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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 15. Отображено 15.
11-10-2016 дата публикации

CMOS gas sensor and method for manufacturing the same

Номер: US0009466498B2
Автор: Johannes Buhler, Cyrill Kuemin, BUHLER JOHANNES, KUEMIN CYRILL, Buhler Johannes, Kuemin Cyrill
Принадлежит: Sensirion AG, SENSIRION AG

A CMOS gas sensor comprises a membrane ( 13 ) extending over an opening ( 12 ) of a silicon substrate ( 1 ). A patch ( 2 ) of sensing material is arranged on the membrane ( 13 ) and in contact with electrodes ( 3 ) of platinum. A heater ( 5 ) of tungsten is located in or on the membrane ( 13 ) at the location of the patch ( 2 ) of metal-oxide sensing material. Combining platinum electrodes ( 3 ) with a tungsten heater ( 5 ) on top of a CMOS structure provides a gas sensor of high reliability and stability.

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Номер записи: 1
27-12-2012 дата публикации

ACCURATE DEPOSITION OF NANO-OBJECTS ON A SURFACE

Номер: US20120328773A1
Автор: Urs T. Duerig, Felix Holzner, Cyrill Kuemin, Armin W. Knoll, Philip Paul, Heiko Wolf, DUERIG URS T, HOLZNER FELIX, KUEMIN CYRILL, KNOLL ARMIN W, PAUL PHILIP, WOLF HEIKO, DUERIG URS T., KNOLL ARMIN W.
Принадлежит: International Business Machines Corporation

The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate. The invention also provides a semiconductor device which includes a substrate and nano-objects accurately disposed on the substrate

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Номер записи: 2
18-10-2012 дата публикации

BRIDGING ARRANGEMENT AND METHOD FOR MANUFACTURING A BRIDGING ARRANGEMENT

Номер: US20120261819A1
Автор: Thomas J. Brunschwiler, Javier V. Goicochea, Cyrill Kuemin, Walter H. Riess, Heiko Wolf, BRUNSCHWILER THOMAS J, GOICOCHEA JAVIER V, KUEMIN CYRILL, RIESS WALTER H, WOLF HEIKO, BRUNSCHWILER THOMAS J., GOICOCHEA JAVIER V., RIESS WALTER H.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.

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Номер записи: 3
29-12-2015 дата публикации

Membrane-based sensor device with non-dielectric etch-stop layer around substrate recess

Номер: US0009224658B2
Автор: Robert Sunier, Cyrill Kuemin, Rene Hummel, SUNIER ROBERT, KUEMIN CYRILL, HUMMEL RENE
Принадлежит: Sensirion AG, SENSIRION AG

A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below.

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Номер записи: 4
12-06-2018 дата публикации

Heater structure for a sensor device

Номер: US0009995700B2
Автор: Cyrill Kuemin, Lukas Buergi, Nicolas Moeller, KUEMIN CYRILL, BUERGI LUKAS, MOELLER NICOLAS, Kuemin, Cyrill, Buergi, Lukas, Moeller, Nicolas
Принадлежит: Sensirion AG, SENSIRION AG

The sensor device comprises a hotplate on a membrane. The hotplate is heated by a N-fold rotationally symmetric heater structure having N>1 heater elements of identical design. Each heater element comprises an inner section, an intermediate section and an outer section arranged in series, with the inner section having a larger electrical cross section than the outer section. This design allows to heat the hotplate to a homogeneous temperature at moderate supply voltages.

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Номер записи: 5
04-06-2015 дата публикации

BRIDGING ARRANGEMENT AND METHOD FOR MANUFACTURING A BRIDGING ARRANGEMENT

Номер: US20150155186A1
Автор: Thomas J. Brunschwiler, Javier V. Goicochea, Cyrill Kuemin, Walter H. Riess, Heiko Wolf, BRUNSCHWILER THOMAS J, GOICOCHEA JAVIER V, KUEMIN CYRILL, RIESS WALTER H, WOLF HEIKO, BRUNSCHWILER THOMAS J., GOICOCHEA JAVIER V., RIESS WALTER H.
Принадлежит:

A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type. 1. A method for manufacturing a bridging arrangement between a first terminal and a second terminal , the method comprising:placing a surface of the first terminal close to a surface of the second terminal for generating a contact region;applying a suspension comprising a carrier fluid and a plurality of particles in the contact region between the first and the second terminal; andremoving the carrier fluid such that the plurality of particles arrange in a vicinity of the contact region between the first terminal and the second terminal, wherein at least a portion of the plurality of particles is attached to the surface of the first terminal and to the surface of the second terminal.2. The method of claim 1 , wherein removing comprises one of drying or evaporating the carrier fluid at least partially.3. The method of claim 1 , wherein the carrier fluid is removed such that capillary forces of the carrier fluid arrange suspended particles in the vicinity of the contact region.4. The method of claim 1 , wherein the carrier fluid has a viscosity such that the suspended particles do not sediment.5. The method of claim 1 , wherein the suspension is a colloid suspension.6. A method for manufacturing a bridging arrangement between a first terminal and a second terminal claim 1 , the method comprising:providing at least one path of particles of a first type between the first ...

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Номер записи: 6
05-01-2016 дата публикации

Bridging arrangement and method for manufacturing a bridging arrangement

Номер: US0009230830B2
Автор: Thomas J. Brunschwiler, Javier V. Goicochea, Cyrill Kuemin, Walter H. Riess, Heiko Wolf, BRUNSCHWILER THOMAS J, GOICOCHEA JAVIER V, KUEMIN CYRILL, RIESS WALTER H, WOLF HEIKO, BRUNSCHWILER THOMAS J., GOICOCHEA JAVIER V., RIESS WALTER H.
Принадлежит: International Business Machines Corporation, IBM, INTERNATIONAL BUSINESS MACHINES CORPORATION

A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.

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Номер записи: 7
10-01-2013 дата публикации

ACCURATE DEPOSITION OF NANO-OBJECTS ON A SURFACE

Номер: US20130009287A1
Автор: Urs T. Duerig, Felix Holzner, Cyrill Kuemin, Armin W. Knoll, Philip Paul, Heiko Wolf, DUERIG URS T, HOLZNER FELIX, KUEMIN CYRILL, KNOLL ARMIN W, PAUL PHILIP, WOLF HEIKO, DUERIG URS T., KNOLL ARMIN W.
Принадлежит: International Business Machines Corporation

The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate. The invention also provides a semiconductor device which includes a substrate and nano-objects accurately disposed on the substrate. 1a substrate; andnano-object disposed on said substrate;wherein the average main dimension of the nano-objects is between 10 nm and 100 nm and ranges therebetween;wherein at least a substantial portion of the nano-objects are nano-rods; andwherein the substrate is a Si wafer covered with amorphous Carbon layer which is covered with SiO2.. semiconductor device comprising: This application is a continuation of and claims priority from U.S. patent application Ser. No. 13/456,596, filed Apr. 26, 2012, which in turn claims priority under 35 U.S.C. §119 from European Patent Application No. 11164336.7 filed Apr. 29, 2011, the entire contents of which are incorporated herein by reference.1. Field of the InventionThe invention relates to the field of controlled positioning of particles of nanoscale size, i.e., nano-objects, on surfaces.2. Description of Related ArtDirected and precise positioning of nanoparticles is a well known problem. Typically the particles are randomly dispersed in a solution and immobilized on a template surface providing specific interactions with the particles (e.g. electrostatic and dielectric forces, steric and surface chemical ...

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Номер записи: 8
02-09-2014 дата публикации

Accurate deposition of nano-objects on a surface

Номер: US0008821965B2
Автор: Urs T. Duerig, Felix Holzner, Cyrill Kuemin, Armin W. Knoll, Philip Paul, Heiko Wolf
Принадлежит: International Business Machines Corporation

The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate. The invention also provides a semiconductor device which includes a substrate and nano-objects accurately disposed on the substrate ...

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Номер записи: 9
26-11-2013 дата публикации

Accurate deposition of nano-objects on a surface

Номер: US0008592955B2
Автор: Urs T Duerig, Felix Holzner, Cyrill Kuemin, Armin W. Knoll, Philip Paul, Heiko Wolf, DUERIG URS T, HOLZNER FELIX, KUEMIN CYRILL, KNOLL ARMIN W, PAUL PHILIP, WOLF HEIKO, KNOLL ARMIN W.
Принадлежит: International Business Machines Corporation, DUERIG URS T, HOLZNER FELIX, KUEMIN CYRILL, KNOLL ARMIN W, PAUL PHILIP, WOLF HEIKO, IBM, KNOLL ARMIN W., INTERNATIONAL BUSINESS MACHINES CORPORATION

The invention notably concerns a method for depositing nano-objects on a surface. The method includes: providing a substrate with surface patterns on one face thereof; providing a transfer layer on said face of the substrate; functionalizing areas on a surface of the transfer layer parallel to said face of the substrate, at locations defined with respect to said surface patterns, such as to exhibit enhanced binding interactions with nano-objects; depositing nano-objects and letting them get captured at the functionalized areas; and thinning down the transfer layer by energetic stimulation to decompose the polymer into evaporating units, until the nano-objects reach the surface of the substrate. The invention also provides a semiconductor device which includes a substrate and nano-objects accurately disposed on the substrate.

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Номер записи: 10
14-01-2016 дата публикации

Heater structure for a sensor device

Номер: US20160011134A1
Автор: Cyrill Kuemin, Lukas BUERGI, Nicolas Moeller
Принадлежит: SENSIRION AG

The sensor device comprises a hotplate on a membrane. The hotplate is heated by a N-fold rotationally symmetric heater structure having N>1 heater elements of identical design. Each heater element comprises an inner section, an intermediate section and an outer section arranged in series, with the inner section having a larger electrical cross section than the outer section. This design allows to heat the hotplate to a homogeneous temperature at moderate supply voltages.

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Номер записи: 11
31-07-2014 дата публикации

CMOS GAS SENSOR AND METHOD FOR MANUFACTURING THE SAME

Номер: US20140208830A1
Автор: BUHLER Johannes, Kuemin Cyrill
Принадлежит:

A CMOS gas sensor comprises a membrane () extending over an opening () of a silicon substrate (). A patch () of sensing material is arranged on the membrane () and in contact with electrodes () of platinum. A heater () of tungsten is located in or on the membrane () at the location of the patch () of metal-oxide sensing material. Combining platinum electrodes () with a tungsten heater () on top of a CMOS structure provides a gas sensor of high reliability and stability. 1. A gas sensor comprisinga silicon substrate,CMOS circuitry integrated on said silicon substrate,an opening extending through said substrate,a membrane extending over said opening,a patch of sensing material arranged on said membrane,electrodes arranged on said membrane in electrical contact with said patch of sensing material,a tungsten heater arranged in or on said membrane at a location of said patch,characterized in that said electrodes are of platinum.2. The gas sensor of further comprising a platinum temperature sensor arranged on said membrane.3. The gas sensor of further comprising at least one heat spreading structure of platinum or tungsten claim 1 , in addition to said electrodes and said heater claim 1 , arranged at the location of said patch claim 1 , and in particular wherein said heat spreading structure does not extend over an edge of said membrane.4. The gas sensor of wherein said CMOS circuitry comprises a plurality of metal layers claim 1 , wherein said tungsten heater and said electrodes are arranged at a level higher than metal layers.5. The gas sensor of further comprising at least one via extending from said electrodes to said CMOS circuitry claim 1 , wherein said via is formed in a lower section of tungsten and in an upper section of platinum.6. The gas sensor of wherein said electrodes have a thickness of less than 200 nm claim 1 , in particular of less than 100 nm.7. The gas sensor of wherein said tungsten heater has a thickness of at least 150 nm.8. A method for ...

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Номер записи: 12
31-07-2014 дата публикации

MEMBRANE-BASED SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20140210036A1
Автор: Hummel Réne, Kuemin Cyrill, SUNIER Robert
Принадлежит:

A sensing device has a semiconductor substrate with an opening and a membrane spanning the opening. A heater is arranged on the membrane. To reduce the thermal conductivity of the membrane, a recess is etched into the membrane from below. 1. A sensor device comprisinga substrate having a top and a bottom surface and an opening extending between said top and bottom surfaces,a batch of material layers applied to said top surface, wherein at least some of said material layers extend over said opening for forming a membrane,a heater arranged on said membrane,wherein said sensor device comprises a recess extending from below into said batch of material layers at a location of said membrane.2. The sensor device of wherein said recess has a depth of at least 1 μm claim 1 , in particular of at least 3 μm.3. The sensor device of wherein said recess has a cross section area of at least 80% of a cross section area of an upper end of said opening claim 1 , and in particular wherein said recess has a cross section equal to the cross section of the upper end of said opening.4. The sensor device of wherein said batch of material layers comprises a plurality of structured dielectric layers and a plurality of structured metal layers.5. The sensor device of further comprising at least one non-dielectric etch-stop layer extending in a ring around said recess claim 1 , and in particular wherein said ring has a width between 1 and 20 μm6. The sensor device of wherein said etch-stop layer is of a non-dielectric material claim 5 , in particular of aluminum or copper.7. The sensor device of wherein said membrane comprises at least one SiN-layer under tensile stress.8. The sensor device of further comprisingat least one patch of a sensing material, in particular a metal oxide, arranged on said membrane, andelectrodes contacting said sensing material, and in particular wherein said electrodes are metal electrodes.9. The sensor device of wherein said heater comprises at least one metal ...

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Номер записи: 13
14-08-2014 дата публикации

CHEMICAL SENSOR AND METHOD FOR MANUFACTURING SUCH A CHEMICAL SENSOR

Номер: US20140225202A1
Автор: Hummel Réne, Kuemin Cyrill, LECHNER Moritz, Mayer Felix, SUNIER Robert
Принадлежит:

The invention relates to a chemical sensor () comprising a substrate layer () having a front surface () and a back surface () and a sensing layer () arranged on the front surface () of the substrate layer (), the sensing layer () comprising a sensing element () and the substrate layer () being provided with a well () in the back surface () to a form a membrane () that incorporates the sensing element (), wherein the substrate layer () is provided with contact pads () on the back surface () and with vias () extending from the front surface () to the back surface () for electrically connecting the sensing element () with the contact pads (), wherein a handling layer () is provided on top of the sensing layer (), the handling layer () surrounding the sensing element (), and wherein the thickness (d1) of the handling layer () is larger than the thickness (d2) of the substrate layer (). The invention furthermore relates to a method for manufacturing such a chemical sensor (). 122122321234252264. A chemical sensor comprising a substrate layer () having a front surface (.) and a back surface (.) and a sensing layer () arranged on the front surface (.) of the substrate layer () , the sensing layer () comprising a sensing element () and the substrate layer () being provided with a well () in the back surface (.) to a form a membrane () that incorporates the sensing element () , characterized in that{'b': 2', '10', '2', '2', '11', '2', '1', '2', '2', '4', '10, 'the substrate layer () is provided with contact pads () on the back surface (.) and with vias () extending from the front surface (.) to the back surface (.) for electrically connecting the sensing element () with the contact pads (),'}{'b': 17', '3', '17', '4, 'wherein a handling layer () is provided on top of the sensing layer (), the handling layer () surrounding the sensing element (), and'}{'b': 17', '2, 'wherein the thickness (d1) of the handling layer () is larger than the thickness (d2) of the substrate layer ...

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Номер записи: 14
25-12-2019 дата публикации

Gas sensor with bridge structure

Номер: EP3584569A1
Автор: Cyrill Kuemin, Martina Hitzbleck, Matthias Merz, Nicolas Moeller
Принадлежит: SENSIRION AG

A gas sensor comprises a silicon substrate (1) having a recess or opening (2) formed therein. A thin-film bridge (3) is arranged over the recess or opening and forms a hotplate (6) receiving a patch (8) of sensing material. The hotplate (6) is formed by a circular central section (5) of the bridge (3), which is connected to the substrate (1) by means of two thin arms. A first metal layer (12) of tungsten or platinum or gold and a second metal layer (14) of platinum or gold are arranged in the bridge (3), separated by a dielectric layer (13). The first metal layer (12) forms a heater (20), while the second metal layer (14) forms at least part of the electrodes (30, 31) for contacting the sensing material. A temperature sensor (34) can be formed by the first and/or by the second metal layer (14). Openings extending through the bridge (3) can be used to prevent delamination.

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Номер записи: 15