Swaged heat sink and heat sink integrated power module

A swaged heat includes a fin base having an outer periphery, and formed with a first fin insert groove and a second fin insert groove interposing a swage portion of a bi-forked shape in between, a first fin fixed to the first fin insert groove of the fin base using the swage portion, a second fin fixed to the second fin insert groove of the fin base using the swage portion, a panel having an opening portion, and placed on the outer periphery of the fin base. The thickness of the outer periphery is smaller than that of the fin base.

Semiconductor device

A semiconductor device with a package fixed to a case, comprising: a package where a semiconductor element and a lead terminal connected to the semiconductor element are sealed up; and a case formed by a frame member and an external terminal disposed to the frame member, characterized in that the package is located inside the frame of the case and the lead terminal is connected with the external terminal.

Resin-sealed semiconductor device

A resin-sealed semiconductor device includes a metallic plate and a semiconductor element soldered thereto. The metallic plate has a semiconductor element mounting region formed on one surface thereof and a plurality of squared recesses defined lengthwise and crosswise in the one surface at approximately regular intervals at locations other than the semiconductor element mounting region.

Rotary electric machine

A rotary electric machine including a brush used to supply a field current to a field winding of a rotor, a brush holder holding the brush, a power circuit portion connected to a heat sink having fins, and a case covering the power circuit portion and the brush holder. An air passage is provided between the brush holder and the fins of the heat sink, and an opening is provided to the case so as to cover component members of the brush holder in a shape conforming to an outer peripheral portion of the brush holder, from which cooling air is allowed to pass through the air passage.

ROTARY ELECTRIC MACHINE

A rotary electric machine including a brush used to supply a field current to a field winding of a rotor, a brush holder holding the brush, a power circuit portion connected to a heat sink having fins, and a case covering the power circuit portion and the brush holder. An air passage is provided between the brush holder and the fins of the heat sink, and an opening is provided to the case so as to cover component members of the brush holder in a shape conforming to an outer peripheral portion of the brush holder, from which cooling air is allowed to pass through the air passage. 17-. (canceled)8. A rotary electric machine including a rotation shaft supported on a housing in a rotatable manner , a stator fixed to the housing and having an armature winding , a rotor fixed to the rotation shaft and having a field core and a field winding , a brush used to supply a field current to the field winding , a brush holder holding the brush , a power circuit portion fixed to a rear side of the housing and connected to a heat sink having fins , and a case covering the power circuit portion and the brush holder , the rotary electric machine being characterized in that:an air passage is provided between the brush holder and the fins of the heat sink; andan opening is provided to the case so as to cover component members of the brush holder in a shape conforming to an outer peripheral portion of the brush holder, from which cooling air is allowed to pass through the air passage.9. The rotary electric machine according to claim 8 , characterized in that:the case is provided with a large opening of substantially a same shape as the opening in an outer peripheral portion of the opening.10. The rotary electric machine according to claim 8 , characterized in that:the brush holder is formed of a brush storing portion and a cover portion.11. The rotary electric machine according to claim 9 , characterized in that:the brush holder is formed of a brush storing portion and a cover portion. ...

Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer

An insulating sheet consisting of a metal layer and an unhardened insulating resin layer is formed. The insulating resin layer contains a filler having grains of, e.g., scale-like shape and has thixotropy, and its outer size is larger than that of a bottom surface of a metal plate. The insulating sheet is disposed on a bottom surface of a cavity of a mold die and the metal plate is disposed on an upper surface of the insulating resin layer. On a main surface of the metal plate, a power semiconductor chip connected to a frame and another frame through a wire is mounted. The cavity is fully filled with a liquid mold resin in this state. After that, the insulating resin layer is hardened at the same timing as the hardening of the mold resin, and the insulating resin and the metal plate are fixed to each other. An interface between the insulating resin layer and the metal plate is included in the upper surface of the insulating resin layer.

Brush structure with heat dissipation member

To obtain a rotating electrical machine preventing a functional failure and shortening of the life of brushes caused by a temperature rise of the brushes installed to a vehicle AC power generator or a motor generator. A brush holder holding brushes supplying a field current to a rotor is provided with brush temperature suppressing metal members installed substantially parallel to the brushes in the vicinity of abutment portions of the brushes and slip rings in point-, line-, or surface-contact with the brushes at least at one point besides energization terminals. The brush temperature suppressing metal members not only diffuse heat generated at the brushes, but also function as a heat capacity for a case where a large amount of heat is generated in a short time, such as during regenerative power generation and a start-up operation, and thereby prevent an excessive temperature rise of the brushes.

Power semiconductor device

A small-sized, light-weight, low-cost power semiconductor device with excellent productivity and vibration resistance is obtained. A mold resin casing ( 1 ) is made of a thermosetting resin, such as epoxy resin, and has a top surface ( 1 T) and a bottom surface ( 1 B). A through hole ( 2 ) is formed in a non-peripheral portion (in this example, approximately in the center) of the mold resin casing ( 1 ) to pass through between the top surface ( 1 T) and the bottom surface ( 1 B). Electrodes ( 3 N, 3 P, 4 a , 4 b) have their first ends projected from sides of the mold resin casing ( 1 ). The bottom surface ( 5 B) of a heat spreader ( 5 ) is exposed in the bottom surface ( 1 B) of the mold resin casing ( 1 ). The heat spreader ( 5 ) has an opening ( 6 ) formed around the through hole ( 2 ).

Rotating electric machine stator

A stator of a rotating electric machine includes a stator core, a plurality of insulators and a plurality of concentrated winding coils. The stator core includes an annular yoke and a plurality of teeth. The insulators are located along outer peripheral wall surfaces of the teeth. Each of the insulators includes a plurality of first surfaces and a plurality of second surfaces. The second surfaces connect the first surfaces. The coils are fitted on the teeth on which the insulators have been placed from a radially inner side thereof. The first surfaces of each of the insulators are in contact with inner peripheral surfaces of the coil that is placed on the outer periphery of the insulator.

Power supply unit-integrated dynamoelectric machine

A dynamoelectric machine main body that includes: a housing that is constituted by a rear bracket and a front bracket; a rotor; a stator; and a fan, and a power supply unit that is mounted integrally onto the dynamoelectric machine main body are included, the power supply unit is disposed between the fan and a bottom portion of the rear bracket, and the power supply unit is disposed between the fan and a bottom portion of the rear bracket, and the rear bracket has: air discharge ports that are formed on portions that are positioned radially outside the fan; and air suction ports that have openings nearer to a bottom portion than the power supply unit, and includes a partitioning member for configuring a ventilation channel that extends from the air suction ports to the air discharge ports that is disposed between the power supply unit and the fan.

ROTATING ELECTRICAL MACHINE

A rotating electrical machine includes: a case; a rotor; a stator; a control portion including a field circuit portion used to supply a current to a control circuit and the field winding; a power circuit portion controlling a stator current; a heat sink installed so as to cool the control portion and the power circuit portion; a first waterproof portion providing waterproofing to signal terminals of the power circuit portion and the field circuit portion; a second waterproof portion provided with through-holes from which a part of the control portion and the power circuit portion is exposed and providing waterproofing between the control portion as well as the power circuit portion and the heat sink; and insulation portions installed in the through-holes of the second waterproof portion and isolating the control portion and the power circuit portion from the heat sink.

Capacitor module and semiconductor device using the same

A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the ...

Electric power semiconductor device

A main lead ( 2 ) is a single body comprised of an inner lead ( 2 a ) and an outer lead ( 2 b ) which are integrally formed, the bonding wires are arranged in parallel and fixed onto the inner lead ( 2 a ) by the wire bonding portions ( 3 b ), and the outer lead are exposed from the mold resin to the outside for electrical connection, and a plurality of through holes ( 8 ) penetrating the main terminal lead are formed in the outer vicinity of the wire bonding portions ( 3 b ) within the inner lead ( 2 a ), and the through holes are arranged substantially in parallel to the arrangement direction of the wire bonding portions ( 3 b ) so as to correspond to the entire wire bonding portions ( 3 b ).

Thermal conductivity measurement apparatus and thermal conductivity measurement method

This thermal conductivity measurement apparatus has a first holding member which has an end face that contacts an object to be measured and a distal end face; a second holding member which has an end face that contacts an object to be measured and a distal end face; a heating member which has an end face which abuts the distal end face of the first holding member and a distal end face, and which heats the first holding member; a cooling member which has an end face that abuts the distal end face of the second holding member and a distal end face, and which cools the second holding member; a plurality of temperature sensors provided at the first and the second holding members; and a pressing force application mechanism that applies pressing force to the first holding member, the second holding member, and the object to be measured.

Semiconductor device

The semiconductor device, including an electrode formed on the surface of a semiconductor element; and a metallic ribbon connected to the electrode. The metallic ribbon has a depressed portion on a surface contacting to the electrode, and the metallic ribbon is connected to the electrode in such a state that the metallic ribbon is deformed toward the inside of the depressed portion.

THERMAL CONDUCTIVITY MEASUREMENT DEVICE AND THERMAL CONDUCTIVITY MEASUREMENT METHOD

A thermal conductivity measurement device comprises: first and second clamping members which clamp an object; a heating member which has a contacting end surface which contacts a distal end surface of the first clamping member through a first axial correction member, and a distal end surface on the reverse side of the contacting end surface; a cooling member which has a contacting end surface which contacts a distal end surface of the second clamping member through a second axial correction member, and a distal end surface on the reverse side of the contacting end surface; a plurality of temperature sensors disposed on the clamping members; and a mechanism which applies a pressing force between the heating member and the cooling member. At least one surface of the first axial correction member and the second axial correction member has a convex curved shape, and the other surface is a flat surface. 1. A thermal conductivity measurement device comprising:a first holding member including a contact end face coming into contact with an object to be measured and a distal end face disposed on the side opposite to the contact end face;a second holding member including a contact end face coming into contact with the object to be measured and a distal end face disposed on the side opposite to the contact end face, the second holding member holding the object to be measured together with the first holding member;a heating member including an abutting end face that faces the distal end face of the first holding member and heating the first holding member;a cooling member including an abutting end face that faces the distal end face of the second holding member and cooling the second holding member;an axis correction member sandwiched at least between the distal end face of the first holding member and the abutting end face of the heating member or between the distal end face of the second holding member and the abutting end face of the cooling member and including two faces ...

Capacitor module and semiconductor

A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the ...

Power semiconductor device

A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing (14) is used for integrally covering the lead frame (6, 7, 13), semiconductor device (1), and metal block (15) serving as a substrate mounting the semiconductor device (1). The mold resin surrounding the lead frame (6) and semiconductor device (1) strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame (6).

Power semiconductor device and method for manufacturing power semiconductor device

This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

Capacitor module and semiconductor device using the same

A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the terminal member on the other side of the ceramic capacitor and the N-polarity conductor, and a molded wiring plate on which a major surface of the ceramic capacitor is supported.

Control apparatus-integrated dynamoelectric machine

A dynamoelectric machine main body, power circuit modules and a field circuit module, and a control apparatus that has a heatsink that is prepared by die casting, and that is mounted integrally onto the dynamoelectric machine main body are included, the heatsink including a plurality of convex heat receiving portions that are disposed so as to project from a front surface of a base plate, and that have heat receiving surfaces, the power circuit modules and the field circuit module including seal main body portions that are constituted by an electrically insulating resin that seal switching elements so as to expose bottom surfaces of element heat radiating portions on reference surfaces that have a surface shape that corresponds to a shape of the heat receiving surfaces, and electrical insulation supporting layers being interposed between the bottom surfaces of the heat receiving surfaces and the element heat radiating portions.

ROTATING ELECTRICAL MACHINE

Provided is a rotating electrical machine capable of downsizing. The rotating electrical machine includes: a stator () including an armature winding (); a rotor () provided inside the stator () in a rotatable manner; a power circuit unit () including a power circuit semiconductor switching element, for supplying a current to the armature winding (); and a control board () in which an energization-allowed time corresponding to revolution speed of the rotor () is set, for controlling supply of the current by the power circuit unit (), in which the control board () stops the supply of the current by the power circuit unit () when an integrated time of energization times to the armature winding () is longer than the energization-allowed time. 18-. (canceled)9. A rotating electrical machine , comprising:a stator including an armature winding;a rotor provided inside the stator in a rotatable manner;a power circuit unit including a power circuit semiconductor switching element, for supplying a current to the armature winding; anda control device in which an energization-allowed time corresponding to revolution speed of the rotor is set, for controlling supply of the current by the power circuit unit,wherein the control device stops the supply of the current by the power circuit unit when an integrated time of energization times to the armature winding from the start of the energization is longer than the energization-allowed time.10. A rotating electrical machine according to claim 9 , further comprising a first temperature detection device for detecting a temperature of the power circuit semiconductor switching element claim 9 ,wherein the control device controls the supply of the current by the power circuit unit in accordance with the temperature of the power circuit semiconductor switching element.11. A rotating electrical machine according to claim 10 , wherein the energization-allowed time corresponding to the temperature of the power circuit semiconductor switching ...

RESIN-SEALED SEMICONDUCTOR DEVICE

A resin-sealed semiconductor device includes a metallic plate and a semiconductor element soldered thereto. The metallic plate has a semiconductor element mounting region formed on one surface thereof and a plurality of squared recesses defined lengthwise and crosswise in the one surface at approximately regular intervals at locations other than the semiconductor element mounting region.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Semiconductor device

P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

Semiconductor device

A semiconductor device which satisfies both the requirements for radiation performance and for miniaturization while having a semiconductor element for a heavy current. The semiconductor device has an IGBT element (1) and diode element (2) which are provided on the main surface of the heat spreader (25) in a strip form formed of a metal with excellent heat conductivity and electricity conductivity. In addition, a relay terminal block (20) is provided outside of the IGBT element (1) on the main surface of the heat spreader (25) and the relay terminal block (20), the IGBT element (1) and the diode element (2) are aligned. Then, the external connection electrode plates (81) and (82) are, respectively, provided on both sides of this alignment. The heat spreader (25), the IGBT element (1), the diode element (2), the relay terminal block (20) and the external connection electrode plate (8) are sealed in a resin of a box shape by using transfer molding and the resin package (23) defines the external ...

Power module

A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

Rotating electrical machine

A rotating electrical machine includes: a case; a rotor; a stator; a control portion including a field circuit portion used to supply a current to a control circuit and the field winding; a power circuit portion controlling a stator current; a heat sink installed so as to cool the control portion and the power circuit portion; a first waterproof portion providing waterproofing to signal terminals of the power circuit portion and the field circuit portion; a second waterproof portion provided with through-holes from which a part of the control portion and the power circuit portion is exposed and providing waterproofing between the control portion as well as the power circuit portion and the heat sink; and insulation portions installed in the through-holes of the second waterproof portion and isolating the control portion and the power circuit portion from the heat sink.

Power module

A power module incorporates a switching semiconductor element and a smoothing capacitor and includes a metallic base plate dissipating heat produced by the switching semiconductor element and the smoothing capacitor. The metallic base plate is thermally separated into a first region adjacent to the switching semiconductor element and a second region adjacent to the smoothing capacitor.

REFLOW SOLDERING DEVICE AND REFLOW SOLDERING METHOD

In the present invention, when a power module is soldered to a heatsink, steam which is temperature-adjusted to at least the melting point of a solder is introduced from a steam generating tank into the flow path provided in the heatsink, the heatsink is heated and the solder is melted. Inert gas is introduced into a soldering tank from another route so as not to mix with the steam supplied to the heatsink. Voids in the solder are reduced and condensed by pressure regulation and as a result the negative impact of voids is eliminated. 2. The reflow soldering device according to characterized in that:the heating body is a plate-like member provided fixedly in the soldering tank and formed in such a manner that the soldered work is disposed to be in contact with the heating body; andthe soldered work is disposed on one surface or both surfaces of the heating body.3. The reflow soldering device according to characterized in that:the heating body is a heatsink formed of a plate-like member that is joined to the soldered work with the solder and formed integrally with the soldered work.4. The reflow soldering device according to claim 1 , characterized by further comprising:a pipe portion that is pulled into the soldering tank from the heat transfer medium supplying tank to transport the heat transfer medium,wherein the pipe portion is an elastic joint of an accordion structure.5. A reflow soldering method claim 1 , characterized by comprising:disposing a soldered work to which solder is applied on a heating body in a soldering tank;reducing an internal pressure of the soldering tank;introducing an inert gas into the soldering tank;supplying a heat transfer medium which is temperature-adjusted at least to a melting point of the solder to a flow path provided in the heating body by a route isolated from an internal space of the soldering tank to melt the solder by heating the heating body and the soldered work;reducing voids in the solder by reducing the internal pressure ...

Power semiconductor device

A small-sized, light-weight, low-cost power semiconductor device with excellent productivity and vibration resistance is obtained. A mold resin casing (1) is made of a thermosetting resin, such as epoxy resin, and has a top surface (1T) and a bottom surface (1B). A through hole (2) is formed in a non-peripheral portion (in this example, approximately in the center) of the mold resin casing (1) to pass through between the top surface (1T) and the bottom surface (1B). Electrodes (3N, 3P, 4a, 4b) have their first ends projected from sides of the mold resin casing (1). The bottom surface (5B) of a heat spreader (5) is exposed in the bottom surface (1B) of the mold resin casing (1). The heat spreader (5) has an opening (6) formed around the through hole (2).

Semiconductor device

A semiconductor device which satisfies both the requirements for radiation performance and for miniaturization while having a semiconductor element for a heavy current. The semiconductor device has an IGBT element (1) and diode element (2) which are provided on the main surface of the heat spreader (25) in a strip form formed of a metal with excellent heat conductivity and electricity conductivity. In addition, a relay terminal block (20) is provided outside of the IGBT element (1) on the main surface of the heat spreader (25) and the relay terminal block (20), the IGBT element (1) and the diode element (2) are aligned. Then, the external connection electrode plates (81) and (82) are, respectively, provided on both sides of this alignment. The heat spreader (25), the IGBT element (1), the diode element (2), the relay terminal block (20) and the external connection electrode plate (8) are sealed in a resin of a box shape by using transfer molding and the resin package (23) defines the external ...

Semiconductor device and method of manufacturing the same

A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

Semiconductor device and method of manufacturing the same

A metal component and a heat dissipation member are integrated with each other in a plurality of protrusion-recess portions where the plurality of recess portions and the plurality of protrusion portions contact each other. A first protrusion-recess portion as a part of the plurality of protrusion-recess portions is greater in height direction dimension than a second protrusion-recess portion other than the first protrusion-recess portion among the plurality of protrusion-recess portions. A wall surface of the first protrusion-recess portion includes a first wall surface portion having a first inclination angle to a height direction, and a second wall surface portion having a second inclination angle different from the first inclination angle.

POWER MODULE, POWER SEMICONDUCTOR DEVICE AND POWER MODULE MANUFACTURING METHOD

The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Power semiconductor device

A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing ( 14 ) is used for integrally covering the lead frame ( 6, 7, 13 ), semiconductor device ( 1 ), and metal block ( 15 ) serving as a substrate mounting the semiconductor device ( 1 ). The mold resin surrounding the lead frame ( 6 ) and semiconductor device ( 1 ) strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame ( 6 ).

ROTATING ELECTRICAL MACHINE

To obtain a rotating electrical machine preventing a functional failure and shortening of the life of brushes caused by a temperature rise of the brushes installed to a vehicle AC power generator or a motor generator. A brush holder holding brushes supplying a field current to a rotor is provided with brush temperature suppressing metal members installed substantially parallel to the brushes in the vicinity of abutment portions of the brushes and slip rings in point-, line-, or surface-contact with the brushes at least at one point besides energization terminals. The brush temperature suppressing metal members not only diffuse heat generated at the brushes, but also function as a heat capacity for a case where a large amount of heat is generated in a short time, such as during regenerative power generation and a start-up operation, and thereby prevent an excessive temperature rise of the brushes. 1. A rotating electrical machine , characterized by comprising:a rotation shaft supported in a rotatable manner on a housing having a front bracket and a rear bracket;a stator fixed to the housing and having an armature winding;a rotor fixed to the rotation shaft and having a field core and a field winding;slip rings fixed to the rotation shaft and supplying a field current to the field winding;a positive brush and a negative brush supplying the field current to the field winding via the slip rings; anda brush holder made of resin and holding the both brushes in storage portions in a mutually electrically isolated state and having terminals supplying the field current to the brushes,wherein the brush holder includes brush temperature suppressing metal members which are installed in the brush storage portions and come into contact with the brushes.2. The rotating electrical machine according to claim 1 , characterized in that:the brush temperature suppressing metal members are insert-molded in the brush holder.3. The rotating electrical machine according to claim 1 , ...

Power module

Obtained is a power module which is excellent in electromagnetic shielding effects, is rarely influenced by external noises and acts as an external noise source with difficulty. An insulating substrate (5) is bonded through a solder (4) to a top surface of a heat sink (3) fixed to a support plate (2). A DC capacitor (16) is fixed to a bottom face of the heat sink (3) by adhesion. A control substrate (11) having a control IC (13) mounted thereon is fixed to the support plate (2). Moreover, a plurality of electrodes (10), a DC side electrode and refrigerant inlet-outlet (9) and a control connector (15) are provided on the support plate (2). A case (1) is fixed to a peripheral portion of the support plate (2), and surrounds the insulating substrate (5), the control substrate (11), the heat sink (3) and the DC capacitor 16 together with the support plate (2). Both the case (1) and the support plate (2) have conducting property.

Electric power semiconductor device and method for producing same

An electric power semiconductor device includes a power module and a heat dissipating member connected to the power module through a heat-conductive insulating resin sheet in which a mold resin part included in the power module has a protruding part in its peripheral part to prevent the heat-conductive insulating resin sheet from expanding in a planar direction. The heat-conductive insulating resin sheet is slightly thicker than the protruding part and has a resin exuding part exuded from a small gap between the protruding part and the heat dissipating member while the power module and the heat dissipating member are heated and pressurized to be bonded.

POWER SEMICONDUCTOR MODULE

A power semiconductor module () includes: an electrode plate () in which a body portion () and an external connection terminal portion () are integrally formed, and the body portion () is arranged on the same flat surface; a semiconductor chip () mounted on one surface (mounting surface) () of the body portion (); and a resin package () in which the other surface (heat dissipation surface) () of the body portion () is exposed, and the body portion () of the electrode plate () and the semiconductor chip () are sealed with resin. The heat dissipation surface () is the same surface as the bottom () of the resin package (); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved. 1. A power semiconductor module comprising:a plurality of electrode plates in each of which an external connection terminal portion and a body portion are integrally formed, and the body portion is arranged on the same flat surface;a semiconductor chip mounted on one surface of the body portion of said electrode plate; anda resin package in which at least a part of the other surface of the body portion of said electrode plate is exposed, and the body portion of said electrode plate and said semiconductor chip are sealed with resin.2. The power semiconductor module according to claim 1 ,wherein the width of the external connection terminal portion is narrower than the width of the body portion of said electrode plate.3. The power semiconductor module according to claim 2 ,wherein the exposed surface of the body portion of said electrode plate forms the same surface as the bottom of said resin package on the exposed surface side, and the periphery of a base portion of the external connection terminal portion is covered with resin except for the same surface as the exposed surface of the body portion of said electrode plate.4. The power semiconductor module according to claim 3 ,wherein the body portion of said electrode plate is formed ...

Power semiconductor module

A power semiconductor module (100) includes: an electrode plate (2) in which a body portion (2a) and an external connection terminal portion (2b) are integrally formed, and the body portion (2a) is arranged on the same flat surface; a semiconductor chip (1) mounted on one surface (mounting surface) (2c) of the body portion (2a); and a resin package (3) in which the other surface (heat dissipation surface) (2d) of the body portion (2a) is exposed, and the body portion (2a) of the electrode plate (2) and the semiconductor chip (1) are sealed with resin. The heat dissipation surface (2d) is the same surface as the bottom (3a) of the resin package (3); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved.

Electric power semiconductor device

A main lead ( 2 ) is a single body comprised of an inner lead ( 2 a) and an outer lead ( 2 b) which are integrally formed, the bonding wires are arranged in parallel and fixed onto the inner lead ( 2 a) by the wire bonding portions ( 3 b), and the outer lead are exposed from the mold resin to the outside for electrical connection, and a plurality of through holes ( 8 ) penetrating the main terminal lead are formed in the outer vicinity of the wire bonding portions ( 3 b) within the inner lead ( 2 a), and the through holes are arranged substantially in parallel to the arrangement direction of the wire bonding portions ( 3 b) so as to correspond to the entire wire bonding portions ( 3 b).

Power module

In a power module ( 111 ), a free-wheeling diode ( 1 A), an IGBT ( 1 B), and a capacitor ( 20 ) for smoothing direct current are disposed directly on a surface ( 2 BS) of a conductive heat sink ( 2 B) with through holes ( 2 BH). The rear electrodes of the free wheeling diode ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are bonded to the heat sink ( 2 B) for example with solder, whereby the diode ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are electrically connected with the heat sink ( 2 B). The front electrodes of the diode ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are connected with each other for example by wires ( 7 ). In the heat sink ( 2 B), a cooling medium flows through the through holes ( 2 BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

Power module

A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

ELECTRIC ROTATING MACHINE

Two or more switching devices () and two or more lead frames ( and ) are integrally molded by use of a molding resin () so that a power module () is formed; the power module () is made to adhere to a heat sink () via an insulating material (); the power module () and the heat sink () are fixed to a housing () of the power module composite (); the power module composite () is fixed to a case () of an electric rotating machine () via the housing (). 1. An electric rotating machine comprising:a rotor fixed on the rotor shaft;a stator that is disposed in such a way as to face the rotor and is provided with a stator winding;a case that pivotably supports the rotor shaft and holds the stator; anda control apparatus that is fixed to the case and has a power module composite provided with an electric-power conversion circuit that performs electric-power conversion between the stator winding and an external DC power source and a control apparatus having a control circuit unit that controls the electric-power conversion circuit,wherein the electric-power conversion circuit provided in the power module composite is controlled by the control circuit unit so as to convert DC power from an external DC power source into AC power and supply the AC power to the stator winding or so as to convert AC power generated across the stator winding into DC power and supply the DC power to the DC power source,wherein the power module composite includes a power module provided with switching devices included in the electric-power conversion circuit, a housing containing the power module, and a heat sink that is fixed to the housing and refrigerates the power module,wherein the power module includes a first lead frame connected with a first electrode of the switching device, a second lead frame connected with a second electrode of the switching device, a third lead frame connected with a third electrode of the switching device, and a molding resin for integrally molding the first lead frame, ...

Power module

A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.

Mold resin-sealed power semiconductor device having insulating resin layer fixed on bottom surface of heat sink and metal layer on the resin layer

An insulating sheet consisting of a metal layer and an unhardened insulating resin layer is formed. The insulating resin layer contains a filler having grains of, e.g., scale-like shape and has thixotropy, and its outer size is larger than that of a bottom surface of a metal plate. The insulating sheet is disposed on a bottom surface of a cavity of a mold die and the metal plate is disposed on an upper surface of the insulating resin layer. On a main surface of the metal plate, a power semiconductor chip connected to a frame and another frame through a wire is mounted. The cavity is fully filled with a liquid mold resin in this state. After that, the insulating resin layer is hardened at the same timing as the hardening of the mold resin, and the insulating resin and the metal plate are fixed to each other. An interface between the insulating resin layer and the metal plate is included in the upper surface of the insulating resin layer.

Power module, power semiconductor device and power module manufacturing method

The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Semiconductor device having built-in capacitors

P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE

This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

Power module

A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Thermal conductivity measurement device and thermal conductivity measurement method

A thermal conductivity measurement device comprises: first and second clamping members which clamp an object; a heating member which has a contacting end surface which contacts a distal end surface of the first clamping member through a first axial correction member, and a distal end surface on the reverse side of the contacting end surface; a cooling member which has a contacting end surface which contacts a distal end surface of the second clamping member through a second axial correction member, and a distal end surface on the reverse side of the contacting end surface; a plurality of temperature sensors disposed on the clamping members; and a mechanism which applies a pressing force between the heating member and the cooling member. At least one surface of the first axial correction member and the second axial correction member has a convex curved shape, and the other surface is a flat surface.

Power module

In a powder module ( 111 ), a free-wheeling diode ( 1 A), an IGBH ( 1 B), and a capacitor ( 20 ) for smoothing direct current are disposed directly on a surface ( 2 BS) of a conductive heat sink ( 2 B) with through holes ( 2 BH). The rear electrodes of the free-wheeling diode ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are bonded to the heat sink ( 2 B) for example with solder, whereby the diode ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are electrically connected with the heat sink ( 2 B). The front electrodes of the diodes ( 1 A), the IGBT ( 1 B), and the capacitor ( 20 ) are connected with each other for example by wires ( 7 ). In the heat sink ( 2 B), a cooling medium flows through the through holes ( 2 BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

ELECTRIC ROTATING MACHINE

An electric rotating machine is provided that efficiently radiates heat, caused in the vicinity of a portion where a brush and a slip ring makes contact with each other, to the outside of a brush holder and that can prevent the temperature of the brush from excessively rising. The brush holder holding the brush that supplies a magnetic-field current to a magnetic-field winding by way of the slip ring is provided with an energization terminal that electrically connects a magnetic-field circuit with the brush and a brush cooling metal member that cools the brush; the brush cooling metal member radiates heat, generated in the vicinity of a contact portion between the brush and the slip ring, to the outside of the brush holder. 1. An electric rotating machine comprising:a rotor having a magnetic-field iron core and a magnetic-field winding that are fixed on a rotation axle;a slip ring that is fixed on the rotation axle and supplies a magnetic-field current to the magnetic-field winding;a stator that is disposed on the outer circumferential surface of the rotor through a gap and has an armature winding;a housing to which the stator is fixed;a brush holder that is fixed to the housing and holds a brush that supplies a magnetic-field current to the magnetic-field winding by way of the slip ring; anda heat sink that is fixed to the housing and is equipped with a magnetic-field circuit for controlling the magnetic-field current and a power circuit for controlling an armature current flowing in the armature winding, wherein the brush holder is provided with an energization terminal for electrically connecting the magnetic-field circuit with the brush and a brush cooling metal member for cooling the brush.2. The electric rotating machine according to claim 1 , wherein the brush cooling metal member is electrically insulated from the brush.3. The electric rotating machine according to claim 1 , wherein the brush cooling metal member is insertion-molded in the brush holder.4. ...

CONTROL APPARATUS-INTEGRATED DYNAMOELECTRIC MACHINE

A dynamoelectric machine main body, power circuit modules and a field circuit module, and a control apparatus that has a heatsink that is prepared by die casting, and that is mounted integrally onto the dynamoelectric machine main body are included, the heatsink including a plurality of convex heat receiving portions that are disposed so as to project from a front surface of a base plate, and that have heat receiving surfaces, the power circuit modules and the field circuit module including seal main body portions that are constituted by an electrically insulating resin that seal switching elements so as to expose bottom surfaces of element heat radiating portions on reference surfaces that have a surface shape that corresponds to a shape of the heat receiving surfaces, and electrical insulation supporting layers being interposed between the bottom surfaces of the heat receiving surfaces and the element heat radiating portions.

POWER SEMICONDUCTOR DEVICE

According to a power semiconductor device of the present invention, it comprises a plurality of lead frames formed into like a wiring pattern, a power semiconductor element joined onto the lead frame, and a capacitor placed between mutually adjacent two lead frames, and is encapsulated with a mold resin. The capacitor is characterized in that external electrodes of that capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor.

Semiconductor device

A semiconductor device of the invention comprises a semiconductor element provided within a housing, a bonding wire, a sealing resin member covering the semiconductor element and bonding wire, and a sheet member. The sheet member is fixed in the housing and arranged out of contact with the bonding wire, and moreover buried in the sealing resin member. Because the sheet member restrains the sealing resin member from vibrating, the bonding wire is connected with improved reliability. In place of the sheet member, it is possible to use a pillar member fixed on an insulating substrate. The semiconductor device is suitable for use on a mobile body, such as a vehicle, which proceeds with vibrations.

Power module

In a power module (111), a free-wheeling diode (1A), an IGBT (1B), and a capacitor (20) for smoothing direct current are disposed directly on a surface (2BS) of a conductive heat sink (2B) with through holes (2BH). The rear electrodes of the freewheeling diode (1A), the IGBT (1B), and the capacitor (20) are bonded to the heat sink (2B) for example with solder, whereby the diode (1A), the IGBT (1B), and the capacitor (20) are electrically connected with the heat sink (2B). The front electrodes of the diode (1A), the IGBT (1B), and the capacitor (20) are connected with each other for example by wires (7). In the heat sink (2B), a cooling medium flows through the through holes (2BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

Electric rotating machine

An electric rotating machine is provided that efficiently radiates heat, caused in the vicinity of a portion where a brush and a slip ring makes contact with each other, to the outside of a brush holder and that can prevent the temperature of the brush from excessively rising. The brush holder holding the brush that supplies a magnetic-field current to a magnetic-field winding by way of the slip ring is provided with an energization terminal that electrically connects a magnetic-field circuit with the brush and a brush cooling metal member that cools the brush; the brush cooling metal member radiates heat, generated in the vicinity of a contact portion between the brush and the slip ring, to the outside of the brush holder.

Electric rotating machine

Two or more switching devices ( 36 ) and two or more lead frames ( 41, 42, 43 , and 44 ) are integrally molded by use of a molding resin ( 37 ) so that a power module ( 30 ) is formed; the power module ( 30 ) is made to adhere to a heat sink ( 32 ) via an insulating material ( 31 ); the power module ( 30 ) and the heat sink ( 32 ) are fixed to a housing ( 33 ) of the power module composite ( 23 ); the power module composite ( 23 ) is fixed to a case ( 6 ) of an electric rotating machine ( 1 ) via the housing ( 33 ).

Power semiconductor device

According to a power semiconductor device of the present invention, it comprises a plurality of lead frames formed into like a wiring pattern, a power semiconductor element joined onto the lead frame, and a capacitor placed between mutually adjacent two lead frames, and is encapsulated with a mold resin. The capacitor is characterized in that external electrodes of that capacitor are connected to the lead frames each through a stress-relaxation structure portion that is lower in rigidity than the capacitor.

Semiconductor device

A semiconductor device with a package fixed to a case, comprising: a package where a semiconductor element and a lead terminal connected to the semiconductor element are sealed up; and a case formed by a frame member and an external terminal disposed to the frame member, characterized in that the package is located inside the frame of the case and the lead terminal is connected with the external terminal.

Semiconductor device

A semiconductor device of the invention comprises a semiconductor element provided within a housing, a bonding wire, a sealing resin member covering the semiconductor element and bonding wire, and a sheet member. The sheet member is fixed in the housing and arranged out of contact with the bonding wire, and moreover buried in the sealing resin member. Because the sheet member restrains the sealing resin member from vibrating, the bonding wire is connected with improved reliability. In place of the sheet member, it is possible to use a pillar member fixed on an insulating substrate. The semiconductor device is suitable for use on a mobile body, such as a vehicle, which proceeds with vibrations.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base.

Power module

A power module includes a box-shaped smoothing capacitor (20) for smoothing a DC supply voltage to be externally applied to a power semiconductor device (5). The smoothing capacitor (20) is in contact with a side surface of a case frame (6) including a side (along which an N-terminal (8N) and a P-terminal (8P) are arranged) of a top surface of the case frame (6), and has a top surface level with the top surface of the case frame (6). An N-electrode (21N) and a P-electrode (21P) of the smoothing capacitor (20) are disposed on the top surface of the smoothing capacitor (20) and in proximity to the N-terminal (8N) and the P-terminal (8P) of a power module body portion (99), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

Semiconductor Device and Method for Manufacturing the Same

A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base. 1. A semiconductor device comprising a power module unit , a fin base , and a radiator fin , a module base,', 'a power semiconductor element mounted on the module base, and', 'a mold resin sealing the power semiconductor element,, 'the power module unit including'} a heat radiation diffusion portion fitted with the radiator fin, and', 'a base portion formed on the heat radiation diffusion portion, the module base being joined to the base portion,, 'the fin base including'}the heat radiation diffusion portion being larger in cross-sectional area than the module base.2. The semiconductor device according to claim 1 , whereinthe module base has a first recess-projection portion, andthe base portion has a second recess-projection portion fitted to the first recess-projection portion.3. The semiconductor device according to claim 2 , whereinthe first recess-projection portion extends in a first direction, andthe second recess-projection portion extends in the first direction.4. The semiconductor device according to claim 3 , wherein at least one of the first recess-projection portion and the second recess-projection portion has a discontinuous part.5. The semiconductor device according to claim 1 , wherein the base portion has a first thickness,', 'the heat radiation diffusion portion has a second thickness, and', 'the second thickness is larger than the first thickness., 'in the fin base,'}6. The semiconductor device according to claim 1 , wherein a deformation prevention portion is formed on a first side of the heat radiation diffusion portion claim 1 , the first side ...

Semiconductor Device and Method of Manufacturing the Same

A metal component and a heat dissipation member are integrated with each other in a plurality of protrusion-recess portions where the plurality of recess portions and the plurality of protrusion portions contact each other. A first protrusion-recess portion as a part of the plurality of protrusion-recess portions is greater in height direction dimension than a second protrusion-recess portion other than the first protrusion-recess portion among the plurality of protrusion-recess portions. A wall surface of the first protrusion-recess portion includes a first wall surface portion having a first inclination angle to a height direction, and a second wall surface portion having a second inclination angle different from the first inclination angle.

ELECTRIC POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

An electric power semiconductor device includes a power module and a heat dissipating member connected to the power module through a heat-conductive insulating resin sheet in which a mold resin part included in the power module has a protruding part in its peripheral part to prevent the heat-conductive insulating resin sheet from expanding in a planar direction. The heat-conductive insulating resin sheet is slightly thicker than the protruding part and has a resin exuding part exuded from a small gap between the protruding part and the heat dissipating member while the power module and the heat dissipating member are heated and pressurized to be bonded. 1. An electric power semiconductor device comprising a power module and a heat dissipating member connected to the power module , wherein , the power module has a metal wiring member mounting a power semiconductor element on a mounting face , and a molded resin part sealing the power semiconductor element and the metal wiring member in a state that an opposed face opposite to the mounting face is exposed in the metal wiring member; and the heat dissipating member is arranged on the opposed face with a heat-conductive insulating resin sheet provided therebetween , in which ,one of the molded resin part and the heat dissipating member has a protruding part configured to have a height slightly smaller than a thickness of the heat-conductive insulating resin sheet in a thickness direction of the electric power semiconductor device, the protruding part in the molded resin part is formed in a peripheral part of the molded resin part, and the protruding part in the heat dissipating member is formed to be opposed to the peripheral part of the molded resin part;the heat-conductive insulating resin sheet has a resin exuding part configured to extend beyond the peripheral part of the molded resin part to an outside of the molded resin part in a direction perpendicular to the thickness direction; andthe electric power ...

Swaged heat sink and heat sink integrated power module

A swaged heat includes a fin base having an outer periphery, and formed with a first fin insert groove and a second fin insert groove interposing a swage portion of a bi-forked shape in between, a first fin fixed to the first fin insert groove of the fin base using the swage portion, a second fin fixed to the second fin insert groove of the fin base using the swage portion, a panel having an opening portion, and placed on the outer periphery of the fin base. The thickness of the outer periphery is smaller than that of the fin base.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member. 1. A semiconductor device comprising: projections and depressions aligned such that surfaces of the projections in a width direction face one another in one direction,', 'a projecting peripheral portion surrounding the projections and the depressions and having a height greater than or equal to a height of the projections of the projections and the depressions; and', 'projections provided in the depressions of the projections and the depressions in a direction intersecting the projections and the depressions and having a height greater than a height of bottom surfaces of the depressions of the projections and the depressions and smaller than the height of the projections of the projections and the depressions;, 'a metal member provided, on its lower surface, with'}an insulating layer formed on an upper surface of the metal member;a metal layer formed on an upper surface of the insulating layer;a semiconductor element joined to an upper surface of the metal layer; anda sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.2. The semiconductor device according to claim 1 , whereinthe ...

Thermal conductivity measurement apparatus and thermal conductivity measurement method

This thermal conductivity measurement apparatus has a first holding member which has an end face that contacts an object to be measured and a distal end face; a second holding member which has an end face that contacts an object to be measured and a distal end face; a heating member which has an end face which abuts the distal end face of the first holding member and a distal end face, and which heats the first holding member; a cooling member which has an end face that abuts the distal end face of the second holding member and a distal end face, and which cools the second holding member; a plurality of temperature sensors provided at the first and the second holding members; and a pressing force application mechanism that applies pressing force to the first holding member, the second holding member, and the object to be measured.

Rotating electric machine stator

A stator of a rotating electric machine includes a stator core, a plurality of insulators and a plurality of concentrated winding coils. The stator core includes an annular yoke and a plurality of teeth. The insulators are located along outer peripheral wall surfaces of the teeth. Each of the insulators includes a plurality of first surfaces and a plurality of second surfaces. The second surfaces connect the first surfaces. The coils are fitted on the teeth on which the insulators have been placed from a radially inner side thereof. The first surfaces of each of the insulators are in contact with inner peripheral surfaces of the coil that is placed on the outer periphery of the insulator.

Device with power semiconductor, comprises assembly frame and metal block as substrate for semiconductor component encapsulated by moulded resin

The device comprises a semiconductor component (1) with upper and lower surfaces carrying the main electrodes (1a,1b) and the signal electrode (1c), a metal block (15) as a substrate for the semiconductor component, the assembly frames (6,7,13), a casing (14) of moulded resin covering in a single piece the semiconductor component, the metal block, and the assembly frames, and a heat sink (16). The assembly frames (6,7) are connected to the main electrodes (1a,1b), respectively, the former by the intermediary of a part of the metal block (15), and the assembly frame (13) is connected to the signal electrode (1c) by the intermediary of an aluminum wire (9). The moulded resin surrounding the assembly frames and the semiconductor component reinforces the joint and improves the resistance to failure by fatigue in the connecting parts of the assembly frames. Parts (6b,7b) of the assembly frames (6,7) are bare at the exterior of the casing (14) and have the role of external electrodes which are laid out projecting with respect to the main surface (14c) of the casing (14) in a direction perpendicular to the metal block (15). The moulded resin has the coefficient of thermal expansion different from that of the metal block (15) by not more than +/- 20%. In the second embodiment, the external electrodes are placed on the parts of the casing projecting in a direction perpendicular to the metal block. In the third embodiment, the external electrodes are placed on points situated towards the interior of the casing and soldered to the parts of the assembly frames. In the fourth embodiment, the metal block is with projecting elements provided to improve the adhesion of moulded resin. In the fifth embodiment, a part of the assembly frame is left bare at the level of the main surface of the casing. In the sixth embodiment, another metal block is fastened to the part of the assembly frame left bare. In the seventh embodiment, both metal blocks are with spaces for a refrigerant. In the ...

CAPACITOR MODULE AND SEMICONDUCTOR DEVICE USING THE CAPACITOR MODULE

A capacitor module incorporating a ceramic capacitor having terminal members for reducing stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device using the capacitor module. The capacitor module and the semiconductor device are designed to have a reduced size and improved reliability. The semiconductor device has a power converter circuit constituted by switching devices and diodes, a P-polarity conductor and an N-polarity conductor for supplying electric power to the power converter circuit, a ceramic capacitor having two external electrodes, flexible terminal members connected to the external electrodes, a heat radiation plate provided at the bottom of a case, an insulating resin with which the power converter circuit is covered, a P-polarity connection conductor for connection between the terminal member on one side of the ceramic capacitor and the P-polarity conductor, an N-polarity connection conductor for connection between the terminal member on the other side of the ceramic capacitor and the N-polarity conductor, and a molded wiring plate on which a major surface of the ceramic capacitor is supported.

DYNAMOELECTRIC MACHINE WITH INTEGRATED CONTROL DEVICE

POWER SEMICONDUCTOR DEVICE

CAPACITOR MODULE AND SEMICONDUCTOR DEVICE USING THE CAPACITOR MODULE

Un module de condensateur comprenant un condensateur à céramique pourvu d'éléments de cosses en vue de réduire la contrainte causée par une contrainte thermique ou une électrostriction dans le condensateur à céramique lui-même, et un dispositif semi-conducteur faisant usage du module de condensateur. Le module de condensateur et le dispositif semi-conducteur sont conçus de sorte à ce que leur taille soit réduite et leur fiabilité accrue. Le dispositif semi-conducteur comprend un circuit de conversion électrique composé de dispositifs de connexion et de diodes, d'un conducteur à polarité P (41) et d'un conducteur à polarité N (43) destinés à alimenter électriquement le circuit de conversion électrique, d'un condensateur à céramique pourvu de deux électrodes externes, d'éléments de cosses flexibles connectés aux électrodes externes, d'une plaque à rayonnement thermique placée dans le fond d'un boîtier, d'une résine isolante avec laquelle le circuit de conversion électrique est recouvert. A capacitor module comprising a ceramic capacitor provided with lug elements in order to reduce the stress caused by thermal stress or electrostriction in the ceramic capacitor itself, and a semiconductor device making use of the capacitor module . The capacitor module and the semiconductor device are designed so that their size is reduced and their reliability is increased. The semiconductor device comprises an electrical conversion circuit composed of connection devices and diodes, a P polarity conductor (41) and an N polarity conductor (43) intended to supply the electrical conversion circuit electrically. , a ceramic capacitor provided with two external electrodes, flexible terminal elements connected to the external electrodes, a thermal radiation plate placed in the bottom of a housing, an insulating resin with which the circuit electrical conversion is covered.

DYNAMOELECTRIC MACHINE WITH INTEGRATED POWER SUPPLY UNIT

Capacitor module and this semiconductor device using

Kondensatormodul (60; 60A; 60B; 60C; 60D; 60E; 60F; 60G), umfassend: zwei Keramikkondensatoren (61) mit je einer Hauptfläche, je einem Paar von Seitenflächen und externen Elektroden (67), die jeweils an einem Paar von Seitenflächen vorhanden sind, die in entgegengesetzte Richtungen weisen; Anschlussteile (68; 63a, 64a), die jeweils mit externen Elektroden (67) der Keramikkondensatoren (61) verbunden sind, wobei die Anschlussteile (68; 63a, 64a) elektrisch leitend und flexibel sind; einen Positivpolaritäts-Verbindungsleiter (63), der Anschlussteile (68; 63a) an jeweils einer Seite der Keramikkondensatoren (61) mit einem Positivpolaritäts-Leiter (41) verbindet, der extern vorgesehen ist; einen Negativpolaritäts-Verbindungsleiter (64), der Anschlussteile (68; 64a) an der jeweils anderen Seite der Keramikkondensatoren (61) mit einem Negativpolaritäts-Leiter (43) verbindet, der extern vorgesehen ist; und eine Leiterplatte (62), die mit dem Positivpolaritäts-Verbindungsleiter (63) sowie dem Negativpolaritäts-Verbindungsleiter (64) versehen ist; wobei die Leiterplatte (62) zwischen den Keramikkondensatoren (61) angeordnet ist; die Leiterplatte (62) aus einem Kunstharz (65) ausgebildet ist, das derart geformt ist, dass der Positivpolaritäts-Verbindungsleiter (63) und der Negativpolaritäts-Verbindungsleiter (64) in die Leiterplatte (62) eingelegt sind und mit der Leiterplatte (62) einstückig geformt sind; die Hauptflächen der Keramikkondensatoren (61) an Hauptflächen der Leiterplatte (62) angeordnet sind; und jeweils ein flexibles Teil (69) zwischen dem jeweiligen Keramikkondensator (61) und der Leiterplatte (62) angeordnet ist. Capacitor module (60; 60A; 60B; 60C; 60D; 60E; 60F; 60G), comprising: two ceramic capacitors (61) each with a main surface, each with a pair of side surfaces and external electrodes (67), each on a pair of side surfaces are present pointing in opposite directions; Connector parts (68; 63a, 64a) each connected to external electrodes (67) of the ...

Power semiconductor device

According to a power semiconductor device(50) of the present invention, it comprises a plurality of lead frames(1) formed into like a wiring pattern, a power semiconductor element (2) joined onto the lead frame(1), and a capacitor(100) placed between mutually adjacent two lead frames (1), and is encapsulated with a mold resin(5). The capacitor(100) is characterized in that external electrodes(101) of that capacitor(100) are connected to the lead frames(1) each through a stress-relaxation structure portion(39) that is lower in rigidity than the capacitor(100).

Power supply unit-integrated dynamoelectric machine

A dynamoelectric machine main body that includes: a housing that is constituted by a rear bracket and a front bracket; a rotor; a stator; and a fan, and a power supply unit that is mounted integrally onto the dynamoelectric machine main body are included, the power supply unit is disposed between the fan and a bottom portion of the rear bracket, and the power supply unit is disposed between the fan and a bottom portion of the rear bracket, and the rear bracket has: air discharge ports that are formed on portions that are positioned radially outside the fan; and air suction ports that have openings nearer to a bottom portion than the power supply unit, and includes a partitioning member for configuring a ventilation channel that extends from the air suction ports to the air discharge ports that is disposed between the power supply unit and the fan.

Electric power semiconductor device

Elektrische Leistungs-Halbleitervorrichtung, die folgendes aufweist: ein Halbleiterelement (1), das auf einer Chipfläche (DP) angebracht ist; eine Hauptanschluß-Leitung (2), die mit dem Halbleiterelement (1) durch eine Vielzahl von Bonddrähten (3) elektrisch verbunden ist; und ein Formharzmaterial (4), das zumindest das Halbleiterelement (1), die Bonddrähte (3) und die Drahtbondbereiche (3b) der Bonddrähte auf der Hauptanschluß-Leitung einkapselt, so daß daraus ein Gehäuse gebildet ist, wobei es sich bei der Hauptanschluß-Leitung (2) um einen einzigen Körper handelt, der eine innere Leitung (2a) und eine äußere Leitung (2b) aufweist, die in integraler Weise mit der inneren Leitung ausgebildet ist, wobei die Bonddrähte parallel zueinander angeordnet und auf der inneren Leitung (2a) durch die Drahtbondbereiche (3b) fixiert sind und die äußere Leitung von dem Formharzmaterial zur Schaffung einer elektrischen Verbindung nach außen freiliegt, wobei eine Vielzahl von die Hauptanschluß-Leitung durchsetzenden Durchgangsöffnungen (8) außenseitig von den Drahtbondbereichen (3b) innerhalb der inneren Leitung... Electric power semiconductor device comprising: a semiconductor element (1) mounted on a chip surface (DP); a main terminal line (2) electrically connected to the semiconductor element (1) through a plurality of bonding wires (3); and a molding resin material (4) encapsulating at least the semiconductor element (1), the bonding wires (3) and the wire bonding portions (3b) of the bonding wires on the main terminal line to form a housing therefrom; wherein the main terminal lead (2) is a single body having an inner lead (2a) and an outer lead (2b) integrally formed with the inner lead, the bond wires being arranged in parallel with each other and on the inner lead (2a) are fixed by the wire bonding portions (3b) and the outer lead is exposed to the outside of the molding resin material to provide an electrical connection, wherein a plurality of through holes (8) passing ...

Cast resin sealed power semiconductor device and method of manufacturing the same

Es wird eine Isolierschicht ausgebildet, die aus einer Metallschicht und einer ungehärteten Isolierharzschicht besteht. Die Isolierharzschicht enthält einen Füllstoff mit Körnern von beispielsweise schuppenartiger Form, und weist Thixotropie auf, und ihre Außenabmessung ist größer als diejenige einer Bodenfläche einer Metallplatte. Die Isolierschicht ist auf einer Bodenfläche eines Hohlraums einer Gussform angeordnet, und die Metallplatte ist auf einer Oberseite der Isolierharzschicht angeordnet. Auf einer Hauptfläche der Metallplatte ist ein Leistungshalbleiterchip angebracht, der über einen Draht an einen Rahmen und einen weiteren Rahmen angeschlossen ist. Der Hohlraum wird in diesem Stadium vollständig mit einem flüssigen Gießharz gefüllt. Danach wird die Isolierharzschicht mit derselben Zeiteinstellung wie das Aushärten des Gießharzes ausgehärtet, und die Isolierharzschicht und die Metallplatte sind aneinander befestigt. Eine Grenzfläche zwischen der Isolierharzschicht und der Metallplatte ist in der Oberfläche der Isolierharzschicht eingeschlossen. An insulating layer is formed, which consists of a metal layer and an uncured insulating resin layer. The insulating resin layer contains a filler with grains of, for example, scale-like shape, and has thixotropy, and its outer dimension is larger than that of a bottom surface of a metal plate. The insulating layer is disposed on a bottom surface of a cavity of a mold, and the metal plate is disposed on an upper surface of the insulating resin layer. A power semiconductor chip is attached to a main surface of the metal plate and is connected to a frame and a further frame via a wire. At this stage, the cavity is completely filled with a liquid casting resin. Thereafter, the insulating resin layer is cured at the same timing as that of the casting resin, and the insulating resin layer and the metal plate are attached to each other. An interface between the insulating resin layer and the metal plate is enclosed in the ...

Interactive automatic programming method

An interactive automatic programming method in which errors in a part program can be discovered easily and only the required portion of the part program which has been corrected/edited can be executed again. In the method, first, a part program is displayed on the screen of a display. Every inputting of a command of executing one program statement by the operator (S4), one program statement is executed by a programming device and the execution result is displayed on the screen (S6, S7). When the operator judges that errors are included in the part program having executed, the operator inputs a correction command (S5) and locates a cursor on the statement having errors for specifying it. After the program error correction command is inputted (S13, S15), the errors of the program statement is removed. When the operator inputs a re-execution command (S18), the programming device executes again only the required portion of the part program from the part program statement from which errors are eliminated and to the next part program statement (S19).

Semiconductor system comprising casings in envelope with fastening provisions

The semiconductor system (100) comprises casings (20) fastened in an envelope (10), where each casing contains a semiconductor element and connection pins fastened. The envelope (10) is formed by a frame and terminals (11,12) positioned on the frame, and the connection pins are connected to the terminals. The casings (20), in particular 3, are situated in the frame of the envelope (10). Each casing (20) contains a resin encapsulating the semiconductor element and an insulating substrate carrying the semiconductor element so that the rear face of the semiconductor element is exposed to the resin. The rear face of the envelope (10) and the rear face of the casing (20) are practically at the same level. The terminals (11,12) have a spring property, and the rear face of the casing (20) is situated underneath the rear face of the envelope (10). The casing (20) comprises a metal layer applied on the rear face of the insulating substrate. The resin presents a projection in the form of skirting extending downwards and enclosing the insulating substrate, and a cavity enclosed by the projection is filled by an insulating material. The casing (20) comprises several input connection pins which are mutually adjacent. The envelope (10) is constituted by elements in the form of a photo-frame, and the input and the output terminals (11,12) are laid out on the opposite elements of the frame enclosing the casings. The input terminals (11) are laid out in pairs, and several casings (20), for example 3, are placed side-by-side in the envelope (10). The semiconductor elements in the casings are for example power FETs, IGBTs, or similar. In the case of the semiconductor system utilized as a converter, two IGBTs connected in series are required, and in the case of a three-phase motor output three semiconductor elements are required.

Method of defining machining

Unmachined areas are displayed on a CRT screen clearly, and further, the candidates of the optimal tools for the next machining are displayed. A method for defining machining in which areas to be machined and the tools for the machining are designated comprises a first step of displaying the contour of designated areas to he machined; a second step of displaying the contour of areas actually machined by the designated tools; a third step of displaying the contour obtained in the first step and the contour obtained in the second step in superposition; and a fourth step of determining whether or not there is any area unmachined by the designated tools in accordance with the result of the display in the third step, and displaying the candidate tools for machining the unmachined area.

Color filters

The color filter according to the present invention contains black matrix formed by polyimide, which contains light shielding pigments such as carbon black, triiron tetraoxide, etc., instead of the black matrix (15) used in the past, which is formed by a metal thin film such as chromium on a glass substrate (10). An epoxy type silane coupling agent is mixed with a polyimide precursor composition, and this is coated on a glass substrate and then imidized. Thus, the color filter is provided with black matrix having high bonding strength with the glass substrate.

Semiconductor device

A semiconductor device which comprises a semiconductor element installed in a box, a bonding wire, sealing resin body for covering the semiconductor element and the bonding wire, and a plate-like member. The plate-like member is fixed to the box and disposed out of contact with the bonding wire and embedded in the sealing resin body. The plate-like member suppresses vibration of the sealing resin body, thus improving the connection reliability of the bonding wire. The plate-like member may be replaced by a pillow member fixed to an insulation board. The semiconductor device is suitable for use in traveling bodies such as vehicles where vibration occurs.

Dynamo-electric machine

Dynamo-electric machine

Set data retaining method

By the method, set data which are necessary for generation and confirmation of NC data on the basis of programming data can be set in such a manner that they can be utilized again. When a part program or data inputted in an interactive mode are designated, a processor (1) in a programming apparatus searches a set data file in a RAM (3) (S1). When the set data relating to the programming data are not contained in the set data file, a screen for setting the set data is displayed on a CRT (7) and the set data is stored in the set data file in association with the programming data in accordance with the input of the set data by an operator (S5). Thereafter when the same programming data is designated and hence the set data associated with this programming data is contained in the set data file, the set data and a message inquiring whether or not the set data can be used are displayed on the screen (S3). The set data is used for preparation and confirmation of the NC data (S7) and retained in the set data file (S8).

Rotating electric machine stator

A stator of a rotating electric machine includes a stator core, a plurality of insulators and a plurality of concentrated winding coils. The stator core includes an annular yoke and a plurality of teeth. The insulators are located along outer peripheral wall surfaces of the teeth. Each of the insulators includes a plurality of first surfaces and a plurality of second surfaces. The second surfaces connect the first surfaces. The coils are fitted on the teeth on which the insulators have been placed from a radially inner side thereof. The first surfaces of each of the insulators are in contact with inner peripheral surfaces of the coil that is placed on the outer periphery of the insulator.

Digitalisierungsverfahren

Aluminium-bondingdraht für leistungshalbleiter

Es wird ein Aluminiumdraht bereitgestellt, mit dem beim Bonding eines Bondingdrahts für einen Leistungshalbleiter der Draht nicht von einem Keilwerkzeug gelöst wird und eine lange Lebensdauer in einem Leistungszyklustest erreicht wird. Der Aluminiumdraht ist aus einer Aluminiumlegierung mit einer Aluminiumreinheit von 99 Massen-% oder mehr hergestellt und enthält, relativ zu einer Gesamtmenge aller Elemente der Aluminiumlegierung, eine Summe von 0,01 Massen-% oder mehr und 1 Massen-% oder weniger an Eisen und Silizium, wobei in einem Querschnitt in einer Richtung senkrecht zu einer Drahtachse des Aluminiumdrahts ein (111)-Orientierungsindex 1 oder mehr ist, ein (200)-Orientierungsindex von 1 oder weniger ist und ein Flächenanteil von ausgefällten Partikeln in einem Bereich von 0,02% oder mehr bis 2% oder weniger liegt.

Aluminum bonding wire for power semiconductor

An aluminum wire with which, at the time of bonding a bonding wire for a power semiconductor, the wire is not detached from a wedge tool, and a long life is achieved in a power cycle test. The aluminum wire is made of an aluminum alloy having an aluminum purity of 99 mass % or more and contains, relative to a total amount of all elements of the aluminum alloy, a total of 0.01 mass % or more and 1 mass % or less of iron and silicon. In a lateral cross-section in a direction perpendicular to a wire axis of the aluminum wire, an orientation index of is 1 or more, an orientation index of is 1 or less, and an area ratio of precipitated particles is in a range of 0.02% or more to 2% or less.

Halbleitergerät, Netzgerät und Verfahren zum Herstellen eines Halbleitergeräts

Ein Halbleitergerät (100) beinhaltet ein Halbleiterbauteil (1) einen Metallfilm (2) und einen Draht (3). Das Halbleiterbauteil (1) beinhaltet eine Elektrode (11). Der Metallfilm (2) bedeckt die Elektrode (11) des Halbleiterbauteils (1). Der Draht (3) ist an den Metallfilm (2) gebondet. Der Metallfilm (2) weist eine höhere Härte auf als der Draht (3). Eine durchschnittliche Kristallkorngröße in einem kreisförmigen Querschnitt des Drahts (3) ist im ganzen Bereich des Drahts (3) kleiner als oder gleich 5 µm-

Semiconductor device

P-electrode 30a and N-electrode 31a of a semiconductor device 2, and capacitors 10 in a plate-like shape or a block-like shape respectively connected to U-phase 40, V-phase 41, and W-phase 42 having a switching element 20 and a diode 21 are built in a semiconductor device 2, and a single or a plurality of capacitors 10 are respectively connected to P-electrodes 30a and N-electrodes 31a in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

Leistungs-Halbleitervorrichtung

Die vorliegende Erfindung bietet eine klein dimensionierte, leichte, kostengünstige Leistung-Halbleitervorrichtung mit ausgezeichneter Produktivität und Vibrationsbeständigkeit. Ein Formharzgehäuse (1) ist aus einem unter Wärme aushärtenden Kunstharz, wie z. B. Epoxy-Harz, hergestellt und weist eine obere Oberfläche (1T) und eine Bodenfläche (1B) auf. Eine Durchgangsöffnung (2) ist in einem nicht peripheren Bereich (im vorliegenden Beispiel etwa im Zentrum) des Formharzgehäuses (1) ausgebildet und erstreckt sich durchgehend zwischen der oberen Oberfläche (1T) und der Bodenfläche (1B). Elektroden (3N, 3P, 4a, 4b) ragen mit ihren ersten Enden von den Seiten des Formharzgehäuses (1) weg. Die Bodenfläche (5B) des Wärmeverteilers (5) liegt an der Bodenfläche (1B) des Formharzgehäuses (1) frei. Der Wärmeverteiler (5) weist eine um die Durchgangsöffnung (2) herum ausgebildete Öffnung (6) auf.

Rotating electric machine stator

A stator of a rotating electric machine includes a stator core, a plurality of insulators and a plurality of concentrated winding coils. The stator core includes an annular yoke and a plurality of teeth. The insulators are located along outer peripheral wall surfaces of the teeth. Each of the insulators includes a plurality of first surfaces and a plurality of second surfaces. The second surfaces connect the first surfaces. The coils are fitted on the teeth on which the insulators have been placed from a radially inner side thereof. The first surfaces of each of the insulators are in contact with inner peripheral surfaces of the coil that is placed on the outer periphery of the insulator.

Rotating electric machine stator

A stator of a rotating electric machine includes a stator core, a plurality of insulators and a plurality of concentrated winding coils. The stator core includes an annular yoke and a plurality of teeth. The insulators are located along outer peripheral wall surfaces of the teeth. Each of the insulators includes a plurality of first surfaces and a plurality of second surfaces. The second surfaces connect the first surfaces. The coils are fitted on the teeth on which the insulators have been placed from a radially inner side thereof. The first surfaces of each of the insulators are in contact with inner peripheral surfaces of the coil that is placed on the outer periphery of the insulator.

Halbleitervorrichtung und verfahren zum herstellen derselben

Halbleitervorrichtung (100), die Folgendes aufweist:- ein Metallelement (2), das an dessen unterer Fläche Projektionen und Vertiefungen (8) aufweist, die derart angeordnet sind, dass Oberflächen der Projektionen in einer Weitenrichtung sich in der einen Richtung gegenüberliegen, einen vorstehenden peripheren Bereich (7) aufweist, der die Projektionen und Vertiefungen (8) umgibt und eine Höhe aufweist, die höher ist als oder gleich groß ist wie eine Höhe der Projektionen (81, 83, 84, 85) der Projektionen und Vertiefungen (8), und Projektionen (84), die in den Vertiefungen (82) der Projektionen und der Vertiefungen (8) in einer Richtung angeordnet sind, die die Projektionen und die Vertiefungen (8) schneidet, und die eine Höhe aufweisen, die höher ist als die Höhe der Bodenflächen der Vertiefungen (82) der Projektionen und der Vertiefungen (8) und geringer ist als die Höhe der Projektionen (81) der Projektionen und der Vertiefungen (8), und wobei die Breite der Projektion (84) die gleiche Größe wie die Dicke der Projektion (83) aufweist;- eine Isolierschicht (3), die auf einer oberen Fläche des Metallelements (2) ausgebildet ist;- eine Metallschicht (4), die auf einer oberen Fläche der Isolierschicht (3) ausgebildet ist;- ein Halbleiterelement (1), das mit einer oberen Fläche der Metallschicht (4) verbunden ist; und- ein Dichtharz (5), um das Halbleiterelement (1), die Metallschicht (4), die Isolierschicht (3) und das Metallelement (2) abzudichten.

Rotating electrical machine

Provided is a rotating electrical machine capable of downsizing. The rotating electrical machine includes: a stator ( 2 ) including an armature winding ( 9 ); a rotor ( 3 ) provided inside the stator ( 2 ) in a rotatable manner; a power circuit unit ( 18 ) including a power circuit semiconductor switching element, for supplying a current to the armature winding ( 9 ); and a control board ( 6 ) in which an energization-allowed time corresponding to revolution speed of the rotor ( 3 ) is set, for controlling supply of the current by the power circuit unit ( 18 ), in which the control board ( 6 ) stops the supply of the current by the power circuit unit ( 18 ) when an integrated time of energization times to the armature winding ( 9 ) is longer than the energization-allowed time.