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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 11. Отображено 10.
15-08-2017 дата публикации

Negative ribbon ion beams from pulsed plasmas

Номер: US0009734991B2
Автор: Daniel Distaso, Svetlana B. Radovanov, Joseph P. Dzengeleski, DISTASO DANIEL, RADOVANOV SVETLANA B, DZENGELESKI JOSEPH P, Distaso Daniel, Radovanov Svetlana B., Dzengeleski Joseph P.
Принадлежит: Varian Semiconductor Equipment Associates, Inc., VARIAN SEMICONDUCTOR EQUIPMENT ASS INC

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

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Номер записи: 1
02-02-2017 дата публикации

Negative Ribbon Ion Beams from Pulsed Plasmas

Номер: US20170032937A1
Автор: Daniel Distaso, Svetlana B. Radovanov, Joseph P. Dzengeleski, DISTASO DANIEL, RADOVANOV SVETLANA B, DZENGELESKI JOSEPH P, Distaso Daniel, Radovanov Svetlana B., Dzengeleski Joseph P.
Принадлежит:

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period. 1. An apparatus for creating a negative ribbon ion beam , comprising:an ion source having a plurality of chamber walls defining an ion source chamber and having an extraction aperture;an RF antenna disposed proximate one of the plurality of chamber walls of the ion source chamber;an RF power supply in communication with the RF antenna, and outputting a first RF power level for a first time duration to the RF antenna to create a plasma within the ion source chamber from a feed gas and outputting a second RF power level, lower than the first RF power level, for a second time duration; anda bias power supply to create a voltage difference between a plasma disposed in the ion source chamber and a workpiece, such that the bias power supply is pulsed to create the voltage difference during at least a portion of the second time duration, so as to extract the negative ribbon ion beam from the ion source chamber through the extraction aperture.2. The apparatus of claim 1 , wherein at least one of the plurality of chamber walls is electrically conductive and the bias power supply is in communication with electrically conductive chamber walls of the ion source chamber ...

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Номер записи: 2
26-01-2012 дата публикации

SYSTEM AND METHOD FOR CONTROLLING PLASMA DEPOSITION UNIFORMITY

Номер: US20120021136A1
Автор: Dzengeleski Joseph P., Gammel George M., Miller Timothy J.
Принадлежит: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

A plasma process uniformity control apparatus comprises a plasma chamber defined by chamber walls and a plurality of magnetic elements disposed on the outside of the chamber walls. Each of the plurality of magnets is configured to supply a magnetic field directed at respective portions of the plasma inside the chamber to control the uniformity of the plasma directed toward the target substrate. 1. A process uniformity control apparatus comprising:a plasma chamber defined by chamber walls;a platen disposed within said plasma chamber for supporting a target substrate;a gas source coupled to said plasma chamber for supplying an process gas to said chamber,a power source connected to said chamber and configured to provide energy to ionize said process gas supplied to said chamber to form a plasma containing charged and non-charged species directed toward a surface of said target substrate; anda plurality of magnetic elements disposed in spaced relation on the outside of the chamber walls, each of said plurality of magnets configured to supply a magnetic field directed at respective portions of said plasma within said chamber to control the uniformity of said plasma directed toward said target substrate.2. The process uniformity control apparatus of further comprising an anode spaced from said platen in said plasma chamber claim 1 , said plasma being generated between said anode and said platen.3. The process uniformity control apparatus of further comprising a plurality of coils disposed around at least a portion of the chamber walls claim 2 , said coils and said corresponding chamber walls defining said anode.4. The process uniformity control apparatus of wherein said plurality of coils receive RF energy to ionize said process gas.5. The process uniformity control apparatus of wherein said platen is biased with a negative voltage to attract said charged and non-charged species toward said target substrate.6. The process uniformity control apparatus of wherein said ...

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Номер записи: 3
26-10-2017 дата публикации

Negative Ribbon Ion Beams from Pulsed Plasmas

Номер: US20170309454A1
Автор: Distaso Daniel, Dzengeleski Joseph P., Radovanov Svetlana B.
Принадлежит:

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period. 1. A method of extracting a negative ribbon ion beam from an ion source chamber at a particular angle , comprising:applying a first RF power level for a first time duration to a RF antenna proximate an ion source chamber to create a plasma within the ion source chamber from a feed gas and a second RF power level, lower than the first RF power level, for a second time duration, wherein the plasma cools during the second time duration to create an afterglow plasma in which a number of negative ions in the plasma increases;pulsing a bias voltage to attract negative ions from an ion source chamber, as a negative ribbon ion beam, through an extraction aperture during at least a portion of the second time duration; andusing extraction optics disposed between the extraction aperture and a workpiece to define a specific angle of incidence of the negative ribbon ion beam relative to a workpiece.2. The method of claim 1 , wherein the extraction optics comprises blockers claim 1 , electrodes claim 1 , triodes or tetrodes.3. The method of claim 1 , wherein the extraction optics also control an ion beam mean angle and angle spread of the negative ribbon ion beam.4. The ...

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Номер записи: 4
12-11-2015 дата публикации

Processing apparatus and method of treating a substrate

Номер: US20150325405A1
Автор: Ernest E. Allen, James P. Buonodono, Jon Ballou, Joseph P. Dzengeleski, Kevin M. Daniels
Принадлежит: Varian Semiconductor Equipment Associates Inc

A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.

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Номер записи: 5
24-06-2010 дата публикации

Method and apparatus for plasma dose measurement

Номер: US20100155600A1
Автор: Christopher J. Leavitt, Jay T. Scheuer, Joseph P Dzengeleski, Timothy J. Miler
Принадлежит: Varian Semiconductor Equipment Associates Inc

An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process.

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Номер записи: 6
07-08-2008 дата публикации

Magnetic monitoring of a faraday cup for an ion implanter

Номер: WO2008073734A3
Автор: Ashwin Shetty, Jay Thomas Scheuer, Joseph P Dzengeleski, Kenneth Swenson, Morgan D Evans
Принадлежит: Ashwin Shetty, Jay Thomas Scheuer, Joseph P Dzengeleski, Kenneth Swenson, Morgan D Evans, Varian Semiconductor Equipment

This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.

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Номер записи: 7
12-06-2008 дата публикации

Magnetic monitoring of a faraday cup for an ion implanter

Номер: US20080135776A1
Автор: Ashwin Shetty, Jay Scheuer, Joseph P. Dzengeleski, Kenneth Swenson, Morgan D. Evans
Принадлежит: Varian Semiconductor Equipment Associates Inc

This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.

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Номер записи: 8
16-09-2010 дата публикации

Plasma ion process uniformity monitor

Номер: WO2010075281A3
Автор: Bernard G. Lindsay, George M. Gammel, Joseph P. Dzengeleski, Vikram Singh
Принадлежит: Varian Semiconductor Equipment Associates

An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

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Номер записи: 9
01-07-2010 дата публикации

Plasma ion process uniformity monitor

Номер: WO2010075281A2
Автор: Bernard G. Lindsay, George M. Gammel, Joseph P. Dzengeleski, Vikram Singh
Принадлежит: Varian Semiconductor Equipment Associates

An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

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Номер записи: 10