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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 2. Отображено 2.
08-08-2023 дата публикации

LED chip and manufacturing method thereof

Номер: CN116565091A
Автор: ZHAO PENG, MA YINGJIE, MA XIANGZHU, BAN GUOXUN, LI HUANG
Принадлежит:

The embodiment of the invention discloses an LED chip and a manufacturing method thereof, in the LED chip, in the direction perpendicular to the plane where a transparent substrate is located, a reflector structure and a P electrode are at least partially overlapped, and a passivation layer located between the reflector structure and the P electrode is an insulating layer, so that the light emitting efficiency of the LED chip is improved. The P electrode, the passivation layer and the reflector structure can form a plate type parasitic capacitor of a sandwich structure, a junction capacitor is arranged between the P electrode and the N electrode, and the reflector structure is electrically connected with the N electrode, so that the P electrode, the passivation layer and the reflector structure can form a plate type parasitic capacitor of a sandwich structure. And a capacitor formed between the P electrode and the reflector structure is connected in parallel with a junction capacitor formed ...

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Номер записи: 1
09-06-2023 дата публикации

LED chip and manufacturing method thereof

Номер: CN116247146A
Автор: ZHAO PENG, MA XIANGZHU, MA YINGJIE, WANG XIANGYU, BAN GUOXUN
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The embodiment of the invention discloses an LED chip and a manufacturing method thereof. The LED chip comprises a substrate; the epitaxial structure is located on the first side of the substrate and comprises a light-emitting layer and a window layer located on the side, away from the substrate, of the light-emitting layer; the current expansion layer is located on one side, far away from the light-emitting layer, of the window layer, the current expansion layer is provided with a plurality of through holes, and the plurality of through holes expose part of the area of the window layer; the front electrode is positioned on one side, far away from the window layer, of the current expansion layer, and the plurality of through holes are filled with the front electrode; the back electrode is positioned on a second side of the substrate, and the second side is opposite to the first side; wherein the front electrode is a metal electrode, the window layer is a semiconductor layer, and the contact ...

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Номер записи: 2