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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Форма поиска

Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 118. Отображено 118.
30-06-2005 дата публикации

Disc burner and its control method

Номер: US20050141386A1

A disc burner and its control method applicable to high speed disc burner, to solve disc burning failure problem due to burning speed exceeding encoding speed. A buffer is inserted to store the encoded data in groups, and these data groups are used in sequence for disc burning purpose. Therefore, the waiting time of the writing laser is spread out and does not exceed the threshold waiting time, and there is no disc burning failure problem.

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10-09-2013 дата публикации

Electronic device and keyboard module thereof

Номер: US0008531827B2

An electronic device is provided, and includes a keyboard module and a display module. The keyboard module includes a first key area, a second key area, and a joining area disposed between the first key area and the second key area. The display module has a connecting surface detachably disposed on the joining area and electrical connected to the keyboard module. The display module is stood on the keyboard module to face a first direction in a first operation mode and a second direction is opposite to the first direction in a second operation mode.

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26-06-2012 дата публикации

Focusing member and optoelectronic device

Номер: US0008208768B2

A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

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20-03-2012 дата публикации

Optoelectronic device and method of forming the same

Номер: US0008139907B2

An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

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23-06-2015 дата публикации

Portable electronic device

Номер: US000D732498S1
Принадлежит: HTC CORPORATION

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13-11-2012 дата публикации

Semiconductor device and wafer structure

Номер: US0008310065B2

A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

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15-10-2013 дата публикации

Semiconductor photodetector structure and the fabrication method thereof

Номер: US0008558336B2

A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.

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19-05-2011 дата публикации

Semiconductor Optoelectronic Structure and the Fabricating Method Thereof

Номер: US20110115040A1
Принадлежит:

A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.

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16-08-2012 дата публикации

MEMS and Protection Structure Thereof

Номер: US20120205808A1
Принадлежит: United Microelectronics Corp

A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

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06-10-2015 дата публикации

Method for fabricating MEMS device with protection rings

Номер: US0009150407B2

A method for fabricating a microelectromechanical system (MEMS) device of the present invention includes the following steps: providing a substrate, comprising a circuit region and a MEMS region separated from each other; forming an interconnection structure on the substrate in the circuit region, and simultaneously forming a plurality of dielectric layers and a first electrode on the substrate in the MEMS region, wherein the first electrode comprises at least two metal layers formed in the dielectric layers and a protection ring formed in the dielectric layers and connecting two adjacent metal layers, so as to define an enclosed space between the two adjacent metal layers; forming a second electrode on the first electrode; and removing the dielectric layers outside the enclosed space in the MEMS region to form a cavity between the electrodes.

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28-04-2011 дата публикации

FOCUSING MEMBER AND OPTOELECTRONIC DEVICE

Номер: US20110097033A1
Принадлежит: UNITED MICROELECTRONICS CORP.

A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

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01-01-2015 дата публикации

METHOD OF FABRICATING INTEGRATED STRUCTURE FOR MEMS DEVICE AND SEMICONDUCTOR DEVICE

Номер: US20150004732A1
Принадлежит: United Microelectronics Corp

A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers; forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in a etch stopping device region; forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region; and performing an etching process to remove the third dielectric layers in the MEMS region.

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14-12-2010 дата публикации

MEMS structure with metal protection rings

Номер: US0007851975B2

A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.

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28-10-2014 дата публикации

Integrated structure for MEMS device and semiconductor device and method of fabricating the same

Номер: US0008872287B2

The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping element is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping element has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.

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02-07-2009 дата публикации

KEY STRUCTURE

Номер: US20090167510A1
Принадлежит: HTC Corporation

A key structure including at least two protruding keys and a key frame is provided. The at least two protruding keys are arrayed adjacently. Each of the at least two protruding keys has a first side edge, a second side edge and a protrusion. The second side edge is opposite to the first side edge. The protrusion has a curved-convex surface, a first side surface and a second side surface. The curved-convex surface is getting protruding inwardly from the first side edge and the second side edge. The top end of the curved-convex surface has a crest line. The first side surface passes through the end points of the first side edge, the second side edge and the crest line in the same side. The second side surface is opposite to the first side surface. The key frame is used for carrying the at least two protruding keys.

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11-06-2013 дата публикации

Method for fabricating integrated circuit

Номер: US0008460960B2

A method for fabricating integrated circuit is provided. First, a first interconnect structure including a plurality of first dielectric layers and a plurality of first conductive patterns stacked therewith alternately is formed on a MEMS region of a conductive substrate. Next, an interlayer is formed on the first interconnect structure and covering the first conductive patterns. Next, a poly silicon mask layer corresponding to the first conductive patterns is formed on the interlayer and exposing a portion of the media layer. Next, the portion of the interlayer exposed by the poly silicon mask layer and a portion of the first dielectric layer corresponding thereto are removed to form a plurality of openings. Then, a portion of the conductive substrate in the MEMS region is removed.

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10-10-2017 дата публикации

Structure of MEMS electroacoustic transducer

Номер: US0009783408B2

A structure of micro-electro-mechanical systems (MEMS) electroacoustic transducer is disclosed. The MEMS electroacoustic transducer includes a substrate having a MEMS device region, a diaphragm having openings and disposed in the MEMS device region, a silicon material layer disposed on the diaphragm and sealing the diaphragm, and a conductive pattern disposed beneath the diaphragm in the MEMS device region. Preferably, a first cavity is also formed between the diaphragm and the substrate.

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17-01-2012 дата публикации

Method for fabricating MEMS structure

Номер: US0008096048B2

A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and a MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form a MEMS device in the MEMS region.

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19-05-2011 дата публикации

MEMS STRUCTURE AND METHOD FOR MAKING THE SAME

Номер: US20110115039A1
Принадлежит: United Microelectronics Corp

A micro electro mechanical system (MEMS) structure is disclosed. The MEMS structure includes a backplate electrode and a 3D diaphragm electrode. The 3D diaphragm electrode has a composite structure so that a dielectric is disposed between two metal layers. The 3D diaphragm electrode is adjacent to the backplate electrode to form a variable capacitor together.

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31-03-2020 дата публикации

Portable electronic device

Номер: US000D879754S1
Принадлежит: HTC CORPORATION

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10-02-2011 дата публикации

MEMS and a Protection Structure Thereof

Номер: US20110031624A1
Принадлежит:

A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

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13-10-2011 дата публикации

Wafer Level Package of MEMS Microphone and Manufacturing Method thereof

Номер: US20110248364A1
Принадлежит: United Microelectronics Corporation

A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

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18-04-2013 дата публикации

BOND PAD STRUCTURE AND FABRICATING METHOD THEREOF

Номер: US20130093104A1
Принадлежит: UNITED MICROELECTRONICS CORPORATION

A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.

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22-03-2007 дата публикации

METHOD OF FABRICATING CONDUCTIVE LAYER

Номер: US20070066055A1
Принадлежит: United Microelectronics Corp

A method of fabricating a patterned conductive layer is provided. First, a conductive layer whose material includes at least aluminum-copper (Al—Cu) alloy is formed on a substrate. Then, a heat treatment process is performed to heat the conductive layer to a temperature higher than the phase change temperature of the Al—Cu alloy. Next, the conductive layer is patterned. The method in the present invention can avoid the formation of metallic educt and facilitate subsequent etching processes.

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14-04-2011 дата публикации

Semiconductor Structure

Номер: US20110084394A1
Принадлежит:

A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.

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04-03-2010 дата публикации

MEMS STRUCTURE AND METHOD FOR FABRICATING THE SAME

Номер: US20100052179A1
Принадлежит: UNITED MICROELECTRONICS CORP.

A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.

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04-11-2008 дата публикации

Portable electronic device

Номер: US000D579932S1
Автор: Chien-Hsin Huang
Принадлежит: HTC Corporation

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29-04-2014 дата публикации

MEMS structure and method for making the same

Номер: US0008710601B2

A micro electro mechanical system (MEMS) structure is disclosed. The MEMS structure includes a backplate electrode and a 3D diaphragm electrode. The 3D diaphragm electrode has a composite structure so that a dielectric is disposed between two metal layers. The 3D diaphragm electrode is adjacent to the backplate electrode to form a variable capacitor together.

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19-11-2013 дата публикации

Integrated circuit and fabricating method thereof

Номер: US0008587078B2

A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive ...

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24-01-2013 дата публикации

METHOD FOR FABRICATING INTEGRATED CIRCUIT

Номер: US20130023081A1
Принадлежит: UNITED MICROELECTRONICS CORP.

A method for fabricating integrated circuit is provided. First, a first interconnect structure including a plurality of first dielectric layers and a plurality of first conductive patterns stacked therewith alternately is formed on a MEMS region of a conductive substrate. Next, an interlayer is formed on the first interconnect structure and covering the first conductive patterns. Next, a poly silicon mask layer corresponding to the first conductive patterns is formed on the interlayer and exposing a portion of the media layer. Next, the portion of the interlayer exposed by the poly silicon mask layer and a portion of the first dielectric layer corresponding thereto are removed to form a plurality of openings. Then, a portion of the conductive substrate in the MEMS region is removed. 1. A method for fabricating an integrated circuit , comprising:providing a conductive substrate with a logical circuit region and a MEMS region;forming a first interconnect structure comprising a plurality of first dielectric layers and a plurality of first conductive patterns on the MEMS region of the conductive substrate, the first dielectric layers and the first conductive patterns alternately stacked on the MEMS region of the conductive substrate;forming an interlayer to cover the first conductive patterns on the first interconnect structure;forming a poly-Si mask layer corresponding to the first conductive patterns and exposing a portion of the interlayer on the interlayer;removing the portion of the interlayer exposed by the poly-Si mask layer and corresponding portions of the first dielectric layers through using the poly-Si mask layer as a mask for forming a plurality of openings within the first interconnect structure; and removing a portion of the conductive substrate in the MEMS region.2. The method as claimed in claim 1 , further comprises the step of forming a plurality of shallow trench isolations in the conductive substrate.3. The method as claimed in claim 2 , wherein the ...

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30-06-2011 дата публикации

OPTOELECTRONIC DEVICE AND METHOD OF FORMING THE SAME

Номер: US20110158581A1
Принадлежит: UNITED MICROELECTRONICS CORP.

An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

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26-05-2020 дата публикации

Earphones and case

Номер: US000D885362S1
Автор: Chien-Hsin Huang
Принадлежит: HMD Global Oy

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03-11-2020 дата публикации

Voltage dividing resistor

Номер: US0010825588B2

Herein disclosed is a voltage dividing resistor comprising a resistance bar and a plurality of dividing connectors. The resistance bar has a first end and a second end and provides a first current path, which stretches from the first end to the second end along the resistance bar. The distance between the first end and the second end is less than the length of the first current path. The first and second ends are configured to be electrically connected to a power source. The dividing connectors are electrically connected to different locations on the first current path. Each of the dividing connectors has a contact pad. The resistance bar is not coplanar with the contact pads. A divided voltage is obtained from a pair of dividing connectors chosen from the plurality of dividing connectors.

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05-02-2013 дата публикации

Wafer level package of MEMS microphone and manufacturing method thereof

Номер: US0008368153B2

A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

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30-06-2005 дата публикации

Method of determining disc type for disc burners

Номер: US20050141883A1
Принадлежит:

This specification disclosed a method of determining the disc type for a disc burner to determine the type of an unfinalized disc. By checking the special bit data in the first and second tracks, the discs can be classified into different types. This avoids the trouble of manually keeping track of the type of each disc.

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20-05-2008 дата публикации

Method of determining disc type for disc burners

Номер: US0007376342B2

This specification disclosed a method of determining the disc type for a disc burner to determine the type of an unfinalized disc. By checking the special bit data in the first and second tracks, the discs can be classified into different types. This avoids the trouble of manually keeping track of the type of each disc.

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06-08-2013 дата публикации

MEMS and protection structure thereof

Номер: US0008502382B2

A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

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14-11-2013 дата публикации

METHOD FOR FABRICATING MEMS DEVICE WITH PROTECTION RINGS

Номер: US20130302933A1
Принадлежит:

A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The method of the present invention includes the following steps. A substrate is provided, including a circuit region and a MEMS region separated from each other. An interconnection structure is formed on the substrate in the circuit region, and simultaneously a plurality of dielectric layers and a first electrode are formed on the substrate in the MEMS region. The first electrode includes at least two metal layers and a protection ring. The metal layers and the protection ring are formed in the dielectric layers. The protection ring connects two adjacent metal layers, so as to define an enclosed space between the two adjacent metal layers. A second electrode is formed on the first electrode. The dielectric layers outside the enclosed space in the MEMS region are removed to form a cavity between the electrodes. 1. A method for fabricating a MEMS device , comprising:providing a substrate, comprising a circuit region and a MEMS region separated from each other; at least two metal layers, formed in the dielectric layers; and', 'a first protection ring, formed in the dielectric layers and connecting two adjacent metal layers, so as to define an enclosed space between the two adjacent metal layers;, 'forming an interconnection structure on the substrate in the circuit region, and simultaneously forming a plurality of dielectric layers and a first electrode on the substrate in the MEMS region, wherein the first electrode comprisesforming a second electrode on the first electrode; andremoving the dielectric layers outside the enclosed space in the MEMS region.2. The method according to claim 1 , wherein the first protection ring substantially corresponds to a profile of each metal layer.3. The method according to claim 1 , wherein the first protection ring comprises metal.4. The method according to claim 1 , further comprising forming at least one second protection ring in ...

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16-12-2010 дата публикации

METHOD FOR FABRICATING MEMS STRUCTURE

Номер: US20100317138A1
Принадлежит: UNITED MICROELECTRONICS CORP.

A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and an MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form an MEMS device in the MEMS region.

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27-07-2021 дата публикации

Earphones charging case

Номер: US000D926160S1
Автор: Chien-Hsin Huang
Принадлежит: HMD Global Oy

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04-08-2011 дата публикации

METHOD OF FABRICATING A MEMS MICROPHONE

Номер: US20110189804A1
Принадлежит:

A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

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01-11-2011 дата публикации

Key structure

Номер: US0008049125B2
Принадлежит: HTC Corporation, HTC CORP, HTC CORPORATION

A key structure including at least two protruding keys and a key frame is provided. The at least two protruding keys are arrayed adjacently. Each of the at least two protruding keys has a first side edge, a second side edge and a protrusion. The second side edge is opposite to the first side edge. The protrusion has a curved-convex surface, a first side surface and a second side surface. The curved-convex surface is getting protruding inwardly from the first side edge and the second side edge. The top end of the curved-convex surface has a crest line. The first side surface passes through the end points of the first side edge, the second side edge and the crest line in the same side. The second side surface is opposite to the first side surface. The key frame is used for carrying the at least two protruding keys.

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03-05-2016 дата публикации

Mobile device

Номер: US0009331391B2

A mobile device includes a substrate, a ground element, and a radiation branch. The ground element includes a ground branch, wherein an edge of the ground element has a notch extending into an interior of the ground element so as to form a slot region, and the ground branch partially surrounds the slot region. The radiation branch is substantially inside the slot region, and is coupled to the ground branch of the ground element. The ground branch and the radiation branch form an antenna structure.

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26-02-2013 дата публикации

Semiconductor structure, pad structure and protection structure

Номер: US0008384214B2

A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.

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11-10-2007 дата публикации

INTUITIVE IMAGE NAVIGATOR

Номер: US20070236479A1
Принадлежит: HIGH TECH COMPUTER CORP.

An intuitive image navigator is described. The intuitive image navigator comprises a direction control device and a rotational control ring. The image direction control device moves an image shown on a display of an electronic device, for example, an electronic map on a display of a portable electronic device. The rotational control ring is configured around the image direction control device to control the display condition of the image on the display. The image direction control device provides an intuitive omni-directional variable-speed scrolling function and the rotational control ring provides a stepless variable-speed changing function for browsing the image.

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20-02-2018 дата публикации

Portable electronic device

Номер: US000D810726S1
Принадлежит: HTC Corporation

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01-10-2009 дата публикации

Integrated structure for MEMS device and semiconductor device and method of fabricating the same

Номер: US20090243004A1
Принадлежит:

The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping device is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping device has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.

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25-03-2010 дата публикации

STRUCTURE OF MEMS ELECTROACOUSTIC TRANSDUCER AND FABRICATING METHOD THEREOF

Номер: US20100074458A1
Принадлежит: United Microelectronics Corp.

A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.

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21-03-2013 дата публикации

SPEAKER-CONNECTOR MODULE AND HANDHELD ELECTRONIC DEVICE

Номер: US20130070947A1
Принадлежит: HTC CORPORATION

The disclosure provides a speaker-connector module and a handheld electronic device. The handheld electronic device includes a body and a speaker-connector module. The body has an opening. The speaker-connector module is assembled in the body and correspondingly disposed to the opening. The speaker-connector module includes a housing, a speaker and an electrical connector. The housing has a major sound passage, wherein the major sound passage has a major input end and a major output end. The speaker is assembled in the housing and has a sound outlet surface, wherein the major input end is communicated with the sound outlet surface. The electrical connector is disposed in the major sound passage and adjacent to the speaker, and the major input end is connected to the electrical connector. 1. A speaker-connector module adapted to a handheld electronic device , the speaker-connector module comprising:a housing having a major sound passage, wherein the major sound passage has a major input end and a major output end;a speaker assembled in the housing and having a sound outlet surface, wherein the major input end is communicated with the sound outlet surface; andan electrical connector disposed in the major sound passage.2. The speaker-connector module as claimed in claim 1 , wherein the housing further has an upper sound box claim 1 , and the upper sound box is located above the sound outlet surface.3. The speaker-connector module as claimed in claim 2 , wherein the housing comprises:an upper cover having the upper sound box; anda lower cover, wherein the speaker and the electrical connector are disposed between the upper cover and the lower cover.4. The speaker-connector module as claimed in claim 1 , wherein the housing further has an upper sound box and a lower sound box claim 1 , and the speaker is located between the upper sound box and the lower sound box claim 1 , and the upper sound box is located above the sound outlet surface.5. The speaker-connector module as ...

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13-03-2007 дата публикации

Disc burner and its control method

Номер: US0007190654B2

A disc burner and its control method applicable to high speed disc burner, to solve disc burning failure problem due to burning speed exceeding encoding speed. A buffer is inserted to store the encoded data in groups, and these data groups are used in sequence for disc burning purpose. Therefore, the waiting time of the writing laser is spread out and does not exceed the threshold waiting time, and there is no disc burning failure problem.

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05-06-2018 дата публикации

Method of fabricating integrated structure for MEMS device and semiconductor device

Номер: US0009988264B2

A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers; forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in a etch stopping device region; forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region; and performing an etching process to remove the third dielectric layers in the MEMS region.

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05-08-2014 дата публикации

Structure of MEMS electroacoustic transducer and fabricating method thereof

Номер: US0008798291B2

A structure of a micro-electro-mechanical systems (MEMS) electroacoustic transducer includes a substrate, a diaphragm, a silicon material layer, and a conductive pattern. The substrate includes an MEMS device region. The diaphragm has openings, and is disposed in the MEMS device region. A first cavity is formed between the diaphragm and the substrate. The silicon material layer is disposed on the diaphragm and seals the diaphragm. The conductive pattern is disposed beneath the diaphragm in the MEMS device region.

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21-10-2014 дата публикации

Method of fabricating MEMS microphone with trenches serving as vent pattern

Номер: US0008865500B2

A method of fabricating a MEMS microphone includes: first providing a substrate having a first surface and a second surface. The substrate is divided into a logic region and a MEMS region. The first surface of the substrate is etched to form a plurality of first trenches in the MEMS region. An STI material is then formed in the plurality of first trenches. Subsequently, the second surface of the substrate is etched to form a second trench in the MEMS region, wherein the second trench connects with each of the first trenches. Finally, the STI material in the first trenches is removed.

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24-03-2011 дата публикации

INTEGRATED CIRCUIT HAVING MICROELECTROMECHANICAL SYSTEM DEVICE AND METHOD OF FABRICATING THE SAME

Номер: US20110068374A1
Принадлежит: UNITED MICROELECTRONICS CORP.

An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.

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14-04-2011 дата публикации

MEMS DEVICE WITH A COMPOSITE BACK PLATE ELECTRODE AND METHOD OF MAKING THE SAME

Номер: US20110084344A1
Принадлежит:

A method of fabricating MEMS device includes: providing a substrate with a first surface and a second surface. The substrate includes at least one logic region and at least one MEMS region. The logic region includes at least one logic device positioned on the first surface of the substrate. Then, an interlayer material is formed on the first surface of the substrate within the MEMS region. Finally, the second surface of the substrate within the MEMS region is patterned. After the pattern process, a vent pattern is formed in the second surface of the substrate within the MEMS region. The interlayer material does not react with halogen radicals. Therefore, during the formation of the vent pattern, the substrate is protected by the interlayer material and the substrate can be prevented from forming any undercut.

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12-07-2012 дата публикации

SEMICONDUCTOR DEVICE, WAFER STRUCTURE AND FABRICATION METHOD THEREOF

Номер: US20120175778A1
Принадлежит:

A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

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30-10-2012 дата публикации

Semiconductor optoelectronic structure

Номер: US0008299555B2

A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.

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17-02-2011 дата публикации

Semiconductor Photodetector Structure and the Fabrication Method Thereof

Номер: US20110037133A1
Принадлежит:

A semiconductor photodetector structure is provided. The structure includes a substrate, a photodetecting element and a semiconductor layer disposed on the photodetecting element. The substrate includes a first semiconductor material and includes a deep trench. The surface of the deep trench includes a first type dopant. The photodetecting element is disposed in the deep trench. The photodetecting element includes a second semiconductor material. The semiconductor layer includes a second type dopant.

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07-01-2010 дата публикации

MEMS device and method of making the same

Номер: US20100002894A1
Принадлежит:

A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.

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05-06-2012 дата публикации

MEMS and a protection structure thereof

Номер: US0008193640B2

A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.

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01-03-2011 дата публикации

MEMS device and method of making the same

Номер: US0007898081B2

A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.

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03-09-2013 дата публикации

MEMS device with protection rings

Номер: US0008525389B2

A microelectromechanical system (MEMS) device and a method for fabricating the same are described. The MEMS device includes a first electrode and a second electrode. The first electrode is disposed on a substrate, and includes at least two metal layers, a first protection ring and a dielectric layer. The first protection ring connects two adjacent metal layers, so as to define an enclosed space between two adjacent metal layers. The dielectric layer is disposed in the enclosed space and connects two adjacent metal layers. The second electrode is disposed on the first electrode, wherein a cavity is formed between the first electrode and the second electrode.

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02-04-2013 дата публикации

Portable electronic device

Номер: US000D679264S1
Автор: Chien-Hsin Huang
Принадлежит: HTC Corporation

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03-09-2013 дата публикации

Bond pad structure and fabricating method thereof

Номер: US0008525354B2

A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.

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04-02-2014 дата публикации

Integrated circuit having microelectromechanical system device and method of fabricating the same

Номер: US0008642986B2

An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a metal interconnect, and the MEMS device. The substrate has a logic circuit region and a MEMS region. The MOS device is located on the logic circuit region of the substrate. The metal interconnect, formed by a plurality of levels of wires and a plurality of vias, is located above the substrate to connect the MOS device. The MEMS device is located on the MEMS region, and includes a sandwich membrane located between any two neighboring levels of wires in the metal interconnect and connected to the metal interconnect.

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30-06-2011 дата публикации

STRUCTURE OF A SEMICONDUCTOR DEVICE HAVING A WAVEGUIDE AND METHOD OF FORMING THE SAME

Номер: US20110158582A1
Принадлежит: United Microelectronics Corp

A method of forming the structure of the semiconductor device having a waveguide. Firstly, a SOI substrate including a bulk silicon, an insulating layer, and a silicon layer is provided and a device region and a waveguide region are defined on the SOI substrate. Afterwards, a protection layer and a patterned shielding layer are formed to cover the waveguide region and expose the device region. Subsequently, a recess is formed by etching the protection layer, the silicon layer and the insulating layer and thereby the bulk silicon is exposed. After that, an epitaxial silicon layer is formed in the recess and a semiconductor device is subsequently formed on the epitaxial silicon layer. Also, the present invention conquers the poor electrical performance of the semiconductor device integrated into the SOI substrate.

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21-10-2014 дата публикации

Speaker-connector module and handheld electronic device

Номер: US0008867770B2

The disclosure provides a speaker-connector module and a handheld electronic device. The handheld electronic device includes a body and a speaker-connector module. The body has an opening. The speaker-connector module is assembled in the body and correspondingly disposed to the opening. The speaker-connector module includes a housing, a speaker and an electrical connector. The housing has a major sound passage, wherein the major sound passage has a major input end and a major output end. The speaker is assembled in the housing and has a sound outlet surface, wherein the major input end is communicated with the sound outlet surface. The electrical connector is disposed in the major sound passage and adjacent to the speaker, and the major input end is connected to the electrical connector.

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15-08-2013 дата публикации

MOBILE DEVICE

Номер: US20130207855A1
Принадлежит: HTC CORPORATION

A mobile device includes a substrate, a ground element, and a radiation branch. The ground element includes a ground branch, wherein an edge of the ground element has a notch extending into an interior of the ground element so as to form a slot region, and the ground branch partially surrounds the slot region. The radiation branch is substantially inside the slot region, and is coupled to the ground branch of the ground element. The ground branch and the radiation branch form an antenna structure. 1. A mobile device , comprising:a substrate;a ground element, comprising a ground branch, wherein an edge of the ground element has a notch extending into an interior of the ground element to form a slot region, and the ground branch partially surrounds the slot region; anda radiating branch, disposed inside the slot region, and coupled to the ground branch of the ground element,wherein the ground branch and the radiating branch form an antenna structure.2. The mobile device as claimed in claim 1 , wherein the ground element is a conductive housing of the mobile device claim 1 , and the substrate and the radiating branch are disposed in the conductive housing.3. The mobile device as claimed in claim 1 , wherein a length of the slot region is greater than a length of the notch.4. The mobile device as claimed in claim 1 , wherein a length of the notch is smaller than 2 mm.5. The mobile device as claimed in claim 1 , wherein the slot region substantially has a rectangular shape.6. The mobile device as claimed in claim 1 , wherein a length of the radiating branch is greater than a length of the ground branch.7. The mobile device as claimed in claim 1 , wherein the radiating branch substantially has a C-shape.8. The mobile device as claimed in claim 1 , wherein the ground branch of the9. The mobile device as claimed in claim 1 , further comprising:a power button, closed to the ground branch;an FPCB (Flexible Printed Circuit Board); anda signal line, disposed on the FPCB, and ...

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05-03-2020 дата публикации

STORAGE DEVICE AND STORAGE METHOD

Номер: US20200076893A1

Provided is a storage method including the following. An object is stored in a storage space. The object is sensed to generate sensing data. An identification model is generated according to the sensing data. In addition, the identification model is uploaded to a server. 1. A storage device , comprising:a storage space, suitable for storing an object;a sensor, sensing the object to generate sensing data; anda processor, coupled to a transceiver and the sensor, wherein the processor is configured to generate an identification model according to the sensing data;wherein the transceiver is configured to upload the identification model to a server.2. The storage device as claimed in claim 1 , further comprising:a storage medium, coupled to the processor and recording information of the object, wherein:the sensor generates a trigger signal in response to the object being removed from the storage space, andthe processor uploads the information to the server through the transceiver in response to the trigger signal.3. The storage device as claimed in claim 2 , wherein the information corresponds to a user associated with the trigger signal.4. The storage device as claimed in claim 2 , wherein the information comprises at least one of identity information claim 2 , object name claim 2 , and object number.5. The storage device as claimed in claim 1 , wherein the sensor is an image capture device claim 1 , and the sensing data comprises at least one of an image of appearance of the object and location information of the object.6. The storage device as claimed in claim 1 , wherein the sensor is a load cell claim 1 , and the sensing data comprises load data corresponding to the object.7. A storage device claim 1 , comprising:a storage space, suitable for storing an object;a transceiver, downloading an identification model from a server;a sensor, sensing the object to generate sensing data; anda processor, coupled to the transceiver and the sensor, wherein the processor is ...

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23-03-2017 дата публикации

METHOD AND DEVICE FOR ANALYZING DATA

Номер: US20170083583A1

A method and a device for analyzing data are provided. The method includes following steps. A plurality of queries for an event stored in a database are integrated to obtain a plurality of features. Each feature is limited at a searching condition. A plurality of items of searched data are obtained from the database according to respective searching condition of each feature. Whether a data volume of the searched data is higher or lower than a predetermined range is determined. If the data volume is higher than the predetermined range, the data volume of the searched data is reduced according to the features. If the data volume is lower than the predetermined range, the data volume of the searched data is increased according to the features. A correlation between the features and the event is analyzed according to the searched data. 1. A method for analyzing data , comprising:integrating a plurality of queries for an event stored in a database to obtain a plurality of features, wherein each feature is limited at a searching condition, and a plurality of items of searched data are obtained from the database according to respective searching condition of each feature;determining whether a data volume of the searched data is higher or lower than a predetermined range;reducing the data volume of the searched data according to the features if the data volume is higher than the predetermined range;increasing the data volume of the searched data according to the features if the data volume is lower than the predetermined range; andanalyzing a correlation between the features and the event according to the searched data.2. The method according to claim 1 , wherein the step of reducing the data volume of the searched data comprises:eliminating some of the features according to a number of times of each of the features used in the queries.3. The method according to claim 1 , wherein the step of reducing the data volume of the searched data comprises:narrowing some of the ...

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05-05-2022 дата публикации

Intelligent storage device and intelligent storage method

Номер: US20220137256A1

An intelligent storage device and an intelligent storage method are provided. The intelligent storage device includes a storage space, an infrared sensor, a weight sensor, a transceiver, and a processor. The storage space is suitable for storing an object. The infrared sensor senses the storage space to generate infrared sensing data. The weight sensor senses the object in the storage space to generate weight sensing data. The processor is coupled to the infrared sensor, the weight sensor, and the transceiver, determines whether the object is placed in or removed from the storage space according to the infrared sensing data and the weight sensing data to generate an event record, and transmits the event record via the transceiver.

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05-05-2022 дата публикации

Intelligent store system and intelligent store method

Номер: US20220138838A1

An intelligent store system and an intelligent store method are provided. The method includes: sensing, by a proximity sensor, whether there is a first customer approaching the proximity sensor; sensing, by an image sensor, a movement trajectory of the first customer; and determining whether the first customer is entering or leaving a store in response to the first customer approaching the proximity sensor sensed by the proximity sensor. If the first customer is entering the store, a first virtual identity and a first virtual shopping cart corresponding to the first virtual identity are generated for the first customer, and a first product list of the first virtual shopping cart is updated according to the movement trajectory. If the first customer is leaving the store, a first operation of the first customer is received by a human machine interface, and the first product list according to the first operation is updated.

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31-05-2018 дата публикации

DATA ANALYSIS METHOD, SYSTEM AND NON-TRANSITORY COMPUTER READABLE MEDIUM

Номер: US20180150754A1
Принадлежит:

A data analysis method is provided. The data analysis method includes collecting a user data; generating a number of situation conditions from the user data; calculating a distribution ratio of each of the situation conditions to obtain a first data; calculating a success ratio of information association of an information association algorithm under each of the situation conditions to obtain a second data; obtaining at least one evaluating parameter of the information association algorithm under the situation conditions according to the first data and the second data; and generating a suggestion information relating to the information association algorithm according to the at least one evaluating parameter. 1. A data analysis method , comprising:collecting a user data;generating a plurality of situation conditions from the user data;calculating a distribution ratio of each of the situation conditions to obtain a first data;calculating a success ratio of information association of an information association algorithm under each of the situation conditions to obtain a second data;obtaining at least one evaluating parameter of the information association algorithm under the situation conditions according to the first data and the second data; andgenerating a suggestion information relating to the information association algorithm according to the at least one evaluating parameter.2. The data analysis method according to claim 1 , wherein the user data comprises a plurality of data factors claim 1 , the method further comprises:obtaining each of the situation conditions by combining the data factors based on a machine learning algorithm.3. The data analysis method according to claim 2 , wherein the machine learning algorithm is a deep neuron network (DNN) algorithm.4. The data analysis method according to claim 1 , further comprising:obtaining at least one evaluating parameter by calculating a confidence interval of odds ratio of the information association algorithm ...

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17-06-2021 дата публикации

Intelligent planogram producing system and method thereof

Номер: US20210182774A1

An intelligent planogram producing system and a method thereof are provided. The intelligent planogram producing method includes the following steps: obtaining a relevance between each of a plurality of objects and producing a relevance array; re-weighting the relevance array according to the displacing limitation of each object and producing at least one complete graph; obtaining a representing route of the at least one complete graph; outputting a planogram of the disposing location of each object on a shelf according to the representing route.

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29-09-2022 дата публикации

Cancer treatment by in vitro amino acid deprivation

Номер: US20220305178A1
Принадлежит: Yuanheng Biomedical Co Ltd

Provided is a method for cancer treatment in a patient comprising extracorporeal dialysis of blood, plasma or peritoneal fluid of the patient with a dialysis system for removing a target amino acid, and the dialysis system comprising: a dialysis machine, a dialyzer having a dialysis membrane, and a dialysate; wherein the dialyzer is connected to the dialysis machine and the dialysate flows within the dialysis machine and the dialyzer; and an enzyme for degrading the target amino acid is provided to the dialysis membrane and/or the dialysate, and the target amino acid includes asparagine, glutamine, arginine, serine, methionine or any combination thereof. By modifying dialysis to achieve in vitro amino acid deprivation and incorporating personalized diagnosis, the present invention not only provides a novel precision medicine with better anticancer efficacy and less side effects, but also requires less time and cost for development.

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28-05-2020 дата публикации

RESISTOR

Номер: US20200168371A1
Принадлежит:

Herein disclosed is a resistor comprising a resistance bar and a plurality of dividing connectors. The resistance bar has a first end and a second end and provides a first current path, which stretches from the first end to the second end along the resistance bar. The distance between the first end and the second end is less than the length of the first current path. The first and second ends are configured to be electrically connected to a power source. The dividing connectors are electrically connected to different locations on the first current path. Each of the dividing connectors has a contact pad. The resistance bar is not coplanar with the contact pads. A divided voltage is obtained from a pair of dividing connectors chosen from the plurality of dividing connectors. 1. A resistor comprising:a resistance bar having a first end and a second end and providing a first current path, the first end and the second end configured to be electrically connected to a power source; anda plurality of dividing connectors electrically connected to different locations on the first current path;wherein the first current path stretches from the first end to the second end along the resistance bar, and the distance between the first end and the second end is less than the length of the first current path;wherein each of the dividing connectors has a contact pad, the resistance bar not being coplanar with the contact pads of the dividing connectors;wherein a pair of dividing connectors is chosen from the plurality of dividing connectors, and a divided voltage is obtained from the chosen pair of dividing connectors.2. The resistor according to claim 1 , further comprising:a first power connector connected to the first end; anda second power connector connected to the second end;wherein the power source is electrically connected to the first end and the second end through the first power connector and the second power connector, respectively.3. The resistor according to claim 1 , ...

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02-10-2014 дата публикации

STRUCTURE OF MEMS ELECTROACOUSTIC TRANSDUCER

Номер: US20140291787A1
Принадлежит:

A structure of micro-electro-mechanical systems (MEMS) electroacoustic transducer is disclosed. The MEMS electroacoustic transducer includes a substrate having a MEMS device region, a diaphragm having openings and disposed in the MEMS device region, a silicon material layer disposed on the diaphragm and sealing the diaphragm, and a conductive pattern disposed beneath the diaphragm in the MEMS device region. Preferably, a first cavity is also formed between the diaphragm and the substrate. 1. A structure of micro-electro-mechanical systems (MEMS) electroacoustic transducer , comprising:a substrate, comprising an MEMS device region;a diaphragm, having openings and disposed on the MEMS device region, wherein a first cavity is formed between the diaphragm and the substrate;a silicon material layer, disposed on the diaphragm and sealing the diaphragm; anda conductive pattern, disposed beneath the diaphragm and on the MEMS device region.2. The structure of MEMS electroacoustic transducer according to claim 1 , wherein a material of the diaphragm comprises a metal material.3. The structure of MEMS electroacoustic transducer according to claim 1 , wherein the diaphragm is in a shape of net.4. The structure of MEMS electroacoustic transducer according to claim 1 , wherein a material of the silicon material layer is amorphous silicon or polysilicon.5. The structure of MEMS electroacoustic transducer according to claim 1 , further comprising a vent hole disposed in the substrate in the MEMS device region.6. The structure of MEMS electroacoustic transducer according to claim 1 , further comprising a vent hole region being in communication with the MEMS device region.7. The structure of MEMS electroacoustic transducer according to claim 6 , further comprising a vent hole layer having a vent hole and disposed in the vent hole region claim 6 , wherein a second cavity is formed between the vent hole layer and the substrate claim 6 , and the second cavity is in communication with ...

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21-08-2013 дата публикации

Mobile device

Номер: EP2629368A1
Принадлежит: HTC Corp

A mobile device includes a substrate, a ground element, and a radiation branch. The ground element includes a ground branch, wherein an edge of the ground element has a notch extending into an interior of the ground element so as to form a slot region, and the ground branch partially surrounds the slot region. The radiation branch is substantially inside the slot region, and is coupled to the ground branch of the ground element. The ground branch and the radiation branch form an antenna structure.

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24-11-2005 дата публикации

Method for fabrication of wafer level package incorporating dual compliant layers

Номер: US20050260794A1

A method is provided for forming wafer level package that incorporates dual compliant layers and a metal cap layer on top of I/O pads. The wafer level package includes a plurality of metal cap layers formed on top of a plurality of I/O pads to function as stress buffering and avoiding sharp corners in metal traces formed on top of the metal cap layers. A first compliant layer and a second compliant layer are formed under the metal trace to provide the necessary standoff and to accommodate differences in coefficients of thermal expansion of the various materials on an IC die. The wafer level package is particularly suitable for copper devices or in devices wherein copper lines are used.

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21-01-2010 дата публикации

Electronic device and keyboard module thereof

Номер: US20100014235A1
Принадлежит: HTC Corp

An electronic device is provided, and includes a keyboard module and a display module. The keyboard module includes a first key area, a second key area, and a joining area disposed between the first key area and the second key area. The display module has a connecting surface detachably disposed on the joining area and electrical connected to the keyboard module. The display module is stood on the keyboard module to face a first direction in a first operation mode and a second direction is opposite to the first direction in a second operation mode.

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20-04-2021 дата публикации

Storage device and storage method to identify object using sensing data and identification model

Номер: US10984376B2

Provided is a storage method including the following. An object is stored in a storage space. The object is sensed to generate sensing data. An identification model is generated according to the sensing data. In addition, the identification model is uploaded to a server.

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21-01-2001 дата публикации

Method of wafer level package and structure thereof

Номер: TW419712B
Принадлежит: Ind Tech Res Inst

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01-12-2015 дата публикации

可攜式電子裝置之部分

Номер: TWD172231S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分為本案不主張設計之部分。

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06-10-2011 дата публикации

Integrated Circuit and Fabricating Method thereof

Номер: US20110241137A1
Принадлежит: United Microelectronics Corp

A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.

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01-06-2023 дата публикации

Assortment planning method, assortment planning system and processing apparatus thereof for smart store

Номер: US20230169567A1

An assortment planning method, an assortment planning system and a processing apparatus thereof for a smart store are provided. The assortment planning system includes at least one tracking apparatus, a plurality of detecting apparatuses, and a processing apparatus. The tracking apparatus is used to identify a plurality of consumer tracks. The detecting apparatuses are used to detect a plurality of consumer interactive behaviors of a plurality of products. The processing apparatus includes a binding device, an intention analyzing device and an estimating device. The binding device is used to bind the consumer interactive behaviors with the consumer tracks to obtain a number of interactive behavior time sequence records. The intention analyzing device is used to obtain a plurality of consumption intentions for the products according to the interactive behavior time sequence records. The estimating device is used to estimate a best product combination according to the consumption intentions.

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01-06-2016 дата публикации

可攜式電子裝置之部分

Номер: TWD176097S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分,包括位於可攜式電子裝置正面螢幕上方的圓形圖案、位於可攜式電子裝置頂面、底面、側面的按鍵及連接孔、以及位於可攜式電子裝置背面下方的兩排圓形孔洞皆為本案不主張設計之部分。

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01-05-2001 дата публикации

Method and structure of semiconductor package

Номер: TW432555B
Принадлежит: Ind Tech Res Inst

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21-07-2000 дата публикации

Flip-chip ball grid array package with a heat slug

Номер: TW399310B
Принадлежит: Day Chiang Han

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21-08-2014 дата публикации

可攜式電子裝置

Номер: TWD162569S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;無。

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01-02-2015 дата публикации

可攜式電子裝置之部分

Номер: TWD165749S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分,為本案不主張設計之部分。

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21-08-2014 дата публикации

可攜式電子裝置之部分

Номер: TWD162567S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分,為本案不主張設計之部分。

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18-03-2009 дата публикации

Tactile surface for orientation on the mobile communication device

Номер: EP1981251A3
Принадлежит: High Tech Computer Corp

Electronic devices (100) with sensible orientation structures are disclosed. The electronic devices (100) can include a faceplate (104) having a faceplate surface (128) and a display (106) at or near the faceplate surface (128) for providing content to a user. The electronic devices (100) can also include an input device (109) proximate to the display for accepting input from the user. The electronic devices (100) can further include a sensible orientation structure (102) carried by the faceplate (104) and at a fixed relative position relative to the input device (109). The sensible orientation structure (102) is configured to provide the user with positional feedback relative to the input device (109) via touching.

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01-05-2015 дата публикации

可攜式電子裝置之部分

Номер: TWD167530S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分,為本案不主張設計之部分。

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01-07-2005 дата публикации

CD burner disk format determining method

Номер: TW200522030A
Принадлежит: Ind Tech Res Inst

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01-09-2015 дата публикации

可攜式電子裝置之部分

Номер: TWD170175S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分,包括位在可攜式電子裝置正面螢幕右上方的圓形圖案、可攜式電子裝置頂/底面的孔洞、以及可攜式電子裝置背面鏡頭下方處的圓形圖案皆為本案不主張設計之部分。

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01-08-2015 дата публикации

可攜式電子裝置之部分

Номер: TWD169483S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之所有虛線部分,包含位於電子裝置正面螢幕上、下兩側的出音孔、前鏡頭、電子裝置側面的按鍵、連接孔、以及位於電子裝置背面鏡頭下方的圓形圖案等皆為本案不主張設計之部分。

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01-06-2015 дата публикации

可攜式電子裝置之部分

Номер: TWD168147S

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分,包含可攜式電子裝置正面顯示幕上方的揚聲孔、側邊框體上的按鍵/孔洞、以及背面的鏡頭,皆為本案不主張設計之部分。

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04-06-2020 дата публикации

抵抗器

Номер: JP2020088395A
Принадлежит: Chroma ATE Inc

【課題】 抵抗器を提供する。【解決手段】 本明細書において開示されるのは、抵抗棒と複数の分割コネクタとを含む抵抗器である。抵抗棒は第1端と第2端とを有するとともに第1電流路を提供し、第1電流路は抵抗棒に沿って第1端から第2端へ伸びる。第1端と第2端との間の距離は第1電流路の長さ未満である。第1及び第2端は電源に電気的に接続されるように構成される。分割コネクタは、第1電流路の異なる位置に電気的に接続される。分割コネクタの各々はコンタクトパッドを有する。抵抗棒はコンタクトパッドと同一平面上にない。分圧電圧は、複数の分割コネクタから選択された分割コネクタの対から得られる。【選択図】図1

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30-10-2008 дата публикации

知覚可能な位置確認構造を有する電子装置及び関連付けられる方法

Номер: JP2008262532A
Принадлежит: HTC Corp, KOTATSU KOKUSAI DENSHI KOFUN Y

【課題】 知覚可能な位置確認構造を有する電子装置を提供する。 【解決手段】 電子装置は、フェースプレート面を有するフェースプレートと、ユーザにコンテンツを供給するフェースプレート面における又は付近のディスプレイを含むことが可能である。電子装置はさらに、ユーザからの入力を受け取るディスプレイに近接する入力装置を含むことが可能である。電子装置はさらに、フェースプレートにより担持され、入力装置に対し固定相対位置に位置付けられる知覚可能な位置確認構造を含む。知覚可能な位置確認構造は、接触を介して入力装置に対する位置フィードバックをユーザに供給するよう構成される。 【選択図】なし

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16-10-2007 дата публикации

Intuitive image navigator

Номер: TW200739395A
Принадлежит: High Tech Comp Corp

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01-11-2013 дата публикации

滑鼠

Номер: TWI413917B
Принадлежит: Kinpo Elect Inc

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21-05-2009 дата публикации

Electronic device with a power generator

Номер: TWM357656U
Принадлежит: Kinpo Elect Inc

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11-05-2016 дата публикации

可攜式電子裝置之部分

Номер: TWD175529S
Принадлежит: 宏達國際電子股份有限公司

【物品用途】;本設計物品,係可用以提供通訊或多媒體播放功能之可攜式電子裝置。;【設計說明】;圖式所揭露之虛線部分,包括位於可攜式電子裝置側面/頂面/底面的按鍵或連接孔,以及位於可攜式電子裝置正面和背面以虛線繪示的圓形圖案等皆為本案不主張設計之部分。

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01-07-2009 дата публикации

Key structure

Номер: TW200929295A
Принадлежит: High Tech Comp Corp

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01-10-2010 дата публикации

Mouse

Номер: TW201035814A
Принадлежит: Kinpo Elect Inc

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01-02-2013 дата публикации

積體電路的製造方法

Номер: TW201306230A
Принадлежит: United Microelectronics Corp

一種積體電路的製造方法,其係先在導電基底的微機電系統區上方形成第一內連線結構,其中第一內連線結構包括依序交替堆疊在微機電系統區上方的多層第一介電層與多個第一導電圖案。再來,在第一內連線結構上形成一層中介層以覆蓋這些第一導電圖案。然後,在中介層上形成一層多晶矽罩幕層,以對應至這些第一導電圖案而暴露出部分之中介層。接續,以多晶矽罩幕層為遮罩,移除多晶矽罩幕層所暴露出之部分中介層以及對應之部分第一介電層,而在第一內連線結構中形成多個開口。之後,移除微機電系統區的部分導電基底。

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11-10-2012 дата публикации

行動電話

Номер: TWD149651S
Автор: Chien Hsin Huang
Принадлежит: 宏達國際電子股份有限公司

【物品用途】;本創作係關於一種行動電話,用以進行無線通訊。;【創作特點】;請配合參閱各視圖所示,本創作之外觀特點主要在於行動電話正面配置有一矩形顯示螢幕,顯示螢幕周圍則形成有一邊框,其中邊框大致覆蓋行動電話之頂部(如俯視圖所示)。需特別說明的是,前述邊框係由行動電話之頂部朝下方漸縮(如左、右側視圖所示),且邊框於漸縮後係順著行動電話側邊並以直線方式朝下方延伸,本創作藉由前述特殊之邊框造型可呈現出簡單而不失典雅的獨特風格,同時亦散發出自然穩重的視覺美感。;整體觀之,本創作藉由方正之顯示螢幕配合具有圓潤造型之邊框,兩者間巧妙的配置可充分地展現出美學與科技的極致融合,使得本創作不僅造型優雅,且能饒富現代感而不顯單調,此獨特創意與具有深度之視覺感受實為同類型手持電子裝置之中所罕見者,誠為符合新式樣專利要件的創新設計。

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01-07-2005 дата публикации

Compact disc burner and control method thereof

Номер: TW200521969A
Принадлежит: Ind Tech Res Inst

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21-11-2011 дата публикации

Mems device and method of making the same

Номер: TWI352685B
Принадлежит: United Microelectronics Corp

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16-01-2010 дата публикации

MEMS device and method of making the same

Номер: TW201002605A
Принадлежит: United Microelectronics Corp

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