14-11-2013 дата публикации
Номер: US20130302965A1
Принадлежит:
An integrated circuit structure with a metal-to-metal capacitor and a metallic device such as a resistor, effuse, or local interconnect where the bottom plate of the capacitor and the metallic device are formed with the same material layers. A process for forming a metallic device along with a metal-to-metal capacitor with no additional manufacturing steps. 1. A method of fabricating an integrated circuit , comprising;depositing a metallic material;depositing a conductive etch stop material on top of said metallic material;depositing a dielectric on top of said conductive etch stop material;depositing a top plate material on said dielectric;forming a first photoresist pattern over said top plate material to define a top plate of a capacitor;etching away portions of said top plate material and said dielectric exposed by said first photoresist pattern and stopping in said conductive etch stop material.forming a second photoresist pattern to define a bottom plate of said capacitor and to define a metallic device; andetching away portions exposed said etch stop material and said metallic material exposed by said second photoresist pattern to form said bottom plate of the capacitor and said metallic device.2. The method of wherein said metallic device is a resistor and said metallic material is selected from the group consisting of TiAl claim 1 , Ti claim 1 , TiN claim 1 , Ta claim 1 , TaN claim 1 , Ir/TiAlN claim 1 , Ir claim 1 , TiAlN claim 1 , SiCr claim 1 , NiCr claim 1 , and TiWN.3. The method of wherein said conductive etch stop material is selected from the group consisting of TiAlON claim 1 , TiAlN claim 1 , and TiAlO.4. The method of wherein said conductive etch stop material has a resistivity about 10 times greater than said metallic material.5. The method of where said metallic material is composed of TiAl with a Ti to Al atomic ratio between 80:20 and 50:50 and where conductive etch stop material is TiAlON where Ti to Al ratio in said TiAlON is within 20% of ...
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