ELECTRONIC DEVICE, ARRANGEMENT AND PROCEDURE FOR MANUFACTURING AN ELECTRONIC DEVICE

LOW-PASS FILTER AND ELECTRONIC ELEMENT

MODULE AND ELECTRONIC DEVICE

Semiconductor device package comprising an encapsulated and conductively shielded semiconductor device die that provides an antenna feed to a waveguide

A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package.

Underbump metallization dimension variation with improved reliability

One embodiment of a packaged semiconductor device includes: a redistributed layer (RDL) structure formed over an active side of a semiconductor die embedded in mold compound, the RDL structure includes a plurality of solder ball pads that in turn includes: a set of first solder ball pads located on a front side of the packaged semiconductor device within a footprint of the semiconductor die, and a set of second solder ball pads located on the front side of the packaged semiconductor device outside of the footprint of the semiconductor die, each first solder ball pad includes a first center portion having a first diameter measured between opposite outer edges of the first center portion, each second solder ball pad includes a second center portion having a second diameter measured between opposite outer edges of the second center portion, and the first diameter is smaller than the second diameter.

Lead frame with partially-etched connecting bar

A lead frame strip includes an array of lead frames. The lead frames each include a die pad and lead fingers that are spaced from the die pads and disposed along one or more sides of the die pads. The lead fingers have proximal ends near to the die pad and distal ends farther from the die pad. Connection bars extend between the lead frames. The lead fingers of adjacent lead frames extend from opposing sides of the connection bars. The connection bars have first portions where the lead fingers are connected thereto, and second portions between adjacent lead finger connections to the connection bar. The second portions are etched to form a bar that extends diagonally from a first one of the adjacent lead fingers connected thereto to a second one of the adjacent lead fingers connected thereto.

Method and Apparatus for Coupling a Waveguide Structure to an Integrated Circuit Package

A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package. 1. A semiconductor device package comprising:a lead frame;a semiconductor device die adhesively coupled by an inactive major surface of the semiconductor device die to the lead frame, the semiconductor die comprising a radio frequency (RF) pad on an active major surface of the semiconductor die, wherein the inactive major surface of the semiconductor device die is opposite the active major surface of the semiconductor device die;an encapsulant material injected over and around the semiconductor device die and the lead frame; the antenna feed corresponds with the RF signal pad on the semiconductor device die, and', 'at least a portion of the antenna feed is directly above the RF signal pad; and, 'an antenna feed formed on a major surface of the encapsulant material, wherein'} the vertical interconnect comprises a continuous conductor formed by additive manufacturing, and', 'the continuous conductor is vertically disposed through the encapsulant material., 'a vertical interconnect coupling the RF signal pad to the antenna feed, wherein'}2. The semiconductor device package of further comprising:a waveguide contact pad on the major surface of the encapsulant material corresponding to the antenna feed; andan ...

Semiconductor device with substrate integrated hollow waveguide and method therefor

A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.

Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect

A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate. 2. A method as claimed in claim 1 , wherein the first trenches and the second trenches are etched in a single step claim 1 , said first trenches having a smaller diameter than the second trenches leading to the through-holes claim 1 , with the result that the second trenches will extend further into the substrate than the first trenches claim 1 , said trenches having inner faces.3. A method as claimed in claim 2 , characterized in that the step of applying conductive material in the second trenches comprises the steps of applying a seed layer and electroplating.4. A method as claimed in claim 2 , characterized in that a plurality of second trenches are neighbouring and mutually interconnected so as to form a single vertical interconnect.5. A method as claimed in claim 4 , wherein the electrically conductive material applied in the first and the second trenches is polysilicon.6. A method as claimed in claim 1 , wherein the step of removing material for opening the second trenches comprises the step of wet-chemical etching to form a cavity claim 1 , said cavity having a larger diameter than the second trenches.7. A method as claimed in claim 1 , wherein the second trenches are formed by wet-chemical etching from the second side of the substrate before provision of the first trenches claim 1 , said second trenches being shaped as cavities and have a larger diameter than the first trenches.8. A method as claimed in claim 7 , wherein the second trenches are opened by etching in the same step as the etching of the first trenches.9. A method as claimed in claim 7 , wherein the second trenches extend up to the first side of the ...

Low pass filter and electronic device

The electronic device (100) of the invention comprises a semiconductor device (30) and a low-pass filter (20), which are present in a stacked configuration, and which together include a phase locked loop. The low-pass filter is preferably embodied by vertical trench capacitors, and preferably comprises a drift compensation part. The device (100) can be suitably provided in an open loop architecture. In a preferred embodiment,the low-pass filter comprises a large capacitor (C2) and a small capacitor (C1) connected in parallel,the large capacitor (C2) being connected in series with a resistor (R1).

Method and apparatus for coupling a waveguide structure to an integrated circuit package

A mechanism is provided to reduce a distance of a waveguide antenna from transmit and receive circuitry in an integrated circuit device die. This distance reduction is performed by providing vertical access to radio frequency connections on a top surface of the IC device die. A cavity in the encapsulant of the package can be formed to provide access to the connections and plated to perform a shielding function. A continuous connection from the RF pads is used as a vertical interconnect. The region around the vertical interconnect can be filled with encapsulant potting material and back grinded to form a surface of the semiconductor device package. A waveguide antenna feed can be plated or printed on the vertical interconnect on the surface of the package.

Package with an integrated circuit die and a waveguide launcher

An integrated circuit package comprising an encapsulant, a semiconductor die in the encapsulant the semiconductor die comprising a plurality of die terminals, an integrated waveguide launcher, wherein the integrated waveguide launcher is connected to one of the die terminals and a land grid array provided on a bottom surface of the package. The land grid array comprises a plurality of package terminals, each package terminal configured to be soldered to a printed circuit board, and an opening, wherein the opening is aligned with the integrated waveguide launcher.

ELECTRONIC DEVICE, ARRANGEMENT AND METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE

Tiefpassfilter und elektronisches bauelement

Modul und elektronische vorrichtung

Semiconductor device with substrate integrated hollow waveguide and method therefor

A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.

Elektronische vorrichtung, anordnung und verfahren zum herstellen einer elektronischen vorrichtung

A system

A system comprising: a waveguide assembly comprising a plurality of waveguides, the plurality of waveguides comprising at least a first waveguide and a second waveguide, and an integrated circuit package, IC package, comprising a plurality of launchers to one or more of transmit signalling to and receive signalling from a respective one of the plurality of waveguides, wherein the waveguide assembly comprises a surface configured to be coupled to the IC package and each of the plurality of waveguides comprises an opening in the surface configured to be aligned with its respective launcher, and wherein each of the openings has a major dimension and a minor dimension, wherein the major dimension is larger than the minor dimension, and wherein the major dimension of at least the opening of the first waveguide is oriented perpendicular to the major dimension of the opening of the second waveguide.

System

A system comprising: a waveguide assembly comprising a plurality of waveguides, the plurality of waveguides comprising at least a first waveguide and a second waveguide, and an integrated circuit package, IC package, comprising a plurality of launchers to one or more of transmit signalling to and receive signalling from a respective one of the plurality of waveguides, wherein the waveguide assembly comprises a surface configured to be coupled to the IC package and each of the plurality of waveguides comprises an opening in the surface configured to be aligned with its respective launcher, and wherein each of the openings has a major dimension and a minor dimension, wherein the major dimension is larger than the minor dimension, and wherein the major dimension of at least the opening of the first waveguide is oriented perpendicular to the major dimension of the opening of the second waveguide.

Vertical launcher for a printed circuit board

An apparatus includes a printed circuit board (PCB), a solder pad, a signal via, a plurality of metalized vias, and a waveguide. The PCB has a first surface opposite a second surface and includes a first metal layer, a second metal layer having a waveguide opening, and a PCB channel region from the waveguide opening in the second metal layer to the second surface. The solder pad is positioned on the first surface of the PCB over the channel region, and the signal via is coupled to the solder pad and a via pad in the second metal layer within the waveguide opening. The plurality of metalized vias extend from the first surface to the second surface of the PCB and form a boundary around the channel region. The waveguide is affixed to the waveguide opening in the second metal layer.

Interposers with millimeter-wave coaxial-to-waveguide transistions

A circuit-board interposer includes contacts on a top surface and a bottom surface and includes a millimeter-wave coaxial transition structure formed using contacts on the top surface and vias extending into the interposer. A first via extends into the interposer to a first depth and is surrounded by additional vias that penetrate the interposer to a second depth smaller than the first depth. The interposer also includes a hollow conductive waveguide structure formed within the interposer that extends from the second depth to a third depth that has a first end and a second end. The first via extends into the waveguide at the first end and an aperture is present at the second end. The coaxial transition and the waveguide together are configured to couple millimeter-wave energy from a feed contact on the top surface of the interposer and direct it to the aperture.

Interposers with millimeter-wave transitions

A compact integrated circuit (IC) that outputs millimeter-wave energy can be assembled into a highly compact package that can utilize ultrasmall contacts and/or contacts arrange with nonstandard pitch. The millimeter-wave IC can be assembled onto an interposer that includes an integrated transition configured to be coupled to a millimeter-wave waveguide on a printed circuit board having contacts that have a standardized size and pitch.

Interposers with millimeter-wave coaxial-to-waveguide transistions

A circuit-board interposer includes contacts on a top surface and a bottom surface and includes a millimeter-wave coaxial transition structure formed using contacts on the top surface and vias extending into the interposer. A first via extends into the interposer to a first depth and is surrounded by additional vias that penetrate the interposer to a second depth smaller than the first depth. The interposer also includes a hollow conductive waveguide structure formed within the interposer that extends from the second depth to a third depth that has a first end and a second end. The first via extends into the waveguide at the first end and an aperture is present at the second end. The coaxial transition and the waveguide together are configured to couple millimeter-wave energy from a feed contact on the top surface of the interposer and direct it to the aperture.

Interposers with Millimeter-Wave Transitions

A compact integrated circuit (IC) that outputs millimeter-wave energy can be assembled into a highly compact package that can utilize ultrasmall contacts and/or contacts arrange with nonstandard pitch. The millimeter-wave IC can be assembled onto an interposer that includes an integrated transition configured to be coupled to a millimeter-wave waveguide on a printed circuit board having contacts that have a standardized size and pitch.

A vertical launcher for a printed circuit board

An apparatus includes a printed circuit board (PCB), a solder pad, a signal via, a plurality of metalized vias, and a waveguide. The PCB has a first surface opposite a second surface and includes a first metal layer, a second metal layer having a waveguide opening, and a PCB channel region from the waveguide opening in the second metal layer to the second surface. The solder pad is positioned on the first surface of the PCB over the channel region, and the signal via is coupled to the solder pad and a via pad in the second metal layer within the waveguide opening. The plurality of metalized vias extend from the first surface to the second surface of the PCB and form a boundary around the channel region. The waveguide is affixed to the waveguide opening in the second metal layer.

Integrated circuit package with integrated waveguide launcher

An integrated circuit package comprising an encapsulant, a semiconductor die in the encapsulant the semiconductor die comprising a plurality of die terminals, an integrated waveguide launcher, wherein the integrated waveguide launcher is connected to one of the die terminals and a land grid array provided on a bottom surface of the package. The land grid array comprises a plurality of package terminals, each package terminal configured to be soldered to a printed circuit board, and an opening, wherein the opening is aligned with the integrated waveguide launcher.

Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect

A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.