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Применить Всего найдено 7. Отображено 7.
21-11-2013 дата публикации

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20130306993A1
Автор: Chen Biau-Dar, Chen Chun Chang, Chi Liang Sheng, Fang Pei Shan, Ho Cheng Hsiang
Принадлежит:

A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions. 1. A method of fabricating an optoelectronic device , comprising:providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface;forming a light emitting stack on the second major surface of the substrate;forming an supporting layer covering the light emitting stack;forming a plurality of first modified regions in the substrate by employing an first energy into the substrate;forming an oxide layer on the first major surface of the substrate; andcleaving the substrate along the plurality of the first modified regions.2. The method of fabricating the optoelectronic device of claim 1 , wherein the energy is from a laser and the wavelength of the laser is 350-1500 nm claim 1 , and/or the energy of the laser is 0.05-1 W claim 1 , and/or the speed of the laser is 20-1000 mm/sec.3. The method of fabricating the optoelectronic device of claim 1 , further comprising a step to remove the supporting layer.4. The method of fabricating the optoelectronic device of claim 1 , wherein the light emitting stack layer comprising a first conductive-type semiconductor layer formed on the second major surface of the substrate claim 1 , an active layer form on the first conductive-type semiconductor layer and a second conductive-type semiconductor layer formed on the active layer.5. The method of fabricating the ...

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Номер записи: 1
07-05-2015 дата публикации

LIGHT-EMITTING ELEMENT

Номер: US20150123152A1
Автор: CHANG Chun-Wei, Ho Cheng-Hsiang, LIN Chi-Nan, OU CHEN, SHEN Chien-Fu, Tseng Ching-Tung, YANG Yu-Chen
Принадлежит:

A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking region on the first flat region; and a cap region on the upper surface, wherein the current blocking region is spatially separate from the cap region; and a first electrode covering the current blocking region. 1. A light-emitting element , comprising:a light-emitting stack, comprising an upper surface, wherein the upper surface comprises a first flat region; a current blocking region on the first flat region; and', 'a cap region on the upper surface, wherein the current blocking region and the cap region are separated spatially; and, 'a protective layer, comprising'}a first electrode covering the current blocking region.2. The light-emitting element of claim 1 , wherein the light-emitting stack comprises:a first semiconductor layer;a second semiconductor layer formed between the first semiconductor layer and the current blocking region;an active layer formed between the first semiconductor layer and the second semiconductor layer; anda second electrode formed on the first semiconductor layer and on a lateral side of the second semiconductor layer, and separated from the first electrode.3. The light-emitting element of claim 1 , wherein the cap region and the current blocking region comprise substantially the same thickness and the same material.4. The light-emitting element of claim 1 , wherein the protective layer further comprises an opening between the cap region and the current blocking region claim 1 , wherein the first electrode fills in the opening.5. The light-emitting element of claim 1 , wherein the upper surface comprises a rough surface.6. The light-emitting element of claim 1 , further comprising a second electrode claim 1 , wherein the protective layer comprises an opening and the second electrode fills in the opening.7. The light-emitting element of claim 1 ...

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Номер записи: 2
02-07-2015 дата публикации

OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20150187986A1
Автор: Chen Biau-Dar, Chen Chun Chang, Chi Liang Sheng, Fang Pei Shan, Ho Cheng Hsiang
Принадлежит:

A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate. 1. A method of fabricating an optoelectronic device , comprising:providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface;forming a light emitting stack on the second major surface of the substrate;forming a supporting layer covering the light emitting stack;forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; andcleaving the substrate.2. The optoelectronic device of claim 1 , further comprising forming an oxide layer on the first major surface of the substrate.3. The optoelectronic device of claim 1 , wherein the step of forming the oxide layer is before the step of forming the plurality of first modified regions.4. The method of fabricating the optoelectronic device of claim 1 , wherein the first energy is from a laser and the wavelength of the laser is 350-1500 nm claim 1 , and/or the first energy of the laser is 0.05-1 W claim 1 , and/or the speed of the laser is 20-1000 mm/sec.5. The method of fabricating the optoelectronic device of claim 1 , further comprising a step to remove the supporting layer after forming the plurality of first modified regions.6. The method of fabricating the optoelectronic device of claim 1 , further comprising a first extension section extended from an upper edge of the first modified region and formed between the first modified region and the second ...

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Номер записи: 3
28-11-2019 дата публикации

OPTICAL DETECTION DEVICE AND DETECTION METHOD THEREOF

Номер: US20190362121A1
Автор: Chen Yi-Wei, Ho Cheng-Hsiang, WANG CHIH-HUNG
Принадлежит: AU OPTRONICS CORPORATION

An optical detection device and a detection method thereof are provided. The optical detection device includes a sensing element array, an optical film layer, a driver and a controller. The sensing element array is used to detect a touching action. The optical film layer covers the sensing element array for receiving the touching action. The controller generates a trigger signal according to the touching action. Wherein, the driver lights the optical film layer according to the trigger event in an initial time interval, and the driver stops the optical film layer being lighted during the interval time interval after the initial time interval and the driver lights the optical film layer again during a detection time interval after the interval time interval, and the optical film layer generates a detecting image according to the touching action. The controller detects the image identification during the detection time interval. 1. An optical detection device , comprising:a sensing element array, used to detect a touching action;an optical film layer, covering the sensing element array for receiving the touching action;a driver, coupled to the optical film layer; anda controller, coupled to the driver and the sensing element array and generating a trigger signal according to the touching action,wherein, the driver lights the optical film layer according to a trigger event in an initial time interval, and the driver stops the optical film layer being lighted during an interval time interval after the initial time interval and the driver lights the optical film layer again during a detection time interval after the interval time interval, and the optical film layer generates a detecting image according to the touching action,wherein, the controller identifies the detecting image during the detection time interval.2. The optical detection device according to claim 1 , wherein claim 1 , the sensing element array comprises a plurality of scanning lines claim 1 , and the ...

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Номер записи: 4
10-12-2013 дата публикации

Threshold compensation method on touch device

Номер: US8605047B2
Автор: Cheng-Hsiang HO, Yu-Min Hsu
Принадлежит: AU OPTRONICS CORP

The disclosure provides a threshold compensation method applied to a touch device including a plurality of touch points. The threshold compensation method includes steps of: selecting at least one of the plurality of touch points as a selected object; obtaining a sensing data of each the touch point of the selected object in each of multiple initializing frequency periods; obtaining a sensing data difference value between the sensing data of each the touch point of the selected object in each adjacent two of the initializing frequency periods; obtaining a maximum sensing data difference value in the multiple sensing data difference values of the selected object in the multiple initializing frequency periods; and setting a default threshold of the selected object according to the maximum sensing data difference value.

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Номер записи: 5
06-12-2017 дата публикации

Image processing method and image processing system

Номер: EP3252667A1
Автор: Cheng-Hsiang HO, Po-Ching Chen
Принадлежит: AU OPTRONICS CORP

An image processing method includes obtaining a sensed image, wherein the sensed image comprises a pattern; dividing the sensed image into a plurality of blocks; calculating a direction field according to the pattern in each of the blocks; calculating a similarity degree between the direction field of a first block and the direction fields of adjacent blocks of the first block; and classifying the first block into a first part according to the similarity degree of the first block.

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Номер записи: 6
27-09-2007 дата публикации

Complex Memory Chip

Номер: US20070223274A1
Автор: Hsiang-Cheng Ho, Wen-Chieh Lee
Принадлежит: MemoCom Corp

A complex memory chip is provided. The complex memory chip comprises a first pin, a second pin, a voltage generator, a flash memory, and a static random access memory (SRAM). The first pin is capable of transmitting a first voltage. The second pin is capable of transmitting a second voltage which is lower than the first voltage, so as to define a working voltage in association with the first voltage. The voltage generator generates a third voltage according to the first voltage, wherein the third voltage is greater than the first voltage. The flash memory and the SRAM operate under the working voltage. The flash memory erases data according to the third voltage.

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Номер записи: 7