26-09-2019 дата публикации
Номер: US20190295919A1
Автор:
Yasuyuki Sanda,
Dai Nakajima,
Haruna Tada,
Hodaka Rokubuichi,
Kiyofumi Kitai,
SANDA YASUYUKI,
NAKAJIMA DAI,
TADA HARUNA,
ROKUBUICHI HODAKA,
KITAI KIYOFUMI,
Sanda, Yasuyuki,
Nakajima, Dai,
Tada, Haruna,
Rokubuichi, Hodaka,
Kitai, Kiyofumi
A semiconductor device includes a power module unit, a fin base, and a plurality of radiator fins. The power module unit and the fin base are integrated together, with a recess-projection portion formed on the power module unit being fitted to a recess-projection portion formed on the fin base. The plurality of radiator fins are integrally fitted on a heat radiation diffusion portion of the fin base. 1. A semiconductor device comprising a power module unit , a fin base , and a radiator fin , a module base,', 'a power semiconductor element mounted on the module base, and', 'a mold resin sealing the power semiconductor element,, 'the power module unit including'} a heat radiation diffusion portion fitted with the radiator fin, and', 'a base portion formed on the heat radiation diffusion portion, the module base being joined to the base portion,, 'the fin base including'}the heat radiation diffusion portion being larger in cross-sectional area than the module base.2. The semiconductor device according to claim 1 , whereinthe module base has a first recess-projection portion, andthe base portion has a second recess-projection portion fitted to the first recess-projection portion.3. The semiconductor device according to claim 2 , whereinthe first recess-projection portion extends in a first direction, andthe second recess-projection portion extends in the first direction.4. The semiconductor device according to claim 3 , wherein at least one of the first recess-projection portion and the second recess-projection portion has a discontinuous part.5. The semiconductor device according to claim 1 , wherein the base portion has a first thickness,', 'the heat radiation diffusion portion has a second thickness, and', 'the second thickness is larger than the first thickness., 'in the fin base,'}6. The semiconductor device according to claim 1 , wherein a deformation prevention portion is formed on a first side of the heat radiation diffusion portion claim 1 , the first side ...
Подробнее