02-04-2014 дата публикации
Номер: CN103700590A
Принадлежит:
The invention relates to a manufacture method for realizing a bipolar IC (integrated circuit) structure of a Schottky diode and the bipolar IC structure, and belongs to the technical field of semiconductors. The method comprises the steps of forming an N well, a base region and a P-layer of an epitaxial layer through a directrix isoplane technology, forming a Schottky contact hole through primary etching, and finally evaporating aluminum, so as to form a silicon compound Schottky barrier layer in the Schottky contact hole. The method ensures that the technology does not require additional Schottky contact photoetching, and noble metal, such as titanium, platinum, palladium and the like, simultaneously keeps the stability and the repeatability of a Schottky barrier formed by the noble metal, such as titanium, platinum, palladium and the like, is compatible with the universal bipolar IC production technology, effectively simplifies the technical process, and reduces the production cost, and ...
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