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Применить Всего найдено 3. Отображено 3.
16-01-2019 дата публикации

Semiconductor device and method of forming SIP module over film layer

Номер: TW0201903916A
Автор: KIM OH-HAN, KIM KYUNG-HWAN, BEAK WOON-JAE, LEE HUN-TEAK, YOON IN-SANG, KIM, OH-HAN, KIM, KYUNG-HWAN, BEAK, WOON-JAE, LEE, HUN-TEAK, YOON, IN-SANG
Принадлежит:

A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the semiconductor die or component embedded in the penetrable film layer. A conductive layer is formed over a portion of the film layer within the attach area and over a portion of the film layer outside the attach area. An encapsulant is deposited over the film layer, conductive layer, and semiconductor die or component. The conductive layer extends outside the encapsulant. An insulating material can be disposed under the semiconductor die or component. A shielding layer is formed over the encapsulant. The shielding layer is electrically connected to the conductive layer. The penetrable film layer is removed. The semiconductor die or component disposed over the film layer and covered by the encapsulant and shielding layer form an SIP module without a substrate.

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Номер записи: 1
01-08-2021 дата публикации

Semiconductor device and method of forming SIP module over film layer

Номер: TW202129833A
Автор: KIM OH-HAN, KIM KYUNG-HWAN, BEAK WOON-JAE, LEE HUN-TEAK, YOON IN-SANG, KIM, OH-HAN, KIM, KYUNG-HWAN, BEAK, WOON-JAE, LEE, HUN-TEAK, YOON, IN-SANG
Принадлежит:

A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the semiconductor die or component embedded in the penetrable film layer. A conductive layer is formed over a portion of the film layer within the attach area and over a portion of the film layer outside the attach area. An encapsulant is deposited over the film layer, conductive layer, and semiconductor die or component. The conductive layer extends outside the encapsulant. An insulating material can be disposed under the semiconductor die or component. A shielding layer is formed over the encapsulant. The shielding layer is electrically connected to the conductive layer. The penetrable film layer is removed. The semiconductor die or component disposed over the film layer and covered by the encapsulant and shielding layer form an SIP module without a substrate.

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Номер записи: 2
16-09-2018 дата публикации

Semiconductor device and method of forming an integrated SiP module with embedded inductor or package

Номер: TW0201834084A
Автор: YANG DEOK-KYUNG, BEAK WOON-JAE, PARK YI-SU, KIM OH-HAN, LEE HUN-TEAK, LEE HEE-SOO, YANG, DEOK-KYUNG, BEAK, WOON-JAE, PARK, YI-SU, KIM, OH-HAN, LEE, HUN-TEAK, LEE, HEE-SOO
Принадлежит:

A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

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Номер записи: 3