Silicon stamped circuits

A silicon stamp suitable for manufacturing integrated circuits is formed from a silicon wafer having a base 3 and a layer 2 on a surface thereof, which may be silicon dioxide grown on the surface, which is etched to form stamp recesses 4. Sub-nanometre scale powder is applied to the wafer in the form of an ink 5. The wafer is pressed onto a substrate 6, and the ink on areas of the stamp surface not in the recesses is transferred onto the substrate 6. The ink may contain sub-nanoparticles of silicon suspended in a non-reactive liquid vehicle.