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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 15. Отображено 15.
01-09-1998 дата публикации

Tandem solar cell with indium phosphide tunnel junction

Номер: US0005800630A1
Принадлежит: University of Houston

A monolithic, tandem photovoltaic device is provided having an indium phosphide tunnel junction lattice-matched to adjoining subcells and having high peak current densities and low electrical resistance. A method is provided for relatively low-temperature epitaxial growth of a tunnel junction and a subcell over the tunnel junction at temperatures which leave intact the desirable characteristics of the tunnel junction.

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18-04-1995 дата публикации

Tandem solar cell with improved tunnel junction

Номер: US0005407491A1
Принадлежит: University of Houston

A monolithic, tandem photovoltaic device is provided having an indium gallium arsenide tunnel junction lattice-matched to adjoining subcells and having high peak current densities and low electrical resistance. A method is provided for relatively low-temperature epitaxial growth of a subcell over the tunnel junction at temperatures which leave intact the desirable characteristics of the tunnel junction.

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14-11-2000 дата публикации

Multi-quantum well tandem solar cell

Номер: US0006147296A1
Автор: Freundlich; Alexandre
Принадлежит: University of Houston

A two-terminal tandem solar cell is provided. The inclusion of thin (few nm-thick) narrow band-gap InGaAs quantum wells in the intrinsic (i) region of the conventional p-i-n GaAs solar cell extends the photo-absorption of the conventional GaInP/GaAs tandem cell toward the infrared. Beginning-of-Life efficiencies in excess of 30% are predicted. Modeling data indicate end-of-life efficiency of these cells will exceed 25% AM0.

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22-12-1998 дата публикации

Strained quantum well photovoltaic energy converter

Номер: US0005851310A1
Принадлежит: University of Houston

An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

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29-03-2012 дата публикации

Long wavelength infrared sensor materials and method of synthesis thereof

Номер: US20120074462A1
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

A dilute nitrogen alloy of InN x Sb 1-x epilayers strained to an epitaxial substrate useful for Long Wavelength Infrared (LWIR) Focal Plane Arrays, and method of fabricating. Strained materials of composition InN x Sb 1-x exhibiting increased Auger lifetimes and improved absorption properties.

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04-07-2013 дата публикации

OPTOELECTRONIC DEVICE COMPRISING NANOSTRUCTURES OF HEXAGONAL TYPE CRYSTALS

Номер: US20130168725A1
Принадлежит:

An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group. 1. An optoelectronic device comprising:a first conductive layer,a second conductive layer,an active layer between the first conductive layer and the second conductive layer, whereinthe active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.2. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a layer structure.3. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a filament structure.4. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals have a dot structure.5. The optoelectronic device according to claim 1 , wherein at least parts of the nanostructures of hexagonal type crystals are under a strain in at least in one direction.6. The optoelectronic device according to claim 1 , wherein the active layer has a thickness greater or equal to 10 nm and less than or equal to 1000 nm.7. The optoelectronic device according to claim 1 , wherein the element of the carbon group is silicon.8. The optoelectronic device according to claim 1 , wherein the electronic affinity of the first conductive layer is lower less than the electronic affinity of the active layer and the ionisation energy of the second conductive layer is greater than the ionisation energy of the active layer.9. The optoelectronic device according to claim 8 , wherein the optoelectronic device further comprises between the active layer and the first conductive layer a first ...

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25-07-2013 дата публикации

THERMO-TUNNELING DESIGN FOR QUANTUM WELL PHOTOVOLTAIC CONVERTER

Номер: US20130186458A1
Принадлежит: THE UNIVERSITY OF HOUSTON SYSTEM

A design of a quantum well region that allows faster and more efficient carrier collection in quantum well solar cells. It is shown that for a quantum well material system displaying a negligible valence band offset, the conduction band confinement energies and barrier thicknesses can be designed to favor a sequential thermionic promotion and resonant tunneling of electrons to the conduction band continuum resulting in faster carrier collection rates than for a conventional design. An evaluation of the proposed design in the context of devices incorporating GaAs/GaAsN quantum wells shows a collection of all photo-generated carriers within several to tenths of ps (10s) from deep quantum wells rather than several ns, as it is the case for conventional designs. The incorporation of the proposed design in single and multijunction solar cells is evaluated with efficiency enhancements. 1. A multi-quantum well solar cell comprising:two or more subcells incorporated into the intrinsic region of a GaAs p-i-n solar cell;wherein each subcell comprises at least a first quantum well and a second quantum well; andwherein the first quantum well and the second quantum well are resonantly coupled.2. The multi-quantum well solar cell of claim 1 , wherein the energy levels of the quantum wells are optimized to facilitate electronic escape using both thermoionic and quantum tunneling.3. The multi-quantum well solar cell of claim 1 , wherein the conversion efficiency of the solar cell is in excess of 35% at AM0.4. The multi-quantum well solar cell of claim 1 , wherein collection of photo-generated carriers occurs within 0.1 to 10 ps.5. A multi-quantum well solar cell comprising: [{'sub': 0.982', '0.018', '0.982', '0.018', '0.982', '0.018, 'wherein each subcell comprises a first quantum well consisting of 30 monolayers of GaAsN, a second quantum well consisting of 12 monolayers of GaAsN, and a third quantum well consisting of 3 monolayers of GaAsN;'}, 'wherein the first quantum well is ...

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29-10-1992 дата публикации

Hetero-epitaxial structure including buffer layer - for adjusting or eliminating residual stress in epitaxial layer

Номер: DE4211970A1
Принадлежит: Telefunken Systemtechnik AG

In a hetero-epitaxial structure having a semiconductive or crystalline non-conductive substrate and an epitaxial crystalline semiconductive surface layer held under a desired stress, a buffer layer, of semiconductive material different from the substrate and surface layer materials and of thickness greater than the critical thickness of the substrate, is located between the substrate and the surface layer and in contact with the surface layer for determining the residual stress of the surface layer at a desired temp. in dependence on the lattice parameters and thermo-elastic coefficients of the substrate and surface layer materials. Prodn. of the structure is also claimed. USE/ADVANTAGE - The structure is used in prodn. of opto- electronic, micro-electronic or photovoltaic devices (claimed). The buffer layer allows adjustment or even elimination of stress in the epitaxial layer.

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30-10-1992 дата публикации

SEMICONDUCTOR MATERIALS WITH HETEROEPITAXIC STRUCTURE AND CONTROLLED STRESS, THEIR METHOD OF PRODUCTION AND THEIR APPLICATIONS.

Номер: FR2675948A1

L'invention concerne un nouveau matériau hétéroépitaxié comprenant un support constitué d'un matériau semi-conducteur ou isolant cristallin (A) et une couche de surface épitaxiée sous contrainte contrôlée constituée d'un matériau semi-conducteur cristallin (C), et, entre ces deux couches et directement en contact avec la couche de surface, une couche dite couche-tampon en matériau semi-conducteur (B) différent des matériaux A et C d'épaisseur supérieure à l'épaisseur critique (hc ) imposée par le matériau (A). Le choix du matériau (B) permet de contrôler la contrainte résiduelle de la couche de surface à la température souhaitée, indépendamment des paramètres cristallins des matériaux (A) et (C) et de leurs coefficients thermoélastiques. Les matériaux de l'invention sont applicables pour la fabrication de composants optoélectroniques, microélectroniques ou photovoltaïques. The invention relates to a novel heteroepitaxial material comprising a support made of a crystalline semiconductor or insulating material (A) and an epitaxial surface layer under controlled stress made of a crystalline semiconductor material (C), and, between these two layers and directly in contact with the surface layer, a so-called buffer layer in semiconductor material (B) different from materials A and C with a thickness greater than the critical thickness (hc) imposed by the material ( AT). The choice of material (B) makes it possible to control the residual stress of the surface layer at the desired temperature, independently of the crystalline parameters of the materials (A) and (C) and of their thermoelastic coefficients. The materials of the invention are applicable for the manufacture of optoelectronic, microelectronic or photovoltaic components.

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17-07-2013 дата публикации

An optoelectronic device comprising nanostructures of hexagonal type crystals

Номер: EP2614535A1

An optoelectronic device comprising: - a first conductive layer (22), - a second conductive layer (24), - an active layer (26) between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

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30-08-2016 дата публикации

An optoelectronic device comprising nanostructures of hexagonal type crystals

Номер: CA2810371C

An optoelectronic device comprising: - a first conductive layer (22), - a second conductive layer (24), - an active layer (26) between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

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11-04-2013 дата публикации

An optoelectronic device comprising nanostructures of hexagonal type crystals

Номер: AU2010360267A1

An optoelectronic device comprising: - a first conductive layer (22), - a second conductive layer (24), - an active layer (26) between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

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18-04-2017 дата публикации

Optoelectronic device comprising nanostructures of hexagonal type crystals

Номер: US09627564B2

An optoelectronic device comprising: a first conductive layer, a second conductive layer, an active layer between the first conductive layer and the second conductive layer, wherein the active layer comprises a submicrometer size structure of hexagonal type crystals of an element or alloy of elements selected from the carbon group.

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20-09-2016 дата публикации

Thermo-tunneling design for quantum well photovoltaic converter

Номер: US09450123B2
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

A design of a quantum well region that allows faster and more efficient carrier collection in quantum well solar cells. It is shown that for a quantum well material system displaying a negligible valence band offset, the conduction band confinement energies and barrier thicknesses can be designed to favor a sequential thermionic promotion and resonant tunneling of electrons to the conduction band continuum resulting in faster carrier collection rates than for a conventional design. An evaluation of the proposed design in the context of devices incorporating GaAs/GaAsN quantum wells shows a collection of all photo-generated carriers within several to tenths of ps (10 −12 s) from deep quantum wells rather than several ns, as it is the case for conventional designs. The incorporation of the proposed design in single and multijunction solar cells is evaluated with efficiency enhancements.

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30-08-2016 дата публикации

Long wavelength infrared sensor materials and method of synthesis thereof

Номер: US09431556B2
Принадлежит: UNIVERSITY OF HOUSTON SYSTEM

A dilute nitrogen alloy of InN x Sb 1-x epilayers strained to an epitaxial substrate useful for Long Wavelength Infrared (LWIR) Focal Plane Arrays, and method of fabricating. Strained materials of composition InN x Sb 1-x exhibiting increased Auger lifetimes and improved absorption properties.

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