Device and method for managing die groups

The embodiments described herein methods and devices that enhance the endurance of a non-volatile memory (e.g., flash memory). The method includes obtaining, for each of the plurality of die, an endurance metric. The method also includes sorting the plurality of die into a plurality of die groups based on their corresponding endurance metrics, where each die group includes one or more die and each die group is associated with a range of endurance metrics. In response to a write command specifying a set of write data, the method further includes writing the write data to the non-volatile memory by writing in parallel subsets of the write data to the one or more die assigned to a single die group of the plurality of die groups.

Storage control system with power-off time estimation mechanism and method of operation thereof

A storage control system, and a method of operation thereof, including: a power-down module for powering off a memory sub-system; a decay estimation module, coupled to the power-down module, for estimating a power-off decay rate upon the memory sub-system powered up, the power-off decay rate is for indicating how much data in the memory sub-system has decayed while the memory sub-system has been powered down; and a recycle module, coupled to the decay estimation module, for recycling an erase block for data retention based on the power-off decay rate.

Paired Metablocks in Non-Volatile Storage Device

Systems, methods and/or devices are used to pair metablocks in a non-volatile storage device. In one aspect, a method of data organization of a memory device includes, writing data to and reading data from respective metablocks in a set of metablocks. The method further includes while performing said writing and reading: (1) accessing one or more management data structures in controller memory, identifying two or more metablock pairs; (2) accessing and updating metablock status information indicating which metablocks of the set of metablocks are closed, free and open; and (3) accessing and updating a valid count, corresponding to a number of sub-block memory units having valid data for each of a plurality of metablocks in the set of metablocks. 1. A method of data organization of a memory device , the memory device comprising:a plurality of memory die, each memory die including a plurality of memory blocks, each memory block including a plurality of memory pages; anda set of metablocks, each metablock including a specified set of N memory blocks in N different memory die, where N is an integer greater than 2, and the set of metablocks include two or more metablock pairs, each metablock pair including a first metablock and a second metablock that share one or more individual memory blocks;the method comprising:writing data to and reading data from respective metablocks in the set of metablocks; accessing one or more management data structures in controller memory, distinct from the plurality of memory die, identifying two or more metablock pairs;', 'accessing and updating metablock status information indicating which metablocks of the set of metablocks are closed, free and open; and', 'accessing and updating a valid count, corresponding to a number of sub-block memory units having valid data, for each of a plurality of metablocks in the set of metablocks., 'while performing said writing and reading,'}2. The method of claim 1 , wherein the set of metablocks includes ...

DYNAMIC RECONDITIONING OF CHARGE TRAPPED BASED MEMORY

A storage device with a charge trapping (CT) based memory may include improved data retention (DR) performance. The CT memory may be 3D memory that uses a charge storage layer for storing charge may have unique data retention behavior. Memory blocks using a charge storage layer may be dynamically detected and reconditioned and re-programmed to improve memory characteristics, such as data retention. The reconditioning may include a dedicated erase cycle for a block that improves the data retention. 1. A method for refreshing charge trap flash memory , the method comprising:detecting a data retention voltage shift in a portion of the charge trap flash memory;relocating data stored at the detected portion of the charge trap flash memory;reconditioning the detected portion of the charge trap flash memory by performing an erase cycle of the portion of the charge trap flash memory; andreprogramming, after the reconditioning, the detected portion of the charge trap flash memory with the previously relocated data or new data.2. The method of wherein the charge trap flash memory comprises a dielectric layer for trapping electrons claim 1 , wherein the dielectric layer is a silicon nitride film.3. The method of wherein the charge trap flash memory comprises a metal oxide nitride oxide semiconductor (MONOS) capacitor structure.4. The method of wherein the charge trap flash memory comprises a three-dimensional (3D) NAND memory configuration claim 1 , and wherein a controller is associated with operation of and storing to the charge trap flash memory.5. The method of wherein the reconditioning improves data retention by resisting voltage distribution shifting during high temperature exposures.6. The method of wherein the relocating comprises copying the data to another portion of the memory that had no data and has not been subject to a data retention voltage shift and the reprogramming comprises copying the data from the another portion back to the detected portion of the ...

Adaptive erase of a storage device

The various implementations described herein include systems, methods and/or devices used to enable adaptive erasure in a storage device. The method includes performing a plurality of memory operations including read operations and respective erase operations on portions of one or more non-volatile memory devices specified by the read operations and respective erase operations, where the respective erase operations are performed using a first set of erase parameters that has been established as a current set of erase parameters prior to performing the respective erase operations. The method includes, in accordance with each erase operation of at least a subset of the respective erase operations, updating one or more erase statistics that correspond to performance of multiple erase operations. The method includes, in accordance with a comparison of the erase statistics with an erasure performance threshold, establishing a second set of erase parameters as the current set of erase parameters ...

Dynamic reconditioning of charge trapped based memory

A storage device with a charge trapping (CT) based memory may include improved data retention (DR) performance. The CT memory may be 3D memory that uses a charge storage layer for storing charge may have unique data retention behavior. Memory blocks using a charge storage layer may be dynamically detected and reconditioned and re-programmed to improve memory characteristics, such as data retention. The reconditioning may include a dedicated erase cycle for a block that improves the data retention.

Variable-Term Error Metrics Adjustment

Systems, methods and/or devices are used to adjust error metrics for a memory portion of non-volatile memory in a storage device. In one aspect, a first write and a first read are performed on the memory portion. In accordance with results of the first read, a first error metric value for the memory portion is determined. In accordance with a determination that the first error metric value exceeds a first threshold value, an entry for the memory portion is added to a table. After the first write, when a second write to the memory portion is performed, it is determined whether the entry for the memory portion is present in the table. In accordance with a determination that the entry for the memory portion is present in the table, the second write uses a first error adjustment characteristic that is determined in accordance with the first error metric value. 1. A method for adjusting error metrics for a memory portion of non-volatile memory in a storage device , the non-volatile memory of the storage device having a plurality of distinct memory portions , the method comprising:performing a first write to the memory portion;performing a first read on the memory portion;in accordance with results of the performed first read, determining a first error metric value for the memory portion;determining whether the first error metric value exceeds a first threshold value;in accordance with a determination that the first error metric value exceeds the first threshold value, adding an entry for the memory portion to an error adjustment characteristics table;determining, for a second write to the memory portion, whether an entry for the memory portion is present in the error adjustment characteristics table, wherein the second write occurs after the first write; andin accordance with a determination that the entry for the memory portion is present in the error adjustment characteristics table, performing the second write using a first error adjustment characteristic, wherein the ...

Device-Specific Variable Error Correction

The various implementations described herein include systems, methods and/or devices for encoding and decoding data for memory portions of non-volatile memory in a storage device. In one aspect, the method includes, for respective memory portions of the non-volatile memory, in accordance with an error correction format of the respective memory portion: encoding data to produce codewords; storing the codewords in the respective memory portion; and decoding the codewords to produce decoded data. Furthermore, each memory portion of the non-volatile memory has a corresponding error correction format corresponding to a code rate, a codeword structure, and an error correction type, and comprising one of a sequence of predefined error correction formats. A plurality of the predefined error correction formats have a same number of error correction bits and different numbers of data bits, where at least two memory portions have distinct error correction formats. 1. A method of encoding and decoding data for a plurality of distinct memory portions of non-volatile memory (NVM) in a storage device , the method comprising: encoding data to produce one or more codewords;', 'storing the one or more codewords in the respective memory portion; and', 'decoding the one or more codewords to produce decoded data corresponding to the one or more codewords, which includes detecting and correcting errors in the decoded data;, 'for each respective memory portion of the plurality of distinct memory portions of the NVM, in accordance with an error correction format of the respective memory portion each memory portion of the plurality of memory portions of the NVM has a corresponding error correction format,', 'the error correction format corresponding to a code rate, a codeword structure, and an error correction type, and', 'the error correction format comprising one of a sequence of three or more predefined error correction formats, wherein a plurality of the sequence of predefined error ...

Data storage system with dynamic erase block grouping mechanism and method of operation thereof

Systems, methods and/or devices are used to enable dynamic erase block grouping. In one aspect, the method includes (1) maintaining metadata for each erase block of a plurality of erase blocks in a data storage system, wherein a respective metadata for a respective erase block includes one or more characteristics of the respective erase block, (2) allocating a set of erase blocks, of the plurality of erase blocks, as unassociated erase blocks, (3) selecting two or more unassociated erase blocks in accordance with characteristics of the unassociated erase blocks so as to select unassociated erase blocks with similar characteristics, and (4) grouping the two or more unassociated erase blocks with similar characteristics to form a super block.

Data storage system with dynamic erase block grouping mechanism and method of operation thereof

Systems, methods and/or devices are used to enable dynamic erase block grouping. In one aspect, the method includes (1) maintaining metadata for each erase block of a plurality of erase blocks in a data storage system, wherein a respective metadata for a respective erase block includes one or more characteristics of the respective erase block, (2) allocating a set of erase blocks, of the plurality of erase blocks, as unassociated erase blocks, (3) selecting two or more unassociated erase blocks in accordance with characteristics of the unassociated erase blocks so as to select unassociated erase blocks with similar characteristics, and (4) grouping the two or more unassociated erase blocks with similar characteristics to form a super block.

Adaptive Operation of 3D NAND Memory

In a nonvolatile memory block that contains separately-selectable sets of NAND strings, a bit line current sensing unit is configured to sense bit line current for a separately-selectable set of NAND strings of the block. A bit line voltage adjustment unit is configured to apply a first and second bit line voltages to separately-selectable sets of NAND strings that have bit line currents greater and less than the minimum current respectively, the second bit line voltage being greater than the first bit line voltage.

Adaptive Operation of 3D Memory

A three dimensional nonvolatile memory system includes a sensing unit configured to sense bit line current and/or voltage for bit lines of a plurality of separately-selectable portions of a block and to compare respective results with a reference and an adjustment unit configured to individually modify operating parameters for one or more of the plurality of separately-selectable portions in response to the comparing of respective results with the reference. 1. A three dimensional nonvolatile memory system comprising:a three dimensional nonvolatile memory block that contains a plurality of separately-selectable portions, an individual separately-selectable portion containing a plurality of bit lines extending perpendicular to a substrate surface;a sensing unit configured to sense bit line current and/or voltage for bit lines of the plurality of separately-selectable portions of the block and to compare respective results of the sensing for individual separately-selectable portions with a reference; andan adjustment unit that is in communication with the sensing unit, the adjustment unit configured to individually modify operating parameters for one or more of the plurality of separately-selectable portions of the block in response to the comparing of respective results for the one or more of the plurality of separately-selectable portions of the block with the reference.2. The three dimensional nonvolatile memory system of wherein the three dimensional nonvolatile memory block and the sensing unit are located in a memory die and the adjustment unit is located in a controller die.3. The three dimensional nonvolatile memory of further comprising a plurality of global bit lines extending parallel to the substrate surface in a first direction claim 1 , wherein the plurality of bit lines are connected to the plurality of global bit lines by a plurality of select transistors.4. The three dimensional nonvolatile memory of further comprising a select line extending parallel ...

Method for modifying device-specific variable error correction settings

The various implementations described herein include systems, methods and/or devices for modifying an error correction format of a respective memory portion of non-volatile memory in a storage device. In one aspect, the method includes, for respective memory portions of the non-volatile memory, obtaining a performance metric of the respective memory portion, and modifying a current error correction format in accordance with the measured performance metric, the current error correction format corresponding to a code rate, codeword structure, and error correction type. Furthermore, data is stored, and errors are detected and corrected, in the respective memory portion in accordance with the modified error correction format. The current and modified error correction formats are distinct, and comprise two of a sequence of predefined error correction formats, wherein a plurality of the sequence of predefined error correction formats have a same number of error correction bits and different numbers ...

Method for Modifying Device-Specific Variable Error Correction Settings

The various implementations described herein include systems, methods and/or devices for modifying an error correction format of a respective memory portion of non-volatile memory in a storage device. In one aspect, the method includes, for respective memory portions of the non-volatile memory, obtaining a performance metric of the respective memory portion, and modifying a current error correction format in accordance with the measured performance metric, the current error correction format corresponding to a code rate, codeword structure, and error correction type. Furthermore, data is stored, and errors are detected and corrected, in the respective memory portion in accordance with the modified error correction format. The current and modified error correction formats are distinct, and comprise two of a sequence of predefined error correction formats, wherein a plurality of the sequence of predefined error correction formats have a same number of error correction bits and different numbers of data bits. 1. A method for modifying an error correction format of a respective memory portion of non-volatile memory (NVM) in a storage device , the NVM of the storage device having a plurality of distinct memory portions , the method comprising: obtaining a performance metric of the respective memory portion;', 'modifying a current error correction format of the respective memory portion in accordance with the obtained performance metric, wherein the current error correction format corresponds to a code rate, a codeword structure, and an error correction type;', 'storing data in the respective memory portion in accordance with the modified error correction format; and', the modified error correction format is distinct from the current error correction format, and', 'the modified error correction format and the current error correction format comprise two of a sequence of three or more predefined error correction formats, wherein a plurality of the sequence of predefined ...

Sub-block garbage collection

Systems, methods and/or devices are used to enable garbage collection of a sub-block of an individually erasable block of a storage medium in a storage device. In one aspect, the method includes determining a first trigger parameter in accordance with one or more operating conditions of a first sub-block of an erase block in the storage medium, and determining a second trigger parameter in accordance with one or more operating conditions of a second sub-block of the erase block in the storage medium. In accordance with a determination that the first trigger parameter meets a first vulnerability criterion, garbage collection of the first sub-block is enabled. Furthermore, in accordance with a determination that the second trigger parameter meets a second vulnerability criterion, garbage collection of the second sub-block is enabled.

Adaptive operation of 3D NAND memory

In a nonvolatile memory block that contains separately-selectable sets of NAND strings, a bit line current sensing unit is configured to sense bit line current for a separately-selectable set of NAND strings of the block. A bit line voltage adjustment unit is configured to apply a first and second bit line voltages to separately-selectable sets of NAND strings that have bit line currents greater and less than the minimum current respectively, the second bit line voltage being greater than the first bit line voltage.

Data Storage System with Dynamic Erase Block Grouping Mechanism and Method of Operation Thereof

Systems, methods and/or devices are used to enable dynamic erase block grouping. In one aspect, the method includes (1) maintaining metadata for each erase block of a plurality of erase blocks in a data storage system, wherein a respective metadata for a respective erase block includes one or more characteristics of the respective erase block, (2) allocating a set of erase blocks, of the plurality of erase blocks, as unassociated erase blocks, (3) selecting two or more unassociated erase blocks in accordance with characteristics of the unassociated erase blocks so as to select unassociated erase blocks with similar characteristics, and (4) grouping the two or more unassociated erase blocks with similar characteristics to form a super block. 1. A method of operation of a data storage system comprising:maintaining metadata for each erase block of a plurality of erase blocks in the data storage system, wherein a respective metadata for a respective erase block includes one or more characteristics of the respective erase block;allocating a set of erase blocks, of the plurality of erase blocks, as unassociated erase blocks;selecting two or more unassociated erase blocks in accordance with characteristics of the unassociated erase blocks so as to select unassociated erase blocks with similar characteristics;grouping the two or more selected erase blocks to form a super block;aggregating metadata from the two or more selected erase blocks grouped to form the super block; andstoring the aggregated metadata as metadata for the super block.2. The method of claim 1 , wherein the selecting includes enforcing a minimum amount of dwell time for the unassociated erase blocks claim 1 , wherein dwell time is the amount of time between operations on a respective erase block.3. The method of claim 1 , wherein the one or more characteristics of the respective erase block include at least one characteristic selected from the group consisting of age information claim 1 , wear statistics ...

Adaptive operation of 3D memory

A three dimensional nonvolatile memory system includes a sensing unit configured to sense bit line current and/or voltage for bit lines of a plurality of separately-selectable portions of a block and to compare respective results with a reference and an adjustment unit configured to individually modify operating parameters for one or more of the plurality of separately-selectable portions in response to the comparing of respective results with the reference.

Quenched Dendrimeric Dyes for Florescence Detection

The present invention presents designs for high extinction quenched “dyedrons” that can be activated by conversion of a single acceptor/quencher in the molecular assembly to a fluorescent state. The quencher is activated by noncovalent binding to a unique complementary expressible fluorogen activating peptide (FAP). In this way, the quencher serves as the homogeneous switch, receiving energy efficiently from each of the donor molecules of the dendronic antenna, and releasing it as fluorescence only when activated by binding. The sum of the extinction of the multiple dyes on the antenna will provide dramatic enhancements in the effective brightness of the probe in standard imaging systems. This approach provides a set of probes with exceptional brightness, specifically targeted to an expressed tag that activates the fluorescence of the dyedron. 1. A compound comprising two or more excitable donor moieties , linked to a single activatable acceptor moiety , wherein the donor moieties transfer at least 50% of their excitation energy to the acceptor moiety , and when activated , the acceptor moiety produces a detectable fluorescent signal when the donor moieties are excited.2. The compound of in which the donor moieties are dyes selected from the group consisting of: a cyanine dye claim 1 , a rhodamine dye claim 1 , a fluorescein dye claim 1 , an azo dye claim 1 , fluoresceins claim 1 , an umbelliferone claim 1 , a pyrenes claim 1 , a resorufin claim 1 , a rhodamine claim 1 , a hydroxy esters claim 1 , an aromatic acid claim 1 , a styryl dye claim 1 , a tetramethyl rhodamine dye claim 1 , an oxazine claim 1 , a thiazine claim 1 , a metal-substituted pthalocyanine claim 1 , a metal-substituted porphyrin claim 1 , a polycyclic aromatic dye claim 1 , and a perylenediimide.3. The compound of in which the donor moieties are a fluorescent dye.4. The compound of claim 1 , in which the donor moieties are a cyanine dye.5. The compound of claim 1 , in which the donor moieties are ...

TRASH COLLECTING DEVICE

The present invention is directed to a trash collecting device that includes a substantially circular piece having a sidewall surrounding an interior region, a surface extending from the sidewall towards the interior region, a handle and a first opening within the surface. The trash collecting device also includes a retaining ring dimensioned for nested engagement within the interior region of the substantially circular piece. The handle of the substantially circular piece may include a substantially cylindrical portion attached to the surface, and the handle may be positioned between the first opening and the sidewall. The trash collecting device is configured to securely hold a bag between the retaining ring and the substantially circular piece when at least a portion of the retaining ring is held within the interior region of the substantially circular piece. 1. A cover piece for a trash collecting device , the cover piece comprising:a sidewall defining an interior region of the cover piece;s a surface extending from the sidewall towards the interior region;a handle connected to the surface; and wherein the handle is positioned between the first opening and the sidewall; and', 'wherein the first opening comprises at least one extension of the first opening defining an open channel in the surface extending from the first opening towards the handle., 'a first opening within the surface;'}2. The cover piece according to claim 1 , wherein the cover piece is configured for removable attachment to a retaining ring;wherein the retaining ring is dimensioned to fit in a nested engagement within the interior region the cover piece; andwherein the cover piece is configured to securely hold at least a portion of a bag when the retaining ring is placed in the nested engagement within the interior region of the cover piece.3. The cover piece according to claim 2 , wherein the cover piece further comprises at least one protrusion extending from the sidewall towards the interior ...

ELECTRONIC SYSTEM WITH STORAGE MANAGEMENT MECHANISM AND METHOD OF OPERATION THEREOF

A method of operation of an electronic system includes: forming a superblock by organizing an erase block according to a wear attribute; detecting a trigger count of the wear attribute of the superblock; updating a metadata table with the trigger count; and triggering a recycling event of the superblock based on the metadata table. 1. A method of operation of an electronic system comprising:forming a superblock by organizing an erase block according to a wear attribute;detecting a trigger count of the wear attribute of the superblock;updating a metadata table with the trigger count; andtriggering a recycling event of the superblock based on the metadata table.2. The method as claimed in wherein detecting the trigger count of the wear attribute includes identifying a read count claim 1 , a write age claim 1 , a leakage claim 1 , or a combination thereof from the erase block of the superblock.3. The method as claimed in further comprising generating a condition table for storing the trigger count during a power down.4. The method as claimed in wherein triggering the recycling event based on the metadata table includes detecting the trigger count meeting or exceeding a recycle threshold.5. The method as claimed in further comprising:detecting a recycling event; andresetting the trigger count for the superblock based on the recycling event.6. A method of operation of an electronic system comprising:forming a superblock by organizing an erase block according to a wear attribute;detecting a trigger count of the wear attribute of the superblock;updating a metadata table with the trigger count;generating a condition table for storing the metadata table during a power down; andtriggering a recycling event of the superblock based on the metadata table.9. The method as claimed in wherein generating the condition table includes recording the trigger count from the metadata table.10. The method as claimed in further comprising:detecting a power up; andupdating the metadata table ...

NON-VOLATILE MEMORY MANAGEMENT SYSTEM WITH TIME MEASURE MECHANISM AND METHOD OF OPERATION THEREOF

A method of operation of a non-volatile memory management system includes: selecting a specific time period by a unit controller; establishing a first time pool having super blocks written during the specific time period; and promoting to a second time pool, the super blocks from the first time pool, at the lapse of the specific time period. 1. A method of operation of a non-volatile memory management system comprising:selecting a specific time period by a unit controller;establishing a first time pool having super blocks written during the specific time period; andpromoting to a second time pool, the super blocks from the first time pool, at the lapse of the specific time period.2. The method as claimed in further comprising:establishing a data retention recycling threshold for the super blocks; andcalculating an effective time of the super blocks by the unit controller including interrogating a threshold sensor.3. The method as claimed in further comprising establishing an Nth time pool in a non-volatile memory array for receiving the super blocks at the lapse of the specific time period.4. The method as claimed in wherein:establishing the first time pool includes grouping all of the super blocks written through a storage system interface during the specific time period; andpromoting to the second time pool, the super blocks from the first time pool, includes updating a contents of a system control random access memory for associating the super blocks from the first time pool to the second time pool at the lapse of the specific time period.5. The method as claimed in further comprising determining a third time pool for associating the super blocks from the second time pool at the lapse of the specific time period.6. A method of operation of a non-volatile memory management system comprising:selecting a specific time period by a unit controller;establishing a first time pool having super blocks written during the specific time period including generating an index ...

STORAGE CONTROL SYSTEM WITH WRITE AMPLIFICATION CONTROL MECHANISM AND METHOD OF OPERATION THEREOF

A method of operation of a storage control system includes: partitioning logical addresses into a number of subdrives, the logical addresses associated with a memory device; and monitoring a data write measure of one of the subdrives. 1. A method of operation of a storage control system comprising:partitioning logical addresses into a number of subdrives, the logical addresses associated with a memory device; andmonitoring a data write measure of one of the subdrives.2. The method as claimed in further comprising assigning one of the logical addresses towards a most-written subdrive claim 1 , the logical addresses are for writing by a host system.3. The method as claimed in further comprising assigning one of the logical addresses to a less-written subdrive when the one of the logical addresses is recycled.4. The method as claimed in further comprising calculating a subdrive over-provisioning capacity for one or more of the subdrives.5. The method as claimed in further comprising organizing a block of the one of the subdrives into a sparse pool based on a number of valid pages of the block.6. A method of operation of a storage control system comprising:partitioning logical addresses into a number of subdrives, the logical addresses associated with a memory device;monitoring a data write measure of one of the subdrives; andidentifying a recommended subdrive based on the data write measure.7. The method as claimed in further comprising assigning one of the logical addresses towards a most-written subdrive when write data is written to the one of the logical addresses claim 6 , the logical addresses are for writing by a host system.8. The method as claimed in further comprising assigning one of the logical addresses to a less-written subdrive when the one of the logical addresses is recycled.9. The method as claimed in further comprising calculating a subdrive over-provisioning capacity for one or more of the subdrives based on a subdrive logical capacity associated ...

NON-VOLATILE MEMORY MANAGEMENT SYSTEM WITH LOAD LEVELING AND METHOD OF OPERATION THEREOF

A method of operation of a non-volatile memory system includes: generating a test stimulus for a page in a memory array; measuring a test response from the page in the memory array based on the test stimulus; calculating a measured effective life of the page from the test response; and determining a use plan according to the measured effective life for accessing the page. 1. A method of operation of a non-volatile memory system comprising:generating a test stimulus for a page in a memory array;measuring a test response from the page in the memory array based on the test stimulus;calculating a measured effective life of the page from the test response; anddetermining a use plan according to the measured effective life for accessing the page.5. The method as claimed in wherein:generating the test stimulus includes processing an erase command;measuring the test response includes receiving an erase-response having an erase-duration for indicating an amount of time spent by the memory array to erase data content in the memory array; andcalculating the measured effective life includes calculating the measured effective life using an execution profile and the erase-duration.6. A method of operation of an entertainment system comprising:generating a test stimulus for a page, an erase block, or a combination thereof in a memory array;measuring a test response from the page, the erase block, or the combination thereof in the memory array based on the test stimulus;calculating a measured effective life of the page, the erase block, or the combination thereof from the test response;determining a use plan for balancing usage of the page, the erase block, or a combination thereof according to the measured effective life relative to the memory array; andmanaging the usage of the memory array according the use plan for performing wear-leveling.10. The method as claimed in wherein:generating the test stimulus includes processing a write command to the memory array;measuring the test ...

STORAGE CONTROL SYSTEM WITH FLASH CONFIGURATION AND METHOD OF OPERATION THEREOF

A storage control system and method of operation thereof includes: a memory circuit for accessing a configuration category; a configuration module, coupled to the memory circuit, for configuring the memory circuit with the configuration category; and an operation module, coupled to the configuration module, for controlling a performance characteristic of a memory device based on the configuration category. 1. A method of operation of a storage control system comprising:accessing a configuration category;configuring a memory circuit with the configuration category; andcontrolling a performance characteristic of a memory device based on the configuration category.2. The method as claimed in wherein controlling the performance characteristic includes manipulating a flash retention claim 1 , a flash endurance claim 1 , a flash speed claim 1 , or a combination thereof3. The method as claimed in wherein accessing the configuration category includes accessing an endurance category for increasing a flash endurance.4. The method as claimed in wherein accessing the configuration category includes accessing a speed category for increasing a flash speed.5. The method as claimed in wherein accessing the configuration category includes accessing an archive category for increasing a flash retention.6. A method of operation of storage control system comprising:programming a performance instruction having a configuration category;operating a volatile register based on the configuration category;configuring a memory circuit with the configuration category; andcontrolling a performance characteristic of the memory device based on the configuration category.7. The method as claimed in wherein:configuring the memory circuit includes configuring the memory circuit with a cell-operation category; andcontrolling the performance characteristic includes changing a multi-level cell operation to a single level cell operation.8. The method as claimed in wherein:configuring the memory circuit ...

SEQUENCING CONTENT

Several implementations provide a system for sequencing, or cueing, content for presentation to an audience. One such implementation provides a low bit-rate system for use with, for example, a tablet. One particular implementation constructs a display plane including a first content source window indicating content from a first content source, and a timeline for sequencing the first content source into a presentation for a presentation device. The display plane is provided to a remote device, and command information is received from the remote device. The command information is for modifying the display plane. The display plane is modified based on the received command information. Another particular implementation receives the display plane, determines command information for modifying the display plane, and provides the command information to the remote device for modifying the display plane. 127-. (canceled)28. A method comprising:receiving a display plane, the display plane including a first content source window indicating content from a first content source, and a timeline that indicates particular content that is scheduled to be presented on a presentation device, the timeline allowing for sequencing the first content source into a presentation for the presentation device;determining command information for modifying the timeline to include content from the first content source while still retaining some of the particular content in the timeline; andproviding the command information to a remote device for modifying the display plane.29. The method of wherein the received display plane comprises an encoded display plane.30. The method of further comprising encoding the command information claim 28 , and wherein providing the command information comprises providing the encoded command information.31. The method of wherein encoding the command information comprises encoding the command information into a low bit rate format compared to the content.32. The method ...

Hygienic Medical Devices Having Hydrophilic Coatings and Methods of Forming the Same

Hygienic Hydrophilic coatings, hydrophilic coating formulations and wetting fluids that include an anti-infective agent. 1. A lubricous hydrophilic catheter assembly , comprising:a gas impermeable and liquid impermeable package having a sealed cavity;a catheter having a hydrophilic coating located within the sealed cavity; anda wetting fluid comprising a wetting agent and mannose located within the sealed cavity.2. The catheter assembly of claim 1 , wherein the wetting fluid further includes a peroxide generating enzyme.3. The catheter assembly of claim 2 , wherein the enzyme comprises an oxidoreductase.4. The catheter assembly of claim 2 , wherein the enzyme comprises glucose oxidase.5. The catheter assembly of claim 2 , wherein the enzyme comprises peroxidase.6. The catheter assembly of wherein the peroxidase comprises lactoperoxidase.7. The catheter assembly of claim 1 , wherein the hydrophilic coating comprises a hydrophilic polymer matrix.8. The catheter assembly of claim 7 , wherein a hydrophilic polymer of the hydrophilic polymer matrix comprises polyvinylpyrrolidone.9. The catheter assembly of claim 1 , wherein the hydrophilic coating further comprises an antioxidant.10. The catheter assembly of wherein the hydrophilic coating further comprises a thixotropic agent.11. The catheter assembly of wherein the thixotropic agent comprises pectin claim 10 , agar and/or alginate.12. The catheter assembly of wherein the wetting fluid further comprises sugar alcohol.13. The catheter assembly of claim 12 , wherein the sugar alcohol is xylitol.14. The catheter assembly of wherein the hydrophilic coating or wetting fluid further comprises an organic acid.15. A method of forming a lubricous hydrophilic catheter assembly claim 1 , comprising:inserting a catheter having a hydrophilic coating into a gas impermeable and liquid impermeable package having a cavity;placing a wetting fluid comprising a wetting agent and mannose into the cavity; andsealing the cavity.16. The method ...

Search for an Optimized Read Voltage

A memory device to search for a voltage optimized to read a group of memory cells. In response to a read command, the memory device measures first signal and noise characteristics of the memory cells by reading the memory cells at first test voltages. Based on the first signal and noise characteristics, the memory device may determine that the optimized read voltage is outside of a range of the first test voltages. In response, the memory device determines, based on the first signal and noise characteristics, an estimate of the optimized read voltage, and measures second signal and noise characteristics by reading at second test voltages configured around the estimate. The optimized read voltage can be computed based at least in part on the second signal and noise characteristics. The memory device retrieves data from the memory cells using the optimized read voltage. 1. A memory device , comprising:an integrated circuit package enclosing the memory device; anda plurality of groups of memory cells formed on at least one integrated circuit die; measure a first set of signal and noise characteristics of the group of memory cells by reading the group of memory cells at a first plurality of test voltages;', 'determine, based on the first set of signal and noise characteristics, whether an optimized read voltage is within a range of the first plurality of test voltages; and', determine, based on the first set of signal and noise characteristics, an estimate of the optimized read voltage;', 'measure a second set of signal and noise characteristics of the group of memory cells by reading the group of memory cells at a second plurality of test voltages configured according to the estimate of the optimized read voltage;', 'compute the optimized read voltage based at least in part on the second set of signal and noise characteristics; and', 'execute the command by retrieving data from the group of memory cells using the optimized read voltage., 'in response to a determination ...

Determine Optimized Read Voltage via Identification of Distribution Shape of Signal and Noise Characteristics

A memory device to determine a voltage optimized to read a group of memory cells. In response to a command, the memory device reads the group of memory cells at a plurality of test voltages to determine a set of signal and noise characteristics of the group of memory cells. The memory device determines or recognizes a shape of a distribution of the signal and noise characteristics over the plurality of test voltages. Based on the shape, the memory device selects an operation in determining an optimized read voltage of the group of memory cells. 1. A memory device , comprising:an integrated circuit package enclosing the memory device; anda plurality of groups of memory cells formed on at least one integrated circuit die; determine a set of signal and noise characteristics of the group of memory cells from a result of reading the group of memory cells at the plurality of test voltages;', 'recognize a shape of a distribution of the signal and noise characteristics over the plurality of test voltages;', 'select, based on the shape, an operation to determine an optimized read voltage of the group of memory cells; and', 'perform the operation in determination of the optimized read voltage., 'wherein in response to a command identifying a group of memory cells within the plurality of groups, the memory device is configured to, read the group of memory cells at a plurality of test voltages;'}2. The memory device of claim 1 , wherein the set of signal and noise characteristics identifies a distribution of count difference over the plurality of test voltages according to bit counts on the test voltages respectively; wherein each respective bit count at a test voltage identifies a number of memory cells in the group that claim 1 , when read at the test voltage claim 1 , provide a predetermined bit value; and wherein each respective count difference between two adjacent test voltages represents a difference between bit counts at the adjacent test voltages respectively.3. The ...

Coarse Calibration based on Signal and Noise Characteristics of Memory Cells Collected in Prior Calibration Operations

A memory device to perform a calibration of read voltages of a group of memory cells. For example, the memory device can measure signal and noise characteristics of a group of memory cells to determine an optimized read voltage of the group of memory cells and determine an amount of accumulated storage charge loss in the group of memory cells. Subsequently, the memory device can perform a read voltage calibration based on the determined amount of accumulated storage charge loss and a look up table.

Iterative Read Calibration Enhanced according to Patterns of Shifts in Read Voltages

A memory sub-system configured to use first values of a plurality of optimized read voltages to perform a first read calibration, which determines second values of the plurality of optimized read voltages. A plurality of shifts, from the first values to the second values respectively, can be computed for the plurality of optimized read voltages respectively. After recognizing a pattern in the plurality of shifts that are computed for the plurality of voltages respectively, the memory sub-system can control and/or initiate a second read calibration based on the recognized pattern in the shifts. 1. A device , comprising:a plurality of memory cells programmable to have threshold voltages in a plurality of voltage regions to represent data stored in the plurality of memory cells;a calibration circuit configured to apply a test voltage to the plurality of memory cells and detect whether each memory cell, among the plurality of memory cells, has a threshold voltage below the test voltage; and determine, based on first test voltages applied in a first voltage region among the plurality of voltage regions, a first shift of a threshold voltage of the plurality of memory cells in the first voltage region;', 'predict, based on the first shift, a second shift of a threshold voltage of the plurality of memory cells in a second voltage region among the plurality of voltage regions; and', 'instruct, based on the second shift, the calibration circuit to apply second test voltages in the second voltage region., 'a logic circuit configured to2. The device of claim 1 , wherein the logic circuit is further configured to:determine, based on test voltages applied to the plurality of memory cells, a plurality of shifts of threshold voltages within a portion of the plurality of voltage regions, the plurality of shifts including the first shift; andidentify a pattern in the plurality of shifts, wherein the second shift is predicted based on the pattern.3. The device of claim 2 , wherein the ...

Track Charge Loss based on Signal and Noise Characteristics of Memory Cells Collected in Calibration Operations

A memory sub-system to track charge loss in memory cells and shifts of voltages optimized to read the memory cells. For example, a memory device can measure signal and noise characteristics of a group of memory cells to calculate an optimized read voltage of the group of memory cells. The memory sub-system having the memory device can determine an amount of charge loss in the group of memory cells, using at least the signal and noise characteristics, the optimized read voltage, and/or the bit error rate of data read using the optimized read voltage. The memory sub-system tracks changes in optimized read voltages of memory cells in the memory device based on the amount of charge loss. 1. A method , comprising:measuring signal and noise characteristics of a group of memory cells in a memory device;calculating an optimized read voltage of the group of memory cells from the signal and noise characteristics;identifying a bit error rate in data read from the group of memory cells using the optimized read voltage;determining an amount of charge loss in the group of memory cells based at least in part on the signal and noise characteristics and the bit error rate; andtracking changes in optimized read voltages of memory cells in the memory device based on the amount of charge loss.2. The method of claim 1 , wherein the signal and noise characteristics identify a distribution of count difference over the plurality of test voltages according to bit counts on the test voltages respectively; wherein each respective bit count at a test voltage identifies a number of memory cells in the group that claim 1 , when read at the test voltage claim 1 , provide a predetermined bit value; and wherein each respective count difference between two adjacent test voltages represents a difference between bit counts at the adjacent test voltages respectively.3. The method of claim 2 , wherein the optimized read voltage is calculated from the distribution of count difference over the plurality ...

Read Model of Memory Cells using Information Generated during Read Operations

A memory sub-system configured to generate or update a model for reading memory cells in a memory device. For example, in response to a processing device of a memory sub-system transmitting to a memory device read commands that are configured to instruct the memory device to retrieve data from a group of memory cells formed on an integrated circuit die in the memory device, the memory device may measure signal and noise characteristics of the group of memory cells during execution of the read commands. Based on the signal and noise characteristics the memory sub-system can generate or update, measured during the execution of the read commands a model of changes relevant to reading data from the group of memory cells. The changes can be a result of damage, charge loss, read disturb, cross-temperature effect, etc. 1. A device , comprising:an integrated circuit die;memory cells formed on the integrated circuit die; and measure signal and noise characteristics of a memory cell group, among the memory cells, to calibrate read voltages of the memory cell group; and', 'generate, based at least in part on the signal and noise characteristics of the memory cell group, a model of changes of the group of memory cells., 'a logic circuit configured to, in response to commands to read data from the memory cells,'}2. The device of claim 1 , comprising:a calibration circuit configured to apply test voltages to the memory cell group to measure the signal and noise characteristics of the memory cell group.3. The device of claim 2 , wherein the logic circuit is configured to generate the model by updating a prior model.4. The device of claim 2 , wherein the logic circuit is configured to generate the model based on a history of the changes reflected at least in part in the signal and noise characteristics of the memory cell group measured during execution of the commands configured to read data from the memory cell groups.5. The device of claim 4 , wherein the logic circuit is ...

DATA STORAGE SYSTEM WITH DYNAMIC READ THRESHOLD MECHANISM AND METHOD OF OPERATION THEREOF

A system and method of operation of a data storage system includes: a memory die for determining a middle read threshold; a control unit, coupled to the memory die, for calculating a lower read threshold and an upper read threshold based on the middle read threshold and a memory element age; and a memory interface, coupled to the memory die, for reading a memory page of the memory die using the lower read threshold, the middle read threshold, or the upper read threshold for compensating for a charge variation. 1. A method of operation of a data storage system comprising:determining a middle read threshold for a memory die;calculating a lower read threshold and an upper read threshold based on the middle read threshold and a memory element age; andreading a memory page of the memory die using the lower read threshold, the middle read threshold, or the upper read threshold for compensating for a charge variation.2. The method as claimed in further comprising:retrieving a die read threshold from a controller database;calculating an outlier block offset for an outlier block based on the location of the outlier block; andmodifying the lower read threshold, the middle read threshold, and the upper read threshold with the outlier block offset.3. The method as claimed in further comprising:retrieving a die read threshold from a controller database;calculating an outlier page offset for an outlier page based on the location of the outlier page; andmodifying the lower read threshold, the middle read threshold, and the upper read threshold with the outlier page offset.4. The method as claimed in further comprising modifying the lower read threshold claim 1 , the middle read threshold claim 1 , and the upper read threshold based on a retention time.5. The method as claimed in further comprising modifying the lower read threshold claim 1 , the middle read threshold claim 1 , and the upper read threshold based on a read disturb count.6. A method of operation of a data storage ...

Data Storage System with Dynamic Erase Block Grouping Mechanism and Method of Operation Thereof

Systems, methods and/or devices are used to enable dynamic erase block grouping. In one aspect, the method includes (1) maintaining metadata for each erase block of a plurality of erase blocks in a data storage system, wherein a respective metadata for a respective erase block includes one or more characteristics of the respective erase block, (2) allocating a set of erase blocks, of the plurality of erase blocks, as unassociated erase blocks, (3) selecting two or more unassociated erase blocks in accordance with characteristics of the unassociated erase blocks so as to select unassociated erase blocks with similar characteristics, and (4) grouping the two or more unassociated erase blocks with similar characteristics to form a super block.

Electronic System with Storage Drive Life Estimation Mechanism and Method of Operation Thereof

Systems, methods and/or devices are used to enable storage drive life estimation. In one aspect, the method includes (1) determining two or more age criteria of a storage drive, and (2) determining a drive age of the storage drive in accordance with the two or more age criteria of the storage drive. 1. A method of operation of an electronic system comprising:determining two or more age criteria of a storage drive; anddetermining a drive age of the storage drive in accordance with the two or more age criteria of the storage drive.2. The method of claim 1 , wherein the two or more age criteria include at least one criterion selected from the group consisting of a total number of accumulated program/erase (PE) cycles claim 1 , a total number of grown defects claim 1 , a defect rate claim 1 , and a retry rate.3. The method of claim 1 , wherein the two or more age criteria are scaled by respective configurable factors to adjust relative importance of each respective age criterion on the drive age of the storage drive.4. The method of claim 3 , wherein determining a drive age of the storage drive in accordance with the two or more age criteria of the storage drive includes:determining a first scaled age criterion by multiplying a first configurable factor by a first age criterion of the two or more age criteria;determining a first drive age indicator by multiplying the drive age by a first maximum age criterion for the storage drive, wherein the first maximum age criterion is a maximum value of the first age criterion;determining whether the first scaled age criterion is greater than or equal to the first drive age indicator;in accordance with a determination that the first scaled age criterion is greater than or equal to the first drive age indicator, incrementing the drive age; and determining a second scaled age criterion by multiplying a second configurable factor by a second age criterion of the two or more age criteria;', 'determining a second drive age indicator by ...

Storage Control System with Settings Adjustment Mechanism and Method of Operation Thereof

Systems, methods and/or devices are used to enable a settings adjustment mechanism. In one aspect, the method includes (1) accessing characterization information corresponding to how a group of non-volatile memory devices of a storage control system operates as the group wears, (2) determining an estimated age of a non-volatile memory device, of the group of non-volatile memory devices, in accordance with a wear indicator for the non-volatile memory device, and (3) determining one or more settings for the non-volatile memory device in accordance with the estimated age and the characterization information. 1. A method of operation of a storage control system comprising:accessing characterization information corresponding to how a group of non-volatile memory devices of the storage control system operates as the group wears;determining an estimated age of a non-volatile memory device, of the group of non-volatile memory devices, in accordance with a wear indicator for the non-volatile memory device; anddetermining one or more settings for the non-volatile memory device in accordance with the estimated age and the characterization information.2. The method of claim 1 , further comprising:using the determined one or more settings for the non-volatile memory device to adjust operating characteristics of the non-volatile memory device.3. The method of claim 1 , wherein the characterization information identifies different settings to use for different ages of a respective non-volatile memory device of the group of non-volatile memory devices.4. The method of claim 1 , wherein the estimated age represents the estimated wear on the non-volatile memory device.5. The method of claim 1 , wherein the one or more settings for the non-volatile memory device are determined in accordance with the estimated age and the characterization information to promote even performance as the non-volatile memory device ages.6. The method of claim 1 , wherein the one or more settings for the ...

Catheter Assemblies Having A Protective Lubricious Sleeve

A catheter assembly includes a protective tip defining an interior chamber between its proximal and distal ends. A protective lubricious sleeve is positioned within the interior chamber. A catheter of the assembly is configured to be advanced proximally into and through the interior chamber to position at least a portion of the catheter within the protective sleeve, with the protective sleeve being retained upon the catheter as at least a proximal portion of the catheter exits the proximal end of the protective tip and is advanced through a body lumen. A second sleeve may be associated with the protective tip and configured to extend distally from the protective tip to remain outside of the body lumen during use and receive a more distal portion of the catheter. 1. A catheter assembly kit , comprising:a protective tip defining an interior chamber between proximal and distal ends of the protective tip;a protective lubricious sleeve positioned within the interior chamber; anda catheter configured to be advanced proximally into and through the interior chamber to position at least a portion of the catheter within the protective sleeve, with the protective sleeve being retained upon the catheter as at least a proximal portion of the catheter exits the proximal end of the protective tip.2. The catheter assembly kit of claim 1 , wherein the distal end of the protective tip is defined by an insert defining a distal opening configured to allow proximal advancement of the catheter into the interior chamber claim 1 , with a distal end of the sleeve secured to the insert and the distal opening in communication with an interior of the sleeve.3. The catheter assembly kit of claim 2 , wherein the insert includes a generally tubular alignment barrel surrounding the distal opening and positioned within the interior chamber and within the interior of the sleeve.4. (canceled)5. The catheter assembly kit of claim 3 , further comprising a distal sleeve claim 3 , whereinat least a ...

MOLDABLE COMPOSITIONS AND METHODS OF USING THE SAME

The present invention provides moldable compositions that are capable of drying and hardening if left in open air at room temperature for a period of time. Embodiments of the moldable compositions comprise water, at least one polar polymeric resin (e.g., polyvinyl alcohol), at least one thickening agent (e.g., boric acid, borate salt, or hydrate of a borate salt), at least one humectant (e.g., glycerin, propylene glycol, etc.), at least one filler (e.g., corn starch, tapioca, or arrowroot), optionally at least one releasing agent (e.g., mineral oil) and optionally at least one additive. 1. A moldable composition comprising water , at least one polar polymeric resin , at least one thickening agent , at least one humectant , at least one filler , optionally at least one releasing agent and optionally at least one additive.2. The moldable composition of claim 1 , wherein the at least one polar polymeric resin comprises polyvinyl alcohol.3. The moldable composition of claim 1 , wherein the at least one thickening agent comprises boric acid claim 1 , a borate salt claim 1 , or a hydrate of a borate salt.4. The moldable composition of claim 1 , wherein the at least one humectant comprises glycerin and polyethylene glycol.5. The moldable composition of any of claim 1 , wherein the at least one filler comprises corn starch.6. The moldable composition of claim 1 , wherein the at least one releasing agent comprises mineral oil.7. The moldable composition of claim 1 , wherein the moldable composition comprises at least one additive selected from the group consisting of pH adjusters claim 1 , defoamers claim 1 , dispersants claim 1 , preservatives claim 1 , colorants and scents.8. The moldable composition of comprising between about 15 wt % to about 60 wt % water claim 1 , between about 1 wt % to about 20 wt % humectant claim 1 , between about 0.1 wt % to about 10 wt % polyvinyl alcohol claim 1 , between about 0.01 wt % to about 5 wt % thickening agent(s) claim 1 , between ...

Adaptive and/or Iterative Operations in Executing a Read Command to Retrieve Data from Memory Cells

A memory sub-system configured to adaptively and/or iteratively determine sub-operations of executing a read command to retrieve data from memory cells. For example, after receiving the read command from a processing device of a memory sub-system, a memory device starts an atomic operation of executing the read command in the memory device. The memory device can have one or more groups of memory cells formed on an integrated circuit die and a calibration circuit configured to measure signal and noise characteristics of memory cells in the memory device. During the atomic operation, the calibration circuit generates outputs, based on which a read manager of the memory sub-system identifies sub-operations to be performed in the atomic operation and/or decides to end the atomic operation. 1. A device , comprising:memory cells;a calibration circuit; and{'claim-text': ['measure, using the calibration circuit, first signal and noise characteristics of the memory cells; and', 'determine, based on the first signal and noise characteristics, whether to measure second signal and noise characteristics of the memory cells.'], '#text': 'a logic circuit coupled to the memory cells and the calibration circuit and configured to, in response to a read command:'}2. The device of claim 1 , wherein the logic circuit is further configured to identify claim 1 , based on the first signal and noise characteristics claim 1 , a sub-operation to be performed for the read command.3. The device of claim 1 , wherein the logic circuit is further configured to determine claim 1 , iteratively claim 1 , whether to measure further signal and noise characteristics of the memory cells based on a current measurement of signal and noise characteristics of the memory cells.4. The device of claim 1 , wherein the logic circuit is further configured to:calculate a first read voltage from the first signal and noise characteristics; anddetermine, based on the first signal and noise characteristics, whether to ...

Search for an Optimized Read Voltage

A memory device to search for a voltage optimized to read a group of memory cells. In response to a read command, the memory device measures first signal and noise characteristics of the memory cells by reading the memory cells at first test voltages. Based on the first signal and noise characteristics, the memory device may determine that the optimized read voltage is outside of a range of the first test voltages. In response, the memory device determines, based on the first signal and noise characteristics, an estimate of the optimized read voltage, and measures second signal and noise characteristics by reading at second test voltages configured around the estimate. The optimized read voltage can be computed based at least in part on the second signal and noise characteristics. The memory device retrieves data from the memory cells using the optimized read voltage. 1. A device , comprising:memory cells;a calibration circuit; and receive first data representative of first signal and noise characteristics of the memory cells read at first test voltages;', 'determine that an optimized read voltage is outside of a range of the first test voltages;', 'compute, based on the first signal and noise characteristics, an estimate of the optimized read voltage; and', 'instruct the calibration circuit to measure, according to the estimate, second signal and noise characteristics of the memory cells., 'a logic circuit coupled to the memory cells and the calibration circuit and configured to2. The device of claim 1 , further comprising:an integrated circuit package configured to enclose the memory cells, the calibration circuits and the logic circuit;wherein the logic circuit is further configured to measure, using the calibration circuit, the first signal and noise characteristics.3. The device of claim 2 , wherein the calibration circuit is configured to apply at least a subset of the first test voltages to the memory cells via boost modulation to measure the first signal and ...

Read Disturb Mitigation based on Signal and Noise Characteristics of Memory Cells Collected for Read Calibration

A memory device to perform a read disturb mitigation operation. For example, the memory device can measure signal and noise characteristics of a group of memory cells to determine an optimized read voltage of the group of memory cells and determine a margin of read disturb accumulated in the group of memory cells. Subsequently, the memory device can identify the group of memory cells for the read disturb mitigation operation based on the margin of read disturb and a predetermined threshold. 1. A device , comprising:memory cells having voltage thresholds programmable to represent data stored in the memory cells; anda logic circuit configured to determine, based on signal and noise characteristics of the memory cells, a voltage to read the memory cells and a margin of read disturb in the memory cells.2. The device of claim 1 , wherein the logic circuit is further configured to perform an operation to mitigate read disturb based on the margin of read disturb in the memory cells.3. The device of claim 2 , further comprising:an integrated circuit package configured to enclose the memory cells and the logic circuit.4. The device of claim 3 , further comprising:a calibration circuit configured to measured the signal and noise characteristics based on a plurality of counts determined at a plurality of test voltages respectively, wherein each respective count at a corresponding test voltage is, among the memory cells, a number of first memory cells that have a predetermined bit value when read at the corresponding test voltage.5. The device of claim 3 , wherein the logic circuit is configured to calculate the voltage to read the memory cells from a distribution of count difference over a plurality of test voltages claim 3 , wherein a count difference between two adjacent test voltages is a difference between a first count of a subset of the memory cells having a predetermined state when subjected to a first one of the adjacent test voltages and a second count of a subset of ...

Optimization of Soft Bit Windows based on Signal and Noise Characteristics of Memory Cells

A memory device to determine a voltage window to read soft bit data. For example, in response to a read command, the memory device can read a group of memory cells at a plurality of test voltages to determine signal and noise characteristics, which can be used to determine an optimized read voltage for reading hard bit data and a voltage window between a first voltage and a second voltage for reading soft bit data. The soft bit data identifies exclusive or (XOR) of results read from the group of memory cells at the first voltage and at the second voltage respective. The memory device can provide a response to the read command based on the hard bit data and the soft bit data.

Track Charge Loss based on Signal and Noise Characteristics of Memory Cells Collected in Calibration Operations

A memory sub-system to track charge loss in memory cells and shifts of voltages optimized to read the memory cells. For example, a memory device can measure signal and noise characteristics of a group of memory cells to calculate an optimized read voltage of the group of memory cells. The memory sub-system having the memory device can determine an amount of charge loss in the group of memory cells, using at least the signal and noise characteristics, the optimized read voltage, and/or the bit error rate of data read using the optimized read voltage. The memory sub-system tracks changes in optimized read voltages of memory cells in the memory device based on the amount of charge loss. 1. A device , comprising:memory cells; and{'claim-text': ['receive data representative of signal and noise characteristics of the memory cells;', 'determine, based on the signal and noise characteristics, a read voltage to read the memory cells; and', 'calculate, based at least in part on the signal and noise characteristics, an amount of charge loss in the memory cells.'], '#text': 'a logic circuit configured to:'}2. The device of claim 1 , further comprising:a read circuit configured to apply voltages to the memory cells to determine states of the memory cells under the voltages applied to the memory cells; andan integrated circuit package configured to enclose the memory cells, the logic circuit, and the read circuit.3. The device of claim 2 , wherein the logic circuit is further configured to:measure, using the read circuit, the signal and noise characteristics of the memory cells; anddetermine, based on the signal and noise characteristics, a bit error rate in data retrievable from the memory cells using the read voltage, wherein the amount of charge loss is determined based at least in part on the bit error rate.4. The device of claim 3 , wherein the logic circuit is further configured to track the read voltage in relation with the amount of charge loss.5. The device of claim 3 , ...

Urinary Catheters Having Limited Reusability

A reusable urinary catheter assembly includes a catheter shaft and a plurality of removable members associated with the catheter shaft. A different one of the removable members is configured to be removed from the catheter shaft between each consecutive use of the reusable urinary catheter assembly. By such a configuration, the number of times that the reusable urinary catheter may be reused is limited by the number of removable members.

ADVANCED STATIONARY SEALING COOLED CROSS-SECTION FOR AXIAL RETENTION OF CERAMIC MATRIX COMPOSITE SHROUDS

In one aspect, the present subject matter is directed to a gas turbine sealing assembly that includes a first static gas turbine wall and a second static gas turbine wall. A seal is disposed between the first static gas turbine wall and the second static gas turbine wall. The seal includes a first seal layer defining a first seal layer aperture extending therethrough. A second seal layer defines an elongated slot extending therethrough. The elongated slot includes a first end and a second end. A third seal layer defines a third seal layer aperture extending therethrough. The second seal layer is positioned between the first seal layer and the third seal layer such that the first seal layer aperture is in fluid communication with the first end and the third seal layer aperture is in fluid communication with the second end. 1. A gas turbine sealing assembly , comprising:a first static gas turbine wall;a second static gas turbine wall; and a first seal layer defining a first seal layer aperture extending through the first seal layer;', 'a second seal layer defining an elongated slot extending through the second seal layer; and', 'a third seal layer defining a third seal layer aperture extending through the third seal layer, wherein the second seal layer is positioned between the first seal layer and the third seal layer such that the first seal layer aperture is in fluid communication with a first position in the elongated slot and the third seal layer aperture is in fluid communication with a second position in the elongated slot., 'a seal disposed between the first static gas turbine wall and the second static gas turbine wall, the seal comprising2. The gas turbine sealing assembly of claim 1 , wherein the first static gas turbine wall comprises a turbine shroud assembly mount and the second gas static gas turbine wall comprises a stator vane assembly mount.3. The gas turbine sealing assembly of claim 1 , wherein the first seal layer claim 1 , the second seal layer ...

CERAMIC MATRIX COMPOSITE RING SHROUD RETENTION METHODS-FINGER SEALS WITH STEPPED SHROUD INTERFACE

The present disclosure is directed to a retention assembly for a gas turbine component including a first and a second gas turbine wall respectively defining a first and a second surface. A retainer, positioned between the first and the second surfaces, includes a flange, which contacts the first surface. A plurality of fingers extends outwardly from the flange. A first finger portion extends away from the first turbine wall toward the second wall. A second finger portion connected to the first finger portion extends substantially parallel to the flange. The second finger portion of a first finger of the plurality of fingers is positioned in a first slot defined in the second surface. The second finger portion of a second finger of the plurality of fingers adjacent to the first finger is positioned on the second surface adjacent to the first slot. 1. A retention assembly for a stationary gas turbine component , comprising:a first stationary gas turbine wall comprising a first surface;a second stationary gas turbine wall comprising a second surface and defining at least one slot in the second surface; and a flange in contact with the first surface; and', a first finger portion extending away from the first stationary gas turbine wall toward the second stationary gas turbine wall; and', 'a second finger portion integrally connected to the first finger portion and extending substantially parallel to the flange;, 'a plurality of parallel fingers extending outwardly from the flange, each of the plurality of parallel fingers comprising, 'wherein the second finger portion of a first finger of the plurality of parallel fingers is positioned in a first slot of the at least one slot and the second finger portion of a second finger of the plurality of parallel fingers adjacent to the first finger is positioned on the second surface adjacent to the first slot., 'a retainer positioned between the first surface and the second surface, the retainer comprising2. The retention ...

Ceramic matrix composite ring shroud retention methods-cmc pin-head

The present disclosure is directed to a retention assembly for a stationary gas turbine component. A first stationary gas turbine wall defines a first wall cavity and a second stationary gas turbine wall constructed from a ceramic matrix composite defines a second wall cavity. A pin shaft constructed from a first material includes a first shaft end and a second shaft end. A pin head constructed from the ceramic matrix composite includes a first pin head end and a second pin head end. The pin head defines a pin head cavity extending inward from the first pin head end. The first shaft end is positioned in the first wall cavity, and the second shaft end is positioned in the pin head cavity. The second pin head end is positioned in the second wall cavity. The first material is different from the ceramic matrix composite.

CERAMIC MATRIX COMPOSITE RING SHROUD RETENTION METHODS-WIGGLE STRIP SPRING SEAL

The present disclosure is directed to a retention assembly for a stationary gas turbine component. The retention assembly includes a first stationary gas turbine wall having a first surface. A retention boss extends outwardly from the first surface. The retention assembly includes a second stationary gas turbine wall having a second surface. A retainer is positioned between the first and the second surfaces. The retainer includes a base wall positioned adjacent to the retention boss. A first sidewall extends outwardly from the base wall, and a second sidewall extends outwardly from the base wall. A first arm extends outwardly from the first sidewall, and a second arm extends outwardly from the second sidewall. Each of the first arm and the second arm includes a plurality of convolutions. At least one of the plurality of convolutions is in contact with the second surface. 1. A retention assembly for a stationary gas turbine component , comprising:a first stationary gas turbine wall comprising a first surface and a retention boss extending outwardly from the first surface;a second stationary gas turbine wall comprising a second surface; and a base wall positioned adjacent to the retention boss of the first stationary gas turbine wall;', 'a first sidewall extending outwardly from the base wall;', 'a second sidewall extending outwardly from the base wall;', 'a first arm extending outwardly from the first sidewall; and', 'a second arm extending outward from the second sidewall, wherein each of the first arm and the second arm comprises a plurality of convolutions, and wherein at least one of the plurality of convolutions is in contact with the second surface., 'a retainer positioned between the first surface and the second surface, the retainer comprising2. The retention assembly of claim 1 , wherein the first stationary gas turbine wall is a turbine shroud mount and the second stationary gas turbine wall is a turbine shroud.3. The retention assembly of claim 2 , wherein ...

ADVANCED STATIONARY SEALING CONCEPTS FOR AXIAL RETENTION OF CERAMIC MATRIX COMPOSITE SHROUDS

In one aspect, the present disclosure is directed to a gas turbine sealing assembly that includes a first static gas turbine wall and a second static gas turbine wall. A seal is disposed between the first static gas turbine wall and the second static gas turbine wall. The seal includes a shield wall constructed from a first material that includes a first shield wall portion and a second shield wall portion. A spring constructed from a second material includes a first spring portion and a second spring portion. The first shield wall portion is adjacent to the first spring portion, and the second shield wall portion is adjacent to the second spring portion. 1. A gas turbine sealing assembly , comprising:a first static gas turbine wall;a second static gas turbine wall; and a shield wall constructed from a first material, the shield wall comprising a first shield wall portion and a second shield wall portion; and', 'a spring constructed from a second material, the spring comprising a first spring portion and a second spring portion, wherein the first shield wall portion is adjacent to the first spring portion and the second shield wall portion is adjacent to the second spring portion., 'a seal disposed between the first static gas turbine wall and the second static gas turbine wall, the seal comprising2. The gas turbine sealing assembly of claim 1 , wherein the first static gas turbine wall comprises a turbine shroud assembly mount and the second gas static gas turbine wall comprises a stator vane assembly mount.3. The gas turbine sealing assembly of claim 1 , wherein the shield wall comprises a convolution integrally connecting the first shield wall portion and the second shield wall portion.4. The gas turbine sealing assembly of claim 1 , wherein the first shield wall portion comprises a first shield wall member and the second shield wall portion comprises a second shield wall member claim 1 , and further wherein a first radial wall of the first shield wall member ...

Improved Reading of Soft Bits and Hard Bits from Memory Cells

A memory sub-system configured to execute a read command of a first type using a combine process to read soft bit data and hard bit data from memory cells. For example, a memory device is to: measure signal and noise characteristics of memory cells for the read command; calculate, based on the characteristics, an optimized voltage and two adjacent voltages that have offsets of a same amount from the optimized voltage; read the memory cells for hard bit data using the optimized voltage and for soft bit data using the two adjacent voltages; and transmit, to the processing device, a response including the hard bit data. The soft bit data can be selectively transmitted based on a classification determined from the characteristics. When a read command of a second type is executed, soft bit data is not read; and/or the signal and noise characteristics are not measured.

Device and Method for Managing Die Groups

The embodiments described herein methods and devices that enhance the endurance of a non-volatile memory (e.g., flash memory). The method includes obtaining, for each of the plurality of die, an endurance metric. The method also includes sorting the plurality of die into a plurality of die groups based on their corresponding endurance metrics, where each die group includes one or more die and each die group is associated with a range of endurance metrics. In response to a write command specifying a set of write data, the method further includes writing the write data to the non-volatile memory by writing in parallel subsets of the write data to the one or more die assigned to a single die group of the plurality of die groups. 1. A method of managing a storage system that comprises a storage controller and non-volatile memory , the non-volatile memory comprising a plurality of die and each die comprising a plurality of subunits , the method comprising: for each of the plurality of die, obtaining an endurance metric;', 'sorting the plurality of die into a plurality of die groups based on their corresponding endurance metrics, wherein each die group includes one or more die and each die group is associated with a range of endurance metrics; and', 'in response to a write command specifying a set of write data, writing the set of write data to the non-volatile memory by writing in parallel subsets of the set of write data to the one or more die assigned to a single die group of the plurality of die groups., 'at the storage controller coupled with the non-volatile memory2. The method of claim 1 , wherein obtaining the endurance metric for each of the plurality of die includes performing a calibration routine on a representative subunit in each of the plurality of die to generate the endurance metric for each of the plurality of die.3. The method of claim 1 , wherein writing the write data includes mapping logical addresses of the write data to physical addresses in the ...

Biasing for Wear Leveling in Storage Systems

The various implementations described herein include systems, methods and/or devices used to enable biasing for wear leveling in storage systems. In one aspect, the method includes (1) determining, for each erase unit of a plurality of erase units in the storage medium, an age metric, (2) determining a representative age metric of the plurality of erase units, (3) for each respective erase unit of the plurality of erase units, biasing a respective garbage collection control metric for the respective erase unit in accordance with the age metric of the respective erase unit in relation to the representative age metric of the plurality of erase units to generate an adjusted garbage collection control metric for the respective erase unit, and (4) performing garbage collection for the storage medium in accordance with the adjusted garbage collection control metrics of the plurality of erase units. 1. A method of wear leveling for a storage medium in a storage system , the method comprising:determining, for each erase unit of a plurality of erase units in the storage medium, an age metric;determining a representative age metric of the plurality of erase units;for each respective erase unit of the plurality of erase units, biasing a respective garbage collection control metric for the respective erase unit in accordance with the age metric of the respective erase unit in relation to the representative age metric of the plurality of erase units to generate an adjusted garbage collection control metric for the respective erase unit; andperforming garbage collection for the storage medium in accordance with the adjusted garbage collection control metrics of the plurality of erase units.2. The method of claim 1 , wherein the garbage collection control metric is a valid-page count claim 1 , and wherein biasing the respective valid-page count for the respective erase unit includes:determining the respective valid-page count, wherein the respective valid-page count is a count of ...

Coarse Calibration based on Signal and Noise Characteristics of Memory Cells Collected in Prior Calibration Operations

A memory device to perform a calibration of read voltages of a group of memory cells. For example, the memory device can measure signal and noise characteristics of a group of memory cells to determine an optimized read voltage of the group of memory cells and determine an amount of accumulated storage charge loss in the group of memory cells. Subsequently, the memory device can perform a read voltage calibration based on the determined amount of accumulated storage charge loss and a look up table. 1. A device , comprising:at least one group of memory cells;a first circuit configured to apply a plurality of first voltages to the memory cells and determine states of the memory cells responsive to the first voltages; and determine, based on the states of the memory cells responsive to the first voltages, a statistical distribution of the memory cells over the first voltages;', 'calculate, from the statistical distribution of the memory cells over the first voltages, an amount of accumulated storage charge loss in the memory cells; and', 'determine, using the amount of accumulated storage charge loss, a second voltage to read the memory cells., 'a second circuit configured to2. The device of claim 1 , further configured to perform a read voltage calibration to determine the second voltage based on the amount of accumulated storage charge loss and a look up table.3. The device of claim 2 , wherein the statistical distribution includes a distribution of count difference over the first voltages; wherein each count difference at a voltage between a lower voltage and a higher voltage identifies a difference between a first count of first memory cells having a predetermined state when the higher voltage is applied and a second count of second memory cells having the predetermined state when the lower voltage is applied.4. The device of claim 3 , wherein the amount of accumulated storage charge loss is determined by a predictive model trained using a machine learning ...

WEAR LEVELING WITH WEAR-BASED ATTACK DETECTION FOR NON-VOLATILE MEMORY

Apparatuses, systems, and methods are disclosed for wear leveling for non-volatile memory. An apparatus may include one or more non-volatile memory elements, and a controller. A controller may perform a wear-leveling process for one or more non-volatile memory elements, by periodically updating a logical-to-physical mapping and moving data based on the updated mapping. A controller may detect a wear-based attack for one or more non-volatile memory elements. A controller may change a wear-leveling process in response to detecting a wear-based attack. 1. An apparatus comprisingone or more non-volatile memory elements; and perform a wear-leveling process for the one or more non-volatile memory elements by periodically updating a logical-to-physical mapping and moving data based on the updated mapping;', 'detect a wear-based attack for the one or more non-volatile memory elements; and', 'change the wear-leveling process in response to detecting the wear-based attack., 'a controller configured to2. The apparatus of claim 1 , wherein detecting the wear-based attack comprises determining that an access count violates a threshold claim 1 , the access count comprising one or more of a read count and a write count claim 1 , for a set of one or more logical addresses.3. The apparatus of claim 1 , wherein detecting the wear-based attack comprises determining that an access count violates a threshold claim 1 , the access count comprising one or more of a read count claim 1 , a write count claim 1 , a neighbor read count claim 1 , and a neighbor write count claim 1 , for a set of one or more physical addresses.4. The apparatus of claim 1 , wherein changing the wear-leveling process comprises changing a wear-leveling parameter.5. The apparatus of claim 1 , wherein the wear-leveling parameter comprises one or more of a trigger for updating the logical-to-physical mapping and a quantity of data to move.6. The apparatus of claim 1 , wherein changing the wear-leveling process ...

Urinary Catheter Protective Tips Having A Fluid Reservoir

A catheter assembly includes a catheter at least partially positioned within a sleeve. The catheter has a coating, which produces a low-friction surface on the catheter when treated with an activating fluid. A protective tip is connected to the sleeve and has proximal and distal internal seals, with the proximal seal at the proximal end of the tip or between proximal and distal ends of the protective tip. A cap of the assembly has a projection, which is removably received within the protective tip for sealing engagement with the proximal and distal seals to define a fluid reservoir within the protective tip. An activating fluid is contained within the fluid reservoir. The projection may be partially hollow to receive a portion of the catheter. The sleeve may be relatively narrow or at least have a narrowed portion for better distribution of activating fluid to the surface of the catheter. 18-. (canceled)9. A catheter assembly , comprising:a sleeve;a catheter at least partially positioned within the sleeve and having a coating on at least a part of its length which produces a low-friction surface on the catheter when treated with an activating fluid;a protective tip connected to the sleeve and defining a fluid reservoir;a cap having a projection removably received within the protective tip;an activating fluid contained within the fluid reservoir; and positioned outside of the protective tip and extends between an outer surface of the protective tip and an outer surface of the cap or projection;', 'positioned within the fluid reservoir and extends between an internal surface of the protective tip and an outer surface of the projection; or', 'positioned within the sleeve and connected to a distal end of the protective tip., 'at least one fluid-tight film seal, wherein the at least one fluid-tight film seal is'}10. The catheter assembly of claim 9 , wherein the at least one fluid-tight film seal is peelable or breakable.11. The catheter assembly of claim 9 , wherein the ...

READY-TO-USE URINARY CATHETER ASSEMBLY

A catheter assembly () comprising: a hydrophilic urinary catheter () having a catheter shaft including a proximal insertion end portion () and a distal end portion () having a drainage member (), a collapsible sleeve () defining a compartment () that contains a portion of the catheter shaft, a distal end portion () of the sleeve () being attached to the distal end portion () of the urinary catheter (); an amount of liquid () located within the compartment (); an introducer () located at a proximal end portion () of the sleeve (), the introducer () including a passageway therethrough and a proximal opening for passage of the catheter shaft therethrough; and a removable cap () covering the introducer () wherein the cap () includes an anti-leak element. 1. A catheter assembly comprising:a urinary catheter having a proximal end portion and a distal end portion, the urinary catheter also having a catheter shaft including a proximal insertion end portion and a distal end portion having a drainage member associated therewith, the urinary catheter having a hydrophilic surface;a collapsible sleeve defining a compartment that contains at least a portion of the catheter shaft, a distal end portion of the sleeve being attached to the distal end portion of the urinary catheter;an amount of liquid located within the compartment of he sleeve and in contact with the hydrophilic surface;an introducer located at a proximal end portion of the sleeve, the introducer including a passageway therethrough and a proximal opening for passage of the catheter shaft therethrough; anda removable cap covering the introducer wherein the cap includes an anti-leak element.2. The assembly of wherein the introducer includes flaps that define the proximal end opening.3. The assembly of wherein the introducer includes an insertable portion configured to be inserted into the opening of the urethra and the anti-leak element of the cap comprises an internal surface of the cap that closely conforms to the ...

Storage control system with data management mechanism and method of operation thereof

A method of operation of a storage control system includes: determining a bit error rate of a page; calculating a slope based on the bit error rate; and adjusting a threshold voltage for the page based on the slope for reading a memory device.

Determine Optimized Read Voltage via Identification of Distribution Shape of Signal and Noise Characteristics

A memory device to determine a voltage optimized to read a group of memory cells. In response to a command, the memory device reads the group of memory cells at a plurality of test voltages to determine a set of signal and noise characteristics of the group of memory cells. The memory device determines or recognizes a shape of a distribution of the signal and noise characteristics over the plurality of test voltages. Based on the shape, the memory device selects an operation in determining an optimized read voltage of the group of memory cells. 1. A device , comprising:memory cells;a calibration circuit operable to determine states of the memory cells at a voltage applied to the memory cells; and measure, using the calibration circuit to apply a plurality of voltages to the memory cells, signal and noise characteristics of the memory cells;', 'determine a type of a shape of a distribution of the signal and noise characteristics over the plurality of voltages; and', 'select, based on the type of the shape of the distribution of the signal and noise characteristics over the plurality of voltages, an operation to determine a voltage to read the memory cells., 'a logic circuit configured to2. The device of claim 1 , wherein the distribution of the signal and noise characteristics over the plurality of voltages is representative of a count difference curve over the plurality of voltages; and wherein a count difference between a first voltage and a second voltage is a difference between:a first count of a portion of the memory cells having a predetermined state when applied the first voltage; anda second count of a portion of the memory cells having the predetermined state when applied the second voltage.3. The device of claim 1 , wherein the logic circuit is further configured to determine the type of the shape based on concavity of two portions of the distribution of the signal and noise characteristics over the plurality of voltages.4. The device of claim 3 , wherein ...

Data management with modular erase in a data storage system

A system and method of data management with modular erase in a data storage system with a memory array having an erase block and a target block with the target block in a logical unit separate from the erase block including: performing an erase operation on the erase block, the erase operation having an operation matrix configured for partial erasing of the erase block; updating a command status for the erase block; enabling an intervening command on the target block based on the command status indicating an incomplete erase status with the intervening command updating the command status; performing an erase optimization based on the command status; performing an additional erase operation based on the erase optimization; and updating the command status to an erase complete status based on the additional erase operation.

Mapping for Multi-State Programming of Memory Devices

Storage device programming methods, systems and devices are described. A method may generate a mapping of data based on a set of data, the mapping of data including a first mapped data and a second mapped data. The method may include performing a first programming operation to write, in a first mode, the first mapped data to the memory device. The method may include storing the second mapped data to a cache. The method may include generating a second set of data, based on an inverse mapping of the mapping of data including the second mapped data from the cache and the first mapped data from the memory device, for writing, in a second mode, to the memory device, wherein the second set of data includes the set of data, and the first mode and the second mode correspond to different modes of writing to the memory device.

Adaptive Erase of a Storage Device

The various implementations described herein include systems, methods and/or devices used to enable adaptive erasure in a storage device. The method includes performing a plurality of memory operations including read operations and respective erase operations on portions of one or more non-volatile memory devices specified by the read operations and respective erase operations, where the respective erase operations are performed using a first set of erase parameters that has been established as a current set of erase parameters prior to performing the respective erase operations. The method includes, in accordance with each erase operation of at least a subset of the respective erase operations, updating one or more erase statistics that correspond to performance of multiple erase operations. The method includes, in accordance with a comparison of the erase statistics with an erasure performance threshold, establishing a second set of erase parameters as the current set of erase parameters. 1. A method of erasing data in a storage device , the storage device having one or more non-volatile memory devices , the method comprising:performing a plurality of memory operations including read operations and respective erase operations on portions of the one or more non-volatile memory devices specified by the read operations and respective erase operations, wherein the respective erase operations are performed using a first set of erase parameters that has been established as a current set of erase parameters prior to performing the respective erase operations;in accordance with each erase operation of at least a subset of the respective erase operations, updating one or more erase statistics that correspond to performance of multiple erase operations; and,in accordance with a comparison of the erase statistics with an erasure performance threshold, establishing a second set of erase parameters as the current set of erase parameters.2. The method of claim 1 , wherein the ...

READY-TO-USE URINARY CATHETER ASSEMBLY

Catheter assemblies including a catheter and a liquid. 1. A catheter assembly comprising:a urinary catheter comprising a shaft with a proximal end portion and a distal end portion, the shaft having a hydrophilic surface;a collapsible sleeve defining a compartment that contains at least a portion of the catheter shaft, a distal end portion of the sleeve being attached to the distal portion of the urinary catheter;a wetting fluid located within the compartment of the sleeve;an introducer tip located at a proximal end of the sleeve;a removable cap covering the introducer, wherein the cap defines a cavity that receives the introducer tip; andan absorbent material located in the cavity.2. The catheter assembly of claim 1 , wherein the absorbent material surrounds at least a portion of the introducer tip.3. The catheter assembly of claim 1 , wherein the cavity of the cap comprises a proximal end portion and a distal end portion that is wider than the proximal end portion.4. The catheter assembly of claim 2 , wherein the cavity is defined by an internal surface of the cap and the absorbent material is located on the internal surface of the cap.5. The catheter assembly of claim 4 , wherein the absorbent material covers at least a portion of the internal surface defining the proximal end portion of the cavity.6. The catheter assembly of claim 5 , wherein the absorbent material covers the entire internal surface defining the proximal end portion of the cavity.7. The catheter assembly of claim 6 , wherein the absorbent material comprises an inner surface defining an inner cavity shaped to receive the introducer tip.8. The catheter assembly of claim 7 , wherein the inner surface is commensurate to the size and shape of the introducer tip.9. The catheter assembly of claim 6 , wherein the absorbent material comprises a deformable material configured to contact and conform to the shape of the introducer tip.10. The catheter assembly of claim 2 , wherein the absorbent material ...

Memory System Performance Enhancements using Measured Signal and Noise Characteristics of Memory Cells

A memory sub-system configured to improve performance using signal and noise characteristics of memory cells measured during the execution of a command in a memory component. For example, the memory component is enclosed in an integrated circuit and has a calibration circuit. The signal and noise characteristics are measured by the calibration circuit as a byproduct of executing the command in the memory component. A processing device separate from the memory component transmits the command to the memory component, and receives and processes the signal and noise characteristics to identify an attribute about the memory component. Subsequently, an operation related to data stored in the memory component can be performed based on the attribute. 1. A memory sub-system , comprising:a processing device; and a group of memory cells formed on an integrated circuit die; and', 'a calibration circuit;, 'at least one memory component, the memory component being enclosed in an integrated circuit package, the memory component havingwherein the processing device is configured to transmit a command to the memory component to retrieve data from an address;wherein in response to the command and during execution of the command, the calibration circuit is configured to measure signal and noise characteristics of the group of memory cells;wherein the memory component is configured to provide the signal and noise characteristics to the processing device; andwherein the processing device is configured to process the signal and noise characteristics to identify an attribute about the memory component and perform an operation related to data stored in the memory component based on the attribute.2. The memory sub-system of claim 1 , wherein the calibration circuit is formed at least in part on the integrated circuit die.3. The memory sub-system of claim 1 , wherein the signal and noise characteristics include a count of memory cells in the group having a predetermined state when a read ...

Method and system for improving data integrity in non-volatile storage

A method for improving data integrity in a non-volatile memory system includes: accessing a non-volatile memory cell for retrieving hard data bits; generating soft information by capturing a reliability of the hard data bits; calculating syndrome bits by applying a lossy compression to the soft information; and generating a host data by executing a low density parity check (LDPC) iterative decode on the hard data bits and the syndrome bits.

BANDWIDTH OPTIMIZATION IN A NON-VOLATILE MEMORY SYSTEM

A method of bandwidth optimization in a non-volatile memory system includes: retrieving hard data bits; generating soft information from the hard data bits; applying a lossless compression to the soft information for calculating syndrome bits; and executing a low density parity check (LDPC) iterative decode on the hard data bits and the syndrome bits. 1. A method of bandwidth optimization in a non-volatile memory system comprising:retrieving hard data bits;generating soft information from the hard data bits;applying a lossless compression to the soft information for calculating syndrome bits; andexecuting a low density parity check (LDPC) iterative decode on the hard data bits and the syndrome bits.2. The method as claimed in wherein applying the lossless compression to the soft information includes examining a cluster of the soft information for determining the syndrome bits.3. The method as claimed in further comprising decompressing cluster syndrome bits from the syndrome bits.4. The method as claimed in further comprising calculating probability bits from the syndrome bits.5. The method as claimed in wherein generating the soft information includes comparing a first read register and a second read register.6. The method as claimed in wherein executing the low density parity check (LDPC) iterative decode includes calculating probability bits from the syndrome bits.7. The method as claimed in wherein generating soft information includes loading a first read register at a first threshold voltage and a second read register at a second threshold voltage.8. A non-volatile memory system comprising:a non-volatile memory cell having hard data bits;a destination register, coupled to a non-volatile memory cell, for retrieving the hard data bits;a soft information module, coupled to the destination register, for calculating a soft information from the hard data bits;a lossless compression module, coupled to the soft information module, configured to calculate syndrome bits ...

Management of Programming Mode Transitions to Accommodate a Constant Size of Data Transfer between a Host System and a Memory Sub-System

A memory sub-system configured to manage programming mode transitions to accommodate a constant size of data transfer between a host system and a memory sub-system. The memory sub-system counts single-page transitions of atomic programming modes performed within a memory sub-system and determines whether or not to allow any two-page transition of atomic programming modes based on whether an odd or even number of the single-page transitions have been counted. When an odd number of the transitions have been counted, no two-page transition is allowed; otherwise, one or more two-page transitions are allowable. A next transition of atomic programming modes is selected based on the determining of whether or not to allow any two-page transitions.

MAPPING FOR MULTI-STATE PROGRAMMING OF MEMORY DEVICES

Storage device programming methods, systems and devices are described. A method may generate a mapping of data based on a set of data, the mapping of data including a first mapped data and a second mapped data. The method may include performing a first programming operation to write, in a first mode, the first mapped data to the memory device. The method may include storing the second mapped data to a cache. The method may include generating a second set of data, based on an inverse mapping of the mapping of data including the second mapped data from the cache and the first mapped data from the memory device, for writing, in a second mode, to the memory device, wherein the second set of data includes the set of data, and the first mode and the second mode correspond to different modes of writing to the memory device. 1. A method implemented using one or more controllers for a memory device , the method comprising:generating a mapping of data based on a set of data, the mapping of data including a first mapped data and a second mapped data, wherein an amount of the first mapped data is greater than an amount of the second mapped data;performing a first programming operation to write, in a first mode, the first mapped data to the memory device;storing the second mapped data to a cache; andgenerating a second set of data, based on an inverse mapping of the mapping of data including the second mapped data from the cache and the first mapped data from the memory device, for writing, in a second mode, to the memory device, wherein the second set of data comprises the set of data, and the first mode and the second mode correspond to different modes of writing to the memory device.2. The method of claim 1 , wherein generating the mapping of data based on the set of data further comprises:generating the first mapped data and the second mapped data based on a Gray code encoding of the set of data,wherein the first mapped data comprises a first plurality of data representable ...

MULTI-LEVEL CELL PROGRAMMING USING OPTIMIZED MULTIPHASE MAPPING WITH BALANCED GRAY CODE

Disclosed are systems and methods for providing programming of multi-level memory cells using an optimized multiphase mapping with a balanced Gray code. A method includes programming, in a first phase, a first portion of data into memory cells in a first-level cell mode. The method may also include reading, from the memory cells, the programmed first portion of the data. The method may also include programming, in a second phase, a second portion of the data into the memory cells in a second-level cell mode, wherein programming the second phase is based on applying, to the read first portion of the data, a mapping from the first-level cell mode to the second-level cell mode. The mapping may be selected based on minimizing an average voltage change of the memory cells from the first to second phase while maintaining a balanced Gray code. 1. A data storage device , comprising:a flash memory comprising memory cells; and program, in a first phase, a first portion of data into the memory cells in a first-level cell mode;', 'read, from the memory cells, the programmed first portion of the data; and', 'program, in a second phase, a second portion of the data into the memory cells in a second-level cell mode, based on applying, to the read first portion of the data, a mapping from the first-level cell mode to the second-level cell mode,', 'wherein the mapping is based on minimizing an average voltage change of the memory cells from the first phase to the second phase while maintaining a balanced Gray code for memory pages in the second-level cell mode, wherein a difference between transition counts of any two pages of the memory pages does not exceed a predetermined transition count difference, wherein a sum of the transition counts for all of the memory pages does not exceed a maximum number of programming levels in the second-level cell mode,', 'wherein for the first phase, the controller is configured to program the first portion of data into the memory cells in the ...

Urinary Catheter Protective Tips Having A Fluid Reservoir

A catheter assembly includes a catheter at least partially positioned within a sleeve. The catheter has a coating, which produces a low-friction surface on the catheter when treated with an activating fluid. A protective tip is connected to the sleeve and has proximal and distal internal seals, with the proximal seal at the proximal end of the tip or between proximal and distal ends of the protective tip. A cap of the assembly has a projection, which is removably received within the protective tip for sealing engagement with the proximal and distal seals to define a fluid reservoir within the protective tip. An activating fluid is contained within the fluid reservoir. The projection may be partially hollow to receive a portion of the catheter. The sleeve may be relatively narrow or at least have a narrowed portion for better distribution of activating fluid to the surface of the catheter.

DATA MANAGEMENT IN A STORAGE SYSTEM

A storage system, and a method of data management in the storage system, with non-volatile memory device characteristics determined during an inspection of non-volatile memory devices before a runtime operation of a storage device in the storage system including: a controller in the storage system: a drive-level control unit configured for an update of operational capabilities based on the non-volatile memory device characteristics during the runtime operation of the storage device and for a group of the non-volatile memory devices based on the operational capabilities; and a memory control unit, coupled to the drive-level control unit, the memory control unit configured to receive the operational capabilities for control of the non-volatile memory devices. 1. A method of data management based on non-volatile memory device characteristics determined during an inspection of non-volatile memory devices before a runtime operation of a storage device in a storage system comprising: updating operational capabilities based on the non-volatile memory device characteristics during the runtime operation of the storage device;', 'grouping the non-volatile memory devices based on the operational capabilities; and', 'receiving the operational capabilities for controlling the non-volatile memory devices., 'performing by a controller in the storage system2. The method as claimed in further comprising selecting the non-volatile memory devices based on a predicted use model.3. The method as claimed in wherein grouping the non-volatile memory devices includes grouping the non-volatile memory devices claim 1 , which have substantially similar non-volatile memory device characteristics.4. The method as claimed in wherein grouping the non-volatile memory devices includes grouping the non-volatile memory devices for improved aging claim 1 , endurance claim 1 , and reliability of the storage device.5. The method as claimed in wherein updating the operational capabilities includes ...

STORAGE CONTROL SYSTEM WITH POWER-OFF TIME ESTIMATION MECHANISM AND METHOD OF OPERATION THEREOF

A storage control system, and a method of operation thereof, including: a power-down module for powering off a memory sub-system; a decay estimation module, coupled to the power-down module, for estimating a power-off decay rate upon the memory sub-system powered up, the power-off decay rate is for indicating how much data in the memory sub-system has decayed while the memory sub-system has been powered down; and a recycle module, coupled to the decay estimation module, for recycling an erase block for data retention based on the power-off decay rate. 1. A method of operation of a storage control system comprising:powering off a memory sub-system;estimating a power-off decay rate upon the memory sub-system powered up, the power-off decay rate is for indicating how much data in the memory sub-system has decayed while the memory sub-system has been powered down; andrecycling an erase block for data retention based on the power-off decay rate.2. The method as claimed in wherein estimating includes estimating an error rate of oldest data in the erase block at risk of data loss.3. The method as claimed in wherein estimating includes estimating an error rate of freshest data claim 1 , in the erase block at risk of data loss.4. The method as claimed in wherein estimating includes estimating an error rate of surrogate data in a portion of a memory device set aside as a measure of data retention for the memory sub-system.5. The method as claimed in wherein estimating includes estimating a decay based on a difference between a pre-power-down threshold voltage and a post-power-up threshold voltage for determining the power-off decay rate.6. A method of operation of a storage control system comprising:powering off a memory sub-system;estimating a power-off decay rate upon the memory sub-system powered up, the power-off decay rate as a function of time and temperature is for indicating how much data in the memory sub-system has decayed while the memory sub-system has been ...

Adaptive Target Charge to Equalize Bit Errors Across Page Types

Systems, methods and/or devices are used to adapt a target charge to equalize bit errors across page types for a storage medium, such as flash memory, in a storage system. In one aspect, the method includes performing a sequence of operations, including: (1) determining a first target charge, a second target charge, and a third target charge, the first, second, and third target charges used for controlling first, second, and third charge distributions, respectively, in cells of the storage medium when data is written to the cells, wherein the second charge distribution is between the first charge distribution and the third charge distribution, (2) determining a first error indicator for lower/fast pages of the storage medium, (3) determining a second error indicator for upper/slow pages of the storage medium, and (4) adjusting the second target charge in accordance with the first error indicator and the second error indicator. 1. A method of setting target charges for a storage medium in a storage system , the method comprising: determining a first target charge, a second target charge, and a third target charge, the first, second, and third target charges used for controlling first, second, and third charge distributions, respectively, in cells of the storage medium when data is written to the cells, wherein the second charge distribution is between the first charge distribution and the third charge distribution;', 'determining a first error indicator for lower/fast pages of the storage medium;', 'determining a second error indicator for upper/slow pages of the storage medium; and', 'adjusting the second target charge in accordance with the first error indicator and the second error indicator., 'performing a sequence of operations, including2. The method of claim 1 , wherein adjusting the second target charge in accordance with the first error indicator and the second error indicator includes:in accordance with a determination that the first error indicator is ...

Self Adapting Iterative Read Calibration to Retrieve Data from Memory Cells

A memory sub-system configured to iterative calibrate read voltages, where higher read voltages are calibrated based on the calibration results of lower read voltages. For example, a memory device initially determines first read voltages of a group of memory cells. The memory device calculates a second read voltage optimized to read the group of memory cells according to first signal and noise characteristics measured based on at least one of the first read voltages. A third read voltage is estimated based on an offset of the second read voltage from a corresponding voltage among the first read voltages. Second signal and noise characteristics of the group of memory cells are measured based on the third read voltage. The memory device then calculates a fourth read voltage optimized to read the group of memory cells according to the second signal and noise characteristics. 1. A device , comprising:memory cells configured to be read at a plurality of voltage levels; and receive first data representative of a plurality of first voltages at the plurality of voltage levels respectively;', 'receive second data representative of first signal and noise characteristics of the memory cells, measured at one or more voltage levels according to the plurality of first voltages;', 'calculate, based on the first signal and noise characteristics, one or more second voltages respectively at the one or more voltage levels;', 'determine one or more offsets respectively at the one or more voltage levels between the one or more second voltages and the plurality of first voltages; and', 'estimate a third voltage at a corresponding voltage level among the plurality of voltage levels;, 'a logic circuit, configured towherein the device is further configured to measure, based on the third voltage, second signal and noise characteristics of the memory cells to determine a fourth voltage to read the memory cells at the corresponding voltage level.2. The device of claim 1 , further comprising:a ...

PRICE PAID DATABASE METHOD AND SYSTEM

A novel price paid database, method, system, and computer program product in which checkout items are scanned at a plurality of stores, and a checkout computer identifies the purchased items. The checkout computer determines a price paid for each purchased item. A central computer records in a price-paid database an item identification and price-paid for each purchased items. The central computer publishes the price-paid database. The checkout computer recurrently updates the price-paid database in the central computer with the price paid for each purchased item, the customer identification (if available), the store identification, and a list price for each purchased item. 150-. (canceled)51. A computer implemented method of facilitating provision of prices paid , the method being implemented by a computer system having one or more physical processors programmed by computer program instructions that , when executed by the one or more physical processors , cause the computer system to perform the method , the method comprising:receiving, by the computer system, a first set of prices paid from a first retailer, wherein the first set of prices paid indicates a price paid for one or more items at the first retailer;receiving, by the computer system, a second set of prices paid from a second retailer, wherein the second set of prices paid indicates a price paid for one or more items at the second retailer;generating, by the computer system, a first indexed volume of prices paid based on the first set of prices and the second set of prices, wherein the first indexed volume represents prices paid at the first retailer and the second retailer during a first time period;identifying, by the computer system, a subscriber that has subscribed to receive indexed volumes of prices paid; andproviding, by the computer system, the first indexed volume to the identified subscriber.52. The method of claim 51 , the method further comprising:receiving a third set of prices paid from the ...

IMPROVED READING OF SOFT BITS AND HARD BITS FROM MEMORY CELLS

A memory sub-system configured to execute a read command of a first type using a combine process to read soft bit data and hard bit data from memory cells. For example, a memory device is to: measure signal and noise characteristics of memory cells for the read command; calculate, based on the characteristics, an optimized voltage and two adjacent voltages that have offsets of a same amount from the optimized voltage; read the memory cells for hard bit data using the optimized voltage and for soft bit data using the two adjacent voltages; and transmit, to the processing device, a response including the hard bit data. The soft bit data can be selectively transmitted based on a classification determined from the characteristics. When a read command of a second type is executed, soft bit data is not read; and/or the signal and noise characteristics are not measured. 1. A memory sub-system , comprising:a processing device; and a group of memory cells formed on an integrated circuit die; and', 'a calibration circuit configured to measure signal and noise characteristics of memory cells in the memory device;, 'at least one memory device, the memory device havingwherein the processing device is configured to transmit a read command of a first type to the memory device, the read command including an address to identify the group of memory cells; measure, using the calibration circuit, first signal and noise characteristics of the group of memory cells identified by the address;', 'calculate, based on the first signal and noise characteristics, a first optimized read voltage and at least two adjacent read voltages, wherein the two adjacent read voltages have offsets of a same predetermined amount from the first optimized read voltage;', 'read the group of memory cells using the first optimized read voltage and the at least two adjacent read voltages; and', 'transmit, to the processing device, a response to the read command of the first type, based at least on a result of ...

DETERMINE SIGNAL AND NOISE CHARACTERISTICS CENTERED AT AN OPTIMIZED READ VOLTAGE

A memory device to estimate signal and noise characteristics of a group of memory cells in response to a command identifying the group of memory cells. For example, the memory device measures first signal and noise characteristics of the group of memory cells based on first test voltages, compute using the first signal and noise characteristics an optimized read voltage of the group of memory cells, and estimate, using the first signal and noise characteristics, second signal and noise characteristics of the group of memory cells, where the second signal and noise characteristics are based on second test voltages that are centered at the optimized read voltage of the group of memory cells. 1. A memory device , comprising:an integrated circuit package enclosing the memory device; anda plurality of groups of memory cells formed on at least one integrated circuit die; measure first signal and noise characteristics of the group of memory cells based on first test voltages;', 'compute, from the first signal and noise characteristics, an optimized read voltage of the group of memory cells; and', 'estimate, from the first signal and noise characteristics, second signal and noise characteristics of the group of memory cells based on second test voltages that are centered at the optimized read voltage of the group of memory cells., 'wherein in response to a command identifying a group of memory cells within the plurality of groups, the memory device is configured to2. The memory device of claim 1 , wherein the first test voltages are equally spaced according to a predetermined voltage gap.3. The memory device of claim 2 , wherein to measure the first signal and noise characteristics claim 2 , the memory device is configured to:read the group of memory cells at the plurality of first test voltages;determine bit counts at the first test voltages respectively, wherein each bit count at a test voltage identifies a number of memory cells in the group that, when read at the test ...

COMPUTE AN OPTIMIZED READ VOLTAGE

A memory device to determine a voltage optimized to read a group of memory cells by reading the group of memory cells at a plurality of test voltages, computing bit counts at the test voltages respectively, and computing count differences in the bit counts for pairs of adjacent voltages in the test voltages. When a smallest one in the count differences is found at a side of a distribution of the count differences according to voltage, the memory device is configured to determine a location of an optimized read voltage, based on a ratio between a first count difference and a second count difference, where the first count difference is the smallest in the count differences, and the second count difference is closest in voltage to the first count difference. 1. A device , comprising:memory cells formed on an integrated circuit die; and determine a plurality of bit counts at a plurality of test voltages respectively, wherein each bit count at a test voltage is a count, within the memory cells, of first memory cells having a predetermined state when read at the test voltage;', 'compute count differences from the bit counts, wherein each count difference is a difference between two bit counts at respectively two adjacent voltages in the test voltages and is associated with a voltage interval between the two adjacent voltages;', 'identify among the count differences, a first count difference that is no greater than at least two of the count differences and that has an associated voltage interval not located between associated voltage intervals of two of the count differences; and', 'determine, within the associated voltage interval of the first count difference, a voltage optimized to read the memory cells., 'a logic circuit configured to2. The device of claim 1 , wherein the logic circuit is configured to select the voltage optimized to read the memory cells from a plurality of candidates on the associated voltage interval of the first count difference.3. The device of ...

Intelligent Proactive Responses to Operations to Read Data from Memory Cells

A memory device to generate intelligent, proactive responses to a read command. For example, signal and noise characteristics of a group of memory cells in a memory device are measured to determine a read voltage. An action is identified based on evaluation of the quality of data retrievable using the read voltage from the group of memory cells. While a response indicating the action is provided responsive to the command, the memory device can initiate the action proactively before a subsequent command, following the response, is received. 1. A device , comprising:memory cells; and determine an operation based on quality of first data retrievable from the memory cells; and', 'initiate the operation before the device receives a subsequent second command following a response to the first command., 'a logic circuit configured to, in response to a first command to read the memory cells2. The device of claim 1 , comprising:a communication interface, wherein the device is configured to receive the subsequent second command via the communication interface and provide the response via the communication interface; and wherein the operation is required in execution of the second subsequent command.3. The device of claim 2 , further comprising:an integrated circuit package enclosing the device.4. The device of claim 2 , wherein the logic circuit is configured to determine the quality based on second data representative of signal and noise characteristics of the memory cells.5. The device of claim 4 , wherein to measure the signal and noise characteristics claim 4 , the logic circuit is configured to:read the memory cells at a plurality of test voltages; anddetermine a plurality of bit counts at the plurality of test voltages respectively, wherein each bit count at a respective test voltage represents, among the memory cells, a count of first memory cells that, when read at the respective test voltage, have a predetermined state.6. The device of claim 5 , wherein the logic ...

MODULAR FOLDING TABLE WITH COLLAPSIBLE LEGS

A portable modular folding table can include a substantially flat tabletop having three or more tabletop sections, hinges coupled to the tabletop sections, and collapsible legs that are modular and separate from the tabletop. The tabletop can have a width and a length that is at least twice as large as the width, and the tabletop sections are coupled to and foldable onto each other to reduce the length of the tabletop by less than half when the tabletop is reduced from a fully extended configuration to a fully compacted configuration. Each of the collapsible legs can be adjustable to multiple different heights and can have multiple tabletop support points. The tabletop can rest atop the tabletop support points when the tabletop is in a fully extended configuration and the tabletop can be separated from and stored alongside the collapsible legs when the tabletop is in a fully compacted configuration. 1. A portable modular folding table , comprising:a substantially flat tabletop having a width, and a length that is at least twice as large as the width, wherein the tabletop includes three or more tabletop sections having the same width that are coupled to and foldable onto each other;a plurality of hinges coupled to the three or more tabletop sections, the plurality of hinges facilitating the folding and unfolding of the three or more tabletop sections onto each other; anda plurality of collapsible legs that are modular and separate from the tabletop, each of the plurality of collapsible legs being adjustable to multiple different heights.2. The portable modular folding table of claim 1 , wherein the three or more tabletop sections are foldable onto each other to reduce the length of the tabletop by less than half when the tabletop is reduced from a fully extended configuration to a fully compacted configuration.3. The portable modular folding table of claim 2 , wherein a first tabletop section has a first length claim 2 , a second tabletop section has a second length ...

DRY TO THE TOUCH VAPOR HYDRATION SLEEVE

A package for a hydrophilic coated catheter includes a sleeve with liquid water impermeable and water vapor impermeable walls. A liquid flow interfering element, such as a liquid water impermeable, vapor permeable membrane is provided within the sleeve. The sleeve may include a wicking element that is isolated from the catheter. Liquid water is provided on one side of the liquid flow interfering element. As the liquid water changes phase to a vapor, the vapor permeates through the liquid flow interfering element and activates the hydrophilic coating. The sleeve is collapsible during manipulation of the catheter through the wall of the sleeve so as to advance the catheter through an insertion tip to facilitate urethral insertion, with the exterior of the sleeve walls remaining dry to the touch. A funnel end of the catheter may remain in communication with the sleeve, such that the sleeve may be used to direct the flow of urine. 1. A dry-to-the touch , ready-to-use catheter assembly , comprising:a catheter having an insertable portion with a hydrophilic outer surface in an activated condition;a liquid and vapor impermeable sleeve covering at least the insertable portion of the catheter;an amount of liquid disposed between the sleeve and the insertable portion of the catheter;the amount of liquid being contained by a liquid flow interfering element that substantially interferes with liquid flow;a vapor atmosphere within the liquid and vapor impermeable sleeve, wherein the vapor atmosphere is produced by vapor donated from the amount of liquid contained by the liquid flow interfering element; andthe liquid flow interfering element being disposed between the sleeve and the insertable portion of the catheter such that the liquid flow interfering element substantially prevents direct liquid contact between the amount of liquid contained by the liquid flow interfering element and the hydrophilic outer surface of the insertable portion of the catheter while permitting ...

MULTI-PHASED PROGRAMMING WITH BALANCED GRAY CODING

Disclosed are systems and methods for providing multi-phased programming with balanced Gray coding. A method includes programming, in a first phase, a first portion of data into memory cells of a flash memory in a first-level cell mode. The method also includes retaining, in a cache, at least a subset of the data. The method also includes regenerating the data from at least the cache, wherein the regenerated data includes a second portion of the data. The method also includes programming, in a second phase, the regenerated data in a second-level cell mode based on a mapping from the first-level cell mode to the second-level cell mode. The mapping maps each state distribution in the first-level cell mode to at least two non-adjacent state distributions in the second-level cell mode, and a width of each state distribution in the first-level cell mode may be narrowed. 1. A data storage device , comprising:a flash memory comprising memory cells;a cache; and program, in a first phase, a first portion of data into the memory cells in a first-level cell mode;', 'retain, in the cache, at least a subset of the data;', 'regenerate the data from at least the cache, wherein the regenerated data includes a second portion of the data; and', 'program, in a second phase, the regenerated data in a second-level cell mode based on a mapping from the first-level cell mode to the second-level cell mode,', 'wherein the mapping maps each state distribution in the first-level cell mode to at least two non-adjacent state distributions in the second-level cell mode, and', 'wherein the mapping configures a width of each state distribution in the first-level cell mode to be less than a combined width of corresponding state distributions in the second-level cell mode., 'a controller configured to2. The data storage device of claim 1 , wherein the controller is configured to retain claim 1 , in the cache claim 1 , no more than the first portion of the data in single-level memory cells (SLC).3. ...

Hygienic medical devices having hydrophilic coatings and methods of forming the same

Hygienic Hydrophilic coatings, hydrophilic coating formulations and wetting fluids that include an anti-infective agent.

ATTACHMENT ASSEMBLY AND GAS TURBINE ENGINE WITH ATTACHMENT ASSEMBLY

An attachment assembly for attaching a center structure to an outer structure at least partially circumscribing the center structure, the attachment assembly having a bushing provided within the center structure or the outer structure, the bushing defining a first through passage, a bushing adapter slidably mounted within the first through passage and defining a second through passage, a threaded passage provided on the other of the center structure or the outer structure and a bolt passing through the first through passage and the second through passage and threaded into the threaded passage. 1. An attachment assembly for attaching a center structure to an outer structure at least partially circumscribing the center structure , the attachment assembly comprising:a bushing provided within the center structure or the outer structure, the bushing defining a first through passage;a bushing adapter slidably mounted within the first through passage and defining a second through passage;a threaded passage provided on the other of the center structure or the outer structure; anda bolt having a head and a shank with a threaded portion wherein the bolt passes through the first through passage and the second through passage, with the head abutting the bushing adapter and the threaded portion threaded into the threaded passage.2. The attachment assembly according to claim 1 , further comprising a belleville washer that clamps the bushing to the center structure.3. The attachment assembly of wherein the bolt further comprises a third through passage extending through its length and the third through passage defines a fluid path from the center structure to the outer structure.4. The attachment assembly of wherein the bushing has a cylindrical body that terminates in a shoulder claim 1 , which forms a stop.5. The attachment assembly of wherein the bushing has a cylindrical internal portion.6. The attachment assembly of wherein the bushing adapter has an annular shoulder with a ...

SYSTEM FOR THERMALLY ISOLATING A TURBINE SHROUD

In one aspect the present subject matter is directed to a system for thermally isolating a turbine shroud of a turbine shroud assembly. The system includes a shroud support having an inner surface and a turbine shroud that is connected to the shroud support. The turbine shroud includes a hot side surface that is radially spaced from a back side surface. At least a portion of the back side surface is oriented towards the inner surface of the shroud support. The system further includes a coating that is disposed along the back side surface of the turbine shroud. The coating regulates heat transfer from the turbine shroud to the shroud support or other hardware that may surround or be adjacent to the turbine shroud. 1. A system for thermally isolating a turbine shroud of a turbine shroud assembly , the system comprising:a shroud support having an inner surface;a turbine shroud connected to the shroud support, the turbine shroud having a hot side surface radially spaced from a back side surface, wherein the back side surface is oriented towards the inner surface of the shroud support; anda coating disposed along the back side surface of the turbine shroud, wherein the coating regulates heat transfer via conduction or radiation from the back side surface of the turbine shroud to the shroud support.2. The system as in claim 1 , wherein the turbine shroud is formed from a ceramic matrix composite material.3. The system as in claim 1 , wherein at least a portion of the coating has an emissivity value that is less than an emissivity value of the turbine shroud.4. The system as in claim 1 , wherein at least a portion of the coating has an emissivity value of greater than 0.0 and less than 0.7.5. The system as in claim 1 , wherein at least a portion of the coating has an emissivity value of between about 0.3 to about 0.7.6. The system as in claim 1 , wherein the turbine shroud is formed from a ceramic matrix composite material having an emissivity value of about 0.8.7. The ...

Mapping for Multi-State Programming of Memory Devices

Storage device programming methods, systems and devices are described. A method may generate a mapping of data based on a set of data, the mapping of data including a first mapped data and a second mapped data. The method may include performing a first programming operation to write, in a first mode, the first mapped data to the memory device. The method may include storing the second mapped data to a cache. The method may include generating a second set of data, based on an inverse mapping of the mapping of data including the second mapped data from the cache and the first mapped data from the memory device, for writing, in a second mode, to the memory device, wherein the second set of data includes the set of data, and the first mode and the second mode correspond to different modes of writing to the memory device.

Multi-Level Cell Programming Using Optimized Multiphase Mapping With Balanced Gray Code

Disclosed are systems and methods for providing programming of multi-level memory cells using an optimized multiphase mapping with a balanced Gray code. A method includes programming, in a first phase, a first portion of data into memory cells in a first-level cell mode. The method may also include reading, from the memory cells, the programmed first portion of the data. The method may also include programming, in a second phase, a second portion of the data into the memory cells in a second-level cell mode, wherein programming the second phase is based on applying, to the read first portion of the data, a mapping from the first-level cell mode to the second-level cell mode. The mapping may be selected based on minimizing an average voltage change of the memory cells from the first to second phase while maintaining a balanced Gray code. 1. A data storage system , comprising:memory cells; and writing, in a first phase, a first data portion into the memory cells in a first-level cell mode; and', 'writing, in a second phase, a second data portion into the memory cells in a second-level cell mode, based on a mapping between the first-level cell mode and the second-level cell mode,', 'wherein:', 'a difference between transition counts of any two pages of memory pages in the second-level cell mode does not exceed a transition count difference,', 'a sum of the transition counts for the memory pages in the second-level cell mode does not exceed a maximum number of programming levels in the second-level cell mode,', 'a number of transition counts for each page of multiple pages associated with the first phase is different from a number of transition counts for a corresponding page of multiple pages associated with the second phase, and', 'the transition count difference is an integer., 'one or more controllers configured to cause2. The data storage system of claim 1 ,wherein for the first phase, the one or more controllers are configured to cause writing the first data ...

Sub-Block Garbage Collection

Systems, methods and/or devices are used to enable garbage collection of a sub-block of an individually erasable block of a storage medium in a storage device. In one aspect, the method includes determining a first trigger parameter in accordance with one or more operating conditions of a first sub-block of an erase block in the storage medium, and determining a second trigger parameter in accordance with one or more operating conditions of a second sub-block of the erase block in the storage medium. In accordance with a determination that the first trigger parameter meets a first vulnerability criterion, garbage collection of the first sub-block is enabled. Furthermore, in accordance with a determination that the second trigger parameter meets a second vulnerability criterion, garbage collection of the second sub-block is enabled. 1. A method of garbage collection for a storage medium in a storage device , the method comprising:determining a first trigger parameter in accordance with one or more operating conditions of a first sub-block of a first erase block in the storage medium;determining a second trigger parameter in accordance with one or more operating conditions of a second sub-block of the first erase block in the storage medium;in accordance with a determination that the first trigger parameter meets a first vulnerability criterion, enabling garbage collection of the first sub-block; and writing a copy of valid data from the particular sub-block to a second erase block in the storage medium, wherein the second erase block is distinct from the first erase block; and', 'invalidating the particular sub-block in the first erase block., 'in accordance with a determination that the second trigger parameter meets a second vulnerability criterion, enabling garbage collection of the second sub-block, wherein the first vulnerability criterion is distinct from the second vulnerability criterion, wherein the first vulnerability criterion is a first read-disturb ...

Apparatus and Method for Controlling an Audio/Video Connection in a Device

An apparatus and method for controlling an audio/video connection in a device is described. The method includes entering a first state in response to a user input, the first state powering a portion of circuits, detecting the presence of a signal, the signal to be output from the device for display on a display device, and entering a second state if the presence of the signal is detected, powering circuits for outputting the received signal. The apparatus includes a standby circuit, receiving a user input placing the apparatus into a first state, a receiving circuit detecting the presence of a signal in the first state and providing a signal to place the apparatus in a second state if the signal is detected, and a processing circuit being operational in the second state, the signal processing circuit outputting the signal for display on a display device in the second state. 1. A method comprising:entering a first operational state in a device in response to a user input, the first operational state powering a portion of circuits in the device;detecting the presence of a signal received at an input to the device, the received signal to be output from the device for display on a display device; andentering a second operational state in the device if the presence of the signal is detected, the second operational state powering circuits for outputting the received signal.2. The method of claim 2 , further comprising:determining the presence of the signal received at the input to the device when the device is in the second operational state; andreturning to the first operational state if it is determined that the signal is no longer present at the input to the device.3. The method of claim 1 , wherein the first operational state is active standby and the second operational state is signal pass through.4. The method of claim 1 , further comprising entering a third operational state from the first operational state after not detecting the presence of the signal at the ...

METHOD AND APPARATUS FOR ELECTRONIC CONTENT REPLACEMENT BASED ON RATING

The present principles of the embodiments generally relate to an apparatus and a method for processing and/or displaying of electronic book and/or web media content. In one exemplary embodiment, the present invention is able to process text of an electronic book or a web page and replaces any word or phrase in the electronic media dynamically based on a selected rating level of an electronic device, such e.g., an electronic reader, cell phone or a tablet. In another exemplary embodiment, the words or phrases associated with a selected rating level and the associated lists of their replacements may be modifiable by a user, so customized lists of terms may be used with different user rating levels. 1. A method for displaying a file in an electronic device , the method comprising:receiving a first user input for selecting a first rating level of a plurality of rating levels associated with the electronic device;processing a first file containing a plurality of words by searching for a first term in the first file according to a first list of words, the first list of words associated with the selected first rating level, the first list of words being modifiable by a user;replacing the first term in the first file with a second term found in searching a second list of words to form a modified first file, the second term associated with the first term, wherein the second list of words is associated with the selected first rating level; anddisplaying the modified first file.2. The method of wherein the second list of words being modifiable by the user.3. The method of wherein the first term comprising one of: 1) a word claim 2 , and 2) a phrase containing more than one words.4. The method of wherein the second term comprising one of: 1) a word claim 3 , 2) a phrase containing more than one word claim 3 , and 3) a blank.5. The method of wherein the corresponding second term is selected based on usage context of the first term in the first file.6. The method of further ...

Systems and Methods for Optimizing Media Read Times

The various embodiments described herein include methods, systems, and devices for optimizing media read times. In one aspect, a method is performed at a device at a storage device with one or more processors and memory coupled to the one or more processors. The method includes: (i) predicting a read frequency for particular data; (ii) based on the predicted read frequency, determining one or more preferred storage locations within the memory; and (iii) storing the particular data in a preferred storage location of the one or more preferred storage locations. 1. A method of optimizing read latency , comprising: predicting a read frequency for particular data;', 'based on the predicted read frequency, determining one or more preferred storage locations within the memory; and', 'storing the particular data in a preferred storage location of the one or more preferred storage locations., 'at a storage device with one or more processors and memory coupled to the one or more processors2. The method of claim 1 , wherein predicting the read frequency for the particular data comprises predicting the read frequency for the particular data based on an amount of read disturbs associated with the particular data.3. The method of claim 1 , further comprising obtaining the particular data from a host system;wherein predicting the read frequency for the particular data comprises obtaining read frequency information from the host system.4. The method of claim 1 , further comprising tracking a number of read operations corresponding to a particular region of a plurality of regions in a logical address space of a host;wherein the particular data corresponds to a particular region of the plurality of regions; andwherein predicting the read frequency for the particular data comprises predicting the read frequency for the particular data based on the tracked number of read operations.5. The method of claim 1 , wherein the predicted read frequency indicates that the particular data is hot ...

Two-Layer Code with Low Parity Cost for Memory Sub-Systems

A memory sub-system configured to encode data using an error correcting code and an erasure code for storing data into memory cells and to decode data retrieved from the memory cells. For example, the data units of a predetermined size are separately encoded using the error correcting code (e.g., a low-density parity-check (LDPC) code) to generate parity data of a first layer. Symbols within the data units are cross encoded using the erasure code. Parity symbols of a second layer are calculated according to the erasure code. A collection of parity symbols having a total size equal to the predetermined size can be further encoded using the error correcting code to generate parity data for the parity symbols. 1. A method , comprising:splitting data received from a host system into data units according to a predetermined size of payload for an error correcting code;encoding each respective data unit of the size of payload using the error correcting code to generate parity data of a first layer;encoding symbols within the data units using an erasure code;calculating parity symbols of a second layer according to the erasure code; andencoding the parity symbols using the error correcting code to generate parity data for the parity symbols.2. The method of claim 1 , wherein the error correcting code is a low-density parity-check (LDPC) code.3. The method of claim 2 , wherein the parity symbols are grouped according to the predetermined size of payload for encoding using the error correcting code to generate the parity data for the parity symbols.4. The method of claim 2 , further comprising:storing the symbols of the data units, the parity data of the first layer, the parity symbols, and the parity data for the parity symbols in separate planes in one or more integrated circuit dies.5. The method of claim 4 , wherein among the parity symbols each respective parity symbol stored in a plane is generated based on a portion of the symbols of the data units that is stored in a ...

Management of Programming Mode Transitions to Accommodate a Constant Size of Data Transfer between a Host System and a Memory Sub-System

A memory sub-system configured to manage programming mode transitions to accommodate a constant size of data transfer between a host system and a memory sub-system. The memory sub-system counts single-page transitions of atomic programming modes performed within a memory sub-system and determines whether or not to allow any two-page transition of atomic programming modes based on whether an odd or even number of the single-page transitions have been counted. When an odd number of the transitions have been counted, no two-page transition is allowed; otherwise, one or more two-page transitions are allowable. A next transition of atomic programming modes is selected based on the determining of whether or not to allow any two-page transitions. 1. A method , comprising:counting single-page transitions of atomic programming modes performed within a memory sub-system, wherein each of the single-page transitions results in atomic programming of a single page of data of a predetermined size in the memory sub-system;determining whether an odd or even number of the single-page transitions have been counted; when an odd number of the transitions have been counted, no two-page transition of atomic programming modes that results in atomic programming of two pages of the predetermined size is allowed; and', 'when an even number of the transitions have been counted, at least one two-page transition of atomic programming modes that results in atomic programming of two pages of the predetermined size are allowable; and, 'determining whether or not to allow any two-page transition of atomic programming modes that results in atomic programming of two pages of data, each having the predetermined size, whereinselecting a transition of atomic programming modes based on the determining of whether or not to allow any two-page transition of atomic programming modes.2. The method of claim 1 , further comprising:performing multi-pass programming of a set of pages via a plurality of atomic ...

Methanol synthesis process

A methanol synthesis process is described, which comprises reacting a process gas containing hydrogen, carbon dioxide and carbon monoxide over a catalyst comprising shaped units formed from a reduced and passivated catalyst powder said powder comprising copper in the range 10-80% by weight, zinc oxide in the range 20-90% by weight, alumina in the range 5-60% by weight and optionally one or more oxidic promoter compounds selected from compounds of Mg, Cr, Mn, V, Ti, Zr, Ta, Mo, W, Si and rare earths in the range 0.01 - 10% by weight, to form a product gas, and condensing methanol, water and oxygenate by-products therefrom, wherein the total oxygenate by-product level in the condensate is below 500ppm.

Methanol synthesis process

A methanol synthesis process is described, which comprises reacting a process gas containing hydrogen, carbon dioxide and carbon monoxide over a catalyst comprising shaped units formed from a reduced and passivated catalyst powder said powder comprising copper in the range 10-80% by weight, zinc oxide in the range 20-90% by weight, alumina in the range 5-60% by weight and optionally one or more oxidic promoter compounds selected from compounds of Mg, Cr, Mn, V, Ti, Zr, Ta, Mo, W, Si and rare earths in the range 0.01 - 10% by weight, to form a product gas, and condensing methanol, water and oxygenate by-products therefrom, wherein the total oxygenate by-product level in the condensate is below 500ppm.

Six port linear network single wire multi switch transceiver

A fluid sensor comprises a sensor housing ( 12 ), a sensor package ( 14 ), an actuator ( 16 ) and a switch ( 18 ). The sensor package ( 14 ) is disposed within the sensor housing ( 12 ) and includes first and second screens and at least one sensing membrane. The sensing membrane is disposed between the first and second screens ( 36 ) and is adapted to expand when exposed to a predetermined quantity of a first predetermined fluid. The actuator ( 16 ) is disposed proximate the sensor package ( 14 ) within the sensor housing ( 12 ) and moveable between a first position and a second position through an intermediate position. The switch ( 18 ) is disposed proximate the actuator ( 16 ) and is operable between closed and open positions. When the actuator ( 16 ) is in the second position at least a portion of the actuator ( 16 ) depresses the switch ( 18 ) to control an-electrical, circuit connected therewith.

Watering device

Sequencing content

Several implementations provide a system for sequencing, or cueing, content for presentation to an audience. One such implementation provides a low bit-rate system for use with, for example, a tablet. One particular implementation constructs a display plane including a first content source window indicating content from a first content source, and a timeline for sequencing the first content source into a presentation for a presentation device. The display plane is provided to a remote device, and command information is received from the remote device. The command information is for modifying the display plane. The display plane is modified based on the received command information. Another particular implementation receives the display plane, determines command information for modifying the display plane, and provides the command information to the remote device for modifying the display plane.

PACKAGING OF GOODS

Methanol synthesis

Methanol synthesis in a synthesis loop having at least two synthesis stages wherein methanol is synthesised from recycled unreacted gas, optionally together with part of the make-up gas, in one or more synthesis stages to give a stream of reacted gas, make-up gas is then added and prior to separation of the synthesised methanol, a further amount of methanol is synthesised from the resultant mixture in one or more further synthesis stages, with at least the final synthesis stage of the loop being effected in indirect heat exchange with pressurised water as a coolant. Preferably the pressurised hot water from the final synthesis stage of the loop is employed to saturate a hydrocarbon feedstock from which the make-up gas is produced by steam reforming.

Electromagnetic signal receiver and processor for providing frequency data of received signals

ABSTRACT OF THE DISCLOSURE An electromagnetic signal receiver and processor including an IFM receiver connected directly to an antenna for developing frequency data, a pulse status unit also directly connected to the antenna for developing, inter alia, a control signal when the pulse of the received electromagnetic signal exceeds a preselected width, and an IFT receiver which is connected to the antenna through a delay and a blanking network, in that order. The blanking network is controlled by the control signal, and is unblanked when the pulse width of the received electromagnetic signal is greater than the preselected width to allow the delayed signal to be processed by the IFT receiver. A memory stores selected frequencies for comparison with the frequency data developed by the IFM receiver. A further control signal is developed by the network, which compares the output of the IFM receiver and the frequency data stored in memory to control the blanking network.

Adaptive impedance for lnb power supply output in dependence on communication mode/protocol

A method for selecting antenna configurations in a satellite receiving system, the method comprising : selecting antenna configurations using a first mode of operation wherein frequency shift keying ('FSK') of a frequency is implemented, or a second mode of operation wherein a DC level is implemented, and adaptively controlling a capacitor to condition a signal while the second mode is in use and removing the effects of the capacitor while the first mode is in use.

Two stage surge protector for single wire multi switch transceiver

An architecture for protecting circuitry used for signal communications between a frequency translation module (20) and a decoder (60) from transient voltage surges. According to an exemplary embodiment, the apparatus comprises a first signal path between a transmission line and a first reference potential, comprising a high impedance negative surge path; and a second signal path between the transmission line and the first reference potential, comprising a high impedance positive surge path, a low inductance surge path and a DC blocker circuit, wherein said high impedance positive surge path is configured in series with said low inductance surge path and said DC blocker circuit, wherein each of said low inductance surge path and said DC blocker circuit are coupled between said high impedance positive surge path and said source of reference potential.

Palletising and wrapping stacked carcasses or flowable materials.

An apparatus for palletising and wrapping a load of material which may be irregularly shaped solid articles; liquid or flowable granules comprising a support base (10, 30) and an open upstanding framework (12, 44) adapted to form a volume to be at least partially filled with articles, wherein said framework (12, 44) provides a formwork for plastic film (41) wrapped there around at least on its vertical periphery.

Method and apparatus for spectral analysis in a disk recording system

Converter for positioning a continuously rotatable shaft utilizing cyclic digital information

A servomechanism for converting cyclic digital information to a continuously rotating shaft position is controlled by an error signal derived by comparing the voltage analog of the cyclic digital information and the voltage obtained from a selected one of two potentiometers, both of which have wiper arms which rotate in unison with the continuously rotating shaft. A level comparator controlled by signals from the converter which changes the digital information to an analog signal is used to select which potentiometer is connected to the servoamplifier.

Chain saw sharpening device

Methanol process

A PROCESS IS DESCRIBED FOR THE SYNTHESIS OF METHANOL COMPRISING THE STEPS OF: (A) PASSING A SYNTHESIS GAS MIXTURE COMPRISING A LOOP GAS AND A MAKEUP GAS THOUGH A FIRST SYNTHESIS REACTOR CONTAINING A METHANOL SYNTHESIS CATALYST, SAID REACTOR COOLED BY BOILING WATER UNDER PRESSURE, TO FORM A MIXED GAS CONTAINING METHANOL, (B) COOLING THE MIXED GAS CONTAINING METHANOL, (C) PASSING SAID COOLED MIXED GAS CONTAINING METHANOL THROUGH A SECOND SYNTHESIS REACTOR CONTAINING A METHANOL SYNTHESIS CATALYST IN WHICH FURTHER METHANOL IS SYNTHESISED TO FORM A PRODUCT GAS STREAM, (D) COOLING SAID PRODUCT GAS TO CONDENSE METHANOL, (E) RECOVERING SAID METHANOL AND RETURNING UNREACTED GAS AS THE LOOP GAS TO SAID FIRST SYNTHESIS REACTOR, WHEREIN THE MIXED GAS CONTAINING METHANOL FROM THE FIRST SYNTHESIS REACTOR IS COOLED IN HEAT EXCHANGE WITH EITHER SAID LOOP GAS OR SAID MAKE UP GAS. PREFERABLY THE MAKE UP GAS, PRIOR TO COMBINATION WITH SAID LOOP GAS, IS HEATED IN HEAT EXCHANGE WITH EITHER SAID MIXED GAS CONTAINING METHANOL FROM THE FIRST SYNTHESIS REACTOR OR SAID PRODUCT GAS, AND THEN PASSED THOUGH A BED OF DESULPHURISATION MATERIAL.

MAGNETIC SIGNAL RECEIVER AND PROCESSOR FOR PROVIDING FREQUENCY DATA OF SIGNALS RECEIVED

CE RECEPTEUR COMPREND UN RECEPTEUR IFM22 CONNECTE A UNE ANTENNE, UNE UNITE D'ETAT D'IMPULSIONS 54 CONNECTEE A L'ANTENNE 12 POUR DEVELOPPER UN SIGNAL DE COMMANDE LORSQUE L'IMPULSION DU SIGNAL RECU DEPASSE UNE CERTAINE LARGEUR, UN RECEPTEUR IFT 52 CONNECTE A L'ANTENNE 12 A TRAVERS UNE UNITE DE RETARD ET UN RESEAU SUPPRESSEUR 44 HABILITE LORSQUE LA LARGEUR DES IMPULSIONS RECUES DEPASSE LA LARGEUR PREVUE POUR LE TRAITEMENT DU SIGNAL RETARDE PAR LE RECEPTEUR 52. UNE MEMOIRE ACCUMULE LES FREQUENCES SELECTIONNEES POUR LA COMPARAISON AVEC LES DONNEES DE FREQUENCES DEVELOPPEES PAR LE RECEPTEUR 22. UN AUTRE SIGNAL DE COMMANDE EST DEVELOPPE PAR LE RESEAU POUR COMPARER LA SORTIE DU RECEPTEUR 22 ET LES DONNEES DE FREQUENCES DE LA MEMOIRE 56 POUR LA COMMANDE DU RESEAU 44. L'INVENTION PERMET DE TRAITER DES SIGNAUX COMPRENANT DES IMPULSIONS DE COURTE ET DE LONGUE DUREE QUI COMPRENNENT DES SIGNAUX EN ONDE CONTINUE CW. THIS RECEIVER INCLUDES AN IFM22 RECEIVER CONNECTED TO AN ANTENNA, A PULSE STATUS UNIT 54 CONNECTED TO ANTENNA 12 TO DEVELOP A CONTROL SIGNAL WHEN THE PULSE OF THE RECEIVED SIGNAL EXCEEDS A CERTAIN WIDTH, AN IFT 52 RECEIVER CONNECTED TO THE ANTENNA 12 THROUGH A DELAY UNIT AND A SUPPRESSOR NETWORK 44 ENABLED WHEN THE WIDTH OF THE PULSES RECEIVED EXCEEDS THE WIDTH PROVIDED FOR THE PROCESSING OF THE DELAYED SIGNAL BY THE RECEIVER 52. A MEMORY ACCUMULATES THE FREQUENCIES SELECTED FOR THE COMPARISON OF THE FREQUENCIES DEVELOPED BY RECEIVER 22. ANOTHER CONTROL SIGNAL IS DEVELOPED BY THE NETWORK TO COMPARE THE OUTPUT OF RECEIVER 22 AND FREQUENCY DATA IN MEMORY 56 FOR THE CONTROL OF THE NETWORK 44. THE INVENTION ALLOWS SIGNALS INCLUDING SHORT AND LONG-TERM PULSES THAT INCLUDE CW CONTINUOUS WAVE SIGNALS.

Electronic system with storage management mechanism and method of operation thereof

A method of operation of an electronic system includes: forming a superblock by organizing an erase block according to a wear attribute; detecting a trigger count of the wear attribute of the superblock; updating a metadata table with the trigger count; and triggering a recycling event of the superblock based on the metadata table.