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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 10. Отображено 10.
30-06-2016 дата публикации

HIGH CONDUCTANCE PROCESS KIT

Номер: US20160189936A1
Автор: Bonnie T. CHIA, Cheng-Hsiung TSAI, CHIA BONNIE T, TSAI CHENG-HSIUNG, CHIA BONNIE T.
Принадлежит:

Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield. 1. A process kit for a plasma processing chamber , the apparatus comprising: an interior cylindrical liner defining a cylindrical volume, wherein a bottom edge of the cylindrical liner defines a plane; and', 'a circular interior top surface, wherein a center of the circular interior top surface includes a circular aperture, wherein the circular interior top surface includes a first portion extending radially outward from the aperture in which a distance from the interior top surface to the plane increases as the distance from the aperture increases, wherein the circular top surface includes a second portion extending radially outward from the first portion in which the interior top surface smoothly curves toward and mates with an inward-facing surface of the cylindrical liner., 'an upper shield comprising2. The process kit of claim 1 , further comprising a gas diffuser arranged in the circular aperture of the upper shield claim 1 , the gas diffuser comprising:a cylindrical housing that defines a cylindrical exterior surface, wherein the cylindrical exterior surface and the circular aperture define an annular gap;an interior cylindrical cavity in a side of the housing facing away from the cylindrical volume, wherein ...

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Номер записи: 1
29-09-2015 дата публикации

Finned shutter disk for a substrate process chamber

Номер: US0009147558B2
Автор: Bonnie T. Chia, Song-Moon Suh, Cheng-Hsiung Matthew Tsai, Robert Dinsmore, Glen T. Mori, CHIA BONNIE T, SUH SONG-MOON, TSAI CHENG-HSIUNG MATTHEW, DINSMORE ROBERT, MORI GLEN T, CHIA BONNIE T., MORI GLEN T.
Принадлежит: APPLIED MATERIALS, INC., APPLIED MATERIALS INC

Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body.

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Номер записи: 2
17-07-2014 дата публикации

FINNED SHUTTER DISK FOR A SUBSTRATE PROCESS CHAMBER

Номер: US20140196848A1
Автор: BONNIE T. CHIA, SONG-MOON SUH, CHENG-HSIUNG MATTHEW TSAI, ROBERT DINSMORE, GLEN T. MORI, CHIA BONNIE T, SUH SONG-MOON, TSAI CHENG-HSIUNG MATTHEW, DINSMORE ROBERT, MORI GLEN T, CHIA BONNIE T., MORI GLEN T.
Принадлежит: APPLIED MATERIALS, INC.

Shutter disks for use in process chambers are provided herein. In some embodiments, a shutter disk for use in a process chamber may include a body having an outer perimeter, a top surface of the body, wherein the top surface includes a central portion having a substantially horizontal planar surface, and at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter, and a bottom surface of the body. 1. A shutter disk for use in a process chamber , comprising:a body having an outer perimeter; a central portion having a substantially horizontal planar surface, and', 'at least one angled structure disposed radially outward of the central portion, each of the at least one angled structure having a top portion and an angled surface disposed at a downward angle in a radially outward direction from the top portion toward the outer perimeter; and, 'a top surface of the body, wherein the top surface includes'}a bottom surface of the body.2. The shutter disk of claim 1 , wherein the downward angle of the angled surface is about 15 degrees to about 60 degrees.3. The shutter disk of claim 1 , wherein the at least one angled structure includes a plurality of angled structures.4. The shutter disk of claim 3 , wherein each of the plurality of angled structures is radially separated by a substantially horizontal planar surface.5. The shutter disk of claim 3 , further comprising:a plurality of radial support ridges, wherein each radial support ridge extends across at least two of the plurality of angled structures.6. The shutter disk of claim 5 , wherein the plurality of radial support ridges includes a first set of radial support ridges extending radially inward from the top portion of the outermost angled structure claim 5 , and a second set of radial support ridges that ...

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Номер записи: 3
10-05-2018 дата публикации

HIGH CONDUCTANCE PROCESS KIT

Номер: US20180130644A1
Автор: CHIA BONNIE T., TSAI Cheng Hsiung
Принадлежит:

Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield. 1. A process kit for a plasma processing chamber , the process kit comprising: an annular ring;', 'an annular channel in a top surface of the annular ring, wherein a radially-outward-facing liner and a bottom liner include a circularly-curved liner portion there between, and wherein the annular channel includes a radially-outward-projecting undercut portion;', 'a first plurality of slots between the undercut portion and the top surface of the annular ring, wherein the first plurality of slots are arranged around a circumference of the annular ring; and', 'a second plurality of slots between the undercut portion and a bottom surface of the annular ring, wherein the second plurality of slots are arranged around a circumference of the annular ring., 'a lower shield comprising2. The process kit of claim 1 , wherein the circularly-curved liner portion of the annular channel defines a radius of curvature of between 0.2 inches and 0.6 inches.3. The process kit of claim 1 , wherein the first plurality of slots defines an aspect ratio between 3 to 1 and 6 to 1.4. The process kit of claim 1 , wherein the second plurality of slots defines an aspect ratio between 3 to 1 and 6 to 1.5. The process kit of claim 1 , wherein the ...

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Номер записи: 4
11-06-2020 дата публикации

PHYSICAL VAPOR DEPOSITION (PVD) ELECTROSTATIC CHUCK WITH IMPROVED THERMAL COUPLING FOR TEMPERATURE SENSITIVE PROCESSES

Номер: US20200185247A1
Автор: CHIA BONNIE T, MARSHALL Ross, MATSUSHITA Tomoharu, Tsai Cheng-Hsiung
Принадлежит:

Embodiments of an electrostatic chuck are provided herein. In some embodiments an electrostatic chuck includes an electrode, a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils, and gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body. 1. An electrostatic chuck , comprising:an electrode;a dielectric body having a disk shape and covering the electrode, the dielectric body including a central region and a peripheral region, and the dielectric body including a lower surface having a central opening and an upper surface having a first opening in the central region and a plurality of second openings in the peripheral region, wherein the upper surface includes a plurality of protrusions and a diameter of each of the plurality of second openings is greater than 25.0 mils;gas distribution channels that extend from the lower surface to the upper surface to define a plenum within the dielectric body, the gas distribution channels including a first channel that extends from the central opening to the first opening, a plurality of radial channels that extend from the first channel to an annular channel disposed in the peripheral region, and a plurality of second channels that extend from the annular channel to the plurality of second openings; anda heater disposed in the dielectric body.2. The electrostatic chuck of claim 1 , wherein each of the plurality of radial channels extend between adjacent second channels.3. The electrostatic chuck of claim 2 , wherein the plurality of ...

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Номер записи: 5
23-07-2020 дата публикации

Method and Apparatus for cleaning a substrate

Номер: US20200230782A1
Автор: Bonnie T. Chia, Cheng-Hsiung Tsai, Dhritiman Subha Kashyap, Eric Rieske, Pulkit Agarwal, Song-Moon Suh, Xiaoxiong Yuan
Принадлежит: Applied Materials Inc

Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.

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Номер записи: 6
03-11-2016 дата публикации

Methods and Apparatus for Cleaning a Substrate

Номер: US20160322239A1
Автор: Bonnie T. Chia, Cheng-Hsiung Tsai, Dhritiman Subha Kashyap, Eric Rieske, Pulkit Agarwal, Song-Moon Suh, Xiaoxiong Yuan
Принадлежит: Applied Materials Inc

Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus includes: a substrate support to support a substrate along an edge of the substrate, wherein the substrate further includes a first side and an opposing second side having contaminants disposed on the second side; a showerhead disposed a first distance of about 1.5 mm to about 4.4 mm opposite the substrate support and facing the first side of the substrate; and one or more nozzles disposed a second distance of about 1 inch to about 2 inches beneath the substrate support to discharge a mixture of solid and gaseous carbon dioxide toward the contaminants on the second side of the substrate, and wherein the one or more nozzles have an angle of about 20 to about 40 degrees.

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Номер записи: 7
03-12-2015 дата публикации

Lift pin assembly

Номер: US20150348823A1
Автор: Aravind Miyar Kamath, Bonnie T. Chia, Cheng-Hsiung Matthew TSAI, Jallepally Ravi, Manjunatha KOPPA, Vinod Konda Purathe
Принадлежит: Applied Materials Inc

Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.

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Номер записи: 8
10-12-2015 дата публикации

Lift pin assembly

Номер: WO2015187453A1
Автор: Aravind Miyar Kamath, Bonnie T. Chia, Cheng-Hsiung Matthew TSAI, Jallepally Ravi, Manjunatha KOPPA, Vinod Konda Purathe
Принадлежит: Applied Materials, Inc.

Embodiments of lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes an elongate base formed of a first material and having a first feature formed in a distal end of the base to interface with and removably support a tip; and a tip formed of a second material different than the first material and having a support surface on a first side of the tip and an opposing second side of the tip, wherein the opposing second side includes a second feature to mate with the first feature of the base to removably retain the tip on the distal end of the base.

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Номер записи: 9
09-01-2018 дата публикации

High conductance process kit

Номер: US09865437B2
Автор: Bonnie T. Chia, Cheng-Hsiung Tsai
Принадлежит: Applied Materials Inc

Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.

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Номер записи: 10