15-07-1970 дата публикации
Номер: GB0001198567A
Принадлежит:
... 1,198,567. Electron beam apparatus; cathode materials; semi-conductor devices. GENERAL ELECTRIC & ENGLISH ELECTRIC COMPANIES Ltd. 9 May, 1969 [17 May, 1968], No. 23726/68. Addition to 1,134,681. Headings H1D and H1K. The electric discharge device claimed in Claim 1 of Specification 1,134,681 is modified in that the semi-conductor cathode body 1 is provided with at least one recess which is in the form of an "annular" channel 5, i.e. it forms a closed loop around a central "island" 2a, and which penetrates the N-type surface layer 2 and the PN junction 4 into the P-type layer 3 of cathode body 1. Preferably the reverse bias voltage applied across the PN junction to cause electron emission from the exposed areas of the junction is applied only to the "island" portion 2a via gold contact 7. The semi-conductor material may be silicon carbide doped N- and P-type respectively with nitrogen and aluminium. The annular channel 5 is preferably circular in plan but may, for example, be square, rectangular ...
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