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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 4. Отображено 4.
16-10-2003 дата публикации

Early response to plasma/charging damage by special pattern design of active region

Номер: US20030194822A1
Автор: Bor-Cheng Chen, Yu-Feng Tai
Принадлежит: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY

A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.

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Номер записи: 1
16-08-2005 дата публикации

Early response to plasma/charging damage by special pattern design of active region

Номер: US0006929965B2
Автор: Bor-Cheng Chen, Yu-Feng Tai, CHEN BOR-CHENG, TAI YU-FENG
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd., TAIWAN SEMICONDUCTOR MFG, TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.

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Номер записи: 2
10-07-2001 дата публикации

Method for fabricating a stress buffered bond pad

Номер: US0006258706B1
Автор: Ho-Yin Yiu, Lin-June Wu, Bor-Cheng Chen, J. H. Horng, YIU HO-YIN, WU LIN-JUNE, CHEN BOR-CHENG, HORNG J H, HORNG J. H.
Принадлежит: Taiwan Semiconductor Manufacturing Company, Ltd, TAIWAN SEMICONDUCTOR MFG, TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD

A method for forming a chess-board patterned bond pad structure with stress buffered characteristics and the bond pad structure formed are disclosed. In one method, a multiplicity of field oxide regions are first formed in the surface of a silicon substrate. A conductive layer such as polycide is then deposited and formed on the substrate to form a stepped surface with a metal layer subsequently deposited on top of the conductive layer to form a bond pad. The stepped structure reproduced on the metal layer serves to distribute bonding stresses during a wire bonding process such that bond pad lift-off defects are substantially eliminated. In another method, the conductive layer is first formed into conductive gates with insulating sidewalls formed subsequently. Similarly stepped surface on a metal layer can be obtained to realize the stress buffered characteristics of the novel method.

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Номер записи: 3
15-07-2003 дата публикации

Early response to plasma/charging damage by special pattern design of active region

Номер: US0006593157B1
Автор: Bor-Cheng Chen, Yu-Feng Tai, CHEN BOR-CHENG, TAI YU-FENG
Принадлежит: Taiwan Semiconductor Manufacturing Company, TAIWAN SEMICONDUCTOR MFG, TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY

A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.

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Номер записи: 4