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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Применить Всего найдено 20. Отображено 19.
31-12-2015 дата публикации

SEMICONDUCTOR CHIP AND METHOD OF MANUFACTURING THE SAME

Номер: US20150380367A1
Автор: Fucheng CHEN
Принадлежит: Semiconductor Manufacturing International Shanghai Corp

A chip includes a substrate and a dielectric layer disposed on the substrate. The dielectric layer includes a first dielectric region and a second dielectric region surrounding an outer periphery of the first dielectric region. A top surface of the first dielectric region is disposed below a top surface of the second dielectric region. The chip further includes a metal pad disposed in a through-hole in the first dielectric region and contacting a portion of the substrate.

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Номер записи: 1
02-07-2015 дата публикации

SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

Номер: US20150187736A1
Автор: Fucheng CHEN, Yao LIU, Herb He HUANG
Принадлежит:

A method for manufacturing a semiconductor device may include providing a first dielectric layer and a first set of conductive pads on a first substrate. Each conductive pad of the first set of conductive pads may be positioned between portions of the first dielectric layer. The method may further include providing a first insulating material layer to cover the first dielectric layer and the first set of conductive pads. The method may further include removing portions of the first insulating material layer to form a first insulating layer. Openings of the first insulating layer may expose the first set of conductive pads. 1. A method for manufacturing a semiconductor device , the method comprising:providing a first dielectric layer and a first set of conductive pads on a first substrate, each conductive pad of the first set of conductive pads being positioned between portions of the first dielectric layer;providing a first insulating material layer to cover the first dielectric layer and the first set of conductive pads; andremoving portions of the first insulating material layer to form a first insulating layer, opening of the first insulating layer exposing the first set of conductive pads.2. The method of claim 1 , wherein the first insulating layer includes at least one of a benzocyclobutene material and a silicone-polymer material.3. The method of claim 1 , further comprising:forming a first dielectric material layer on the first substrate; andetching the first dielectric material layer to form the first dielectric layer, wherein a thickness of the first dielectric layer is less than a thickness of the first dielectric material layer.4. The method of claim 1 , wherein the first insulating material layer is formed on the first dielectric layer and the first set of conductive pads through spin coating.5. The method of claim 1 , wherein the openings includes a first opening claim 1 , wherein the first set of conductive pads includes a first conductive pad exposed ...

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Номер записи: 2
02-07-2015 дата публикации

SUBSTRATE, RELATED DEVICE, AND RELATED MANUFACTURING METHOD

Номер: US20150185418A1
Автор: Fucheng CHEN, Herb He HUANG
Принадлежит:

A method for manufacturing a substrate may include processing a substrate material member to form a first remaining portion. The first remaining portion has a first cavity. A sidewall the first cavity is oriented at a first angle with respect to at least one of a horizontal plane and a bottom side of the first remaining portion. The method may further include providing a sacrificial material member in the first cavity. The method may further include processing the sacrificial material member when processing the first remaining portion to remove the sacrificial material member and to form a second remaining portion. The second remaining portion has a second cavity. A sidewall the second cavity is oriented at a second angle with respect to at least one of the horizontal plane and a bottom side of the second remaining portion. The second angle is smaller than the first angle. 1. A method for manufacturing a substrate , the method comprising:processing a substrate material member to form a first remaining portion of the substrate material member, wherein the first remaining portion of the substrate material member has a first cavity, wherein a sidewall the first cavity is oriented at a first angle with respect to at least one of a horizontal plane, a bottom surface of the first cavity, and a bottom side of the first remaining portion of the substrate material member;providing a sacrificial material member in the first cavity; andprocessing the sacrificial material member when processing the first remaining portion of the substrate material member to remove the sacrificial material member and to form a second remaining portion of the substrate material member, wherein the second remaining portion of the substrate material member has a second cavity, wherein a sidewall the second cavity is oriented at a second angle with respect to at least one of the horizontal plane, a bottom surface of the second cavity, and a bottom side of the second remaining portion of the ...

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Номер записи: 3
29-09-2011 дата публикации

TERMINAL BOX FOR CENTRIFUGAL SWITCH OF MOTOR AND MOTOR WITH THE SAME

Номер: US20110234030A1
Автор: Fucheng CHEN, Ping LU, Shuangchao DENG, Xiao LIU, CHEN FUCHENG, LU PING, DENG SHUANGCHAO, LIU XIAO
Принадлежит: ZHONGSHAN BROAD-OCEAN MOTOR CO., LTD.

A terminal box, including at least a box ( 51 ) having a receiving part ( 10 ), a movable control rod ( 7 ), multiple electric contacts ( 8 ), a thermostat ( 9 ) having a terminal ( 91 ), and a wiring mechanism ( 12 ). The movable control rod ( 7 ) is disposed on the box ( 51 ) and partially extends therefrom. The electric contacts ( 8 ) are disposed in the box ( 51 ). The thermostat ( 9 ) is disposed on end surface of the box ( 51 ). The receiving part ( 10 ) operates to receive the thermostat ( 9 ). One end of the electric contact ( 8 ) extends from the box ( 51 ) and forms a connecting part ( 81 ). A separating plate ( 11 ) is disposed between the connecting part ( 81 ) and the thermostat ( 9 ). One end of the wiring mechanism ( 12 ) is connected to the connecting part ( 81 ), and the other end thereof bypasses the outside of the separating plate ( 11 ) and is connected to the terminal ( 91 ). If the thermostat experiences temperature detection failure, users of the motor can easily remove the wiring mechanism, and timely switch off the power supply connected to the motor via an external protection circuit thereby preventing the motor from being burned out.

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Номер записи: 4
01-09-2011 дата публикации

TERMINAL BOX FOR CENTRIFUGAL SWITCH OF MOTOR

Номер: US20110211298A1
Автор: Ping LU, Fucheng CHEN, LU PING, CHEN FUCHENG
Принадлежит: ZHONGSHAN BROAD-OCEAN MOTOR CO., LTD.

A terminal box for a centrifugal switch of a motor, having at least a housing, a movable control rod extending from the housing, a cavity disposed on end surface of the housing, and a thermostat disposed in the cavity. A protruding block is disposed on the inner wall of the cavity. A reversed hook is disposed on outer side wall of the thermostat. The bottom of the protruding block abuts against the top of the reversed hook whereby fixing the thermostat in the cavity. The invention effectively simplifies the installation structure of the thermostat and the cavity; the overall installation structure is simple and stable, the cost of the structure is low, and structure of electrical connection in the terminal box is simple and reliable.

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Номер записи: 5
18-04-2013 дата публикации

METHOD OF INSERTING DUMMY PATTERNS

Номер: US20130097570A1
Автор: Chen Fucheng
Принадлежит: SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD

A method of inserting dummy patterns is provided. The method includes: determining an applicable area in which dummy patterns shall be inserted and an inapplicable area in which dummy patterns shall not be inserted on a chip; and inserting dummy patterns starting from one side of the inapplicable area and arranging the inserted dummy patterns into circles. The method of the present invention ensures that dummy patters are preferentially inserted around the device that requires protection by dummy patterns, so that good uniformity of chip pattern densities is guaranteed and within-wafer uniformity is improved, thus improving the yield and performance of semiconductor devices. 1. A method of inserting dummy patterns , comprising the following steps:determining an applicable area in which dummy patterns shall be inserted and an inapplicable area in which dummy patterns shall not be inserted on a chip; andinserting dummy patterns starting from one side of the inapplicable area and arranging the inserted dummy patterns into circles.2. The method according to claim 1 , wherein the chip includes only one inapplicable area claim 1 , the dummy patterns being equidistantly inserted starting from one side of the inapplicable area.3. The method according to claim 1 , wherein the chip includes two adjacent inapplicable areas and a shortest perpendicular distance is provided between two sides of the inapplicable areas facing each other; if the shortest perpendicular distance can accommodate an even number of dummy patterns claim 1 , the dummy patterns are inserted starting from the two sides of the inapplicable areas facing each other.4. The method according to claim 1 , wherein the chip includes two adjacent inapplicable areas and a shortest perpendicular distance is provided between two sides of the inapplicable areas facing each other; if the shortest perpendicular distance can accommodate an odd number of dummy patterns claim 1 , the dummy patterns are inserted starting from ...

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Номер записи: 6
07-03-2019 дата публикации

METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS

Номер: US20190074323A1
Автор: Chen Fucheng, SHI LINBO
Принадлежит:

The present disclosure relates to the field of semiconductor technologies, and discloses a method for manufacturing a semiconductor apparatus. The method includes: forming a water film on a bottom surface of a top wafer and a top surface of a bottom wafer; after the water film is formed, attaching the bottom surface of the top wafer to the top surface of the bottom wafer; disposing the attached top wafer and bottom wafer in a vacuum environment; and performing a thermal annealing process, so that the bottom surface of the top wafer is fusion-bonded to the top surface of the bottom wafer. The disclosed methods can reduce bubble voids existing between the bonded wafers. 1. A method for manufacturing a semiconductor apparatus , comprising:forming a water film on a bottom surface of a top wafer and a top surface of a bottom wafer;after the water film is formed, attaching the bottom surface of the top wafer to the top surface of the bottom wafer;disposing the attached top wafer and bottom wafer in a vacuum environment; andperforming a thermal annealing process, so that the bottom surface of the top wafer is fusion-bonded to the top surface of the bottom wafer.2. The method according to claim 1 , wherein pressure intensity in the vacuum environment is 0.0001 mBar to 0.1 mBar.3. The method according to claim 2 , wherein a duration period in the vacuum environment is 0.5 h to 2 h.4. The method according to claim 1 , further comprising:before the water film is formed, performing hydrophilic treatment on the bottom surface of the top wafer and the top surface of the bottom wafer.5. The method according to claim 4 , wherein the hydrophilic treatment comprises plasma treatment.6. The method according to claim 5 , wherein treatment conditions of the plasma treatment comprise:vacuum pressure intensity being less than 1 mBar;a treatment time being 15 s to 90 s;power being 50 W to 200 W; anda treatment atmosphere comprising nitrogen.7. The method according to claim 1 , wherein ...

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Номер записи: 7
23-03-2017 дата публикации

BONDING PAD STRUCTURE, BONDING RING STRUCTURE, AND MEMS DEVICE PACKAGING METHOD

Номер: US20170084557A1
Автор: Chen Fucheng, LIU Yao, SHI LINBO
Принадлежит:

The present disclosure provides bond pad structures, boning ring structure; and MEMS device packaging methods. An exemplary bonding pad structure includes a plurality of first metal blocks made of a first metal material; and a plurality of second metal blocks made of a second metal material. The plurality of first metal blocks are used to prevent the squeezing out and extending of the plurality of second metal blocks. On at least one equal dividing plane of the bonding pad structure, the first metal material is shown at least one time; and the second metal material is shown at least one time. 1. A bonding pad structure , comprising:a plurality of first metal blocks made of a first metal material; anda plurality of second metal blocks made of a second metal material, the plurality of first metal blocks are used to protect squeezing out and extending of the second metal blocks; and', 'on at least one equal dividing plane of the bonding pad structure the first metal material is shown at least one time and the second metal material is shown at least one time., 'wherein2. The bonding pad structure according to claim 1 , on top viewing plane claim 1 , wherein:the plurality of first metal blocks and the plurality of second metal blocks are distributed into columns and rows alternatively;one second metal block is disposed between two adjacent first metal blocks in each row; andone first metal block is disposed between two adjacent second metal blocks in each column.3. The bonding pad structure according to claim 2 , further comprising:a first metal ring enclosing the plurality of first metal blocks and the second metal blocks on a top viewing plane of the bonding pad structure.4. The bonding pad structure according to claim 1 , wherein:the plurality of first metal blocks are a plurality of first metal stripes;the plurality of second metal blocks are a plurality of metal stripes; andthe plurality of first metal stripes and the plurality of second metal stripes are ...

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Номер записи: 8
02-07-2015 дата публикации

METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI

Номер: US20150187794A1
Автор: Chen Fucheng, HUANG Herb He, JIN XINGCHENG, Li Haiting, WANG XINXUE, XIANG Yanghui, Zhao Hongbo
Принадлежит:

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors. 1. A method of forming a semiconductor device , the method comprising:providing a silicon-on-insulator (SOI) substrate having a first region and a second region, the SOI substrate including a first semiconductor substrate, a buried insulating layer, and a second semiconductor substrate sequentially formed thereon;forming a plurality of shallow trench isolation structures within the second semiconductor substrate in the first and second regions;forming a plurality of transistors on the second semiconductor substrate in the first and second regions;forming a hard mask layer over the second semiconductor substrate, the hard mask layer having an opening exposing a portion of the second semiconductor substrate in the second region;removing the transistors and shallow trench isolation structures disposed in the exposed portion of the second semiconductor substrate to form a deep trench isolation using the hard mask layer as a mask;removing the hard mask layer; andforming a dielectric capping layer covering a bottom and sidewalls of the deep trench isolation.2. The method of claim 1 , further comprising:forming a metal silicide layer over source/drain ...

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Номер записи: 9
25-08-2016 дата публикации

METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI

Номер: US20160247801A1
Автор: Chen Fucheng, HUANG Herb He, JIN XINGCHENG, Li Haiting, WANG XINXUE, XIANG Yanghui, Zhao Hongbo
Принадлежит:

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors. 1. A semiconductor device comprising:a silicon-on-insulator (SOI) substrate having a first region and a second region, the SOI substrate including a vertical stack of a first semiconductor substrate, a buried insulating layer, and a second semiconductor substrate arranged from bottom to top in the first region, respectively;a plurality of transistors on the second semiconductor substrate;a deep trench isolation exposing a surface of the first semiconductor substrate in the second region; anda dielectric capping layer over a bottom and sidewalls of the deep trench isolation and the second semiconductor substrate.2. The semiconductor device of claim 1 , wherein the dielectric capping layer comprises silicon nitride.3. The semiconductor device of claim 1 , wherein each of the transistors comprises a gate electrode claim 1 , source/drain regions disposed on opposite of the gate electrode claim 1 , and a metal silicide formed on a surface of the gate electrode and the source/drain regions.4. The semiconductor device of claim 1 , further comprising an ion implanted layer disposed at a bottom of the deep trench isolation.5. The semiconductor device of claim ...

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Номер записи: 10
10-09-2015 дата публикации

TOUCH PANEL

Номер: US20150253888A1
Автор: Bai Xiaoxin, Chang Pu-Hsin, Chen Fucheng, Hong Pudi, Li Jui-Hsing, Lin Manyi, Wei Tsai-Kuai, Wu Defa, Ye Caijin
Принадлежит:

A touch panel comprises a sensing area, a periphery area, a plurality of wires and a plurality of bonding pads. The periphery area is disposed around the sensing area. The periphery area comprises a bonding area. The wires are disposed in the periphery area. The bonding pads are disposed in the bonding area and electrical connected to the wires correspondingly. Each of the bonding pads comprises at least a bending portion. 1. A touch panel , comprising:a sensing area;a peripheral area disposed around the sensing area and comprising a bonding area;a plurality of wires disposed in the peripheral area; anda plurality of bonding pads disposed in the bonding area and electrically connected to the wires correspondingly, wherein each of the bonding pads comprises at least a bending portion.2. The touch panel of claim 1 , wherein the bonding pad comprises a plurality of bending portions.3. The touch panel of claim 1 , wherein at least a part of the bonding pads are disposed symmetrically.4. The touch panel of claim 1 , wherein an extension line of each of the wires and an edge of the sensing area adjacent to the bonding area form an obtuse angle.5. The touch panel of claim 1 , wherein an extension line of each of the bonding pads and an edge of the sensing area adjacent to the bonding area form an obtuse angle.6. The touch panel of claim 1 , further comprising:a circuit board correspondingly attached to the bonding pads in the bonding area.7. A touch panel claim 1 , comprising:a sensing area;a peripheral area disposed around the sensing area and comprising a bonding area;a plurality of wires disposed in the peripheral area; anda plurality of bonding pads disposed in the bonding area and electrically connected to the wires correspondingly, wherein an extension line of each of the wires and an edge of the sensing area adjacent to the bonding area form an obtuse angle.8. The touch panel of claim 7 , wherein each of the bonding pads comprises at least one bending portion.9. The ...

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Номер записи: 11
05-10-2017 дата публикации

METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI

Номер: US20170287908A9
Автор: Chen Fucheng, HUANG Herb He, JIN XINGCHENG, Li Haiting, WANG XINXUE, XIANG Yanghui, Zhao Hongbo
Принадлежит:

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors. 1. A semiconductor device comprising:a silicon-on-insulator (SOI) substrate having a first region and a second region, the SOI substrate including a vertical stack of a first semiconductor substrate, a buried insulating layer, and a second semiconductor substrate arranged from bottom to top in the first region, respectively;a plurality of transistors on the second semiconductor substrate;a deep trench isolation exposing a surface of the first semiconductor substrate in the second region; anda dielectric capping layer over a bottom and sidewalls of the deep trench isolation and the second semiconductor substrate.2. The semiconductor device of claim 1 , wherein the dielectric capping layer comprises silicon nitride.3. The semiconductor device of claim 1 , wherein each of the transistors comprises a gate electrode claim 1 , source/drain regions disposed on opposite of the gate electrode claim 1 , and a metal silicide formed on a surface of the gate electrode and the source/drain regions.4. The semiconductor device of claim 1 , further comprising an ion implanted layer disposed at a bottom of the deep trench isolation.5. The semiconductor device of claim ...

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Номер записи: 12
08-11-2018 дата публикации

Method and apparatus for backside illumination sensor

Номер: US20180323226A1
Автор: Dekui Qi, Fucheng CHEN
Принадлежит: Semiconductor Manufacturing International Beijing Corp, Semiconductor Manufacturing International Shanghai Corp

A semiconductor device includes a device substrate having a dielectric layer and a metal wire in the dielectric layer, a first opening on the metal wire and having a bottom at a depth the same as an upper surface of the metal wire, a first insulation layer including a first color filter material on sidewalls of the first opening, a second opening disposed at opposite ends of the semiconductor device and having a bottom at a depth the same as the depth of the bottom of the first opening, and a second insulation layer including a second color filter material on sidewalls of the second opening. The first opening is for leading out the metal wire to a pad. The second opening is disposed along scribe lines. The semiconductor device simplifies the process of drawing out and isolating the pads and satisfies technical requirements of a back seal ring.

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Номер записи: 13
17-12-2015 дата публикации

TOUCH PANEL AND TOUCH ELECTRONIC DEVICE

Номер: US20150362960A1
Автор: Chang Chen-Hsin, Chang Pu-Hsin, Chen Fucheng, Hong Pudi, Li Jui-Hsing
Принадлежит:

A touch panel including a flexible substrate, first and second electrode patterns and a trace structure is mounted inside a casing unit with a main casing and a side frame connected to a periphery of the main casing and provided with a key icon. The substrate is disposed in the casing unit and includes first and second areas respectively corresponding to the main casing and side frame. The first electrode pattern is formed on the substrate at the first area. The second electrode pattern is formed on the substrate at the second area corresponding to the key icon. The trace structure is formed on the substrate with contacts and traces connected among the first electrode pattern, the second electrode pattern and the contacts. 1. A touch panel configured to be mounted inside a casing unit , said casing unit including a main casing and a side frame connected to a periphery of the main casing , the side frame being provided with at least one key icon; said touch panel comprising:a flexible substrate correspondingly disposed at an inner surface of the casing unit, and including a first area that corresponds to the main casing and a second area that corresponds to the side frame;a first electrode pattern formed on a surface of said flexible substrate and located at said first area;at least one second electrode pattern formed on said surface of said flexible substrate and located at said second area, said second electrode pattern corresponding to the at least one key icon; anda trace structure formed on said surface of the flexible substrate, and including a plurality of contacts, and a plurality of traces connected among said first electrode pattern, said second electrode pattern and said contacts.2. The touch panel as claimed in claim 1 , wherein said first electrode pattern includes a plurality of horizontal sensing electrodes that extend horizontally and that are mutually parallel claim 1 , and a plurality of vertical sensing electrodes that extend vertically claim 1 , ...

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Номер записи: 14
26-12-2017 дата публикации

Touch panel and touch electronic device

Номер: US9851760B2
Автор: Chen-Hsin Chang, Fucheng CHEN, Jui-Hsing Li, Pu-Hsin Chang, Pudi Hong
Принадлежит: TPK Touch Systems Xiamen Inc

A touch panel including a flexible substrate, first and second electrode patterns and a trace structure is mounted inside a casing unit with a main casing and a side frame connected to a periphery of the main casing and provided with a key icon. The substrate is disposed in the casing unit and includes first and second areas respectively corresponding to the main casing and side frame. The first electrode pattern is formed on the substrate at the first area. The second electrode pattern is formed on the substrate at the second area corresponding to the key icon. The trace structure is formed on the substrate with contacts and traces connected among the first electrode pattern, the second electrode pattern and the contacts.

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Номер записи: 15
02-07-2019 дата публикации

Method and apparatus for backside illumination sensor

Номер: US10340303B2
Автор: Dekui Qi, Fucheng CHEN
Принадлежит: Semiconductor Manufacturing International Beijing Corp, Semiconductor Manufacturing International Shanghai Corp

A semiconductor device includes a device substrate having a dielectric layer and a metal wire in the dielectric layer, a first opening on the metal wire and having a bottom at a depth the same as an upper surface of the metal wire, a first insulation layer including a first color filter material on sidewalls of the first opening, a second opening disposed at opposite ends of the semiconductor device and having a bottom at a depth the same as the depth of the bottom of the first opening, and a second insulation layer including a second color filter material on sidewalls of the second opening. The first opening is for leading out the metal wire to a pad. The second opening is disposed along scribe lines. The semiconductor device simplifies the process of drawing out and isolating the pads and satisfies technical requirements of a back seal ring.

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Номер записи: 16
15-05-2018 дата публикации

Touch panel

Номер: US9971430B2
Автор: Caijin Ye, Defa Wu, Fucheng CHEN, Jui-Hsing Li, Manyi Lin, Pu-Hsin Chang, Pudi Hong, Tsai-Kuai Wei, Xiaoxin Bai
Принадлежит: TPK Touch Solutions Xiamen Inc, TPK Touch Systems Xiamen Inc

A touch panel comprises a sensing area, a periphery area, a plurality of wires and a plurality of bonding pads. The periphery area is disposed around the sensing area. The periphery area comprises a bonding area. The wires are disposed in the periphery area. The bonding pads are disposed in the bonding area and electrical connected to the wires correspondingly. Each of the bonding pads comprises at least a bending portion.

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Номер записи: 17
29-01-2013 дата публикации

Terminal box for centrifugal switch of motor and motor with the same

Номер: US8362663B2
Автор: Fucheng CHEN, PING Lu, Shuangchao Deng, Xiao Liu
Принадлежит: Zhongshan Broad Ocean Motor Manufacturing Co Ltd

A terminal box, including at least a box ( 51 ) having a receiving part ( 10 ), a movable control rod ( 7 ), multiple electric contacts ( 8 ), a thermostat ( 9 ) having a terminal ( 91 ), and a wiring mechanism ( 12 ). The movable control rod ( 7 ) is disposed on the box ( 51 ) and partially extends therefrom. The electric contacts ( 8 ) are disposed in the box ( 51 ). The thermostat ( 9 ) is disposed on end surface of the box ( 51 ). The receiving part ( 10 ) operates to receive the thermostat ( 9 ). One end of the electric contact ( 8 ) extends from the box ( 51 ) and forms a connecting part ( 81 ). A separating plate ( 11 ) is disposed between the connecting part ( 81 ) and the thermostat ( 9 ). One end of the wiring mechanism ( 12 ) is connected to the connecting part ( 81 ), and the other end thereof bypasses the outside of the separating plate ( 11 ) and is connected to the terminal ( 91 ). If the thermostat experiences temperature detection failure, users of the motor can easily remove the wiring mechanism, and timely switch off the power supply connected to the motor via an external protection circuit thereby preventing the motor from being burned out.

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Номер записи: 18
26-09-2011 дата публикации

Caja terminal para interruptor centrifugo de motor, y motor que lo utiliza.

Номер: MX2011003235A
Автор: Fucheng CHEN, PING Lu, Shuangchao Deng, Xiao Liu
Принадлежит: Zhongshan Broad Ocean Motor

La invención describe una caja terminal para un interruptor centrífugo de un motor, y un motor que la utiliza. La caja termina incluye una caja (51), una varilla de control movible (7) dispuesta en la caja (51) y que se extiende parcialmente desde la caja; varios contactos eléctricos (8) dispuestos en la caja (51) y un termostato (9) dispuesto sobre la superficie extrema de la caja; teniendo la caja (51) una parte receptora (10) cuya función es recibir el termostato (9); extendiéndose un extremo del contacto eléctrico (8) desde la caja y formando una parte conectora (81); una placa separadora (11) está dispuesta entre la parte conectora (81) y el termostato (9). La caja terminal incluye adicionalmente un mecanismo de cableado o conexión (12); un extremo de dicho mecanismo de cableado o conexión (12) está conectado a la parte conectora (81) y su otro extremo deriva el exterior de la placa separadora (11) y está conectado a un terminal (91) del termostato. Si el termostato tiene una falla en la detección de la temperatura, los usuarios del motor pueden retirar fácilmente el mecanismo de cableado o conexión y desconectar oportunamente una fuente de alimentación conectada al motor por medio de un circuito de protección externo, que previene que el motor se queme.

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Номер записи: 19