Liquid crystalline light-modulating device

The present invention relates to a light-modulating composition comprising a low molecular weight liquid crystalline material dispersed in a polymer including a non-mesogenic crosslinking monomer reacted with a mesogenic monomer comprising a mesogenic group, a spacer, and one or more reactive functionality.

Process for manufacture of integrated circuit device

The invention relates to a process for making an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane in the presence of a photosensitive or thermally sensitive base generator.

Curable cyclic phosphazene compound and method of preparing the same

Disclosed herein is a curable cyclic phosphazene compound having a low dielectric constant, a low dielectric loss index and high thermal stability, and a method of preparing the same. The curable cyclic phosphozene polymer prepared using the compound has a low dielectric constant and excellent thermal properties, compared to conventional phosphozene polymers.

CURABLE CYCLIC PHOSPHAZENE COMPOUND AND METHOD OF PREPARING THE SAME

Disclosed herein is a curable cyclic phosphazene compound having a low dielectric constant, a low dielectric loss index and high thermal stability, and a method of preparing the same. The curable cyclic phosphozene polymer prepared using the compound has a low dielectric constant and excellent thermal properties, compared to conventional phosphozene polymers.

Process for manufacture of integrated circuit device using inorganic/organic matrix comprising polymers of three dimensional architecture

The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Polymer stabilized in-plane switched LCD

An in-plane switched liquid crystal device IPS LCD which provides fast switching times is formed by filling an empty IPS LCD panel having an array of display elements with a mixture of nematic liquid crystal material and a mesogenic polymerizable material, such as monomers or polymer precursers and suitable photoinitiators, curing, or cross-linking agents, and then polymerizing the mixture such that a phase-separated network of cross-linked polymer strands is formed. The cross-linked network of polymer strands displays an average orientation whose average orientation substantially conforms with nematic orientation of the nematic liquid crystal material in its "field-off" state.

Process for manufacture of integrated circuit device using organosilicate insulative matrices

The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.

Integrated circuit device and process for its manufacture

The invention relates to an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a porous dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.

Poly(methylsilsesquioxane) copolymers and preparation method thereof

The present invention relates to polymethylsilsesquioxane copolymers, and methods for preparing the copolymers and low-dielectric PMSSQ coating films. Polymethylsilsesquioxane copolymer of the present invention is synthesized by a copolymerization reaction using a methyltrialkokxysilane [A: CH 3 Si(OR) 3 ] and α,ω-bistrialkokxysilane compound [B: (RO) 3 Si—X—Y—Si(OR) 3 , wherein X and Y are identical or different hydrocarbon groups and are linked to each other by carbon] as a copolymerization monomer, and it contains Si—OH terminal group more than 10% in content, and has molecular weight ranging from 5,000 to 30,000. The coating film prepared from the low dielectric PMSSQ according to the present invention meets the two inevitable requirements for next generation semiconductor industry, i.e., mechanical strength (hardness 1.9 Gpa, Modulus 12 Gpa) and low dielectric property (<2.3).

Norbornene-based polymer having low dielectric constant and low-loss property, and insulating material, printed circuit board and functional element, using the same

【課題】低誘電率、低損失特性、及び優れた工程性を有する低損失絶縁材として有用である新規なノルボルネン系重合体、これを用いた絶縁材、印刷回路基板、及び機能性素子を提供する。 【解決手段】一般式（１）で表される繰り返し単位を少なくとも１種含む、ノルボルネン系重合体である。 （式中、Ｒ１〜Ｒ４の少なくとも一つは独立に置換または非置換のＣ４〜Ｃ３１の線状または分枝状のアラルキル基であり、残りのＲ１〜Ｒ４はそれぞれ独立に水素あるいは置換または非置換のＣ１〜Ｃ３の線状または分枝状のアルキル基であり、ｎは２５０〜４００の整数を示す。） 【選択図】なし

Fine domain composite films of polyimide mixtures

Thin films of polyimide having electrical insulation, low thermal expansion, high glass transition temperature, and good ahesion are made by dispersing fine domains of relatively flexible polyimide which is fluorinated in a matrix of relatively rigid polyimide.

Integrated circuit device and process for its manufacture

The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.

Fine domain composite films of polyimide mixtures

Organic insulator, organic thin film transistor array panel including organic insulator, and manufacturing method therefor

An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula 2: R= R 1 R 2 R 3 )   (2), and R1, R2, and R3 in the Chemical Formula 2 are one selected from Chemical Formulae 3, 4 and 5, respectively (n is an integer):

ポリシルセスキオキサン共重合体、その製造方法、これを利用するポリシルセスキオキサン共重合体薄膜、及びこれを利用する有機電界発光表示装置

【課題】ポリシルセスキオキサン共重合体、その製造方法、これを利用するポリシルセスキオキサン共重合体薄膜、及びこれを利用する有機電界発光表示装置を提供。 【解決手段】アルコキシフェニルトリアルコキシシラン、アルコキシフェニルアルキルトリアルコキシシラン、アルコキシカルボニルフェニルトリアルコキシシラン及びアルコキシカルボニルフェニルアルキルトリアルコキシシランよりなる群から選択されたいずれか１つの単量体と、両端に反応サイトを有するα、ω−ビストリアルコキシシリル化合物単量体とを有機溶媒／水の混合溶媒の中で酸または塩基触媒を使用して共重合して製造されたポリシルセスキオキサン共重合体、その製造方法、これを利用したポリシルセスキオキサン共重合体薄膜、及びこれを利用した有機電界発光表示装置。 【選択図】なし

Poly(p-xylylene)-based polymer having low dielectric constant and low-loss property and insulating material, printed circuit board and functional element using the same

The present invention relates to a poly(p-xylylene)-based polymer having a low dielectric constant suitable for low loss dielectrics (LLD), and an insulating material, a printed circuit board and a functional element using the same. More particularly, the poly(p-xylylene)-based polymer includes at least one repeat unit expressed by the following formula (1): wherein, at least one of R1, R2, R7 and R8 is independently substituted or unsubstituted C6-C20 aryl; the rest of R1 to R8 are each and independently H, substituted or unsubstituted linear C1-C3 alkyl, or substituted or unsubstituted branched C1-C3 alkyl; and n is an integer of 400 to 900.

Process for forming a circuit assembly

低誘電率及び低損失特性を有するポリｐ−キシリレン系重合体ならびにこれを用いた絶縁材、印刷回路基板および機能性素子

【課題】低誘電率、低損失特性、及び優れた工程性を有する低損失絶縁材として有用である新規なポリｐ−キシリレン系重合体、及びこれを用いた絶縁材、印刷回路基板、機能性素子を提供する。 【解決手段】ポリｐ−キシリレン系重合体は、下記化学式（１）で表される繰り返し単位を少なくとも１種含むことを特徴とする。 （式中、Ｒ １ 、Ｒ ２ 、Ｒ ７ 、及びＲ ８ の少なくとも一つは独立に置換または非置換のＣ６−Ｃ２０のアリール基であり、ｎは４００〜９００の整数を示す。） 【選択図】図１

Poly(p-xylylene)-based polymer having low dielectric constant and low-loss property and insulating material, printed circuit board and functional element using the same

The present invention relates to a poly(p-xylylene)-based polymer having a low dielectric constant suitable for low loss dielectrics (LLD), and an insulating material, a printed circuit board and a functional element using the same. More particularly, the poly(p-xylylene)-based polymer includes at least one repeat unit expressed by the following formula (1): wherein, at least one of R1, R2, R7 and R8 is independently substituted or unsubstituted C6-C20 aryl; the rest of R1 to R8 are each and independently H, substituted or unsubstituted linear C1-C3 alkyl, or substituted or unsubstituted branched C1-C3 alkyl; and n is an integer of 400 to 900.