Настройки

Укажите год
-

Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

Подробнее
-

Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

Подробнее

Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Ведите корректный номера.
Укажите год
Укажите год
Применить Всего найдено 3. Отображено 3.
08-08-2023 дата публикации

Hot-line work platform positioning method and system oriented to transformer substation environment

Номер: CN116558509A
Автор: ZHANG FURONG, SHEN ZHONGLIANG, CUI DAMING, CHEN RUI, ZHANG ZIQIN, CHEN XINGGUO, CAO BOWEN, GOU ZHENGTAO, ZHENG RUIDONG, YANG CHANGWANG, LI JINGSONG, CHEN CHAO, CHEN SONG, DONG LIANG, HUANG NAN, LIAO LONG, YANG HAN, WANG TENG, FAN YU, ZHANG YI, BAO FEIXIONG, NING XIAONAN, DING YUANYUAN, YANG SHIKAI
Принадлежит:

The invention discloses a transformer substation environment-oriented live working platform positioning method and system, and the method comprises the steps: measuring angular velocity and specific force information of a carrier, and inputting the angular velocity and specific force information into a strapdown inertial navigation system; the strapdown inertial navigation system carries out calculation to obtain position information of a carrier, and meanwhile, RTT distance information corresponding to the strapdown inertial navigation system is deduced in combination with the position, sent to a base station of the strapdown inertial navigation system, of the UWB tag; obtaining an observed quantity according to the difference between the RTT distance information and an RTT distance measurement value obtained through the UWB positioning system, and building a Kalman filtering model in combination with a state quantity; and performing state estimation through a Kalman filtering model to ...

Подробнее
Номер записи: 1
29-08-2023 дата публикации

Trilateral system selenium film crystallization method and selenium-based solar cell

Номер: CN116666470A
Автор: SHEN KAI, MAI YAOHUA, BAO FEIXIONG, YANG HUIDONG, WANG XINLONG
Принадлежит:

The invention discloses a trigonal system selenium film crystallization method and a selenium-based solar cell. The method comprises the following steps: after deposition of a Se absorption layer is completed, carrying out thermal annealing treatment on a material under oxygen-containing, anhydrous and illumination conditions to obtain a trigonal system selenium film; wherein in the illumination environment, the spectrum is in a spectrum interval of 300-800 nm, the illumination intensity is 100-1000 W/m < 2 >, and the illumination time is 15-110 minutes; in the thermal annealing process, the temperature rise time is 10-90 minutes, the thermal annealing temperature is 160-210 DEG C, the thermal annealing temperature holding time is 5-20 minutes, and after thermal annealing is completed, natural cooling is conducted to the room temperature. The crystallization process of the selenium thin film is controlled by regulating and controlling the thermal annealing environment of the selenium thin ...

Подробнее
Номер записи: 2
07-04-2023 дата публикации

Preparation method of trigonal system selenium film and solar cell thereof

Номер: CN115939234A
Автор: SHEN KAI, BAO FEIXIONG, MAI YAOHUA, YANG HUIDONG, WANG XINLONG, LIU JIAO, ZHOU YILIANG
Принадлежит:

The invention discloses a preparation method of a trigonal system selenium film and a solar cell thereof. Through a thermal evaporation or thermal sublimation method, deposition is carried out under the condition that the growth temperature of a substrate is higher than the phase transition temperature point of a solid phase and a gas phase of selenium, namely secondary sublimation occurs, and the trigonal system selenium film is prepared; in the preparation process, the growth temperature of the substrate is 190-210 DEG C, the temperature of the selenium source is 210-240 DEG C, and the growth time of the selenium film is 10 seconds to 10 minutes. The invention provides a method for directly preparing high-quality trigonal system selenium based on a high-temperature secondary sublimation process for the first time, a secondary recrystallization process is not needed, and nucleation growth, grain growth and lattice orientation of a selenium film are controlled by regulating and controlling ...

Подробнее
Номер записи: 3