SUBSTRATE PROCESSING APPARATUS AND METHODS

Methods of etching include cycles of low temperature etching of a material layer disposed on a substrate, with at least one of the cycles being followed by activation of unreacted etchant deposits during an inert gas plasma treatment. In some embodiments, a method includes: positioning a substrate in a processing chamber; generating, in a first etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; exposing, to the etchant, a portion of a material layer disposed on a substrate maintained at a first temperature; generating an inert gas plasma within the processing chamber; generating, in a second etching cycle, a plasma from a gas mixture within the processing chamber to form a processing gas including an etchant; and heating the substrate to a second temperature to sublimate a byproduct of reaction between the etchant and the material layer. 1. A method for forming a feature on a substrate by etching a trench with high bottom clean efficiency , comprising:positioning a substrate in a processing chamber;generating, in a first etching cycle, a plasma from a gas or gas mixture within the processing chamber to form a processing gas including an etchant;exposing, to the etchant, at least a portion of a material layer disposed on the substrate while maintaining the substrate at a first temperature;generating an inert gas plasma within the processing chamber;generating, in a second etching cycle, a plasma from a gas mixture within the processing chamber to form the processing gas including an etchant; andheating the substrate to a second temperature higher than the first temperature, to sublimate at least one byproduct of reaction between the etchant and a material layer disposed on the substrate.2. The method of claim 1 , wherein the material layer exposed to the etchant comprises a dielectric material.3. The method of claim 2 , wherein the dielectric material includes at least one of an oxide claim 2 , a ...

Methods for etching via atomic layer deposition (ALD) cycles

Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCl x ) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.

Method for Brokering Purchases of Procedural Services

A method for brokering purchases of procedural services between a buyer and at least one professional service provider is a software-based system that negotiates transactions between potential clients and professional service providers by receiving, verifying, and negotiating appointment availabilities and appointment offers while providing privacy to both parties until a transaction is conducted. The system comprises the steps of receiving and indexing appointment openings from providers, receiving and indexing appointment offers from buyers, matching appointment opening with appointment offers, anonymizing appointment offers, and negotiating the exchange of personal information between both parties when a transaction is conducted, as well as provide ancillary product suggestions. The system provides functionality to match a submitted appointment offer anonymously with at least one professional service provider. Additionally, the system provides automated features that improve matching of the appointment opening and the appointment offer by user submitted parameters of system derived value optimums. 1. A method for brokering purchases of procedural services between a buyer and at least one professional service provider by executing computer executable instructions stored on a non-transitory computer readable medium comprises:providing a buyer account, a provider account, an appointment database, and an offer database;receiving an appointment opening from the provider account, wherein the appointment opening contains an offer parameter and a provider identifier;receiving an appointment offer from the buyer account, wherein the appointment offer contains an appointment parameter, an offer value, and a buyer identifier;receiving a transferable payment type from the buyer account, wherein the transferable payment type is associated with the appointment offer;matching the appointment offer to the appointment opening of the appointment database, wherein the appointment ...

Methods And Apparatus For Depositing Tungsten Nucleation Layers

Methods of depositing low resistivity tungsten nucleation layers using alkyl borane reducing agents are described. Alkyl borane reducing agents utilized include compounds with the general formula BR, where R is a C1-C6 alkyl group. Apparatus for performing atomic layer deposition of tungsten nucleation layers using alkyl borane reducing agents are also described. 1. A method of depositing a tungsten nucleation layer , the method comprising sequentially exposing a substrate to a tungsten precursor and an alkyl borane reducing agent , the tungsten precursor comprising one or more of WX , where X is a halogen and a is 4 to 6 , and the alkyl borane reducing agent comprises at least one compound with a general formula BR , where R is a C1-C6 alkyl group.2. The method of claim 1 , wherein the substrate is not exposed to diborane (BH) or silane (SiH).3. The method of claim 1 , wherein the substrate is maintained at a temperature in the range of about 200° C. to about 500° C.4. The method of claim 1 , wherein the substrate is exposed to the tungsten precursor and alkyl borane reducing agent at a pressure in the range of about 2 torr to about 30 torr.5. The method of claim 1 , wherein the tungsten nucleation layer comprises substantially no Si.6. The method of claim 1 , wherein the tungsten nucleation layer comprises substantially no B.7. The method of claim 1 , wherein X comprises fluorine and the tungsten nucleation layer comprises substantially no F.8. The method of claim 1 , wherein the tungsten nucleation layer has a resistivity of less than or equal to about 125 μΩ*cm.9. The method of claim 8 , wherein the tungsten nucleation layer has a resistivity of less than or equal to about 100 μΩ*cm.10. The method of claim 1 , wherein the tungsten nucleation layer is deposited to a thickness in the range of about 15 Å to about 20 Å.11. The method of claim 1 , wherein the alkyl borane reducing agent comprises substantially no B—H bonds.12. A method of depositing a tungsten ...

METHODS FOR DEPOSITING SEMICONDUCTOR FILMS

A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate. 1. A method for forming a film on a substrate , comprising: forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas; and', 'thermally soaking the first layer with at least a hydrogen-based precursor gas., 'depositing a film on the substrate with a process temperature of less than 500 degrees Celsius, by2. The method of claim 1 , further comprising:forming a second layer on the first layer without using the plasma enhanced process and using a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas; andthermally soaking the second layer with at least a hydrogen-based precursor gas.3. The method of claim 1 , further comprising:forming a second layer on the first layer using the plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas; andthermally soaking the second layer with at least a hydrogen-based precursor gas.4. The method of claim 1 , further comprising:{'sup': '2', 'powering the plasma enhanced process with less than approximately 0.283 watts/cm.'}5. The method of claim 1 , further comprising:{'sup': '2', 'powering the plasma enhanced process with less than approximately 0.141 watts/cm.'}6. The method of claim 1 , further comprising:thermally soaking with the at least a hydrogen-based precursor gas for a time duration of approximately 100 milliseconds to approximately 10 seconds.7. The method of ...

In-Situ Pre-Clean For Selectivity Improvement For Selective Deposition

Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma. 1. A method of selectively depositing a film , the method comprising:providing a substrate having a first surface and a second surface different from the first surface;exposing the substrate to a pre-clean plasma comprising one or more of argon or hydrogen to form a pre-cleaned substrate; anddepositing a metal film selectively on the first surface of the pre-cleaned substrate relative to the second surface.2. The method of claim 1 , wherein substantially none of the metal film deposits on the second surface.3. The method of claim 1 , wherein the first surface and the second surface are substantially coplanar.4. The method of claim 3 , wherein the substrate provided has been previously subjected to a chemical-mechanical planarization process.5. The method of claim 1 , wherein the substrate has been subjected to a previous process without exposure to air.6. The method of claim 5 , wherein the substrate has been subjected to a previous process within the same processing chamber.7. The method of claim 1 , wherein the first surface is a metal surface and the second surface is a dielectric surface.8. The method of claim 7 , wherein the metal surface comprises one or more of cobalt claim 7 , copper claim 7 , tungsten or ruthenium.9. The method of claim 8 , wherein the pre-clean plasma removes oxides from the metal.10. The method of claim 1 , wherein the metal film comprises one or more of tungsten claim 1 , cobalt or copper.11. The method of claim 1 , wherein the metal film has a selectivity greater than or ...

Extreme Ultraviolet Mask With Backside Coating

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate having a first side and a second side; a backside coating layer comprising an alloy of tantalum and nickel on the first side of the substrate; a multilayer stack of reflective layers on the second side of the substrate, the multilayer stack of reflective layers including a plurality of reflective layers including reflective layer pairs; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer. 1. An extreme ultraviolet (EUV) mask blank comprising:a substrate having a first side and a second side;a backside coating layer comprising an alloy of tantalum and nickel on the first side of the substrate;a multilayer stack of reflective layers on the second side of the substrate, the multilayer stack of reflective layers including a plurality of reflective layers including reflective layer pairs;a capping layer on the multilayer stack of reflective layers; andan absorber layer on the capping layer.2. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the alloy of tantalum and nickel comprises from about 70 to about 85 wt. % tantalum and from about 15 to about 30 wt. % nickel.3. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the alloy of tantalum and nickel comprises from about 45 to about 55 wt. % tantalum and from about 45 to about 55 wt. % nickel.4. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the alloy of tantalum and nickel comprises from about 30 to about 45 wt. % tantalum and from about 55 to about 70 wt. % nickel.5. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the backside coating layer further comprises 0.1 wt. % to about 10 wt. % of a dopant selected from one or more of boron claim 1 , nitrogen or oxygen.6. The extreme ultraviolet (EUV) mask blank of claim 1 , wherein the backside coating layer comprises ...

Electromigration Improvement Using Tungsten For Selective Cobalt Deposition On Copper Surfaces

Methods to selectively deposit capping layers on a copper surface relative to a dielectric surface comprising separately the copper surface to a cobalt precursor gas and a tungsten precursor gas, each in a separate processing chamber. The copper surface and the dielectric surfaces can be substantially coplanar. The combined thickness of cobalt and tungsten capping films is in the range of about 2 Å to about 60 Å.

Methods To Selectively Deposit Corrosion-Free Metal Contacts

Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed. 1. A method of forming a contact line , the method comprising:providing a substrate surface having a trench with cobalt therein;cleaning a surface of the cobalt; andforming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germanide.2. The method of claim 1 , wherein cleaning the surface of the cobalt comprises baking the substrate in H.3. The method of claim 1 , wherein cleaning the surface of the cobalt comprises exposing the substrate to an Hplasma.4. The method of claim 1 , wherein cleaning the surface of the cobalt comprises sputtering the surface of the cobalt with an argon plasma.5. The method of claim 4 , wherein the argon plasma further comprises additional elements in an amount greater than about 0.5 atomic percent.6. The method of claim 1 , wherein forming the protective layer comprises forming a cobalt silicide.7. The method of claim 6 , wherein forming the cobalt silicide comprises soaking the cobalt in a silicon-containing compound at a temperature in the range of about 200 C to about 600 C.8. The method of claim 7 , wherein the silicon-containing compound comprises one or more of silane claim 7 , disilane claim 7 , trisilane claim 7 , tetrasilane claim 7 , a higher order silane or a silyl halide.9. The method of claim 8 , wherein the silyl halide comprises substantially no fluorine atoms.10. The method of claim 6 , wherein silicide is formed without plasma exposure.11. The method of claim 1 , wherein forming the protective layer comprises soaking the cobalt in a germanium-containing compound at a temperature in the range of about 200 C to about 600 C12. The method of claim 11 , wherein the germanium- ...

METHODS FOR FORMING LOW-RESISTANCE CONTACTS THROUGH INTEGRATED PROCESS FLOW SYSTEMS

Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer. 1. A method of processing a substrate , comprising:exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate;transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; andexposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.2. The method of claim 1 , wherein the tungsten liner layer has a thickness of about 10 to about 50 angstroms.3. The method of claim 1 , wherein the first gas further comprises a hydrogen-containing gas.4. The method of claim 3 , wherein the hydrogen-containing gas is hydrogen (H) claim 3 , or ammonia (NH).5. The method of claim 1 , wherein the first gas further comprises a carrier gas.6. The method of claim 5 , wherein the carrier gas is argon claim 5 , helium claim 5 , or nitrogen.7. The method of ...

Process kit design for in-chamber heater and wafer rotating mechanism

Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

METHODS OF REDUCING OR ELIMINATING DEFECTS IN TUNGSTEN FILM

Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen. 1. A method of reducing or eliminating defects in tungsten film , comprising:reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches, wherein the plurality of trenches comprise a predetermined depth, and a width of less than 20 nanometers, and wherein the predetermined first thickness is substantially uniform throughout the plurality of trenches such that the predetermined first thickness does not substantially change to a second thickness when the first surface is contacted with oxygen.2. The method of claim 1 , wherein reducing or eliminating oxidation further comprises contacting the first surface with a reducing agent.3. The method of claim 2 , wherein the reducing agent is halide type metal precursor to provide a metal halide at the first surface.4. The method of claim 3 , wherein the halide type metal precursor is at least one of TiCl claim 3 , TaCl claim 3 , and combinations thereof.5. The method of claim 3 , wherein the tungsten film comprises a nitride containing tungsten product.6. The method of claim 5 , wherein the nitride containing tungsten product comprises a tungsten nitride film (WN film) claim 5 , tungsten carbonitride film (WCN film) claim 5 , or ...

Process integration approach of selective tungsten via fill

Interconnects and methods for forming interconnects are described and disclosed herein. The interconnect contains a stack formed on a substrate having a via and a trench formed therein, a first metal formed from a first material of a first type deposited in the via, and a second metal formed from a second material of a second type deposited in the trench.

Method for Brokering Purchases of Procedural Services

A method for brokering purchases of procedural services between a buyer and at least one professional service provider is a software-based system that negotiates transactions between potential clients and professional service providers by receiving, verifying, and negotiating appointment availabilities and appointment offers while providing privacy to both parties until a transaction is conducted. The system comprises the steps of receiving and indexing appointment openings from providers, receiving and indexing appointment offers from buyers, matching appointment opening with appointment offers, anonymizing appointment offers, and negotiating the exchange of personal information between both parties when a transaction is conducted, as well as provide ancillary product suggestions. The system provides functionality to match a submitted appointment offer anonymously with at least one professional service provider. Additionally, the system provides automated features that improve matching of the appointment opening and the appointment offer by user submitted parameters of system derived value optimums. 1. A method for brokering purchases of procedural services between a buyer and at least one professional service provider by executing computer executable instructions stored on a non-transitory computer readable medium comprises:providing a buyer account, a provider account, an appointment database, and an offer database;receiving an appointment opening from the provider account, wherein the appointment opening contains an offer parameter and a provider identifier;receiving an appointment offer from the buyer account, wherein the appointment offer contains an appointment parameter, an offer value, and a buyer identifier;receiving a transferable payment type from the buyer account, wherein the transferable payment type is associated with the appointment offer;matching the appointment offer to the appointment opening of the appointment database, wherein the appointment ...

Process kit for a substrate support

Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

METHODS FOR ETCHING VIA ATOMIC LAYER DEPOSITION (ALD) CYCLES

Methods for etching a substrate are provided herein. In some embodiments, a method for etching a substrate disposed within a processing volume of a process chamber includes: (a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCI) for a first period of time and at a first pressure, wherein x is 5 or 6; (b) purging the processing volume of the first gas using an inert gas for a second period of time; (c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and (d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time. 1. A method of processing a substrate disposed within a processing volume of a process chamber , comprising:{'sub': 'x', '(a) exposing a first layer disposed atop the substrate to a first gas comprising tungsten chloride (WCI) for a first period of time and at a first pressure, wherein x is 5 or 6;'}(b) purging the processing volume of the first gas using an inert gas for a second period of time;(c) exposing the substrate to a hydrogen-containing gas for a third period of time to etch the first layer after purging the processing volume of the first gas; and(d) purging the processing volume of the hydrogen-containing gas using the inert gas for a fourth period of time.2. The method of claim 1 , further comprising depositing the first layer atop a first surface of the substrate and within a feature formed in the first surface claim 1 , the feature comprising an opening defined by one or more sidewalls claim 1 , a bottom surface and upper corners claim 1 , wherein a thickness of the first layer is greater proximate the upper corners of the opening than at the sidewalls and bottom of the opening.3. The method of claim 2 , further comprising repeating (a)-(d) to at least partially reduce a thickness of the first layer proximate the upper corners.4. The ...

METHODS OF ETCHBACK PROFILE TUNING

A method of controlling an etch profile includes introducing a tungsten containing gas into a processing chamber; depositing a first tungsten film lining sidewalls of a feature formed in a substrate using the tungsten containing gas in the processing chamber; and treating the first tungsten film in the processing chamber using the tungsten containing gas until a particular etch profile is attained by repeatedly alternating between etching the first tungsten film for a first interval and stopping the etching of the first tungsten film for a second interval by at least one of purging the tungsten containing gas from the process chamber or turning off a power supply that powers the etching of the first tungsten film. 1. A method of controlling an etch profile , comprising:introducing a tungsten containing gas into a processing chamber;depositing a first tungsten film lining sidewalls of a feature formed in a substrate using the tungsten containing gas in the processing chamber; andtreating the first tungsten film in the processing chamber using the tungsten containing gas until a particular etch profile is attained by repeatedly alternating between etching the first tungsten film for a first interval and stopping the etching of the first tungsten film for a second interval by at least one of purging the tungsten containing gas from the process chamber or turning off a power supply that powers the etching of the first tungsten film.2. The method of claim 1 , further comprising:introducing an inert gas into the process chamber prior to purging the tungsten containing gas from the processing chamber.3. The method of claim 2 , wherein the inert gas is at least one of helium or argon.4. The method of claim 1 , wherein etching the first tungsten film includes a plasma process and turning off the power supply that powers the etching of the first tungsten film includes removing RF power.5. The method of claim 1 , wherein etching the first tungsten film includes a plasma ...

Method for forming a metal gapfill

The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

PROCESS INTEGRATION APPROACH OF SELECTIVE TUNGSTEN VIA FILL

Embodiments of the present disclosure generally relate an interconnect formed on a substrate and a method of forming the interconnect thereon. In an embodiment, a via and trench in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack, in the via. A second metal fill material of a second type is deposited on the stack, in the trench. 1. A method of forming an interconnect , comprising:forming a via and a trench in a film stack formed on a substrate;pre-treating a bottom of the via;pre-treating a sidewall of the via;depositing a first metal layer formed from a first material of a first type in the via;treating a top surface of the first metal layer; thendepositing a second metal layer formed from a second material of a second type in the trench.2. The method of claim 1 , wherein pre-treating the bottom of the via claim 1 , comprises:transferring the substrate to a first pre-treatment chamber; andapplying a remote plasma clean process to the film stack, such that an exposed portion of a conductive layer is treated.3. The method of claim 1 , wherein pre-treating the sidewall of the via claim 1 , comprises:transferring the substrate to a first pre-treatment chamber; andapplying a thermal precursor soak to the film stack.4. The method of claim 3 , further comprising applying ultra-violet energy to the film stack.5. (canceled)6. The method of claim 1 , further comprising depositing a barrier seed layer on a top surface of the first metal layer claim 1 , prior to depositing the second metal layer.7. The method of claim 1 , wherein the first material of the first type is the same as the second material of the second type.8. The method of claim 1 , wherein the first material of the first type is different from the second material of the second type.9. The method of claim 1 , ...

Blocker plate for use in a substrate process chamber

Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

Blocker plate for use in a substrate process chamber

Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

In-Situ Pre-Clean For Selectivity Improvement For Selective Deposition

Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

Multi-step anneal of thin films for film densification and improved gap-fill

A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

Multi-step anneal of thin films for film densification and improved gap-fill

A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.

gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials

A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

Multi-step anneal of thin films for film densification and improved gap-fill

A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

Process kit for a substrate support

Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

Detection of contaminants on semiconductor wafers

A method and apparatus for analyzing and comparing in real-time the presence of contaminants in a semiconductor substrate processing system. The analysis is made and compared against a statistical baseline of data points established from the analysis of acceptable substrates undergoing the same procedure. A decision can then be made as to whether to remove the wafers for reprocessing. The comparison is to be made not only with the above baseline, but also in accordance with process dependent information provided by a supplemental data port in the processing tool. Thus, the baseline is dynamic and not a static, pre-determined figure.

Methods to selectively deposit corrosion-free metal contacts

Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.

Methods of thin film process

A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

Gap-fill depositions in the formation of silicon containing dielectric materials

A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

Process kit for a substrate support

Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

Process integration approach of selective tungsten via fill

The present disclosure generally relates to interconnects disposed on a substrate and methods for forming the interconnects. A via and a trench are formed in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack in the via. A second metal fill material of a second type is deposited on the stack in the trench.

Method for forming a metal gapfill

The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.

Extreme ultraviolet mask with backside coating

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate having a first side and a second side; a backside coating layer comprising an alloy of tantalum and nickel on the first side of the substrate; a multilayer stack of reflective layers on the second side of the substrate, the multilayer stack of reflective layers including a plurality of reflective layers including reflective layer pairs; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer.

Extreme ultraviolet mask with backside coating

Methods for forming low-resistance contacts through integrated process flow systems

Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.