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Применить Всего найдено 5. Отображено 3.
24-09-2020 дата публикации

Semiconductor package using cavity substrate and manufacturing methods

Номер: US20200303315A1

A semiconductor package includes a cavity substrate, a semiconductor die, and an encapsulant. The cavity substrate includes a redistribution structure and a cavity layer on an upper surface of the redistribution structure. The redistribution structure includes pads on the upper surface, a lower surface, and sidewalls adjacent the upper surface and the lower surface. The cavity layer includes an upper surface, a lower surface, sidewalls adjacent the upper surface and the lower surface, and a cavity that exposes pads of the redistribution structure. The semiconductor die is positioned in the cavity. The semiconductor die includes a first surface, a second surface, sidewalls adjacent the first surface and the second surface, and attachment structures that are operatively coupled to the exposed pads. The encapsulant encapsulates the semiconductor die in the cavity and covers sidewalls of the redistribution structure.

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17-10-2019 дата публикации

Semiconductor package using cavity substrate and manufacturing methods

Номер: US20190318994A1
Принадлежит: Amkor Technology Inc

A semiconductor package includes a cavity substrate, a semiconductor die, and an encapsulant. The cavity substrate includes a redistribution structure and a cavity layer on an upper surface of the redistribution structure. The redistribution structure includes pads on the upper surface, a lower surface, and sidewalls adjacent the upper surface and the lower surface. The cavity layer includes an upper surface, a lower surface, sidewalls adjacent the upper surface and the lower surface, and a cavity that exposes pads of the redistribution structure. The semiconductor die is positioned in the cavity. The semiconductor die includes a first surface, a second surface, sidewalls adjacent the first surface and the second surface, and attachment structures that are operatively coupled to the exposed pads. The encapsulant encapsulates the semiconductor die in the cavity and covers sidewalls of the redistribution structure.

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24-11-2022 дата публикации

SEMICONDUCTOR PACKAGE USING CAVITY SUBSTRATE AND MANUFACTURING METHODS

Номер: US20220375807A1
Принадлежит:

A semiconductor package includes a cavity substrate, a semiconductor die, and an encapsulant. The cavity substrate includes a redistribution structure and a cavity layer on an upper surface of the redistribution structure. The redistribution structure includes pads on the upper surface, a lower surface, and sidewalls adjacent the upper surface and the lower surface. The cavity layer includes an upper surface, a lower surface, sidewalls adjacent the upper surface and the lower surface, and a cavity that exposes pads of the redistribution structure. The semiconductor die is positioned in the cavity. The semiconductor die includes a first surface, a second surface, sidewalls adjacent the first surface and the second surface, and attachment structures that are operatively coupled to the exposed pads. The encapsulant encapsulates the semiconductor die in the cavity and covers sidewalls of the redistribution structure. 1. A semiconductor package , comprising: a redistribution structure comprising a redistribution structure upper surface having a plurality of pads, a redistribution structure lower surface opposite the redistribution structure upper surface, and one or more redistribution structure sidewalls adjacent the redistribution structure upper surface and the redistribution structure lower surface; and', 'a cavity layer on the redistribution structure upper surface, the cavity layer comprising a cavity layer upper surface, a cavity layer lower surface opposite the cavity layer upper surface, one or more cavity layer sidewalls adjacent the cavity layer upper surface and the cavity layer lower surface, and a cavity in the cavity layer upper surface that exposes one or more pads of the plurality of contacts pads;, 'a cavity substrate includinga semiconductor die in the cavity of the cavity layer, the semiconductor die comprising a semiconductor die first surface, a semiconductor die second surface opposite the semiconductor die first surface, one or more semiconductor ...

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