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Применить Всего найдено 9. Отображено 7.
01-03-2012 дата публикации

Semiconductor device

Номер: US20120049278A1
Автор: Hyung-Suk Choi, In-Taek OH, Jae-han Cha, Jin-Young Chae, Ju-ho Kim, Kyung-Ho Lee, Sun-Goo KIM
Принадлежит: Individual

The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.

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Номер записи: 1
23-01-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140021541A1
Автор: CHA Jae-Han, CHAE Jin-Young, CHOI Hyung-Suk, Kim Ju-Ho, KIM Sun-Goo, Lee Kyung-Ho, OH In-Taek
Принадлежит: MAGNACHIP SEMICONDUCTOR, LTD.

A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. 1. A semiconductor device , comprising:a second conductive-type deep well configured above a substrate to include a first ion implantation region and a first diffusion region;a first conductive-type first well configured in the second conductive-type deep well to contact the first diffusion region; anda gate electrode configured above the substrate to extend across portions of both the first ion implantation region and the first diffusion region, the gate electrode having one end portion thereof overlapped with a portion of the first conductive-type first well,wherein the first diffusion region has impurity doping concentration that is the highest at an interface between the first ion implantation region and the first diffusion region, and that decreases as moving farther away from the interface between the first ion implantation region and the first diffusion region.2. The semiconductor device of claim 1 , further comprising:a second conductive-type buried impurity layer configured below the second conductive-type deep well, the second conductive-type buried impurity layer having a uniform impurity doping concentration.3. The semiconductor device of claim 2 , wherein the uniform impurity doping concentration of the second ...

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Номер записи: 2
23-01-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140021542A1
Автор: CHA Jae-Han, CHAE Jin-Young, CHOI Hyung-Suk, Kim Ju-Ho, KIM Sun-Goo, Lee Kyung-Ho, OH In-Taek
Принадлежит: MAGNACHIP SEMICONDUCTOR, LTD.

A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface. 1. A semiconductor device , comprising:a second conductive-type deep well configured above a first conductive-type substrate;a second conductive-type buried impurity layer configured below the second conductive-type deep well to include an ion implantation region and a diffusion region;a first conductive-type first well configured in the diffusion region of the second conductive-type deep well;a gate electrode configured above the substrate to extend across portions of both the first ion implantation region and the first diffusion region, the gate electrode having one end portion thereof overlapped with a portion of the first conductive-type first well,wherein the diffusion region has impurity doping concentration that is the highest at an interface between the ion implantation region and the diffusion region, and that decreases as moving farther away from the interface between the ion implantation region and the diffusion region.2. The semiconductor device of claim 1 , wherein the ion implantation region has impurity doping concentration that is higher than that of the second conductive-type deep well.3. The semiconductor device of claim 1 , further comprising:a first conductive-type bulk pick-up region configured in the first ...

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Номер записи: 3
30-01-2014 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20140027846A1
Автор: CHA Jae-Han, CHAE Jin-Young, CHOI Hyung-Suk, Kim Ju-Ho, KIM Sun-Goo, Lee Kyung-Ho, OH In-Taek
Принадлежит: MAGNACHIP SEMICONDUCTOR, LTD.

A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode. 1. A semiconductor device , comprising:a second conductive-type well configured over a substrate;a first conductive-type body region configured over the second conductive-type well;a gate electrode which overlaps a portion of the first conductive-type body region; anda first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode,wherein the first conductive-type channel extension region is formed in the second conductive-type well in contact with the first conductive-type body region.2. A semiconductor device , comprising:a second conductive-type well configured over a substrate;a first conductive-type body region configured over the second conductive-type well;a gate electrode which overlaps a portion of the first conductive-type body region; anda first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.wherein the first conductive-type channel extension region is formed in the second conductive-type well and is spaced apart from the first conductive-type body region.3. A semiconductor device , comprising:a second conductive-type well configured over a substrate;a first conductive-type body region configured over the second conductive-type well;a gate electrode which overlaps a portion of the first conductive-type body region; and a device isolation layer configured over the substrate to define an active region;', 'a first conductive-type pickup region disposed in the first conductive-type body region;', 'a second conductive-type source region disposed ...

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Номер записи: 4
30-01-2014 дата публикации

Semiconductor device and method for fabricating semiconductor device

Номер: US20140030862A1
Автор: Hyung-Suk Choi, In-Taek OH, Jae-han Cha, Jin-Young Chae, Ju-ho Kim, Kyung-Ho Lee, Sun-Goo KIM
Принадлежит: MagnaChip Semiconductor Ltd

A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.

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Номер записи: 5
05-06-2014 дата публикации

Semiconductor device

Номер: US20140151793A1
Автор: Hyung-Suk Choi, In-Taek OH, Jae-han Cha, Jin-Young Chae, Ju-ho Kim, Kyung-Ho Lee, Sun-Goo KIM
Принадлежит: Individual

A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.

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Номер записи: 6
09-06-2005 дата публикации

Recombinant peptide vector comprising the gene for treatment for autoimmune diseases.

Номер: WO2005052166A1
Автор: Eun-Wha Choi, Young-Jin Chae
Принадлежит: Eun-Wha Choi, Young-Jin Chae

The present invention provides a recombinant peptide vector comprising a leader peptide, linker DNAs and a DNA construct formed by operably linking expression control sequences with a therapeutic gene encoding a fusion protein where the extracellular domain of CTLA4 is bound to the Fc fragment of immunoglobulin, wherein the leader peptide is linked to both ends of the DNA construct by the linker DNAs. Also, the present invention provides a method for preparing the recombinant peptide vector, and a pharmaceutical composition for the treatment of autoimmune diseases, which comprises a pharmaceutically effective amount of the recombinant peptide vector, and a pharmaceutically acceptable carrier.

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Номер записи: 7