28-02-2013 дата публикации
Номер: US20130049009A1
A multi-layer substrate for a vertical light-emitting diode (LED) includes a conductive and reflective base substrate and an n-type gallium nitride (GaN) layer formed on the base substrate. 1. A multi-layer substrate for a vertical light-emitting diode , comprising:a conductive and reflective base substrate; andan n-type gallium nitride (GaN) layer formed on the base substrate.2. The multi-layer substrate of claim 1 , wherein the base substrate comprises a single layer.3. The multi-layer substrate of claim 1 , whereinthe base substrate comprises a conductive layer and a reflective layer formed on the conductive layer, andthe n-type gallium nitride (GaN) layer is formed on the reflective layer.4. The multi-layer substrate of claim 3 , further comprising:a bonding layer interposed between the conductive layer and the reflective layer; andan anti-diffusion layer interposed between the bonding layer and the reflective layer.5. The multi-layer substrate of claim 3 , wherein the conductive layer comprises one selected from the group consisting of Si claim 3 , GaAs claim 3 , GaP claim 3 , AlGaINP claim 3 , Ge claim 3 , SiSe claim 3 , GaN claim 3 , AlInGaN and InGaN.6. The multi-layer substrate of claim 3 , wherein the conductive layer comprises one selected from the group consisting of Al claim 3 , Zn claim 3 , Ag claim 3 , W claim 3 , Ti claim 3 , Ni claim 3 , Au claim 3 , Mo claim 3 , Pt claim 3 , Pd claim 3 , Cu claim 3 , Cr claim 3 , Fe and alloys thereof.7. The multi-layer substrate of claim 3 , wherein the reflective layer comprises one selected from the group consisting of Ag claim 3 , Al claim 3 , Zn claim 3 , Au claim 3 , Pt claim 3 , Ti claim 3 , Ge claim 3 , Cu and Ni.8. The multi-layer substrate of claim 1 , wherein a reflectance of the base substrate is 50% or greater with respect to light that has a wavelength of 300 μm or greater.9. The multi-layer substrate of claim 1 , wherein a coefficient of thermal expansion of the base substrate ranges from 2.5 to 7.5. ...
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