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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Применить Всего найдено 6. Отображено 5.
31-01-2013 дата публикации

METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME

Номер: US20130029473A1
Принадлежит:

A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted. 1. A method of cleaving a substrate , comprising:a first ion implantation step of forming an ion implantation layer by implanting ions into the substrate;an annealing step of annealing the substrate;a second ion implantation step of implanting ions again into the ion implantation layer of the substrate; anda cleaving step of cleaving the substrate along the ion implantation layer by heating the substrate.2. The method of claim 1 , wherein the annealing step and the second ion implantation step in turn are repeated multiple times.3. The method of claim 1 , wherein the ions implanted in the first ion implantation step and the ions implanted in the second ion implantation step are ions of at least one selected from the group consisting of hydrogen claim 1 , helium claim 1 , nitrogen claim 1 , oxygen and argon.4. The method of claim 1 , wherein the annealing step is carried out below a temperature at which the substrate is cleaved along ion implantation layer.5. A method of manufacturing a cleaved substrate claim 1 , comprising:forming an ion implantation layer by implanting ions into a compound semiconductor substrate;annealing the compound semiconductor substrate;implanting ions again into the ion implantation layer of the compound semiconductor substrate;preparing a bonded substrate by bonding the compound semiconductor substrate to a carrier substrate; andcleaving the compound semiconductor substrate along the ion implantation layer by heating the ...

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28-02-2013 дата публикации

Substrate For Vertical Light-Emitting Diode

Номер: US20130049009A1

A multi-layer substrate for a vertical light-emitting diode (LED) includes a conductive and reflective base substrate and an n-type gallium nitride (GaN) layer formed on the base substrate. 1. A multi-layer substrate for a vertical light-emitting diode , comprising:a conductive and reflective base substrate; andan n-type gallium nitride (GaN) layer formed on the base substrate.2. The multi-layer substrate of claim 1 , wherein the base substrate comprises a single layer.3. The multi-layer substrate of claim 1 , whereinthe base substrate comprises a conductive layer and a reflective layer formed on the conductive layer, andthe n-type gallium nitride (GaN) layer is formed on the reflective layer.4. The multi-layer substrate of claim 3 , further comprising:a bonding layer interposed between the conductive layer and the reflective layer; andan anti-diffusion layer interposed between the bonding layer and the reflective layer.5. The multi-layer substrate of claim 3 , wherein the conductive layer comprises one selected from the group consisting of Si claim 3 , GaAs claim 3 , GaP claim 3 , AlGaINP claim 3 , Ge claim 3 , SiSe claim 3 , GaN claim 3 , AlInGaN and InGaN.6. The multi-layer substrate of claim 3 , wherein the conductive layer comprises one selected from the group consisting of Al claim 3 , Zn claim 3 , Ag claim 3 , W claim 3 , Ti claim 3 , Ni claim 3 , Au claim 3 , Mo claim 3 , Pt claim 3 , Pd claim 3 , Cu claim 3 , Cr claim 3 , Fe and alloys thereof.7. The multi-layer substrate of claim 3 , wherein the reflective layer comprises one selected from the group consisting of Ag claim 3 , Al claim 3 , Zn claim 3 , Au claim 3 , Pt claim 3 , Ti claim 3 , Ge claim 3 , Cu and Ni.8. The multi-layer substrate of claim 1 , wherein a reflectance of the base substrate is 50% or greater with respect to light that has a wavelength of 300 μm or greater.9. The multi-layer substrate of claim 1 , wherein a coefficient of thermal expansion of the base substrate ranges from 2.5 to 7.5. ...

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18-04-2013 дата публикации

Bonded Substrate And Method Of Manufacturing The Same

Номер: US20130093059A1

A bonded substrate, the surface roughness of which is reduced, and a method of manufacturing the same. The bonded substrate includes a base substrate and an intermediate layer disposed on the base substrate. The intermediate layer has a greater bubble diffusivity than the base substrate. A thin film layer is bonded onto the intermediate layer, and has a different chemical composition from the base substrate.

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18-04-2013 дата публикации

Bonded substrate and method of manufacturing the same

Номер: US20130093063A1

A bonded substrate having a plurality of grooves and a method of manufacturing the same. The method includes the following steps of implanting ions into a first substrate, thereby forming an ion implantation layer, bonding the first substrate to a second substrate having a plurality of grooves in one surface thereof such that the first substrate is bonded to the one surface, and cleaving the first substrate along the ion implantation layer.

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13-05-2013 дата публикации

接合基板及びその製造方法

Номер: JP2013089960A

【課題】本発明は、接合基板及びその製造方法に関し、より詳しくは、複数の溝を有する接合基板及びその製造方法に関する。 【解決手段】このために、本発明は、第1の基板にイオンを注入してイオン注入層を形成するイオン注入段階と、前記第1の基板を複数の溝が形成された第2の基板に接合する接合段階、及び前記第1の基板を前記イオン注入層を基準に分離する分離段階と、を含むことを特徴とする接合基板の製造方法を提供する。 【選択図】図3

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