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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 4. Отображено 4.
29-11-1989 дата публикации

CONNECTOR MEANS

Номер: GB0002188794B
Принадлежит: GEC AVIONICS, * GEC AVIONICS LIMITED

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15-07-1970 дата публикации

Improvements in or relating to Electric Discharge Devices.

Номер: GB0001198567A
Принадлежит:

... 1,198,567. Electron beam apparatus; cathode materials; semi-conductor devices. GENERAL ELECTRIC & ENGLISH ELECTRIC COMPANIES Ltd. 9 May, 1969 [17 May, 1968], No. 23726/68. Addition to 1,134,681. Headings H1D and H1K. The electric discharge device claimed in Claim 1 of Specification 1,134,681 is modified in that the semi-conductor cathode body 1 is provided with at least one recess which is in the form of an "annular" channel 5, i.e. it forms a closed loop around a central "island" 2a, and which penetrates the N-type surface layer 2 and the PN junction 4 into the P-type layer 3 of cathode body 1. Preferably the reverse bias voltage applied across the PN junction to cause electron emission from the exposed areas of the junction is applied only to the "island" portion 2a via gold contact 7. The semi-conductor material may be silicon carbide doped N- and P-type respectively with nitrogen and aluminium. The annular channel 5 is preferably circular in plan but may, for example, be square, rectangular ...

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16-08-1972 дата публикации

IMPROVEMENTS IN OR RELATING TO CATHODES FOR USE IN ELECTRIC DISCHARGE DEVICES

Номер: GB0001285866A
Принадлежит:

... 1285866 Cathode materials GENERAL ELECTRIC CO Ltd 22 June 1971 [22 June 1970] 302O3/70 Heading HID A cathode comprises a substrate 2 of high resistivity material and a layer 3 of semiconductor material of one conductivity type with a beveled surface 5 covered with a layer 6 of semi-conductor material of a second conductivity type, the two layers forming a P-N junction 9 with an emitting edge 11. Layers 2, 3 of intrinsic SiC and P-type SiC are epitaxially grown on a substrate 1 of N-type SiC. A surface 5 is lapped with diamond paste, cleaned and layer 6 of N-type SiC deposited. Parallel slots 7 are cut through layer 3 to divide it into strips. SiO 2 is deposited over the structure including the exposed edges of the junctions to suppress emission. A protective coating of SiN 2 is added, the top surface 10 is lapped to expose a number of parallel emitting edges 11 and a plurality of electrodes 12 and a common electrode 13 added. The substrate may be of insulating material or dispensed with ...

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07-10-1987 дата публикации

P.C.B. connector

Номер: GB0002188794A
Принадлежит:

A connector comprises two sheets of flexible insulating material (7a, 7b) each incorporating parallel conductive strips, the sheets overlapping at an array of terminations (3), and each strip being connected to one termination. Each strip of insulating material is connected to a plated hole (6) of a respective p.c.b. (13a, 13b). The connector allows the boards to be opened out without disconnection. ...

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