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Применить Всего найдено 10. Отображено 10.
28-12-2018 дата публикации

질화 갈륨 기판의 제조 방법

Номер: KR0101933778B1
Автор: 김진교, 장동수, 주미연, 김화섭, 김동회
Принадлежит: 경희대학교 산학협력단

... 본 발명은 질화 갈륨 기판 제조 방법을 개시한다. 본 발명의 실시예에 따른 질화 갈륨 기판 제조 방법은 성장 기판 상에 적어도 하나의 윈도우 영역 및 돌출 영역을 포함하는 마스크 패턴을 형성하는 단계; 상기 성장 기판 상에 질화 갈륨(GaN; gallium nitride)을 에피택셜 측면 오버그로스(ELOG; epitaxial lateral overgrowth)시켜, N-극성 질화 갈륨 및 Ga-극성 질화 갈륨을 포함하는 질화 갈륨을 형성하는 단계; 상기 N-극성 질화 갈륨을 선택적으로 식각하는 단계; 및 상기 마스크 패턴을 제거하는 단계를 포함하는 것을 특징으로 한다.

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Номер записи: 1
26-07-2018 дата публикации

METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATE

Номер: WO2018135688A1
Автор: KIM, Chin Kyo, JANG, Dong Soo, JUE, Mi Yeon, KIM, Hwa Seob, KIM, Dong Hoi
Принадлежит:

The present invention provides a method for producing a gallium nitride (GaN) substrate. The method for producing a gallium nitride substrate according to an embodiment of the present invention comprises: a step of forming a mask pattern, including at least one window region and at least one protruding region, on a growth substrate; a step of forming gallium nitride, comprising N-polar gallium nitride and Ga-polar gallium nitride, on the growth substrate by subjecting gallium nitride to epitaxial lateral overgrowth (ELOG); a step of selectively etching the N-polar gallium nitride; and a step of removing the mask pattern.

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Номер записи: 2
14-06-2016 дата публикации

GRAPHENE AND METHOD FOR GROWING OF GRAPHENE USING SPONTANEOUS PATTERN TRANSFER

Номер: KR0101630070B1
Автор: 김진교, 이상화, 주미연
Принадлежит: 경희대학교 산학협력단

... 기판 상의 촉매층의 촉매 마스크 패턴을 그래핀 성장용 금속 박막에 자발적 패턴 마스크로 전사시켜, 전사된 자발적 패턴 마스크를 통하여 그래핀을 선택적으로 성장시키는 자발적 패턴 전사를 이용한 그래핀 성장 방법이 개시된다.

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Номер записи: 3
26-07-2018 дата публикации

METHOD FOR PRODUCING LIGHT-EMITTING DIODE

Номер: WO2018135689A1
Автор: KIM, Chin Kyo, JANG, Dong Soo, JUE, Mi Yeon, KIM, Hwa Seob, KIM, Dong Hoi
Принадлежит:

The present invention provides a method for producing a light-emitting diode. The method for producing a light-emitting diode according to an embodiment of the present invention comprises: a step of forming a mask layer, including at least one window region and at least one protruding region, on a growth substrate; a step of forming gallium nitride (GaN), comprising N-polar gallium nitride and Ga-polar gallium nitride, on the growth substrate by subjecting gallium nitride to epitaxial lateral overgrowth (ELOG); a step of selectively etching the N-polar gallium nitride; and a step of removing the mask layer, wherein the protruding region of the mask layer has a positive-type protruding pattern.

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Номер записи: 4
03-07-2018 дата публикации

MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT

Номер: KR101874228B1
Автор: KIM, CHIN KYO, JANG, DONG SOO, JUE, MI YEON, KIM, HWA SEOB, KIM, DONG HOI
Принадлежит: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

The present invention provides a manufacturing method of a light emitting element to manufacture a high-quality vertical light emitting element. According to embodiments of the present invention, the manufacturing method of a light emitting element comprises: a step of forming a mask layer including at least one window region and a protruding region on a growth substrate; a step of performing epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polarity gallium nitride and Ga-polarity gallium nitride; a step of selectively etching the N-polarity gallium nitride; and a step of removing the mask layer. The protruding region of the mask layer has a positive-type protruding pattern. COPYRIGHT KIPO 2018 ...

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Номер записи: 5
01-08-2018 дата публикации

METHOD FOR MANUFACTURING GALLIUM NITRIDE SUBSTRATE

Номер: KR1020180086806A
Автор: KIM, CHIN KYO, JANG, DONG SOO, JUE, MI YEON, KIM, HWA SEOB, KIM, DONG HOI
Принадлежит:

Disclosed is a method for manufacturing a gallium nitride (GaN) substrate for reducing a defect ratio of a GaN substrate. According to an embodiment of the present invention, the method comprises the following steps: forming a mask pattern including at least one window region and protrusion region on a growth substrate; forming GaN including N-polar GaN and Ga-polar GaN by performing epitaxial lateral overgrowth (ELOG) of the GaN on the growth substrate; selectively etching the N-polar GaN; and removing the mask pattern. COPYRIGHT KIPO 2018 ...

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Номер записи: 6
03-07-2018 дата публикации

MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT

Номер: KR101874229B1
Автор: KIM, CHIN KYO, JANG, DONG SOO, JUE, MI YEON, KIM, HWA SEOB, KIM, DONG HOI
Принадлежит: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY

The present invention provides a manufacturing method of a light emitting element to manufacture a high-quality vertical light emitting element. According to embodiments of the present invention, the manufacturing method of a light emitting element comprises: a step of forming a mask layer including at least one window region and a protruding region on a growth substrate; a step of performing epitaxial lateral overgrowth (ELOG) on gallium nitride (GaN) on the growth substrate to form gallium nitride including N-polarity gallium nitride and Ga-polarity gallium nitride; a step of selectively etching the N-polarity gallium nitride; and a step of removing the mask layer. The window region of the mask layer has a negative-type window pattern. COPYRIGHT KIPO 2018 ...

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Номер записи: 7
26-07-2018 дата публикации

METHOD FOR PRODUCING LIGHT-EMITTING DIODE

Номер: WO2018135690A1
Автор: KIM, Chin Kyo, JANG, Dong Soo, JUE, Mi Yeon, KIM, Hwa Seob, KIM, Dong Hoi
Принадлежит:

The present invention provides a method for producing a light-emitting diode. The method for producing a light-emitting diode according to an embodiment of the present invention comprises: a step of forming a mask layer, including at least one window region and at least one protruding region, on a growth substrate; a step of forming gallium nitride (GaN), comprising N-polar gallium nitride and Ga-polar gallium nitride, on the growth substrate by subjecting gallium nitride to epitaxial lateral overgrowth (ELOG); a step of selectively etching the N-polar gallium nitride; and a step of removing the mask layer, wherein the window region of the mask layer has a negative-type window pattern.

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Номер записи: 8
21-03-2023 дата публикации

인공지능 기반 호산구 증가증 예측 방법 및 장치

Номер: KR20230039227A
Автор: 김준기, 주미연
Принадлежит:

... 인공지능 기반 호산구 증가증 예측 방법 및 장치가 제공된다. 상기 방법은, 복수의 기존 환자를 대상으로 하는 학습 데이터를 이용하여 분류 모델 생성하는 단계 및 상기 분류 모델에 신규 환자의 과립 데이터를 적용하여 상기 신규 환자의 호산구 증가증 여부를 예측하는 단계를 포함한다.

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Номер записи: 9
19-04-2016 дата публикации

GRAPHENE AND GROWING METHOD OF GRAPHENE USING SPONTANEOUS PATTERN TRANSFER

Номер: KR1020160042368A
Автор: KIM, CHIN KYO, LEE, SANG HWA, JUE, MI YEON
Принадлежит:

The present invention relates to graphene, and a growing method of graphene using spontaneous pattern transfer and, more specifically, to a growing method of graphene using spontaneous pattern transfer, which selectively grows graphene through a transferred spontaneous pattern mask by transferring a catalytic mask pattern in a catalytic layer on a substrate, on a metal thin film for growing graphene using a spontaneous pattern mask. COPYRIGHT KIPO 2016 ...

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Номер записи: 10