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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 4. Отображено 4.
30-04-2020 дата публикации

Overvoltage Protection Device

Номер: US20200135367A1
Автор: Chin ChuanFang, Du Yaosheng, To Teddy C.T.
Принадлежит: Littelfuse Semiconductor (Wuxi) Co., Ltd.

In one embodiment, an overvoltage protection device may include a metal oxide varistor (MOV) having a first surface and a second surface; a semiconductor substrate having a first outer surface and a second outer surface and comprising a semiconductor crowbar device comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate being disposed on a first side of the metal oxide varistor; a conductive region disposed between the second surface of the MOV and the first outer surface of the semiconductor substrate; a first electrical contact disposed on the first surface of the MOV; and a second electrical contact disposed on the second outer surface of the semiconductor substrate. 1. An overvoltage protection device , comprising:a metal oxide varistor (MOV) having a first surface and a second surface;a semiconductor substrate having a first outer surface and a second outer surface and comprising a semiconductor crowbar device comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate being disposed on a first side of the metal oxide varistor;a conductive region disposed between the second surface of the MOV and the first outer surface of the semiconductor substrate;a first electrical contact disposed on the first surface of the MOV; anda second electrical contact disposed on the second outer surface of the semiconductor substrate.2. The overvoltage protection device of claim 1 , wherein the metal oxide varistor and the semiconductor crowbar device are in electrical series between the first electrical contact and the second electrical contact.3. The overvoltage protection device of claim 1 , wherein the metal oxide varistor comprises a first standoff voltage claim 1 , the semiconductor crowbar device comprises a second standoff voltage claim 1 , and the overvoltage protection device comprises a total standoff voltage equal to a sum of the first standoff ...

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Номер записи: 1
23-08-2018 дата публикации

Overvoltage Protection Device

Номер: US20180240575A1
Автор: Chin ChuanFang, Du Yaosheng, To Teddy C. T.
Принадлежит: Littelfuse Semiconductor (Wuxi) Co., Ltd

An overvoltage protection device () may include a metal oxide varistor (MOV) () having a first surface () and a second surface (); a semiconductor substrate () having a first outer surface () and a second outer surface () and comprising a semiconductor crowbar device () comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate () being disposed on a first side of the metal oxide varistor (), a conductive region () disposed between the second surface () of the MOV () and the first outer surface () of the semiconductor substrate (); a first electrical contact () disposed on the first surface () of the MOV (); and a second electrical contact () disposed on the second outer surface () of the semiconductor substrate (). 1. An overvoltage protection device , comprising:a metal oxide varistor (MOV) having a first surface and a second surface;a semiconductor substrate having a first outer surface and a second outer surface and comprising a semiconductor crowbar device comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate being disposed on a first side of the metal oxide varistor;a conductive region disposed between the second surface of the MOV and the first outer surface of the semiconductor substrate;a first electrical contact disposed on the first surface of the MOV; anda second electrical contact disposed on the second outer surface of the semiconductor substrate.2. The overvoltage protection device of claim 1 , wherein the metal oxide varistor and the semiconductor crowbar device are in electrical series between the first electrical contact and the second electrical contact.3. The overvoltage protection device of claim 1 , wherein the metal oxide varistor comprises a first standoff voltage claim 1 , the semiconductor crowbar device comprises a second standoff voltage claim 1 , and the overvoltage protection device comprises a total standoff ...

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Номер записи: 2
08-10-2020 дата публикации

Transient Voltage Suppression Device with Thermal Cutoff

Номер: US20200321327A1
Автор: Chin ChuanFang, LU Kueir-Liang, MOU Tsungwen, Shi Lei
Принадлежит:

A transient voltage suppression (TVS) device including a TVS diode having a first electrode and a second electrode, an insulating plate disposed on the first electrode, a first terminal lead connected to the insulating plate, a second terminal lead connected to the second electrode, and an thermal cutoff element connecting the first terminal lead to the first electrode, the thermal cutoff element configured to melt and break an electrical connection between the first terminal lead and the first electrode when a temperature of the TVS diode exceeds a predetermined safety temperature. 1. A transient voltage suppression (TVS) device comprising:a TVS diode having a first electrode and a second electrode;an insulating plate disposed on the first electrode;a first terminal lead connected to the insulating plate;a second terminal lead connected to the second electrode; anda thermal cutoff element connecting the first terminal lead to the first electrode, the thermal cutoff element configured to melt and break an electrical connection between the first terminal lead and the first electrode when a temperature of the TVS diode exceeds a predetermined safety temperature.2. The TVS device of claim 1 , wherein the TVS diode comprises a stack of silicon dies.3. The TVS device of claim 1 , wherein the thermal cutoff element comprises a fuse element that is configured to separate when the fuse element is subjected to a current exceeding a current rating of the fuse element.4. The TVS device of claim 3 , wherein the thermal cutoff element further comprises low temperature joints bonding ends of the fuse element to the first terminal lead and the first electrode.5. The TVS device of claim 1 , further comprising a quantity of non-conductive adhesive material covering the thermal cutoff element.6. The TVS device of claim 5 , wherein the non-conductive adhesive material is hot melt.7. The TVS device of claim 5 , further comprising an electrically insulating outer coating encapsulating ...

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Номер записи: 3
14-07-2020 дата публикации

Overvoltage protection device

Номер: US10714240B2
Автор: Chuanfang Chin, Teddy C. T. To, Yaosheng Du
Принадлежит: Littlefuse Semiconductor (wuxi) Co Ltd

An overvoltage protection device ( 100 ) may include a metal oxide varistor (MOV) ( 102 ) having a first surface ( 114 ) and a second surface ( 116 ); a semiconductor substrate ( 202 ) having a first outer surface ( 126 ) and a second outer surface ( 128 ) and comprising a semiconductor crowbar device ( 104 ) comprising a plurality of semiconductor layers arranged in electrical series to one another, the semiconductor substrate ( 202 ) being disposed on a first side of the metal oxide varistor ( 102 ), a conductive region ( 124 ) disposed between the second surface ( 116 ) of the MOV ( 102 ) and the first outer surface ( 126 ) of the semiconductor substrate ( 202 ); a first electrical contact ( 120 ) disposed on the first surface ( 114 ) of the MOV ( 102 ); and a second electrical contact ( 122 ) disposed on the second outer surface ( 128 ) of the semiconductor substrate ( 202 ).

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Номер записи: 4