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Применить Всего найдено 5. Отображено 5.
14-07-2010 дата публикации

Method forming doped layer on wafer

Номер: CN0101777490A
Автор: LIN YU-PENG, YOU WEI-MING, DENG RUEY-YONG, LIN JIUNN-NAN, TUNG SHENG-CHIEN, SU PIN CHIA, YU-PENG LIN, WEI-MING YOU, RUEY-YONG DENG, JIUNN-NAN LIN, SHENG-CHIEN TUNG, CHIA SU PIN
Принадлежит:

The invention provides a method of forming a doped layer on a wafer, comprising supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source. The ion beam is jetted to the wafer to form a doped layer on the wafer.

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Номер записи: 1
08-05-2012 дата публикации

Alignment device and method for aligning apertures in different plates

Номер: US0008172635B2
Автор: Jiunn-Nan Lin, Ruey-Yong Deng, LIN JIUNN-NAN, DENG RUEY-YONG
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd., LIN JIUNN-NAN, DENG RUEY-YONG, TAIWAN SEMICONDUCTOR MFG, TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

An alignment device for aligning a second aperture in a second plate with a first aperture in a first plate and an alignment method of utilizing the same. The alignment device includes a main body, a first part extending from the main body, and a second part extending from the first part. The main body comprises a first linear dimension exceeding a width of the second aperture for disposing overlying the second plate. The first part comprises a second linear dimension for extending and fitting into the second aperture. The second part comprises a third linear dimension for extending and fitting into the first aperture.

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Номер записи: 2
12-07-2007 дата публикации

Alignment device and method for aligning apertures in different plates

Номер: US2007161320A1
Автор: LIN JIUNN-NAN, DENG RUEY-YONG
Принадлежит:

An alignment device for aligning a second aperture in a second plate with a first aperture in a first plate and an alignment method of utilizing the same. The alignment device includes a main body, a first part extending from the main body, and a second part extending from the first part. The main body comprises a first linear dimension exceeding a width of the second aperture for disposing overlying the second plate. The first part comprises a second linear dimension for extending and fitting into the second aperture. The second part comprises a third linear dimension for extending and fitting into the first aperture.

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Номер записи: 3
15-07-2010 дата публикации

IMPLANTATION QUALITY IMPROVEMENT BY XENON/HYDROGEN DILUTION GAS

Номер: US20100176306A1
Автор: Yu-Peng LIN, Wei-Ming YOU, Ruey-Yong DENG, Jiunn-Nan LIN, Sheng-Chien TUNG, Pin Chia SU, LIN YU-PENG, YOU WEI-MING, DENG RUEY-YONG, LIN JIUNN-NAN, TUNG SHENG-CHIEN, SU PIN CHIA
Принадлежит: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.

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Номер записи: 4
05-07-2011 дата публикации

Implantation quality improvement by xenon/hydrogen dilution gas

Номер: US0007973293B2
Автор: Yu-Peng Lin, Wei-Ming You, Ruey-Yong Deng, Jiunn-Nan Lin, Sheng-Chien Tung, Pin Chia Su, LIN YU-PENG, YOU WEI-MING, DENG RUEY-YONG, LIN JIUNN-NAN, TUNG SHENG-CHIEN, SU PIN CHIA
Принадлежит: Taiwan Semiconductor Manufacturing Co., Ltd., TAIWAN SEMICONDUCTOR MFG, TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.

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Номер записи: 5