAL MEMORY DEVICE

Номер: KR1020160135935A
Автор: SON, YONG HOON, KIM, KYUNG HYUN, KIM, BYEONG JU, NAM, PHIL OUK, PARK, KWANG CHUL, SOHN, YEON SIL, LEE, JIN I, LIM, JONG HEUN, JUNG, WON BONG, KANAMORI KOHJI
Принадлежит:

A vertical memory device includes a substrate, a channel which is extended in a vertical direction on the substrate and includes a protrusion part which is branched from a bottom part in a horizontal direction, a semiconductor pattern which connects the protrusion part and the substrate, and gate lines which are arranged in the upper part of the semiconductor pattern and the protrusion part of the channel, surround the channel, are stacked and spaced apart from each other in a vertical direction. A connection between the channel and the substrate can be realized by the protrusion part and the semiconductor pattern. So, the vertical memory device with high mechanical and structural reliability can be provided. COPYRIGHT KIPO 2016 (AA) First direction (BB) Third direction (CC) Second direction ...

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Номер записи: 9