Cathode sputter deposition of a Cu(In, Ga)X2 thin film

The invention relates to a method and device for the deposition of a film made of a semiconductive material having the formula Cu(In, Ga)X2, where X is S or Se. The method of the invention involves cathode sputter deposition of Cu, In, and Ga from at least one sputtering target onto at least one surface of a substrate and moreover involves simultaneous deposition of X in vapor phase onto said surface in a cathode chamber. A vapor form of X or a precursor of the latter is moved in the form of a first laminar gas flow, the traveling path of which is parallel to the surface of the substrate and makes contact with the latter, and is simultaneously moved in the form of a second laminar gas flow for inert gas, the traveling path of which is parallel to the first laminar gas flow and located between the traveling path of the first laminar gas flow and the surface of the sputtering target(s), thus making it possible to confine the first laminar gas flow to the area around the substrate.

Fluid delivery device including a thermoelectric module

The fluid delivery device comprises a first cavity (1a) at a first pressure and a second cavity (1b) at a second pressure, below the first pressure. A partition (2) separates the first cavity (1a) from the second cavity (1b), and a restricting valve (4) is placed between the first and second cavities (1a, 1b). The partition (2) includes a thermoelectric module (12) having the hot side in thermal contact with the first cavity (1a) and a cold side in thermal contact with the second cavity (1b).

METHOD FOR FORMING A MULTILAYER STRUCTURE

The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 10atoms/cmor P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte. 1. A method for forming a multilayer structure on a substrate , comprising the following steps:{'sup': 18', '3, 'providing a stack successively comprising an hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 10atoms/cmor P-doped semiconductor material, and a second layer made from semiconductor material of different nature,'}making a lateral electric contact pad between the first layer and the substrate, andsubjecting the material of the first layer to anodic treatment in an electrolyte.2. The method according to claim 1 , wherein the anodic treatment is made under conditions such that the material of the first layer is transformed into porous material.3. The method according to claim 1 , wherein the anodic treatment is made under conditions such that the material of the first layer is completely etched.4. The method according to claim 1 , wherein the hole blocking layer and the second layer are formed from materials of the same nature.5. The method according to claim 4 , wherein the hole blocking layer and the second layer are formed from N-doped semiconductor material having a dopant concentration less than 10atoms/cm.6. The method according to claim 1 , comprising forming a first protective layer made from a material resistant to the electrolyte on the second layer of semiconductor material.7. The method according to claim 6 , comprising forming a ...

Hydrogen Generating Fuel Cell Cartridges

A gas-generating apparatus includes a cartridge including a reservoir having a first reactant and a reaction chamber, and a receiver that can include a flow control device. The receiver is adapted to receive the cartridge and to transport the first reactant to the reaction chamber after connection with the cartridge. The flow control device is adapted to stop the transport of reactant when the pressure in the reaction chamber reaches a predetermined pressure.

CATHODE SPUTTER DEPOSITION OF A Cu(In,Ga)X2 THIN FILM

A method and device for the deposition of a film made of a semiconductive material having the formula Cu(In, Ga)X, where X is S or Se, involves cathode sputter deposition of Cu, In, and Ga onto at least one surface of a substrate and simultaneous deposition of X in vapor phase onto the surface in a cathode chamber. A vapor form of X or its precursor is moved in a first laminar gas flow parallel to and in contact with the surface, and is simultaneously moved in a second laminar gas flow for inert gas parallel to the first laminar gas flow and located between the first laminar gas flow and a sputtering target(s), to confine the first laminar gas flow to the area around the substrate.

FLUID DELIVERY DEVICE INCLUDING A THERMOELECTRIC MODULE

The fluid distribution device includes a first cavity at a first pressure and a second cavity at a second pressure lower than the first pressure. A partition separates the first cavity from the second cavity and a restricting valve is arranged between the first and second cavities. The partition includes a thermoelectric module having a hot side in thermal contact with the first cavity and a cold side in thermal contact with the second cavity. 17-. (canceled)9. The device according to claim 8 , wherein the thermoelectric module is connected to an energy storage element and is configured to recharge the energy storage element.10. The device according to wherein the restricting valve is provided with an electric adjustment device and is supplied by the energy storage element.11. The device according to claim 8 , comprising a meter designed to measure a fluid consumption.12. The device according to claim 11 , comprising transmission means electrically supplied by the thermoelectric module and configured for transmitting measurements of the fluid consumption.13. The device according to claim 11 , comprising transmission means electrically supplied by the energy storage element and configured for transmitting measurements of the fluid consumption.14. The device according to claim 8 , wherein the restricting valve is arranged for enabling the fluid to flow through the partition close to the thermoelectric module. The invention relates to a fluid distribution device comprising a pressure reducer comprising:Pressure reducers are mechanisms enabling a fluid to be made to flow from a first cavity, where said fluid is at a first pressure, to a second cavity where the fluid is then at a second pressure lower than the first pressure.Fluid distribution devices using pressure reducers exist in plumbing valves: typically they are placed in a building at the level of the meter to reduce the pressure of the urban supply system, for example the water or gas supply, from about 10 bars ...

METHOD FOR PRODUCING AN INTERFACE INTENDED TO ASSEMBLE TEMPORARILY A MICROELECTRONIC SUPPORT AND A MANIPULATION HANDLE, AND TEMPORARY ASSEMBLY INTERFACE

Method for producing an interface for assembling temporarily a microelectronic support and a handle, comprising at least: 1. Production method for producing an interface intended to assemble temporarily a first and a second element , comprising at least:a) formation of a first layer comprising at least one material capable of releasing at least one chemical species under the action of a physical-chemical treatment,b) formation of a second layer comprising at least one material capable of receiving the at least one chemical species so as to cause its embrittlement,the first layer and a second layer being at least in part in contact.2. Production method according to claim 1 , wherein the formation of the first layer is such that the at least one chemical species is trapped in the material of the first layer.3. Production method according to claim 1 , wherein the second layer is at least in part porous.4. Production method according to wherein the second layer is at least in part porous and during the formation of the second layer claim 1 , an external zone offering a porosity less than a central zone is produced claim 1 , known as exclusion zone.5. Production method according to claim 1 , wherein step a) is carried out by deposition of amorphous silicon by CVD or PECVD claim 1 , and the second layer is at least in part made of porous silicon.6. Production method according to claim 1 , comprising a chemical treatment of the second layer claim 1 , among an oxidation by plasma claim 1 , an oxidation by liquid process claim 1 , such as oxidation in peroxide medium claim 1 , etc. claim 1 , a gaseous oxidation treatment claim 1 , a thermal oxidation treatment claim 1 , etc.7. Assembly method for assembling temporarily a first element and a second element comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the production of an interface according to the production method according to ,'}the assembly of the first element and the second element through said interface ...

ULTRA-THIN IMPLANTABLE ENERGY SOURCE

The invention relates to an implantable energy source comprising at least one energy storage sub-system () constructed in the form of a stack of thin layers () on a substrate (), characterised in that said energy storage sub-system has a plurality of through-openings () for allowing the development and the passage of blood vessels. Preferably, the energy source thereof has a thickness of less than, or equal to, 1 mm, over at least 80% of its surface. 1171175176174. An implantable power source comprising at least one energy storing subsystem () produced in the form of a thin-film stack () on a substrate () , characterized in that said energy storing subsystem has a plurality of through-apertures () in order to allow the development and passage of blood vessels.2. The implantable power source as claimed in claim 1 , in which each said aperture has an area comprised between 0.01 mmand 4 mm.3. The implantable power source as claimed in claim 1 , in which the spacing between said apertures is comprised between 1 mm and 1 cm.473182. The implantable power source as claimed in claim 1 , having a biocompatible coating ( claim 1 , ) covering at least one portion of its surface comprising the interior surface of said apertures.58182. The implantable power source as claimed in claim 4 , in which said biocompatible coating comprises an exterior film () made of a biocompatible organic material and an interior film () made of an inorganic material that is impermeable to moisture and oxygen.6. The implantable power source as claimed in claim 4 , in which said biocompatible coating is substantially transparent at least in a spectral range in the visible or near infrared.7. The implantable power source as claimed in claim 1 , in which said apertures are completely or partially filled with a gel promoting cellular growth.8172173. The implantable power source as claimed in claim 1 , in which said energy storing subsystem has a plurality of active regions () separated by interconnect ...

THERMAL ENERGY HARVESTING OPTIMISATION WITH BISTABLE ELEMENTS AND COLLABORATIVE BEHAVIOR

System for converting thermal energy into electrical energy (S) intended to be arranged between a hot source (SC) and a cold source (SF), comprising means for converting thermal energy into mechanical energy () and a piezoelectric material, with the means for converting thermal energy into mechanical energy () comprising groups (G G) of at least three bimetallic strips () linked mechanically together by their longitudinal ends and suspended above a substrate (), each bimetallic strip () comprising two stable states wherein it has in each of the states a curvature, with two directly adjacent bimetallic strips () having for a given temperature opposite curvatures, with the switching from one stable state of the bimetallic strips () to the other causing the deformation of a piezoelectric material. 120-. (canceled)21. A conversion system for converting thermal energy into electrical energy to be arranged between a hot source and a cold source , comprising:a substrate;means for converting thermal energy into mechanical energy; andmeans for converting mechanical energy into electrical energy;the means for converting thermal energy into mechanical energy having at least one group of at least two bimetallic strips mechanically connected to one another and at least partially suspended above the substrate, each bimetallic strip having two stable states in which it has in each stable state a curvature, the bimetallic strips being directly adjacent having opposite curvatures, the passage from one stable state to the other being adapted to cause excitation of the means for converting mechanical energy into electrical energy for electricity generation.22. The conversion system according to claim 21 , wherein the bimetallic strips are mechanically interconnected by their longitudinal ends so as to form a band.23. The conversion system according to claim 21 , wherein the bimetallic strips are mechanically interconnected by their lateral ends.24. The conversion system according to ...

LIGHT-EMITTING DIODE WITH LOCAL PHOTONIC CRYSTALS

The light-emitting diode includes first and second layers of semiconductor material, having opposite conductivity types, an active light-emitting area located between the first and second layers of semiconductor material, an electrode arranged on the first layer of semiconductor material and a photonic crystal formed in the first layer of semiconductor material. The photonic crystal and the electrode are separated by a distance optimized to simultaneously promote the electric injection and minimize the light absorption in the LED. 2. Diode according to claim 1 , wherein the electrode comprises a plurality of electrically-conductive track and wherein the photonic crystal comprises a plurality of light extraction areas distributed in the first semiconductor material layer claim 1 , each extraction area being located between two electrically-conductive tracks.3. Diode according to claim 2 , wherein each extraction area is located at an equal distance from the two electrically-conductive tracks.4. Diode according to claim 2 , wherein the distribution of the extraction areas in the first semiconductor material layer is periodic.5. Diode according to claim 2 , wherein two consecutive extraction areas are separated by a distance shorter than the average distance traveled by photons before they are absorbed in the semiconductor material.6. Diode according to claim 1 , wherein the photonic crystal comprises periodically spaced apart holes extending through the first layer of semiconductor material all the way to the active light-emitting area.7. Diode according to claim 6 , wherein the holes of the photonic crystal extend through the active light-emitting area.8. Diode according to claim 6 , wherein the holes of the photonic crystal have a progressively-varying depth.10. Method according to claim 9 , wherein the photonic crystal is etched through a mask comprising a plurality of recesses claim 9 , which results in a plurality of light extraction areas distributed in the ...

Storage for electric cable

The invention concerns an electrical connection system, comprising a helical electrical cable ( 6 ) having a spring effect and a device ( 7 ) for storing the cable, comprising at least one first pulley ( 74, 73 ) for guiding the cable.

ELECTROCHEMICAL CELL FOR TESTING A SOLID-STATE BATTERY WITH SIMULTANEOUS MEASUREMENT OF THE GASES GENERATED

An electrochemical cell for testing a battery, wherein the electrochemical cell includes two electrodes, preferentially made of vitreous carbon, intended to be in electrical contact with the battery to be tested. 1. A cell for testing an electrochemical battery , wherein the electrochemical cell comprises two electrodes , preferentially made of vitreous carbon , intended to be in electrical contact with the battery to be tested.2. The electrochemical cell according to claim 1 , comprising: i. a cavity intended to receive the battery to be tested, the battery being intended to be subjected to an electrochemical cycle;', 'ii. an outlet orifice for gas generated during the electrochemical cycle, the outlet orifice being fluidically connected with the cavity and of a section substantially at right angles to a first axis;, 'a. a test cell made of non-conductive ceramic, preferentially of polyetheretherketone, comprisingb. a device for applying a temperature and a pressure to the battery, comprising the two electrodes, the device being tight to the gases generated by the battery during the electrochemical cycle, the electrodes being made of a corrosion-resistant material.3. The cell according to claim 2 , wherein the test cell comprises an inlet orifice claim 2 , situated opposite the outlet orifice with respect to the cavity along the first axis claim 2 , for a carrier gas fluidically connected with the cavity.4. The cell according to claim 2 , further comprising a collector intended to recover claim 2 , at the gas outlet orifice claim 2 , the gases originating from the cavity during the electrochemical cycle.6. The cell according to claim 5 , wherein the application device comprises a heating press comprising a metal top plate and a metal bottom plate that are movable in translation with respect to one another on the second axis (Z) claim 5 , the top plate being disposed above the top part claim 5 , the bottom plate being disposed below the bottom part claim 5 , so as ...

METHOD FOR PRODUCING A CAPACITIVE SENSOR

A method for production of a capacitive sensor including a carrier whereupon electrodes separated from each other by a porous material rest, the porous material being made by porosifying trenches formed in a carrier. 17-. (canceled)8. A method for producing a capacitive sensor , comprising:forming trenches in a carrier based at least on one given material by etching the at least one given material;making the given material porous at walls and bottom of the trenches;filling the trenches using a conducting material.9. The method according to claim 8 , wherein the trenches are made through a protective masking claim 8 , the method further comprising claim 8 , after the filling the trenches claim 8 , removal by planarization of areas of the conducting material protruding from a mouth of the trenches.10. The method according to claim 8 , further comprising a treatment to make the given porous material hydrophilic.11. The method according to claim 8 , further comprising functionalizing the porous material.12. The method according to claim 8 , wherein the carrier is a silicon-base substrate.13. The method according to claim 8 , further comprising claim 8 , after the making the given material porous claim 8 , and prior to the filling the trenches: depositing a dielectric material in the trenches.14. The method according to claim 8 , wherein the forming the trenches comprises alternating etching phases with SFand passivation phases using CFfollowed by one or plural treatment using Oplasma. The invention relates to the field of capacitive sensors having a porous material, and applies to the detection of fluid and particularly to gas and/or humidity sensors.It relates to a method for producing a capacitive sensor device with a porous material.A capacitive sensor consists generally of electrodes provided on either side of a dielectric material layer.Some capacitive sensors such as gas or humidity sensors integrate a porous material, and have a capacitance likely to vary as a ...

METHOD FOR FABRICATING AN ELECTROCHEMICAL DEVICE, SUCH AS AN ELECTROCHROMIC SYSTEM OR AN ENERGY STORAGE SYSTEM, FOR EXAMPLE A MICROBATTERY, A BATTERY OR A SUPERCAPACITOR

Method for fabricating an electrochemical device, such as an electrochromic system or an energy storage system, including the following successive steps: providing a substrate; forming n individual entities on the substrate, with n greater than or equal to 2, each individual entity including: a first current collector, of a first polarity, a first electrode, an ionically conductive and electrically insulating thin layer, a second electrode, a second current collector, of a second polarity; cutting the substrate, cutting being performed so as to have at least x complete individual entities, on the substrate, with x greater than or equal to 2 and x less than or equal to n; electrically connecting the current collectors of the same polarity of the x complete individual entities in parallel. 1. Method for fabricating at least first and second electrochemical devices , such as electrochromic systems or energy storage systems , for example microbatteries , batteries or supercapacitors , comprising the following successive steps: a first current collector of a first polarity,', 'a first electrode,', 'an ionically conductive and electrically insulating thin layer,', 'a second electrode,', 'a second current collector of a second polarity,, 'a) providing a substrate comprising a first group of complete individual entities, each complete individual entity comprisingb) cutting the substrate so as to form at least second and third groups of individual entities each comprising a plurality of complete individual entities from the first group of complete individual entities, cutting being performed so as to form a plurality of non-complete individual entities in each of the second and third groups of individual entities, all or part of the individual entities located at a periphery of the second group of individual entities and/or of the third group of individual entities being non-complete individual entities,c) electrically connecting the first and/or second current collectors of ...

METHOD FOR MANUFACTURING A MICROELECTRONIC DEVICE

The invention relates to a method for manufacturing a microelectronic device comprising, on the base of a substrate: 2. The method according to claim 1 , wherein the thickness eof the first sacrificial layer is greater than the thickness eof the second sacrificial layer.3. The method according to claim 1 , wherein the formations of the first and second sacrificial layers comprise respectively a performance of a heat treatment.4. The method according to claim 3 , wherein the heat treatment is carried out for a period of 2 to 100 hours and at a temperature of between 700° C. and 1200° C. so as to form the first and second sacrificial layers.5. The method according to claim 1 , comprising claim 1 , after the formation of the second contact layer claim 1 , a total removal of the first sacrificial layer.6. The method according to claim 1 , wherein the first and second sacrificial layers are removed by chemical attack.7. The method according to claim 1 , wherein the formations of the first and second contact layers comprise carrying out of a heat treatment.8. The method according to claim 7 , wherein the heat treatment is carried out for a period of 10 to 600 seconds and at a temperature of between 150° C. and 500° C. so as to form the first and second contact layers.9. The method according to claim 1 , wherein the first metallic layer and the second metallic layer are made from different materials.10. The method according to claim 1 , wherein the first semiconductor material and the second semiconductor material are different.11. The method according to claim 10 , wherein the first metallic layer is formed by selective deposition outside regions comprising dielectric regions of the top surface of the substrate and the second layer of the second semiconductor material.12. The method according to claim 10 , wherein the second metallic layer is formed by selective deposition outside regions comprising dielectric regions of the top surface of the substrate and those of the ...

METHOD FOR MAKING A SUSPENDED PART OF A MICROELECTRONIC AND/OR NANOELECTRONIC STRUCTURE IN A MONOLITHIC PART OF A SUBSTRATE

Method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate, the method comprising the following steps: 1. A method for making at least one first suspended part of a microelectronic or nanoelectronic structure from a monolithic part of a first substrate comprising a front face and a back face , said method comprising the following steps:a) make a first etching with a first given depth in the front face so as to delimit the first suspended part by trenches, the trenches being delimited by side edges and a bottom,b) deposit a protective material on at least the side edges of the trenches forming the flanks of the first suspended part, said protective material being capable of protecting said side edges against a subsequent physicochemical treatment,c) make a second etching at least in the bottom of the trenches so as to obtain trenches with a second depth greater than the first depth, the side edges then comprising a part covered by the protective material and a part not covered by the protective material,d) make a physicochemical treatment of the first substrate in the part of the side edges not covered by the protective material so as to at least partly modify a zone of the substrate placed opposite the front face relative to the first suspended part, called the treated zone,e) release the first suspended part by removal of at least the zone treated in step d).2. The method according to claim 1 , in which the physicochemical treatment is an electrochemical treatment.3. The method according to claim 2 , in which the treatment is an anodization.4. The method according to claim 1 , in which the physicochemical treatment is a partial isotropic etching.5. The method according to claim 1 , in which the first substrate is a monocrystalline semiconducting material.6. The method according to claim 1 , comprising claim 1 , a step d1) to oxidize at least the treated zone between step d) and ...

ELECTROCHEMICAL BATTERY MODULE HAVING IMPROVED RESISTANCE IN MOIST ENVIRONMENTS AND METHOD FOR PRODUCING AT LEAST ONE SUCH MODULE

A module for an electrochemical battery including plural accumulators electrically connected together by connection elements, a mechanism for electrical connection of the module with an exterior and a continuous envelope made from a dielectric polymer material that covers exterior surfaces of the accumulators, and connection elements that do not cover the mechanism for electrical connection of the module with the exterior. The continuous envelope is made by soaking to ensure coating of the accumulators and of the one or more connecting elements. The plural accumulators are distributed into plural layers, arranged in relation to each other so that one or more passages are made between the accumulators, wherein the continuous envelope covers a surface of the accumulator or accumulators delimitating the passages between the accumulators. 125-. (canceled)26. A module for an electrochemical battery comprising:plural accumulators electrically connected together by at least one connection element;an electrical connection of the module with an exterior;a continuous envelope made from a dielectric polymer material that covers an exterior surface of the accumulators and the at least one connection element and that does not cover electrical connection of the module with the exterior, the continuous envelope being made by soaking to ensure coating of the accumulators and of the at least one connecting element;the plural accumulators are distributed into plural layers, arranged in relation to each other so that one or more passages are made between the accumulators, and the continuous envelope covers a surface of at least one of the accumulators delimitating the passages between the accumulators.27. A module according to claim 26 , wherein thickness of the continuous envelope is between 10 μm and 300 μm.28. A module according to claim 26 , wherein the continuous envelope is formed of plural layers made successively claim 26 , wherein the layers are made from a same polymer ...

Process for electrochemically making at least one porous area of a micro and/or nanoelectronic structure

A process for making at least one porous area (ZP) of a microelectronic structure in at least one part of an conducting active layer ( 6 ), the active layer ( 6 ) forming a front face of a stack, the stack comprising a back face ( 2 ) of conducting material and an insulating layer ( 4 ) interposed between the active layer ( 6 ) and the back face ( 2 ), said process comprising the steps of: a) making at least one contact pad ( 14 ) between the back face ( 2 ) and the active layer ( 6 ) through the insulation layer ( 2 ), b) placing the stack into an electrochemical bath, c) applying an electrical current between the back face ( 2 ) and the active layer ( 6 ) through the contact pad ( 14 ) causing porosification of an area (ZP) of the active layer ( 6 ) in the vicinity of the contact pad ( 14 ), d) forming the microelectronic structure.

ELECTROCHEMICAL BATTERY WITH IMPROVED OPERATING SAFETY IN MOIST ENVIRONMENTS

A battery including: modules connected to each other; electrically insulating supports upon which the modules are arranged, each support including an upper face upon which the module rests and a lower face, and a rim aligned downwards to cause a potential stream of liquid to flow under gravity; and a mechanism monitoring impedance between the module and an electrically conductive element at least vertically in line with the rim. 120-. (canceled)21. A battery comprising:at least one module comprising one or more accumulators connected to each other;at least one electrically insulating support on which is arranged at least a part of the accumulators, the electrically insulating support comprising an upper face on which at least part of the accumulators rests and a lower face, and at least one protruding or receding zone which protrudes or recedes from the lower face formed on or in the lower face respectively, the at least one zone edging all or part of the external contour of the lower face;a support clement on which the electrically insulating support rests, such that the at least one zone is arranged at a distance from a surface upon which the support element rests, to cause potential streams of liquid to flow under gravity, the surface comprising at least one conductive metallic element located at least vertically in line with the protruding or receding zone; anda first monitoring device for verifying electrical insulation between the conductive metallic element and the module or any conductive portion connected to a terminal of the module.22. A battery according to claim 21 , wherein the first monitoring device monitors variation in the impedance between the conductor metallic element and the module or any conductive part connected to a terminal of the module.23. A battery according to claim 21 , wherein the accumulators are distributed as at least two modules claim 21 , wherein the accumulators of each module are electrically connected to each other and wherein ...

Thermal Energy Harvesting Optimization with Bistable Elements and Collaborative Behavior

A system includes a hot source, a cold source, and a device thermally coupled between the hot source and the cold source. The device includes a thermal-mechanical transducer and a mechanical-electrical transducer. The thermal-mechanical transducer includes a band of bimetallic strips linked mechanically together by their longitudinal ends. The band partially suspended over a portion of a substrate. Each bimetallic strip has a first stable state having a first curvature and a second stable state having a second curvature opposite the first curvature, and adjacent bimetallic strips have opposite curvature. 1. A system comprising:a hot source;a cold source; and each bimetallic strip has a first stable state having a first curvature and a second stable state having a second curvature opposite the first curvature, and', 'adjacent bimetallic strips have opposite curvature., 'a device thermally coupled between the hot source and the cold source, the device comprising a thermal-mechanical transducer and a mechanical-electrical transducer, wherein the thermal-mechanical transducer comprises a band of bimetallic strips linked mechanically together by their longitudinal ends, the band partially suspended over a portion of a substrate, wherein'}2. The system of claim 1 , wherein the mechanical-electrical transducer comprises a piezoelectric material covering a portion of a bimetallic strip of the band.3. The system of claim 1 , wherein the mechanical-electrical transducer comprises a magnetic material.4. The system of claim 1 , wherein the hot source comprises s surface of an electronic component.5. The system of claim 1 , wherein the cold source comprises a fin radiator.6. The system of claim 1 , further comprising a load coupled to the mechanical-electrical transducer.7. The system of claim 6 , wherein the load comprises an energy storage device.8. The system of claim 1 , wherein:bimetallic strips in the first stable state are physically closer to the hot source than ...

FABRICATION METHOD OF A STACK OF ELECTRONIC DEVICES

This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device and a dielectric layer; b) providing a second structure successively including a substrate, an active layer, an intermediate layer, a first semiconducting layer and a porous second semiconducting layer; c) bonding the first and second structures by direct bonding between the dielectric layer and the porous second semiconducting layer; d) removing the substrate of the second structure so as to expose the active layer; e) adding dopants to the first semiconducting layer or to the active layer; f) irradiating the first semiconducting layer by a pulse laser so as to thermally activate the corresponding dopants. 1. Fabrication method of a stack of electronic devices , comprising the following steps:a) providing a first structure successively comprising a first substrate, a first electronic device, and a dielectric layer;b) providing a second structure successively comprising a second substrate, an active layer designed to form a second electronic device, an intermediate layer, a first semiconducting layer designed to form a ground plane, and a porous second semiconducting layer;c) bonding the first and second structures by direct bonding between the dielectric layer and the porous second semiconducting layer;d) removing the second substrate of the second structure so as to expose the active layer;e) adding dopants to the first semiconducting layer or the active layer;f) irradiating the first semiconducting layer or the active layer by a pulse laser so as to thermally activate the dopants.2. Method according to claim 1 , wherein the porous second semiconducting layer presents a free surface in step b) claim 1 , and wherein step b) comprises a step b) consisting in forming a dielectric layer on said free surface claim 1 , direct bonding being performed in step c) between the dielectric layer of the first structure and the dielectric layer formed ...

METHOD OF MANUFACTURING PATTERNS WITHIN A POLYMER LAYER

Structured electrolyte for micro-battery

In order to increase the capacity of an “all-solid” type micro-battery, the layer of electrolyte is structured: transversing cavities are created in the flat layer, advantageously at the level of patches of collector material, then filled by anode or cathode material.

Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film

A method for providing a dielectric film having a low dielectric constant. The deposited film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. The low dielectric constant film is a carbon-doped silicon oxide layer deposited from a thermal, as opposed to plasma, CVD process. The layer is deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond. During the deposition process the wafer is heated to a temperature less than 250° C. and preferably to a temperature between 100-200° C. Enhancements to the process include adding Boron and/or Phosphorus dopants, two step deposition, and capping the post cured layer.

Process for forming a low dielectric constant carbon-containing film

An embodiment of the present invention provides methods for forming a carbon-containing layer having a low dielectric constant and good gap-fill capabilities. A method includes depositing a carbon-containing layer on a substrate and transforming the carbon-containing layer to remove at least some of the carbon. The transforming step may include annealing the carbon-containing layer in a furnace containing a hydrogen atmosphere, for example. The carbon-containing layer may be a carbon-doped silicon oxide material, where the transforming step changes the carbon-doped silicon oxide. Additionally, the method may include subjecting the annealed layer to a hydrogen and/or low oxygen plasma treatment to further remove carbon from the layer. Additionally, a step of adding a capping layer to the annealed, plasma treated material is provided. Products made by the above methods are also included, such as a product including a low k carbon-containing layer where the low k carbon-containing layer has been transformed to remove some of the carbon from the layer. An additional product includes a transformed carbon-containing layer further subjected to a hydrogen plasma treatment to remove more carbon from the layer. Further, a capping layer deposited over the transformed and hydrogen plasma treated layer is provided.

Method for producing patterns in a polymer layer

Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer.

Method for producing patterns in a polymer layer

A method for producing patterns in a polymer layer. Polymer sites are formed on a support. These sites are subjected to a plasma deposition of dielectric material and preferably react with this plasma so as to form openings at the level of said sites. A pattern structure is then formed in the dielectric material and/or in the polymer.

METHOD OF MANUFACTURING PATTERNS WITHIN A POLYMER LAYER

Des sites de polymère sont formés sur un support (2). Ces sites sont soumis à un plasma de dépôt de matériau diélectrique (3) et réagissent préférentiellement avec ce plasma de manière à former des ouvertures (6) au niveau desdits sites. Un réseau de motifs est alors formé dans le matériau diélectrique (3) et/ou dans le polymère (4). Polymer sites are formed on a support (2). These sites are subjected to a deposition plasma of dielectric material (3) and preferentially react with this plasma so as to form openings (6) at said sites. An array of patterns is then formed in the dielectric material (3) and / or in the polymer (4).

Procédé de fabrication de motifs au sein d'une couche de polymère

Procede de fabrication d'une structure d'interconnexions a cavites pour circuit integre

Method for creating patterns inside a polymer layer

The method for producing pattern structures using a polymer (4) deposited on a support (2), comprises successively forming polymer sites reacting with a predetermined plasma by depositing polymer aggregates on the support and then depositing a dielectric material (3) by the plasma to form openings (6) at a level of the sites. The deposition of polymer aggregates corresponds to the desired pattern structure. The polymer sites comprise zones having roughness different from rest of polymer surface, or zones having different stoichiometry compared to average total composition.

Method for creating patterns inside a polymer layer

Des sites de polymère sont formés sur un support (2). Ces sites sont soumis à un plasma de dépôt de matériau diélectrique (3) et réagissent préférentiellement avec ce plasma de manière à former des ouvertures (6) au niveau desdits sites. Un réseau de motifs est alors formé dans le matériau diélectrique (3) et/ou dans le polymère (4). Polymer sites are formed on a support (2). These sites are subjected to a deposition plasma of dielectric material (3) and preferentially react with this plasma so as to form openings (6) at said sites. An array of patterns is then formed in the dielectric material (3) and / or in the polymer (4).

Post-deposition treatment to enhance properties of Si-O-C low K films

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

SEMICONDUCTOR STRUCTURE COMPRISING AN UNDERGROUND POROUS LAYER, FOR RF APPLICATIONS

A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm.cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm.cm. The invention also relates to a method for producing such a semiconductor structure. 1. A semiconductor structure for radiofrequency applications , comprising:a carrier substrate comprising silicon and including a mesoporous layer, the mesoporous layer including hollow pores, internal walls of the hollow pores being coated with oxide, a thickness of the mesoporous layer being between 3 μm and 40 μm, a resistivity of the mesoporous layer being higher than 20 kohm.cm throughout the entire thickness of the mesoporous layer, a resistivity of the carrier substrate being between 0.5 ohm.cm and 4 ohm.cm;a dielectric layer on the mesoporous layer; anda surface layer on the dielectric layer.2. The semiconductor structure of claim 1 , wherein the thickness of the mesoporous layer is less than 20 μm.3. The semiconductor structure of claim 2 , wherein the resistivity of the carrier substrate is between 1 ohm.cm and 2 ohm.cm.4. The semiconductor structure of claim 3 , wherein the surface layer comprises at least one material chosen from among the group consisting of silicon claim 3 , germanium claim 3 , silicon carbide claim 3 , IV-IV claim 3 , III-V or II-VI semiconductor compounds claim 3 , or piezoelectric materials.5. The semiconductor structure of claim 4 , wherein the porosity of the mesoporous layer is between 40% and 60%.6. The semiconductor structure of claim 5 , further comprising radiofrequency devices in and/or on the surface ...

METHOD FOR PRODUCING A SUSPENDED PART OF A MICROELECTRONIC AND / OR NANOELECTRONIC STRUCTURE IN A MONOLITHIC PART OF A SUBSTRATE

Procédé de réalisation d'au moins une partie suspendue d'une structure microélectronique et/ou nanoélectronique à partir d'une partie monolithique d'un premier substrat, ledit procédé comportant les étapes: -réalisation dans le substrat monolithique d'une première gravure sur une première profondeur pour définir la structure suspendue, - dépôt d'une couche de protection aux moins sur les bords latéraux de la première gravure, -réalisation d'une deuxième gravure sur une deuxième profondeur dans la première gravure, - réalisation d'un traitement physicochimique d'au moins une partie de la zone située sous la structure suspendue de sorte à modifier celle-ci, et - libération de la structure suspendue par retrait de la partie traitée par le traitement physicochimique. A process for producing at least one suspended part of a microelectronic and / or nanoelectronic structure from a monolithic part of a first substrate, said method comprising the steps of: -making in the monolithic substrate a first etching on a first depth to define the suspended structure, - deposition of a protective layer at least on the lateral edges of the first etching, - realization of a second etching on a second depth in the first etching, - carrying out a treatment physicochemical of at least a portion of the area under the suspended structure so as to modify it, and - release of the suspended structure by removal of the treated part by the physicochemical treatment.

DEVICE FOR CABLE OR PIPE

ULTRAFINE IMPLANTABLE ENERGY SOURCE.

Structured electrolyte for micro-battery

In order to increase the capacity of an “all-solid” type micro-battery, the layer of electrolyte is structured: transversing cavities are created in the flat layer, advantageously at the level of patches of collector material, then filled by anode or cathode material.

ELECTROLYTE STRUCTURE FOR MICROBATTERY

Structured electrolyte for microbattery

Structured electrolyte for microbattery

Nanostructured Electrode for a Microbattery

A new anode configuration ( 20 ) is proposed for a lithium microbattery ( 10 ). The anode ( 20 ) preferably consists of nanotubes or of nanowires ( 24 ) such that the empty space ( 26 ) left between the different components ( 24 ) provides compensation for the inherent swelling upon discharging the microbattery ( 10 ). With the absence of stresses on the electrolyte ( 18 ), the lifetime of the battery ( 10 ) may be increased.

Nanostructured electrode for a microbattery

A new anode configuration ( 20 ) is proposed for a lithium microbattery ( 10 ). The anode ( 20 ) preferably consists of nanotubes or of nanowires ( 24 ) such that the empty space ( 26 ) left between the different components ( 24 ) provides compensation for the inherent swelling upon discharging the microbattery ( 10 ). With the absence of stresses on the electrolyte ( 18 ), the lifetime of the battery ( 10 ) may be increased.

ELECTROLYTE STRUCTURE FOR MICROBATTERY

Afin d'augmenter la capacité d'une micro-batterie (10) de type « tout solide », la couche d'électrolyte (4) est structurée : des cavités (5) traversantes sont créées dans la couche plane (4), avantageusement au niveau de plages de matériau collecteur (2), puis remplies par du matériau d'anode ou de cathode (6, 7).

Structured electrolyte for microbattery

Battery has a cathode electrode (6), an anode electrode (7) and a lithium phosphorus oxynitride electrolyte layer (4) including two surfaces. The electrolyte layer includes cavities traversed between the two surfaces, where the two electrodes are localized in the cavities. The cavities include collector material at the level of one surface of the electrolyte layer. An independent claim is also included for a method for fabricating an energy storage battery.

Lithium storage battery with current electrode collector assembly with expansion cavity and its manufacturing method

【課題】従来の技術の欠点を改善するリチウム蓄電池、特に、電解質に対して及ぼされる応力を制限すると同時に、高い性能を有し且つ実施が容易なリチウム蓄電池を提供する。 【解決手段】リチウム蓄電池は、凹状領域を備える電流コレクタ（２）と、電極（３）と、電極を形成する材料のための複数の膨張キャビティ（４）とによって形成される積層体（１）を備える。各膨張キャビティ（４）は、電極（２）の一部によって形成される少なくとも一つの壁を備える。望ましくは、電極は、Ｌｉ ＋ イオンを挿脱できる少なくとも一つの材料によって形成される電極であり、当該材料の体積は、Ｌｉ ＋ イオンが挿入されるときに増加する。従って、Ｌｉ ＋ 陽イオンが材料中に挿入されると、膨張キャビティ（４）の空の容積の少なくとも一部を、電極を形成する材料の一部によって満たすことができる。膨張キャビティ（４）は、電流コレクタ（２）の凹状領域内に形成される。 【選択図】図１

Method and apparatus to enchance properties of Si-O-C low K films

A method for providing a dielectric film having enhanced adhesion and stability.. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si-C) bond.

ENERGY GENERATING DEVICE COMPRISING A PHOTOVOLTAIC CONVERTER AND A THERMOELECTRIC CONVERTER, THE SAME INCLUDING WITHIN THE PHOTOVOLTAIC CONVERTER SUPPORT SUBSTRATE

INTEGRATED MICRO COMPONENT ASSOCIATING THE RECOVERY AND STORAGE FUNCTIONS OF ENERGY

L'invention concerne un micro-composant comprenant une source de stockage électrochimique. Il comprend un premier substrat (1) présentant une face de contact (3) et un deuxième substrat (10) présentant une face de contact (13), au moins une cavité (5) étant formée dans au moins l'un des substrats à partir de sa face de contact, les deux substrats (1, 10) étant solidarisés selon lesdites faces de contact par l'intermédiaire de moyens d'étanchéité (18), ladite cavité, rendue ainsi étanche, contenant la source de stockage électrochimique, le micro-composant fournissant des liaisons électriques entre la source et le milieu extérieur. The invention relates to a micro-component comprising an electrochemical storage source. It comprises a first substrate (1) having a contact face (3) and a second substrate (10) having a contact face (13), at least one cavity (5) being formed in at least one of the substrates from its contact face, the two substrates (1, 10) being secured to said contact faces by means of sealing means (18), said cavity, thus sealed, containing the electrochemical storage source, the micro-component providing electrical connections between the source and the external environment.

INTEGRATED MICRO COMPONENT ASSOCIATING THE RECOVERY AND STORAGE FUNCTIONS OF ENERGY

METHOD FOR MANUFACTURING A CAVITE INTERCONNECTION STRUCTURE FOR AN INTEGRATED CIRCUIT

L'invention concerne un procédé de fabrication d'une structure d'interconnexions électriques de type damascène pour un circuit intégré, comprenant au moins un niveau d'interconnexions, constitué de conducteurs électriques disposés sur un substrat et séparés entre eux par des cavités d'air, une couche de matériau électriquement isolant recouvrant le niveau d'interconnexions, le procédé comprenant les étapes consistant à :- déposer une couche de matériau sacrificiel sur le substrat,- graver la couche de matériau sacrificiel selon un motif correspondant aux conducteurs électriques,- déposer, sur la couche gravée de la couche de matériau sacrificiel, une couche de membrane en matériau perméable à un agent d'attaque permettant de décomposer le matériau sacrificiel,- décomposer le matériau sacrificiel au moyen de l'agent d'attaque, moyennant quoi des cavités d'air sont formées à la place du matériau sacrificiel décomposé,- former les conducteurs électriques dans le motif de gravure pour obtenir des conducteurs électriques séparés par des cavités d'air,- déposer une couche de matériau électriquement isolant pour recouvrir le niveau d'interconnexions obtenu. The invention relates to a method for manufacturing a damascene-type electrical interconnection structure for an integrated circuit, comprising at least one level of interconnections, consisting of electrical conductors arranged on a substrate and separated from each other by cavities. air, a layer of electrically insulating material covering the level of interconnections, the method comprising the steps of: depositing a layer of sacrificial material on the substrate, etching the layer of sacrificial material in a pattern corresponding to the electrical conductors; depositing, on the etched layer of the layer of sacrificial material, a membrane layer of material permeable to an etchant for breaking down the sacrificial material, - decomposing the sacrificial material by ...

Hybrid electrical energy storage system

L’invention concerne un système (2) de stockage d’énergie électrique comprenant : - un premier connecteur (6) et un deuxième connecteur (8) ; - une première batterie (10) agencée entre le premier connecteur (6) et le deuxième connecteur (8) ; - une deuxième batterie (12) et un interrupteur (14) connectés en série, agencés entre le premier connecteur (6) et le deuxième connecteur (8), la deuxième batterie (12) comprenant une pluralité de deuxièmes organes de stockage (22) en série, et étant configurée pour présenter, entre ses bornes, une deuxième tension au-delà d’un intervalle de tension admissible prédéterminé lorsque chacun des deuxièmes organes de stockage (22) est chargé, la deuxième batterie (12) présentant une résistance interne inférieure à celle de la première batterie (10) dans une plage de température prédéterminée ; et - un organe de commande (16) configuré pour, lorsqu’une condition prédéterminée est vérifiée, commander la fermeture de l’interrupteur (14). Figure pour l’abrégé : figure 1 The invention relates to an electrical energy storage system (2) comprising: - a first connector (6) and a second connector (8); - a first battery (10) arranged between the first connector (6) and the second connector (8); - a second battery (12) and a switch (14) connected in series, arranged between the first connector (6) and the second connector (8), the second battery (12) comprising a plurality of second storage members (22) in series, and being configured to present, between its terminals, a second voltage beyond a predetermined allowable voltage range when each of the second storage members (22) is charged, the second battery (12) having an internal resistance lower than that of the first battery (10) within a predetermined temperature range; and - a control member (16) configured to, when a predetermined condition is satisfied, control the closing of the switch (14). Figure for the abstract: figure 1

FUEL CELL COMPRISING A PLURALITY OF ELEMENTARY CELLS CONNECTED IN SERIES BY CURRENT COLLECTORS.

PROCESS FOR MANUFACTURING A LITHIUM MICRO-BATTERY

CURRENT COLLECTOR-ELECTRODE ASSEMBLY WITH EXPANSION CAVITES FOR LITHIUM ACCUMULATOR IN THE FORM OF THIN FILMS.

Un ensemble, pour accumulateur au lithium sous forme de films minces, comporte un empilement (1) formé d'un collecteur de courant (2) et d'une électrode (3) et une pluralité de cavités d'expansion (4) pour le matériau formant l'électrode. Chaque cavité d'expansion (4) comporte au moins une paroi formée par une partie de l'électrode (2). De préférence, l'électrode est une électrode formée par au moins un matériau apte à insérer et désinsérer des ions Li<+> et dont le volume augmente lorsque des ions Li<+> sont insérés. Ainsi, le volume vide des cavités d'expansion (4) peut être au moins partiellement rempli par une partie du matériau formant l'électrode, lors de l'insertion des cations Li<+> dans le matériau. Les cavités d'expansion (4) peuvent être formées dans le collecteur de courant (2) ou bien être délimitées par l'électrode. An assembly, for a lithium battery in the form of thin films, comprises a stack (1) formed of a current collector (2) and an electrode (3) and a plurality of expansion cavities (4) for the material forming the electrode. Each expansion cavity (4) comprises at least one wall formed by a part of the electrode (2). Preferably, the electrode is an electrode formed by at least one material capable of inserting and removing Li <+> ions and whose volume increases when Li <+> ions are inserted. Thus, the empty volume of the expansion cavities (4) can be at least partially filled with a part of the material forming the electrode, during the insertion of the Li <+> cations into the material. The expansion cavities (4) can be formed in the current collector (2) or else be delimited by the electrode.

DEVICE FOR ELECTRIC CABLE

L'invention concerne un dispositif de rangement pour câble électrique (6), comportant au moins trois poulies, réparties en deux rangées, respectivement haute (82) et basse (84), la rangée basse étant mobile en translation avec un angle par rapport à la verticale inférieur à 45 degrés. The invention relates to a storage device for an electric cable (6), comprising at least three pulleys, distributed in two rows, respectively high (82) and low (84), the lower row being movable in translation at an angle relative to vertical less than 45 degrees.

FUEL MICROPILE WITH AN ELECTROLYTIC MEMBRANE REINFORCED BY AN ANCHORING ELEMENT AND METHOD FOR MANUFACTURING A FUEL MICROPILE.

SECURE ELECTRICAL CONNECTION SYSTEM

L'invention concerne un système de raccordement d'un objet mobile (8) à alimentation électrique, à un équipement (7) de fourniture d'énergie électrique, comportant, côté équipement de fourniture d'énergie électrique : au moins un premier interrupteur mécanique (59) actionnable par l'objet mobile ; et au moins un premier (52) et un deuxième (54) contacts électriques, reliés à un circuit de fourniture d'une tension de charge, ayant chacun une surface accessible au moins en partie électriquement conductrice, ledit premier interrupteur court-circuitant au repos lesdits contacts à la terre. The invention relates to a system for connecting a movable object (8) with electrical power supply, to an equipment (7) for supplying electrical energy, comprising, on the electrical energy supply equipment side: at least a first mechanical switch (59) operable by the moving object; and at least a first (52) and a second (54) electrical contact, connected to a charging voltage supply circuit, each having a surface accessible at least partly electrically conductive, said first switch shorting at rest said contacts to the ground.

HYDROGEN GENERATOR AND FUEL CELL IMPLEMENTING SUCH A GENERATOR

PROCESS FOR MANUFACTURING A MICRO / NANO-FILTER ON A MICRO / NANO-CHANNEL OR MICRO / NANO-CAVITE CARRIED OUT IN A SILICON SUBSTRATE

L'invention concerne un procédé de fabrication d'un micro/nano-filtre sur un micro/nano-canal ou micro/nano-cavité présents dans une couche de silicium, ledit procédé comprenant une étape de réalisation d'une couche carbonée (4, 40, 400) en surface d'une couche de silicium (1), une étape de porosification (E5, E60, E700) du silicium et de la couche carbonée au niveau d'une zone cible afin d'obtenir une zone cible porosifiée (5, 50, 500) et une étape de nettoyage (E6, E70, E800) de ladite zone cible porosifiée pour retirer le silicium poreux de ladite zone cible et former au moins une cavité (6, 60, 600) fermée en surface par une membrane poreuse (10) carbonée. The invention relates to a method of manufacturing a micro / nano-filter on a micro / nano-channel or micro / nano-cavity present in a silicon layer, said method comprising a step of producing a carbonaceous layer (4 , 40, 400) on the surface of a layer of silicon (1), a step of porosification (E5, E60, E700) of the silicon and of the carbonaceous layer at the level of a target zone in order to obtain a porosified target zone (5, 50, 500) and a step of cleaning (E6, E70, E800) of said porosified target zone to remove the porous silicon from said target zone and to form at least one cavity (6, 60, 600) closed on the surface by a porous carbonaceous membrane (10).

METHOD FOR MANUFACTURING AN ELECTRICAL CONNECTION BASED ON NANOTUBES AND HAVING AIR CAVITIES

Une couche cible (3), avec des orifices, est formée sur une couche conductrice inférieure (2). Dans les orifices, sont formés des nanotubes (6), à partir de la couche conductrice inférieure (2). Une couche d'isolation (8) plane est ensuite déposée sur la couche cible (3), les nanotubes (6) traversant la couche d'isolation. Des cavités d'air (10) sont ensuite formées par dégradation sélective de la couche cible (3). L'agent de dégradation et/ou les sous-produits de dégradation utilisent les parois et les orifices centraux des nanotubes (6) pour passer entre la couche cible (3) et l'extérieur. Après dégradation, la couche conductrice supérieure (11) est formée sur la couche d'isolation (8). Les nanotubes (6) relient alors électriquement les couches conductrices (2, 11). A target layer (3), with orifices, is formed on a lower conductive layer (2). In the orifices, nanotubes (6) are formed from the lower conductive layer (2). A planar insulation layer (8) is then deposited on the target layer (3), the nanotubes (6) passing through the insulation layer. Air cavities (10) are then formed by selective degradation of the target layer (3). The degradation agent and / or the degradation by-products use the walls and the central orifices of the nanotubes (6) to pass between the target layer (3) and the outside. After degradation, the upper conductive layer (11) is formed on the insulation layer (8). The nanotubes (6) then electrically connect the conductive layers (2, 11).

ELECTROCHEMICAL BATTERY MODULE PROVIDING IMPROVED WET ENVIRONMENTAL PROTECTION AND METHOD FOR PRODUCING AT LEAST ONE SUCH MODULE

Module pour batterie électrochimique comportant au moins deux accumulateurs (8) connectés électriquement entre eux par au moins un élément de connexion, des moyens de connexion électrique du module avec l'extérieur et une enveloppe continue (10) réalisée en un matériau polymère diélectrique recouvrant la surface extérieure des accumulateurs (8) et le au moins élément de connexion et ne recouvrant pas les moyens de connexion du module avec l'extérieur, ladite enveloppe continue étant réalisée par trempage de sorte à assurer un enrobage des accumulateurs et dudit au moins élément de connexion. Module for an electrochemical battery comprising at least two accumulators (8) electrically connected to one another by at least one connecting element, means for electrically connecting the module to the outside and a continuous envelope (10) made of a dielectric polymer material covering the outer surface of the accumulators (8) and the at least connecting element and not covering the connection means of the module with the outside, said continuous envelope being made by dipping so as to ensure a coating of the accumulators and said at least one element of connection.

CAPACITIVE CAPACITOR WITH POROUS MATERIAL HAVING AN IMPROVED ARRANGEMENT

BATTERY AND METHOD OF ASSEMBLING

L'invention concerne une batterie (10) comprenant des accumulateurs (12), chaque accumulateur ayant deux extrémités (14) et une portion intermédiaire (16) reliant les deux extrémités, la batterie comprenant au moins une bande (20) entourant au moins en partie les accumulateurs et collée au moins aux portions intermédiaires de deux accumulateurs, la bande étant mécaniquement sous tension et comprenant au moins un film en un matériau isolant électriquement. The invention relates to a battery (10) comprising accumulators (12), each accumulator having two ends (14) and an intermediate portion (16) connecting the two ends, the battery comprising at least one band (20) surrounding at least one the accumulators and glued at least to the intermediate portions of two accumulators, the strip being mechanically tensioned and comprising at least one film of an electrically insulating material.

METHOD FOR ELECTROCHEMICALLY PRODUCING AT LEAST ONE POROUS AREA OF A MICRO AND / OR NANOELECTRONIC STRUCTURE

Device and method for isolating an electric accumulator

Dispositif d’isolement (2) d’accumulateur électrique, adapté à isoler un accumulateur électrique d’un circuit électrique en assurant la continuité de ce circuit électrique, comportant : – une chambre de pontage (10) dans laquelle est disposé un dispositif de pontage (4) qui comporte deux conducteurs de pontage (6, 7) séparés par un interstice (8), l’un des conducteurs de pontage étant raccordé à la deuxième borne (B2) et l’autre conducteur de pontage étant raccordé à la troisième borne (B3) ; – un fusible (3) comportant un conducteur (23) en matériau fusible connecté entre la première borne (B1) et la troisième borne (B3), ce conducteur (23) en matériau fusible étant disposé dans la chambre de pontage (10), et étant adapté à se transférer à l’état liquide sur le dispositif de pontage (4). Figure pour l’abrégé : Fig. 3 Electrical accumulator isolation device (2), suitable for isolating an electrical accumulator from an electrical circuit while ensuring the continuity of this electrical circuit, comprising: - a bridging chamber (10) in which a bridging device is placed (4) which comprises two bridging conductors (6, 7) separated by a gap (8), one of the bridging conductors being connected to the second terminal (B2) and the other bridging conductor being connected to the third terminal (B3); - a fuse (3) comprising a conductor (23) of fusible material connected between the first terminal (B1) and the third terminal (B3), this conductor (23) of fusible material being arranged in the bridging chamber (10), and being adapted to transfer in the liquid state to the bridging device (4). Figure for abstract: Fig. 3

CULTURE SUBSTRATE WITH OXIDIZED SILICONE COATING

REEL FOR RECHARGE OF ELECTRIC VEHICLES.

L'invention concerne un dévidoir de câble électrique pour recharge d'un véhicule automobile, comportant : un boîtier (72) ; un câble (3) dont une première extrémité est reliée à une première fiche de raccordement électrique, liée au boîtier et présente dans une paroi de celui-ci, et dont une deuxième extrémité porte une deuxième fiche de raccordement électrique (34), la première fiche étant, au moins dans une position d'utilisation, saillante de ladite paroi du boîtier pour être branchée à une prise. The invention relates to an electric cable reel for recharging a motor vehicle, comprising: a housing (72); a cable (3), a first end of which is connected to a first electrical connection plug, linked to the housing and present in a wall thereof, and of which a second end carries a second electrical connection plug (34), the first plug being, at least in one position of use, projecting from said wall of the housing to be connected to a socket.

DATA DOWNLOAD BOX FOR ELECTRONIC COMPUTERS

STORAGE FOR ELECTRIC CABLE

MATERIAL BASED ON POLYSILOXANE AND LOW WETTING HYSTERESIS AND PROCESS FOR DEPOSITING SUCH MATERIAL.

Un matériau à base de polysiloxane présente une structure ou une conformation prédéterminée de manière à ce que, dans le polysiloxane, le rapport entre le nombre de liaisons -Si-O- linéaires et le nombre de liaisons -Si-O- cycliques soit inférieur ou égal à 0,4 et, de préférence, inférieur ou égal à 0,3. Une telle conformation de polysiloxane permet d'obtenir une hystérésis de mouillage inférieure à 10°, de préférence inférieure à 5°. Un tel matériau à faible hystérésis de mouillage peut être réalisé par dépôt chimique en phase vapeur, assisté par un plasma dans lequel est injecté un précurseur. Le précurseur est choisi parmi les organosiloxanes cycliques tels que l'octaméthylcyclotétrasiloxane et ses dérivés et parmi les organosilazanes cycliques, tels que l'octaméthylcyclosilazane et ses dérivés. Le rapport entre la densité de puissance dissipée dans le plasma et le débit de précurseur injecté dans le plasma étant inférieur ou égal à 100 W.cm<-2>/mol.min<-1>. A polysiloxane-based material has a predetermined structure or conformation such that, in the polysiloxane, the ratio between the number of -Si-O- linear bonds and the number of -Si-O- cyclic bonds is less or equal to 0.4 and, preferably, less than or equal to 0.3. Such a polysiloxane conformation makes it possible to obtain a wetting hysteresis of less than 10 °, preferably less than 5 °. Such a material with low wetting hysteresis can be produced by chemical vapor deposition, assisted by a plasma in which a precursor is injected. The precursor is chosen from cyclic organosiloxanes such as octamethylcyclotetrasiloxane and its derivatives and from cyclic organosilazanes, such as octamethylcyclosilazane and its derivatives. The ratio between the power density dissipated in the plasma and the flow rate of precursor injected into the plasma being less than or equal to 100 W.cm <-2> /mol.min <-1>.

METHOD FOR ELECTROCHEMICALLY PRODUCING AT LEAST ONE POROUS AREA OF A MICRO AND / OR NANOELECTRONIC STRUCTURE

Procédé de réalisation d'au moins une zone poreuse (ZP) d'une structure microélectronique dans au moins une partie d'une couche active (6) conductrice, la couche active (6) formant une face avant d'un empilement, l'empilement comportant une face arrière (2) en matériau conducteur et une couche isolante (4) interposée entre la couche active (6) et la face arrière (2), ledit procédé comportant les étapes : a) réalisation d'au moins un plot de contact (14) entre la face arrière (2) et la couche active (6) à travers la couche isolante (2), b) mise en place de l'empilement dans un bain électrochimique, c) application d'un courant électrique entre la face arrière (2) et la couche active (6) à travers le plot de contact (14) induisant une porosification d'une zone (ZP) de la couche active (6) au voisinage du plot de contact (14), d) formation de la structure microélectronique. Process for producing at least one porous zone (ZP) of a microelectronic structure in at least a portion of a conductive active layer (6), the active layer (6) forming a front face of a stack, the stack comprising a rear face (2) made of conductive material and an insulating layer (4) interposed between the active layer (6) and the rear face (2), said method comprising the steps of: a) producing at least one stud of contact (14) between the rear face (2) and the active layer (6) through the insulating layer (2), b) placing the stack in an electrochemical bath, c) applying an electric current between the rear face (2) and the active layer (6) through the contact pad (14) inducing a porosity of a zone (ZP) of the active layer (6) in the vicinity of the contact pad (14), d ) formation of the microelectronic structure.

System with at least one mobile unit

Titre : Système de raccordement électrique disjonctable Système de raccordement électrique disjonctable apte à relier électriquement un premier connecteur (11) d’un premier organe et un deuxième connecteur (21) d’un deuxième organe, comprenant :- un élément de raccordement (3) comprenant une première zone de contact (31) avec le premier connecteur (11) et une deuxième zone de contact (32) avec le deuxième connecteur (21), et présentant première configuration dans laquelle l’élément de raccordement (3) met en continuité électrique le premier connecteur (11) et le deuxième connecteur (21), et d’autre part une deuxième configuration dans laquelle l’élément de raccordement (3) ne les met pas en continuité électrique - un dispositif de rétention (4) comprenant un élément fusible (45) présentant une température de fusion, pour libérer l’élément de raccordement (3) lorsque la température de l’élément fusible (45) franchit la température de fusion. Figure pour l’abrégé : Fig. 3 Title: Breakable electrical connection system Breakable electrical connection system capable of electrically connecting a first connector (11) of a first member and a second connector (21) of a second member, comprising:- a connection element (3) comprising a first contact zone (31) with the first connector (11) and a second contact zone (32) with the second connector (21), and having a first configuration in which the connection element (3) brings continuity the first connector (11) and the second connector (21), and on the other hand a second configuration in which the connection element (3) does not put them in electrical continuity - a retention device (4) comprising a fuse element (45) having a melting temperature, to release the connecting element (3) when the temperature of the fuse element (45) exceeds the melting temperature. Figure for abstract: Fig. 3

DEVICE FOR ASSEMBLING ELECTRIC BATTERIES

L'invention concerne un dispositif destiné à l'assemblage d'accumulateurs cylindriques comprenant : une portion tubulaire droite (12) destinée à recevoir l'un des accumulateurs et recouvrant au moins la moitié de la longueur de l'accumulateur ; un élément de maintien (14) adapté à bloquer axialement l'accumulateur par rapport à la portion tubulaire (12) ; et au moins un élément d'accroche mâle (16) et un élément d'accroche femelle (18), l'élément d'accroche femelle (18) étant adapté à coopérer avec un élément d'accroche mâle (16) d'un autre dispositif. The invention relates to a device for assembling cylindrical accumulators comprising: a straight tubular portion (12) for receiving one of the accumulators and covering at least half the length of the accumulator; a holding member (14) adapted to axially lock the accumulator with respect to the tubular portion (12); and at least one male catcher (16) and a female catcher (18), the female catcher (18) being adapted to cooperate with a male catcher (16) of a male catcher other device.

METHOD OF MAKING AN INTERFACE FOR TEMPORARILY ASSEMBLING A MICROELECTRONIC MEDIUM AND A HANDLING HANDLE, AND TEMPORARY ASSEMBLY INTERFACE

Procédé de réalisation d'une interface d'assemblage temporaire d'un support microélectronique et d'une poignée, comportant au moins : - la formation d'une première couche comportant au moins un matériau apte à libérer au moins une espèce chimique sous l'action d'un traitement physicochimique , - la formation d'une deuxième couche comportant au moins un matériau apte à recevoir le au moins une espèce chimique de sorte à provoquer sa fragilisation, - la fragilisation de l'interface par application d'un traitement thermique, telle que la au moins une espèce est libérée de la première couche et réagit avec tout ou partie du matériau de la deuxième couche. Process for producing a temporary assembly interface for a microelectronic support and a handle, comprising at least: the formation of a first layer comprising at least one material capable of releasing at least one chemical species under the action of a physicochemical treatment, - formation of a second layer comprising at least one material capable of receiving the at least one chemical species so as to cause its embrittlement, - embrittlement of the interface by application of a heat treatment such that the at least one species is released from the first layer and reacts with all or part of the material of the second layer.

METHOD FOR FORMING A MULTILAYER STRUCTURE

Le procédé de formation d'une structure multicouches sur un substrat comprend la prévision d'un empilement comprenant successivement une couche de blocage de trous d'électrons, une première couche 6 en matériau semi-conducteur dopé de type N ayant une concentration en éléments dopants supérieure ou égale à 10 atomes/cm ou dopé de type P, et une deuxième couche en matériau semi-conducteur de nature différente. Un plot de contact électrique latéral 12 entre la première couche 6 et le substrat est réalisé et le matériau de la première couche est soumis à un traitement anodique dans un électrolyte 18. The method of forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer 6 of N-type doped semiconductor material having a concentration of doping elements. greater than or equal to 10 atoms / cm or P-type doped, and a second layer of semiconductor material of a different nature. A lateral electrical contact pad 12 between the first layer 6 and the substrate is produced and the material of the first layer is subjected to an anodic treatment in an electrolyte 18.

Method for characterizing microorganisms by transmission imaging

Procédé de caractérisation de microorganismes, comportant : dépôt de microorganismes (10i) sur un support poreux (15), le support poreux comportant une première face (151) et une deuxième face (152), le support poreux comportant des pores (153) s’étendant de la première face jusqu’à la deuxième face ; disposition du support poreux à la surface d’un milieu nutritif (17, 172), contenu dans une enceinte (16), la deuxième face étant disposée au contact du milieu nutritif ; déplacement du support poreux par rapport à l’enceinte ; positionnement du support poreux entre une source de lumière infra-rouge (11) et un capteur d’image (20), la source de lumière étant configurée pour émettre une onde lumineuse incidente dans une longueur d’onde d’émission (λ); illumination des microorganismes, retenus sur support poreux, par la source de lumière et acquisition d’une image (Iλ, Iλ(t2)) par le capteur d’image, l’image permettant une observation d’au moins une colonie de microorganismes ; caractérisation de la colonie de microorganismes à partir de l’image acquise lors de l’étape e). Figure 1B.

DEVICE FOR DISPENSING A FLUID WITH A THERMOELECTRIC MODULE.

Diamond like carbon coating for a mechanical component, made up of layers of amorphous hydrogenated carbon and silicon carbide to improve wear and friction resistance

Coating for a mechanical component comprises at least one outer layer (5) of hydrogenated amorphous carbon. The coating (1) is made up of a first layer (3) of amorphous hydrogenated silicon carbide in contact with the mechanical component (2), a stack (4) made up of alternate layers (4a, 4b), respectively of amorphous hydrogenated carbon and amorphous hydrogenated silicon carbide, disposed between the first layer and the outer layer. An independent claim is also included for the deposition of the coating onto a mechanical component.

semiconductor structure comprising a buried porous layer, for RF applications

L’invention concerne une structure semi-conductrice (10) pour applications radiofréquences comprenant : - un substrat support (2) en silicium comportant une couche méso-poreuse (3), - une couche diélectrique (4) disposée sur la couche méso-poreuse (3), - une couche superficielle (5) disposée sur la couche diélectrique (4). La structure (10) est remarquable en ce que : - la couche méso-poreuse (3) comporte des pores creux dont les parois internes sont majoritairement tapissées d’oxyde, et présente une épaisseur comprise entre 3 et 40 microns et une résistivité supérieure à 20 kohm.cm sur toute son épaisseur, - le substrat support (2) présente une résistivité comprise entre 0.5 et 4 ohm.cm. L’invention concerne également un procédé de fabrication d’une structure semi-conductrice (10). Figure à publier avec l’abrégé : F igure 1 The invention relates to a semiconductor structure (10) for radiofrequency applications comprising: - a support substrate (2) in silicon comprising a mesoporous layer (3), - a dielectric layer (4) arranged on the mesoporous layer (3), - a surface layer (5) arranged on the dielectric layer (4). The structure (10) is remarkable in that: - the mesoporous layer (3) comprises hollow pores whose internal walls are mainly lined with oxide, and has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm.cm over its entire thickness, - the support substrate (2) has a resistivity of between 0.5 and 4 ohm.cm. The invention also relates to a method of manufacturing a semiconductor structure (10). Figure to be published with the abstract: F igure 1

ELECTROCHEMICAL BATTERY WITH IMPROVED OPERATING SAFETY IN A WET ENVIRONMENT

Batterie comportant plusieurs accumulateurs (2) connectés entre eux, au moins un support isolant électrique (36) sur lequel un disposé une partie au moins des accumulateurs, ledit support (36) comportant une face supérieure sur laquelle repose la partie au moins des accumulateurs et une face inférieure, et un rebord (36.1) orienté vers le bas de sorte à provoquer une rupture d'un film de liquide pouvant se former entre la face inférieure et la face supérieure. Battery comprising several accumulators (2) connected together, at least one electrical insulating support (36) on which at least one part of the accumulators is arranged, said support (36) having an upper face on which the at least part of the accumulators and a lower face, and a flange (36.1) facing downwards so as to cause a rupture of a film of liquid that can form between the lower face and the upper face.

DEVICE FOR SEPARATING MOLECULES AND METHOD FOR MANUFACTURING THE SAME.

METHOD FOR MANUFACTURING NANOSTRUCTURE BASED ON INTERCONNECTED NANOWIRES, NANOSTRUCTURE AND USE AS A THERMOELECTRIC CONVERTER

Device with a hydrophobic and/or lipophobic surface formed of a carpet of nanofibers where the fibres and the surface between them are coated with a polymer film

Device with a hydrophobic and/or lipophobic surface formed of a carpet of nanofibers (20) that are totally sheathed in a hydrophobic and/or lipophobic continuous polymer film and the surface (22) between the nanofibers is covered with a layer of the same polymer, where the nanofibers are grown by depositing a catalyst on the surface, heating it to form droplets and adding a hydrocarbon precursor, the nanofibers grow where the droplets are and are then coated with polymer, is new. An independent claim is also included for making such a device, by depositing nanofibers onto a surface of the device, then sheathing the nanofibers with a hydrophobic and/or lipophobic polymer by a dry physical deposit method or by electro-grafting. This is done in the following stages: deposit of the carbon nanofibers onto one surface of a piece by depositing a catalyst by a PVD method, a target made of a catalytic material bombarded with a flow of ionized argon, the atoms of the target which are ejected cover the surface. The piece is then put into a CVD oven under vacuum to make the carbon nanofiber deposit. The catalyst is made into droplets under the effect of the rising temperature, a hydrocarbon precursor is introduced into the vessel, the nanofibers are grown at the points where the catalyst is in a droplet. The nanofibers are then coated with a hydrophobic polymer using a PECVD technique or by electro-grafting.

METHOD FOR MANUFACTURING A STACK OF ELECTRONIC DEVICES

Current generating device for use on roof of building, has shield arranged in front of active surface of element and designed to stop infrared wavelengths at level of active surface of element

The device has a photovoltaic element (1) whose upper active surface is oriented toward the Sun for generating current. The element is realized by thermoelectric modules i.e. thermocouples. A shield (6) is arranged in front of the active surface of the element and designed to stop infrared wavelengths at a level of the active surface of the element, where the wavelengths are of 1 to 10 micrometers. The shield is made of transparent metal oxide such as indium tin oxide, zinc oxide or boron or aluminum doped zinc oxide.

METHOD FOR FORMING A MULTILAYER STRUCTURE

Le procédé de formation d'une structure multicouches sur un substrat comprend la prévision d'un empilement comprenant successivement une couche de blocage de trous d'électrons, une première couche 6 en matériau semi-conducteur dopé de type N ayant une concentration en éléments dopants supérieure ou égale à 10 atomes/cm ou dopé de type P, et une deuxième couche en matériau semi-conducteur de nature différente. Un plot de contact électrique latéral 12 entre la première couche 6 et le substrat est réalisé et le matériau de la première couche est soumis à un traitement anodique dans un électrolyte 18. The method of forming a multilayer structure on a substrate comprises providing a stack comprising successively an electron hole blocking layer, a first layer 6 of N type doped semiconductor material having a doping element concentration. greater than or equal to 10 atoms / cm or doped P-type, and a second layer of semiconductor material of different nature. A lateral electrical contact pad 12 between the first layer 6 and the substrate is produced and the material of the first layer is subjected to anodic treatment in an electrolyte 18.

Post-deposition treatment to enhance properties of Si-O-C low K films

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

DEVICE FOR DISPENSING A FLUID WITH A THERMOELECTRIC MODULE.

Le dispositif de distribution d'un fluide comporte une première cavité (1a) à une première pression et une seconde cavité (1b) à une seconde pression inférieure à la première pression. Une cloison (2) sépare la première cavité (1a) de la seconde cavité (1b) et une vanne de restriction (4) est disposé entre les première et seconde cavités (1a, 1b). La cloison (2) comporte un module thermoélectrique (12) ayant un côté chaud en contact thermique avec la première cavité (1a) et un côté froid en contact thermique avec la seconde cavité (1b). The fluid delivery device has a first cavity (1a) at a first pressure and a second cavity (1b) at a second pressure lower than the first pressure. A partition (2) separates the first cavity (1a) from the second cavity (1b) and a restriction valve (4) is disposed between the first and second cavities (1a, 1b). The partition (2) comprises a thermoelectric module (12) having a hot side in thermal contact with the first cavity (1a) and a cold side in thermal contact with the second cavity (1b).

Hydrogen generating fuel cell cartridges

A GAS-GENERATING APPARATUS INCLUDES A CARTRIDGE INCLUDING A RESERVOIR HAVING A FIRST REACTANT AND A REACTION CHAMBER, AND A RECEIVER THAT CAN INCLUDE A FLOW CONTROL DEVICE. THE RECEIVER IS ADAPTED TO RECEIVE THE CATRIDGE AND TO TRANSPORT THE FIRST REACTANT TO THE REACTION CHAMBER AFTER CONNECTION WITH THE CARTRIDGE. THE FLOW CONTROL DEVICE IS ADAPTED TO STOP THE TRANSPORT OF REACTANT WHEN THE PRESSURE IN THE REACTION CHAMBER REACHES A PREDETERMINED PRESSURE..

DEVICE FOR RECHARGING ELECTRIC VEHICLE.

L'invention concerne un dévidoir de câble électrique pour recharge d'un véhicule automobile, comportant : un boîtier (72) ; un câble (3) dont une première extrémité est reliée à une première fiche de raccordement électrique, liée au boîtier et présente dans une paroi de celui-ci, et dont une deuxième extrémité porte une deuxième fiche de raccordement électrique (34), la première fiche étant, au moins dans une position d'utilisation, saillante de ladite paroi du boîtier pour être branchée à une prise. The invention relates to an electric cable reel for charging a motor vehicle, comprising: a housing (72); a cable (3) having a first end connected to a first electrical connection plug, connected to the housing and having a wall thereof, and a second end of which carries a second electrical connection plug (34), the first plug being, at least in a position of use, protruding from said wall of the housing to be connected to a socket.

METHOD FOR MANUFACTURING A STACK OF ELECTRONIC DEVICES

Ce procédé comporte les étapes : a) prévoir une première structure comportant successivement un substrat (10; 100, 101), un dispositif électronique (11), une couche diélectrique (12) ; b) prévoir une deuxième structure comportant successivement un substrat, une couche active (21), une couche intercalaire, une première couche semi-conductrice (23), une deuxième couche semi-conductrice poreuse (240); c) coller les première et deuxième structures par une adhésion directe entre la couche diélectrique (12) et la deuxième couche semi-conductrice poreuse (240) ; d) retirer le substrat de la deuxième structure de manière à exposer la couche active (21); e) introduire des dopants dans la première couche semiconductrice (23) ou dans la couche active (21) ; f) irradier la première couche semiconductrice (23) par un laser (L) impulsionnel de manière à activer thermiquement les dopants correspondants. This method comprises the steps of: a) providing a first structure successively comprising a substrate (10; 100, 101), an electronic device (11), a dielectric layer (12); b) providing a second structure successively comprising a substrate, an active layer (21), a spacer layer, a first semiconductor layer (23), a second porous semiconductor layer (240); c) bonding the first and second structures by direct adhesion between the dielectric layer (12) and the second porous semiconductor layer (240); d) removing the substrate from the second structure so as to expose the active layer (21); e) introducing dopants into the first semiconductor layer (23) or into the active layer (21); f) irradiating the first semiconductor layer (23) with a pulsed laser (L) so as to thermally activate the corresponding dopants.

PROCESS FOR PRODUCING AIR CAVITIES USING NANOTUBES

semiconductor structure comprising a buried porous layer, for RF applications

L’invention concerne une structure semi-conductrice (10) pour applications radiofréquences comprenant : - un substrat support (2) en silicium comportant une couche méso-poreuse (3), - une couche diélectrique (4) disposée sur la couche méso-poreuse (3), - une couche superficielle (5) disposée sur la couche diélectrique (4). La structure (10) est remarquable en ce que : - la couche méso-poreuse (3) comporte des pores creux dont les parois internes sont majoritairement tapissées d’oxyde, et présente une épaisseur comprise entre 3 et 40 microns et une résistivité supérieure à 20 kohm.cm sur toute son épaisseur, - le substrat support (2) présente une résistivité comprise entre 0.5 et 4 ohm.cm. L’invention concerne également un procédé de fabrication d’une structure semi-conductrice (10). Figure à publier avec l’abrégé : F igure 1 The invention relates to a semiconductor structure (10) for radiofrequency applications comprising: - a support substrate (2) in silicon comprising a mesoporous layer (3), - a dielectric layer (4) arranged on the mesoporous layer (3), - a surface layer (5) arranged on the dielectric layer (4). The structure (10) is remarkable in that: - the mesoporous layer (3) has hollow pores whose internal walls are mainly lined with oxide, and has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm.cm over its entire thickness, - the support substrate (2) has a resistivity of between 0.5 and 4 ohm.cm. The invention also relates to a method of manufacturing a semiconductor structure (10). Figure to be published with the abstract: F igure 1

ULTRAFINE IMPLANTABLE ENERGY SOURCE.

Source d'énergie implantable comprenant au moins un sous-système de stockage d'énergie (171) réalisé sous la forme d'un empilement de couches minces (175) sur un substrat (176), caractérisée en ce que ledit sous-système de stockage d'énergie présente une pluralité d'ouvertures traversantes (174) pour permettre le développement et le passage de vaisseaux sanguins. De préférence, la source d'énergie présente, sur au moins 80% de sa surface, une épaisseur inférieure ou égale à 1 mm. An implantable power source comprising at least one energy storage subsystem (171) formed as a stack of thin layers (175) on a substrate (176), characterized in that said subsystem of Energy storage has a plurality of through apertures (174) for the development and passage of blood vessels. Preferably, the energy source has, on at least 80% of its surface, a thickness less than or equal to 1 mm.

Method for producing a capacitive sensor

A method for producing a capacitive sensor, comprising steps consisting of: (a) forming trenches (105) in a support (100) made from at least one given material by etching said at least one given material, (b) making said given material porous at the walls and the bottom of the trenches, (c) filling the trenches (105) with a conductive material (110).

MANUFACTURING PROCEDURE OF A NANOESTRUCTURE BASED ON INTERCONNECTED NANOCABLES, NANOESTRUCTURE AND ITS USE AS A THERMOELECTRIC TRANSFORMER.

Procedimiento de fabricación de una nanoestructura que comprende una etapa de crecimiento para formar en un sustrato una red de nanocables (7) de material semiconductor impurificado de un primer tipo (n), estando cada nanocable (7), al final de la etapa de crecimiento, coronado por una gotita (6) de material eléctricamente conductor que ha servido de catalizador durante la etapa de crecimiento, procedimiento caracterizado porque comprende a continuación una etapa de formación de una capa (10) de material eléctricamente aislante alrededor de cada nanocable (7), no recubriendo dicha capa la gotita correspondiente y una etapa de recubrimiento de la capa (10) de material aislante y de la gotita (6) asociadas a cada nanocable (7) por medio de una capa (9) de material semiconductor impurificado de un segundo tipo (p), constituyendo la gotita una unión eléctrica individual entre el nanocable (7) asociado y la capa (9) de material semiconductor impurificado del segundo tipo.

Miniaturizable hydrogen generator, e.g. for supplying fuel cell, has mixing chamber connected to water supply, metal hydride-based fuel store and catalyst-containing reaction chamber

A hydrogen generator, comprising a storage compartment (5) for metal hydride-based fuel, a water supply system (6) and a reaction chamber (7) containing a catalyst, includes a mixing chamber (9) with a first inlet (11) connected to the water supply, a second inlet (12) connected to the fuel supply and an outlet (13) connected to the reaction chamber.

Method for minimising corner effect by densifying the insulating layer

DEPOSITION OF A THIN LAYER OF CU (IN, GA) X2 BY CATHODE SPRAY

DEVICE FOR SEPARATING MOLECULES AND METHOD FOR MANUFACTURING THE SAME.

Une molécule est séparée d'un échantillon liquide contenant ladite molécule et au moins une molécule additionnelle ayant un diamètre hydrodynamique supérieur au diamètre hydrodynamique de la molécule à séparer, à l'aide d'un dispositif de séparation (1) comportant un substrat (2), au moins un canal de circulation (7) ménagé dans ledit substrat (2) et au moins un nanotube (3), associé à ladite molécule à séparer et formé sur une surface libre (2a) du substrat (2). La séparation est réalisée à l'aide du canal interne (4) d'un nanotube (3), tel qu'un nanotube de carbone, présentant un diamètre efficace choisi de manière prédéterminée et contrôlée. Le diamètre efficace du canal interne (4) est choisi pour être supérieur au diamètre hydrodynamique de la molécule à séparer et inférieur au diamètre hydrodynamique des molécules additionnelles de diamètres hydrodynamiques supérieurs. A molecule is separated from a liquid sample containing said molecule and at least one additional molecule having a hydrodynamic diameter greater than the hydrodynamic diameter of the molecule to be separated, by means of a separation device (1) comprising a substrate (2). ), at least one circulation channel (7) formed in said substrate (2) and at least one nanotube (3), associated with said molecule to be separated and formed on a free surface (2a) of the substrate (2). The separation is carried out using the internal channel (4) of a nanotube (3), such as a carbon nanotube, having an effective diameter chosen in a predetermined and controlled manner. The effective diameter of the internal channel (4) is chosen to be greater than the hydrodynamic diameter of the molecule to be separated and less than the hydrodynamic diameter of the additional molecules of higher hydrodynamic diameters.

PLUG FOR ELECTRIC CABLE

L'invention concerne une poignée (2) de raccordement d'un câble électrique (3), comportant, à une première extrémité longitudinale, une fiche (22) électriquement connectée au câble et destinée au branchement à une prise électrique, une entrée (24) du câble dans la poignée étant située dans une première moitié longitudinale de la poignée, côté fiche. The invention relates to a handle (2) for connecting an electric cable (3), comprising, at a first longitudinal end, a plug (22) electrically connected to the cable and intended for connection to an electrical socket, an input (24). ) of the cable in the handle being located in a first longitudinal half of the handle, plug side.