Method for preparing graphene membrane material through in-site metal catalytic decomposition and transfer

The invention relates to a method for preparing a graphene membrane material through in-site metal catalytic decomposition and transfer. The method comprises the specific steps of dissolving polymethyl methacrylate (PMMA) into an acetone solution, dropping the PMMA solution on a metal substrate to form a PMMA film, putting a quartz base on the PMMA film, conducting high temperature annealing on the PMMA film in an annealing furnace with 99.99% nitrogen, decomposing the PMMA film into the graphene film under the catalysis of the metal, and evaporating and transferring the graphene film to the quartz base at high temperature. According to the method provided by the invention, no other assistant transferring substance is used, no new impurity is introduced to pollute or damage the structure of the graphene, compared with other methods, the method is simple and convenient, and saves time; the method is not toxic or harmful, and an operator cannot be hurt.

Method for preparing zinc oxide film enhanced by ultraviolet emission

This invention relates to a method for preparing a zinc oxide membrane with ultraviolet emission improvement. It is characterized that: metal zinc with purity of 99.999% is used as cathode target, onto which doped is 0.1-5 wt.% of spectral purity metal iron, and using magnetic control reaction sputtering method to produce this inventive products. This invention has advantages of: obvious improvement of ultraviolet emission, pure iron as doping agent, argon as working gas, oxygen as reaction raw material, so raw materials are arailble.

Preparation method of graphene film

The invention discloses a preparation method of a graphene film. The preparation method comprises the steps: firstly, dissolving polymethyl methacrylate into acetone to obtain a polymethyl methacrylate and acetone liquid; then, dropwise adding the polymethyl methacrylate and acetone liquid on a metal to form a layer of polymethyl methacrylate film; covering a quartz glass slide on the polymethyl methacrylate film; then, simultaneously placing the metal sheet, the polymethyl methacrylate film on the metal sheet and the covered quartz glass slide into a high-temperature annealing furnace with a nitrogen condition, and carrying out high-temperature annealing while controlling the temperature at 800-1000 DEG C, wherein the polymethyl methacrylate is decomposed into a graphene film under the catalytic action of the metal in the metal film, and the graphene film is evaporated at a high temperature and is transferred on the quartz glass slide; and next, naturally cooling to room temperature to ...

Preparation method of tunable surface enhanced Raman scattering substrate

The invention relates to a preparation method of a tunable surface enhanced Raman scattering substrate. The preparation method comprises the following steps: cleaning a K9 glass substrate to remove oil stain impurities on the surface of the substrate; putting the K9 glass substrate into an ion beam etching system, setting the ion beam bombardment angle, the etching current, the acceleration voltage and the etching time, and performing ion beam etching on the substrate to form a substrate with a surface having a certain roughness; cleaning the etched substrate and drying in a vacuum deposition system; and putting the dried etched substrate into a direct-current sputtering deposition system, setting the deposition working power and the film deposition time, uniformly depositing currency metals on the surface of the etched substrate to form a surface enhanced layer substrate, and taking out the deposited film substrate. According to the preparation method, a surface enhanced layer does not ...

Surface-enhanced Raman scattering substrate, and preparation method and application thereof

The invention discloses a surface-enhanced Raman scattering substrate, and a preparation method and application thereof. The substrate comprises an optical glass base sheet, a currency metal layer on the surface of the optical glass base sheet, and a graphene layer on the surface of the currency metal layer. The preparation method comprises the following steps: S1, cleaning the optical glass base sheet; S2, depositing the currency metal film layer on the optical glass surface; and S3, dropwise adding a graphene suspension on the currency metal film layer and baking to dry. The application means the application of the substrate to detect rhodamine B molecule in a solution. According to the provided surface-enhanced Raman scattering substrate and the preparation method, the substrate surface does not need early-stage roughing processing, the preparation technology is simple, the cost is low, the production period is short, the sensitivity is high, and the substrate is easy to store, and the ...

Display touch screen structure and method for producing the same

The invention provides a display touch-screen structure and a manufacturing method thereof. The touch-screen structure comprises base chemically-reinforced glass, an upper conductive layer and a lower conductive layer; the upper conductive layer comprises a PET film and an ITO film coated on the surface of the PET film; the lower conductive layer is formed by the ITO film which is directly manufactured on the surface of the base chemically-reinforced glass; and isolating points are arranged between two ITO films. The manufacturing method comprises the following steps: a continuous magnetron sputtering coating machine and an ITO ceramic target are adopted to coat the ITO film on the chemically-reinforced glass; the work gas is Ar and the pressure is between 0.1 and 1 Pa; the coating temperature is between 100 and 390 DEG C; and the coating pace is between 1.5 and 6 minutes. The invention not only simplifies the manufacturing process of the touch-screen, enhances the yield of products and ...

Process for preparing lithium gallate crystal

A process for preparing lithium gallate crystal includes sealing the substance (lithium carbonate) able to provide volatile lithium source and the substance (Ga2O3 or metal Ga) in tem-controllable furnace, constant-temp heating, and gas phase reaction for several hours. Its advantages include short reaction time, high quality and purity of product and simple process.

氮化镓陶瓷体的制备方法

... 本发明属于氮化镓陶瓷体的制备方法。该方法将氮化镓粉末成型后，与氨基锂一起组装、密封在超高压装置中，通过高压烧结氮化镓粉末而获得其陶瓷体。 ...

Optical thin film capable of enhancing ultraviolet response capability of charge coupled device and preparation of optical thin film

The invention provides an optical thin film capable of enhancing the ultraviolet response capability of a charge coupled device. The optical thin film comprises a bottom reflector, a fluorescent material layer and a top reflector, wherein ultraviolet receiving face of the charge coupled device is plated with the bottom reflector, the surface of the bottom reflector is plated with the fluorescent material layer, and the surface of the fluorescent material layer is plated with the top reflector; the top reflector is sequentially composed of nine high-refractive-index material layers and eight low-refractive-index material layers in alternately overlapping mode from the fluorescent material layer to the outer side, and the bottom reflector is sequentially composed of six high-refractive-index material layers and five low-refractive-index material layers in alternately overlapping mode. The invention further provides a preparation method of the optical thin film. The optical thin film can enhance ...

Method for preparing amorphous transparent zinc oxide film

The invention provides a method for preparing an amorphous transparent zinc oxide film. The method is characterized by comprising the following steps: cleaning a substrate, namely sequentially cleaning the substrate by using acetone, absolute ethyl alcohol and deionized water, and putting the substrate on a sample rack in a magnetron sputtering chamber; setting heavy metal doping, namely fixing a molybdenum wire on a zinc target, wherein the distribution shape of the molybdenum wire is in a circle center radiation shape, and the molybdenum doping amount is controlled to be in a range from 0.5 to 10 percent; vacuumizing, namely vacuumizing the magnetron sputtering chamber; regulating the sputtering atmosphere, namely respectively inputting oxygen and argon as reactant gas and sputtering gas into the magnetron sputtering chamber, wherein the oxygen purity is 99.99 percent, the argon purity is over 99.95 percent, and a ratio of the oxygen flow to the argon flow is controlled to be 3:2 to 4 ...

Sterilizing device and preparation method of porous composite board of sterilizing device

The invention provides a sterilizing device and a preparation method of a porous composite board of the sterilizing device. The sterilizing device is characterized by comprising a static field part, wherein the static field part comprises a metal board and a porous composite board which are arranged opposite to each other, the metal board is connected with a negative electrode of a power supply, the porous composite board is formed by laminating a porous layer and a metal base layer, the metal base layer is connected with a positive electrode, the porous layer faces the metal board, bacteria are contained between the porous layer and the metal board, a plurality of micropores are arrange on the surface of the porous layer, and the diameter of the micropore is less than that of the bacterium. The preparation method of the porous composite board is as follows: conducting anodizing for the first time after annealing an aluminum foil to form the composite board with an aluminium oxide porous ...

Process for preparing fuel derived from urban domestic garbage

Process for preparing gallium nitride ceramics

A process for preparing gallium nitride ceramic includes such steps as preparing gallium nitride powder, mixing with lithium amide, loading in ultrahigh-pressure equipment, sealing, and high-pressuresintering.

Computer control device for plating clamp

One kind of coating jig computer control unit, its composition is: A computer after the main line and the I/O expansion trough connection, this I/O expansion trough connects the switch quantity merit to put the output board again, this switch quantity merit puts the output board to be divided two groups outputs, two-dimensionally realizes the jig to revolve, group through second step of transmission machine driver with second step transmission machine connected, a continuously angular jig place steel plate fixes on the second step of transmission machine revolution axis, another group with first step transmission machine is connected through the first step of transmission machine driver, this first step transmission machine fixes in on the jig place another steel plate which states, On this first transmission machine revolution axis fixes the jig which states, states the first step of transmission machine driver and the second step of transmission machine driver power source provides by ...

Method for preparing AZO film

The invention provides a method for preparing an AZO film. The method is characterized by comprising the following steps: (1) carrying out magnetron sputtering: in direct-current magnetron sputtering equipment, by adopting an Al2O3 doped ZnO ceramic target as a cathode sputtering target and adopting argon gas as working gas, enabling argon gas to bombard the cathode sputtering target at the working gas pressure of 10<-2> to 10<-1>Pa, carrying out pre-sputtering for 8-10 minutes, taking a quartz substrate as an anode after the process of pre-sputtering is ended, enabling the quartz substrate to automatically rotate at the rate of 3-6r/min, enabling argon gas to bombard the cathode sputtering target, and carrying out magnetron sputtering for 8 minutes, so as to deposit an AZO film on the quartz substrate; (2) etching a grating microstructure: coating the surface of the AZO film with a layer of photoresist, covering the surface of the photoresist with a grating mask plate, exposing the photoresist ...

Process for preparing lithium gallium oxide crystal

Preparation method of metallic silver thin film with nanometer microcavity structure

The invention relates to a preparation method of a metallic silver thin film with a nanometer microcavity structure. The preparation method comprises the following steps: selecting a metallic silver target and depositing the metallic silver target on a substrate by virtue of a direct current sputtering deposition system, thus obtaining the metallic silver thin film with the nanometer microcavity structure by using ion beam etching. In the method, no other assistant chemical substances are needed, thus new impurities can not be introduced to pollute the microcavity structure of the metallic silver thin film. Compared with other methods, the method in the invention is simple and time-saving; the preparation method in the invention is no-toxic and non-poisonous and can not cause damage to operators.