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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 55. Отображено 55.
24-01-2002 дата публикации

Magnetic random access memory

Номер: US20020008987A1
Автор: Hideaki Numata, Koichi Takeda
Принадлежит: NEC Corporation

A matrix array of memory cells are located on intersections of word lines and sense lines. Each memory cell includes a magnetoresistance element and a switching element which establishes a resistive connection between a corresponding sense line and the magnetoresistance element when a corresponding word line is addressed. A number of sense circuits are respectively correspond to the sense lines. Each sense circuit includes a capacitive element connected to the corresponding sense line and a switching element for applying a voltage to the capacitive element and removing the voltage when the corresponding sense line is addressed, thereby discharging energy from the capacitive element through the resistive connection to the magnetoresistance element. The voltage developed across the capacitive element of each sense circuit is used to produce a binary output signal representative of information stored in an address memory cell.

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Номер записи: 1
24-10-2002 дата публикации

Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect

Номер: US20020155627A1
Автор: Takeshi Okazawa, Hideaki Numata
Принадлежит:

A method of manufacturing a magnetic random access memory for excluding stress-induced defects in memory cells. The method is composed of forming a first magnetic film over a substrate, forming a tunnel insulating film on the first magnetic film such that the tunnel insulating film has a curvature, forming a second magnetic film on the tunnel insulating film, and etching the first magnetic film, the tunnel insulating film and the second magnetic film to form a memory cell. The etching is executed such that the curvature is excluded from the memory cell.

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Номер записи: 2
19-04-2011 дата публикации

Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory

Номер: US0007929342B2
Автор: Hideaki Numata, Norikazu Ohshima, Tetsuhiro Suzuki, Tadahiko Sugibayashi, Nobuyuki Ishiwata, Shunsuke Fukami, NUMATA HIDEAKI, OHSHIMA NORIKAZU, SUZUKI TETSUHIRO, SUGIBAYASHI TADAHIKO, ISHIWATA NOBUYUKI, FUKAMI SHUNSUKE
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer. A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching ...

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Номер записи: 3
06-12-2001 дата публикации

Magnetic random access memory circuit

Номер: US20010048608A1
Автор: Hideaki Numata, Kouichi Takeda
Принадлежит: NEC CORPORATION

In a magnetic random access memory circuit, the potential of all sense lines 121 to 124 are equalized, and the potential of all not-selected word lines 133, 135, 136 are equalized and the selected word line 134 is grounded so that a previously charged capacitor 114 is discharged by a current path passing from the capacitor 114 through a MOS transistor 118 maintaining the potential of the sense line 122 at a constant voltage lower than a break voltage, through the selected sense line 122 , through the selected magneto-resistive element 142 and through the selected word line 134 . Thus, a voltage applied to the magneto-resistive element is maintained at a level smaller than a voltage breaking the magneto-resistive elements or a voltage remarkably deteriorating the characteristics of the magneto-resistive elements because of a biasing effect when the tunnel magneto-resistive element is used, and on the other hand, a high precise and high speed reading can be realized.

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Номер записи: 4
19-05-2011 дата публикации

FIELD EFFECT TRANSISTOR AND CIRCUIT DEVICE

Номер: US20110114914A1
Автор: Hideaki Numata, Satoru Toguchi, Hiroyuki Endoh
Принадлежит:

An end portion (104a) of a first source electrode (104) and an end portion (105a) of a first drain electrode (105) face each other on a gate insulating film (103) via a channel formation region. The first source electrode (104) and first drain electrode (105) extend over steps, and the end portion (104a) and end portion (105a) face each other on the gate insulating film (103). The highest portions of the end portion (104a) and end portion (105a) are formed higher than the upper surface of the gate insulating film (103) serving as the channel formation region. A field-effect transistor of this invention also includes a second source electrode (107) which is formed in contact with the channel layer (106) and connects the first source electrode (104) and channel layer (106), and a second drain electrode (108) which is formed in contact with the channel layer (106) and connects, the first drain electrode (105) and channel layer (106).

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Номер записи: 5
08-10-2002 дата публикации

Magnetic random access memory

Номер: US0006462981B2
Автор: Hideaki Numata, Koichi Takeda, NUMATA HIDEAKI, TAKEDA KOICHI
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

A matrix array of memory cells are located on intersections of word lines and sense lines. Each memory cell includes a magnetoresistance element and a switching element which establishes a resistive connection between a corresponding sense line and the magnetoresistance element when a corresponding word line is addressed. A number of sense circuits are respectively correspond to the sense lines. Each sense circuit includes a capacitive element connected to the corresponding sense line and a switching element for applying a voltage to the capacitive element and removing the voltage when the corresponding sense line is addressed, thereby discharging energy from the capacitive element through the resistive connection to the magnetoresistance element. The voltage developed across the capacitive element of each sense circuit is used to produce a binary output signal representative of information stored in an address memory cell.

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Номер записи: 6
06-09-2022 дата публикации

Control apparatus, array-type sensor, sensor usage method, control method, and program

Номер: US0011435251B2
Автор: Hideaki Numata, Hiroyuki Endoh
Принадлежит: NEC CORPORATION

A control apparatus controls an array-type sensor. The control apparatus includes: a first selector/driver that is configured to select and drive one of a plurality of first lines; a second selector/driver that is configured to select and drive at least one of a plurality of second lines; a read/arithmetic circuit that is configured to read outputs of respective unit cells and perform a correction operation on the outputs; and a nonvolatile storage device that is configured to store reference data. The sensor outputs of the respective unit cells with respect to two or more reference inputs are stored as reference data in the nonvolatile storage device in a calibration mode, and a correction operation is performed on the sensor outputs of the respective unit cells using the stored reference data and results of the correction operation are output in a measurement mode.

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Номер записи: 7
16-03-2006 дата публикации

Magnetic memory, and its operating method

Номер: US20060056250A1
Автор: Sadahiko Miura, Tadahiko Sugibayashi, Hideaki Numata, Kiyotaka Tsuji
Принадлежит: NEC CORPORATION

A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.

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Номер записи: 8
17-06-2010 дата публикации

MAGNETIC RANDOM ACCESS MEMORY

Номер: US20100149862A1
Автор: Nobuyuki Ishiwata, Hideaki Numata, Norikazu Ohshima, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU
Принадлежит: NEC CORPORATION

A magnetic random access memory comprises a magnetic recording layer equipped with a magnetization reversal region having a reversible magnetization and through which a write current is made to flow in the in-plane direction, a magnetization fixed layer having a fixed magnetization, a nonmagnetic layer provided between the magnetization reversal region and the magnetization fixed layer, and a heat absorbing structure provided opposing to the magnetic recording layer and having a function of receiving heat generated in the magnetic recording layer and of radiating the heat. Such magnetic random access memory can radiate heat generated in the magnetic recording layer by using the heat absorbing structure and prevent temperature rising caused by the write current flowing in the in-plane direction.

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Номер записи: 9
13-11-2012 дата публикации

Switching element including carbon nanotubes and method for manufacturing the same

Номер: US0008309992B2
Автор: Satoru Toguchi, Hideaki Numata, Hiroyuki Endoh, TOGUCHI SATORU, NUMATA HIDEAKI, ENDOH HIROYUKI
Принадлежит: NEC Corporation, TOGUCHI SATORU, NUMATA HIDEAKI, ENDOH HIROYUKI, NEC CORP, NEC CORPORATION

A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.

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Номер записи: 10
20-02-2001 дата публикации

Magnetic random access memory circuit

Номер: US0006191972B1
Автор: Sadahiko Miura, Hideaki Numata, MIURA SADAHIKO, NUMATA HIDEAKI
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

A magnetic random access memory circuit comprises first and second row decoders receiving a part of a given address, first and second column decoders receiving the other part of a given address, a plurality of pairs of sense lines connected between output terminals of the first row decoder and output terminals of the second row decoder, each pair of sense lines being located adjacent to each other, a plurality of word lines connected between output terminals of the first column decoder and output terminals of the second column decoder, and extending to intersect the sense lines so that intersections of the sense lines and the word lines are located in the form of a matrix. A memory array includes a plurality of cell pairs distributed over the matrix, each cell pair including a memory cell and a reference cell located adjacent to each other. Each of the memory cell and the reference cell includes a magneto-resistive element. The memory cell and the reference cell of each cell pair are located ...

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Номер записи: 11
01-07-2010 дата публикации

SWITCHING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

Номер: US20100163858A1
Автор: Satoru Toguchi, Hideaki Numata, Hiroyuki Endoh, TOGUCHI SATORU, NUMATA HIDEAKI, ENDOH HIROYUKI
Принадлежит:

A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process.

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Номер записи: 12
24-10-2006 дата публикации

Magnetic random access memory

Номер: US0007126201B2
Автор: Hisao Matsutera, Hideaki Numata, MATSUTERA HISAO, NUMATA HIDEAKI
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer ( 11 ) which has a reversible free spontaneous magnetization, a fixed layer ( 6 ) which has fixed spontaneous magnetization, and a spacer layer ( 10 ) formed of non-magnetic interposed between the free layer ( 11 ) and the fixed layer ( 6 ). The fixed layer ( 6 ) is formed such that orange peel effect and magneto-static coupling effect does not substantially influence on the free layer ( 11 ).

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Номер записи: 13
22-04-2010 дата публикации

MAGNETIC RANDOM ACCESS MEMORY

Номер: US20100096715A1
Автор: Tetsuhiro Suzuki, Norikazu Ohshima, Hideaki Numata, SUZUKI TETSUHIRO, OHSHIMA NORIKAZU, NUMATA HIDEAKI
Принадлежит:

A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient in the magnetization switching region 13.

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Номер записи: 14
03-12-2009 дата публикации

MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY

Номер: US20090296454A1
Автор: Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Hideaki Numata, Norikazu Ohshima
Принадлежит:

A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.

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Номер записи: 15
27-05-2014 дата публикации

Magnetic memory cell and magnetic random access memory

Номер: US0008737119B2
Автор: Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Hideaki Numata, Norikazu Ohshima, HONDA TAKESHI, SAKIMURA NOBORU, SUGIBAYASHI TADAHIKO, NUMATA HIDEAKI, OHSHIMA NORIKAZU
Принадлежит: NEC Corporation, HONDA TAKESHI, SAKIMURA NOBORU, SUGIBAYASHI TADAHIKO, NUMATA HIDEAKI, OHSHIMA NORIKAZU, NEC CORP, NEC CORPORATION

A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20 . The magnetic recording layer 10 has a magnetization inversion region 13 , a first magnetization fixed region 11 and a second magnetization fixed region 12 . The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30 . The first magnetization fixed region 11 is connected with a first boundary B 1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B 2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.

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Номер записи: 16
22-11-2012 дата публикации

CARBON NANOTUBE DISPERSION LIQUID AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Номер: US20120295406A1
Автор: Hideaki Numata, Hiroyuki Endoh, NUMATA HIDEAKI, ENDOH HIROYUKI
Принадлежит: NEC CORPORATION

A carbon nanotube dispersion liquid obtained by mixing carbon nanotubes, a first organic solvent that is a nonpolar solvent, and a second organic solvent that has a polarity higher than that of this first organic solvent and is compatible with this first organic solvent.

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Номер записи: 17
07-10-2010 дата публикации

SEMICONDUCTOR ELEMENT

Номер: US20100252802A1
Автор: Hideaki Numata, Kazuki Ihara, NUMATA HIDEAKI, IHARA KAZUKI
Принадлежит: NEC Corp

This invention provides a semiconductor element which uses a plurality of carbon nanotubes as a current path, can reduce contact resistance of its electrode contact part, and has excellent electrical characteristics. This semiconductor element is characterized in that the semiconductor element includes a current path ( 16 ) comprised of a plurality of carbon nanotubes ( 18 ) and not less than two electrodes ( 14, 15 ) connected with the current path, wherein at least one or more of the electrodes is made of a mixture of a metal and a carbon material ( 17 ) having SP 2 hybridized orbital, such as a multi-walled carbon nanotube, a glassy carbon, and graphite particles.

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Номер записи: 18
08-01-2013 дата публикации

Magnetic random access memory

Номер: US0008351249B2
Автор: Nobuyuki Ishiwata, Hideaki Numata, Norikazu Ohshima, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU
Принадлежит: NEC Corporation, NEC CORP, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU, NEC CORPORATION

A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

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Номер записи: 19
03-09-2013 дата публикации

Magnetic random access memory

Номер: US0008526222B2
Автор: Nobuyuki Ishiwata, Hideaki Numata, Norikazu Ohshima, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU
Принадлежит: NEC Corporation, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU, NEC CORP, NEC CORPORATION

A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

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Номер записи: 20
02-07-2013 дата публикации

Magnetic memory cell and magnetic random access memory

Номер: US0008477528B2
Автор: Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Hideaki Numata, Norikazu Ohshima, HONDA TAKESHI, SAKIMURA NOBORU, SUGIBAYASHI TADAHIKO, NUMATA HIDEAKI, OHSHIMA NORIKAZU
Принадлежит: NEC Corporation, HONDA TAKESHI, SAKIMURA NOBORU, SUGIBAYASHI TADAHIKO, NUMATA HIDEAKI, OHSHIMA NORIKAZU, NEC CORP, NEC CORPORATION

A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.

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Номер записи: 21
30-12-2014 дата публикации

Magnetic random access memory

Номер: US0008923042B2
Автор: Nobuyuki Ishiwata, Hideaki Numata, Norikazu Ohshima, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

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Номер записи: 22
13-02-2007 дата публикации

Magnetic memory, and its operating method

Номер: US0007177179B2
Автор: Sadahiko Miura, Tadahiko Sugibayashi, Hideaki Numata, Kiyotaka Tsuji, MIURA SADAHIKO, SUGIBAYASHI TADAHIKO, NUMATA HIDEAKI, TSUJI KIYOTAKA
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

A technology for eliminating the defects in a tunnel insulation film of magnetic tunnel junction and for suppressing generation of a defective bit in an MRAM using magnetic tunnel junction in a memory. The magnetic memory includes a substrate, an interlayer insulation film covering the upper surface side of the substrate, memory cells, and plugs penetrating the interlayer insulation film. The memory cell includes a first magnetic layer formed on the upper surface side of the interlayer insulation film, a tunnel insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel insulation layer. The plug is connected electrically with the first magnetic layer. The tunnel current passing part of the tunnel insulation layer located between the first and second magnetic layers is arranged, at least partially, so as not to overlap the plug in the direction perpendicular to the surface of the substrate.

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Номер записи: 23
03-11-2005 дата публикации

Magnetic random access memory

Номер: US20050242407A1
Автор: Hisao Matsutera, Hideaki Numata
Принадлежит: NEC Corp

A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer ( 11 ) which has a reversible free spontaneous magnetization, a fixed layer ( 6 ) which has fixed spontaneous magnetization, and a spacer layer ( 10 ) formed of non-magnetic interposed between the free layer ( 11 ) and the fixed layer ( 6 ). The fixed layer ( 6 ) is formed such that orange peel effect and magneto-static coupling effect does not substantially influence on the free layer ( 11 ).

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Номер записи: 24
09-03-2004 дата публикации

Method of fabricating magnetic random access memory operating based on tunnel magnetroresistance effect

Номер: US0006703249B2
Автор: Takeshi Okazawa, Hideaki Numata, OKAZAWA TAKESHI, NUMATA HIDEAKI
Принадлежит: NEC Electronics Corporation, NEC ELECTRONICS CORP, NEC ELECTRONICS CORPORATION

A method of manufacturing a magnetic random access memory for excluding stress-induced defects in memory cells. The method is composed of forming a first magnetic film over a substrate, forming a tunnel insulating film on the first magnetic film such that the tunnel insulating film has a curvature, forming a second magnetic film on the tunnel insulating film, and etching the first magnetic film, the tunnel insulating film and the second magnetic film to form a memory cell. The etching is executed such that the curvature is excluded from the memory cell.

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Номер записи: 25
22-01-2002 дата публикации

Magnetic random access memory circuit

Номер: US0006341084B2
Автор: Hideaki Numata, Kouichi Takeda, NUMATA HIDEAKI, TAKEDA KOUICHI
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

In a magnetic random access memory circuit, the potential of all sense lines 121 to 124 are equalized, and the potential of all not-selected word lines 133, 135, 136 are equalized and the selected word line 134 is grounded so that a previously charged capacitor 114 is discharged by a current path passing from the capacitor 114 through a MOS transistor 118 maintaining the potential of the sense line 122 at a constant voltage lower than a break voltage, through the selected sense line 122, through the selected magneto-resistive element 142 and through the selected word line 134. Thus, a voltage applied to the magneto-resistive element is maintained at a level smaller than a voltage breaking the magneto-resistive elements or a voltage remarkably deteriorating the characteristics of the magneto-resistive elements because of a biasing effect when the tunnel magneto-resistive element is used, and on the other hand, a high precise and high speed reading can be realized.

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Номер записи: 26
01-10-2013 дата публикации

Magnetic random access memory

Номер: US0008547733B2
Автор: Nobuyuki Ishiwata, Hideaki Numata, Norikazu Ohshima, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU
Принадлежит: NEC Corporation, ISHIWATA NOBUYUKI, NUMATA HIDEAKI, OHSHIMA NORIKAZU, NEC CORP, NEC CORPORATION

A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

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Номер записи: 27
26-09-2023 дата публикации

Nanocarbon ink and method for manufacturing semiconductor device in which same is used

Номер: US0011767442B2
Автор: Hideaki Numata
Принадлежит: NEC CORPORATION, NEC Corporation

A nanocarbon ink contains nanocarbons, a solvent, and a polyoxyethylene alkyl ether represented by the following expression: C n H 2n (OCH 2 CH 2 ) m OH where, n=12 to 18 and m=20 to 100.

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Номер записи: 28
02-05-2002 дата публикации

Magnetic random access memory having voltage control circuitry for maintaining sense lines at constant low voltages

Номер: US20020051381A1
Автор: Hideaki Numata, Koichi Takeda
Принадлежит: NEC Corporation

A matrix array of memory cells are located on intersections of word lines and sense lines. Each memory cell has a magnetoresistance element and a switching element which establishes a connection between a corresponding sense line and the magnetoresistance element when a corresponding word line is addressed. A number of sense circuits are respectively provided for the sense lines. Each sense circuit includes a capacitive element connected to the corresponding sense line and a switching element for applying a voltage to the capacitive element and causing it to discharge when the corresponding sense line is addressed. The voltage developed across the capacitive element of each sense circuit is used to produce a binary output signal representative of information stored in an address memory cell. A number of voltage control elements are provided for maintaining the sense lines at constant lower voltages regardless of higher voltages produced by the sense circuits.

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Номер записи: 29
07-08-2012 дата публикации

MRAM utilizing free layer having fixed magnetization regions with larger damping coefficient than the switching region

Номер: US0008238135B2
Автор: Tetsuhiro Suzuki, Norikazu Ohshima, Hideaki Numata, SUZUKI TETSUHIRO, OHSHIMA NORIKAZU, NUMATA HIDEAKI
Принадлежит: NEC Corporation, SUZUKI TETSUHIRO, OHSHIMA NORIKAZU, NUMATA HIDEAKI, NEC CORP, NEC CORPORATION

A magnetic recording layer 10 of an MRAM has a first magnetization fixed region 11, a second magnetization fixed region 12 and a magnetization switching region 13. The magnetization switching region 13 has reversible magnetization and overlaps with a pinned layer. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13. The damping coefficient in at least a portion R1, R2 of the magnetization fixed regions 11 and 12 is larger than the damping coefficient in the magnetization switching region 13.

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Номер записи: 30
12-07-2022 дата публикации

Nanocarbon separation device, nanocarbon separation method, and nanocarbon recovery method

Номер: US0011383984B2
Автор: Kazuki Ihara, Mayumi Kosaka, Ryota Yuge, Hideaki Numata, Fumiyuki Nihey
Принадлежит: NEC CORPORATION

A nanocarbon separation device includes a separation tank which is configured to accommodate a dispersion liquid including a nanocarbon, a first electrode that is provided at an upper part in the separation tank, a second electrode that is provided at a lower part in the separation tank, and a partition member that is provided between the first electrode and the second electrode in the separation tank, and the partition member partitions the separation tank into a plurality of regions.

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Номер записи: 31
29-11-2022 дата публикации

Nanocarbon separation method

Номер: US0011511229B2
Автор: Fumiyuki Nihey, Hideaki Numata, Yuki Kuwahara, Takeshi Saito, Fusako Sasaki
Принадлежит: NEC CORPORATION

A nanocarbon separation method includes: a step of preparing a plurality of liquids with different specific gravities in which at least one of the plurality of liquids is a dispersion liquid in which a mixture of nanocarbons with different properties is dispersed; a step of sequentially injecting the plurality of liquids into an electrophoresis tank so that the specific gravities of the liquids decrease from a bottom to a top of the liquids in a direction of gravitational force; and a step of separating the mixture of the nanocarbons by moving a part of the mixture toward an electrode side disposed in an upper part of the electrophoresis tank and moving a remainder of the mixture toward an electrode side disposed in a lower part of the electrophoresis tank by applying a direct current voltage to the electrodes.

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Номер записи: 32
28-08-2012 дата публикации

Semiconductor element

Номер: US0008253124B2
Автор: Hideaki Numata, Kazuki Ihara, NUMATA HIDEAKI, IHARA KAZUKI
Принадлежит: NEC Corporation, NUMATA HIDEAKI, IHARA KAZUKI, NEC CORP, NEC CORPORATION

This invention provides a semiconductor element which uses a plurality of carbon nanotubes as a current path, can reduce contact resistance of its electrode contact part, and has excellent electrical characteristics. This semiconductor element is characterized in that the semiconductor element includes a current path (16) comprised of a plurality of carbon nanotubes (18) and not less than two electrodes (14, 15) connected with the current path, wherein at least one or more of the electrodes is made of a mixture of a metal and a carbon material (17) having SP2 hybridized orbital, such as a multi-walled carbon nanotube, a glassy carbon, and graphite particles.

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Номер записи: 33
08-10-2002 дата публикации

Magnetic random access memory having voltage control circuitry for maintaining sense lines at constant low voltages

Номер: US0006462982B1
Автор: Hideaki Numata, Koichi Takeda, NUMATA HIDEAKI, TAKEDA KOICHI
Принадлежит: NEC Corporation, NEC CORP, NEC CORPORATION

A matrix array of memory cells are located on intersections of word lines and sense lines. Each memory cell has a magnetoresistance element and a switching element which establishes a connection between a corresponding sense line and the magnetoresistance element when a corresponding word line is addressed. A number of sense circuits are respectively provided for the sense lines. Each sense circuit includes a capacitive element connected to the corresponding sense line and a switching element for applying a voltage to the capacitive element and causing it to discharge when the corresponding sense line is addressed. The voltage developed across the capacitive element of each sense circuit is used to produce a binary output signal representative of information stored in an address memory cell. A number of voltage control elements are provided for maintaining the sense lines at constant lower voltages regardless of higher voltages produced by the sense circuits.

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Номер записи: 34
09-09-2010 дата публикации

CARBON NANOTUBE STRUCTURE AND THIN FILM TRANSISTOR

Номер: US20100224862A1
Автор: Hiroyuki Endoh, Satoru Toguchi, Hideaki Numata, ENDOH HIROYUKI, TOGUCHI SATORU, NUMATA HIDEAKI
Принадлежит: NEC Corp

When an electronic element using a carbon nanotube (CNT) is fabricated, particularly when a carbon nanotube thin film is formed on a previously formed electrode, a CNT film is manufactured on the previously formed electrode, and the CNT film on the electrode is used as an electronic element, as it is. In this case, a problem is that unless the carbon nanotubes and the electrode are in sufficient contact with each other, the contact resistance increases, and sufficient element properties are not obtained. When a carbon nanotube thin film is formed on a previously formed electrode, a conductive organic polymer thin film is formed, before or after the carbon nanotube thin film is manufactured, to decrease the contact resistance.

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Номер записи: 35
10-06-2010 дата публикации

MAGNETIC MEMORY CELL, MAGNETIC RANDOM ACCESS MEMORY, AND DATA READ/WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY

Номер: US20100142264A1
Автор: Hideaki Numata, Norikazu Ohshima, Tetsuhiro Suzuki, Tadahiko Sugibayashi, Nobuyuki Ishiwata, Shunsuke Fukami, NUMATA HIDEAKI, OHSHIMA NORIKAZU, SUZUKI TETSUHIRO, SUGIBAYASHI TADAHIKO, ISHIWATA NOBUYUKI, FUKAMI SHUNSUKE
Принадлежит: NEC CORPORATION

The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer. A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20 . The magnetic recording layer 10 includes a magnetization switching region 13 , a first magnetization fixed region 11 and a second magnetization fixed region 12 . The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30 . The first magnetization fixed region 11 is connected to a first boundary B 1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B 2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

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Номер записи: 36
26-12-2013 дата публикации

MAGNETIC RANDOM ACCESS MEMORY

Номер: US20130341744A1
Автор: Ishiwata Nobuyuki, NUMATA Hideaki, Ohshima Norikazu
Принадлежит: NEC Corporation

A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction. 1 a magnetization free region having a reversible magnetization;', 'a first magnetization fixed region coupled with a first boundary of said magnetization free region and having a fixed magnetization; and', 'a second magnetization fixed region coupled with a second boundary of said magnetization free region and having a fixed magnetization;, 'a magnetic recording layer through which a write current flows in an in-plane direction, said magnetic recording layer includinga magnetization fixed layer having a fixed magnetization;a non-magnetic layer provided between said magnetization free region and said magnetization fixed layer;first and second interconnections electrically connected to said first and second magnetization fixed regions, respectively, wherein said write current flows through said first and second interconnections,a third interconnection electrically connected to said magnetization fixed layer, wherein a read current flows through said third interconnection;at least one of said first to third interconnections having a function of radiating heat generated in said magnetic recording layer by including a region in ...

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Номер записи: 37
13-02-2020 дата публикации

Nanocarbon separation method

Номер: US20200047122A1
Автор: Fumiyuki Nihey, Fusako Sasaki, Hideaki Numata, Takeshi Saito, Yuki Kuwahara
Принадлежит: NEC Corp

A nanocarbon separation method includes: a step of preparing a plurality of liquids with different specific gravities in which at least one of the plurality of liquids is a dispersion liquid in which a mixture of nanocarbons with different properties is dispersed; a step of sequentially injecting the plurality of liquids into an electrophoresis tank so that the specific gravities of the liquids decrease from a bottom to a top of the liquids in a direction of gravitational force; and a step of separating the mixture of the nanocarbons by moving a part of the mixture toward an electrode side disposed in an upper part of the electrophoresis tank and moving a remainder of the mixture toward an electrode side disposed in a lower part of the electrophoresis tank by applying a direct current voltage to the electrodes.

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Номер записи: 38
11-03-2021 дата публикации

Control apparatus, array-type sensor, sensor usage method, control method, and program

Номер: US20210072108A1
Автор: Hideaki Numata, Hiroyuki Endoh
Принадлежит: NEC Corp

A control apparatus controls an array-type sensor. The control apparatus includes: a first selector/driver that is configured to select and drive one of a plurality of first lines; a second selector/driver that is configured to select and drive at least one of a plurality of second lines; a read/arithmetic circuit that is configured to read outputs of respective unit cells and perform a correction operation on the outputs; and a nonvolatile storage device that is configured to store reference data. The sensor outputs of the respective unit cells with respect to two or more reference inputs are stored as reference data in the nonvolatile storage device in a calibration mode, and a correction operation is performed on the sensor outputs of the respective unit cells using the stored reference data and results of the correction operation are output in a measurement mode.

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Номер записи: 39
09-07-2020 дата публикации

NANOCARBON INK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH SAME IS USED

Номер: US20200216688A1
Автор: NUMATA Hideaki
Принадлежит: NEC Corporation

A nanocarbon ink contains nanocarbons, a solvent, and a polyoxyethylene alkyl ether represented by the following expression: CH(OCHCH)OH where, n=12 to 18 and m=20 to 100. 1. A nanocarbon ink , comprising: {'br': None, 'sub': n', '2n', '2', '2', 'm, 'CH(OCHCH)OH'}, 'nanocarbons, a solvent, and a polyoxyethylene alkyl ether represented by the following expressionwhere, n=12 to 18 and m=20 to 100.2. The nanocarbon ink according to claim 1 , wherein an amount of the polyoxyethylene alkyl ether is 0.03 wt % or more.3. The nanocarbon ink according to claim 1 , wherein an amount of the polyoxyethylene alkyl ether is 0.50 wt % or less.4. The nanocarbon ink according to claim 1 , wherein an absorbance at a wavelength of 310 nm when an optical path length is 10 mm is 0.2 or more.5. The nanocarbon ink according to claim 1 , wherein the absorbance at the wavelength of 310 nm when the optical path length is 10 mm is 2.2 or less.6. The nanocarbon ink according to claim 1 , wherein the solvent is either water claim 1 , heavy water claim 1 , or a mixture of water and heavy water.7. The nanocarbon ink according to claim 1 , wherein the nanocarbons are single-walled carbon nanotubes.8. The nanocarbon ink according to claim 1 , wherein purity of semiconducting single-walled carbon nanotubes is 95% or more.9. The nanocarbon ink according to claim 1 , wherein a zeta potential of micelles which hold nanocarbons is negatively greater than a zeta potential of an aqueous surfactant solution contained in the ink.10. A method for manufacturing a semiconductor device in which the nanocarbon ink according to is used claim 1 , comprising:adhering the nanocarbon ink to a channel layer forming region between a source electrode and a drain electrode to form a channel layer. The present invention relates to a nanocarbon ink and a method for manufacturing a semiconductor device in which the same is used. Particularly, the present invention relates to a single-walled carbon nanotube ink and a method ...

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Номер записи: 40
16-07-2020 дата публикации

Method for separating single-walled carbon nanotube mixture and single-walled carbon nanotube dispersion liquid

Номер: US20200223695A1
Автор: Hideaki Numata, Kazuki Ihara
Принадлежит: NEC Corp

A method for separating a single-walled carbon nanotube mixture includes: preparing a dispersion liquid containing the single-walled carbon nanotube mixture and a surfactant; and separating the single-walled carbon nanotube mixture contained in the dispersion liquid, wherein in the separating the single-walled carbon nanotube mixture, a dispersion liquid in which a physical property of the dispersion liquid is within a prescribed range is used.

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Номер записи: 41
13-08-2020 дата публикации

Cross-flow filtration device and cross-flow filtration method

Номер: US20200254389A1
Автор: Hideaki Numata
Принадлежит: NEC Corp

A cross-flow filtration device includes: a filter module which includes an inner chamber and an outer chamber separated by a semipermeable membrane; a process liquid tank which is configured to accommodate a process liquid; a pump which is configured to cause the process liquid to circulate to the inner chamber in the filter module and the process liquid tank; a replenisher tank which is configured to accommodate a replenisher liquid to be replenished into the process liquid tank, at least one or more sensors which are configured to measure a pressure of the circulating process liquid; and a replenisher measurement unit which is configured to measure an amount of the replenisher liquid supplied from the replenisher tank to the process liquid tank. The process liquid tank is configured to be continuously replenished with the replenisher liquid.

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Номер записи: 42
03-09-2020 дата публикации

NANOCARBON SEPARATION METHOD AND NANOCARBON SEPARATION APPARATUS

Номер: US20200277194A1
Автор: NIHEY Fumiyuki, NUMATA Hideaki
Принадлежит: NEC Corporation

A nanocarbon separation method includes: preparing a nanocarbon dispersion liquid in which nanocarbons and a non-ionic surfactant are dispersed in a solvent; injecting the nanocarbon dispersion liquid into a separation tank; applying a direct current voltage to a first electrode provided at an upper part of the interior of the separation tank and a second electrode provided at a lower part of the interior of the separation tank and generating a pH gradient in the nanocarbon dispersion liquid inside the separation tank, and separating metallic nanocarbons and semiconductor nanocarbons included in the nanocarbon dispersion liquid. 1. A nanocarbon separation method , comprising:preparing a nanocarbon dispersion liquid in which a nanocarbon and a non-ionic surfactant are dispersed in a solvent;injecting the nanocarbon dispersion liquid into a separation tank;applying a direct current voltage to a first electrode provided at an upper part of the interior of the separation tank and a second electrode provided at a lower part of the interior of the separation tank and generating a pH gradient in the nanocarbon dispersion liquid inside the separation tank; andseparating metallic nanocarbons and semiconductor nanocarbons included in the nanocarbon dispersion liquid.2. The nanocarbon separation method according to claim 1 , wherein the non-ionic surfactant is a polyoxyethylene alkyl ether represented by the following expression:{'br': None, 'sub': n', '2n', '2', '2', 'm, 'CH(OCHCH)OH\u2003\u2003(1)'}where, n=12 to 18 and m=20 to 100.3. The nanocarbon separation method according to claim 1 , wherein the amount of the non-ionic surfactant in the dispersion liquid is 0.1 wt % or more and 5 wt % or less.4. The nanocarbon separation method according to claim 1 , wherein claim 1 , when the direct current voltage is applied claim 1 , an electric field between the first electrode and the second electrode is 0.5 V/cm or higher and 15 V/cm or lower.5. The nanocarbon separation method ...

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Номер записи: 43
10-09-2020 дата публикации

Nanocarbon separation device, nanocarbon separation method, and nanocarbon recovery method

Номер: US20200283296A1
Автор: Fumiyuki Nihey, Hideaki Numata, Kazuki Ihara, Mayumi Kosaka, Ryota Yuge
Принадлежит: NEC Corp

A nanocarbon separation device includes a separation tank which is configured to accommodate a dispersion liquid including a nanocarbon, a first electrode that is provided at an upper part in the separation tank, a second electrode that is provided at a lower part in the separation tank, and a partition member that is provided between the first electrode and the second electrode in the separation tank, and the partition member partitions the separation tank into a plurality of regions.

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Номер записи: 44
12-09-2008 дата публикации

Magnetic memory cell and magnetic random access memory

Номер: WO2008108109A1
Автор: Hideaki Numata, Kenichi Shimura, Shunsuke Fukami
Принадлежит: NEC Corporation

A magnetic memory cell is provided with a fixing layer (4), a recording layer (2), a nonmagnetic layer (3), an electrode section (21) and an electrode section (22). The fixing layer (4) includes a ferromagnetic body whose magnetization direction is fixed. The recording layer (2) includes a ferromagnetic body for storing information by relative relationship between the magnetization direction of the fixing layer (4) and the magnetization direction of the recording layer itself. The nonmagnetic layer (3) is arranged between the recording layer (2) and the fixing layer (4). The electrode section (21) is electrically connected to one end portion of the recording layer (2). The electrode section (22) is electrically connected to the other end portion of the recording layer (2). When a write current is supplied from one of the first electrode section (21) and the electrode section (22) to the other through the recording layer (2), end portion magnetization including a component not parallel to the magnetization direction of the recording layer (2) is generated at the one end portion and the other end portion, and magnetization of the recording layer (2) directs to the direction of the end portion magnetization.

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Номер записи: 45
15-01-2004 дата публикации

Magnetic random access memory

Номер: WO2004006335A1
Автор: Hideaki Numata, Hisao Matsutera
Принадлежит: NEC Corporation

There is provided a technique to more effectively reduce the MRAM memory cell offset magnetic field. An MRAM includes a free layer (11) having reversible free spontaneous magnetization, a fixed layer (6) having fixed spontaneous magnetization, and a spacer layer (10) formed by a non-magnetic body and arranged between the free layer (11) and the fixed layer (6). The fixed layer (6) is formed in such a manner that the orange-peel effect and magnetostatic coupling effect are not applied to the free layer (11).

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Номер записи: 46
11-04-2023 дата публикации

Nonlinear resistance element, switching element, and method for manufacturing nonlinear resistance element

Номер: JP2023051435A
Автор: Hideaki Numata, Koichiro Okamoto, Munehiro Tada, Naoki Tomono, Noriyuki Iguchi, 宗弘 多田, 憲幸 井口, 浩一郎 岡本, 直樹 伴野, 秀昭 沼田
Принадлежит: Nanobridge Semiconductor Inc

【課題】電気特性に優れた非線形抵抗素子、スイッチング素子、及び非線形抵抗素子の製造方法を提供する。【解決手段】第１電極と、アモルファス・カルコゲナイド薄膜からなる第１非線形抵抗層と、中間層と、アモルファス・カルコゲナイド薄膜からなる第２非線形抵抗層と、第２電極とを備え、第１電極、第１非線形抵抗層、中間層、第２非線形抵抗層、及び第２電極がこの順に積層された、非線形抵抗素子、スイッチング素子、及び非線形抵抗素子の製造方法である。【選択図】図１

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Номер записи: 47
31-07-2008 дата публикации

磁気抵抗素子及び磁気記憶装置

Номер: WO2008090696A1
Автор: Hideaki Numata, Yuukou Katou
Принадлежит: NEC Corporation

　磁気抵抗素子は、第１磁性体４と、第２磁性体５と、第１磁性体４と第２磁性体５との間に挟まれた非磁性体６と、第２磁性体５における非磁性体６とは反対の側に接して設けられた反強磁性体７とを具備する。第１磁性体４は、データによって磁化方向が変化する第１領域８と、磁化方向が第１領域８と異なり、データに依らず磁化方向が概ね変わらず、第１領域８の一方の端部に結合した第２領域９とを有する。第２磁性体５及び反強磁性体７とは、いずれも第１領域８及び第２領域９に設けられている。第２磁性体５の磁化方向は、第１磁性体４の第１領域８の磁化方向とは異なる。

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Номер записи: 48
08-10-1999 дата публикации

集積回路の製造方法

Номер: JPH11274120A
Автор: Hideaki Numata, 秀昭 沼田
Принадлежит: NEC Corp

(57)【要約】 【課題】 容易な研磨平坦化法における終点検出法、終 点確認法を確立し、層間絶縁膜の膜厚が高度に制御され た集積回路の製造方法を提供する。 【解決手段】 基板１１上に第１の配線１２を形成する 工程と、第１の配線１２の段差を残すように層間絶縁膜 １３を成膜する工程と、層間絶縁膜１３上に後で成膜す る第２の配線層と同一のエッチング条件で加工し得る材 料の研磨停止層１４を成膜する工程と、第１の配線１２ 上以外の部分に研磨停止層１４を残すように層間絶縁膜 １３と研磨停止層１４の双方を研磨することにより層間 絶縁膜１３を平坦化する工程と、層間絶縁膜１３の所望 の位置にコンタクトホール１５を形成する工程と、第２ の配線１６を成膜する工程と、第２の配線１６を所望の 形状に加工すると同時に研磨停止層１４の不要部分を除 去する工程とを有する。

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Номер записи: 49
24-04-2024 дата публикации

不揮発性スイッチング素子の製造方法

Номер: JP2024057514A
Автор: Hideaki Numata, Koichiro Okamoto, Munehiro Tada, Naoki Tomono, Noriyuki Iguchi, 宗弘 多田, 憲幸 井口, 浩一郎 岡本, 直樹 伴野, 秀昭 沼田
Принадлежит: Nanobridge Semiconductor Inc

【課題】下部電極上にスパッタリング成膜するバッファ層材料の成膜偏りを解消し、保持特性に優れた不揮発性スイッチング素子の製造方法を提供する。【解決手段】基板１１０に第１層間絶縁膜１０１を形成し、第１層間絶縁膜１０１に下部電極１０３を埋設し、第１層間絶縁膜１０１上に第２層間絶縁膜１０２を形成し、第１層間絶縁膜１０１及び第２層間絶縁膜１０２に、下部電極１０３の一部が露出する開口部１０９を形成し、開口部１０９にバッファ層１０５をスパッタ成膜し、バッファ層１０５に固体電解質層１０６、第１上部電極１０７及び第２上部電極１０８を形成する工程を有し、バッファ層１０５をスパッタ成膜する工程において、アルゴンの圧力でのアルゴン平均自由行程と、カソードと開口部１０９との間の距離との比を２から３．５の間に設定してスパッタ成膜する、不揮発性スイッチング素子１００の製造方法が提供される。【選択図】図１

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Номер записи: 50
24-12-2009 дата публикации

電気回路用配線、その製造装置、その製造方法及び分散剤の回収方法

Номер: JP2009302291A
Автор: Hideaki Numata, Tatsu Azumaguchi, 東口　　達, 秀昭 沼田
Принадлежит: NEC Corp

【課題】金属微細粒子を含む金属インクを用いた印刷法により、低温かつ簡便な工程にて製造される、基板素材や形状の自由度の高い電気回路用配線、その製造装置、その製造方法及び分散剤の回収方法を提供する。 【解決手段】電気回路用配線は、基板上に、金属微細粒子と、金属微細粒子に配位しうる置換基を有する分散剤と、を含む金属インクにより描画される金属インクパターンを溶媒に接触させることにより形成される。溶媒には、分散剤と同様の配位相互作用をもたらす置換基を有する分子量が１００以下の有機溶媒を使用する。 【選択図】図１

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Номер записи: 51
08-02-2024 дата публикации

抵抗変化素子の書き換え方法

Номер: JP2024018557A
Автор: Hideaki Numata, Koichiro Okamoto, Munehiro Tada, Naoki Tomono, Noriyuki Iguchi, 宗弘 多田, 憲幸 井口, 浩一郎 岡本, 直樹 伴野, 秀昭 沼田
Принадлежит: Nanobridge Semiconductor Inc

【課題】２つの不良モードを同時に解決する抵抗変化素子の書き換え方法を提供する。【解決手段】第１電極と、第２電極と、電極間に位置するイオン伝導層と、からなり、イオン伝導層内に金属架橋を形成して低抵抗になる場合をオン状態とし、金属架橋を形成していない又は金属架橋が途中で切断することで高抵抗になる場合をオフ状態とする抵抗変化素子において、オン状態からオフ状態に遷移させる際に、第１のオフ電圧を印加する工程と、第１電極と第２電極との間の抵抗値を読出して判定を行う工程と、判定に応じて、判定値を満たさないオフ状態の抵抗変化素子に第１のオン電圧以下の第２のオン電圧の印加を行う工程と、第２のオフ電圧を印加する工程と、を有する、抵抗変化素子の書き換え方法が提供される。【選択図】図８

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Номер записи: 52
14-11-2000 дата публикации

磁気ランダムアクセスメモリ回路

Номер: JP2000315382A
Автор: Hideaki Numata, Sadahiko Miura, 秀昭 沼田, 貞彦 三浦
Принадлежит: NEC Corp

(57)【要約】 【課題】 ウエハー上での場所に依存する記憶セルの特 性のばらつきに特性が依存しないＭＲＡＭ回路を提供す る。 【解決手段】 アドレスの一部をデコードする行デコー ダと、アドレスの残りの部分をデコードする列デコーダ と、行デコーダのデコード端子に接続される複数のセン ス線と、列デコーダのデコード端子に接続される複数の ワード線と、複数の記憶セルと、複数の参照セルと、を 備え、記憶セルと参照セルは磁気抵抗素子を備え、複数 のセンス線と複数のワード線はマトリックス状に交差 し、複数のセンス線と複数のワード線の交点のうち、一 部のセンス線に係る交点において複数の記憶セルが交点 のセンス線とワード線に接続され、他のセンス線に係る 交点において複数の参照セルが交点のセンス線とワード 線に接続される。

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Номер записи: 53
22-10-2024 дата публикации

Switching element and method for manufacturing same

Номер: US12127485B2
Автор: Hideaki Numata, Koichiro Okamoto, Munehiro Tada, Naoki Banno
Принадлежит: Nanobridge Semiconductor Inc

A switching element that has reduced switching voltage and leakage current and that demonstrates high reliability and low power consumption is achieved as a result of comprising: a first insulation layer in which first wiring mainly consisting of copper is embedded in a first wiring groove that opens upward; a second insulation layer which is formed on an upper surface of the first insulation layer and the first wiring and has an opening that reaches the first insulation layer and the first wiring; a first electrode which is the portion of the first wiring that is exposed from the opening; an oxygen supply layer which is formed on an upper surface of the second insulation layer, generates oxygen plasma during etching to form the opening in the second insulation layer, and remains at least in the vicinity of the opening of the upper surface of the second insulation layer; an ion conducting layer which is formed on the upper surface of the first insulation layer and the first electrode that are exposed from the opening, an inner surface of the opening of the second insulation layer, and an upper surface of the oxygen supply layer; and a second electrode that is formed on an upper surface of the ion conducting layer.

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Номер записи: 54
23-07-2024 дата публикации

Cross-flow filtration device and cross-flow filtration method

Номер: US12042766B2
Автор: Hideaki Numata
Принадлежит: NEC Corp

A cross-flow filtration device includes: a filter module which includes an inner chamber and an outer chamber separated by a semipermeable membrane; a process liquid tank which is configured to accommodate a process liquid; a pump which is configured to cause the process liquid to circulate to the inner chamber in the filter module and the process liquid tank; a replenisher tank which is configured to accommodate a replenisher liquid to be replenished into the process liquid tank, at least one or more sensors which are configured to measure a pressure of the circulating process liquid; and a replenisher measurement unit which is configured to measure an amount of the replenisher liquid supplied from the replenisher tank to the process liquid tank. The process liquid tank is configured to be continuously replenished with the replenisher liquid.

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Номер записи: 55